CN102361033B - Pixel structure for display panel and manufacturing method thereof - Google Patents
Pixel structure for display panel and manufacturing method thereof Download PDFInfo
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- CN102361033B CN102361033B CN 201110308824 CN201110308824A CN102361033B CN 102361033 B CN102361033 B CN 102361033B CN 201110308824 CN201110308824 CN 201110308824 CN 201110308824 A CN201110308824 A CN 201110308824A CN 102361033 B CN102361033 B CN 102361033B
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Abstract
The invention discloses a pixel structure for a display panel. The pixel structure comprises a substrate, a thin film transistor, a first transparent connection gasket, a protection layer and a transparent pixel electrode, wherein the thin film transistor is arranged on the substrate, and comprises a gate, a gate insulating layer, a semiconductor channel layer, a source and a drain; the gate insulating layer is positioned on a gate and the substrate; the semiconductor channel layer is positioned on the gate insulating layer; the source and the drain are positioned on the semiconductor channellayer; the first transparent connection gasket is arranged above the drain, is overlapped with a part of the drain and is electrically connected with the drain; the protection layer is provided with a contact hole which is positioned above the first transparent connection gasket to at least expose a part of the first transparent connection gasket; and the transparent pixel electrode is positionedabove the protection layer, and is electrically connected with the first transparent connection gasket through the contact hole of the protection layer.
Description
Technical field
The present invention relates to image element structure of a kind of display floater and preparation method thereof, refer to image element structure of a kind of display floater with high aperture and preparation method thereof especially.
Background technology
Display floater has been widely used in various electronic product at present to meet the compact demand of electronic product, in addition, for the consumer is provided the preferable quality of viewing and admiring when browsing page or the ornamental film, continuing to improve resolution (resolution) is one of important development direction for display floater.
In order to improve resolution, often need by the number that increases image element structure in the display floater, but the metal wire of thereupon setting up will reduce the aperture opening ratio (aperture ratio) of image element structure, and be unfavorable for utilance backlight, and cause the brightness of display floater to descend, that is to say, for the display floater that aperture opening ratio is descended reaches same brightness, need to increase the power consumption (power consumption) of backlight module to improve backlight illumination.
Therefore, the aperture opening ratio that how to improve image element structure is the improved problem of correlation technique person institute desire with resolution and the brightness demand that meets display floater simultaneously in fact.
Summary of the invention
In view of the deficiencies in the prior art, the object of the present invention is to provide image element structure of a kind of display floater and preparation method thereof, with the aperture opening ratio of the image element structure that improves display floater.
To achieve these goals; technical scheme of the present invention is: a kind of image element structure of display floater, it comprises a substrate, a thin-film transistor, one first transparent connection gasket, a protective layer, a transparent pixel electrode, an insulating barrier, a transparent storage capacitors electrode, a gate line, a data wire and a capacitor storage beam.Thin-film transistor is arranged on the substrate, and thin-film transistor comprises a gate, a gate insulation layer, semiconductor channel layer, one source pole and a drain.Wherein gate insulation layer is positioned at the top of gate and substrate, and the channel semiconductor layer is positioned at the top of gate insulation layer, and source electrode and drain are positioned at the top of channel semiconductor layer.The first transparent connection gasket is arranged at the top of drain, and wherein the first transparent connection gasket partly overlaps with drain and contacts and electrically connect with drain.Protective layer is positioned at the top of the first transparent connection gasket, and wherein protective layer has at least one contact hole, and at least part of first transparent connection gasket that exposes in contact hole.Transparent pixel electrode is positioned at the top of protective layer, and wherein transparent pixel electrode contacts and electrically connects with the first transparent connection gasket via the contact hole of protective layer.This insulating barrier is between this thin-film transistor and this protective layer.This transparent storage capacitors electrode is between this insulating barrier and this protective layer, and wherein this transparent storage capacitors electrode partly overlaps with this transparent pixel electrode and forms a storage capacitors.This gate line is arranged on this substrate and with this gate and electrically connects; This data wire is arranged at the top of this gate insulation layer and electrically connects with this source electrode; This capacitor storage beam is arranged on this insulating barrier and with this transparent storage capacitors electrode and electrically connects.
