CN102376862A

CN102376862A - Inverted LED

Info

Publication number: CN102376862A
Application number: CN2011102905531A
Authority: CN
Inventors: 顾燕萍
Original assignee: Suzhou Chengyuan Photoelectric Technology Co Ltd
Current assignee: Suzhou Chengyuan Photoelectric Technology Co Ltd
Priority date: 2011-09-29
Filing date: 2011-09-29
Publication date: 2012-03-14

Abstract

The invention relates to an inverted LED which comprises an LED bare chip, wherein the LED bare chip is formed by a substrate, an N-type epitaxial layer and a P-type epitaxial layer. The inverted LED also comprises a silicon substrate, wherein the N-type epitaxial layer and the P-type epitaxial layer are respectively inverted and welded on two separated electrode metal layers through two metal weld legs, the outer surface of each electrode metal layer is a reflective surface, the middle of the upper surface of the silicon substrate is downwards concaved, the electrode metal layers cover the bottom surface and the circumference of the concave part of the silicon substrate, an isolating layer for isolating the electrode metal layers from the silicon substrate is arranged between the electrode metal layers and the silicon substrate, the bottom of the concave part of the silicon substrate is a horizontal surface, the circumference of the concave part is a spherical surface, and the highest of the LED bare chip substrate is lower than that of the concave part of the silicon substrate. The invention ensures that the utilization rate of emergent light of an LED is high and the light-emitting intensity of the center part in the front of the LED is extremely high.

Description

Flip-over type LED

Technical field

The present invention relates to the LED technical field, specifically, relate to a kind of flip-over type LED, flip-over type LED luminous efficiency of the present invention is high, and the luminous intensity of front center part is high.

Background technology

The formal dress chip technology is traditional microelectronic packaging technology, and its technology maturation, range of application are the most extensive; Most in the market LED are formal dress formula LED; LED bare chip formal dress is on a support that has a reflector, and its P type epitaxial loayer, N type epitaxial loayer are welded on the lead-in wire of anode and negative electrode through metal wire respectively, but the light of this forward LED mirrored sides makes it penetrate from the front; But the positive light that sends can be covered by the metal bonding wire; And poor radiation, simultaneously, forward LED is difficult realizes that the multicore sheet is integrated.

Therefore, occurred comparatively advanced flip chip technology (fct) in recent years, this is a kind of desirable die bonding technology; Flip-over type LED of the prior art is planar structure basically, and there is this such shortcoming in the flip-over type LED of this structure, i.e. the PN junction of the LED of upside-down mounting all can be luminous on front, side, bottom surface; But because the light that send side and bottom surface is scattered away; Thereby be not fully utilized, cause the luminous efficiency of LED lower, like the front go out light intensity and reduce.

Based on the defective of above-mentioned prior art, novel flip chip technology (fct) has appearred, be about to the structure that planar structure changes the band groove into, the INTERFACE DESIGN of groove is a trapezium structure, like this, the light of the PN junction of LED on side, bottom surface all can effectively be reflected.But, get luminous efficiency though such structure has improved LED greatly, positive luminous intensity also is improved because trapezoidal groove structure, make that ambient light is reflected after, scatter out from the front, therefore, all can not satisfy the demand in a lot of occasions.

Therefore,, adapt to the needs of reality, be necessary to design the flip-over type LED that a kind of novel luminous efficiency luminous intensity high, the front center part has a distinct increment compared to prior art in order to overcome the deficiency of prior art.

Summary of the invention

The objective of the invention is to overcome the deficiency of prior art, adapt to the needs of reality, a kind of flip-over type LED is provided, flip-over type LED luminous efficiency of the present invention is high, and the luminous intensity of front center part is high.

In order to realize the object of the invention, the technical scheme that the present invention adopts is:

A kind of flip-over type LED; Comprise the LED bare chip of forming by substrate, N type epitaxial loayer, P type epitaxial loayer; Also comprise silicon substrate, said N type epitaxial loayer, P type epitaxial loayer are connected on the electrode metal layer of two separation through two metal leg flip chip bondings respectively, and the outer surface of said electrode metal layer is a reflective surface; The upper surface middle part of said silicon substrate is to lower recess; Said electrode metal layer is covered in the bottom surface of said silicon substrate depressed part and all around, is provided with the separator that electrode metal layer and silicon substrate are isolated between said electrode metal layer and the silicon substrate, and the bottom of said silicon substrate depressed part is a horizontal plane; Around the depressed part is sphere, and the peak of said LED bare chip substrate is lower than the peak of said silicon substrate depressed part.

