CN102347376A - High-efficiency back passivation structure of silicon solar battery and realizing method thereof - Google Patents
High-efficiency back passivation structure of silicon solar battery and realizing method thereof Download PDFInfo
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- CN102347376A CN102347376A CN2011103024409A CN201110302440A CN102347376A CN 102347376 A CN102347376 A CN 102347376A CN 2011103024409 A CN2011103024409 A CN 2011103024409A CN 201110302440 A CN201110302440 A CN 201110302440A CN 102347376 A CN102347376 A CN 102347376A
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Abstract
The invention discloses a high-efficiency back passivation structure of a silicon solar battery and a realizing method thereof. The back passivation structure comprises a thin-film laminated layer which is plated on a back surface of a P-type silicon substrate processed by etching, dispersing and post-cleaning; the thin-film laminated layer is composed of an aluminum oxide thin film and a silicon nitride thin film; the aluminum oxide thin film is arranged on the back surface of the P-type silicon substrate and the silicon nitride thin film is arranged on a lower surface of the aluminum oxide thin film. The structure provided by the invention has the advantages that: as the aluminum oxide is provided with fixed negative charges, the compound on the back surface of the aluminum oxide thin film can be effectively reduced; the aluminum oxide thin film is provided with the silicon nitride thin film and the silicon nitride is enriched in hydrogen, so that the passivation can be effectively realized; a back passivation can be realized by adopting the laminated layer of the aluminum oxide and silicon nitride thin films so that the compound on the back surface can be further reduced; meanwhile, an open-circuit voltage of the crystal silicon solar battery can be obviously improved; the thin-film laminated layer is used as a back reflector so that the absorption of long-wavelength lights is greatly improved; and the thin-film laminated layer is arranged between a back side metal electrode and the P-type silicon substrate so that the warping degree of the crystal silicon solar battery can be greatly reduced.
Description
Technical field
The present invention relates to a kind of preparation technology of silicon solar cell, especially relate to back of the body passivating structure and its implementation of a kind of high efficiency silicon solar cell.
Background technology
Improving conversion efficiency is two principal elements that need consideration in the solar cell preparation with reducing cost; For present silicon is solar cell; Cost reduces the reduction that mainly still is embodied in silicon wafer thickness; Yet the reduction of silicon wafer thickness will bring the increase of back of the body surface recombination, the increase of angularity and the reduction that longwave optical absorbs, and these all are the urgent problems of solar cell development from now on.
At present, the high efficiency crystal silicon solar energy battery generally adopts the silicon dioxide of thermal oxide growth to realize back of the body passivation, and part high efficiency crystal silicon solar energy battery then adopts silicon nitride and silicon dioxide lamination to realize back of the body passivation.These two kinds back of the body passivation implementation methods all have its defective: first kind of implementation method; Because there is hypersensitivity in the body minority carrier life time to high-temperature technology in the silicon chip; Especially polysilicon chip, therefore the thermal oxide growth technology more than 900 ℃ can cause that the body minority carrier life time obviously fails in the silicon chip; Second kind of implementation method, silicon nitride and silicon dioxide lamination are difficult to solve the angularity problem of crystal silicon solar energy battery.
Summary of the invention
Technical problem to be solved by this invention provides a kind of compound, open circuit voltage of improving battery that can effectively reduce back of the body surface, improve the absorption of longwave optical and reduce back of the body passivating structure and its implementation of high efficiency silicon solar cell of the angularity of battery.
The present invention solves the problems of the technologies described above the technical scheme that is adopted: a kind of back of the body passivating structure of high efficiency silicon solar cell; It is characterized in that comprising plating be located at through making herbs into wool, diffusion and after the lip-deep pellicular cascade of the back of the body of P type silicon substrate after the cleaning; Described pellicular cascade is made up of aluminum oxide film and silicon nitride film; Described aluminum oxide film be arranged at described through making herbs into wool, diffusion and after on the back of the body surface of P type silicon substrate after the cleaning, described silicon nitride film is arranged on the lower surface of described aluminum oxide film.
The thickness of described aluminum oxide film is 20～200nm; The thickness of described silicon nitride film is 80～150nm.
A kind of implementation method of back of the body passivating structure of high efficiency silicon solar cell is characterized in that may further comprise the steps:
1. using plasma strengthens chemical vapor deposition method and establishes the aluminum oxide film that a layer thickness is 20～200nm on the back of the body surface of the P type silicon substrate after making herbs into wool, diffusion and the back cleaning, plating;
2. using plasma enhancing chemical vapor deposition method is plated on the lower surface of aluminum oxide film and is established the silicon nitride film that a layer thickness is 80～150nm again, forms pellicular cascade, realizes back of the body passivation.
