CN102299483A - Preparation method of coupling waveguide laser of integration photonic crystal phase modulator - Google Patents
Preparation method of coupling waveguide laser of integration photonic crystal phase modulator Download PDFInfo
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- CN102299483A CN102299483A CN 201110148041 CN201110148041A CN102299483A CN 102299483 A CN102299483 A CN 102299483A CN 201110148041 CN201110148041 CN 201110148041 CN 201110148041 A CN201110148041 A CN 201110148041A CN 102299483 A CN102299483 A CN 102299483A
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Abstract
The invention provides a preparation method of a coupling waveguide laser of an integration photonic crystal phase modulator. Each unit comprises the following steps: (1) taking an active gallium arsenide epitaxial wafer which comprises a substrate, a lower restriction layer, an active layer and an upper restriction layer; (2) etching a periodic coupling waveguide structure on the upper restriction layer of the active gallium arsenide epitaxial wafer; (3) preparing a metal electrode on the periodic coupling waveguide structure and under the substrate; (4) preparing a photonic crystal phase modulator at one side of the coupling waveguide structure; (5) preparing a transmission waveguide which is in a wedge form at a side surface of the photonic crystal phase modulator, wherein the side surface is close to a side of the periodic coupling waveguide structure; (6) preparing a plurality of air holes on the surface of the photonic crystal phase modulator by employing a method of dry method etching and forming an air hole array to complete the preparation method of the coupling waveguide laser of the integration photonic crystal phase modulator.
Description
Technical field
The present invention relates to the semiconductor photoelectronic device technical field, relate in particular to a kind of preparation method of coupled waveguide laser of integrated photon crystalline phase modulator.
Background technology
Coupled waveguide is the normal a kind of structure that is used for model selection that adopts in the semiconductor laser.In the coupled waveguide laser, out of phase (dephasing) pattern has the highest gain usually, is preferential sharp pattern of penetrating; But the phase difference of dephasing pattern field between adjacent waveguide is π, and the side direction far field is a two peak structure.And another kind of pattern In phase (homophase) pattern in the coupled waveguide laser has unimodal far field, is desired pattern.Penetrate in order to obtain the sharp of in-phase mode, people have proposed various schemes, as adopting loss that the plate coupling process increases the dephasing pattern to offset its gain advantage or to adopt optionally pumping to come gain inequality between the change pattern.Such scheme can improve device-side to far-field characteristic, is weak index guide structure but these structures often require waveguide, and this is unfavorable for the stability of device, and has other mode producing under the big electric current injection, influences far-field characteristic.Also there is the researcher to utilize anti-waveguiding structure to realize that refringence is that the sharp of in-phase mode under 0.1 penetrated, but need adopts repeatedly the technology of extension.
The distribution of dephasing pattern and charge carrier is mated most in the coupled waveguide, is pattern the most stable in the structure therefore, also is the optimal selection that obtains the stabilizing device performance.But the selection best from far-field characteristic is in-phase mode, as if the high-quality of the stability of device and light beam is difficult to take into account like this.If the phase relation in the time of can changing the outgoing of dephasing pattern between the waveguide makes it the vanishing from π, the dephasing pattern then can possess the far-field characteristic of in-phase mode so, and stability and high light beam quality also can be taken into account.
Summary of the invention
Main purpose of the present invention is to provide a kind of preparation method of coupled waveguide laser of integrated photon crystalline phase modulator, solves the phase transition problem of dephasing pattern in the coupled waveguide, reaches the purpose that realizes stable and high light beam quality simultaneously.
