CN102332450B - Packaging structure of high-power semiconductor element module - Google Patents
Packaging structure of high-power semiconductor element module Download PDFInfo
- Publication number
- CN102332450B CN102332450B CN201110284705.7A CN201110284705A CN102332450B CN 102332450 B CN102332450 B CN 102332450B CN 201110284705 A CN201110284705 A CN 201110284705A CN 102332450 B CN102332450 B CN 102332450B
- Authority
- CN
- China
- Prior art keywords
- sheet metal
- semiconductor element
- power semiconductor
- packaging structure
- element module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Abstract
The invention provides a packaging structure of a high-power semiconductor element module, comprising a substrate and metal sheets which are glued with the substrate by a sealing glue, wherein each metal sheet is provided with a through hole and divided into upper and lower conductive blocks by a separation channel; through hole walls corresponding to the upper and lower conductive blocks are respectively provided with metal convex parts which are arranged along the through hole walls and used for welding spots and bonding wires; and the undersurfaces of the convex parts are aligned at the undersurfaces o the metal sheets and the top surfaces of the convex parts are lower than the top surfaces of the metal sheets. The packaging structures are sealed completely, can be used to pack outdoor and indoor light products, can be used in worse spaces or water environments, and are more convenient and practical.
Description
Technical field
The present invention relates to component encapsulation field, more particularly refer to a kind of packaging structure of high-power semiconductor element module.
Background technology
Along with the continuous progress of science, semiconductor element has obtained fast development, simultaneously corresponding semiconductor component packing technology also fast-developing, but that the form of encapsulating structure is but come is complicated.
At present packaging structure of high-power semiconductor element module adopts ceramic substrate mostly as high-power LED encapsulation structure; the mode of enclosing glue on ceramic substrate crosses the fixed range of phosphor gel or adds fluorescent material film or make it form desired lens shape by pressing mold mode; but its phosphor gel of this encapsulating structure is not protected; easily water suction gas, salt and etchant gas; as materials such as Cl2, H2S, NH3, SO2; easily make that silica gel is aging, phosphor gel or metal variable color, make LED brightness decay.
Existing ceramic substrate is made circuit with sheet, has encapsulated and has cut into die element again, although can volume production operation, but the application that it is follow-up, pad only with surface or the back side of ceramic substrate, be located at the back side simultaneously and need to realize by the mode of perforation, use very inconvenience.
Summary of the invention
A kind of packaging structure of high-power semiconductor element module provided by the invention, its object is to overcome the comparatively complicated shortcoming of encapsulating structure of existing high power semiconductor component module, particularly high-power LED encapsulation structure easily make that silica gel is aging, phosphor gel and metal variable color, make the shortcoming of LED brightness decay.
The technical solution used in the present invention is as follows:
A kind of packaging structure of high-power semiconductor element module, it is characterized in that: the sheet metal that comprises substrate and glue together by insulating cement with substrate, the middle part of this sheet metal is provided with the through hole of impenetrating thickness direction, and by the divider passages that runs through through hole, described sheet metal is divided into upper and lower two conducting blocks, the through-hole wall lower edge that upper and lower two conducting blocks are corresponding is respectively equipped with along through-hole wall and lays and for the metal tabs of solder joint, bonding wire, align with the bottom surface of sheet metal in the bottom surface of this protuberance, the end face of this protuberance is lower than the end face of sheet metal; The planar base surface of upper and lower conducting block is close on the substrate top surface that is all burnishing surface by insulating cement, and the profile of upper and lower conducting block is suitable with the contour substrate of corresponding portion respectively.
Described sheet metal end face is provided with welding conduction region, and sheet metal end face is provided with insulating barrier in all the other positions except welding conduction region.
Described sheet metal end face is provided with welding conduction region, and sheet metal end face all the other positions except welding conduction region are provided with this insulating barrier of insulating barrier and cover above-mentioned divider passages.
Described insulating barrier is insulation enamelled coating.
The thickness of described sheet metal is 0.3mm-1.2mm, and the top-down thickness of described protuberance is 0.1mm-0.5mm.
Described substrate is potsherd, sheet metal or sheet glass.
Described sheet metal end face gummed one encapsulation transparent panel, this transparent panel is flat glass sheet or lens glass sheet.
Described through hole is manhole, and described two protuberances are about the center of circle symmetry of manhole.
Described sheet metal is copper or aluminum metal film, and this sheet metal surface is coated with nickel or silver.
Described protuberance and sheet metal are one-body molded.
