CN102324350A - Orientated-growth latticed high-performance carbon nano-tube field emission array - Google Patents
Orientated-growth latticed high-performance carbon nano-tube field emission array Download PDFInfo
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- CN102324350A CN102324350A CN201110224201A CN201110224201A CN102324350A CN 102324350 A CN102324350 A CN 102324350A CN 201110224201 A CN201110224201 A CN 201110224201A CN 201110224201 A CN201110224201 A CN 201110224201A CN 102324350 A CN102324350 A CN 102324350A
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Abstract
The invention discloses an orientated-growth latticed high-performance carbon nano-tube field emission array, which comprises a conductive substrate and latticed orientated carbon nano-tube arrays grown on the substrate, wherein the carbon nano-tube arrays are distributed into a latticed shape and form an integral structure. By the technical scheme, the structural stability of small-size carbon nano-tube arrays is improved, the edge effect of the carbon nano-tube arrays is enhanced, and then a turn-on electric field and a threshold electric field are reduced to improve the emission current density. The orientated-growth latticed high-performance carbon nano-tube field emission array is suitable for field emission devices having high requirements on current emission performance, such as electron sources in an X ray source, a microwave amplifier, a field emission scanning electron microscope and the like.
Description
Technical field
The present invention relates to the preparation method of a kind of field emission component and basic preparation method, especially field-transmitting cathode.
Background technology
CNT is one of main material of an emission research at present, has very bright prospect, and each big scientific research institution is all in positive effort, to realize practical application and the industrialization of CNT in feds in the world.In present CNT and relevant research field thereof, new structure, material and process are still in constantly exploring.Yet on the other hand, existing emissive material, device architecture have all reached tens of kinds more than.For the exploration of the working mechanism of these nano-tube material cold cathodes, for the abundant excavation and the utilization of the potential performance of existing device architecture, still be very important research contents.
In the preparation of high current density feds (for example cold cathode X-ray tube and microwave amplifier); Distributing homogeneity and orientation for CNT emitting cathode array are had relatively high expectations; And the directional carbon nanotube array negative electrode is because of favorable orientation, and the field emission performance excellence has very big application potential.Yet; Research for carbon nano pipe array does not make it obtain practical application widely so far; Still have many weak points to inquire into and to improve, the relation of factors such as its electron emissivity and array structure, kind, pattern still need obtain further clear and definite simultaneously.
Directly the carbon nanotubes grown membrane array contacts firmly with substrate on substrate, is easy to obtain good orientation.Obtain the figure of catalyst through methods such as photoetching, shadow mask mask (Shadow Mask), electron beam lithographies; Adopt the growth of TCVD or PECVD method again; CNT only grows at the position that catalyst is arranged, and can obtain in good order carbon nano pipe array [44] uniformly.At present, because cost is lower, it is wide to be suitable for the substrate scope, and therefore many employing hot gas resemble chemical deposition and prepare directional carbon nanotube array.
Yet, early stage bibliographical information employing hot gas resemble pattern unit in the carbon nano pipe array of chemical deposition preparation diameter greatly about about tens microns.Because the field emission of carbon nano pipe array mainly concentrates on the edge, if therefore in the carbon nano pipe array, the area of pattern unit is too big, has just caused the waste of area.And if element diameter is reduced to several microns, will cause the CNT orientation to have deterioration so.
Summary of the invention
The objective of the invention is: overcome deficiency of the prior art, propose a kind of latticed high-performance carbon nanotube field emission array of oriented growth.Especially improve the structural stability of small-size carbon nanotube array, and the edge effect that strengthens carbon nano pipe array, and reduce with this and to open electric field and threshold field, improve emission.
Technical scheme of the present invention is: a kind of latticed high-performance carbon nanotube field emission array of oriented growth, comprise, and conductive substrates, be grown in suprabasil latticed directional carbon nanotube array.It is characterized by: carbon nano pipe array becomes distributed in grid, is an overall structure.
