CN102307001A - High-voltage gate driving circuit module with resistance to interference of common mode power noises - Google Patents
High-voltage gate driving circuit module with resistance to interference of common mode power noises Download PDFInfo
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- CN102307001A CN102307001A CN201110242927A CN201110242927A CN102307001A CN 102307001 A CN102307001 A CN 102307001A CN 201110242927 A CN201110242927 A CN 201110242927A CN 201110242927 A CN201110242927 A CN 201110242927A CN 102307001 A CN102307001 A CN 102307001A
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Abstract
The invention provides a high-voltage gate driving circuit module with resistance to the interference of common mode power noises. The module mainly comprises an anti-common mode power noise interference circuit, a high-voltage level shifting circuit, a pulse filtering circuit, an RS trigger and an output driving circuit, wherein the anti-common mode power noise interference circuit can decrease a common mode noise pulse width generated by the fluctuations of power signals at the output end of the level shifting circuit; the high-voltage level shifting circuit is mainly used for converting low-voltage input pulse signals into high-voltage pulse signals; and the pulse filtering circuit is used for filtering interference pulse signals below a certain width from the pulse signals output by the level shifting circuit and only keeping pulse signals which work normally. The anti-common mode power noise interference circuit consists of simple resistors, capacitors, Zener diodes and field effect transistors, so fewer circuit elements are used for effectively avoiding common mode power noise signals generated by the fluctuations of the power signals causing false triggering to power tubes by a high-voltage gate driving circuit.
Description
Technical field
The present invention relates to can be anti-the common mode power supply noise high pressure grid Driving technique field of disturbing, in the half-bridge driven chip in particularly a kind of ballast, motor-driven field for preventing that driving tube from being disturbed high-voltage driving circuit design by the employed anti-common mode power supply noise of misoperation.
Background technology
SPM (Intelligent Power Modular) is integrated in high voltage integrated circuit chip, low voltage control IC chip, discrete a plurality of circuit elements such as power device in the module; Have the not available a lot of advantages of electronic control system that traditional discrete electronic component constitutes; Replace the conditional electronic control system that discrete electronic devices and components are built in recent years gradually; Become the core component in the application such as current industrial motor, the various household electrical appliance of air-conditioning/refrigerator and motor turning control, have a very wide range of applications.
In recent years; Proposition along with notions such as the motor compact property and the feature of environmental protection; Variable-frequency motor has also been proposed higher level demand with IPM: miniaturization, low-power consumption, intellectuality, highly reliable, the integrated IPM of single-chip is exactly the concentrated expression of this development trend, and single-chip integrated intelligent power model needs the semiconductor technology platform based on the advanced person; Utilize high-end device and circuit design technique; With all kinds of high and low pressure circuit, be integrated on the chip piece like logic control circuit, protective circuit, high-voltage output circuit and high voltage gate dielectric bipolar device (IGBT) etc., realize complete systemic-function.At present; Grasping variable-frequency motor mainly is world-leading semiconductor company with the technological unit (mechanism) of the integrated IPM chip design and manufacturing of monolithic; It has mainly represented Toshiba, Hitachi, Mitsubishi, grace intelligence Pu, meaning method, and its product has occupied domestic most variable-frequency motor control chip market.The subject matter that causes this situation is exactly the disappearance of China's high drive chip circuit and technology core design and manufacturing technology.
The half-bridge driven chip mainly is used for driving the power tube of external half-bridge topological structure; Inner drive circuit is divided into high-pressure side driving circuit and low-pressure side drive circuit according to the difference of working power voltage; Open shutoff output point voltage power supply along with half-bridge topology is transistorized in quick condition; Therefore on high-tension side drive circuit voltage also should be operated in quick condition along with the variation of output point voltage, and this function mainly can realize through the boostrap circuit of outside.In order to reduce the whole power consumption of half-bridge driven chip; Mainly produce the transistorized drive signal in high-pressure side through the mode that produces the two-way short pulse; Thereby can suppress power consumption through the ON time that reduces inner level conversion switching tube like this, ON time is short more, and power consumption is more little.
