CN102359837B - Beam film combined sensor structure - Google Patents
Beam film combined sensor structure Download PDFInfo
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- CN102359837B CN102359837B CN 201110253241 CN201110253241A CN102359837B CN 102359837 B CN102359837 B CN 102359837B CN 201110253241 CN201110253241 CN 201110253241 CN 201110253241 A CN201110253241 A CN 201110253241A CN 102359837 B CN102359837 B CN 102359837B
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- resistance layer
- pressure
- piezo
- brace summer
- sensitive resistance
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Abstract
The invention provides a beam film combined sensor structure which comprises a support beam at a bottom. An upper part of the support beam is a pressure-sensitive resistance layer. A surface layer of the pressure-sensitive resistance layer is a passive film. A cross section of the support beam is an upright right angle trapezoid. The upper part of the support beam is provided with a protection strip which has an equal height with the pressure-sensitive resistance layer and the passive film. The protection strip is used for restricting lateral movement of the pressure-sensitive resistance layer and the passive film at the surface of the pressure-sensitive resistance layer, and protecting a side surface of the pressure-sensitive resistance layer. The cross section of the support beam is an upright right angle trapezoid, i.e., a wide edge of the right angle trapezoid is at a lower part, a narrow edge of the right angle trapezoid is at an upper part, thus pressure received by the upper part narrow edge is dispersed in a sector form, and a stress requirement of supporting a shell by the bottom is reduced.
Description
Technical field
The present invention relates to a kind of pressure sensor structure, specifically the sensor construction that combines with brace summer of passivating film.
Background technology
Most important part is to experience the piezo-resistance of pressure in the MEMS pressure sensor, and structural formula commonly used adopts four piezo-resistances to form the Hui Sitong bridge.So pressure sensor structure commonly used all can relate to one deck piezo-resistance layer.In the process of using owing to need to the piezo-resistance layer be protected; and simultaneously need to be with pressure bearing after experiencing pressure; so just brace summer need to be arranged; brace summer commonly used all is inverted trapezoidal structure; support the pressure of experiencing by trapezoidal narrow limit; and broadside does not need to bear pressure; in order to guarantee enough support strengths; that trapezoidal narrow limit need to be designed is enough wide; so just cause waste of material to a certain degree; and pressure sensor structure commonly used employing all is layer structure; i.e. outside passivating film; piezo-resistance; support beam structure all has independently layering; do not intersect each other; so also just can not play corresponding restriction; so present employed pressure sensor all must be global formation, if adopt a minute body formed structure, then need to design other protection; the structures such as restriction.
Summary of the invention
The purpose of this invention is to provide a kind of cantilever beam sensor construction, the all-in-one-piece brace summer that solves the prior art employing is inverted trapezoidal, its stress tolerance range less, and stress distribution is uneven, is easy to produce the problem that stress is concentrated.
The objective of the invention is to be achieved through the following technical solutions:
The cantilever beam sensor construction; the brace summer that comprises the bottom; brace summer top is the piezo-resistance layer; the top layer of piezo-resistance layer is passivating film; described brace summer cross section is upright right-angled trapezium; and be provided with a ceiling contour with piezo-resistance layer and passivating film on the top of brace summer; described ceiling and described brace summer are one-body molded; described ceiling is positioned at the outside of piezo-resistance layer; the passivating film that ceiling is used for restriction piezo-resistance layer and piezo-resistance layer surface is displaced sideways; and can protect the side of piezo-resistance layer; and the cross section of brace summer is upright right-angled trapezium, and namely the broadside of right-angled trapezium is positioned at the bottom, and the narrow limit of right-angled trapezium is positioned at top; can make so the suffered pressure in narrow limit, top carry out the dispersion of sector shape, can reduce the stress requirement to the bottom support housing.In fact, adopt the upright trapezoidal or trapezium structure that stands upside down no matter be, the suffered pressure of the part that contacts with the piezo-resistance layer can not reduce, the pressure that namely bear at trapezoidal top in two kinds of set-up modes is identical, difference only is that the pressure that bears the bottom changes, by architecture advances of the present invention, can reduce the stress ability to bear of bottom support housing, improve stability.