Conductive substrates can be heavily doped silicon, the glass substrate that is coated with metal electrode, metal substrate etc.
The growing method of directional carbon nanotube array template can resemble meteorological chemical deposition that chemical deposition, plasma strengthen etc. for hot gas.
Its mesh shape can be square, circle, hexagon or the like.Carbon nano pipe array high
degree is 100nm-2 μ m.
The advantage of this array is that edge effect is stronger, and structure is stable, definitely vertical orientated more.
The invention has the beneficial effects as follows: improve the structural stability of small-size carbon nanotube array, and the edge effect that strengthens carbon nano pipe array, and reduce with this and to open electric field and threshold field, improve emission.Be applicable to the feds higher to the current emission performance requirement, for example, the electron source in x-ray source, microwave amplifier, the field emission scanning electron microscope etc.
Description of drawings
Fig. 1 is the hexagonal mesh shape carbon nano pipe array of preparing.
Fig. 2 is the square net shape carbon nano pipe array of preparing.
Fig. 3 is the circular net trellis carbon nano pipe array of preparing.
Specific embodiments
Specify embodiment of the present invention in conjunction with the drawings, above-mentioned operation principle of the present invention and advantage will become clearer, shown in each accompanying drawing.
The structure of described carbon nanotube cathod of the present invention is as shown in Figure 1, and carbon nano pipe array has certain height, and becomes distributed in grid, is an integral body.This structure is compared discrete carbon nano pipe array, has constitutionally stable advantage, and more is prone to realize bigger edge effect.
Elaborate in the face of embodiments of the invention down, present embodiment provided detailed execution mode and process, but the scope that the present invention protected is not limited to following embodiment being to implement under the prerequisite with technical scheme of the present invention.
Embodiment, the preparation process of high-performance grid dress carbon nano pipe array is following:
(1) at first, select for use heavy mixed silicon slices, silicon chip was cleaned two minutes in acetone (acetone) and isopropyl alcohol (IPA) respectively, remove surface organic matter and other impurity, be baked to 180 ℃ and keep two minutes to remove the moisture on surface as substrate.
(2) then at surperficial spin coating (spin-coat) one deck electron beam resist, post bake is 90 seconds under 180 ℃ of temperature.
(3) make photoresist by lithography latticed pattern,, just prepared photoresist mask with pattern through developing.
(4) method through magnetron sputtering is at the surface sputtering catalyst film of sample then, and the catalyst here is made up of double-layer films, below one deck be the Al film, thickness 10nm is the Fe film above, thickness 1nm.
(5) peel off, sample is immersed in the acetone, the photoresist that is not made public is just by acetone solution, and the catalyst layer on photoresist surface comes off automatically.So, sample surfaces just only has been left to have the catalyst film of pattern.
(6) adopt hot gas to resemble the growing oriented CNT of chemical deposition then, just can prepare carbon nano-tube film array with pattern.
Claims (5)
1. the latticed high-performance carbon nanotube field emission array of an oriented growth comprises conductive substrates, is grown in suprabasil latticed directional carbon nanotube array; It is characterized by: carbon nano pipe array becomes distributed in grid, is an overall structure.
2. the latticed high-performance carbon nanotube field emission array carbon nano-tube field emission array of oriented growth as claimed in claim 1, it is characterized in that: conductive substrates can be heavily doped silicon, the glass substrate that is coated with metal electrode, metal substrate etc.
3. the latticed high-performance carbon nanotube field emission array carbon nano-tube field emission array of oriented growth as claimed in claim 1 is characterized in that: the growing method of directional carbon nanotube array template can resemble meteorological chemical deposition that chemical deposition, plasma strengthen etc. for hot gas.
4. the latticed high-performance carbon nanotube field emission array carbon nano-tube field emission array of oriented growth as claimed in claim 1 is characterized in that: its mesh shape can be square, circular, hexagon or the like.