Yet ON time is short more, and effectively pulse signal is with regard to the influence of the signal that is interfered more easily, and interference signal mainly contains two kinds, and a kind of is the differential mode noise pulse of different in width, and a kind of is the common mode power supply noise disturbing pulse of being introduced by power supply noise.In order to filter out undesirable interference signal, thereby generally can take the RC filter circuit can filter out the pulse signal that does not meet width requirement, such as the series of products of IR company for difference mode signal.For common mode power supply noise signal, because there is parasitic capacitance in the switching tube in the level shift circuit, so the existence of common mode power supply noise will produce displacement current on level shift circuit, thereby will be in resistance R
0Produce pressure drop and thought by mistake the triggering signal when being operate as normal, thereby under normal sequential, might make and produce straight-through phenomenon damage transistor between two power tubes by late-class circuit.For solving this kind problem, can adopt special common-mode noise to suppress circuit common-mode voltage noise is converted into electric current, through differential right form it is eliminated again, all can adopt this kind common mode inhibition circuit in the half-bridge series of products of Fairchild company.The most frequently used common mode inhibition circuit major defect of this kind is: the 1. whole structure more complicated of circuit, implementation difficulty; 2. because it is on the propagation path of chip overall signal, so it can increase the delay of integrated circuit; 3. this circuit is still in running order when the chip operate as normal, thereby the overall operation circuit that therefore can increase chip influences chip power-consumption.
Summary of the invention
The problem of disturbing to the anti-common mode power supply noise of high pressure grid drive circuit; The present invention provides a kind of high pressure grid drive circuit module that false triggering signal and circuit structure simply can anti-common mode power supply noise disturb of can effectively avoiding producing; The present invention can not influence the normal operative condition of circuit in the antinoise interference performance that guarantees integrated circuit.
Technical scheme of the present invention is:
A kind of can be anti-the high pressure grid drive circuit module that disturbs of common mode power supply noise, comprise high-pressure level shift circuit, the pulse bandwidth filtering circuit; Rest-set flip-flop, out drive stage circuit, wherein the input of high-pressure level shift circuit is provided by external input signal, and its output connects the input of pulse bandwidth filtering circuit; The output of pulse bandwidth filtering circuit gets into the out drive stage circuit through rest-set flip-flop, is connected with anti-common mode power supply noise signal interference circuit at the output of high-pressure level shift circuit, and said anti-common mode power supply noise interfered circuit is managed M1 by PMOS; Resistance R 1, capacitor C 1 and Zener diode D1 form, resistance R 1 one termination power VB; Another termination PMOS pipe M1 grid, PMOS pipe M1 source electrode meets power supply VB, and PMOS pipe M1 drain electrode connects the output of high-pressure level shift circuit; The grid of the one termination PMOS pipe of capacitor C 1; The other end ground connection of capacitor C 1, Zener diode D1 negative electrode meets power supply VB, and Zener diode D1 anode connects the grid of PMOS pipe.
Compared with prior art, the present invention has following advantage:
(1) can effectively reduce of the influence of common mode power supply noise to circuit working state.The anti-common mode power supply noise interfered circuit that comprises among the present invention can reduce by the power supply signal fluctuation in the common-mode noise pulse duration of level shift circuit output generation effectively; Thereby make it can't pass through the pulse bandwidth filtering circuit of back level, thereby effectively avoid the fluctuation of power supply signal that late-class circuit is produced the false triggering signal.
(2) anti-common mode power supply noise interfered circuit is simple in structure.Anti-common mode power supply noise interfered circuit structure in the high-pressure level shift circuit is only by a PMOS pipe; A resistance; An electric capacity and a Zener diode are formed; Compare the integrated circuit structure with the traditional anti-common mode power supply noise interfered circuit structure of major part and want simple a lot, can adopt device still less to realize same antinoise interference function.
(3) do not influence the normal operative condition of circuit.Supply voltage is stable during grid drive circuit operate as normal; Therefore anti-common-mode noise interfered circuit is not worked; Have only that anti-common mode power supply noise interfered circuit just works when occurring the common mode power supply noise in the power supply; In the antinoise interference performance that guarantees integrated circuit, the present invention does not influence the normal operative condition of circuit thus.
(4) the chip bulk delay is little.The anti-common mode power supply noise interfered circuit that adds among the present invention on the propagation path of signal, is not therefore said the bulk delay when not influencing the circuit module operate as normal when the circuit operate as normal.
(5) power consumption of chip is lower.Anti-common mode power supply noise interfered circuit among the present invention does not influence the overall work electric current when the chip operate as normal, therefore need not introduce extra power supply power consumption.
(6) integrated circuit is convenient integrated.All related devices all can adopt high-low pressure compatible technology and integrated circuit to integrate in the anti-common mode power supply noise interfered circuit, and because circuit relatively simple for structure, so whole shared chip area is smaller.
Description of drawings
Fig. 1 is the basic topological structure that half-bridge drive circuit drives the external power pipe.