To achieve these goals, the present invention provides a kind of method of making the image element structure of display floater in addition, and its step is as follows: a substrate is provided, and forms a thin-film transistor on substrate.Thin-film transistor comprises a gate, a gate insulation layer, semiconductor channel layer, one source pole and a drain.Wherein gate insulation layer is positioned at the top of gate and substrate, and the channel semiconductor layer is positioned at the top of gate insulation layer, and source electrode and drain are positioned at the top of channel semiconductor layer.On drain, form one first transparent connection gasket, and the first transparent connection gasket and drain partly overlaps and electrically connect with drain.On this thin-film transistor, form an insulating barrier.On this insulating barrier, form a transparent storage capacitors electrode.Form a protective layer on the first transparent connection gasket, protective layer has at least one contact hole, and at least part of first transparent connection gasket that exposes in contact hole.On protective layer, form a transparent pixel electrode, and transparent pixel electrode is via contact hole and the first transparent connection gasket electric connection of protective layer.
The present invention electrically connects transparent pixel electrode and drain with transparent connection gasket, and wherein transparent connection gasket is arranged at drain top, partly overlaps with drain and electrically connects with drain.Transparent connection gasket can be used as the extension of drain, that is the zone of drain and the electric connection of other assembly.The transparent connection gasket of forming with transparent material replaces the opaque metal drain of part in the known techniques, can increase the transparent region in the image element structure and improves aperture opening ratio.
Description of drawings
Fig. 1 has illustrated the schematic diagram of image element structure of the display floater of first preferred embodiment of the present invention.
Fig. 2 has illustrated the image element structure of display floater of first preferred embodiment of the present invention along the generalized section of Figure 1A-A ' line segment.
Fig. 3 has illustrated the image element structure of display floater of first preferred embodiment of the present invention along the generalized section of Figure 1B-B ' line segment.
Fig. 4 has illustrated the schematic diagram of image element structure of the display floater of second preferred embodiment of the present invention.
Fig. 5 has illustrated the image element structure of display floater of second preferred embodiment of the present invention along the generalized section of Fig. 4 B-B ' line segment.
Fig. 6 has illustrated the schematic diagram of image element structure of the display floater of the 3rd preferred embodiment of the present invention.
Fig. 7 has illustrated the image element structure of display floater of the 3rd preferred embodiment of the present invention along the generalized section of Fig. 6 A-A ' line segment.
Fig. 8 has illustrated the image element structure of display floater of the 3rd preferred embodiment of the present invention along the generalized section of Fig. 6 B-B ' line segment.
Fig. 9 to Figure 12 has illustrated the manufacture method schematic diagram of image element structure of the display floater of first preferred embodiment of the present invention.
Figure 13 has illustrated the manufacture method schematic diagram of image element structure of the display floater of second preferred embodiment of the present invention.
Figure 14 has illustrated the manufacture method schematic diagram of image element structure of the display floater of the 3rd preferred embodiment of the present invention.
[primary clustering symbol description]
10 image element structures, 11 image element structures
12 substrates, 13 image element structures
14 gate lines, 16 data wires
18 thin-film transistors, 20 first transparent connection gaskets
22 protective layer 22A contact the hole
24 transparent pixel electrode 26 gates
28 gate insulation layer, 30 channel semiconductor layers
32 source electrodes, 34 drains
36 insulating barrier 36A contact the hole
38 capacitor storage beam, 40 transparent storage capacitors electrodes
42 second transparent connection gasket 44 first transparent connection gaskets.
Embodiment
For making the general skill person who has the knack of the technical field of the invention can further understand the present invention, hereinafter the spy enumerates preferred embodiment of the present invention, and cooperate appended graphic, describe in detail constitution content of the present invention and the effect desiring to reach.
