CN102332460A - Image sensor with insulating buried layer and manufacturing method thereof - Google Patents
Image sensor with insulating buried layer and manufacturing method thereof Download PDFInfo
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- CN102332460A CN102332460A CN201110229907A CN201110229907A CN102332460A CN 102332460 A CN102332460 A CN 102332460A CN 201110229907 A CN201110229907 A CN 201110229907A CN 201110229907 A CN201110229907 A CN 201110229907A CN 102332460 A CN102332460 A CN 102332460A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 34
- 238000002955 isolation Methods 0.000 claims description 26
- 238000009413 insulation Methods 0.000 claims description 25
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 239000002019 doping agent Substances 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
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- 239000000377 silicon dioxide Substances 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
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- 238000002347 injection Methods 0.000 claims description 5
- 239000007924 injection Substances 0.000 claims description 5
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- 230000006911 nucleation Effects 0.000 claims description 4
- 238000010899 nucleation Methods 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 description 14
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- 238000005516 engineering process Methods 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 5
- -1 oxonium ion Chemical class 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
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- 229910052796 boron Inorganic materials 0.000 description 1
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- OGFXBIXJCWAUCH-UHFFFAOYSA-N meso-secoisolariciresinol Natural products C1=2C=C(O)C(OC)=CC=2CC(CO)C(CO)C1C1=CC=C(O)C(OC)=C1 OGFXBIXJCWAUCH-UHFFFAOYSA-N 0.000 description 1
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- 229910010271 silicon carbide Inorganic materials 0.000 description 1
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Abstract
The invention provides an image sensor with an insulating buried layer. The image sensor is formed on the surface of a supporting substrate and comprises a driving circuit region and an optical sensing region, wherein the surface of the supporting substrate at the driving circuit region is provided with a top semiconductor layer; the top semiconductor layer is isolated from the supporting substrate through the insulating buried layer; a transistor in the driving circuit region is formed in the top semiconductor layer; an optical sensing device in the optical sensing region is formed in the supporting substrate and is electrically isolated from the supporting substrate through the insulating isolating layer; and the driving circuit region and the optical sensing region are transversely isolated from each other through an insulating side wall.
Description
Technical field
The invention relates to a kind of imageing sensor that has insulating buried layer and preparation method thereof, particularly a kind of have an anti-high energy particle radianting capacity have imageing sensor of insulating buried layer and preparation method thereof.
Background technology
Imageing sensor is a kind of electronic devices and components that are widely used in digital image-forming, Aero-Space and medical imaging field.(charge coupled device, CCD) (complementary metal oxide semiconductor, CMOS) imageing sensor is two kinds of common imageing sensors to charge coupled device for imageing sensor and complementary metal oxide semiconductors (CMOS).CCD has low readout noise and dark current noise, has high photon conversion efficiency simultaneously, so both improved signal to noise ratio, has and has improved sensitivity, and very low light also can be detected according to the incident light of intensity, and its signal can not covered.In addition, CCD also has HDR, improves the scope of application of system environments; Not because of luminance difference causes the signal contrast phenomenon greatly, but its power consumption is bigger, and service voltage is inconsistent; Do not match with traditional CMOS technology, integrated level is not high, so cost is higher.Compare with CCD, cmos image sensor is all relatively poor relatively to sensitivity, the signal to noise ratio of light, causes it on image quality, to be difficult to contend with CCD, is not very high middle and low-end market so be mainly used in the image quality requirement in the past.But along with the CMOS technology is updated, cmos image sensor also more and more has the strength that contends with CCD aspect image quality.The remarkable advantages of CMOS is that integrated level is high, power consumption is little; Has the condition that height system is integrated; The CMOS chip almost can the function that all images transducer is required be integrated on the chip piece, for example vertical displacement, horizontal displacement register, SECO and analog digital conversion etc., even can picture processing chip, fast flash memory bank etc. be integrated into single-chip; Reduce system complexity greatly, reduced cost.Present trend is exactly that cmos image sensor progressively replaces CCD.
It shown in the accompanying drawing 1A a kind of typical image sensor architecture sketch map in the prior art; Be depicted as a pixel cell; Comprise drive circuit area I and optical sensing zone II; Wherein drive circuit area I is typical 4T type drive circuit, comprises that transfering transistor T1, reset transistor T2, source follow transistor T 3 and row gating switch transistor T 4, and optical sensing zone II comprises a photodiode D1.Above-mentioned each transistor and and photodiode D1 between outer signal and the operation principle of annexation, each port please be in detail with reference in circuit structure shown in the accompanying drawing 1 and the prior art to the introduction of imageing sensor, repeat no more here.
