CN102320556B - Method for constructing netty nano ZnO material strain transducer - Google Patents

Method for constructing netty nano ZnO material strain transducer Download PDF

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CN102320556B
CN102320556B CN201110207486.2A CN201110207486A CN102320556B CN 102320556 B CN102320556 B CN 102320556B CN 201110207486 A CN201110207486 A CN 201110207486A CN 102320556 B CN102320556 B CN 102320556B
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strain transducer
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CN102320556A (en
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张跃
李萍
廖庆亮
张铮
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University of Science and Technology Beijing USTB
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University of Science and Technology Beijing USTB
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Abstract

The invention provides a method for constructing a netty nano ZnO material strain transducer. The process comprises the following specific steps of: at low temperature, preheating for 2-4 hours, carrying out hydro-thermal reaction for 6-8 hours to obtain the required nano ZnO material; and then constructing a net-structure flexible strain transducer by adopting an alcohol dispersing process, a spin coating process and the like, and packaging with a polydimethylsiloxane (PDMS) thin film. Compared with the reported ZnO single structure and the reported ZnO vertical/transverse array structure, the net structure in the invention can be used for overcoming the brittleness of ZnO and the complexity of an electronic device process, and the method provided by the invention can be applied to industrial production. The network nano ZnO material strain transducer has high flexibility, high response to micro vibration and small strain, and can be applied to the fields of production monitoring, environment monitoring and the like.

