CN102376345B - Magnetic multilayer film for magnetic random access memory - Google Patents
Magnetic multilayer film for magnetic random access memory Download PDFInfo
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- CN102376345B CN102376345B CN201010259764.4A CN201010259764A CN102376345B CN 102376345 B CN102376345 B CN 102376345B CN 201010259764 A CN201010259764 A CN 201010259764A CN 102376345 B CN102376345 B CN 102376345B
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
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Abstract
The invention relates to a magnetic multilayer film and an MRAM memory cell thereof. The magnetic multilayer film comprises an MTJ multilayer film for generating TMR effect and a GMR multilayer film for generating GMR effect and under the MTJ multilayer film; the MTJ multilayer film and the GMR multilayer film share a free layer; at least a part adjacent to a side of the GMR multilayer film is exposed, and current traversing the exposed part is used for overturning a free layer magnetic moment. The magnetic multilayer film of the present invention can be employed to reduce power consumption during device usage effectively and avoid barrier damage and memory cell failure in the memory cell caused by repeat and infinite write-in of high density current, thereby realizing long service life.
Description
Technical field
The invention belongs to MAGNETIC RANDOM ACCESS MEMORY field, specifically relate to a kind of magnetoresistance effect, and the MAGNETIC RANDOM ACCESS MEMORY that designed read-write separates based on this magnetoresistance effect.
Background technology
As everyone knows, giant magnetoresistance effect (the Giant Magneto-resistance observing in nanoscale magnetic multilayers and MTJ (MTJ), and Tunneling Magnetoresistance (Tunneling Magneto-resistance GMR), TMR) fields such as computing machine magnetic reading head and magneto-dependent sensor have been widely used in, and wherein the extremely important application of the another one of MTJ can be used as the best storage unit of MAGNETIC RANDOM ACCESS MEMORY (Magnetic Random Access Memory, MRAM) exactly.
At present, the data writing mode of the MRAM that people propose is mainly divided into two classes.The first kind is field drives type, storage unit ferromagnetic layer (free layer overturns in the magnetic field producing by electric current, also claim bit-level, bit layer) magnetic moment, thereby obtain the variation of the high and low resistance state of magnetic memory cell, realize writing of memory cell data (bit) " 1 ", " 0 ".Equations of The Second Kind is current drive-type, the spin transfer torque producing by the spin polarized current magnetic moment of storage unit ferromagnetic layer that overturns, and then realize writing of memory cell data (bit) " 1 ", " 0 ".With respect to the former, method large structure and the processing technology of having simplified device to the utmost of current drive-type storage data, but its subject matter still existing is at present to write fashionable power consumption high (being that magneto-resistor is larger), fashionable when frequently writing chronically, easily damage the barrier layer of MTJ in mram memory cell, thereby affect the serviceable life of storage unit and device.
Summary of the invention
Therefore, one object of the present invention is to overcome the defect of above-mentioned prior art, and a kind of magnetoresistance effect that can effectively reduce device power consumption is provided.
Another object of the present invention is to provide a kind of MAGNETIC RANDOM ACCESS MEMORY based on above-mentioned magnetoresistance effect.
The object of the invention is to be achieved through the following technical solutions:
According to an aspect of the present invention, a kind of magnetoresistance effect for MRAM is provided, this magnetoresistance effect comprises for generation of the MTJ multilayer film of TMR effect and is positioned at the GMR multilayer film for generation of GMR effect below this MTJ multilayer film, wherein MTJ multilayer film and GMR multilayer film share free layer, wherein:
At least a portion adjacent to MTJ multilayer film one side of described GMR multilayer film is exposed, through the electric current of this expose portion described free layer magnetic moment that is used for overturning.
In above-mentioned magnetoresistance effect, described GMR multilayer film exposes multiple parts, and the plurality of part is spaced to one another.
In above-mentioned magnetoresistance effect, described GMR multilayer film exposes a part.
In above-mentioned magnetoresistance effect, described free layer is the ferromagnetic layer of being made up of ferrimagnet, and this ferrimagnet has level or vertical magnetocrystalline anisotropy.