It shown in the accompanying drawing 1B device architecture sketch map of the imageing sensor shown in the accompanying drawing 1A; This sketch map is intended to represent drive circuit area I and optical sensing zone II position relation each other; So wherein except that substrate 100; Only among the II of optical sensing zone, further show first doped region 111 and second doped region 112 of photodiode D1, and drive circuit area I only representes with transfering transistor T1, comprises grid 121, source dopant zone 122, drain doping region territory 123.Between above-mentioned drive circuit area I and two zones of II, optical sensing zone, comprise dielectric isolation structure 130.All omit for the metal connecting line on substrate 100 surface etc. and the structure that the present invention does not have special relationship.
Continuation is with reference to accompanying drawing 1B; First doped region 111, source dopant zone 122 should have identical conduction type with drain doping region territory 123; And with the conductivity type opposite of substrate 100, and second doped region 112 should be identical with the conduction type of substrate, for example for the substrate 100 of N type; First doped region 111, source dopant zone 122 and drain doping region territory 123 should be the P types, and second doped region 112 should be the N type.
For imageing sensor can stably be applied in Aero-Space and other extreme environments, need the sensor further to have the ability of opposing high energy particle radiation.A kind of effective method be with the structure fabrication shown in the accompanying drawing 1B on the SOI substrate.SOI (silicon/semiconductor-on-insulator) refers to the silicon/semiconductor on the insulating barrier, and it is by " top-layer semiconductor/insulating buried layer/support substrates " three layers of formation.Uppermost top-layer semiconductor is used for doing semiconductor device such as CMOS, and middle insulating buried layer is used for isolating device and support substrates.The insulating buried layer that is arranged between top-layer semiconductor and the support substrates can be resisted the high energy particle radiation that a part comes from space outerpace.
It shown in the accompanying drawing 1C a kind of image sensor architecture that has insulating buried layer in the prior art; Simultaneously with reference to accompanying drawing 1B; The said substrate that has the image sensor architecture of insulating buried layer further comprises support substrates 101, insulating buried layer 102 and top-layer semiconductor 103, and all the other structures are all similar with accompanying drawing 1B.Only come from substrate surface because photodiode D1 accepts; So first doped region 111 and second doped region 112 need certain degree of depth to absorb incident light; Have a distance between former transistorized source dopant zone 122 and drain doping region territory 123 certainty and the insulating buried layer 102, promptly drive circuit area I can only be made into the part depletion structure.Obvious this part depletion structure and the dielectric isolation between the II of drive circuit area I and optical sensing zone of being unrealized in case there is high energy particle to pass through drive circuit area I and optical sensing zone II, still can make the inefficacy of imageing sensor generation electricity.
So the shortcoming of prior art is, when with SOI substrate construction drawing image-position sensor, because the silicon film thickness of SOI is thinner, makes light sensitive diode above that and is restricted.Thin silicon fiml has limited light sensitive diode depletion layer thickness, and efficiency of light absorption descends.The thickness that increases silicon fiml then can not be made complete depletion type SOI device, perhaps reduces the radiation resistance of part depletion type device.
Summary of the invention
Technical problem to be solved by this invention is, provide a kind of have an anti-high energy particle radianting capacity have imageing sensor of insulating buried layer and preparation method thereof.
In order to address the above problem; The invention provides a kind of imageing sensor that has insulating buried layer; Said imageing sensor is formed at the support substrates surface; Said imageing sensor comprises drive circuit area and optical sensing zone, and the support substrates surface of drive circuit area has top-layer semiconductor, and top-layer semiconductor is isolated through insulating buried layer and support substrates; Transistor in the drive circuit area is formed in the top-layer semiconductor, and the optical sensor device in the optical sensing zone is formed in the support substrates and passes through dielectric isolation layer and support substrates electric isolation; Said drive circuit area and optical sensing zone are each other through insulation side wall lateral isolation.
As optional technical scheme, the material of said dielectric isolation layer and insulating buried layer is selected from any one in silica, silicon nitride and the silicon oxynitride independently of one another.