Known by the above-mentioned description of this invention, compare with existing technology, the invention has the advantages that:
1, due to this packaging structure of high-power semiconductor element module, adopt sheet metal as support, and and base plate bonding, because sheet metal end face is higher, be beneficial to the coating of fluorescent glue, be also beneficial to transparent panel (as flat glass sheet, lens glass sheet) and glue together with it simultaneously, finish hermetically sealed, encapsulation retains the high transparent liquid (as silicon oil, liquid crystal etc.) of hole injection thus again, then is sealed (common liquid crystal panel LCD technique), can complete the waterproof encapsulation structure of sealing completely.
2, this encapsulating structure can be coated with phosphor gel at the inner face of the flat glass sheet of encapsulation or lens glass sheet, then does and glue together sealing completely, can control required white light colour temperature and color rendering (CRI).
3, sheet metal as support the structure in conjunction with substrate, can be used for present standard packaging technique, volume production is convenient, and follow-up application pad can, in the surface of substrate and side, as connection line, facilitate the connection of application end.
4, this packaging structure of high-power semiconductor element module, is sealing completely, in the space use of applicable indoor and outdoor lighting product or poor environment or water, uses, convenient and practical.
5, this packaging structure of high-power semiconductor element module not only can be for the encapsulation of white light LEDs, also can be used for the encapsulation of visible LED, ultraviolet leds, infrared LEDs, simultaneously also can be for the encapsulation of encapsulation, high power semi-conductor chip and the module thereof of the encapsulation of sensing element, various matrix circuit (IC), available metal sheet gummed covers or the potsherd of available high heat conduction covers, and the outside available metal plated film of potsherd does the isolation use of frequency.
Brief description of the drawings
Fig. 1 is the structural representation of embodiment mono-;
Fig. 2 is the structural representation along A-A direction in Fig. 1;
Fig. 3 is another structural representation of embodiment mono-;
Fig. 4 is the structural representation of embodiment bis-;
Fig. 5 is another structural representation of embodiment bis-.
Embodiment
Embodiment mono-
With reference to figure 1, Fig. 2, a kind of packaging structure of high-power semiconductor element module, the sheet metal 3 that comprises substrate 1 and glue together by insulating cement 2 with substrate 1, this sheet metal 3 is provided with manhole 41 and passes through divider passages 42, 43 are divided into sheet metal 3, lower two conducting blocks 31, 32, the through-hole wall of upper conducting block 31 correspondences is provided with along through-hole wall laying and for solder joint, the metal tabs 311 of bonding wire, the through-hole wall of these lower conducting block 32 correspondences is provided with along through-hole wall laying and for solder joint, the metal tabs 321 of bonding wire, protuberance 311 and protuberance 321 are about the center of circle symmetry of manhole 41, all align with the bottom surface of sheet metal 3 in the bottom surface of protuberance 311 and protuberance 321, the end face of protuberance 311 and protuberance 321 is lower than the end face of sheet metal 3, protuberance 311 is one-body molded with upper conducting block 31, protuberance 321 is one-body molded with lower conducting block 32.The planar base surface of upper and lower conducting block 31,32 is close on substrate 1 end face that is all burnishing surface by insulating cement, and the profile of upper and lower conducting block 31,32 is suitable with substrate 1 profile of corresponding portion respectively.
With reference to figure 1, Fig. 2, upper conducting block 31 end faces are provided with welding conduction region 312, and lower conducting block 32 end faces are provided with welding conduction region 322, and sheet metal 3 end faces are except welding conduction region 312,322, all the other positions are provided with insulation enamelled coating 5, and sheet metal 3 end faces glue together a packaged glass sheet 6.
The thickness of sheet metal 3 is 0.3mm-1.2mm, and protuberance 311,321 top-down thickness are 0.1mm-0.5mm.
Aforesaid substrate 1 is potsherd, sheet metal or sheet glass.Above-mentioned sheet metal 3 is the sheet metal of copper or aluminum, and this sheet metal surface is coated with the table such as nickel, silver material, is beneficial to reflective and sealing wire use, and above-mentioned sheet glass 6 can adopt flat glass sheet or lens glass sheet.
A kind of encapsulation process of packaging structure of high-power semiconductor element module is as follows: with reference to figure 1, Fig. 2, sheet metal 3 and substrate 1 are glued together, chip 7 is put in through hole 41 and is fixed, protuberance 311,321 can be for two pads such as chips welding or lead-in wire point simultaneously, with fluorescent arogel on time point, and in the reserved welding of sheet metal 3 end faces conduction region 312,322, and coating insulation enamelled coating 5 except other positions of welding conduction region 312,322, and at its surface glue unification packaged glass sheet 6.
