CN102363738A - Water base cutting fluid for cutting silicon wafers - Google Patents
Water base cutting fluid for cutting silicon wafers Download PDFInfo
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- CN102363738A CN102363738A CN201110176262XA CN201110176262A CN102363738A CN 102363738 A CN102363738 A CN 102363738A CN 201110176262X A CN201110176262X A CN 201110176262XA CN 201110176262 A CN201110176262 A CN 201110176262A CN 102363738 A CN102363738 A CN 102363738A
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Abstract
The invention provides a water base cutting fluid for cutting silicon wafers, which consists of glycol, triethanolamine oleate, non-ionic surface active agents, extreme pressure antiwear agents and water. The water base cutting fluid has the advantages that the surface tension of the cutting fluid is greatly reduced, the flowability and the permeability of the cutting fluid are greatly improved, the wettability of the cutting fluid on grinding materials is greatly improved, the dispersibility of the grinding materials is improved, the damage to the silicon wafers brought by aggregation and agglomeration of the grinding materials is avoided, the increase of the silicon wafer cutting yield is facilitated, and the silicon wafer cutting yield can reach 98 percent; and protective films can be formed on the surfaces of the silicon wafers, so the silicon wafers are easier to clean, and the lubricating effect, the abrasion performance and the cooling performance of the cutting fluid are improved.
Description
Technical field
The present invention relates to a kind of cutting fluid, the incisory cutting fluid of particularly a kind of silicon chip.
Background technology
Along with the development of society, the maturation of photovoltaic industry, the use of silicon chip is more and more.Because silicon chip belongs to hard material, its cutting technique occupies very important position in complete processing.Silicon chip has the mortar of abrasive material through the line of cut supply; Realize the cutting of silicon chip through the abrasive wear principle between abrasive material, line of cut and the silicon crystal; This mode can realize the cutting of multi-disc silicon chip; Cutting efficiency is high, but owing to be between abrasive material and the cutting silk more friction to be arranged, higher to the cooling and the lubricating requirement of cutting silk.Silicon chip cutting liquid of the prior art though have lubricated preferably and heat conductivility, exists to wear no resistance, cut the low problem of silicon chip yield rate.
Summary of the invention
Technical problem to be solved by this invention provides the silicon chip cutting that a kind of wear resistance is good, the cutting yield rate is high, cooling performance is good and clean easily and uses cutting fluid.
In order to solve the problems of the technologies described above, water-base cutting fluid is used in a kind of silicon chip cutting of the present invention, is made up of terepthaloyl moietie 60-70%, triethanolamine oleate 2-4%, nonionogenic tenside H3-5%, extreme pressure anti-wear additives 1%, water 24-30%, calculates by percentage to the quality.
Water-base cutting fluid is used in above-mentioned a kind of silicon chip cutting, and wherein, said water is deionized water.
The present invention has greatly reduced the surface tension of cutting fluid; The flowability and the perviousness of cutting fluid have been improved greatly; Greatly improve the wettability of cutting fluid, improved the dispersiveness of abrasive material, avoid the abrasive material reunion to form piece silicon chip is brought damage abrasive material; Help improving the yield rate of silicon chip cutting, make silicon chip cutting yield rate reach 98%; And can form protective membrane at silicon chip surface, silicon chip is cleaned more easily, and improve lubricant effect, wear resistance and the cooling property of cutting fluid.
Embodiment
Below in conjunction with specific embodiment the present invention is described further.
Embodiment one
Water-base cutting fluid is used in a kind of silicon chip cutting of the present invention; Form by terepthaloyl moietie 60%, triethanolamine oleate 4%, nonionogenic tenside H5%, extreme pressure anti-wear additives 1%, water 30%; Calculate by percentage to the quality; Above-mentioned raw materials under the temperature of 120 degree, under the speed with 120r/min, was stirred 2 minutes.
Performance index: with this cutting fluid and S
iThe C abrasive material mixes by 1: 1 ratio of weight and number, carries out the silicon chip cutting, and the cutting blade number is 2000, and the cutting yield rate is 95.1%, and wear resisting property is good, and cooling performance is good, silicon chip is prone to clean.