Fig. 2 be the present invention can be anti-the structured flowchart of the high pressure grid drive circuit module that disturbs of common mode power supply noise.
Fig. 3 is the physical circuit figure of mesohigh level shift circuit of the present invention and anti-common mode power supply noise interfered circuit.
Fig. 4 is common not with the work wave of the high-pressure level shift circuit of anti-common mode power supply noise interfered circuit.
Fig. 5 be among the present invention with the work wave of the high-pressure level shift circuit of anti-common mode power supply noise interfered circuit, among the figure, the dv/dt noise is the common mode power supply noise.
Embodiment
A kind of can be anti-the high pressure grid drive circuit module that disturbs of common mode power supply noise, comprise high-pressure level shift circuit 1, pulse bandwidth filtering circuit 2; Rest-set flip-flop 3, out drive stage circuit 4, wherein the input of high-pressure level shift circuit 1 is provided by external input signal, and its output connects the input of pulse bandwidth filtering circuit 2; The output of pulse bandwidth filtering circuit 2 gets into out drive stage circuit 4 through rest-set flip-flop 3, is connected with anti-common mode power supply noise signal interference circuit 5 at the output of high-pressure level shift circuit 1, and said anti-common mode power supply noise interfered circuit 5 is by PMOS pipe M1; Resistance R 1, capacitor C 1 and Zener diode D1 form, resistance R 1 one termination power VB; Another termination PMOS pipe M1 grid, PMOS pipe M1 source electrode meets power supply VB, and PMOS pipe M1 drain electrode connects the output of high-pressure level shift circuit 1; The grid of the one termination PMOS pipe of capacitor C 1, the other end ground connection of capacitor C 1, Zener diode D1 negative electrode meets power supply VB; Zener diode D1 anode connects the grid of PMOS pipe, and in the present embodiment, high-pressure level shift circuit 1 is by NLDMOS pipe M0; Drain terminal resistance R 0 is formed with Zener diode D0, and the grid of NLDMOS pipe M0 connects the low voltage pulse signal of outside input, the source ground of NLDMOS pipe M0; The end of the drain electrode connecting resistance R0 of NLDMOS pipe M0; Another termination power supply signal VB of resistance R 0, the negative electrode of Zener diode D0 meets power supply VB, and anode connects the drain terminal of NLDMOS pipe M0.
With reference to the accompanying drawings, embodiments of the invention are made more detailed description:
Like Fig. 1, M
H, M
LBe two power tubes that are connected with half-bridge topology, the external HVB high voltage bias power supply of half-bridge topology V
DC, the high-pressure side grid drive circuit module among the present invention mainly is used for driving power tube M
H, to be amplitude be 0 to V along with opening of last power tube turn-offed output point Vs voltage
DCSquare-wave variations, Vs is as the ground of high-pressure side grid drive circuit, in each cycle, can be adopted external power supply Vcc and bootstrap diode D in order to guarantee power tube by accurate unlatching
B, bootstrap capacitor C
BForming the voltage boostrap circuit is that high-pressure side grid drive circuit provides bias supply V
B, finally produce square-wave signal control and go up power tube through high-pressure side grid drive circuit
Open and turn-off.
Like Fig. 2, of the present invention can be anti-the high pressure grid drive circuit module that disturbs of common mode power supply noise mainly comprise anti-common mode power supply noise interfered circuit module, high-pressure level shift circuit module, pulse bandwidth filtering circuit module, rest-set flip-flop and output driving circuit.For thereby the ON time that shortens power tube in the level shift circuit reduces power consumption, high side grid drive circuit adopts the working method of burst pulse.Wherein high-pressure level shift circuit mainly is used for converting the input narrow pulse signal of low pressure to the high voltage narrow pulse signal; Anti-common mode power supply noise interfered circuit can reduce the common-mode noise pulse duration that is produced at the level shift circuit output by the power supply signal fluctuation; The pulse bandwidth filtering circuit is used for all filtering out the undesirable disturbing pulse signal of width in the narrow pulse signal of level shift circuit output generation; Thereby the pulse signal that can export operate as normal is formed with the square-wave signal entering out drive stage circuit of fixed cycle through the conversion of rest-set flip-flop; Final output have the appropriate drive ability square-wave signal, be used in the control chart 1 conducting of high-side transistor to turn-off.Anti-dv/dt noise jamming circuit is made up of simple resistance, electric capacity, Zener diode, FET; Can reduce with circuit element seldom by the power supply signal fluctuation in the common-mode noise pulse duration of level shift circuit output generation; Make it can't pass through the pulse bandwidth filtering circuit of back level, thereby the common mode power supply noise signal of effectively avoiding the power supply signal fluctuation to produce is realized false triggering through high pressure grid drive circuit to power tube.
