CN102360545B - Addressing method of magnetic biological array chip - Google Patents
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- CN102360545B CN102360545B CN201110225501.6A CN201110225501A CN102360545B CN 102360545 B CN102360545 B CN 102360545B CN 201110225501 A CN201110225501 A CN 201110225501A CN 102360545 B CN102360545 B CN 102360545B
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Abstract
The invention discloses an addressing method of a magnetic biological array chip. The method provides multiple word lines for at least one row of lattice points in a magnetic biological array, and the row of lattice points are connected to the word lines. In an operation process, at least two lattice points in the row are activated through different word lines.
Description
Technical field
The present patent application relates generally to biochip, specifically, relates to the addressing of magnetic bio array chip.
Background technology
Magnetic bio array chip is (referred to as " magnetic bio array " or " array ") utilizes nano magnetic particle to identify biomolecule and measures the mode testing biological specimen in the micro-magnetic field of nano magnetic particle and enters biomolecule etc.For the sake of simplicity, in this instructions, magnetic bio array chip is called for short " magnetic bio array " or " array." magnetic bio array often comprises multiple lattice point, these lattice points rearrange a magnetic bio array according to matrix row and column.Lattice point in array is that a measuring unit can be used for measuring biomolecule.Lattice point to the measurement of biomolecule based on micro-magnetic field measurement technology, often adopt sensitive giant magnetoresistance structures, such as Spin Valve (spin valve, SV), magnetic tunnelling (magnetic tunnel junction, MTJ) and some other magnetoresistance effect stacked structure.For the purpose of illustration, Fig. 1 schematically illustrates a magnetic bio array of the prior art.
With reference to Fig. 1, magnetic bio array 100 comprises lattice point according to the arrangement of matrix row and column as lattice point 102.Lattice point is a magnetic sensor, and the general giant magnetoresistance structures that adopts is as measurement core, and one of them example is schematically shown in fig. 2.With reference to figure 2, lattice point 102 comprises the sensing layer 120 on substrate 118 and substrate 118.Sensing layer 120 comprises biostrome 104, free layer 108, space layer 110, pinning layer 112, inverse ferric magnetosphere 116 and measurement galvanic electrode 106 and 114.The direction of magnetization of free layer 108 can change according to tested magnetic field of the goal (such as the induced magnetic field of nano magnetic particle 122) in measuring process.The direction of magnetization of pinning layer 112 is fixed by inverse ferric magnetosphere 116, and thus in the process measured, the direction of magnetization of pinning layer 112 does not change.Space layer 110 can be different according to different magnetic-field measurement structures.Such as, measure in structure (such as magnetic tunneling junction structure MTJ) at CPP (current perpendicular to plane) as shown in Figure 2, space layer 110 can be non magnetic dielectric film, and its thickness is about 1 nanometer.In other measurement structure is as CIP (current in plane) structure (as Spin Valve SV), space layer 110 can be nonmagnetic conductive film.Measure galvanic electrode 106 to be connected with the two ends (such as along the two ends of major axis horizontal direction) of pinning layer 112 with free layer 108, space layer 110 respectively with 114, make measurement electric current I
salong being parallel to the direction (as along major axis horizontal direction) of thin film planar by free layer 108, space layer 110 and pinning layer 112.
In an actual measurement, known biomolecule (bioprobe) is prepositioned is fixed by biofilm 104 on biofilm 104.Biomolecule to be measured identify by nano magnetic particle 122.Biomolecule to be measured after mark is moved on lattice point 102 carries out hydridization with bioprobe.After hybridisation process completes, pin mark 102 surface is cleaned.If biomolecule to be measured is not mated with bioprobe, biomolecule to be measured is removed from lattice point 102 surface after cleaning.If biomolecule to be measured is mated with bioprobe, will there is hydridization in them.Bioprobe after hydridization and biomolecule to be measured are had an effect and are formed hydridization combination 121.Hydridization combination 121 is fixed on biofilm surface by biofilm, still stays biofilm surface after cleaning.Whether biomolecule to be measured and bioprobe hydridization occurs this lattice point exists with or without nano particle after cleaning by measuring and how much obtains.In conjunction with hydridization result and known bioprobe information, biomolecular information to be measured can be pushed off out.