Description

A kind of construction method of meshed nano ZnO material strain sensor
Technical field
The present invention relates to nano material preparation and semiconductor device processing technology field, relate in particular to a kind of construction method of shape nano ZnO material strain transducer Network Based.
Background technology
Sensor has a lot of important application in scientific research and industrial technology, as light/electrical signal detection, flow rate detection, vibration monitoring and electromagnetic wave signal reception etc.Semi-conducting material with its special electricity, mechanics and optical characteristics by a large amount of structures that is applied to various kinds of sensors (Highly sensitive room temperature sensors based on the UV-LED activation of zinc oxide nanoparticles, < < Sensors and Actuator B:Chemical > >, Vol 134, Issue 2,945-952; Nanoplate field-effect capacitive (bio) chemical sensor array based on SOI structure, < < Procedia Chemistry > >, vol 1, Issue 1,670-673).Take Si semi-conducting material in recent years as basic high-density integration chip is according to More's law high speed development.But along with the reduction of live width, traditional processing technology and basic law are challenged.Take monodimension nanometer material as basic nanoelectronics device is by assemble method from bottom to top, be considered to one of a kind of effective way that can continue More's law.Nano material, due to its crystal structure and size and Effect factor, often has high intensity and toughness, can be used for the manufacture of multiple microdevice, has great application prospect.ZnO is a kind of semi-conducting material with piezoelectric property, can realize mechanical force to the conversion of electric energy; Meanwhile, the intensity of the ZnO nano-wire that diameter is nanoscale increases, and can overcome larger strain, is desirable piezoelectric transducer material.In recent years, research (the Piezoelectric Field Effect Transistor and Nanoforce Sensor Based on a Single ZnO Nanowire that has had many aspects such as nano generator, acoustic detector and piezoelectric field effect transistor based on ZnO nano material, < < Nano Letters > >, 2006.Vol.6, No.12,2768-2772; Power generation with laterally packaged piezoelectric fine wires, < < NATURE NANOTECHNOLOGY > >, 2008, Vol 4,34-39).
Summary of the invention
The construction method that the object of the present invention is to provide the flexible strain transducer of a kind of network-like ZnO nano material can produce deformation under effect of stress, makes electric current that larger variation occur, thereby microvibration and strain are had to very high response sensitivity.Meanwhile, provide a kind of simple process flow that builds flexible strain transducer, wherein the cost of manufacture of device is low, can adapt to the requirement of large-scale industrial production.
A construction method for meshed nano ZnO material strain sensor, main minute following two parts:
The preparation of 1.ZnO nano material:
A) preparation Zn (NO 3) 2, (CH 2) 6the aqueous solution of N4 and PEI (PEI), Zn 2+concentration is 0.05~0.1M, atomic ratio Zn (NO 3) 2: (CH 2) 6n 4=1: the concentration of 1, PEI is 0.003~0.009M.Ultrasonic dispersion 15~30min, mixes precursor liquid.
B) get precursor liquid 50~200ml and contain in beaker, sealing is heated 2~4h, then filtering reacting solution at 80~100 ℃.Filtrate is contained in reactor, heat 6~8h at 80~100 ℃, obtain required ZnO nano material.
2. the structure of meshed nano ZnO material strain sensor:
A) adopt the mixed solution of alcohol and dimethyl polysiloxane that the ZnO nano material obtaining after reaction is dissolved to 0.05~1g/5ml, ultrasonic dispersion 10~30s.
B) adopt spin-coating method that the ZnO after disperseing is evenly distributed on polyimides (PI) film, spin coating 1~5 time, obtains ZnO layer.
C) by the dry 2~10h at 100~180 ℃ of the PI film with ZnO layer, form ZnO network.
D) with elargol, be fixed on ZnO layer two ends, and at 50~100 ℃ dry 30min, make between elargol electrode and ZnO between close contact.
E) use dimethyl silicone polymer (PDMS) film by whole device package, under vacuum condition, 40 ℃ are incubated 0.5~2h, complete the structure of meshed nano ZnO material strain sensor.With dimethyl silicone polymer (PDMS) film, whole device package can be prevented to extraneous pollution and corrosion.
Than the single structure of the ZnO having been reported vertical with ZnO/horizontal array structure, the network-like structure in the present invention has overcome fragility and the technologic complexity of electronic device of ZnO.Adopt hydro-thermal method to prepare at low temperatures ZnO nano material, and adopt the techniques such as spin coating, dispersion to build the flexible strain transducer of the network-like structure of knowing clearly.The manufacture craft of device is simple, highly sensitive, can be used for the detection of microvibration and small strain signal.The invention has the advantages that:
1. the present invention has prepared One-Dimensional ZnO nano material at low temperatures, and is coated in flexible substrates and has been prepared network-like ZnO structure by dispersion, and this structure has overcome the fragility of ZnO, and the working life of nanometer flexible sensor under extraneous stress/vibration increased.
2. the present invention has utilized strong, the highly sensitive advantage of good stability, signal of network-like ZnO nano material, has improved life-span and the sensing characteristics of strain transducer.
Accompanying drawing explanation
Fig. 1 is the stereoscan photograph of network-like ZnO material, therefrom can clearly see ZnO pattern and network-like structure.
Fig. 2 is the built flexible strain transducer I-V indicatrix under tensile stress, therefrom can find out, electric current increases and reduces with tensile stress that device is received.
Fig. 3 is the current-responsive curve that device vibrates to external world, therefrom can find out that device presents good current-responsive under 0.5Hz effect of vibration.
The specific embodiment
Now in conjunction with diagram and example, further illustrate technical scheme of the present invention:
Example one
Preparation Zn (NO 3) 2, (CH 2) 6the aqueous solution of N4 and PEI, Zn 2+concentration is 0.05M, atomic ratio Zn (NO 3) 2: (CH 2) 6n 4=1: the concentration of 1, PEI is 0.007M.Ultrasonic dispersion 30min, mixes precursor liquid.Then, get precursor liquid 100ml and contain in beaker, sealing is heated 2h at 95 ℃, and filtering reacting solution.Filtrate is contained in reactor, heat 6h at 80~100 ℃, obtain required ZnO nano material.
Adopt the mixed solution of alcohol and dimethyl polysiloxane that the ZnO nano material obtaining after reaction is dissolved to 0.2g/5ml, ultrasonic dispersion 20s.Adopt spin-coating method that the ZnO after disperseing is evenly distributed on PI film, spin coating 3 times, obtains ZnO layer.By the dry 5h at 150 ℃ of the PI film with ZnO layer, form ZnO network.With elargol, be fixed on ZnO layer two ends, and at 50 ℃ dry 30min, make between elargol electrode and ZnO between close contact.With PDMS film, by whole device package, under vacuum condition, 40 ℃ of insulation 0.5~2h, prevent extraneous pollution and corrosion etc.Device is accessed to external circuit detection system and can complete units test.
Example two
Preparation Zn (NO 3) 2, (CH 2) 6n 4with the aqueous solution of PEI, Zn 2+concentration is 0.05M, atomic ratio Zn (NO 3) 2: (CH 2) 6n 4=1: the concentration of 1, PEI is 0.009M.Ultrasonic dispersion 30min, mixes precursor liquid.Then, get precursor liquid 100ml and contain in beaker, sealing is heated 2h at 95 ℃, and filtering reacting solution.Filtrate is contained in reactor, heat 6h at 80~100 ℃, obtain required ZnO nano material.
Adopt the mixed solution of alcohol and dimethyl polysiloxane that the ZnO nano material obtaining after reaction is dissolved to 0.1g/5ml, ultrasonic dispersion 20s.Adopt spin-coating method that the ZnO after disperseing is evenly distributed on PI film, spin coating 5 times, obtains ZnO layer.By the dry 5h at 150 ℃ of the PI film with ZnO layer, form ZnO network.With elargol, be fixed on ZnO layer two ends, and at 50 ℃ dry 30min, make between elargol electrode and ZnO between close contact.With PDMS film, by whole device package, under vacuum condition, 40 ℃ of insulation 0.5~2h, prevent extraneous pollution and corrosion etc.Device is accessed to external circuit detection system and can complete units test.