Please refer to Fig. 1, Fig. 2 and Fig. 3.Fig. 1 has illustrated the schematic diagram of image element structure of the display floater of first preferred embodiment of the present invention.Fig. 2 has illustrated the image element structure of display floater of first preferred embodiment of the present invention along the generalized section of Figure 1A-A ' line segment.Fig. 3 has illustrated the image element structure of display floater of first preferred embodiment of the present invention along the generalized section of Figure 1B-B ' line segment.As Fig. 1, Fig. 2 and shown in Figure 3, the image element structure 10 of the display floater of present embodiment comprises a substrate 12, a gate line 14, a data wire 16, a thin-film transistor 18, one first transparent connection gasket 20, a protective layer 22 and a transparent pixel electrode 24.Substrate 12 can be that a transparency carrier comprises hard substrate for example glass substrate, quartz base plate, plastic base etc., or the soft substrate plate of other bendable material.Gate line 14, data wire 16 and thin-film transistor 18 are arranged on the substrate 12, and thin-film transistor 18 is positioned at the infall of gate line 14 and data wire 16, but not as limit.Thin-film transistor 18 comprises a gate 26, a gate insulation layer 28, semiconductor channel layer 30, one source pole 32 and a drain 34.Gate insulation layer 28 is positioned at the top of gate 26 and substrate 12, and channel semiconductor layer 30 is positioned at the top of gate insulation layer 28, and source electrode 32 and drain 34 are positioned at the top of channel semiconductor layer 30.Gate line 14 electrically connects with gate 26, and data wire 16 is arranged at the top of gate insulation layer 28, and electrically connects with source electrode 32, and the first transparent connection gasket 20 is arranged at top and the overlapping of drain 34 parts of drain 34, and electrically connects with drain 34.Gate line 14, data wire 16, source electrode 32 can be for example metal of opaque electric conducting material with the material of drain 34, and the material of the first transparent connection gasket 20 can be transparent conductive material for example indium tin oxide (ITO) or indium-zinc oxide (IZO) etc., but not as limit.Protective layer 22 is positioned at the top of the first transparent connection gasket 20, and protective layer 22 has at least one contact hole 22A, at least part of first transparent connection gasket 20 that exposes.Transparent pixel electrode 24 is positioned at the top of protective layer 22, and transparent pixel electrode 24 electrically connects via contact hole 22A and the first transparent connection gasket 20 of protective layer 22.
The image element structure 10 of display floater comprises an insulating barrier 36, a capacitor storage beam 38 (Fig. 1 does not show), a transparent storage capacitors electrode 40 in addition.Insulating barrier 36 is between thin-film transistor 18 and protective layer 22, and capacitor storage beam 38 and transparent storage capacitors electrode 40 are arranged at respectively between insulating barrier 36 and the protective layer 22.Speak by the book, capacitor storage beam 38 is positioned at the top of data wire 16, and transparent storage capacitors electrode 40 is positioned at the top of capacitor storage beam 38.Capacitor storage beam 38 electrically connects with transparent storage capacitors electrode 40, and transparent storage capacitors electrode 40 overlaps with transparent pixel electrode 24 parts and forms a storage capacitors.Transparent storage capacitors electrode 40 is arranged on capacitor storage beam 38 and the data wire 16, and part covers capacitor storage beam 38 and data wire 16.The setting of transparent storage capacitors electrode 40 can be used for increasing the storage capacitors value, on the other hand, also can avoid the electric field instability at image element structure 10 edges.
It should be noted that; in the present embodiment; the first transparent connection gasket 20 is to contact and electrically connect with drain 34; wherein the first transparent connection gasket 20 does not need can directly contact via contacting the hole with drain 34; and transparent pixel electrode 24 is that the contact hole 22A via protective layer 22 contacts and electrically connects with the first transparent connection gasket 20; that is to say that the drain 34 that transparent pixel electrode 24 can see through the first transparent connection gasket 20 and the first transparent connection gasket, 20 belows electrically connects.The present invention replaces the opaque drain 34 of part with the first transparent connection gasket 20, as the zone that electrically connects with transparent pixel electrode 24, can increase the transparent region of image element structure 10, that is the zone of passing through backlight of display floater, with the aperture opening ratio of the image element structure 10 that promotes display floater.
The image element structure of display floater of the present invention is not limited with the above embodiments, can have other different execution mode yet.For the purpose of simplifying the description and be easy to comparison, in the preferred embodiment hereinafter, continue to use identical symbol for same components and represent.Please refer to Fig. 4 and Fig. 5.Fig. 4 has illustrated the schematic diagram of image element structure of the display floater of second preferred embodiment of the present invention.Fig. 5 has illustrated the image element structure of display floater of second preferred embodiment of the present invention along the generalized section of Fig. 4 B-B ' line segment.In addition, the image element structure of the display floater of second preferred embodiment of the present invention is along the generalized section of Fig. 4 A-A ' line segment, please in the lump with reference to figure 2.As Fig. 2, Fig. 4 and shown in Figure 5, in second preferred embodiment, the image element structure 11 of display floater comprises one second transparent connection gasket 42 in addition, and the second transparent connection gasket 42 is by being constituted with one deck transparent conductive patterns layer with transparent storage capacitors electrode 40, that is to say, the second transparent connection gasket 42 can define to save the light shield number by same light shield with the pattern of transparent storage capacitors electrode 40, but not as limit.In addition, transparent storage capacitors electrode 40 is arranged on capacitor storage beam 38 and the data wire 16, and part covers capacitor storage beam 38 and data wire 16, and the second transparent connection gasket 42 is arranged on the first transparent connection gasket 20, wherein transparent storage capacitors electrode 40 and the second transparent connection gasket 42 electrical company property not.In addition; insulating barrier 36 has at least one contact hole 36A in order at least part of first transparent connection gasket 20 that exposes; wherein the second transparent connection gasket 42 is that contact hole 36A via insulating barrier 36 contacts and electrically connects with the first transparent connection gasket 20, and transparent pixel electrode 24 is that contact hole 22A via protective layer 22 contacts and electrically connects with the second transparent connection gasket 42.The drain 34 that transparent pixel electrode 24 can see through the second transparent connection gasket 42 and the first transparent connection gasket 20 and the first transparent connection gasket, 20 belows electrically connects.It should be noted that the present invention replaces opaque drain 34 partly with transparent connection gasket, wherein the number of transparent connection gasket is not limited with single.