Embodiment two
Water-base cutting fluid is used in a kind of silicon chip cutting of the present invention, is made up of terepthaloyl moietie 65%, triethanolamine oleate 3%, nonionogenic tenside H3%, extreme pressure anti-wear additives 1%, water 28%, calculates by percentage to the quality.Above-mentioned raw materials under the temperature of 120 degree, under the speed with 120r/min, was stirred 2 minutes.
Performance index: with this cutting fluid and S
iThe C abrasive material mixes by 1: 1 ratio of weight and number, carries out the silicon chip cutting, and the cutting blade number is 2000, and the cutting yield rate is 98.7%, and wear resisting property is good, and cooling performance is good, and silicon chip is prone to clean.
Embodiment three
Water-base cutting fluid is used in a kind of silicon chip cutting of the present invention, is made up of terepthaloyl moietie 70%, triethanolamine oleate 2%, nonionogenic tenside H3%, extreme pressure anti-wear additives 1%, water 24%, calculates by percentage to the quality.Above-mentioned raw materials under the temperature of 120 degree, under the speed with 120r/min, was stirred 2 minutes.
Performance index: with this cutting fluid and S
iThe C abrasive material mixes by 1: 1 ratio of weight and number, carries out the silicon chip cutting, and the cutting blade number is 2000, and the cutting yield rate is 97.7%, and wear resisting property is good, and cooling performance is good, and silicon chip is prone to clean.
Embodiment four
Water-base cutting fluid is used in a kind of silicon chip cutting of the present invention, is made up of terepthaloyl moietie 65%, triethanolamine oleate 3%, nonionogenic tenside H3%, extreme pressure anti-wear additives 1%, deionized water 28%, calculates by percentage to the quality.
Above-mentioned raw materials under the temperature of 120 degree, under the speed with 120r/min, was stirred 2 minutes.
Performance index: with this cutting fluid and S
iThe C abrasive material mixes by 1: 1 ratio of weight and number, carries out the silicon chip cutting, and the cutting blade number is 2000, and the cutting yield rate is 98.8%, and wear resisting property is good, and cooling performance is good, and silicon chip is prone to clean.
Nonionogenic tenside H is that raw material is synthetic with rosin, cis-butenedioic anhydride and polyamine etc.
The triethanolamine oleate ester is to be that raw material is synthetic with oleic acid and trolamine.
Extreme pressure anti-wear additives is a kind of important grease additive, and major part is the compound of some sulfur-bearings, phosphorus, chlorine, lead, molybdenum.
Those of ordinary skill in the art will be appreciated that; Above embodiment is used for explaining the object of the invention; And be not with opposing qualification of the present invention; As long as in essential scope of the present invention, all will drop in the scope of claim of the present invention variation, the modification of the above embodiment.
Claims (2)
1. water-base cutting fluid is used in a silicon chip cutting, it is characterized in that, is made up of terepthaloyl moietie 60-70%, triethanolamine oleate 2-4%, nonionogenic tenside H3-5%, extreme pressure anti-wear additives 1%, water 24-30%, calculates by percentage to the quality.