In above-mentioned magnetoresistance effect, described GMR multilayer film comprises hard iron magnetosphere, non-magnetic metal layer and shared ferromagnetic layer, and described MTJ multilayer film comprises shared ferromagnetic layer, insulation course and hard iron magnetosphere.
In above-mentioned magnetoresistance effect, described GMR multilayer film or MTJ multilayer film or the hard iron magnetosphere in these two have pinning structure.
According to another aspect of the present invention, provide a kind of mram memory cell that comprises above-mentioned magnetoresistance effect.
According to a further aspect of the invention, provide a kind of according to the wiring method of above-mentioned mram memory cell, wherein, write current is realized writing of data through the GMR multilayer film exposing.
In above-mentioned wiring method, described write current is greater than the required critical current of upset free layer magnetic moment.
According to a further aspect of the invention, provide a kind of according to the reading method of above-mentioned mram memory cell, wherein, read current, through the intact part of GMR multilayer film in described magnetoresistance effect and MTJ multilayer film, is realized reading of data.
Compared to the prior art, in mram memory cell of the present invention, owing to adopting the very little all-metal GMR effect of resistance to tie to write, therefore the energy consumption of device is low, and power is little; In addition, the structure that adopts read-write to separate, contributes to protect the magnetoresistance effect of large resistance to be difficult in operation damaged.
Brief description of the drawings
Referring to accompanying drawing, embodiments of the present invention is further illustrated, wherein:
Fig. 1 is the physical principle schematic diagram of spin transfer torque effect in the present invention;
Fig. 2 is the structural drawing of magnetoresistance effect of the present invention under original state;
Fig. 3 A is a kind of configuration of magnetoresistance effect of the present invention;
Fig. 3 B is the another kind of configuration of magnetoresistance effect of the present invention;
Fig. 4 A and 4B are magnetoresistance effect based on be made up ferromagnetic layer of the intra-face anisotropy material schematic diagram in the time writing low " 0 ", high " 1 " resistance state;
Fig. 4 C and 4D are magnetoresistance effect based on be made up ferromagnetic layer of the perpendicular magnetic anisotropy material schematic diagram in the time writing low " 0 ", high " 1 " resistance state;
Fig. 5 A is the simplified structure diagram of the magnetoresistance effect of the exemplary mram memory cell of the present invention;
Fig. 5 B, 5C are respectively the GMR multilayer film sectional views that dissect vertical with complete magnetoresistance effect along the mram memory cell of Fig. 5 A;
Fig. 5 D is the simplified structure diagram of the mram memory cell of Fig. 5 A;
Fig. 6 A is the simplified structure diagram of the magnetoresistance effect of another exemplary mram memory cell of the present invention;
Fig. 6 B is the sectional view vertically dissecing along having complete magnetoresistance effect part in the mram memory cell of Fig. 6 A;
Fig. 6 C is along the vertical sectional view dissecing of GMR multilayer film part in the mram memory cell of Fig. 6 A with 6D;
Fig. 6 E is the simplified structure diagram of the mram memory cell of Fig. 6 A.
Embodiment
Generally speaking, the present invention is based on producing spin transfer torque effect during through free layer (be magnetic moment can rotate freely layer) when electric current, this effect can make the magnetic moment of free layer overturn, thereby the physical mechanism of realizing the read-write operation of storage unit is conceived.The physical principle of spin transfer torque effect is shown in Figure 1, its principle is: in the time that electric current is flowed through the free layer of (through) magnetoresistance effect, because the conduction electron in spin polarized current can be transferred to spin angular momentum the magnetic moment of the free layer of spin polarized current process, thereby cause precession or the upset of its magnetic moment, particularly, when current density is greater than electric current (area of Ic=jc × magnetoresistance effect storage unit, the j of the required critical current density Ic of upset magnetic moment
c=2 × 10
6～1 × 10
8a/cm2) time, the spin transfer torque producing is enough large, and the magnetic moment of free layer can be reversed.