Please refer to Fig. 6, Fig. 7 to Fig. 8.Fig. 6 has illustrated the schematic diagram of image element structure of the display floater of the 3rd preferred embodiment of the present invention.Fig. 7 has illustrated the image element structure of display floater of the 3rd preferred embodiment of the present invention along the generalized section of Fig. 6 A-A ' line segment.Fig. 8 has illustrated the image element structure of display floater of the 3rd preferred embodiment of the present invention along the generalized section of Fig. 6 B-B ' line segment.As Fig. 6, Fig. 7 and shown in Figure 8, in the present embodiment, be with the first preferred embodiment difference, the first transparent connection gasket 44 of the image element structure 13 of display floater is by being constituted with one deck transparent conductive patterns layer with transparent storage capacitors electrode 40, that is to say that the first transparent connection gasket 44 can be by same light shield definition with the pattern of transparent storage capacitors electrode 40.Also have; in the present embodiment; transparent storage capacitors electrode 40 and capacitor storage beam 38 are preferably and are arranged in regular turn between insulating barrier 36 and the protective layer 22, and be different with the configuration scenario that capacitor storage beam 38 in first preferred embodiment and transparent storage capacitors electrode 40 are arranged between insulating barrier 36 and the protective layer 22 in regular turn.
It should be noted that in the present embodiment the first transparent connection gasket 44 is by being constituted with one deck transparent conductive patterns layer with transparent storage capacitors electrode 40, compared to first preferred embodiment, can save the light shield of one definition, first transparent connection gasket 20 patterns.In addition, transparent storage capacitors electrode 40 is arranged between insulating barrier 36 and the protective layer 22, and part is overlapped in capacitor storage beam 38 and data wire 16.Speak by the book, transparent storage capacitors electrode 40 is positioned at the top of data wire 16, and capacitor storage beam 38 is positioned at the top of transparent storage capacitors electrode 40.And the first transparent connection gasket 44 is arranged on the drain 34, and therefore, transparent storage capacitors electrode 40 and the first transparent connection gasket 44 be electrical company property not.In addition; insulating barrier 36 has at least one contact hole 36A in order at least part of drain 34 that exposes; the first transparent connection gasket 44 is that the contact hole 36A via insulating barrier 36 contacts and electrically connects with drain 34, and transparent pixel electrode 24 to be contact hole 22A and first transparent connection gaskets 44 via protective layer 22 electrically connect.The drain 34 that transparent pixel electrode 24 can see through the first transparent connection gasket 44 and the first transparent connection gasket, 44 belows electrically connects.The present invention replaces the opaque drain 34 of part with the transparent first transparent connection gasket 44, reaches the electric connection of transparent pixel electrode 24 and drain 34, with the aperture opening ratio of the image element structure 13 that promotes display floater.
Please refer to Fig. 9 to Figure 12.Fig. 9 to Figure 12 has illustrated the manufacture method schematic diagram of image element structure of the display floater of first preferred embodiment of the present invention.As shown in Figure 9, provide a substrate 12, and on substrate 12, form a thin-film transistor 18.Thin-film transistor 18 comprises a gate 26, a gate insulation layer 28, semiconductor channel layer 30, one source pole 32 and a drain 34.Wherein gate insulation layer 28 is positioned at the top of gate 26 and substrate 12, and channel semiconductor layer 30 is positioned at the top of gate insulation layer 28, and source electrode 32 and drain 34 are positioned at the top of channel semiconductor layer 30.The method that forms thin-film transistor 18 can comprise the following step: at first, on substrate 12, form a first metal layer (not shown), then this first metal layer of patterning is to form a plurality of gate line (not shown) and a plurality of gate 26, form gate insulation layer 28 and semiconductor layer 30 subsequently in regular turn, and then form one second metal level (not shown), and this second metal level of patterning is to form a plurality of data wire (not shown), a plurality of source electrode 32 and a plurality of drain 34.
