CN102314073A - Photoetching plate and overlaying method thereof - Google Patents
Photoetching plate and overlaying method thereof Download PDFInfo
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- CN102314073A CN102314073A CN2010102160986A CN201010216098A CN102314073A CN 102314073 A CN102314073 A CN 102314073A CN 2010102160986 A CN2010102160986 A CN 2010102160986A CN 201010216098 A CN201010216098 A CN 201010216098A CN 102314073 A CN102314073 A CN 102314073A
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Abstract
The invention provides a photoetching plate, which comprises an overlaying testing pattern area. The photoetching plate is characterized in that the overlaying testing pattern area comprises a chip area, a pair of first register markers and a pair of second register markers, the first register markers are arranged on the periphery of the chip area and are matched with a first multiplying-power photoetching machine for registering, the second register markers are arranged on the periphery of the chip area and are matched with a second multiplying-power photoetching machine for registering, and the multiplying power of the first multiplying-power photoetching machine is higher than the multiplying power of the second multiplying-power photoetching machine. Compared with the prior art, the invention has the beneficial effects that: 1, the testing markers can be placed and data can be collected within the maximum allowable range of the lenses of the photoetching machines so as to actually reflect the edge distortion of the lenses of the photoetching machines and avoid the influence of the size of the actual chip; 2, multiple testing markers can be placed within the whole exposure area to collect sufficient data to test the distortion of the lenses; and 3, only one photoetching plate is adopted, and the influence caused by errors in placement of the overlaying testing pattern on the photoetching plate can be reduced.
Description
Technical field
The present invention relates to a kind of reticle and cover carving method thereof, especially relate to a kind of reticle and cover carving method thereof that different litho machines carry out alignment that be applied to.
Background technology
Litho machine is the key equipment in the photo-mask process produced of present integrated circuit, and mainly containing 2～3 tame manufacturers at present, the projection multiplying power is provided is the scanning step photo-etching machine of 4X and the step photo-etching machine of 5X.
Alignment is an important technical parameter in the photoetching process control, is one of principal element that influences the finished product rate.For satisfying the requirement of alignment precision, must carry out the alignment coupling of litho machine.Yet for the litho machine of same producer, manufacturer generally can provide standard method to mate, but for the litho machine of the different projection multiplying powers of different manufacturers, still not having manufacturer at present provides the matches criteria method.And when practice is handled; General is to analyze/mate through collecting product alignment data, and its major defect is: the alignment measurement markers in the product reticle very little, the data of collection can't truly reflect the distortion of photoetching machine lens; Influence the precision of alignment coupling; In addition, the special flow process of product can exert an influence to substrate and mark, and the data that cause collecting are inaccurate.
As shown in Figure 1, be existing reticle 10, wherein, reticle figure zone mainly comprises two parts: a part is the graphics chip 101 that is positioned at reticle 10 middle sections; Another part be positioned at the reticle both sides to board marker 102,103, like bar code etc.The reticle of different litho machine producer is to board marker the 102, the 103rd, and is different, because to the equal fringe region in the left and right sides of board marker 102,103, so only place specificly for board marker 102,103 on the general reticle 10, supplies the machine at quarter of a certain type to use.Simultaneously, that can not place dissimilar litho machines simultaneously in the left and right sides supplies dissimilar litho machines to use to board marker, for example, when mating for the litho machine of the projection multiplying power of 5X and 4X, mainly is that employing product reticle is mated at present.Promptly use the reticle of 5X and 4X to make public respectively, through on disk, forming the figure of 1X behind the convergent-divergent, the alignment of measuring the mark of overlay matees again.
Several kinds of drawbacks below yet such cover carving method exists:
1. the chip size of common product is not the dimension limit that photoetching machine lens allows, so the data of collecting can not reflect the distortion at photoetching machine lens edge.
2. the alignment test badge can only be placed on the scribe line area of product chips, and the data of collection are limited, does not have enough data to reflect the lens distortion of litho machine.