Lattice point (as lattice point 102) in magnetic bio array (as shown in Figure 1) is by wordline and bit line addressing and operation.An example is schematically shown in figure 3.With reference to Fig. 3, be principle of specification simply, 6 lattice points arranged in a line are in an array demonstrated out.A line in reality can have the lattice point of arbitrary number.Lattice point (as lattice point 102) with a line is connected to same wordline 126, and wordline is connected to a wordline selector 124.In array, multiple or whole wordline is connected to same or multiple wordline selector.Wordline selector can by the mode of coding in specific selection of time specifically a certain wordline.This mode by wordline selector selection particular word line has had a lot of relevant technology current, repeats no more here.Each lattice point is connected to a bit line as bit line 130.Bit line in array is connected to bit line selector 128.Bit line selector 128 is responsible for selecting specific bit line in the specific moment.Utilize the combination of wordline and bit line, in array, each lattice point can operate addressed and independently.
The mode that in prior art, this employing wordline connects all lattice points in a line is not best for the measurement of biomolecule, this connection (addressing) mode can produce the signal coupling coming from neighbour's lattice point, finally brings error to measurement result.This error in some cases (such as when multiple hydridization occurs a lattice point thus under having the simultaneous situation of multiple magnetic nanoparticle) can become very serious, finally directly causes measuring unsuccessfully.This neighbour's signal coupling is because such as when wordline selector 124 have selected wordline 126 time, all lattice points being connected to wordline 126 all will be activated.When this activation comprise apply external magnetic field the exciting field of magnetising nano-particles (be such as used for) time, the externally-applied magnetic field on all lattice points all will be activated simultaneously.Externally-applied magnetic field on neighbour's lattice point will superpose, thus changes the design load in magnetic field.This change causes final measuring error.
The invention provides a kind of addressing mode of magnetic bio array to reduce or to remove the measuring error produced by neighbour's lattice point signal coupling, thus improve measuring accuracy.
Summary of the invention
In first embodiment, disclose a magnetic bio array, this magnetic bio array comprises: according to the lattice point of row and column arrangement, each lattice point comprises at least one magnetic field measurement unit; Have at least a line lattice point to be connected to first and second wordline in array, wherein first character line connects the Part I lattice point in this row, and second wordline is connected to Part II lattice point in this row; Corresponding bit line is connected to separately with the lattice point being connected to first and second wordline in this row.
Disclose a method in the second embodiment, the method comprises: provide a magnetic bio array, and this array comprises the lattice point according to row and column arrangement, and each lattice point comprises a Magnetic Measurement unit; With by the lattice point in this array a line of multiple word line activating, in this row, at least two lattice points are activated by different wordline.
Accompanying drawing explanation
By the detailed description below in conjunction with accompanying drawing, each exemplary embodiment of the present invention can clearly be understood.
Fig. 1 schematically illustrates a magnetic bio array in prior art;
Fig. 2 schematically illustrates a lattice point structure of magnetic bio array in Fig. 1;
Fig. 3 schematically illustrates the addressing mode of magnetic bio array in Fig. 1;
Fig. 4 schematically illustrates the addressing mode example of the magnetic bio array that the present invention relates to;
Fig. 5 show schematically a lattice point of the magnetic bio array that the present invention relates to;
Fig. 6 schematically illustrates the addressing mode example of another magnetic bio array that the present invention relates to, and this addressing mode example can be used to the magnetic bio array comprising lattice point as shown in Figure 5;
Fig. 7 schematically illustrates the lattice point structure that the present invention relates to; With
Fig. 8 schematically illustrates another lattice point structure that the present invention relates to.
Embodiment
The several selected example that the present invention can be used for lattice point addressing in magnetic bio array is introduced in detail below in conjunction with accompanying drawing.It will be understood by those skilled in the art that following introduction is for illustrative purposes, should not be construed limitation of the present invention.Other changes are within the scope of the present invention also contained in the present invention.
