CN102373471B - Process method for preparing tantalum nitride coating on surface of commemorative coin die - Google Patents
Process method for preparing tantalum nitride coating on surface of commemorative coin die Download PDFInfo
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- CN102373471B CN102373471B CN201010261685.7A CN201010261685A CN102373471B CN 102373471 B CN102373471 B CN 102373471B CN 201010261685 A CN201010261685 A CN 201010261685A CN 102373471 B CN102373471 B CN 102373471B
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Abstract
The invention relates to a process method for preparing a tantalum nitride coating on the surface of a commemorative coin die and belongs to a technology of reinforcing the surface of the commemorative coin die and prolonging the service life of the commemorative coin die. The process method comprises the following process steps of: 1, carrying out nitrogen plasma-based ion implantation surface treatment on the die; 2, heating the die to a temperature of 200 to 300 DEG C; 3, depositing a layer of tantalum film on the surface of the die by magnetron sputtering; 4, carrying out nitrogen plasma-based ion implantation treatment on the tantalum film to form a tantalum nitride layer; and 5, repeatedly carrying out the steps 3 and 4 until the tantalum nitride coating with a preset thickness is obtained. The process method has the advantages that no pollution is discharged in the production process; the surface glossiness and the size accuracy of the die are not changed; and low temperature deposition can be carried out. Moreover, the service life of the die is prolonged and the production efficiency of the die is improved.
Description
Technical field
The present invention relates to a kind of processing method of the surface of commemorative coin mould being carried out to intensive treatment, relate in particular to a kind of processing method of preparing tantalum nitride coating on surface of commemorative coin die, belong to surface of commemorative coin die strengthening life-prolonging technique.
Background technology
Gold and silver coin is a kind of specialty goods, and the value preserving that it has artistry and gold and silver concurrently has very high reserve value.Because gold and silver coin itself is a kind of artwork, with respect to common circulation coin, the requirement of commemorative coin Surface Quality is very high.Flash line is the modal a kind of surface imperfection of gold and silver coin, some that it is characterized in that occurring at commemorative coin edge are along elongated bright line radially, it is generally acknowledged, the generation of flash line is mainly that then commemorative coin surface is transferred in the scuffing of die surface because some hard contamination particles on base cake surface in moulding process produce and scratch die surface with metal flow.The one secondary new commemorative coin mould that does not pass through surface Hardening Treatment is after a small amount of impression, commemorative coin surface just there will be flash line, and along with the increase of impression quantity, the density of flash line increases fast, after acquiring a certain degree, flash line density just must change new die.Changing frequently impressing mould has not only increased production cost greatly, also reduces production efficiency simultaneously.In order to improve the work-ing life of gold-silver coin die, it is necessary selection that die surface is carried out to intensive treatment.Because gold and silver coin is to its surface quality, as brightness, reflectance etc., there is harsh requirement, therefore its selection to die surface modification technology has more restriction, at present the most frequently used surface of commemorative coin die modification technology is durionise coating, and actual production imprint result shows, durionise coating improves compared with having the work-ing life of original mould significantly.But the amplitude that durionise technology improves die life on the one hand does not also reach desired level; electroplating technology is because it belongs to the production technology that environmental pollution is larger on the other hand; along with the gradually attention of country to environment protection; electroplating technology will progressively be eliminated; therefore develop a kind of non-environmental-pollution, the surface of commemorative coin die strengthening new technology that can increase substantially die life is a trend of coinage technical development.
Summary of the invention
The present invention is directed to above-mentioned problems of the prior art, utilize ion injection deposition technology, develop a kind of processing method that is suitable for the preparing tantalum nitride coating on surface of commemorative coin die of surface of commemorative coin die strengthening.Solved in prior art commemorative coin die life short, the problem that production efficiency is low, and non-environmental-pollution.
Processing method of the present invention comprises the steps:
1. mould is carried out to the ion implantation surface treatment of nitrogen plasma base, adopting gas is purity 99.999% high pure nitrogen, uses radio-frequency drive nitrogen plasma, and injecting voltage is 60kV, and implantation dosage is 3 * 10
17-5 * 10
17ion/cm
2;
2. above-mentioned surface-treated mould is heated, make die temperature rise to 200-300 ℃;
3. to the mould after above-mentioned intensification, adopting magnetron sputtering is 30-100nm tantalum film in die surface deposition a layer thickness;
4. above-mentioned tantalum film is carried out to plasma based ion and inject processing, form tantalum nitride layer, injecting voltage is 45-60kV, and implantation dosage is 0.5 * 10
17-1 * 10
17ion/cm
2;
5. repeatedly carry out above-mentioned steps 3. with step 4., until obtain thickness, be the tantalum nitride coating of 1-2 μ m.
Advantageous effect of the present invention is as follows:
The present invention is by adopting ion injection deposition technology, and compared with prior art, it has production process non-pollution discharge, does not change mold surface finish, dimensional precision and advantage that can low temperature depositing.And extended the work-ing life of mould, improved the production efficiency of mould.