In magnetoresistance effect of the present invention, comprise for generation of the GMR multi-layer film structure of giant magnetoresistance (GMR) effect with for generation of MTJ (MTJ) multi-layer film structure of tunneling magnetic resistance (TMR) effect.In the present invention, make GMR multi-layer film structure expose a part, like this, in the time having electric current through GMR multi-layer film structure, can the magnetic moment of free layer in this GMR multi-layer film structure (referring to the rotatable magnetosphere of magnetic moment) be overturn by producing spin transfer torque effect, the magnetic moment that can drive opposite side to have free layer in complete multi-layer film structure overturns simultaneously, reaches thus and writes object.Different from traditional multi-layer film structure, electric current needn't pass through whole magnetoresistance effect, and only need pass through the GMR multilayer film part of magnetoresistance effect, thereby has avoided the larger mtj structure of resistance, and the power consumption of device is reduced greatly.
In exemplary magnetic multilayer film of the present invention, comprise GMR multi-layer film structure and MTJ multi-layer film structure, as shown in Figure 2, MTJ multilayer film comprises the pinned ferromagnetic layer PL in top, insulation course I and free layer FL, GMR multilayer film comprises free layer FL, non-magnetic metal layer M and the pinned ferromagnetic layer PL in bottom, the free layer FL in the middle of these two kinds of multi-layer film structures all share.In one case, can remove a part of above-mentioned magnetoresistance effect, remove more than FL layer a part of PL and I layer, a part for this FL layer is come out, obtain configuration A as shown in Figure 3A; Now, allow write current I pass the FL layer of this expose portion, make this FL layer magnetic moment upset according to spin transfer torque effect, this magnetic moment upset drives the magnetic moment upset of unexposed portion FL simultaneously, has realized write operation.Or, in another case, remove multiple parts of magnetoresistance effect, such as two parts, make the GMR multi-layer film structure that exposes spaced apart by these remainders, configuration B as shown in Figure 3 B, wherein in two positions of FL layer by PL and the two-layer removal of I, thereby the GMR multi-layer film structure of these two positions is come out, remain complete between the magnetoresistance effect between these two.In this case, the reset current passing into can have two, I ' as shown in the figure and I ", or more.The advantage of this structure can with many reset currents is apparent, and it has not only reduced the current density of every reset current, and can magnetic moment upset is more prone to by controlling multiple electric currents, has improved reversal rate, is a kind of optimal way.
Should be appreciated that, free layer in above-mentioned magnetoresistance effect is made (therefore " free layer " is also referred to as " ferromagnetic layer ") by ferrimagnet conventionally, this ferrimagnet can have level (or be called " face in ") or vertical magnetocrystalline anisotropy, and while therefore use, pinned ferromagnetic layer should be selected the material with free layer with magnetocrystalline anisotropy of the same race.Fig. 4 A and 4B are the magnetoresistance effect be made up of intra-face anisotropy material based on the ferromagnetic layer schematic diagram in the time writing low " 0 ", high " 1 " resistance state, and Fig. 4 C and 4D are the magnetoresistance effect be made up of perpendicular magnetic anisotropy material based on the ferromagnetic layer schematic diagram in the time writing low " 0 ", high " 1 " resistance state.In Fig. 4 A, before writing, ferromagnetic layer magnetic moment direction (dotted arrow direction) is antiparallel with the magnetic moment (solid arrow direction) that bundle ferromagnetic layer is pushed up in bottom; But when passing into after write current e-, produce said spin transfer torque effect above, thereby free layer magnetic moment (is for example overturn, as scheme the upset along clockwise direction as shown in A), the magnetic moment direction of the two is become, and (just) is parallel, realize write (be to be low resistance state while defining in the same way, i.e. signal " 0 ", is " 1 " oppositely time) of " 0 ".Similarly, in Fig. 4 B, before passing into electric current, ferromagnetic layer magnetic moment direction is parallel with the magnetic moment that bundle ferromagnetic layer is pushed up in bottom; But when passing into after electric current e-, ferromagnetic layer magnetic moment overturns, and makes the two become antiparallel, thereby realize writing of " 1 ".Different from the magnetic moment direction of anisotropic material in dotted arrow presentation surface in Fig. 4 A and 4B, dotted arrow in Fig. 4 C and Fig. 4 D represents the direction of magnetic moment in the material of perpendicular magnetic anisotropy, its write operation is identical with the situation of anisotropic material in face in implementation, so repeat no more herein.