In order to eliminate the signal disturbing between neighbour's lattice point, the mode that the present invention adopts timesharing to activate.Specifically, the lattice point in array is divided into multiple different subarray, each subarray at least comprises 1 lattice point.Different subarrays comprises different lattice points, and same lattice point only belongs to a specific subarray.Subarray can not have overlap on locus, and overlap ratio of also can having living space is as formed the space cover structure of subarray.Such as, in a line of array, be in odd positions (1,3,5 ...) lattice point form a subarray (odd number subarray), and be in even number position (2,4,6 ...) lattice point form another subarray (even number subarray).Odd number subarray and even number subarray are spatially cover structures.In other example, the lattice point of a subarray is not necessarily continuously arranged lattice point in an array.In such as array a line, { dot matrix of 1,2,7,8} just can form a subarray to be in position.In fact, in array, the combination of any lattice point can form submatrix point.Lattice point in identical active region can be activated simultaneously, and the lattice point in different active region can decide their activation sequential according to the impact of signal disturbing.The overlapping serious zones of different of those signals, even number subarray and odd number subarray in such as go together (or same column), can carry out activating and operate to eliminate or reduce the signal coupling between them in the different time periods.Those signal couplings and the less different subarrays that interact can section activate and operation, at one time to reduce the running time and to reduce system design complexity.In general, the number of subarray being increased in different time sections operation will reduce the interference between signal coupling and signal, improves measuring accuracy; But on the other hand but add Measuring Time, improve difficulty prepared by the complexity of system and product.So need balance between the number and the complexity (and product prepares difficulty) of system of the subarray of different time sections operation, and the pacing items of balance is the requirement fully meeting Surveying Actual Precision.
As one embodiment of the present of invention, Fig. 4 show schematically the schematic diagram of the circuit of an addressing.For simply and not losing generality of the present invention, Fig. 4 illustrates 6 lattice points in magnetic bio array in a line as explanation.It is worthy of note, a line of array can comprise the lattice point of arbitrary number.6 lattice points shown in Fig. 4, just in order to principle of specification, should not be construed one restriction of the present invention.
As shown in Figure 4, in array, the lattice point of a line is divided into even number subarray and odd number subarray.The lattice point of this row has been assigned with two wordline: wordline 134 and wordline 136.These two wordline 134 and 136 are connected to wordline selector 132.Two wordline 134 are connected the lattice point in even number subarray and the lattice point in odd number subarray respectively with 136.Specifically, every root wordline is connected to the gate pole (gate) of CMOS (complimentary metal-oxide-silicon) transistor, and the functional structure of lattice point (in such as lattice point for generation of the excitation current exciting magnetic field) is connected to the source electrode (source) of this transistor.The grid (drain) of this transistor is connected to corresponding bit line, such as bit line 138.Bit line is pooled to bit line selector 140.
Because the lattice point in even number subarray and odd number subarray is connected to different wordline (such as 134 and 136), activation and the operation of the lattice point in even number subarray and odd number subarray are completed by different wordline.Suitable selection activates sequential, and even number subarray and odd number subarray can be activated in the different time periods and operate, and forms even number subarray and the segmentation in time of odd number subarray.Such as, activate wordline 134 a time period (measuring period) thus activate the lattice point in the even number subarray be connected in wordline 134.In the process that wordline 134 activates, wordline 136 is in unactivated state (deactivate).After the lattice point in even number subarray completes a measuring period, wordline 134 is switched to unactivated state.After being in stable unactivated state sometime, wordline 136 can be activated wordline 134, thus activates the lattice point in odd number subarray.Lattice point in the odd number word array be activated can be measured.After measurement completes, wordline 136 is switched to unactivated state, the lattice point in odd number word array thus be in unactivated state.The segmentation of this time domain eliminates signal coupling between arest neighbors lattice point (lattice point on adjacent odd and even number position) and interference, thus improves measuring accuracy.