Said electrode metal layer outside is coated with protective layer.

Be provided with anti-short circuit isolation layer between the electrode metal layer of said two separation.

Be provided with potting resin in the depressed part of said silicon substrate.

Beneficial effect of the present invention is:

Depressed part around adopt spherical structure, the light that makes the PN junction of LED on front, side, bottom surface, send is all focused on positive center, the light that sends on side, the bottom surface has obtained effective utilization, and front center luminous intensity partly is high;

2. technology is simple, simple in structure, realizes that easily the multicore sheet is integrated.

Description of drawings

Fig. 1 is a structural representation of the present invention.

Embodiment

Below in conjunction with accompanying drawing and embodiment the present invention is further specified:

Embodiment: referring to Fig. 1.

A kind of flip-over type LED; Comprise the LED bare chip of forming by substrate 11, N type epitaxial loayer 12, P type epitaxial loayer 13; Also comprise silicon substrate 2, said N type epitaxial loayer 12, P type epitaxial loayer 13 are connected on the

electrode metal layer

41,42 of two separation through two metal legs, 31,32 flip chip bondings respectively, and the outer surface of said

electrode metal layer

41,42 is a reflective surface; The upper surface middle part of said silicon substrate 2 is to lower recess; Said

electrode metal layer

41,42 is covered in the bottom surface of said silicon substrate 2 depressed parts and all around, is provided with the

separator

51,52 that

electrode metal layer

41,42 and silicon substrate 2 are isolated between said

electrode metal layer

41,42 and the silicon substrate 2, and the bottom of said silicon substrate 2 depressed parts is a horizontal plane; Around the depressed part is sphere, and the peak of said LED bare chip substrate 11 is lower than the peak of said silicon substrate 2 depressed parts.Separator 51,52 is used to isolate two electrode metal layers and silicon substrate, prevents electric leakage or short circuit between two electrode metal layers, can play electrostatic protective function simultaneously.

Electrode

metal layer

41,42 uses as electrode, and the reflective surface as side and bottom surface uses simultaneously.

Said

electrode metal layer

41,42 outsides are coated with protective layer 7, are in order to prevent electric leakage or short circuit between two electrode metal layers equally.

The electrode metal layer 41 of said two separation, be provided with anti-short circuit isolation layer 6 between 42, purpose and act on the samely is to prevent electrode metal layer 41, occurs electric leakage or short circuit between 42.

Be provided with potting resin in the depressed part of said silicon substrate 2.

The light that the invention enables the PN junction of LED on front, side, bottom surface, to send is all focused on positive center, and the light that sends on side, the bottom surface has obtained effective utilization, and the luminous intensity of front center part is high; Technology is simple, simple in structure, realizes that easily the multicore sheet is integrated.

Claims

1. flip-over type LED; Comprise the LED bare chip of forming by substrate (11), N type epitaxial loayer (12), P type epitaxial loayer (13); Also comprise silicon substrate (2); Said N type epitaxial loayer (12), P type epitaxial loayer (13) are connected on the electrode metal layer (41,42) of two separation through two metal legs (31,32) flip chip bonding respectively; The outer surface of said electrode metal layer (41,42) is a reflective surface, and the upper surface middle part of said silicon substrate (2) is to lower recess, and said electrode metal layer (41,42) is covered in the bottom surface of said silicon substrate (2) depressed part and all around; Be provided with the separator (51,52) that electrode metal layer (41,42) and silicon substrate (2) are isolated between said electrode metal layer (41,42) and the silicon substrate (2); It is characterized in that: the bottom of said silicon substrate (2) depressed part is a horizontal plane, is sphere around the depressed part, and the peak of said LED bare chip substrate (11) is lower than the peak of said silicon substrate (2) depressed part.

2. flip-over type LED according to claim 1 is characterized in that: said electrode metal layer (41,42) outside is coated with protective layer (7).

3. flip-over type LED according to claim 1 is characterized in that: be provided with anti-short circuit isolation layer (6) between the electrode metal layer of said two separation (41,42).

4. flip-over type LED according to claim 1 is characterized in that: be provided with potting resin in the depressed part of said silicon substrate (2).