Should be appreciated that, what all adopt due to the GMR in above-mentioned magnetoresistance effect and MTJ multi-layer film structure is pinning structure, also should comprise top bundle layer, on the pinned magnetosphere in top, also should there is top pinning layer, under the pinned magnetosphere in bottom, also should there is top, bottom to prick layer, but in order clearly to illustrate core layer of the present invention, they are omitted.In addition, also be to be understood that for those skilled in the art, this pinning structure is not necessary, can produce other GMR multi-layer film structures of GMR effect, and other MTJ multi-layer film structures that can produce TMR effect also can be realized the object of the invention, for example GMR multi-layer film structure can comprise ferromagnetic layer, metal level and hard iron magnetosphere, and MTJ multi-layer film structure can comprise magnetosphere, insulation course and ferromagnetic layer etc.
That magnetoresistance effect of the present invention is applied to the example in the storage unit of magnetic RAM (MRAM) below.
Example 1: the mram memory cell of the magnetoresistance effect based on configuration A
Fig. 5 A is the simplified structure diagram of the magnetoresistance effect of the exemplary mram memory cell of the present invention, its show the read-write electric current magnetoresistance effect of flowing through and on a part.As can be seen from the figure, the configuration A that magnetoresistance effect is mentioned in adopting above, therefore only has a write current and a read current.Wherein, write current flow through write bit line BL1 (2f), via (3d), transition metal layer (2e) and GMR multilayer film part, sense bit line BL2 (2g), via (3d) and complete magnetoresistance effect part and read current is flowed through.This magnetoresistance effect comprises and comprises top pinning layer (not shown), the pinned magnetosphere PL in top, insulation course I, free layer FL, non-magnetic metal layer M, the pinned magnetosphere PL in bottom and bottom pinning layer (not shown) from top to bottom.
Fig. 5 B, 5C are respectively the GMR multilayer film sectional views that dissect vertical with complete magnetoresistance effect along the mram memory cell of Fig. 5 A.From these two figure, can find out, whole mram memory cell comprises a layer 1a, 1b, 1c, 1d, 1e, wherein metal wiring layer has two-layer, be write bit line BL1 (2f) and sense bit line BL2 (2g) place layer 1d, and ground wire GND (2b) and transition metal layer TM (2c) place layer 1b.Two bit lines BL1 (2f), BL2 (2g) are arranged in the top of magnetoresistance effect ML (5), bury medium each other and separate, and the two is mutually vertical with word line (2a) by insulation.
Magnetoresistance effect ML (5) be arranged in write bit line BL1 (2f), sense bit line BL2 (2g) under, wherein GMR multilayer film part is connected by transition metal layer (2e), metal guide through hole (3d) with write bit line BL1 (2f), and complete magnetoresistance effect part is connected with sense bit line BL1 (2g) by metal contact hole (3d) with sense bit line BL2 (2g).Magnetoresistance effect ML (5) bottom is connected with transistorized drain electrode (0b) by transition metal layer (2d), contact hole (3c), transition metal layer TM (2c), contact hole (3b), and ground wire GND (2b) is connected with transistorized source electrode (0a) by contact hole (3a).Word line (2a) is the grid (0c) of described transistor (0), and the non-functional area in these layers is buried medium as SiO by insulation
2deng burying.For the ease of understanding, the structural representation after this mram memory cell is simplified can be referring to Fig. 5 D.
In the addressing read operation of MRAM, first providing a suitable level by selecteed word line WL (2a) makes transistor T R (0) work in conducting state, then correspondingly derive a read current by selecteed sense bit line BL2 (2g), this read current is less than critical current I
c(I
c=j
cthe whole area of × magnetoresistance effect, j
c=1 × 10
2～1 × 10
4a/cm
2), via contact hole (3d), the intact part (being GMR multilayer film+MTJ multilayer film part) of magnetoresistance effect ML (5), transition metal layer TM (2d), contact hole (3c), transition metal layer TM (2c), contact hole (3b), the drain electrode (0b) of transistor T R (0), the source electrode (0a) of transistor T R (0), contact hole (3a) and arrive ground wire GND (2b), thereby obtain the current magnetized state of bit-level (being free layer) of magnetoresistance effect ML (5), obtain the data of storing in mram memory cell.