3. use the reticle of 5X and 4X respectively, therefore had the version of two reticle to go up figure placement effects test data.
Summary of the invention
Deficiency to prior art; The technical matters that the present invention solves provides a kind of reticle and cover carving method thereof; This reticle can be accomplished the litho machine alignment coupling of the different projection multiplying powers of different manufacturers; Only use a kind of reticle to accomplish the exposure on 5X litho machine and the 4X litho machine, reduce of the influence of reticle error the alignment coupling.
The object of the invention is realized through following technical scheme is provided:
A kind of reticle; Comprise alignment resolution chart zone; It is characterized in that: said alignment resolution chart zone comprises that a chip area, a pair of peripheral first multiplying power litho machine that cooperates of said chip area that is arranged at carry out first pair of board marker to version; And a pair of peripheral second multiplying power litho machine that cooperates of chip area that is arranged at carries out second pair of board marker to version, and the wherein said first multiplying power litho machine multiplying power is greater than the said second multiplying power litho machine multiplying power.
Further, said a pair of first pair of board marker is symmetricly set in the left and right sides of said chip area respectively, and said a pair of second pair of board marker is symmetricly set in the both sides up and down of said chip area respectively.
Said first pair of board marker and said second pair of board marker are that initial point is symmetrical set with the center of said reticle.
Again further, the said first multiplying power litho machine figure is housing, and the figure of the said second multiplying power litho machine is inside casing.
The object of the invention can also be realized through following method:
A kind of cover carving method of reticle is characterized in that, may further comprise the steps:
The first,, at least one pair of first pair of board marker and at least one pair of the second pair of board marker that is provided with on the reticle carried out first time make public with the said reticle first multiplying power litho machine of normally packing into;
The second, with reticle revolve turn 90 degrees after, the second multiplying power litho machine of packing into carries out the exposure second time to said at least one pair of first pair of board marker and said at least one pair of second pair of board marker;
Three, the reticle after the exposure for the first time being contracted to the 1X resolution chart is positioned on the disk;
Four, the reticle after the exposure for the second time is contracted to the 1X resolution chart and is positioned on the disk, and with the resolution chart overlay of exposure for the first time;
Five, carry out the measurement of alignment test data and carry out alignment.
Further, the multiplying power of the said first multiplying power litho machine is a, and the multiplying power of the second multiplying power litho machine is b; Wafer test centre of figure coordinate be (x, y), the said relatively reticle center point coordinate of one of said at least one pair of first pair of board marker is (ax; Ay), the said relatively reticle center point coordinate of one of said at least one pair of second pair of board marker be (bx, by); And said (ax is ay) with said (bx is provided with spacing between by).
Compared with prior art, the invention has the beneficial effects as follows:
1. can in the maximum magnitude that photoetching machine lens allows, place test badge and collect data,, do not receive the influence of actual product chip size with the marginal distortion of true reflection photoetching machine lens;
2. can place a plurality of test badges in whole exposure area, can collect the working majority certificate, distort with testing lens;
3. only use a reticle, reduced the influence that alignment resolution chart placement error brings on the reticle.
Description of drawings
Below in conjunction with accompanying drawing the present invention is described further:
Fig. 1 is the alignment resolution chart area schematic of prior art reticle.
Fig. 2 is the alignment resolution chart zone principle schematic of reticle of the present invention.
The 1X that Fig. 3 normally locks up formation for reticle of the present invention is to the board marker synoptic diagram.
Fig. 4 for reticle of the present invention revolve turn 90 degrees lock up formation 1X to the board marker synoptic diagram.
Fig. 5 is the overlay synoptic diagram of Fig. 3 Fig. 4 reticle 1X to board marker.
Fig. 6 is the alignment resolution chart area schematic of best mode for carrying out the invention reticle.
Embodiment
Following with reference to description of drawings preferred forms of the present invention.
