CN102364322A - 测量硅片少子寿命的表面处理方法 - Google Patents
测量硅片少子寿命的表面处理方法 Download PDFInfo
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- CN102364322A CN102364322A CN2011101830839A CN201110183083A CN102364322A CN 102364322 A CN102364322 A CN 102364322A CN 2011101830839 A CN2011101830839 A CN 2011101830839A CN 201110183083 A CN201110183083 A CN 201110183083A CN 102364322 A CN102364322 A CN 102364322A
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- Prior art keywords
- silicon chip
- silicon wafer
- rinsing
- minority carrier
- deionized water
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 67
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 67
- 239000010703 silicon Substances 0.000 title claims abstract description 67
- 238000000034 method Methods 0.000 title claims abstract description 36
- 238000004381 surface treatment Methods 0.000 title claims abstract description 15
- 238000012360 testing method Methods 0.000 title abstract description 9
- 239000008367 deionised water Substances 0.000 claims abstract description 26
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000011630 iodine Substances 0.000 claims abstract description 17
- 229910052740 iodine Inorganic materials 0.000 claims abstract description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 16
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 8
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000002156 mixing Methods 0.000 claims abstract description 6
- 238000004140 cleaning Methods 0.000 claims abstract description 4
- 239000003344 environmental pollutant Substances 0.000 claims abstract description 3
- 239000012535 impurity Substances 0.000 claims abstract description 3
- 229910052751 metal Inorganic materials 0.000 claims abstract description 3
- 239000002184 metal Substances 0.000 claims abstract description 3
- 231100000719 pollutant Toxicity 0.000 claims abstract description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 23
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 23
- 229940098465 tincture Drugs 0.000 claims description 15
- 238000002161 passivation Methods 0.000 claims description 14
- 230000002378 acidificating effect Effects 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 8
- 238000005259 measurement Methods 0.000 claims description 8
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- 229960002163 hydrogen peroxide Drugs 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 3
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- 239000012530 fluid Substances 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 239000011777 magnesium Substances 0.000 claims description 2
- 239000002245 particle Substances 0.000 claims description 2
- 229910052708 sodium Inorganic materials 0.000 claims description 2
- 239000011734 sodium Substances 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract description 5
- 238000001035 drying Methods 0.000 abstract description 5
- 229910000040 hydrogen fluoride Inorganic materials 0.000 abstract 3
- 239000000243 solution Substances 0.000 abstract 3
- 239000003929 acidic solution Substances 0.000 abstract 2
- 238000007789 sealing Methods 0.000 abstract 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 14
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 230000009849 deactivation Effects 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 238000006388 chemical passivation reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012372 quality testing Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
Claims (7)
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CN 201110183083 CN102364322B (zh) | 2011-06-30 | 2011-06-30 | 测量硅片少子寿命的表面处理方法 |
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CN 201110183083 CN102364322B (zh) | 2011-06-30 | 2011-06-30 | 测量硅片少子寿命的表面处理方法 |
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CN102364322A true CN102364322A (zh) | 2012-02-29 |
CN102364322B CN102364322B (zh) | 2013-09-04 |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102735510A (zh) * | 2012-06-20 | 2012-10-17 | 常州天合光能有限公司 | 一种测量n型硅片少子寿命的钝化方法 |
CN102856432A (zh) * | 2012-08-12 | 2013-01-02 | 安阳市凤凰光伏科技有限公司 | 硅片表面钝化方法 |
CN103983540A (zh) * | 2014-05-13 | 2014-08-13 | 北京七星华创电子股份有限公司 | 一种判断体铁测试值可信度的方法 |
CN104458374A (zh) * | 2014-12-03 | 2015-03-25 | 湖南江滨机器(集团)有限责任公司 | 一种铝硅合金低倍晶粒度检测样品的制备方法 |
CN108549003A (zh) * | 2018-04-20 | 2018-09-18 | 江苏鑫华半导体材料科技有限公司 | 一种适用于高频光电导衰减法测量半导体级单晶硅少子寿命的预处理方法 |
CN109507559A (zh) * | 2017-09-15 | 2019-03-22 | 上海新昇半导体科技有限公司 | 一种硅片少子寿命的测试方法及测试装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5406214A (en) * | 1990-12-17 | 1995-04-11 | Semilab Felvezeto Fizikai Lab, Rt | Method and apparatus for measuring minority carrier lifetime in semiconductor materials |
JPH10229109A (ja) * | 1997-02-14 | 1998-08-25 | Fujitsu Ltd | 少数キャリアのライフタイムの測定法及び半導体装置の製造方法 |
CN101162694A (zh) * | 2007-11-16 | 2008-04-16 | 中国科学院电工研究所 | 一种测量晶体硅体少子寿命的化学钝化方法 |
CN102062733A (zh) * | 2010-12-09 | 2011-05-18 | 浙江昱辉阳光能源有限公司 | 一种太阳能硅片清洗后表面残留物的检测方法 |
-
2011
- 2011-06-30 CN CN 201110183083 patent/CN102364322B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5406214A (en) * | 1990-12-17 | 1995-04-11 | Semilab Felvezeto Fizikai Lab, Rt | Method and apparatus for measuring minority carrier lifetime in semiconductor materials |
JPH10229109A (ja) * | 1997-02-14 | 1998-08-25 | Fujitsu Ltd | 少数キャリアのライフタイムの測定法及び半導体装置の製造方法 |
CN101162694A (zh) * | 2007-11-16 | 2008-04-16 | 中国科学院电工研究所 | 一种测量晶体硅体少子寿命的化学钝化方法 |
CN102062733A (zh) * | 2010-12-09 | 2011-05-18 | 浙江昱辉阳光能源有限公司 | 一种太阳能硅片清洗后表面残留物的检测方法 |
Non-Patent Citations (1)
Title |
---|
王淑珍等: "制绒Si片清洗工艺的研究", 《半导体技术》, vol. 35, no. 4, 30 April 2010 (2010-04-30), pages 305 - 308 * |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102735510A (zh) * | 2012-06-20 | 2012-10-17 | 常州天合光能有限公司 | 一种测量n型硅片少子寿命的钝化方法 |
CN102856432A (zh) * | 2012-08-12 | 2013-01-02 | 安阳市凤凰光伏科技有限公司 | 硅片表面钝化方法 |
CN103983540A (zh) * | 2014-05-13 | 2014-08-13 | 北京七星华创电子股份有限公司 | 一种判断体铁测试值可信度的方法 |
CN103983540B (zh) * | 2014-05-13 | 2016-03-16 | 北京七星华创电子股份有限公司 | 一种判断体铁测试值可信度的方法 |
CN104458374A (zh) * | 2014-12-03 | 2015-03-25 | 湖南江滨机器(集团)有限责任公司 | 一种铝硅合金低倍晶粒度检测样品的制备方法 |
CN109507559A (zh) * | 2017-09-15 | 2019-03-22 | 上海新昇半导体科技有限公司 | 一种硅片少子寿命的测试方法及测试装置 |
CN108549003A (zh) * | 2018-04-20 | 2018-09-18 | 江苏鑫华半导体材料科技有限公司 | 一种适用于高频光电导衰减法测量半导体级单晶硅少子寿命的预处理方法 |
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CN102364322B (zh) | 2013-09-04 |
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Address after: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee after: trina solar Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. Address after: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee after: TRINASOLAR Co.,Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: trina solar Ltd. |
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