For achieving the above object, the invention provides a kind of preparation method of coupled waveguide laser of integrated photon crystalline phase modulator, wherein each unit comprises the steps:
Step 1: get an active gallium arsenide epitaxy sheet, this active gallium arsenide epitaxy sheet comprises substrate, lower limit layer, active layer and upper limiting layer;
Step 2: the periodic Coupled Passive Waveguide Structure of etching on the upper limiting layer of active gallium arsenide epitaxy sheet;
Step 3: below the surface of periodicity Coupled Passive Waveguide Structure and substrate, prepare metal electrode respectively;
Step 4:, prepare a photonic crystal phase-modulator in a side of Coupled Passive Waveguide Structure;
Step 5: the close periodically side of Coupled Passive Waveguide Structure in the side of this photonic crystal phase-modulator, prepare a transmission waveguide, this transmission waveguide is a wedge shape;
Step 6: adopt the method for dry etching to prepare a plurality of airports on the surface of this photonic crystal phase-modulator, form the airport array, finish the preparation method of the coupled waveguide laser of integrated photon crystalline phase modulator.
In the wherein said Coupled Passive Waveguide Structure, only wave guide zone is injected, and injection is not all done in waveguide separation district and light field restricted area.
The degree of depth of wherein said airport is in lower limit layer.
The angle of wherein said wedge shape transmission waveguide is θ,
λ wherein
0, n and a
rBe respectively the cycle of vacuum wavelength, mode refractive index and the coupled waveguide of excitation mode in the coupled waveguide.
Wherein the exit facet of Coupled Passive Waveguide Structure is parallel with the plane of incidence of transmission waveguide.
Wherein the distance between this Coupled Passive Waveguide Structure and the photonic crystal phase-modulator is half vacuum wavelength λ
0
From technique scheme as can be seen, the present invention has following beneficial effect:
1, the preparation method of the coupled waveguide laser of integrated photon crystalline phase modulator provided by the invention, it is the method that adopts 2 D photon crystal that coupled waveguide laser side form is modulated, utilized the auto-collimation effect of photonic crystal to light field, the orientation output of light field can be realized, the light beam of better quality can be obtained.
2, the preparation method of the coupled waveguide laser of integrated photon crystalline phase modulator provided by the invention, the method that this employing 2 D photon crystal is modulated coupled waveguide laser side form, what use is dephasing pattern in the coupled waveguide laser, can guarantee the stability of laser.
Description of drawings
For making the auditor can further understand structure of the present invention, feature and purpose thereof, below in conjunction with the detailed description of accompanying drawing and preferred embodiment as after, wherein:
Fig. 1 carries out the concrete enforcement schematic diagram of the method for phase modulated to coupled waveguide laser side form for employing 2 D photon crystal provided by the invention.
Fig. 2 is the sectional view of Coupled Passive Waveguide Structure of the present invention.
The near field distribution of dephasing pattern in the coupled waveguide that Fig. 3 will improve for the present invention.
The far-field distribution of dephasing pattern in the coupled waveguide that Fig. 4 will improve for the present invention
Fig. 5 carries out the near field distribution of pattern after the phase modulated for adopting 2 D photon crystal to the coupled waveguide lasing mode.
Fig. 6 carries out the near field distribution of pattern after the phase modulated for adopting 2 D photon crystal to the coupled waveguide lasing mode.
Embodiment
See also Fig. 1, shown in Figure 2, the preparation method of the coupled waveguide laser of a kind of integrated photon crystalline phase modulator provided by the invention, wherein each unit comprises the steps:
Step 1: get an active gallium arsenide epitaxy sheet 100, this active gallium arsenide epitaxy sheet 100 comprises substrate 16, lower limit layer 15, active layer 14 and upper limiting layer 13;
Step 2: the periodic Coupled Passive Waveguide Structure 10 of etching on the upper limiting layer 13 of active gallium arsenide epitaxy sheet 100; In the waveguiding structure 10, only wave guide zone 1 is injected, and injection is not all done in waveguide separation district 2 and light field restricted area 3;
Step 3: below the surface of periodicity Coupled Passive Waveguide Structure 10 and substrate 16, prepare metal electrode 11,17 respectively;
Step 4: in a side of Coupled Passive Waveguide Structure 10, prepare a photonic crystal phase-modulator 20, the distance between Coupled Passive Waveguide Structure 10 and the photonic crystal phase-modulator 20 is half vacuum wavelength λ 0;
Step 5: the close periodically side of Coupled Passive Waveguide Structure 10 in the side of this photonic crystal phase-modulator 20, prepare a transmission waveguide 6, this transmission waveguide 6 is a wedge shape; The angle of wedge shape is θ,
Wherein λ 0, n and ar are respectively the cycle of vacuum wavelength, mode refractive index and the coupled waveguide of excitation mode in the coupled waveguide.The exit facet of Coupled Passive Waveguide Structure 10 is parallel with the plane of incidence of transmission waveguide 6;
Step 6: adopt the method for dry etching to prepare a plurality of airports 8 on the surface of this photonic crystal phase-modulator 20, form the airport array, the degree of depth of described airport 8 is in lower limit layer 15.Finish the preparation method of the coupled waveguide laser of integrated photon crystalline phase modulator.