The preparation process of described aluminum oxide film is: the plasma enhanced chemical vapor deposition technology that adopts 13.56MHz; Process conditions are: power is 3000W, and vacuum degree is 1.5～1.8 holders, and the high purity oxygen gas flow is 3.7～4.7 liters/minute; The trimethyl aluminium flow is 0.42～0.47 liter/minute; Underlayer temperature is 400～500 ℃, and sedimentation time is decided by the speed of deposition of aluminium oxide film, and the thickness of aluminum oxide film is 20～200nm.
The preparation process of described silicon nitride film is: the plasma enhanced chemical vapor deposition technology that adopts 13.56MHz; Process conditions are: power is 3500W, and vacuum degree is 1.5～1.8 holders, and the high-purity ammon throughput is 3～7 liters/minute; Silane flow rate is 0.42～0.72 liter/minute; Underlayer temperature is 420～480 ℃, and sedimentation time is decided by the speed of cvd nitride silicon thin film, and the thickness of silicon nitride film is 80～150nm.
Compared with prior art; The invention has the advantages that through through making herbs into wool, diffusion and after on the back of the body surface of P type silicon substrate after the cleaning plating establish the pellicular cascade that constitutes by aluminum oxide film and silicon nitride film; Because aluminium oxide has fixing negative electrical charge, therefore the lip-deep aluminum oxide film of the back of the body at P type silicon substrate can effectively reduce the compound of back of the body surface, and silicon nitride film is set on aluminum oxide film; Because silicon nitride is rich in hydrogen; Therefore effectively passivation adopts aluminum oxide film and silicon nitride film lamination to realize the compound of back of the body passivation can further reduction back of the body surface, can improve the open circuit voltage of crystal silicon solar energy battery simultaneously significantly; Aluminum oxide film and silicon nitride film lamination can improve the absorption of longwave optical greatly as back reflector; Aluminum oxide film and silicon nitride film lamination can reduce the angularity of crystal silicon solar energy battery greatly between between back metal electrode and P type silicon substrate, thereby effectively reduce production cost.On the other hand, because the preparation of aluminum oxide film and silicon nitride film need not under high temperature (more than 900 ℃) environment, to carry out, therefore effectively reduce influence to body minority carrier life time in the P type silicon substrate.
Description of drawings
Fig. 1 is the sketch map of back of the body passivating structure of the present invention.
Embodiment
Embodiment describes in further detail the present invention below in conjunction with accompanying drawing.
Embodiment one:
The back of the body passivating structure of a kind of high efficiency silicon solar cell that the present invention proposes; As shown in Figure 1; It comprises plating be located at through making herbs into wool, diffusion and after the lip-deep pellicular cascade 2 of the back of the body of P type silicon substrate 1 after the cleaning; Pellicular cascade 2 is made up of aluminum oxide film 21 and silicon nitride film 22, aluminum oxide film 21 be arranged at through making herbs into wool, diffusion and after on the back of the body surface of P type silicon substrate 1 after the cleaning, silicon nitride film 22 is arranged on the lower surface of aluminum oxide film 21.At this; Can with the Thickness Design of aluminum oxide film 21 20～200nm generally; Can be 80～150nm with the Thickness Design of silicon nitride film 22, in actual process, can determine the thickness of aluminum oxide film 21 and silicon nitride film 22 according to the actual requirements; As can be 100nm with the Thickness Design of aluminum oxide film 21, can with the Thickness Design of silicon nitride film 22 120nm.
At this, making herbs into wool, diffusion and back cleaning adopt common process.
Embodiment two:
Present embodiment is the implementation method of back of the body passivating structure of the high efficiency silicon solar cell of embodiment one, and it mainly may further comprise the steps:
1. using plasma strengthens chemical vapour deposition (CVD) (PECVD, Plasma Enhanced Chemical Vapor Deposition) technology and establishes the aluminum oxide film 21 that a layer thickness is 100nm on the back of the body surface of the P type silicon substrate 1 after making herbs into wool, diffusion and the back cleaning, plating.Concrete preparation process is: the plasma enhanced chemical vapor deposition technology that adopts 13.56MHz; Process conditions are: power is 3000W, and vacuum degree is 1.7 holders, and the high purity oxygen gas flow is 4 liters/minute; The trimethyl aluminium flow is 0.45 liter/minute; Underlayer temperature is 400 ℃, and sedimentation time is decided by the speed of deposition of aluminium oxide film, and the thickness of aluminum oxide film is 100nm.
2. using plasma enhancing chemical vapor deposition method is plated on the lower surface of aluminum oxide film 21 and is established the silicon nitride film 22 that a layer thickness is 120nm again, forms pellicular cascade 2, realizes back of the body passivation.Concrete preparation process is: the plasma enhanced chemical vapor deposition technology that adopts 13.56MHz; Process conditions are: power is 3500W, and vacuum degree is 1.6 holders, and the high-purity ammon throughput is 5 liters/minute; Silane flow rate is 0.7 liter/minute; Underlayer temperature is 450 ℃, and sedimentation time is decided by the speed of cvd nitride silicon thin film, and the thickness of silicon nitride film is 120nm.
Embodiment three:
Present embodiment and embodiment two are basic identical, and difference only is that the detailed process for preparing aluminum oxide film is: adopt the plasma enhanced chemical vapor deposition technology of 13.56MHz, process conditions are: power is 3000W; Vacuum degree is 1.8 holders; The high purity oxygen gas flow is 3.7 liters/minute, and the trimethyl aluminium flow is 0.42 liter/minute, and underlayer temperature is 500 ℃; Sedimentation time is decided by the speed of deposition of aluminium oxide film, and the thickness of aluminum oxide film is 50nm; The detailed process of preparation silicon nitride film is: the plasma enhanced chemical vapor deposition technology that adopts 13.56MHz; Process conditions are: power is 3500W, and vacuum degree is 1.5 holders, and the high-purity ammon throughput is 7 liters/minute; Silane flow rate is 0.45 liter/minute; Underlayer temperature is 425 ℃, and sedimentation time is decided by the speed of cvd nitride silicon thin film, and the thickness of silicon nitride film is 98nm.
Embodiment four:
Present embodiment and embodiment two are basic identical, and difference only is that the detailed process for preparing aluminum oxide film is: adopt the plasma enhanced chemical vapor deposition technology of 13.56MHz, process conditions are: power is 3000W; Vacuum degree is 1.5 holders; The high purity oxygen gas flow is 4.5 liters/minute, and the trimethyl aluminium flow is 0.47 liter/minute, and underlayer temperature is 470 ℃; Sedimentation time is decided by the speed of deposition of aluminium oxide film, and the thickness of aluminum oxide film is 170nm; The detailed process of preparation silicon nitride film is: the plasma enhanced chemical vapor deposition technology that adopts 13.56MHz; Process conditions are: power is 3500W, and vacuum degree is 1.8 holders, and the high-purity ammon throughput is 3.5 liters/minute; Silane flow rate is 0.6 liter/minute; Underlayer temperature is 460 ℃, and sedimentation time is decided by the speed of cvd nitride silicon thin film, and the thickness of silicon nitride film is 140nm.
Embodiment five:
Present embodiment and embodiment two are basic identical, and difference only is that the detailed process for preparing aluminum oxide film is: adopt the plasma enhanced chemical vapor deposition technology of 13.56MHz, process conditions are: power is 3000W; Vacuum degree is the 1.1.6 holder; The high purity oxygen gas flow is 4.2 liters/minute, and the trimethyl aluminium flow is 0.44 liter/minute, and underlayer temperature is 500 ℃; Sedimentation time is decided by the speed of deposition of aluminium oxide film, and the thickness of aluminum oxide film is 150nm; The detailed process of preparation silicon nitride film is: the plasma enhanced chemical vapor deposition technology that adopts 13.56MHz; Process conditions are: power is 3500W, and vacuum degree is 1.5 holders, and the high-purity ammon throughput is 4 liters/minute; Silane flow rate is 0.72 liter/minute; Underlayer temperature is 420 ℃, and sedimentation time is decided by the speed of cvd nitride silicon thin film, and the thickness of silicon nitride film is 80nm.
Claims (5)
1. the back of the body passivating structure of a high efficiency silicon solar cell; It is characterized in that comprising plating be located at through making herbs into wool, diffusion and after the lip-deep pellicular cascade of the back of the body of P type silicon substrate after the cleaning; Described pellicular cascade is made up of aluminum oxide film and silicon nitride film; Described aluminum oxide film be arranged at described through making herbs into wool, diffusion and after on the back of the body surface of P type silicon substrate after the cleaning, described silicon nitride film is arranged on the lower surface of described aluminum oxide film.
2. the back of the body passivating structure of a kind of high efficiency silicon solar cell according to claim 1, the thickness that it is characterized in that described aluminum oxide film is 20～200nm; The thickness of described silicon nitride film is 80～150nm.