In the addressing write operation of MRAM, first provide a suitable level by selecteed word line WL (2a) and make transistor T R (0) work in conducting state, then derive one by selecteed write bit line BL2 (2f) and be greater than a certain critical current I
celectric current (I
c=j
cthe area of × magnetoresistance effect storage unit, j
c=2 × 10
6～1 × 10
8a/m
2), via contact hole (3d), transition metal layer TM (2e), arrive the GMR multilayer film part (producing GMR giant magnetoresistance effect part) of magnetoresistance effect ML (5), in the time that this electric current passes GMR multilayer film, can make the magnetic moment of the free layer in GMR multilayer film part overturn by the spin transfer torque effect producing, electric current is then by transition metal layer (2d) like this, contact hole (3c), transition metal layer TM (2c), contact hole (3b), the drain electrode (0b) of transistor T R (0), the source electrode (0a) of transistor T R (0), contact hole (3a) and arrive ground wire GND (2b).Be applied to the direction of current on write bit line BL1 (2f) by change, just can realize the Parallel and antiparallel of free layer magnetic moment in the GMR multilayer film part of ML (5), and then drive the upset of the magnetic moment of the free layer of complete magnetoresistance effect part (being GMR multilayer film+MTJ multilayer film part), realize the variation of its high low resistance state, so just completed writing mram memory cell data.
In this example, write bit line BL1 (2f) is connected with the GMR multilayer film part of described magnetoresistance effect ML (5) by metal contact hole (3d), transition metal layer 2e, but this only as one schematically for example, other can make write current pass GMR multilayer film and then all can use at this for example following mram memory cell described in example 2 based on the overturn multi-layer film structure of free layer magnetic moment of spin transfer torque effect.
Example 2: the mram memory cell of the magnetoresistance effect based on configuration B
Fig. 6 A is the simplified structure diagram of the magnetoresistance effect of another exemplary mram memory cell of the present invention, wherein show the read-write electric current magnetoresistance effect of flowing through and on a part.As can be seen from the figure, the magnetoresistance effect in this storage unit adopts the configuration B above mentioning, and therefore correspondingly has two write currents and a read current.Wherein, two write currents flow through respectively write bit line BL1 (2f) and BL3 (2h), then by the GMR multilayer film part of via (3d), transition metal layer (2e) and magnetoresistance effect, and read current flow through sense bit line BL2 (2g), via (3d) and complete magnetoresistance effect part.Each layer of this magnetoresistance effect is identical with example 1, repeats no more herein.
Fig. 6 B is the sectional view vertically dissecing along having complete magnetoresistance effect part in the mram memory cell of Fig. 6 A.Fig. 6 C is along the vertical sectional view dissecing of GMR multilayer film with 6D.Similar with mram memory cell in example 1, whole mram memory cell comprises a layer 1a, 1b, 1c, 1d, 1e, wherein metal wiring layer have two-layer, 1d and 1b.Different, in 1d layer, be provided with two write bit lines, i.e. write bit line BL1 (2f) and BL3 (2h), and a sense bit line BL2 (2g).Similarly, this three bit lines is arranged in the top of magnetoresistance effect ML (5), bury medium each other and separate, and three is mutually vertical with word line (2a) by insulation.For the ease of understanding, the structural representation after this mram memory cell is simplified can be referring to Fig. 6 E.
In the addressing read operation of MRAM, first providing a suitable level by selecteed word line WL (2a) makes transistor T R (0) work in conducting state, then correspondingly derive a read current by selecteed sense bit line BL2 (2g), this read current is less than critical current I
c(I
c=j
cthe area of × magnetoresistance effect storage unit, j
c=1 × 10
2～1 × 10
4a/cm
2), arrive ground wire GND (2b) via the source electrode (0a) of the drain electrode (0b) of the intact part (being GMR multilayer film+MTJ multilayer film part) of contact hole (3d), magnetoresistance effect ML (5), transition metal layer (2d), contact hole (3c), transition metal layer TM (2c), contact hole (3b), transistor T R (0), transistor T R (0), contact hole (3a), thereby the current magnetized state that obtains the free layer of magnetoresistance effect ML (5), obtains the data of storing in mram memory cell.