As shown in Figure 2, comprise alignment resolution chart zone in reticle 20 of the present invention, said alignment resolution chart zone comprises chip area 201, a pair of first pair of board marker 202,203, and a pair of second pair of board marker 204,205.Said first pair of board marker 202,203 and said second pair of board marker 204,205 all are arranged at the periphery of said chip area 201.This chip area 201 is all to place the alignment resolution chart; And chip area 201 is of a size of the full-size that litho machine allows; And be placed with a pair of first pair of board marker 202,203 in the left and right sides of chip area 201; Be placed with a pair of second pair of board marker 204,205 in both sides up and down, wherein, this first pair of board marker 202,203 and this second pair of board marker the 204, the 205th cooperate different litho machines to carry out version respectively.Preferably, this first pair of board marker 202,203 can cooperate the 5X litho machine, and this second pair of board marker 204,205 can cooperate the 4X litho machine.Like this, can use same reticle 20, can accomplish the exposure on 5X litho machine and 4X litho machine, reduce of the influence of reticle error the alignment coupling.
Wherein, when carrying out registering, earlier, carry out first time and make public the reticle 20 first multiplying power litho machine of normally packing into; Secondly, with same reticle 20 revolve turn 90 degrees after, the second multiplying power litho machine of packing into carries out second time and makes public; Once more, the reticle after the exposure for the first time is contracted to the 1X resolution chart, as shown in Figure 3, the first pair of board marker 202,203 on the reticle 20 lays respectively at the upper left corner and the lower right corner of reticle 20 at this moment; Second pair of board marker 204,205 lays respectively at the upper right corner and the lower left corner of reticle 20, and is positioned on the disk; Once more, the reticle after the exposure for the second time is contracted to the 1X resolution chart, as shown in Figure 4, the first pair of board marker 202,203 on the reticle 20 lays respectively at the lower left corner and the upper right corner of reticle 20 at this moment; Second pair of board marker 204,205 lays respectively at the upper left corner and the lower right corner of reticle 20, and is positioned on the disk and the resolution chart overlay of exposure for the first time.It should be noted that: owing to again during the 1X resolution chart overlay on the disk, be that the resolution chart of zero degree and 90 degree overlaps to form the alignment test badge, as shown in Figure 5, therefore, board marker must be symmetrically distributed on the reticle.Like this, after resolution chart overlay, can carry out alignment to the registering DATA REASONING according to the overlay degree of resolution chart through double exposure.
What deserves to be mentioned is: because of for the 1X resolution chart on the disk, must be that symmetry is placed, so first pair of board marker and second pair of board marker also must be to be the symmetry placement of true origin with reticle 20 centers; Promptly at (x; Y) locate to have placed a pair of board marker, so (x ,-y), (x; Y), (x ,-y) locate also must place to board marker.
In addition, the convergent-divergent multiplying power of supposing litho machine A is a, and the convergent-divergent multiplying power of litho machine B is b; The resolution chart center point coordinate is that (x y), then must correspondingly place two to board marker on reticle 20 on the disk; Its center point coordinate be respectively (ax, ay), (bx, by); And two must keep certain spacing to board marker, must not overlap each other.
Fig. 5 is the 1X resolution chart overlay on disk; And when actual exposure; Cover board marker on the reticle forms on disk through 5X or 4X exposure back convergent-divergent; Therefore, the cover board marker of 5X and 4X is positioned at diverse location on the reticle, just overlaps each other through the 1X resolution chart on disk after the overexposure.As shown in Figure 6, be the alignment resolution chart area schematic of best mode for carrying out the invention reticle.On this reticle 30, be provided with cooperate multiple multiplying power litho machine to board marker; In the present invention; This reticle 30 be provided with to board marker comprise a plurality of cooperation 5X litho machines to board marker 305, a plurality of cooperation 4X litho machines to board marker 304, a plurality of cooperation 3X litho machines to board marker 303, and a plurality of cooperation 2X litho machines to board marker 302.Preferably, cooperate the litho machine of same multiplying power that board marker all is distributed on four angles of reticle 30, and equate apart from the distance at reticle 30 centers.Through the reticle that is provided with like this, can carry out the registering coupling through above-mentioned registering method.Certainly, alignment coupling of the present invention also can be not limited to the litho machine of above multiplying power, and the litho machine of other different projection convergent-divergent multiplying powers also can so mate.