Above-mentioned packaging structure of high-power semiconductor element module, can also adopt metallic support and potsherd to do glues together, form the ceramics bracket of platoon, be beneficial to the standard processing procedure of high power semiconductor component module, produce simultaneously and finish the rear size that directly support is cut into packaging structure of high-power semiconductor element module.
In addition to the implementation, with reference to figure 3, divider passages 42,43 can also, in the position bending near sheet metal 3 edges, make fluorescent arogel be difficult for flowing out, more practical.
Embodiment bis-
This embodiment and embodiment mono-are roughly the same, as Fig. 4, shown in Fig. 5, just insulate enamelled coating 5 by divider passages 42, 43 cover, this packaging structure of high-power semiconductor element module is in encapsulation process simultaneously, first sheet metal 3 and substrate 1 are glued together, chip 7 is put in through hole 41 and is fixed, protuberance 311 simultaneously, 321 can be for two pads such as chips welding or lead-in wire point, in the reserved welding of sheet metal 3 end faces conduction region 312, 322, and except welding conduction region 312, insulation enamelled coating 5 is coated in other positions of 322, and the enamelled coating 5 that makes to insulate is by divider passages 42, 43 cover, and at its surface glue unification packaged glass sheet 6, simultaneously in divider passages 42, fluorescent arogel is injected in 43 side.
In addition to the implementation, divider passages 42,43 can also, in the position bending near sheet metal 3 edges, make fluorescent arogel be difficult for flowing out, more practical.
Above are only the specific embodiment of the present invention, but design concept of the present invention is not limited to this, allly utilizes this design to carry out the change of unsubstantiality to this structure, all should belong to the behavior of invading protection range of the present invention.
Claims (9)
1. a packaging structure of high-power semiconductor element module, it is characterized in that: the sheet metal that comprises substrate and glue together by insulating cement with substrate, this sheet metal is the through hole that tabular sheet metal and middle part are provided with impenetrating thickness direction, and by the divider passages that runs through through hole, described sheet metal is divided into, lower two conducting blocks, on, lower through-hole wall lower edge corresponding to two conducting blocks is respectively equipped with along through-hole wall laying and for solder joint, the metal tabs of bonding wire, protuberance is with corresponding upper, lower two conducting blocks are one-body molded, and its bottom surface and upper, the bottom surface alignment of lower two conducting blocks, the end face of protuberance is lower than upper, the end face of lower two conducting blocks, the planar base surface of upper and lower conducting block is close to by insulating cement on the substrate top surface that is all burnishing surface, and the profile of upper and lower conducting block is suitable with the contour substrate of corresponding portion respectively, the base plate bonding face except portion corresponding to through hole and divider passages is glued together covering completely by upper and lower two conducting blocks.
2. a kind of packaging structure of high-power semiconductor element module according to claim 1, is characterized in that: described sheet metal end face is provided with welding conduction region, and sheet metal end face is provided with insulating barrier in all the other positions except welding conduction region.
3. a kind of packaging structure of high-power semiconductor element module according to claim 1, it is characterized in that: described sheet metal end face is provided with welding conduction region, sheet metal end face all the other positions except welding conduction region are provided with this insulating barrier of insulating barrier and cover above-mentioned divider passages.
4. according to a kind of packaging structure of high-power semiconductor element module described in claim 2 or 3, it is characterized in that: described insulating barrier is insulation enamelled coating.
5. according to a kind of packaging structure of high-power semiconductor element module described in claim 2 or 3, it is characterized in that: the thickness of described sheet metal is 0.3mm-1.2mm, the top-down thickness of described protuberance is 0.1mm-0.5mm.
6. according to a kind of packaging structure of high-power semiconductor element module described in claim 2 or 3, it is characterized in that: described substrate is potsherd, sheet metal or sheet glass.
7. according to a kind of packaging structure of high-power semiconductor element module described in claim 2 or 3, it is characterized in that: described sheet metal end face gummed one encapsulation transparent panel, this transparent panel is flat glass sheet or lens glass sheet.
8. according to a kind of packaging structure of high-power semiconductor element module described in claim 2 or 3, it is characterized in that: described through hole is manhole, described two protuberances are about the center of circle symmetry of manhole.