As shown in figure 10, on drain 34, form one first transparent connection gasket 20.The first transparent connection gasket 20 overlaps with drain 34 parts and electrically connects with drain 34.The material of the first transparent connection gasket 20 can be transparent conductive material for example indium tin oxide (ITO) or indium-zinc oxide (IZO) etc.The method that forms the first transparent connection gasket 20 comprises that comprehensive deposition one transparent conductive material layer (not shown) is on substrate, and utilize a micro image etching procedure patterning transparent conductive material layer, correspond to drain 34 and be positioned at the first transparent connection gasket 20 of drain 34 tops with formation, and the first transparent connection gasket 20 contacts with drain 34.The first transparent connection gasket 20 overlaps with drain 34 parts and electrically connects with drain 34, that is to say that the first transparent connection gasket 20 can be used as the extension of drain 34, that is can be used as the zone of follow-up drain 34 and the electric connection of other assembly.The present invention can increase the transparent region in the image element structure, to improve aperture opening ratio with the opaque metal drain 34 of part in the first transparent transparent connection gasket 20 replacement known techniques.
Next, as shown in figure 11, on thin-film transistor 18, form an insulating barrier 36, and insulating barrier 36 is the tops that are positioned at the first transparent connection gasket 20.The material of insulating barrier 36 can be for example resin of organic transparent insulation material.Then, part that can be removed insulating barrier 36 makes to have at least one contact hole 36A.The method of removing comprises carries out a dry ecthing procedure.At least part of first transparent connection gasket 20 that exposes of the contact hole 36A of insulating barrier 36.In addition, for providing image element structure more stable fringe field, also can on insulating barrier 36, further form a capacitor storage beam 38 and a transparent storage capacitors electrode (not shown).Capacitor storage beam 38 by conductive material for example metal constitute, and be preferably for be arranged at gate line and data wire the top, to avoid influencing the aperture opening ratio of image element structure.The material of transparent storage capacitors electrode can be transparent conductive material for example indium tin oxide (ITO) or indium-zinc oxide (IZO) etc.Transparent storage capacitors electrode and capacitor storage beam 38 electrically connects, and transparent storage capacitors electrode can receive the message of capacitor storage beam 38, and partly overlaps with the transparent pixel electrode of follow-up formation and form a storage capacitors.
Afterwards, as shown in figure 12, form a protective layer 22 on the first transparent connection gasket 20, the material of protective layer 22 for example can be organic transparent insulation material: resin.Remove partial protection layer 22 afterwards; the method of removing comprises carries out a dry ecthing procedure; make protective layer 22 have at least one contact hole 22A; and at least part of first transparent connection gasket 20 that exposes of the contact hole 22A of protective layer 22; at this moment, the contact hole 22A of protective layer 22 is connected with the hole 36A that contacts of insulating barrier 36.Then, 22 form a transparent electrode layer (not shown) on protective layer, and its material can be transparent conductive material for example indium tin oxide (ITO) or indium-zinc oxide (IZO) etc., and the patterned transparent electrode layer is to form transparent pixel electrode 24.Wherein transparent pixel electrode 24 electrically connects via the contact hole 22A of protective layer 22 and contact hole 36A and the first transparent connection gasket 20 of insulating barrier 36.That is to say that the drain 34 that transparent pixel electrode 24 can see through the first transparent connection gasket 20 and the first transparent connection gasket, 20 belows electrically connects.