Embodiment
The present invention in conjunction with specific embodiments, is described in detail as follows:
Embodiment 1
1. mould is carried out to the ion implantation surface treatment of nitrogen plasma base.Adopting gas is purity 99.999% high pure nitrogen, uses radio-frequency drive nitrogen plasma, and injecting voltage is 60kV, and implantation dosage is 3 * 10
17ion/cm
22. above-mentioned surface-treated mould is heated, make die temperature rise to 200 ℃; 3. to the mould after above-mentioned intensification, adopting magnetron sputtering is 30nm tantalum film in die surface deposition a layer thickness; 4. above-mentioned tantalum film is carried out to plasma based ion and inject processing, form tantalum nitride layer, injecting voltage is 45kV, and implantation dosage is 0.5 * 10
17ion/cm
2; 3. and 4. 5. repeatedly carrying out step totally 40 times, is the tantalum nitride coating of 1.2 μ m until obtain thickness.Actual silver coin imprint result shows, when an impression silver coin piece number reaches after 600 pieces, on silver coin, flash line quantity obviously reduces compared with silver coin after 600 pieces of hard chrome plating die marks.Silver coin surface quality reaches production requirement.
Embodiment 2
1. mould is carried out to the ion implantation surface treatment of nitrogen plasma base, adopting gas is purity 99.999% high pure nitrogen, uses radio-frequency drive nitrogen plasma, and injecting voltage is 60kV, and implantation dosage is 5 * 10
17ion/cm
22. above-mentioned surface-treated mould is heated, make die temperature rise to 300 ℃; 3. to the mould after above-mentioned intensification, adopting magnetron sputtering is 100nm tantalum film in die surface deposition a layer thickness; 4. above-mentioned tantalum film is carried out to plasma based ion and inject processing, form tantalum nitride layer, injecting voltage is 60kV, and implantation dosage is 1 * 10
17ion/cm
2; 3. and 4. 5. repeatedly carrying out step totally 20 times, is the tantalum nitride coating of 2 μ m until obtain thickness.Actual copper coin imprint result shows, through plating hard Cr mould when being impressed into 2000 pieces of left and right, surperficial flash line is very serious, cannot proceed, and during die marks to 3000 after ion implantation processing piece, the defects such as product surface flash line are still slighter, can continue impression.Copper coin surface quality reaches production requirement.
Embodiment 3
1. mould is carried out to the ion implantation surface treatment of nitrogen plasma base, adopting gas is purity 99.999% high pure nitrogen, uses radio-frequency drive nitrogen plasma, and injecting voltage is 60kV, and implantation dosage is 4 * 10
17ion/cm
22. above-mentioned surface-treated mould is heated, make die temperature rise to 250 ℃; 3. to the mould after above-mentioned intensification, adopting magnetron sputtering is 50nm tantalum film in die surface deposition a layer thickness; 4. above-mentioned tantalum film is carried out to plasma based ion and inject processing, form tantalum nitride layer, injecting voltage is 60kV, and implantation dosage is 1 * 10
17ion/cm
2; 3. and 4. 5. repeatedly carrying out step totally 30 times, is the tantalum nitride coating of 1.5 μ m until obtain thickness.Actual silver coin imprint result shows, when an impression silver coin piece number reaches after 600 pieces, on silver coin, flash line quantity obviously reduces compared with silver coin after 600 pieces of hard chrome plating die marks.Silver coin surface quality reaches production requirement.
Embodiment 4
1. mould is carried out to the ion implantation surface treatment of nitrogen plasma base, adopting gas is purity 99.999% high pure nitrogen, uses radio-frequency drive nitrogen plasma, and injecting voltage is 60kV, and implantation dosage is 3 * 10
17ion/cm
22. above-mentioned surface-treated mould is heated, make die temperature rise to 300 ℃; 3. to the mould after above-mentioned intensification, adopting magnetron sputtering is 40nm tantalum film in die surface deposition a layer thickness; 4. above-mentioned tantalum film is carried out to plasma based ion and inject processing, form tantalum nitride layer.Injecting voltage is 60kV, and implantation dosage is 0.5 * 10
17ion/cm
2; 3. and 4. 5. repeatedly carrying out step totally 25 times, is the tantalum nitride coating of 1 μ m until obtain thickness.
Claims (5)
1. the processing method of preparing tantalum nitride coating on surface of commemorative coin die, is characterized in that comprising the steps:
1. mould is carried out to the ion implantation surface treatment of nitrogen plasma base, adopting gas is purity 99.999% high pure nitrogen, uses radio-frequency drive nitrogen plasma, and injecting voltage is 60kV, and implantation dosage is 3 * 10
17-5 * 10
17ion/cm
2;
2. above-mentioned surface-treated mould is heated, make die temperature rise to 200-300 ℃;
3. to the mould after above-mentioned intensification, adopting magnetron sputtering is 30-100nm tantalum film in die surface deposition a layer thickness;
4. above-mentioned tantalum film is carried out to the ion implantation processing of nitrogen plasma base, form tantalum nitride layer, injecting voltage is 45-60kV, and implantation dosage is 0.5 * 10
17-1 * 10
17ion/cm
2;
5. repeatedly carry out above-mentioned steps 3. with step 4., until obtain thickness, be the tantalum nitride coating of 1-2 μ m.
2. the processing method of preparing tantalum nitride coating on surface of commemorative coin die according to claim 1, is characterized in that described step 1., and implantation dosage is 3 * 10
17ion/cm
2; Described step 2. in, make die temperature rise to 200 ℃; Described step 3. in, in die surface deposition a layer thickness, be 30nm tantalum film; Described step 4. in, injecting voltage is 45kV, implantation dosage is 0.5 * 10
17ion/cm
2; Described step 5. in, repeatedly carry out step 3. and 4. totally 40 times, until obtain thickness, be the tantalum nitride coating of 1.2 μ m.
3. the processing method of preparing tantalum nitride coating on surface of commemorative coin die according to claim 1, is characterized in that described step 1., and implantation dosage is 5 * 10
17ion/cm
2; Described step 2. in, make die temperature rise to 300 ℃; Described step 3. in, in die surface deposition a layer thickness, be 100nm tantalum film; Described step 4. in, injecting voltage is 60kV, implantation dosage is 1 * 10
17ion/cm
2; Described step 5. in, repeatedly carry out step 3. and 4. totally 20 times, until obtain thickness, be the tantalum nitride coating of 2 μ m.
4. the processing method of preparing tantalum nitride coating on surface of commemorative coin die according to claim 1, is characterized in that described step 1., and implantation dosage is 4 * 10
17ion/cm
2; Described step 2. in, make die temperature rise to 250 ℃; Described step 3. in, in die surface deposition a layer thickness, be 50nm tantalum film; Described step 5. in, repeatedly carry out step 3. and 4. totally 30 times, until obtain thickness, be the tantalum nitride coating of 1.5 μ m.
5. the processing method of preparing tantalum nitride coating on surface of commemorative coin die according to claim 1, is characterized in that described step 1., and implantation dosage is 3 * 10
17ion/cm
2; Described step 3. in, in die surface deposition a layer thickness, be 40nm tantalum film; Described step 4. in, injecting voltage is 60kV, implantation dosage is 0.5 * 10
17ion/cm
2; Described step 5. in, repeatedly carry out step 3. and 4. totally 25 times, until obtain thickness, be the tantalum nitride coating of 1 μ m.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010261685.7A CN102373471B (en) | 2010-08-25 | 2010-08-25 | Process method for preparing tantalum nitride coating on surface of commemorative coin die |
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|---|---|---|---|
| CN201010261685.7A CN102373471B (en) | 2010-08-25 | 2010-08-25 | Process method for preparing tantalum nitride coating on surface of commemorative coin die |
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|---|---|
| CN102373471A CN102373471A (en) | 2012-03-14 |
| CN102373471B true CN102373471B (en) | 2014-07-23 |
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| CN111020516A (en) * | 2019-11-22 | 2020-04-17 | 中国航发西安动力控制科技有限公司 | Method for improving self-lubricating property of oil distributing valve |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0867936B1 (en) * | 1997-03-24 | 2004-05-19 | NEC Electronics Corporation | Semiconductor device having a barrier film for preventing penetration of moisture |
| CN1652319A (en) * | 2003-10-31 | 2005-08-10 | 国际商业机器公司 | Plasma enhanced ALD of tantalum nitride and bilayer |
-
2010
- 2010-08-25 CN CN201010261685.7A patent/CN102373471B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0867936B1 (en) * | 1997-03-24 | 2004-05-19 | NEC Electronics Corporation | Semiconductor device having a barrier film for preventing penetration of moisture |
| CN1652319A (en) * | 2003-10-31 | 2005-08-10 | 国际商业机器公司 | Plasma enhanced ALD of tantalum nitride and bilayer |
Non-Patent Citations (6)
| Title |
|---|
| > * |
| < * |
| .1998,第33卷(第3期),263-268. * |
| 曾晓兰等.磁控反应溅射制备Ta-N 薄膜.< * |
| 曾晓兰等.磁控反应溅射制备Ta-N 薄膜.<<西南交通大学学报>>.1998,第33卷(第3期),263-268. |
| 西南交通大学学报> * |
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Address after: 100044 Beijing city Xicheng District Xizhimen Street No. 143 triumph building Patentee after: China Banknote Printing and Minting Group Co.,Ltd. Address before: 100044 Beijing city Xicheng District Xizhimen Street No. 143 Patentee before: CHINA BANKNOTE PRINTING AND MINTING Corp. |
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