9. a kind of packaging structure of high-power semiconductor element module according to claim 1, is characterized in that: described sheet metal is copper or aluminum metal film, and this sheet metal surface is coated with nickel or silver.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110284705.7A CN102332450B (en) | 2011-09-23 | 2011-09-23 | Packaging structure of high-power semiconductor element module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110284705.7A CN102332450B (en) | 2011-09-23 | 2011-09-23 | Packaging structure of high-power semiconductor element module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102332450A CN102332450A (en) | 2012-01-25 |
| CN102332450B true CN102332450B (en) | 2014-08-27 |
Family
ID=45484169
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110284705.7A Expired - Fee Related CN102332450B (en) | 2011-09-23 | 2011-09-23 | Packaging structure of high-power semiconductor element module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102332450B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102896062A (en) * | 2012-10-26 | 2013-01-30 | 南京航空航天大学 | Atomizing device |
| CN109461720A (en) * | 2018-12-12 | 2019-03-12 | 湖北方晶电子科技有限责任公司 | A kind of power semiconductor patch encapsulating structure |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4009097B2 (en) * | 2001-12-07 | 2007-11-14 | 日立電線株式会社 | LIGHT EMITTING DEVICE, ITS MANUFACTURING METHOD, AND LEAD FRAME USED FOR MANUFACTURING LIGHT EMITTING DEVICE |
| JP2004214380A (en) * | 2002-12-27 | 2004-07-29 | Polyplastics Co | Metal foil for lead frame formation, package for electronic components, its manufacturing method, and surface mounted light emitting component |
| JP2006222271A (en) * | 2005-02-10 | 2006-08-24 | Ngk Spark Plug Co Ltd | Substrate for mounting light-emitting element |
-
2011
- 2011-09-23 CN CN201110284705.7A patent/CN102332450B/en not_active Expired - Fee Related
Non-Patent Citations (2)
| Title |
|---|
| JP特开2004-214380A 2004.07.29 |
| JP特开2006-222271A 2006.08.24 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102332450A (en) | 2012-01-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN203644815U (en) | LED packaging structure | |
| JP2017220661A (en) | Light-emitting diode package structure | |
| CN103840071A (en) | LED lamp bar manufacturing method and LED lamp bar | |
| CN104798214A (en) | Light-emitting device and electronic apparatus including same | |
| CN203760472U (en) | System-level LED packaging device | |
| CN103500787A (en) | Ceramic COB (Chip-on-Board) packaged LED (light-emitting diode) light source with bottom capable of being directly soldered on heat sink | |
| JP2015103806A (en) | Led mounting base module and led light emitting device | |
| CN101958387A (en) | Novel LED light resource module packaging structure | |
| CN102332450B (en) | Packaging structure of high-power semiconductor element module | |
| CN103078049A (en) | COB (Chip On Board) packaged LED (Light Emitting Diode) light source and manufacturing method | |
| CN105023922A (en) | Heat sink structure double-carrier LED drive circuit package and manufacturing method thereof | |
| CN202534686U (en) | COB packaged LED light source module | |
| CN201868473U (en) | Light-emitting diode packaging structure | |
| CN104037302A (en) | LED (light-emitting diode) package assembly | |
| CN203941950U (en) | A kind of LED package assembling | |
| CN103311410A (en) | Integrated LED with high thermal conductivity and high breakdown voltage | |
| CN103390714A (en) | Integral type LED (Light Emitting Diode) encapsulation structure and method | |
| CN109065524A (en) | LED module, flexible filament, light source and LED module manufacturing method | |
| CN104091860B (en) | LED packaging light source and manufacturing process thereof | |
| CN103022327B (en) | LED encapsulation structure and preparation method thereof | |
| CN203179952U (en) | COB packaging LED light source | |
| CN107331756A (en) | A kind of radiator and chip integrative packaging light-source structure | |
| CN203384679U (en) | LED (light-emitting diode) bulb lamp capable of emitting light in all directions | |
| CN207038551U (en) | A kind of radiator and chip integrative packaging light-source structure | |
| CN202855796U (en) | Transparent ceramic white light LED packaging structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20161226 Address after: Haicang District of Xiamen City, Fujian province 361000 in Cang industrial district Fuquan Road No. 11 two building basement Patentee after: Xiamen morning lighting technology Co., Ltd. Address before: The Eastern Jin Huai street Quanzhou Fengze District in Fujian province 362000 billion villa 2 Commercial Street building 8-4D Patentee before: Quanzhou Wonled Lighting Co., Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140827 Termination date: 20190923 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |