CN102332671A - Mid-infrared laser source based on semiconductor seed laser and fiber amplifier - Google Patents
Mid-infrared laser source based on semiconductor seed laser and fiber amplifier Download PDFInfo
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- CN102332671A CN102332671A CN 201110223705 CN201110223705A CN102332671A CN 102332671 A CN102332671 A CN 102332671A CN 201110223705 CN201110223705 CN 201110223705 CN 201110223705 A CN201110223705 A CN 201110223705A CN 102332671 A CN102332671 A CN 102332671A
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Abstract
The invention provides a mid-infrared laser source based on a semiconductor seed laser and a fiber amplifier, and relates to a mid-infrared laser source. According to the invention, a seed laser source, a fiber amplifier, an input mirror of an optical parametric oscillator, a non-linear crystal and an output coupling mirror are provided; the seed laser source is provided with a semiconductor laser device, a coupling optical system and an amplifier isolation system, the semiconductor laser, the coupling optical system and the amplifier isolation system are arranged in order and are coaxial, and spacing among the three is adjustable; the fiber amplifier is provided with a fiber and a semiconductor laser pump source; the input mirror of the optical parametric oscillator, the non-linear crystal and the output coupling mirror are arranged in order and are coaxial, and spacing among the three is adjustable. The invention enables mid-infrared laser output with excellent performance to be obtained, the problem of high efficiency heat radiation of a mid-infrared laser device to be overcome, volume of a whole machine to be reduced and beam quality and conversion efficiency of output laser to be enhanced.
Description
Technical field
The present invention relates to a kind of mid-infrared light source, especially relate to the mid-infrared light source of a kind of based semiconductor seed source and fiber amplifier.
Background technology
Solid state laser, especially all solid state laser are widely used in military affairs, industrial processes and scientific research etc. because of having advantages such as compact conformation, conversion efficiency is high, the life-span is long.As pumping source, is to obtain in 3～5 μ ms red LASER Light Source the most effectively means one of through optical parametric oscillator through the near infrared band all solid state laser.Up to the present; Though middle infrared laser has been obtained certain development; But aspects such as high repetition frequency, high-peak power light source obtain in the mid-infrared light source, pumping source is chosen, middle-infrared band dielectric film The Wide-Band Design, low absorption, high loss control also have many technical problems to need to solve; Especially when obtaining the mid-infrared laser light source through the optical parameter means, the volume of pumping source, efficient, stability, beam quality etc. also have many problems to need to be resolved hurrily: 1) full curing, miniaturization, the lightweight of pumping source; 2) pumping source power level and beam quality guarantee simultaneously; 3) pumping source pulsewidth broad under high repetition frequency, peak power is lower, single pulse energy changes greatly with repetition rate; 4) big, the complex structure of pumping source volume, the refrigeration power consumption is big, need water-cooled etc.([1] Y.Bonetti, andJ.Faist, Quantum cascade lasers entering the mid-infrared.Nature Photonics2009,3:32-34; [2] Ren Guoguang, Huang Yunian is with the military and airliner of laser Infra-Red Disturbance System protection, laser and infrared by 2006,36 (1): 1-6).
Summary of the invention
The object of the present invention is to provide the good mid-infrared laser output of a kind of availability, can solve the high efficiency and heat radiation problem of middle infrared laser, beam quality and the based semiconductor seed source of conversion efficiency and the mid-infrared light source of fiber amplifier that can reduce machine volume, improve output light.
The present invention is provided with the input mirror of seed light source, fiber amplifier, optical parametric oscillator, the nonlinear crystal that is used for frequency translation and output coupling mirror; Said seed light source is provided with semiconductor laser, coupling optical system and amplifier shielding system; Said semiconductor laser, coupling optical system and amplifier shielding system are by putting successively in proper order from left to right; The center of said semiconductor laser, coupling optical system and amplifier shielding system is on the same optical axis, and the spacing between said semiconductor laser, coupling optical system and the amplifier shielding system is adjustable; Said fiber amplifier is provided with optical fiber and diode-end-pumped source; The input mirror of said optical parametric oscillator, the nonlinear crystal that is used for frequency translation and output coupling mirror are by putting successively in proper order from left to right; The center of the input mirror of optical parametric oscillator, the nonlinear crystal that is used for frequency translation and output coupling mirror is in same optical axis, and the input mirror of optical parametric oscillator, the nonlinear crystal that is used for frequency translation and the spacing between the output coupling mirror are adjustable.