In the addressing write operation of MRAM, first provide a suitable level by selecteed word line WL (2a) and make transistor T R (0) work in conducting state, then derive one by selecteed write bit line BL1 (2f), BL3 (2h) simultaneously and be greater than a certain critical current I
celectric current (I
c=j
cthe area of × magnetoresistance effect storage unit, j
c=2 × 10
6～1 × 10
8a/cm
2), via contact hole (3d), transition metal layer (2e), arrive the GMR multilayer film part of magnetoresistance effect ML (5), electric current can make the magnetic moment of GMR multilayer film part ferromagnetic layer overturn by spin transfer torque effect, and electric current then arrives ground wire GND (2b) by transition metal layer (2d), contact hole (3c), transition metal layer TM (2c), contact hole (3b), the drain electrode (0b) of transistor T R (0), the source electrode (0a) of transistor T R (0), contact hole (3a) like this.Be applied to the direction of current on write bit line BL1 (2f), BL3 (2h) by change, just can realize in GMR multilayer film part the Parallel and antiparallel of magnetic moment in free layer, enter the upset of the magnetic moment of the free layer of the complete magnetoresistance effect part of your drive, realize the variation of its high low resistance state, so just completed writing mram memory cell data.
In the present invention, the xsect of magnetoresistance effect is preferably rectangle or ellipse.The storage unit that one end is write, the width of rectangle is between 20～200nm, and the ratio of width and length is 1: 4～1: 5; Oval-shaped minor axis can be between 20～200nm, and the ratio of minor axis and major axis can be 1: 4～1: 5.And the storage unit that two ends are write, the width of rectangle is between 20～200nm, and the ratio of width and length is 1: 5～1: 6; Oval-shaped minor axis can be between 20～200nm, and the ratio of minor axis and major axis can be 1: 5～1: 6.Above-mentioned condition is the shape anisotropy in order to keep better knot to have, and making its easy axle is long axis direction.
In the present invention, be as well known to those skilled in the art for the material of each layer of GMR and MTJ multi-layer film structure, include but not limited to following example:
1) antiferromagnetic pinning layer: for example Ir
22mn
78, Fe
50mn
50, Pt
50mn
50, Cr
50mn
50, Cr
50pt
50, NiO or CoO etc.;
2) insulation course I is made up of insulating material, for example AlO
x, MgO, Al
1-xga
xas, GaAs, In
1-xga
xas, Al
1-xin
xas, GaN, CdS, CaMnO
3, NaCl, TiO
2, HfO
2, ZrO, AlN, SrTiO
3or such as pyrroles, plug phenol, Alq
3the organic material of (8-hydroxyquinoline aluminum), mono-layer graphite, indefiniteness charcoal etc.;
3) ferromagnetic layer FL and PL comprise:
The material of intra-face anisotropy: transition metal, transistion metal compound and containing transition metal compound, for example: Fe, Co, Ni or their alloy Co
1-x-yfe
xb
y(wherein 0 < x < 1,0 < y≤0.2); And magnetic semiconductor, for example: Ga
1-xmn
xas (wherein 0 < x < 0.2), Zn
1-xmn
xo (wherein 0 < x < 0.2), Ga
1-xmn
xn (wherein 0 < x < 0.2), Ga
1-xmn
xp (wherein 0 < x < 0.2), Ti
1-xco
xo (wherein 0 < x < 0.2); (La
1-xa
x) MnO
3(A represents divalent alkaline-earth metal Elements C a, Sr, Ba, wherein 0.2 < x < 0.4), Fe
3o
4deng;
Perpendicular magnetic anisotropy material: for example Fe-Pt alloy, Co-Ni alloy, Co-Pt alloy, Co-Pd alloy, Gd-Fe-Co alloy, Tb-Fe-Co alloy etc.;
Semi-metallic: for example Co
2feAl, Co
2mnSi, Co
2mnGe, Co
2mnGa, Co
2cr
0.6fe
0.4al, Co
2feSi, Co
2feSiB, Ni
2mnSb, Pt
2mnSb etc.
4) non-magnetic metal layer M is made up of nonmagnetic material, such as Cu, Cr, Zn, Ti, Mn, V, Sc, Ta, Ag, Ru or Au etc.;
5), for the ferromagnetic layer without pinning structure, hard iron magnetosphere is wherein made up of rare earth metal or its compound conventionally, for example Nd
2fe
14b, SmCo
5, SmCo
17, Sm
2(Fe, Co)
17n
3, NdFeTN
x(T=Ti, V, Mo) etc.