It should be noted that, transparent pixel electrode sees through the process sequence that transparent connection gasket and drain electrically connect and disposes and is not limited with above-mentioned among the present invention, and the method that forms transparent connection gasket can also can be integrated in the processing procedure of other image element structure for independent processing procedure as above-mentioned.Please refer to Figure 13, and please in the lump with reference to figure 5 and Figure 11.Figure 13 has illustrated the manufacture method schematic diagram of image element structure of the display floater of second preferred embodiment of the present invention.As shown in figure 13, behind the contact hole 36A and capacitor storage beam 38 that form insulating barrier 36, just when forming transparent storage capacitors electrode 40, also can form one second transparent connection gasket 42 on insulating barrier 36, the processing procedure that also is about to the second transparent connection gasket 42 is integrated in the processing procedure of transparent storage capacitors electrode 40.In more detail, the second transparent connection gasket 42 is by being constituted with one deck transparent conductive patterns layer with transparent storage capacitors electrode 40, when transparent storage capacitors electrode 40 is formed on the capacitor storage beam 38, the second transparent connection gasket 42 also is formed on the first transparent connection gasket 20, and does not electrically connect between transparent storage capacitors electrode 40 and the second transparent connection gasket 42.Afterwards; form protective layer 22 on insulating barrier 36 and cover capacitor storage beam 38 and transparent storage capacitors electrode 40; remove partial protection layer 22 again to form at least one contact hole 22A; and the contact hole 22A exposed portion second transparent connection gasket 42 of protective layer 22; afterwards; form the transparent pixel electrode 24 of a patterned transparent electrode layer on protective layer 22, to finish the image element structure as Fig. 5.At this moment; the first transparent connection gasket 20 is directly to contact and electrically connect with drain 34; the second transparent connection gasket 42 is via the contacting first transparent connection gasket 20 contacts that hole 36A exposes and electrically connect of the contact hole 36A of insulating barrier 36 and insulating barrier 36, and transparent pixel electrode 24 to be contact hole 22A via protective layer 22 contact and electrically connect with the second transparent connection gasket 42.In brief, transparent pixel electrode 24 can see through drain 34 electric connections of the second transparent connection gasket 42 and the first transparent connection gasket 20 and the first transparent connection gasket, 20 belows.
Please refer to Figure 14, and please in the lump with reference to figure 8 and Figure 11.Figure 14 has illustrated the manufacture method schematic diagram of image element structure of the display floater of the 3rd preferred embodiment of the present invention.As shown in figure 14, after the contact hole 36A that forms insulating barrier 36 and before the formation capacitor storage beam 38, just when forming transparent storage capacitors electrode 40, also can form one first transparent connection gasket 44 on insulating barrier 36, the processing procedure that also is about to the first transparent connection gasket 44 is integrated in the processing procedure of transparent storage capacitors electrode 40.In more detail, the first transparent connection gasket 44 is by being constituted with one deck transparent conductive patterns layer with transparent storage capacitors electrode 40.When transparent storage capacitors electrode 40 was formed on the insulating barrier 36, the first transparent connection gasket 44 also was formed on the drain 34 simultaneously, and did not electrically connect between transparent storage capacitors electrode 40 and the first transparent connection gasket 44.In the present embodiment, because after the first transparent connection gasket 44 was formed at insulating barrier 36, therefore, the contact hole 36A of insulating barrier 36 was that part exposes drain 34, being different from the previous embodiment is that part exposes the first transparent connection gasket 20.Afterwards, form the capacitor storage beam 38 of patterning and protective layer 22 more in regular turn on insulating barrier 36, protective layer 22 can cover capacitor storage beam 38 and transparent storage capacitors electrode 40.Remove partial protection layer 22 again to form at least one contact hole 22A; the contact hole 22A exposed portion first transparent connection gasket 44 of protective layer 22; the transparent electrode layer that then forms a patterning as transparent pixel electrode 24 on protective layer 22, to finish the image element structure as Fig. 8.At this moment, the first transparent connection gasket 44 is that the contact hole 36A via insulating barrier 36 contacts and electrically connects with drain 34, contacts and electrically connects with the first transparent connection gasket 44 and transparent pixel electrode 24 is contact hole 22A via protective layer 22.In brief, transparent pixel electrode 24 can see through drain 34 electric connections of the first transparent connection gasket 44 and the first transparent connection gasket, 44 belows.
In sum, the present invention electrically connects transparent pixel electrode and drain with transparent connection gasket, and wherein transparent connection gasket is arranged at drain top, partly overlaps with drain and electrically connects with drain.Transparent connection gasket can be used as the extension of drain, that is the zone of drain and the electric connection of other assembly.The transparent connection gasket of forming with transparent material replaces the opaque metal drain of part in the known techniques, can reduce light tight area in the image element structure, that is to say, increases the transparent region in the image element structure and improves aperture opening ratio.In addition, the processing procedure of transparent connection gasket also can integrate to reduce that light shield uses and save cost with other processing procedure of display floater, for example among the present invention the first transparent connection gasket can with transparent storage capacitors electrode by defining jointly with one deck transparent conductive patterns layer.
The above only is preferred embodiment of the present invention, and all equalizations of doing according to the present patent application claim change and modify, and all should belong to covering scope of the present invention.
