CN102313916A - In-situ preparation method for SiC reflective mirror blank and device - Google Patents
In-situ preparation method for SiC reflective mirror blank and device Download PDFInfo
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- CN102313916A CN102313916A CN2010102187531A CN201010218753A CN102313916A CN 102313916 A CN102313916 A CN 102313916A CN 2010102187531 A CN2010102187531 A CN 2010102187531A CN 201010218753 A CN201010218753 A CN 201010218753A CN 102313916 A CN102313916 A CN 102313916A
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Abstract
The invention discloses an in-situ preparation method for an SiC reflective mirror blank and a device, belonging to the field of preparation of an optical device. The device comprises a numerically controlled processing machine, a multifunctional self-heating mold, a thermal insulation layer, a vacuum pump, a vacuum cover and the like. The preparation method is characterized in that: 1) the C/C multifunctional mold is manufactured by the numerically controlled processing machine during preparation of the mirror blanks; 2) an SiC bisque is sintered in the cavity of the mold via forming reaction; 3) the multifunctional mold is powered up to be heated to increase the temperature for sintering of the bisque in the mold under insulated and vacuum conditions; 4) the C or C/C core mold is removed via oxidation; 5) silicon doping is carried out for sintering of the bisque; and 6) densification is carried by a reflecting surface. When the mirror blank is prepared in the method, the process is simple and reliable; the prepared mirror blank has high structural stiffness; the amount of deformation is low during sintering; the thickness of each wall of the mirror blank is separately controlled according to the optimized design; and no additional vacuum high-temperature furnace is needed for preparation of SiC mirror blanks with different diameters. The method is particularly suitable for preparation of large-diameter (such as 8m) light SiC and C/SiC mirror blanks.
Description
Technical field
The present invention relates to SiC catoptron base in-situ preparation method and device, belong to the optical device preparation field.
Background technology
SiC has been acknowledged as each item performance and all has been bordering on optimum catoptron base material.Existing SiC telescope mirror base, because of receiving the restriction of preparation technology and equipment, mirror base size is done not quite.When mirror base size big (for example greater than 1.5 meters), often the soldering of some little mirror bases is become a big mirror base.And single little mirror base, then mostly is only to adopt to set up stiffening rib on the back surface of Reflector Panel.This is a kind of open architecture that does not have backboard, and the large scale mirror base that the weldering soldering becomes also is still the open architecture of no backboard.This type of open architecture can not be used for the ACTIVE CONTROL optical mirror plane, is difficult for when grinding minute surface solving the support problem, and its specific stiffness is also not too big.
Summary of the invention
The objective of the invention is to find a kind of specific stiffness big, be convenient to support, can be suitable for active optics control requirement, the preparation method and the device of the great diameter SiC catoptron base that need not splice.
The present invention contains Reflector Panel through employing, and the hollow honeycomb sandwich construction pattern of honeycomb sandwich layer and backboard satisfies the requirement that the mirror base is used.
Mirror base in-situ preparation method of the present invention is produced reaction-sintered SiC the goods identical raw material and various sintering process except that adopting with general, and its principal feature is:
1) adopt the C/C material, in preparation place of mirror base, be processed into multi-functional spontaneous heating formwork with digital control processing machinery on the spot, SiC mirror base is from the forming of green body to the sintering, and all original position is accomplished continuously on the mould of formwork composition thus,
2) behind the forming of green body without the demoulding, only cover thermofin around the mould and vacuum (-tight) housing can carry out sintering, need not establish sintering furnace in addition;
3) need not move before biscuit burns till, reduce the chance that is damaged;
4) the biscuit ground sintering that when high temperature, is tied in the more high-strength formwork, its distortion is little;
5) adopt adjustable C or the C/C made core rod of hole.This core rod can help de-watering of slurries when casting molding biscuit; Only can easily remove core behind the mirror base sintering with the heated oxide burning.
Prepare mirror base, simple and reliable process with the present invention; Can prepare the big mirror base of texture ratio rigidity; Little in the sintering process distortion; Each wall thickness of mirror base is prone to control respectively by optimal design; High-temperature vacuum furnace need not be established in addition and various diameter carborundum mirror bases can be prepared.
The present invention is particularly suitable for preparing major diameter (as 8 meters) lightweight SiC, C/SiC mirror base.
Description of drawings
Fig. 1 is this schematic representation of apparatus:
Embodiment
Below be one embodiment of the present of invention: in Fig. 1,1, the digital control processing facility; 2, mirror base; 3, vacuum pump and vacuum (-tight) housing; 4, heat-barrier material; 5, multi-functional spontaneous heating upper shuttering; 6, side form; 7, backplate; 8, core; 9, honeycomb wall; 10, cavity; 11, Reflector Panel; 12, formwork under the multi-functional spontaneous heating.
This catoptron base (2) comprising: with silicon carbide reaction-sintered Reflector Panel (9), honeycomb core (7) and the backplate (5) in fine and close reflection horizon.