Claims (1)

1. a construction method for meshed nano ZnO material strain sensor, its feature is divided following two parts:
1), the preparation of ZnO nano material:
A) preparation Zn (NO 3) 2, (CH 2) 6n 4with the aqueous solution of PEI abbreviation PEI, Zn 2+concentration is 0.05~0.1M, atomic ratio Zn (NO 3) 2: (CH 2) 6n 4=1: the concentration of 1, PEI is 0.003~0.009M, ultrasonic dispersion 15~30min, mixes precursor liquid;
B) get precursor liquid 50~200ml and contain in beaker, sealing is heated 2~4h at 80~100 ℃, and then filtering reacting solution, contains filtrate in reactor, heats 6~8h at 80~100 ℃, obtains required ZnO nano material;
2), the structure of meshed nano ZnO material strain sensor:
A) adopt the mixed solution of alcohol and dimethyl polysiloxane that the ZnO nano material obtaining after reaction is dissolved to 0.05~1g/5ml, ultrasonic dispersion 10~30s;
B) adopt spin-coating method that the ZnO after disperseing is evenly distributed on Kapton, spin coating 1~5 time, obtains ZnO layer;
C) by the dry 2~10h at 100~180 ℃ of the Kapton with ZnO layer, form ZnO network;
D) with elargol, be fixed on ZnO layer two ends, and at 50~100 ℃ dry 30min, make between elargol electrode and ZnO between close contact;
E) use dimethyl silicone polymer film by whole device package, under vacuum condition, 40 ℃ are incubated 0.5~2h, complete the structure of meshed nano ZnO material strain sensor.
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CN102799063B (en) * 2012-07-20 2013-11-20 北京科技大学 Method for preparing photoresist template and patterned ZnO nanorod array
CN102856196B (en) * 2012-08-23 2017-02-08 北京科技大学 Construction method for piezoelectric field effect transistor based on ZnO nanowire array
CN104613860A (en) * 2015-01-26 2015-05-13 北京科技大学 Flexible wearable paper-based strain sensor and preparation method thereof
CN116023936B (en) * 2022-11-16 2023-11-10 齐鲁工业大学 Preparation method of netlike nano aggregate and application of netlike nano aggregate in photocatalysis field

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