Be illustrated in figure 3 as the anti-common mode power supply noise interfered circuit that designs among the present invention and the particular circuit configurations of high-pressure level shift circuit.Input signal is the narrow pulse signal that fixed pulse width is arranged in the level shift circuit, M
0For can high voltage bearing NLDMOS, it be open-minded between high period in input burst pulse amplitude, and the conducting electric current is at ohmic leakage R
0Last generation pressure drop, the amplitude peak of pressure drop is by Zener diode D
0Puncture voltage institute clamp, thereby can protect the device in the back level pulse bandwidth filtering circuit can be by R
0Going up excessive pressure drop punctures.Resistance R during operate as normal
0On pressure drop will produce the output pulse signal opposite of fixed amplitude at the NLDMOS drain terminal with the input pulse phase place, only be lower than the upset level V of late-class circuit
ThOutput level be only effective output signal, this output signal will import the pulse bandwidth filtering circuit of back level, filtering is the noise signal of width deficiency wherein.
Like Fig. 4 when not connecing anti-common mode power supply noise interfered circuit, the work wave of high-pressure level shift circuit under the common mode power supply noise disturbs.Because NLDMOS pipe M
0There is parasitic capacitance in drain terminal, and the common mode noise signal that power source change produces will produce displacement current through the parasitic capacitance of NLDMOS, thereby at R
0If last generation voltage drop is this voltage drop (V
B-V
O) enough big and low-level pulse width t
LGreater than the designed filters width of pulse bandwidth filtering circuit, noise signal will cause the false triggering to power tube.
By false triggering, introduced anti-common mode power supply noise interfered circuit for fear of power tube among the present invention.C in the anti-common mode power supply noise interfered circuit
1Be the electric capacity that has the same process structure with NLDMOS, this kind structure can guarantee C
1Has higher puncture voltage, C
1Effect be that interference noise can pass through C after power end produces common-mode noise
1R is flow through in generation
1, C
1The displacement current of branch road, the displacement current that is produced will flow through resistance R
1Thereby at R
1Last generation pressure drop, when this pressure drop greater than PMOS switching tube M
1Threshold voltage V
ThpThe time, M
1Will be unlocked, and Zener diode D
1Existence will guarantee M
1Thereby the pressure drop on the grid can too highly not cause M
1Breakdown.M
1After the unlatching, if also have owing to the displacement current that exists parasitic capacitance to produce on the NLDMOS this moment, the M after then opening
1Will form current path with the parasitic capacitance of NLDMOS, as if M this moment
1Voltage between leak in the source is V
Sdp, the output level V of level shift circuit then
oBe (V
B-V
Sdp).
Fig. 5 is the work wave of high-pressure level shift circuit behind the external anti-common mode power supply noise interfered circuit.If M
1Be desirable switching tube, then the V after the conducting
SdpVery low, thus the output point voltage V of level shift circuit made
oBe pulled back to the position of approximate high level again.Therefore, we can shorten NLDMOS drain electrode output signal V as far as possible through anti-common mode power supply interfered circuit
OIn the effective low level t that holds time
L, make that signal that the common mode power supply noise produced can't be through the pulse bandwidth filtering circuit, thereby the common mode power supply noise signal of effectively avoiding the power supply signal fluctuation to produce is realized false triggering through high pressure grid drive circuit to power tube.
Claims (2)
- One kind can be anti-the high pressure grid drive circuit module that disturbs of common mode power supply noise, comprise high-pressure level shift circuit 1, pulse bandwidth filtering circuit 2; Rest-set flip-flop 3, out drive stage circuit 4, wherein the input of high-pressure level shift circuit 1 is provided by external input signal, and its output connects the input of pulse bandwidth filtering circuit 2; The output of pulse bandwidth filtering circuit 2 gets into out drive stage circuit 4 through rest-set flip-flop 3, it is characterized in that, is connected with anti-common mode power supply noise signal interference circuit 5 at the output of high-pressure level shift circuit 1; Said anti-common mode power supply noise interfered circuit 5 is managed M1 by PMOS, resistance R 1, and capacitor C 1 and Zener diode D1 form; Resistance R 1 one termination power VB, another termination PMOS pipe M1 grid, PMOS pipe M1 source electrode meets power supply VB; PMOS pipe M1 drain electrode connects the output of high-pressure level shift circuit 1, the grid of the termination PMOS pipe of capacitor C 1, the other end ground connection of capacitor C 1; Zener diode D1 negative electrode meets power supply VB, and Zener diode D1 anode connects the grid of PMOS pipe.