Word array space cover structure shown in Fig. 4 and multiword line are connected to the space cover configuration formula of word array structure and the word array that principle can be applied to other form.The word array cover structure of such as even number subarray as shown in Figure 4 and odd number subarray form can eliminate the signal coupling between arest neighbors lattice point, and the signal coupling between secondary neighbour's lattice point also can overlap structure by subarray and the linear formula of multiword is eliminated.Specifically, in array, a line can be divided into three subarrays.Subarray 1 comprise position for the lattice point of 3i-2, i=1, n}, wherein 3 × n is the total number of lattice point in this row; Subarray 2 comprises position for { lattice point of 3i-1, i=1, n}, it is { the lattice point of 3i, i=1, n} that subarray 3 comprises position.Subarray 1,2 and 3 is connected respectively to three independently wordline.In the operation to this row lattice point, the operating cycle comprises three non-parallel subcycles (such as continuous print).Each subarray corresponds to a subcycle.When a subarray operates in a subcycle time, other subarray is in unactivated state.It is worthy of note, the operation of three subarrays can be carried out with any order.Such as, three subarrays can according to 3, and 1, the order of 2 or other order operate.
In actual applications, magnetic bio array often uses multiple magnetic field measurement unit to carry out measuring instrument raising precision to single target magnetic field.Specifically, a lattice point in array can comprise reference unit and signal element.Reference unit and signal element can be measured magnetic field.Difference is, a specific Measuring Time, and signal element measurement target magnetic field, and the measurement that reference unit is signal element provides reference signal with the measurement of calibrating signal unit.An example generally used is, reference unit and signal element are connected to a Wheatstone bridge (Wheatstone Bridge).Reference unit can be capped soft magnetic film and carry out magnetic shielding reference unit, and signal element is exposed to direct measurement target magnetic field in magnetic field of the goal.Reference unit also can equally with signal element be exposed in magnetic field of the goal in some instances.In these examples, the concrete function of reference unit and signal element is determined by the sequential of circuit and controls.Such as, a particular moment, signal element measurement target magnetic field and complementary field (as exciting magnetic field) in reference unit measurement environment.In another particular moment, signal element measures complementary field and reference unit measurement target magnetic field.The measured value of magnetic field of the goal determines according to twice measurement result.No matter how reference unit and signal element are specifically implemented on single lattice point, and lattice point can comprise reference unit and signal element measurement target magnetic field to improve precision.As an example, Fig. 5 schematically illustrates a lattice point.
With reference to figure 5, this lattice point comprises and is placed on reference unit 148 on substrate 152 and signal element 150.Control circuit and data (control data and measurement data etc.) transmission circuit is comprised in substrate 152.Reference unit 148 covers biological insulation film 144, this biological insulation film 144 can not fixing biological molecules, and in other words, the biomolecule on this biological insulation film 144 can be removed by cleaning or cannot be resident on this biological insulation film.Signal element 150 covers biofilm 146, this biofilm can fixing biological molecules.This lattice point also comprises one and excites magnetic field units to be used for producing secondary magnetic field Hext, this magnetic field units that excites can have multiple choices to realize, such as a section lead (such as at one section of substrate surface straight wire, or two sections of straight and wire groups be parallel to each other) or the vertical coil etc. placed.The time sequential routine circuit of reference unit 148 and signal element 150 is comprised in substrate circuitry.
When there is in the lattice point that an array comprises reference unit and signal element simultaneously time (as shown in Figure 5), a kind of simple circuits addresses and the triumphant circuit adopted as shown in Figure 6 of control method.Certainly, also more complicated addressing and control circuit can be adopted.With reference to Fig. 6, the lattice point of arest neighbors is connected to different wordline, and such as lattice point 141 is connected to wordline 136, and lattice point 142 is connected to wordline 134.Reference unit in same lattice point and signal element are connected to different bit lines, and the reference unit 148 in such as lattice point 142 is connected to bit line 162, and signal element 150 is connected to bit line 164.Wordline and bit line are pooled to wordline selector 132 and bit line selector 140 respectively.
Addressing mode described above can be applied in multiple magnetic bio array.As an example, Fig. 7 schematically illustrates a lattice point of magnetic bio array, and this lattice point is based on magnetic tunneling effect (Magnetic Tunnel Junction).With reference to figure 7, this lattice point comprises substrate 184 and the sensing layer on substrate 184 123.Sensing layer 123 comprises free layer 174, space layer 176, pinning layer 178, inverse ferric magnetosphere 182, biofilm 146 and tunnelling current electrode 172 and 180.