What deserves to be mentioned is: among the present invention is general overlay mark to board marker, and for bar in class bar type, housing is spacing in it, if use positive photoresist, the figure on reticle is a printing opacity; For box in box type, its housing is a blob of viscose, and inside casing is a spacing, if use positive photoresist, the figure of housing on reticle is lighttight zone, and inside casing is a transmission region.In addition, if the figure of litho machine A is housing, then the figure of litho machine B is inside casing, and vice versa.
In addition, figure is placed the influence of deviation to the alignment coupling when making for the elimination reticle, must test housing coordinates on reticle in all, and its deviation is joined final alignment test data.Revolve inside casing or the housing that turn 90 degrees exposure formation for reticle, also must change the reticle coordinate.
Although be the example purpose; Preferred implementation of the present invention is disclosed; But those of ordinary skill in the art will recognize, under the situation that does not break away from disclosed scope of the present invention and spirit by appending claims, various improvement, increase and replacement are possible.
Claims (6)
1. reticle; Comprise alignment resolution chart zone; It is characterized in that: said alignment resolution chart zone comprises that a chip area, a pair of peripheral first multiplying power litho machine that cooperates of said chip area that is arranged at carry out first pair of board marker to version; And a pair of peripheral second multiplying power litho machine that cooperates of chip area that is arranged at carries out second pair of board marker to version, and the wherein said first multiplying power litho machine multiplying power is greater than the said second multiplying power litho machine multiplying power.
2. reticle according to claim 1 is characterized in that: said a pair of first pair of board marker is symmetricly set in the left and right sides of said chip area respectively, and said a pair of second pair of board marker is symmetricly set in the both sides up and down of said chip area respectively.
3. reticle according to claim 2 is characterized in that: said first pair of board marker and said second pair of board marker are that initial point is symmetrical set with the center of said reticle.
4. reticle according to claim 1 is characterized in that: the said first multiplying power litho machine figure is housing, and the figure of the said second multiplying power litho machine is inside casing.
5. the cover carving method of a reticle is characterized in that, may further comprise the steps:
The first,, at least one pair of first pair of board marker and at least one pair of the second pair of board marker that is provided with on the reticle carried out first time make public with the said reticle first multiplying power litho machine of normally packing into;
The second, with reticle revolve turn 90 degrees after, the second multiplying power litho machine of packing into carries out the exposure second time to said at least one pair of first pair of board marker and said at least one pair of second pair of board marker;
Three, the reticle after the exposure for the first time being contracted to the 1X resolution chart is positioned on the disk;
Four, the reticle after the exposure for the second time is contracted to the 1X resolution chart and is positioned on the disk, and with the resolution chart overlay of exposure for the first time;
Five, carry out the measurement of alignment test data and carry out alignment.