- 2. according to claim 1 can be anti-the high pressure grid drive circuit module that disturbs of common mode power supply noise; It is characterized in that high-pressure level shift circuit 1 is by NLDMOS pipe M0, drain terminal resistance R 0 is formed with Zener diode D0; The grid of NLDMOS pipe M0 connects the low voltage pulse signal of outside input; The source ground of NLDMOS pipe M0, the end of the drain electrode connecting resistance R0 of NLDMOS pipe M0, another termination power supply signal VB of resistance R 0; The negative electrode of Zener diode D0 meets power supply VB, and anode connects the drain terminal of NLDMOS pipe M0.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110242927A CN102307001A (en) | 2011-08-23 | 2011-08-23 | High-voltage gate driving circuit module with resistance to interference of common mode power noises |
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|---|---|---|---|
| CN201110242927A CN102307001A (en) | 2011-08-23 | 2011-08-23 | High-voltage gate driving circuit module with resistance to interference of common mode power noises |
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| CN102307001A true CN102307001A (en) | 2012-01-04 |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102647177A (en) * | 2012-04-06 | 2012-08-22 | 东南大学 | High-voltage side gate driving circuit capable of resisting common-mode noise interference |
| CN103117740B (en) * | 2013-01-15 | 2016-08-31 | 电子科技大学 | Low-power-consumptiolevel level shift circuit |
| CN106506004A (en) * | 2016-10-20 | 2017-03-15 | 天津大学 | Bio electricity and the single channel harvester for raising level Quadrature square-wave frequency modulation multiple signals |
| CN109347310A (en) * | 2018-12-05 | 2019-02-15 | 中国电子科技集团公司第四十三研究所 | A kind of circuit filtered suitable for DC/DC power supply combination Surge suppression and EMI |
| CN110429926A (en) * | 2019-07-30 | 2019-11-08 | 陕西科技大学 | A kind of SCM Based modular pulse high voltage power supply |
| CN113098458A (en) * | 2021-03-31 | 2021-07-09 | 黄山学院 | High common mode transient suppression differential signal receiving circuit for high-voltage gate driving chip |
| CN113126685A (en) * | 2021-04-02 | 2021-07-16 | 广州安凯微电子股份有限公司 | Noise filter circuit and low dropout regulator |
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| CN101917811A (en) * | 2010-08-02 | 2010-12-15 | 西安新光明电子科技有限公司 | Anti-noise jamming high-side drive circuit |
| CN202260990U (en) * | 2011-08-23 | 2012-05-30 | 东南大学 | High-voltage grid drive circuit module capable of resisting common-mode power supply noise interference |
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| KR20060005515A (en) * | 2004-07-13 | 2006-01-18 | 페어차일드코리아반도체 주식회사 | Level shift circuit and suppressing method for false operation thereof |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102647177A (en) * | 2012-04-06 | 2012-08-22 | 东南大学 | High-voltage side gate driving circuit capable of resisting common-mode noise interference |
| CN103117740B (en) * | 2013-01-15 | 2016-08-31 | 电子科技大学 | Low-power-consumptiolevel level shift circuit |
| CN106506004A (en) * | 2016-10-20 | 2017-03-15 | 天津大学 | Bio electricity and the single channel harvester for raising level Quadrature square-wave frequency modulation multiple signals |
| CN109347310A (en) * | 2018-12-05 | 2019-02-15 | 中国电子科技集团公司第四十三研究所 | A kind of circuit filtered suitable for DC/DC power supply combination Surge suppression and EMI |
| CN109347310B (en) * | 2018-12-05 | 2023-11-07 | 中国电子科技集团公司第四十三研究所 | Circuit suitable for DC/DC power supply combines surge suppression and EMI filtering |
| CN110429926A (en) * | 2019-07-30 | 2019-11-08 | 陕西科技大学 | A kind of SCM Based modular pulse high voltage power supply |
| CN110429926B (en) * | 2019-07-30 | 2023-01-31 | 陕西科技大学 | Modularized pulse high-voltage power supply based on single chip microcomputer |
| CN113098458A (en) * | 2021-03-31 | 2021-07-09 | 黄山学院 | High common mode transient suppression differential signal receiving circuit for high-voltage gate driving chip |
| CN113126685A (en) * | 2021-04-02 | 2021-07-16 | 广州安凯微电子股份有限公司 | Noise filter circuit and low dropout regulator |
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Application publication date: 20120104 |