Free layer 174 is magnetospheres, and its direction of magnetization can change with magnetic field of the goal in the process of magnetic-field measurement.Space layer 176 is dielectric layers, and its thickness is approximately 1 nanometer.Pinning layer 178 is magnetospheres, and its direction of magnetization is fixed by inverse ferric magnetosphere 182, therefore constant in measuring process.In this example, tunnelling current electrode 172 and 180 is placed according to the mode of CPP (current perpendicular to the plane), and that is, the placement of tunnelling current electrode 172 and 180 makes tunnelling current I
sat least free layer 174, space layer 176 and pinning layer 178 is run through along the direction perpendicular to thin film planar (direction along perpendicular to free layer 174, space layer 176 and pinning layer 178 plane).Tunnelling current electrode 172 and 180 also can be placed according to the mode of CIP (current in planes), and namely the placement of tunnelling current electrode 172 and 180 makes tunnelling current I
sat least free layer 174, space layer 176 and pinning layer 178 is flow through along the direction being parallel to free layer 174, space layer 176 and pinning layer 178 plane.Under the mode of CIP, space layer 176 is non-magnetic conductive layers.This structure is called as spin valve structure (spin valve).
Under CIP and CPP or other structure, this lattice point (not certain requirement) can comprise hard magnetic layer 168.The obstruct temperature (blocking temperature) of hard magnetic layer 168 is equal to or greater than the normal working temperature such as room temperature of this lattice point.In some instances, hard magnetic layer 168 has and to equal or higher than 200 DEG C, the obstruct temperature of such as 250 DEG C or 300 DEG C.Generally, the obstruct temperature of hard magnetic layer 168 is between 150 DEG C to 350 DEG C.Hard magnetic layer 168 is connected to a heating current source, and this heating current source provides heating current I in operation for hard magnetic layer 168
h.This heating current can flow through hard magnetic layer along the direction of hard magnetic layer 168 plane, also can flow through hard magnetic layer 168 along the normal direction of hard magnetic layer 168 plane.
Alternatively, when this lattice point comprises hard magnetic layer 168 time, this lattice point also can comprise thermoresistance layer 170, and this thermoresistance layer 170 can be placed on upper surface and/or the lower surface of hard magnetic layer 168.Thermoresistance layer has lower thermal conductivity and (is such as equal to or less than 2.0Wm
-1k
-1) and higher conductivity (conductivity such as when temperature is 20 DEG C is 37.8 × 10
6s/m or higher).Thermoresistance layer 170 1 aspect can play heat-insulating effect, makes hard magnetic layer 168 be unlikely to affect other function film layer in the process of heating.On the other hand, thermoresistance layer 170 can make with less heating current I
hmake the temperature that hard magnetic layer 168 reaches predetermined.Such as, if without thermoresistance layer 170, the temperature (higher than room temperature) making hard magnetic layer 168 reach predetermined needs heating current I
h1, and after using thermoresistance layer 170, hard magnetic layer 168 reaches identical predetermined temperature (higher than room temperature) needs heating current I
h2, and I
h2< I
h1.
As another example, Fig. 8 schematically illustrates a lattice point of magnetic bio array, and this lattice point is based on magnetic tunneling effect (Magnetic Tunnel Junction).With reference to figure 8, this lattice point comprises substrate 184 and the sensing layer on substrate 184 125.Sensing layer 125 comprises biofilm 146, free layer 188, space layer 190, pinning layer 178, inverse ferric magnetosphere 182 and tunnelling current electrode 172 and 180.