This device is by digital control processing facility (1), and multi-functional spontaneous heating is mould [(5)+(6)+(8)+(12)] up and down, thermofin (4), vacuum pump and vacuum (-tight) housing compositions such as (3);
Its preparation method is:
(1) in preparation place of mirror base; By the digital control processing facility in this device make that its profile is identical with the reflecting surface or the back side, physical dimension is greater than the C/C material rectangular plate object of mirror base diameter; Do heater and the uniform temperature body that the sintered sic biscuit is used with this plate object; Double alms bowl body when doing support sintered sic biscuit, the also double simultaneously formwork up and down (5) (12) of making the mould of SiC biscuit;
(2) the charcoal C material or the C/C material of preparation porous are done the hollow core rod (8) and the side form (6) of the Chued drainage branch of honeycomb cavity;
(3) above-mentioned formwork and core rod are formed the mould [(5)+(6)+(8)+(12)] of pouring into a mould mirror voxel base;
(4) slurry of injection reaction-sintered SiC in mold cavity;
(5) mould is applied vibration, mold core cavities is vacuumized, treat that slurry height in the die cavity concentrates after, form the biscuit of mirror body;
(6) around mould, add heat-barrier material (4), add vacuum (-tight) housing (3) again;
(7) under the common constraint of vacuum condition and formwork, core rod and side form, let spontaneous hot body (5) (12) heating power heat up, biscuit is carried out sintering;
(8) after sintering is accomplished, remove upper shuttering (5);
(9) core (8) is heated, run away automatically after letting it be oxidized to carbon dioxide;
(10) on the mirror base, add multiple silica flour, cover upper shuttering (5), attach behind heat insulation material (4) and the vacuum (-tight) housing (3) and heat up again, under high temperature and vacuum condition, sintered body is advanced to mix the silicon processing;
(11) reflecting surface to the mirror base carries out densification with chemical vapour deposition technique (CDV-SiC).
Claims (1)
1.SiC catoptron base in-situ preparation method and device is characterized in that:
This device by:
Digital control processing facility (1), multi-functional spontaneous heating is mould [(5)+(6)+(8)+(12)] up and down, thermofin (4), vacuum pump and vacuum (-tight) housing compositions such as (3);
Its preparation method is:
(1) in preparation place of mirror base; By the digital control processing facility in this device make that its profile is identical with the reflecting surface or the back side, physical dimension is greater than the C/C material rectangular plate object of mirror base diameter; Do heater and the uniform temperature body that the sintered sic biscuit is used with this plate object; Double alms bowl body when doing support sintered sic biscuit, the also double simultaneously formwork up and down (5) (12) of making the mould of SiC biscuit;
(2) the charcoal C material or the C/C material of preparation porous are done the hollow core rod (8) and the side form (6) of the Chued drainage branch of honeycomb cavity;
(3) above-mentioned formwork and core rod are formed the mould [(5)+(6)+(8)+(12)] of pouring into a mould mirror voxel base;
(4) slurry of injection reaction-sintered SiC in mold cavity;
(5) mould is applied vibration, mold core cavities is vacuumized, treat that slurry height in the die cavity concentrates after, form the biscuit of mirror body;
(6) around mould, add heat-barrier material (4), add vacuum (-tight) housing (3) again;
(7) under the common constraint of vacuum condition and formwork, core rod and side form, let spontaneous hot body (5) (12) heating power heat up, biscuit is carried out sintering;
(8) after sintering is accomplished, remove upper shuttering (5);
(9) core (8) is heated, run away automatically after letting it be oxidized to carbon dioxide;
(10) on the mirror base, add multiple silica flour, cover upper shuttering (5), attach behind heat insulation material (4) and the vacuum (-tight) housing (3) and heat up again, under high temperature and vacuum condition, sintered body is advanced to mix the silicon processing;
(11) reflecting surface to the mirror base carries out densification with chemical vapour deposition technique (CDV-SiC).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102187531A CN102313916A (en) | 2010-07-07 | 2010-07-07 | In-situ preparation method for SiC reflective mirror blank and device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102187531A CN102313916A (en) | 2010-07-07 | 2010-07-07 | In-situ preparation method for SiC reflective mirror blank and device |
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| CN102313916A true CN102313916A (en) | 2012-01-11 |
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| CN2010102187531A Pending CN102313916A (en) | 2010-07-07 | 2010-07-07 | In-situ preparation method for SiC reflective mirror blank and device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104400882A (en) * | 2014-10-29 | 2015-03-11 | 中国科学院长春光学精密机械与物理研究所 | Mirror blank preparation device and preparation method for carborundum reflecting mirror |
| CN110372408A (en) * | 2019-07-23 | 2019-10-25 | 中南大学 | A kind of ceramic fibre toughening CVD silicon carbide composite material and preparation method and application |
-
2010
- 2010-07-07 CN CN2010102187531A patent/CN102313916A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104400882A (en) * | 2014-10-29 | 2015-03-11 | 中国科学院长春光学精密机械与物理研究所 | Mirror blank preparation device and preparation method for carborundum reflecting mirror |
| CN104400882B (en) * | 2014-10-29 | 2016-08-24 | 中国科学院长春光学精密机械与物理研究所 | Silicon carbide mirror mirror base preparation facilities and preparation method |
| CN110372408A (en) * | 2019-07-23 | 2019-10-25 | 中南大学 | A kind of ceramic fibre toughening CVD silicon carbide composite material and preparation method and application |
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Application publication date: 20120111 |