Description of drawings
The below is described in further detail the present invention with embodiment with reference to the accompanying drawings.
Fig. 1 is the structure chart of the described cantilever beam sensor construction of the embodiment of the invention.
Embodiment
As shown in Figure 1; cantilever beam sensor construction of the present invention; the brace summer 1 that comprises the bottom; brace summer 1 top is piezo-resistance layer 2; the top layer of piezo-resistance layer 2 is passivating film 3; described brace summer 1 cross section is upright right-angled trapezium; and be provided with a ceiling 4 contour with piezo-resistance layer 2 and passivating film 3 on the top of brace summer 1; described ceiling 4 and described brace summer 1 are one-body molded; described ceiling is positioned at the outside of piezo-resistance layer; the passivating film 3 that ceiling 4 is used for restriction piezo-resistance layer 2 and piezo-resistance layer 2 surface is displaced sideways; and can protect the side of piezo-resistance layer 2; and the cross section of brace summer 1 is upright right-angled trapezium; the broadside that is right-angled trapezium is positioned at the bottom; the narrow limit of right-angled trapezium is positioned at top, can make so the suffered pressure in narrow limit, top carry out the dispersion of sector shape, can reduce the stress requirement to the bottom support housing.In fact, adopt the upright trapezoidal or trapezium structure that stands upside down no matter be, the suffered pressure of the part that contacts with piezo-resistance layer 2 can not reduce, the pressure that namely bear at trapezoidal top in two kinds of set-up modes is identical, difference only is that the pressure that bears the bottom changes, by architecture advances of the present invention, can reduce the stress ability to bear of bottom support housing, improve stability.Ceiling 4 and described brace summer 1 are one-body molded, the protective effect that can further improve like this 1 pair of top of brace summer piezo-resistance layer 2, the stability of raising pressure sensor integral body.
Claims (1)
1. cantilever beam sensor construction; the brace summer that comprises the bottom; brace summer top is the piezo-resistance layer; the top layer of piezo-resistance layer is passivating film; it is characterized in that, described brace summer cross section is upright right-angled trapezium, and is provided with a ceiling contour with piezo-resistance layer and passivating film on the top of brace summer; described ceiling and described brace summer are one-body molded, and described ceiling is positioned at the outside of piezo-resistance layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110253241 CN102359837B (en) | 2011-08-31 | 2011-08-31 | Beam film combined sensor structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110253241 CN102359837B (en) | 2011-08-31 | 2011-08-31 | Beam film combined sensor structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102359837A CN102359837A (en) | 2012-02-22 |
| CN102359837B true CN102359837B (en) | 2013-10-23 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201110253241 Active CN102359837B (en) | 2011-08-31 | 2011-08-31 | Beam film combined sensor structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102359837B (en) |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61206267A (en) * | 1985-03-08 | 1986-09-12 | Aisin Seiki Co Ltd | Semiconductor pressure sensor |
| CA2099640A1 (en) * | 1992-06-24 | 1993-12-25 | Michitomo Iiyama | Superconducting device having a superconducting channel formed of oxide superconductor material and method for manufacturing the same |
| CN1326214C (en) * | 2004-02-20 | 2007-07-11 | 中国科学院上海微***与信息技术研究所 | Manufacturing method of nano-line on semiconductor material |
| US20060286706A1 (en) * | 2005-06-21 | 2006-12-21 | Salian Arvind S | Method of making a substrate contact for a capped MEMS at the package level |
| US8211781B2 (en) * | 2008-11-10 | 2012-07-03 | Stanley Electric Co., Ltd. | Semiconductor manufacturing method |
| JP5299254B2 (en) * | 2009-12-14 | 2013-09-25 | 三菱電機株式会社 | Semiconductor pressure sensor and manufacturing method thereof |
| CN202229864U (en) * | 2011-08-31 | 2012-05-23 | 江苏奥力威传感高科股份有限公司 | Beam-film combined sensor structure |
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2011
- 2011-08-31 CN CN 201110253241 patent/CN102359837B/en active Active
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| Publication number | Publication date |
|---|---|
| CN102359837A (en) | 2012-02-22 |
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