Different from the free layer 174 shown in Fig. 7, the free layer 188 in Fig. 8 has the magnetic properties similar with hard magnetic layer in Fig. 7 168.Free layer 188 in Fig. 8 has the obstruct temperature higher than lattice point normal working temperature (such as room temperature).The obstruct temperature of this free layer 188 equals or higher than 200 DEG C, the obstruct temperature of such as 250 DEG C or 300 DEG C.Generally, the obstruct temperature of free layer 188 is between 150 DEG C to 350 DEG C.Free layer 188 is connected to a heating current source, and this heating current source provides heating current I in operation for free layer 188
h.This heating current can flow through free layer along the direction of free layer 188 plane, also can flow through free layer 188 along the normal direction of free layer 188 plane.
Space layer 190 is dielectric layers, and its thickness is approximately 1 nanometer.Pinning layer 178 is magnetospheres, and its direction of magnetization is fixed by inverse ferric magnetosphere 182, therefore constant in measuring process.In this example, tunnelling current electrode 172 and 180 is placed according to the mode of CPP (current perpendicular to the plane), and that is, the placement of tunnelling current electrode 172 and 180 makes tunnelling current I
sat least free layer 188, space layer 190 and pinning layer 178 is run through along the direction perpendicular to thin film planar (direction along perpendicular to free layer 188, space layer 190 and pinning layer 178 plane).Tunnelling current electrode 172 and 180 also can be placed according to the mode of CIP (current in planes), and namely the placement of tunnelling current electrode 172 and 180 makes tunnelling current I
sat least free layer 188, space layer 190 and pinning layer 178 is flow through along the direction being parallel to free layer 188, space layer 190 and pinning layer 178 plane.Under the mode of CIP, space layer 190 is non-magnetic conductive layers.
Under CIP and CPP or other structure, this lattice point (not certain requirement) can comprise thermoresistance layer 170, and this thermoresistance layer 170 can be placed on upper surface and/or the lower surface of free layer 188.Thermoresistance layer 170 has lower thermal conductivity and (is such as equal to or less than 2.0Wm
-1k
-1) and higher conductivity (conductivity such as when temperature is 20 DEG C is 37.8 × 10
6s/m or higher).Thermoresistance layer 170 1 aspect can play heat-insulating effect, makes free layer 188 be unlikely to affect other function film layer in the process of heating.On the other hand, thermoresistance layer 170 can make with less heating current I
hmake the temperature that free layer 188 reaches predetermined.Such as, if without thermoresistance layer 170, the temperature (higher than room temperature) making free layer 188 reach predetermined needs heating current I
h1, and after using thermoresistance layer 170, free layer 188 reaches identical predetermined temperature (higher than room temperature) needs heating current I
h2, and I
h2< I
h1.
It will be appreciated by those skilled in the art that the object of above discussion is to introduce, the above-mentioned example is the some in many possible examples, and other modification is also feasible.
" embodiment ", " embodiment ", " exemplary embodiment " etc. mentioned in this instructions, its implication is, the concrete property, structure or the feature that describe in conjunction with this embodiment comprise at least one embodiment of the present invention.This phrase occurred everywhere at instructions not necessarily refers to same embodiment.In addition, when describing concrete property, structure or feature in conjunction with any embodiment, this means those skilled in the art can this characteristic, structure or feature application in other embodiment.And for ease of understanding, certain methods step is described to independently step; But the step of these independent descriptions should not be considered to perform in a certain order.That is, some steps also can perform according to other order simultaneously.In addition, exemplary diagram shows the various methods according to the embodiment of the present invention.Here this exemplary method embodiment utilizes corresponding device embodiment to describe, and can be applied to these corresponding device embodiments.But these embodiments of the method are not to limit the present invention.
Although show here and describe several embodiments of the present invention, those skilled artisans will appreciate that and can change these embodiments and not depart from principle of the present invention and spirit.Therefore, above each embodiment is said from any sense and all should be considered to illustrative instead of to restriction of the present invention as described herein.Scope of the present invention is limited by appending claims instead of above-mentioned instructions.All changes in the implication and scope of the equivalent description of instructions are included in scope of the present invention.The term " preferably " used in this manual is not exclusive, and its implication is " be preferably but be not limited to ".Term in claims, when consistent with the universal of the present invention described by instructions, should explain according to their most wide region.Such as, term " connection " and " coupling " (and deriving from vocabulary) mean directly be indirectly connected/be coupled.As another example, " have " and " comprising " and derivative thereof and variation word or phrase all and " comprising " have the identical meaning (that is, being all " open " term)-only have phrase " by ... form " and " in fact by ... formation " " closing type " should be considered to.Should not explain claims according to the 6th section of 112 articles, unless phrase " means " and relevant function appears in a certain claim, and this claim does not describe sufficient structure to perform this function.