Claims (5)
1. the image element structure of a display floater is characterized in that, comprising:
One substrate;
One thin-film transistor is arranged on this substrate, and this thin-film transistor comprises: a gate; One gate insulation layer is positioned at the top of this gate and this substrate; The semiconductor channel layer is positioned at the top of this gate insulation layer; And one source pole and a drain, be positioned at the top of this channel semiconductor layer;
One first transparent connection gasket is arranged at the top of this drain, and wherein this first transparent connection gasket partly overlaps with this drain and contacts and electrically connect with this drain;
One protective layer is positioned at the top of this first transparent connection gasket, and wherein this protective layer has at least one contact hole, at least part of this first transparent connection gasket that exposes;
One transparent pixel electrode is positioned at the top of this protective layer, and wherein this transparent pixel electrode contacts and electrically connects with this first transparent connection gasket via this contact hole of this protective layer;
One insulating barrier is between this thin-film transistor and this protective layer;
One transparent storage capacitors electrode, between this insulating barrier and this protective layer, wherein this transparent storage capacitors electrode partly overlaps with this transparent pixel electrode and forms a storage capacitors;
One gate line is arranged on this substrate and electrically connects with this gate;
One data wire is arranged at the top of this gate insulation layer and electrically connects with this source electrode; And
One capacitor storage beam is arranged on this insulating barrier and electrically connects with this transparent storage capacitors electrode;
This first transparent connection gasket is by being constituted with one deck transparent conductive patterns layer with this transparent storage capacitors electrode; this insulating barrier has at least one contact hole; at least part of this drain that exposes; this first transparent connection gasket is that this contact hole via this insulating barrier contacts and electrically connects with this drain, and this transparent pixel electrode is that this contact hole via this protective layer contacts and electrically connects with this first transparent connection gasket.
2. the image element structure of a display floater is characterized in that, comprising:
One substrate;
One thin-film transistor is arranged on this substrate, and this thin-film transistor comprises: a gate; One gate insulation layer is positioned at the top of this gate and this substrate; The semiconductor channel layer is positioned at the top of this gate insulation layer; And one source pole and a drain, be positioned at the top of this channel semiconductor layer;
One first transparent connection gasket is arranged at the top of this drain, and wherein this first transparent connection gasket partly overlaps with this drain and contacts and electrically connect with this drain;
One protective layer is positioned at the top of this first transparent connection gasket, and wherein this protective layer has at least one contact hole, at least part of this first transparent connection gasket that exposes;
One transparent pixel electrode is positioned at the top of this protective layer, and wherein this transparent pixel electrode contacts and electrically connects with this first transparent connection gasket via this contact hole of this protective layer;
One insulating barrier is between this thin-film transistor and this protective layer;
One transparent storage capacitors electrode, between this insulating barrier and this protective layer, wherein this transparent storage capacitors electrode partly overlaps with this transparent pixel electrode and forms a storage capacitors;
One gate line is arranged on this substrate and electrically connects with this gate;
One data wire is arranged at the top of this gate insulation layer and electrically connects with this source electrode; And
One capacitor storage beam is arranged on this insulating barrier and electrically connects with this transparent storage capacitors electrode;
More comprise one second transparent connection gasket; wherein this insulating barrier has at least one contact hole; at least part of this first transparent connection gasket that exposes; this second transparent connection gasket is that this contact hole via this insulating barrier contacts and electrically connects with this first transparent connection gasket; this transparent pixel electrode is that this contact hole via this protective layer contacts and electrically connects with this second transparent connection gasket, and this second transparent connection gasket is by being constituted with one deck transparent conductive patterns layer with this transparent storage capacitors electrode.
3. a method of making the image element structure of display floater is characterized in that, comprising:
One substrate is provided;
Form a thin-film transistor on this substrate, wherein this thin-film transistor comprises: a gate; One gate insulation layer is positioned at the top of this gate and this substrate; The semiconductor channel layer is positioned at the top of this gate insulation layer; And one source pole and a drain, be positioned at the top of this channel semiconductor layer;
Form one first transparent connection gasket on this drain, wherein this first transparent connection gasket and this drain partly overlap and electrically connect with this drain;
On this thin-film transistor, form an insulating barrier;
On this insulating barrier, form a transparent storage capacitors electrode;
Form a protective layer on this first transparent connection gasket, wherein this protective layer has at least one contact hole, at least part of this first transparent connection gasket that exposes; And
Form a transparent pixel electrode on this protective layer, wherein this transparent pixel electrode electrically connects via this contact hole and this first transparent connection gasket of this protective layer;
This insulating barrier is the top that is positioned at this first transparent connection gasket; this insulating barrier has at least one contact hole; at least part of this first transparent connection gasket that exposes; this first transparent connection gasket is to contact and electrically connect with this drain, and this transparent pixel electrode is to contact and electrically connect with this first transparent connection gasket via this contact hole of this protective layer and this contact hole of this insulating barrier.