The present invention further provides a kind of above-mentioned manufacture method that has the imageing sensor of insulating buried layer; Comprise the steps: to provide support substrate, said support substrates surface has continuous insulating buried layer and continuous top-layer semiconductor successively: top-layer semiconductor and the insulating buried layer of removing the optical sensing zone; In the optical sensing zone of support substrates, form the bottom insulation separator; In the optical sensing zone of support substrates, form the isolated groove around the optical sensing zone, channel bottom is to exposing the bottom insulation separator; In groove, fill dielectric, to form the sidepiece dielectric isolation layer; In the support substrates of crowding around, form optical sensor device by bottom insulation separator and sidepiece dielectric isolation layer; In the top-layer semiconductor of drive circuit area, make transistor.
As optional technical scheme, the step of said formation bottom insulation separator further comprises: the nucleation ion is injected in the optical sensing zone of support substrates: to injection zone annealing, to form the bottom insulation separator.
As optional technical scheme, the step of said formation optical sensor device further comprises: dopant ion is injected in the optical sensing zone to support substrates, forms the conduction type doped layer opposite with support substrates on the support substrates surface.
As optional technical scheme, the material of said support substrates is a monocrystalline silicon, and the material of said bottom insulation separator and sidepiece dielectric isolation layer is selected from any one in silica, silicon nitride and the silicon oxynitride independently of one another.
As optional technical scheme, the top-layer semiconductor and the insulating buried layer in said removal optical sensing zone, and the process using plasma assisted etch process that in support substrates, forms isolated groove.
The invention has the advantages that; The bottom of drive circuit area further is provided with insulating buried layer; Form and be insulated the drive circuit area that medium is crowded around fully; Improved the ability of the anti-high energy particle radiation of drive circuit area, and the dielectric isolation layer of bottom and sidepiece for providing dielectric isolation structure, the optical sensing zone has improved the ability of the anti-high energy particle radiation in optical sensing zone.So it is regional and cause sensor failure with optical sensing that the imageing sensor that has insulating buried layer of said method made can avoid high energy particle to pass through drive circuit area from substrate better.
Description of drawings
It shown in the accompanying drawing 1A electrical block diagram of a kind of typical imageing sensor in the prior art.
It shown in the accompanying drawing 1B device architecture sketch map of the imageing sensor shown in the accompanying drawing 1A.
It shown in the accompanying drawing 1C a kind of image sensor architecture sketch map that has insulating buried layer in the prior art.
It shown in the accompanying drawing 2 the implementation step sketch map of the said method of embodiment of the present invention.
Accompanying drawing 3A is to shown in the accompanying drawing 3G being the process schematic representation of the said method of embodiment of the present invention.
Embodiment
Next combine accompanying drawing to introduce the embodiment of a kind of imageing sensor that has insulating buried layer according to the invention and preparation method thereof in detail.
It shown in the accompanying drawing 2 the implementation step sketch map of this embodiment; Comprise: step S20; Provide support substrate, said support substrates surface has continuous insulating buried layer and continuous top-layer semiconductor: step S21 successively, removes the top-layer semiconductor and the insulating buried layer in optical sensing zone; Step S22 forms the bottom insulation separator in the optical sensing zone of support substrates; Step S23 forms the isolated groove around the optical sensing zone in the optical sensing zone of support substrates, channel bottom is to exposing the bottom insulation separator; Step S24 fills dielectric in groove, to form the sidepiece dielectric isolation layer; Step S25 forms optical sensor device in the support substrates of being crowded around by bottom insulation separator and sidepiece dielectric isolation layer; Step S26 makes transistor in the top-layer semiconductor of drive circuit area.
Accompanying drawing 3A is to shown in the accompanying drawing 3G being the process schematic representation of this embodiment.
Shown in the accompanying drawing 3A, refer step S20 provides support substrate 301, and said support substrates 301 surfaces have continuous insulating buried layer 302 and continuous top-layer semiconductor 303 successively.The material of said support substrates 301 and top-layer semiconductor 302 for example can be a monocrystalline silicon; Also can be germanium silicon, carborundum and various III-V group iii v compound semiconductor materials etc., the material of said insulating buried layer 302 for example can be silica, silicon nitride or silicon oxynitride etc.Said support substrates 301 is divided into drive circuit area I and optical sensing zone II.As its name suggests, drive circuit area I is used to form the drive circuit of being made up of a plurality of transistors (for example MOSFET) in subsequent step, and optical sensing zone II is used to form optical sensor device in subsequent step.
Shown in the accompanying drawing 3B, refer step S21, the top-layer semiconductor 303 and insulating buried layer 302 of removal optical sensing zone II.In order to obtain steep sidepiece, this step is removed the optimal process using plasma assisted etch process of top-layer semiconductor 303 and insulating buried layer 302.