Claims (13)
1. a magnetic bio array, comprising:
According to the lattice point of row and column arrangement, each lattice point comprises at least one magnetic field measurement unit, and wherein, described lattice point comprises: substrate, and this substrate comprises a circuit; With the sensor layer of on substrate, this sensor layer comprises: free layer, and the direction of magnetization of this free layer can change with magnetic field of the goal; Pinning layer, the direction of magnetization of this pinning layer does not change with magnetic field of the goal; Inverse ferric magnetosphere is used for fixing the direction of magnetization of pinning layer; Non magnetic space layer, this space layer is clipped between free layer and pinning layer; Thermoresistance layer, this thermoresistance layer is in upper surface or the lower surface of free layer; Biological Thin rete covers the upper surface of sensor layer; Measure galvanic electrode at least two, free layer, non magnetic space layer, pinning layer are sandwiched between these at least two galvanic electrodes; At least two thermocurrent electrodes, these at least two thermocurrent Electrode connection heat to free layer and a current source this free layer;
Have at least a line lattice point to be connected to first and second wordline in array, wherein first character line connects the Part I lattice point in this row, and second wordline is connected to Part II lattice point in this row; With
The lattice point being connected to first and second wordline in this row is connected to corresponding bit line separately.
2. magnetic bio array as claimed in claim 1, wherein, Part I lattice point comprises the lattice point being in odd positions in this row, and Part II lattice point comprises the lattice point being in even number position in this row.
3. magnetic bio array as claimed in claim 1, wherein, the lattice point of Part I is a part for first subarray of this magnetic bio array, the lattice point of Part II is a part for second subarray of this magnetic bio array, and the first subarray and the second subarray form cover structure in this magnetic bio array.
4. magnetic bio array as claimed in claim 1, wherein, the lattice point of Part I is a part for first subarray of this magnetic bio array, the lattice point of Part II is a part for second subarray of this magnetic bio array, and the first subarray is separated in space in this magnetic bio array with the second subarray.
5. magnetic bio array as claimed in claim 1, wherein, the lattice point of Part I is a part for first subarray of this magnetic bio array, the lattice point of Part II is a part for second subarray of this magnetic bio array, the arest neighbors each other mutually of the lattice point in the lattice point in the first subarray and the second subarray.
6. magnetic bio array as claimed in claim 1, wherein, the lattice point of Part I is a part for first subarray of this magnetic bio array, the lattice point of Part II is a part for second subarray of this magnetic bio array, this magnetic bio array comprises three sub-array row, the first subarray, the second subarray and three sub-array row at least wherein two complete structures of sub-matrix-like.
7. magnetic bio array as claimed in claim 1, wherein, the conductivity of thermoresistance layer 20 DEG C time is equal to or higher than 37.8 × 10
6s/m, thermoresistance layer thermal conductivity at 0.05Wm
-1k
-1to 1.5Wm
-1k
-1between.
8. a magnetic bio array, comprises:
According to the lattice point of row and column arrangement, each lattice point comprises at least one magnetic field measurement unit, and wherein, described lattice point comprises: substrate, and this substrate comprises a circuit; With the sensor layer of on substrate, this sensor layer comprises: free layer, and the direction of magnetization of this free layer can change with magnetic field of the goal; Pinning layer, the direction of magnetization of this pinning layer does not change with magnetic field of the goal; Inverse ferric magnetosphere is used for fixing the direction of magnetization of pinning layer; Non magnetic space layer, this space layer is clipped between free layer and pinning layer; Hard magnetic layer, the obstruct temperature of this hard magnetic layer is higher than room temperature; Thermoresistance layer, this thermoresistance layer is in upper surface or the lower surface of hard magnetic layer; Biological Thin rete covers the upper surface of sensor layer; Measure galvanic electrode at least two, free layer, non magnetic space layer, pinning layer are sandwiched between these at least two galvanic electrodes; At least two thermocurrent electrodes, these at least two thermocurrent Electrode connection heat to hard magnetic layer and a current source this hard magnetic layer;
Have at least a line lattice point to be connected to first and second wordline in array, wherein first character line connects the Part I lattice point in this row, and second wordline is connected to Part II lattice point in this row; With
The lattice point being connected to first and second wordline in this row is connected to corresponding bit line separately.