Said semiconductor laser is the semiconductor laser of directly output or process optical fiber coupling output, and the wavelength of said semiconductor laser can be 1000～1100nm.
Said semiconductor laser passes through the coupling optical system and the amplifier shielding system of coupling optical system and amplifier shielding system structure, seed light source is injected into efficiently mixes Yb
3+Doubly clad optical fiber or photonic crystal fiber gain media in.
Can be provided with an isolator in the system that said coupling optical system and amplifier shielding system make up,, prevent that the reverberation of amplifier from feeding back in the seed light source, cause the instability of system to guarantee the one way propagation of light.
Said diode-end-pumped source is the diode-end-pumped source of one group of band optical fiber coupling output.Said diode-end-pumped source can be established at least 3.
Said optical fiber can be mixes Yb
3+Doubly clad optical fiber or photonic crystal fiber etc.
The said nonlinear crystal that is used for frequency translation can adopt periodical poled crystal or common non-polarized crystal etc., and the nonlinear crystal left and right sides end face that is used for frequency translation all is coated with the anti-reflection film of pump light.The output coupling mirror left side is coated with the highly reflecting films of pump light, the part transmission film of flashlight, and the right side is coated with the anti-reflection film of flashlight.
The adjustable scope of spacing between said semiconductor laser, coupling optical system and the amplifier shielding system can be 0.5～100mm.
The input mirror of said optical parametric oscillator, the nonlinear crystal that is used for frequency translation and the adjustable scope of the spacing between the output coupling mirror can be 0.5～100mm.
The present invention with emission wavelength at the external modulation semiconductor laser of 1.0～11 μ m seed light source as fiber amplifier; Amplify through one or more levels ytterbium-doped double-clad fiber amplifier; Amplify the basic not change on polarization direction, repetition rate, beam quality of later seed light; The energy of individual pulse is amplified step by step; Obtain the pump light of high repetition frequency, high-energy, single-frequency, linear polarization short pulse at last, and with its pumping source as middle infrared laser, the mode of utilizing nonlinear crystal to pass through optical parametric oscillation obtains the laser output of middle-infrared band.The wavelength of this laser output can be through changing nonlinear crystal working temperature or laterally the nonlinear crystal incoming position wait carry out tuning.This invention combines fiber amplifier and external modulation semiconductor laser first; Can just produce the part that energy amplifies the many amplifying stages of redundant heat on the one hand and realize with fiber amplifier, the characteristics of utilizing the fiber amplifier good heat dissipation are through semiconductor refrigerating or simple conduction cooling; Utilized small-power solid state laser, semiconductor laser further to simplify the structure of seed light source in the advantage aspect volume, the short pulse duration on the other hand, fiber amplifier output light has guaranteed that in the advantage of aspects such as beam quality, stability the rear end can have high conversion rate through the mid-infrared light source that the optical parameter means obtain in non-linear process.Obtain high efficiency mid-infrared laser light source complete machine, do not need water-cooled to reduce the output of volume, optical fiber to have improved beam quality, enlarged range of application and operational environment.
Description of drawings
Fig. 1 is the structural representation of the embodiment of the invention.
Embodiment
Referring to Fig. 1, the embodiment of the invention is provided with the input mirror 8 of seed light source, fiber amplifier, optical parametric oscillator, the nonlinear crystal 9 that is used for frequency translation and output coupling mirror 10; Said seed light source is provided with semiconductor laser 1, coupling optical system 2 and amplifier shielding system 3; Said semiconductor laser 1, coupling optical system 2 and amplifier shielding system 3 are put by order from left to right successively; The center of said semiconductor laser 1, coupling optical system 2 and amplifier shielding system 3 is on the same optical axis, and the spacing between said semiconductor laser 1, coupling optical system 2 and the amplifier shielding system 3 is adjustable; Said fiber amplifier is provided with optical fiber 7 and diode-end-pumped source 4; The input mirror 8 of said optical parametric oscillator, the nonlinear crystal 9 that is used for frequency translation and output coupling mirror 10 are by putting successively in proper order from left to right; The center of the input mirror 8 of optical parametric oscillator, the nonlinear crystal 9 that is used for frequency translation and output coupling mirror 10 is in same optical axis, and the input mirror 8 of optical parametric oscillator, the nonlinear crystal 9 that is used for frequency translation and the spacing between the output coupling mirror 10 are adjustable.