4. a method of making the image element structure of display floater is characterized in that, comprising:
One substrate is provided;
Form a thin-film transistor on this substrate, wherein this thin-film transistor comprises: a gate; One gate insulation layer is positioned at the top of this gate and this substrate; The semiconductor channel layer is positioned at the top of this gate insulation layer; And one source pole and a drain, be positioned at the top of this channel semiconductor layer;
Form one first transparent connection gasket on this drain, wherein this first transparent connection gasket and this drain partly overlap and electrically connect with this drain;
On this thin-film transistor, form an insulating barrier;
On this insulating barrier, form a transparent storage capacitors electrode;
Form a protective layer on this first transparent connection gasket, wherein this protective layer has at least one contact hole, at least part of this first transparent connection gasket that exposes; And
Form a transparent pixel electrode on this protective layer, wherein this transparent pixel electrode electrically connects via this contact hole and this first transparent connection gasket of this protective layer;
This first transparent connection gasket is the top that is positioned at this insulating barrier; this insulating barrier has at least one contact hole; at least part of this drain that exposes; this first transparent connection gasket is that this contact hole via this insulating barrier contacts and electrically connects with this drain; and this transparent pixel electrode is that this contact hole via this protective layer contacts and electrically connects with this first transparent connection gasket, and this first transparent connection gasket is by being constituted with one deck transparent conductive patterns layer with this transparent storage capacitors electrode.
5. a method of making the image element structure of display floater is characterized in that, comprising:
One substrate is provided;
Form a thin-film transistor on this substrate, wherein this thin-film transistor comprises: a gate; One gate insulation layer is positioned at the top of this gate and this substrate; The semiconductor channel layer is positioned at the top of this gate insulation layer; And one source pole and a drain, be positioned at the top of this channel semiconductor layer;
Form one first transparent connection gasket on this drain, wherein this first transparent connection gasket and this drain partly overlap and electrically connect with this drain;
On this thin-film transistor, form an insulating barrier;
On this insulating barrier, form a transparent storage capacitors electrode;
Form a protective layer on this first transparent connection gasket, wherein this protective layer has at least one contact hole, at least part of this first transparent connection gasket that exposes; And
Form a transparent pixel electrode on this protective layer, wherein this transparent pixel electrode electrically connects via this contact hole and this first transparent connection gasket of this protective layer;
More be included in and form one second transparent connection gasket on this insulating barrier; wherein this insulating barrier is the top that is positioned at this first transparent connection gasket; this insulating barrier has at least one contact hole; at least part of this first transparent connection gasket that exposes; this first transparent connection gasket is to contact and electrically connect with this drain; this second transparent connection gasket is that this contact hole via this insulating barrier contacts and electrically connects with this first transparent connection gasket; and this transparent pixel electrode is that this contact hole via this protective layer contacts and electrically connects with this second transparent connection gasket, and this second transparent connection gasket is by being constituted with one deck transparent conductive patterns layer with this transparent storage capacitors electrode.
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| CN103531593B (en) * | 2013-10-29 | 2015-03-04 | 京东方科技集团股份有限公司 | Pixel structure, array substrate, display device and manufacturing method of pixel structure |
| CN114121931A (en) * | 2020-08-26 | 2022-03-01 | 长鑫存储技术有限公司 | Electrostatic protection device and electrostatic protection circuit |
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| TW442979B (en) * | 2000-04-28 | 2001-06-23 | Unipac Optoelectronics Corp | Manufacturing method of thin-film transistor |
| KR100382955B1 (en) * | 2000-10-10 | 2003-05-09 | 엘지.필립스 엘시디 주식회사 | Method for fabricating the array substrate for Liquid crystal display device and the same |
| TWI322505B (en) * | 2006-10-25 | 2010-03-21 | Chunghwa Picture Tubes Ltd | Pixel structure |
| JP2012027046A (en) * | 2008-11-21 | 2012-02-09 | Sharp Corp | Liquid crystal display device |
| CN101562154B (en) * | 2009-03-24 | 2011-12-07 | 福州华映视讯有限公司 | Manufacturing method of thin film transistor |
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