2. water-base cutting fluid is used in a kind of according to claim 1 silicon chip cutting, it is characterized in that said water is deionized water.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110176262XA CN102363738A (en) | 2011-06-27 | 2011-06-27 | Water base cutting fluid for cutting silicon wafers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110176262XA CN102363738A (en) | 2011-06-27 | 2011-06-27 | Water base cutting fluid for cutting silicon wafers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102363738A true CN102363738A (en) | 2012-02-29 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110176262XA Pending CN102363738A (en) | 2011-06-27 | 2011-06-27 | Water base cutting fluid for cutting silicon wafers |
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| CN (1) | CN102363738A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102899150A (en) * | 2012-09-28 | 2013-01-30 | 上海群乐船舶附件启东有限公司 | Metal cutting fluid |
| CN102952620A (en) * | 2012-10-18 | 2013-03-06 | 奥克化学扬州有限公司 | Water-based cutting fluid of hard brittle material and preparation method of water-based cutting fluid |
| CN103305326A (en) * | 2013-07-09 | 2013-09-18 | 金陵科技学院 | Monocrystalline silicon cutting fluid |
| CN103952211A (en) * | 2014-03-03 | 2014-07-30 | 西安通鑫半导体辅料有限公司 | Composite cutting fluid used for solar silicon wafer manufacturing and its preparation method |
| CN103952224A (en) * | 2014-03-03 | 2014-07-30 | 西安通鑫半导体辅料有限公司 | Aqueous dissociating abrasive cutting fluid used for making solar silicon wafer and its preparation method |
| CN104498171A (en) * | 2014-12-31 | 2015-04-08 | 镇江市港南电子有限公司 | Cutting fluid for high-efficiency silicon wafer cutting |
| CN105062622A (en) * | 2015-08-11 | 2015-11-18 | 苏州市宝玛数控设备有限公司 | Cutting fluid for fretsaw cutting |
| CN105132095A (en) * | 2015-07-31 | 2015-12-09 | 苏州市宝玛数控设备有限公司 | Diamond wire cutting liquid of silicon sheet multi-wire sawing machine |
| CN105617719A (en) * | 2016-03-01 | 2016-06-01 | 常州高特新材料有限公司 | Foam inhibitor and application thereof |
| US9803156B2 (en) | 2012-12-06 | 2017-10-31 | Dow Global Technologies Llc | Aqueous cutting fluid composition |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1858169A (en) * | 2006-05-31 | 2006-11-08 | 河北工业大学 | Semiconductor silicon material water base cutting liquid |
| CN101935576A (en) * | 2010-10-09 | 2011-01-05 | 辽宁奥克化学股份有限公司 | Cutting fluid with anti-oxidation performance, preparation method and application thereof |
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2011
- 2011-06-27 CN CN201110176262XA patent/CN102363738A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1858169A (en) * | 2006-05-31 | 2006-11-08 | 河北工业大学 | Semiconductor silicon material water base cutting liquid |
| CN101935576A (en) * | 2010-10-09 | 2011-01-05 | 辽宁奥克化学股份有限公司 | Cutting fluid with anti-oxidation performance, preparation method and application thereof |
Non-Patent Citations (2)
| Title |
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| 李东光等: "《精细化学品配方（二）》", 30 November 2008, 江苏科学技术出版社 * |
| 王家序等: "水基切削液的研制及应用", 《润滑与密封》 * |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102899150A (en) * | 2012-09-28 | 2013-01-30 | 上海群乐船舶附件启东有限公司 | Metal cutting fluid |
| CN102952620A (en) * | 2012-10-18 | 2013-03-06 | 奥克化学扬州有限公司 | Water-based cutting fluid of hard brittle material and preparation method of water-based cutting fluid |
| CN102952620B (en) * | 2012-10-18 | 2014-12-24 | 奥克化学扬州有限公司 | Water-based cutting fluid of hard brittle material and preparation method of water-based cutting fluid |
| US9803156B2 (en) | 2012-12-06 | 2017-10-31 | Dow Global Technologies Llc | Aqueous cutting fluid composition |
| CN103305326A (en) * | 2013-07-09 | 2013-09-18 | 金陵科技学院 | Monocrystalline silicon cutting fluid |
| CN103952211A (en) * | 2014-03-03 | 2014-07-30 | 西安通鑫半导体辅料有限公司 | Composite cutting fluid used for solar silicon wafer manufacturing and its preparation method |
| CN103952224A (en) * | 2014-03-03 | 2014-07-30 | 西安通鑫半导体辅料有限公司 | Aqueous dissociating abrasive cutting fluid used for making solar silicon wafer and its preparation method |
| CN104498171A (en) * | 2014-12-31 | 2015-04-08 | 镇江市港南电子有限公司 | Cutting fluid for high-efficiency silicon wafer cutting |
| CN105132095A (en) * | 2015-07-31 | 2015-12-09 | 苏州市宝玛数控设备有限公司 | Diamond wire cutting liquid of silicon sheet multi-wire sawing machine |
| CN105062622A (en) * | 2015-08-11 | 2015-11-18 | 苏州市宝玛数控设备有限公司 | Cutting fluid for fretsaw cutting |
| CN105617719A (en) * | 2016-03-01 | 2016-06-01 | 常州高特新材料有限公司 | Foam inhibitor and application thereof |
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Application publication date: 20120229 |