6. cover carving method according to claim 5 is characterized in that: the multiplying power of the said first multiplying power litho machine is a, and the multiplying power of the second multiplying power litho machine is b; Wafer test centre of figure coordinate be (x, y), the said relatively reticle center point coordinate of one of said at least one pair of first pair of board marker is (ax; Ay), the said relatively reticle center point coordinate of one of said at least one pair of second pair of board marker be (bx, by); And said (ax is ay) with said (bx is provided with spacing between by).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102160986A CN102314073A (en) | 2010-07-02 | 2010-07-02 | Photoetching plate and overlaying method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102160986A CN102314073A (en) | 2010-07-02 | 2010-07-02 | Photoetching plate and overlaying method thereof |
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| CN102314073A true CN102314073A (en) | 2012-01-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2010102160986A Pending CN102314073A (en) | 2010-07-02 | 2010-07-02 | Photoetching plate and overlaying method thereof |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102944970A (en) * | 2012-11-16 | 2013-02-27 | 京东方科技集团股份有限公司 | Mask alignment method for basal plate |
| CN104423144A (en) * | 2013-08-23 | 2015-03-18 | 上海凸版光掩模有限公司 | Photomask and overlay-accuracy monitoring method of same |
| CN104950582A (en) * | 2014-03-24 | 2015-09-30 | 上海微电子装备有限公司 | Edge exposure system and edge exposure method |
| CN105182681A (en) * | 2015-08-11 | 2015-12-23 | 清华大学深圳研究生院 | Mask plate and method for processing various depth structures on same silicon wafer |
| CN105319834A (en) * | 2014-07-31 | 2016-02-10 | 山东华光光电子有限公司 | Photoetching mask plate with integrated detection marks and application of photoetching mask plate |
| CN105511235A (en) * | 2016-02-15 | 2016-04-20 | 京东方科技集团股份有限公司 | Overlay key, method for forming overlay key and method for measuring overlay precision |
| CN114077170A (en) * | 2020-08-14 | 2022-02-22 | 长鑫存储技术有限公司 | Alignment pattern |
| US11635680B2 (en) | 2020-08-14 | 2023-04-25 | Changxin Memory Technologies, Inc. | Overlay pattern |
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| US20050063030A1 (en) * | 2003-09-22 | 2005-03-24 | Seiko Epson Corporation | Method of hologram exposure, mask for hologram exposure, semiconductor device, and electronic equipment |
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Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102944970B (en) * | 2012-11-16 | 2014-07-02 | 京东方科技集团股份有限公司 | Mask alignment method for basal plate |
| US9057947B2 (en) | 2012-11-16 | 2015-06-16 | Boe Technology Group Co., Ltd. | Method for aligning substrate and mask and method for preparing semiconductor device |
| CN102944970A (en) * | 2012-11-16 | 2013-02-27 | 京东方科技集团股份有限公司 | Mask alignment method for basal plate |
| CN104423144A (en) * | 2013-08-23 | 2015-03-18 | 上海凸版光掩模有限公司 | Photomask and overlay-accuracy monitoring method of same |
| CN104423144B (en) * | 2013-08-23 | 2019-03-19 | 上海凸版光掩模有限公司 | A kind of monitoring method of photomask and photomask alignment precision |
| CN104950582B (en) * | 2014-03-24 | 2017-05-31 | 上海微电子装备有限公司 | A kind of edge exposure system and edge exposure method |
| CN104950582A (en) * | 2014-03-24 | 2015-09-30 | 上海微电子装备有限公司 | Edge exposure system and edge exposure method |
| CN105319834A (en) * | 2014-07-31 | 2016-02-10 | 山东华光光电子有限公司 | Photoetching mask plate with integrated detection marks and application of photoetching mask plate |
| CN105319834B (en) * | 2014-07-31 | 2019-10-25 | 山东华光光电子股份有限公司 | A kind of lithography mask version and its application with integrated detection label |
| CN105182681A (en) * | 2015-08-11 | 2015-12-23 | 清华大学深圳研究生院 | Mask plate and method for processing various depth structures on same silicon wafer |
| CN105511235A (en) * | 2016-02-15 | 2016-04-20 | 京东方科技集团股份有限公司 | Overlay key, method for forming overlay key and method for measuring overlay precision |
| CN105511235B (en) * | 2016-02-15 | 2017-08-08 | 京东方科技集团股份有限公司 | Alignment key mark, the method for forming alignment key calibration method and measurement alignment precision |
| CN114077170A (en) * | 2020-08-14 | 2022-02-22 | 长鑫存储技术有限公司 | Alignment pattern |
| CN114077170B (en) * | 2020-08-14 | 2022-11-18 | 长鑫存储技术有限公司 | Alignment pattern |
| US11635680B2 (en) | 2020-08-14 | 2023-04-25 | Changxin Memory Technologies, Inc. | Overlay pattern |
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Application publication date: 20120111 |