Because having used GMR multilayer film part, the present invention writes, its all-metal junction resistance is little, be conducive to meet MAGNETIC RANDOM ACCESS MEMORY low energy consumption and low power requirement, and can effectively avoid storage unit to write fashionable the cause damage of potential barrier and the inefficacy of storage unit high-density current is repeatedly unlimited, reach long-life object.And when data reading, only utilize little electric current to carry out reading of data by MTJ and can ensure that data storage cell is not damaged by tunnelling current.
Should be appreciated that, the various variations of magnetoresistance effect are suitable for the magnetoresistance effect in mram memory cell equally.Although the present invention is made to specific descriptions with reference to the above embodiments, but for the person of ordinary skill of the art, should be appreciated that and can modify or improve based on content disclosed by the invention not departing within spirit of the present invention and scope, these amendments and improving all within spirit of the present invention and scope.
Claims (10)
1. the magnetoresistance effect for MRAM, this magnetoresistance effect comprises for generation of the MTJ multilayer film of TMR effect and is positioned at the GMR multilayer film for generation of GMR effect below this MTJ multilayer film, wherein MTJ multilayer film and GMR multilayer film share free layer, it is characterized in that:
At least a portion adjacent to MTJ multilayer film one side of described GMR multilayer film is exposed, through the electric current of this expose portion described free layer magnetic moment that is used for overturning.
2. magnetoresistance effect according to claim 1, is characterized in that, described GMR multilayer film exposes multiple parts, and the plurality of part is spaced to one another.
3. magnetoresistance effect according to claim 1, is characterized in that, described GMR multilayer film exposes a part.
4. magnetoresistance effect according to claim 1, is characterized in that, described free layer is the ferromagnetic layer of being made up of ferrimagnet, and this ferrimagnet has level or vertical magnetocrystalline anisotropy.
5. magnetoresistance effect according to claim 4, is characterized in that, described GMR multilayer film comprises hard iron magnetosphere, non-magnetic metal layer and shared ferromagnetic layer, and described MTJ multilayer film comprises shared ferromagnetic layer, insulation course and hard iron magnetosphere.
6. magnetoresistance effect according to claim 5, is characterized in that, the hard iron magnetosphere in described GMR multilayer film and/or MTJ multilayer film has pinning structure.
7. a mram memory cell, is characterized in that, comprises the magnetoresistance effect described in any one in claim 1 to 6.
8. a wiring method for mram memory cell according to claim 7, is characterized in that, write current is realized writing of data through the GMR multilayer film exposing.
9. method according to claim 8, is characterized in that, described write current is greater than the required critical current of upset free layer magnetic moment.
10. a reading method for mram memory cell according to claim 7, is characterized in that, read current, through the intact part of GMR multilayer film in described magnetoresistance effect and MTJ multilayer film, is realized reading of data.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010259764.4A CN102376345B (en) | 2010-08-20 | 2010-08-20 | Magnetic multilayer film for magnetic random access memory |
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| TWI259558B (en) * | 2004-11-11 | 2006-08-01 | Nat Changhua University Of Edu | A method for real-time monitoring of the fabrication of magnetic memory units |
| CN101079469A (en) * | 2006-05-26 | 2007-11-28 | 中国科学院物理研究所 | MgO dual-potential magnetic tunnel structure with quanta effect and its purpose |
| CN101221849A (en) * | 2007-01-09 | 2008-07-16 | 中国科学院物理研究所 | Magnetic multilayer film with geometrical shape and preparation method and application thereof |
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| TWI259558B (en) * | 2004-11-11 | 2006-08-01 | Nat Changhua University Of Edu | A method for real-time monitoring of the fabrication of magnetic memory units |
| CN101079469A (en) * | 2006-05-26 | 2007-11-28 | 中国科学院物理研究所 | MgO dual-potential magnetic tunnel structure with quanta effect and its purpose |
| CN101221849A (en) * | 2007-01-09 | 2008-07-16 | 中国科学院物理研究所 | Magnetic multilayer film with geometrical shape and preparation method and application thereof |
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