Said semiconductor laser 1 is the semiconductor laser of directly output or process optical fiber coupling output; The wavelength of said semiconductor laser can be 1000～1100nm, controls the parameter such as repetition rate, pulse duration, duty ratio of this semiconductor laser through the applying pulse signal.
Said semiconductor laser 1 passes through the coupling optical system and the amplifier shielding system of coupling optical system 2 and amplifier shielding system 3 structures, seed light source is injected into efficiently mixes Yb
3+Doubly clad optical fiber or photonic crystal fiber gain media in.
Can be provided with an isolator in the system of said coupling optical system 2 and amplifier shielding system 3 structures,, prevent that the reverberation of amplifier from feeding back in the seed light source, cause the instability of system to guarantee the one way propagation of light.
Said diode-end-pumped source 4 is diode-end-pumped sources of one group of band optical fiber coupling output; Function is for fiber amplifier pump light to be provided; For the ease of heat radiation, the total pump energy distribution that amplifying stage is required is near the semiconductor laser of the some optical fiber coupling outputs of wavelength 975nm.Said diode-end-pumped source 4 can be established at least 3.Said diode-end-pumped source 4 can be located on the experiment porch that whole system lays; This platform is that whole system provides support effect; Because diode-end-pumped source 4 is one group of diode-end-pumped source of carrying out near the band optical fiber coupling output of temperature controlled wavelength 975nm through semiconductor cooler; Optical fiber has certain length and crooking ability, can under and the situation of intersecting not overlapping with other elements, lay flexibly in the left and right sides of optical fiber amplifying stage; Laying with compact conformation, proper alignment is principle, and mutual alignment relation and distance do not limit.
Said optical fiber 7 can be mixes Yb
3+Doubly clad optical fiber or photonic crystal fiber etc.; With optical fiber 7 as stage gain medium, semiconductor laser as pumping source; Seed light is carried out one or more levels amplification; Through control, the structure optimization design of fiber bending radius are come to suppress respectively high-rder mode and various nonlinear effect; Obtain the polarization retention performance through stress birfringence, obtain high-peak power, linear polarization, short-pulse light source at last.
From the logical optical axis of the optical axis of the light of amplifier shielding system 3 outgoing and optical fiber 7 on same horizontal line; The normal of input mirror 8 left sides of the logical optical axis of optical fiber 7 and optical parametric oscillator is parallel to each other; There is the air gap between the input mirror 8 of amplifier shielding system 3 and optical parametric oscillator and the optical fiber 7; Gap length can be regulated between 0.5～100mm; Diode-end-pumped source 4 is distributed in the left and right sides of optical fiber 7, is connected through fused fiber splice between diode-end-pumped source 4 and the optical fiber 7.The nonlinear crystal 9 that is used for frequency translation can be periodical poled crystal or common non-polarized crystal, and nonlinear crystal 9 left and right sides end faces that are used for frequency translation all are coated with the anti-reflection film of pump light.Output coupling mirror 10 left sides are coated with the highly reflecting films of pump light, the part transmission film of flashlight, and the right side is coated with the anti-reflection film of flashlight.Through single resonance parametric oscillation technology the pulse laser that amplifier amplifies after exporting is injected in the parametric oscillation resonant cavity as pump light; After the pump light pumping is to the nonlinear crystal; Can produce certain gain to flashlight; Through the feedback that chamber, resonant cavity left and right sides mirror provides, flashlight constantly is exaggerated, and final signal light is through outgoing mirror output.The wave band of this flashlight is mainly by the pump light wavelength, and the parameter of nonlinear crystal etc. are common to determine that in the present invention, wavelength is positioned at middle-infrared band.On perpendicular to periodical poled crystal optical direction cross section, make a plurality of periodic structures, the cycle size realizes tuning by certain step change; When pump light incides the different periodic structure of cycle parameter; Output mid-infrared laser centre wavelength is different; Near each centre wavelength, mate and change the signal light wavelength through working temperature, the nonlinear temperature that changes crystal; Realize thermal tuning at last, the flashlight of generation is positioned at the middle-infrared band of 3～5 μ m.
The adjustable scope of spacing between said semiconductor laser 1, coupling optical system 2 and the amplifier shielding system 3 can be 0.5～100mm.
The input mirror 8 of said optical parametric oscillator, be used for the nonlinear crystal 9 of frequency translation and the adjustable scope of spacing between the output coupling mirror 10 can be 0.5～100mm.
Claims (10)
1. the mid-infrared light source of based semiconductor seed source and fiber amplifier is characterized in that being provided with the input mirror of seed light source, fiber amplifier, optical parametric oscillator, the nonlinear crystal that is used for frequency translation and output coupling mirror; Said seed light source is provided with semiconductor laser, coupling optical system and amplifier shielding system; Said semiconductor laser, coupling optical system and amplifier shielding system are by putting successively in proper order from left to right; The center of said semiconductor laser, coupling optical system and amplifier shielding system is on the same optical axis, and the spacing between said semiconductor laser, coupling optical system and the amplifier shielding system is adjustable; Said fiber amplifier is provided with optical fiber and diode-end-pumped source; The input mirror of said optical parametric oscillator, the nonlinear crystal that is used for frequency translation and output coupling mirror are by putting successively in proper order from left to right; The center of the input mirror of optical parametric oscillator, the nonlinear crystal that is used for frequency translation and output coupling mirror is in same optical axis, and the input mirror of optical parametric oscillator, the nonlinear crystal that is used for frequency translation and the spacing between the output coupling mirror are adjustable.
2. the mid-infrared light source of a kind of based semiconductor seed source as claimed in claim 1 and fiber amplifier; It is characterized in that the semiconductor laser of said semiconductor laser for direct output or process optical fiber coupling output, the wavelength of said semiconductor laser is 1000～1100nm.
3. the mid-infrared light source of a kind of based semiconductor seed source as claimed in claim 1 and fiber amplifier; It is characterized in that coupling optical system and amplifier shielding system that said semiconductor laser makes up through coupling optical system and amplifier shielding system, seed light source is injected into efficiently mixes Yb
3+Doubly clad optical fiber or photonic crystal fiber gain media in.
4. the mid-infrared light source of a kind of based semiconductor seed source as claimed in claim 1 and fiber amplifier is characterized in that being provided with an isolator in the system that said coupling optical system and amplifier shielding system make up.
5. the mid-infrared light source of a kind of based semiconductor seed source as claimed in claim 1 and fiber amplifier is characterized in that said diode-end-pumped source is the diode-end-pumped source of one group of band optical fiber coupling output; Said diode-end-pumped source is established at least 3.
6. the mid-infrared light source of a kind of based semiconductor seed source as claimed in claim 1 and fiber amplifier is characterized in that said optical fiber is for mixing Yb
3+Doubly clad optical fiber or photonic crystal fiber.
7. the mid-infrared light source of a kind of based semiconductor seed source as claimed in claim 1 and fiber amplifier; It is characterized in that the said nonlinear crystal that is used for frequency translation adopts periodical poled crystal or common non-polarized crystal, the nonlinear crystal left and right sides end face that is used for frequency translation all is coated with the anti-reflection film of pump light.
8. the mid-infrared light source of a kind of based semiconductor seed source as claimed in claim 1 and fiber amplifier is characterized in that the output coupling mirror left side is coated with the highly reflecting films of pump light, the part transmission film of flashlight, and the right side is coated with the anti-reflection film of flashlight.
9. the mid-infrared light source of a kind of based semiconductor seed source as claimed in claim 1 and fiber amplifier is characterized in that the adjustable scope of spacing between said semiconductor laser, coupling optical system and the amplifier shielding system is 0.5～100mm.
10. the mid-infrared light source of a kind of based semiconductor seed source as claimed in claim 1 and fiber amplifier is characterized in that the input mirror of said optical parametric oscillator, the nonlinear crystal that is used for frequency translation and the adjustable scope of the spacing between the output coupling mirror are 0.5～100mm.
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| CN 201110223705 CN102332671A (en) | 2011-08-05 | 2011-08-05 | Mid-infrared laser source based on semiconductor seed laser and fiber amplifier |
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| CN 201110223705 CN102332671A (en) | 2011-08-05 | 2011-08-05 | Mid-infrared laser source based on semiconductor seed laser and fiber amplifier |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040095579A1 (en) * | 2002-11-19 | 2004-05-20 | Bisson Scott E. | Tunable light source for use in photoacoustic spectrometers |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040095579A1 (en) * | 2002-11-19 | 2004-05-20 | Bisson Scott E. | Tunable light source for use in photoacoustic spectrometers |
Non-Patent Citations (1)
| Title |
|---|
| 《IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS》 20090408 Yonghang Shen等 PPMgLN-Based High-Power Optical Parametric Oscillator Pumped by Yb3+-Doped Fiber Amplifier Incorporates Active Pulse Shaping 385-392 1-10 第15卷, 第2期 * |
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Application publication date: 20120125 |