5. the preparation method of the latticed high-performance carbon nanotube field emission array of oriented growth is characterized in that step is following:
(1) at first, select for use heavy mixed silicon slices, silicon chip was cleaned two minutes in acetone (acetone) and isopropyl alcohol (IPA) respectively, remove surface organic matter and other impurity, be baked to 180 ℃ and keep two minutes to remove the moisture on surface as substrate;
(2) then at surperficial spin coating (spin-coat) one deck electron beam resist, post bake is 90 seconds under 180 ℃ of temperature;
(3) make photoresist by lithography latticed pattern,, just prepared photoresist mask with pattern through developing;
(4) method through magnetron sputtering is at the surface sputtering catalyst film of sample then, and the catalyst here is made up of double-layer films, below one deck be the Al film, thickness 10nm is the Fe film above, thickness 1nm;
(5) peel off, sample is immersed in the acetone, the photoresist that is not made public is just by acetone solution, and the catalyst layer on photoresist surface comes off automatically; So, sample surfaces just only has been left to have the catalyst film of pattern;
(6) adopt hot gas to resemble the growing oriented CNT of chemical deposition then, just can prepare carbon nano-tube film array with pattern.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013136299A1 (en) * | 2012-03-16 | 2013-09-19 | Nanox Imaging Limited | Devices having an electron emitting structure |
| CN103833001A (en) * | 2014-01-03 | 2014-06-04 | 南京康众光电科技有限公司 | Growing method for carbon nanotubes growing according to headchute type pattern structure and emitter thereof |
| US9922793B2 (en) | 2012-08-16 | 2018-03-20 | Nanox Imaging Plc | Image capture device |
| US10269527B2 (en) | 2013-11-27 | 2019-04-23 | Nanox Imaging Plc | Electron emitting construct configured with ion bombardment resistant |
| CN110767515A (en) * | 2019-10-21 | 2020-02-07 | 北京师范大学 | Carbon nanotube array bundle with adjustable length-diameter ratio applied to field emission cold cathode and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1585067A (en) * | 2004-06-11 | 2005-02-23 | 华东师范大学 | Preparing method for lattice nanometer carbon base thin-film cold cathode |
| CN1730382A (en) * | 2005-09-02 | 2006-02-08 | 清华大学 | Carbon tube nanometer tube figuring technique |
-
2011
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1585067A (en) * | 2004-06-11 | 2005-02-23 | 华东师范大学 | Preparing method for lattice nanometer carbon base thin-film cold cathode |
| CN1730382A (en) * | 2005-09-02 | 2006-02-08 | 清华大学 | Carbon tube nanometer tube figuring technique |
Non-Patent Citations (1)
| Title |
|---|
| CHI LI,YAN ZHANG等: "High emission current density,vertically aligned carbon nanotube mesh,field emitter array", 《APPLIED PHYSICS LETTERS》, vol. 97, 31 December 2010 (2010-12-31) * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013136299A1 (en) * | 2012-03-16 | 2013-09-19 | Nanox Imaging Limited | Devices having an electron emitting structure |
| US10242836B2 (en) | 2012-03-16 | 2019-03-26 | Nanox Imaging Plc | Devices having an electron emitting structure |
| US9922793B2 (en) | 2012-08-16 | 2018-03-20 | Nanox Imaging Plc | Image capture device |
| US10269527B2 (en) | 2013-11-27 | 2019-04-23 | Nanox Imaging Plc | Electron emitting construct configured with ion bombardment resistant |
| CN103833001A (en) * | 2014-01-03 | 2014-06-04 | 南京康众光电科技有限公司 | Growing method for carbon nanotubes growing according to headchute type pattern structure and emitter thereof |
| CN110767515A (en) * | 2019-10-21 | 2020-02-07 | 北京师范大学 | Carbon nanotube array bundle with adjustable length-diameter ratio applied to field emission cold cathode and preparation method thereof |
| CN110767515B (en) * | 2019-10-21 | 2020-10-27 | 北京师范大学 | Preparation method of carbon nanotube array beam with adjustable length-diameter ratio applied to field emission cold cathode |
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