Shown in the accompanying drawing 3C, refer step S22 forms bottom insulation separator 311 in the II of the optical sensing zone of support substrates 301.The means that this step can adopt ion to inject are injected into support substrates 301 with the nucleation ion and form bottom insulation separator 311.With the material of support substrates 301 for being that monocrystalline silicon is example; The mixing that can select oxonium ion, nitrogen ion or above-mentioned two kinds of ions is as the nucleation ion; The energy range that ion injects is 500KeV to 1800KeV; The thickness of bottom insulation separator 311 is 10 to 200nm, for choosing the execution mode of other materials as support substrates 301, can select suitable injection ion according to actual conditions.
Shown in the accompanying drawing 3D, refer step S23 forms the isolated groove 330 around optical sensing zone II in the II of the optical sensing zone of support substrates 301, and the bottom of groove 330 is to exposing bottom insulation separator 311.In order to obtain steep sidepiece, this forms the optimal process using plasma assisted etch process of groove 330.The bottom of groove 330 is to exposing bottom insulation separator 311, is intended to form be insulated the optical sensing zone II that medium is crowded around fully, improved the ability of the anti-high energy particle radiation of optical sensing zone II.
Shown in the accompanying drawing 3E, refer step S24 fills dielectric in groove 330, to form sidepiece dielectric isolation layer 312.The material of sidepiece dielectric isolation layer 312 is selected from any one in silica, silicon nitride and the silicon oxynitride, and the technology that forms above-mentioned material can adopt technologies such as vapour deposition.After above-mentioned bottom insulation separator 311 and sidepiece dielectric isolation layer 312 form, carry out high-temperature annealing process, the separator ion of injection is combined with backing material 301 better, form the final insulation layer material, and reach the final degree of depth.
Shown in the accompanying drawing 3F, refer step S25 forms optical sensor device in the support substrates 301 of being crowded around by bottom insulation separator 311 and sidepiece dielectric isolation layer 312.Accompanying drawing 3F is that example is narrated with photodiode 390.In this embodiment; Forming photodiode 390 steps further comprises: in by support substrates 301, inject first dopant ion; In support substrates 301, form first doped region 391 with first conduction type: second dopant ion is injected in the subregion in first doped region 391, forms second doped region 392 with second conduction type.Said first dopant ion for example can be a phosphonium ion, and the injection energy range is 100KeV to 400KeV, and dosage range is 1.0 * 10
12Cm
-2To 2.0 * 10
13Cm
-2, the conduction type of formed first doped region 391 is the N type; Said second dopant ion is the boron ion, and the energy range that ion injects is 5Kev to 15Kev, and dosage range is 1.0 * 10
15To 3.0 * 10
16Cm
-2, the conduction type of formed second doped region 392 is the P type.The main composition structure of said photodiode 390 i.e. PN junction for being made up of first doped region 391 and second doped region 392.In other embodiments, also can adopt other light-sensitive devices such as phototriode to replace photodiodes 390 as optical sensor device.
Shown in the accompanying drawing 3G, refer step S26 makes transistor in the top-layer semiconductor 303 of drive circuit area I.Accompanying drawing 3G is intended to represent drive circuit area I and optical sensing zone II position relation each other, so only only regional 122 with a certain transistorized grid 121, source dopant at drive circuit area I, drain doping region territory 123 is represented.The number of actual transistor and position each other and annexation please refer to the circuit diagram shown in the accompanying drawing 1A in the prior art among the drive circuit area I; This circuit diagram is a typical 4T type drive circuit; In other execution mode, drive circuit area I also can be set to other forms of drive circuits such as 3T type.
After above-mentioned steps is implemented to finish; Also should continue to form dielectric layer and metal connecting line on the surface of drive circuit area I and optical sensing zone II; The electricity of making between the device connects and extraction electrode, and above-mentioned each step all can adopt technology common in this area, repeats no more here.
From accompanying drawing 3G, can find out; The bottom of drive circuit area I further is provided with insulating buried layer 302; Form and be insulated the drive circuit area I that medium is crowded around fully; Improved the ability of the anti-high energy particle radiation of drive circuit area I, and the dielectric isolation layer of bottom and sidepiece is that optical sensing zone II provides dielectric isolation structure, improved the ability of the anti-high energy particle radiation of optical sensing zone II.So the imageing sensor that has insulating buried layer of said method made can have been avoided high energy particle to pass through drive circuit area I from substrate better and cause sensor failure with the regional II of optical sensing.
In sum; Though the present invention discloses as above with preferred embodiment; Right its is not in order to limit the present invention, to have common knowledge the knowledgeable in the technical field under the present invention, not break away from the spirit and scope of the present invention; When can doing various changes and retouching, so protection scope of the present invention is as the criterion when looking the claim person of defining that claims apply for.
Claims (7)
1. imageing sensor that has insulating buried layer, said imageing sensor is formed at the support substrates surface, and said imageing sensor comprises drive circuit area and optical sensing zone, it is characterized in that:
The support substrates surface of drive circuit area has top-layer semiconductor, and top-layer semiconductor is isolated through insulating buried layer and support substrates;
Transistor in the drive circuit area is formed in the top-layer semiconductor, and the optical sensor device in the optical sensing zone is formed in the support substrates and passes through dielectric isolation layer and support substrates electric isolation;
Said drive circuit area and optical sensing zone are each other through insulation side wall lateral isolation.
2. the imageing sensor that has insulating buried layer according to claim 1 is characterized in that the material of said dielectric isolation layer and insulating buried layer is selected from any one in silica, silicon nitride and the silicon oxynitride independently of one another.
3. the said manufacture method that has the imageing sensor of insulating buried layer of claim 1 is characterized in that, comprises the steps:
Provide support substrate, said support substrates surface has continuous insulating buried layer and continuous top-layer semiconductor successively:
Remove the top-layer semiconductor and the insulating buried layer in optical sensing zone;
In the optical sensing zone of support substrates, form the bottom insulation separator;
In the optical sensing zone of support substrates, form the isolated groove around the optical sensing zone, channel bottom is to exposing the bottom insulation separator;
In groove, fill dielectric, to form the sidepiece dielectric isolation layer;
In the support substrates of crowding around, form optical sensor device by bottom insulation separator and sidepiece dielectric isolation layer;
In the top-layer semiconductor of drive circuit area, make transistor.
4. method according to claim 3 is characterized in that, the step of said formation bottom insulation separator further comprises: the nucleation ion is injected in the optical sensing zone of support substrates: to injection zone annealing, to form the bottom insulation separator.
5. method according to claim 3; It is characterized in that; The step of said formation optical sensor device further comprises: dopant ion is injected in the optical sensing zone to support substrates, forms the conduction type doped layer opposite with support substrates on the support substrates surface.
6. method according to claim 3; It is characterized in that; The material of said support substrates is a monocrystalline silicon, and the material of said bottom insulation separator and sidepiece dielectric isolation layer is selected from any one in silica, silicon nitride and the silicon oxynitride independently of one another.
7. method according to claim 3 is characterized in that, the top-layer semiconductor and the insulating buried layer in said removal optical sensing zone, and the process using plasma assisted etch process that in support substrates, forms isolated groove.
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| CN201110229907A CN102332460B (en) | 2011-08-11 | 2011-08-11 | Image sensor with insulating buried layer and manufacturing method thereof |
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| CN102544045A (en) * | 2012-02-01 | 2012-07-04 | 上海中科高等研究院 | Image sensor with insulated buried layer and preparation method thereof |
| CN108461514A (en) * | 2018-03-28 | 2018-08-28 | 德淮半导体有限公司 | The isolation structure and forming method thereof of CMOS image sensors |
| CN116895671A (en) * | 2023-09-11 | 2023-10-17 | 粤芯半导体技术股份有限公司 | Pixel isolation structure, preparation method thereof and image sensor |
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| CN101740597A (en) * | 2008-11-21 | 2010-06-16 | 索尼株式会社 | Solid-state imaging device, method for manufacturing solid-state imaging device and imaging apparatus |
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| CN102544045A (en) * | 2012-02-01 | 2012-07-04 | 上海中科高等研究院 | Image sensor with insulated buried layer and preparation method thereof |
| CN102544045B (en) * | 2012-02-01 | 2014-04-16 | 中国科学院上海高等研究院 | Image sensor with insulated buried layer and preparation method thereof |
| CN108461514A (en) * | 2018-03-28 | 2018-08-28 | 德淮半导体有限公司 | The isolation structure and forming method thereof of CMOS image sensors |
| CN116895671A (en) * | 2023-09-11 | 2023-10-17 | 粤芯半导体技术股份有限公司 | Pixel isolation structure, preparation method thereof and image sensor |
| CN116895671B (en) * | 2023-09-11 | 2023-12-12 | 粤芯半导体技术股份有限公司 | Pixel isolation structure, preparation method thereof and image sensor |
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| CN102332460B (en) | 2012-10-24 |
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