9. magnetic bio array as claimed in claim 8, wherein, the conductivity of thermoresistance layer 20 DEG C time is equal to or higher than 37.8 × 10
6s/m, the thermal conductivity of thermoresistance layer is equal to or less than 2.0Wm
-1k
-1.
10. magnetic bio array as claimed in claim 8, wherein, non magnetic space layer is a dielectric layer, its thickness is equal to or less than 1 nanometer, measures electric current by measuring the vertical direction of galvanic electrode along free layer, non magnetic space layer and pinning layer at least through free layer, non magnetic space layer and pinning layer.
11. magnetic bio arrays as claimed in claim 8, wherein, non magnetic space layer is a conductive layer, measures electric current by measuring galvanic electrode along being parallel to the direction of free layer, non magnetic space layer and pinning layer at least through free layer, non magnetic space layer and pinning layer.
The addressing method of 12. 1 kinds of magnetic bio arrays, comprises:
There is provided a magnetic bio array, this array comprises the lattice point according to row and column arrangement, and each lattice point comprises a Magnetic Measurement unit, and wherein, the sensor layer of described lattice point comprises the thermoresistance layer being in free layer upper surface or lower surface;
Be less than the free layer not comprising thermoresistance layer lattice point and reach for described free layer provides the electric current intercepted needed for temperature;
To be activated the lattice point in this array a line according to the space overlap timesharing of lattice point by multiple wordline, in this row, at least two lattice points are activated by different wordline.
13. methods as claimed in claim 12, are wherein comprised by the lattice point in this array a line of multiple word line activating:
This row is divided into multiple subarray, and different subarrays comprises different lattice points; With
Lattice point in different subarray is connected to different wordline, and the lattice point in identical subarray is connected to identical wordline.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110225501.6A CN102360545B (en) | 2010-12-05 | 2011-08-08 | Addressing method of magnetic biological array chip |
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|---|---|---|---|
| CN201010584809.5 | 2010-12-05 | ||
| CN201010584809 | 2010-12-05 | ||
| CN2010105848095 | 2010-12-05 | ||
| CN201110225501.6A CN102360545B (en) | 2010-12-05 | 2011-08-08 | Addressing method of magnetic biological array chip |
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| CN102360545A CN102360545A (en) | 2012-02-22 |
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| CN1510417A (en) * | 2002-12-21 | 2004-07-07 | 海力士半导体有限公司 | Biological sensor and sensing unit array |
| CN1512603A (en) * | 2002-12-31 | 2004-07-14 | 有研稀土新材料股份有限公司 | Oxide giant magnet resistor spin valve, preparing process and its use |
| CN1599938A (en) * | 2001-08-28 | 2005-03-23 | 英特尔公司 | Multiple word-line accessing and accessor |
| CN101080820A (en) * | 2004-10-18 | 2007-11-28 | 德克萨斯仪器股份有限公司 | Scrambling method to reduce wordline coupling noise |
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| CN1599938A (en) * | 2001-08-28 | 2005-03-23 | 英特尔公司 | Multiple word-line accessing and accessor |
| CN1510417A (en) * | 2002-12-21 | 2004-07-07 | 海力士半导体有限公司 | Biological sensor and sensing unit array |
| CN1512603A (en) * | 2002-12-31 | 2004-07-14 | 有研稀土新材料股份有限公司 | Oxide giant magnet resistor spin valve, preparing process and its use |
| CN101080820A (en) * | 2004-10-18 | 2007-11-28 | 德克萨斯仪器股份有限公司 | Scrambling method to reduce wordline coupling noise |
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