3. the implementation method of the back of the body passivating structure of a high efficiency silicon solar cell is characterized in that may further comprise the steps:
1. using plasma strengthens chemical vapor deposition method and establishes the aluminum oxide film that a layer thickness is 20～200nm on the back of the body surface of the P type silicon substrate after making herbs into wool, diffusion and the back cleaning, plating;
2. using plasma enhancing chemical vapor deposition method is plated on the lower surface of aluminum oxide film and is established the silicon nitride film that a layer thickness is 80～150nm again, forms pellicular cascade, realizes back of the body passivation.
4. the implementation method of the back of the body passivating structure of a kind of high efficiency silicon solar cell according to claim 3; The preparation process that it is characterized in that described aluminum oxide film is: the plasma enhanced chemical vapor deposition technology that adopts 13.56MHz; Process conditions are: power is 3000W, and vacuum degree is 1.5～1.8 holders, and the high purity oxygen gas flow is 3.7～4.7 liters/minute; The trimethyl aluminium flow is 0.42～0.47 liter/minute; Underlayer temperature is 400～500 ℃, and sedimentation time is decided by the speed of deposition of aluminium oxide film, and the thickness of aluminum oxide film is 20～200nm.
5. the implementation method of the back of the body passivating structure of a kind of high efficiency silicon solar cell according to claim 4; The preparation process that it is characterized in that described silicon nitride film is: the plasma enhanced chemical vapor deposition technology that adopts 13.56MHz; Process conditions are: power is 3500W, and vacuum degree is 1.5～1.8 holders, and the high-purity ammon throughput is 3～7 liters/minute; Silane flow rate is 0.42～0.72 liter/minute; Underlayer temperature is 420～480 ℃, and sedimentation time is decided by the speed of cvd nitride silicon thin film, and the thickness of silicon nitride film is 80～150nm.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103022256A (en) * | 2012-12-27 | 2013-04-03 | 中利腾晖光伏科技有限公司 | Solar crystalline silicon cell film coating method |
| CN103035770A (en) * | 2012-12-21 | 2013-04-10 | 常州天合光能有限公司 | Back passivated iron-binding capacity (IBC) solar cell structure and preparation method thereof |
| CN104919598A (en) * | 2012-09-24 | 2015-09-16 | 奥普提汀公司 | A method of passivating a silicon substrate for use in a photovoltaic device |
| CN108470800A (en) * | 2018-06-06 | 2018-08-31 | 平煤隆基新能源科技有限公司 | A method of reducing PECVD board TMA consumptions |
| CN114182236A (en) * | 2021-11-25 | 2022-03-15 | 晶澳太阳能有限公司 | Method for detecting abnormity of aluminum oxide coating equipment |
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| US20100032012A1 (en) * | 2006-12-01 | 2010-02-11 | Takayuki Isaka | Solar cell and method of manufacturing the same |
| CN102144303A (en) * | 2008-09-03 | 2011-08-03 | 弗兰霍菲尔运输应用研究公司 | Hetero solar cell and method for producing hetero solar cells |
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| US20090301557A1 (en) * | 2005-03-16 | 2009-12-10 | Interuniversitair Microelektronica Centrum (Imec) Vzw | Method for producing photovoltaic cells and photovoltaic cells obtained by such method |
| US20100032012A1 (en) * | 2006-12-01 | 2010-02-11 | Takayuki Isaka | Solar cell and method of manufacturing the same |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104919598A (en) * | 2012-09-24 | 2015-09-16 | 奥普提汀公司 | A method of passivating a silicon substrate for use in a photovoltaic device |
| CN103035770A (en) * | 2012-12-21 | 2013-04-10 | 常州天合光能有限公司 | Back passivated iron-binding capacity (IBC) solar cell structure and preparation method thereof |
| CN103022256A (en) * | 2012-12-27 | 2013-04-03 | 中利腾晖光伏科技有限公司 | Solar crystalline silicon cell film coating method |
| CN103022256B (en) * | 2012-12-27 | 2015-04-22 | 中利腾晖光伏科技有限公司 | Solar crystalline silicon cell film coating method |
| CN108470800A (en) * | 2018-06-06 | 2018-08-31 | 平煤隆基新能源科技有限公司 | A method of reducing PECVD board TMA consumptions |
| CN114182236A (en) * | 2021-11-25 | 2022-03-15 | 晶澳太阳能有限公司 | Method for detecting abnormity of aluminum oxide coating equipment |
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