Provided the side form modulation of 2 D photon crystal in this example to nine passage coupled waveguide lasers.This example adopts method shown in Figure 1, the wide λ that is respectively of the cycle of waveguiding structure and bar
0With 2 λ
0/ 3, λ
0Be laser wavelength in a vacuum.
Fig. 3 and Fig. 4 are near-field pattern and the far-field patterns that adopts before the photonic crystal modulation, therefrom as can be known between the waveguide near field phase difference be π, far field imaging double-hump characteristics.
Fig. 5 and Fig. 6 adopt in near-field pattern after the photonic crystal modulation and the far-field pattern as can be known that phase difference is zero between the waveguide near field, and the far field becomes 7 ° unimodal.
From the result of example, the method that this employing 2 D photon crystal is modulated coupled waveguide laser side form has great improvement to the far field of dephasing pattern in the coupled waveguide, therefore has using value.
Above-described system block diagram and enforcement circuit diagram; to purpose of the present invention; technical scheme and beneficial effect further describe; institute is understood that; the above is specific embodiments of the invention only, is not limited to the present invention, and is within the spirit and principles in the present invention all; any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (6)
1. the preparation method of the coupled waveguide laser of an integrated photon crystalline phase modulator, wherein each unit comprises the steps:
Step 1: get an active gallium arsenide epitaxy sheet, this active gallium arsenide epitaxy sheet comprises substrate, lower limit layer, active layer and upper limiting layer;
Step 2: the periodic Coupled Passive Waveguide Structure of etching on the upper limiting layer of active gallium arsenide epitaxy sheet;
Step 3: below the surface of periodicity Coupled Passive Waveguide Structure and substrate, prepare metal electrode respectively;
Step 4:, prepare a photonic crystal phase-modulator in a side of Coupled Passive Waveguide Structure;
Step 5: the close periodically side of Coupled Passive Waveguide Structure in the side of this photonic crystal phase-modulator, prepare a transmission waveguide, this transmission waveguide is a wedge shape;
Step 6: adopt the method for dry etching to prepare a plurality of airports on the surface of this photonic crystal phase-modulator, form the airport array, finish the preparation method of the coupled waveguide laser of integrated photon crystalline phase modulator.
2. the preparation method of the coupled waveguide laser of integrated photon crystalline phase modulator according to claim 1 in the wherein said Coupled Passive Waveguide Structure, only wave guide zone is injected, and injection is not all done in waveguide separation district and light field restricted area.
3. the preparation method of the coupled waveguide laser of integrated photon crystalline phase modulator according to claim 1, the degree of depth of wherein said airport is in lower limit layer.
4. the preparation method of the coupled waveguide laser of integrated photon crystalline phase modulator according to claim 1, the angle of wherein said wedge shape transmission waveguide is θ,
λ wherein
0, n and a
rBe respectively the cycle of vacuum wavelength, mode refractive index and the coupled waveguide of excitation mode in the coupled waveguide.
5. the preparation method of the coupled waveguide laser of integrated photon crystalline phase modulator according to claim 1, wherein the exit facet of Coupled Passive Waveguide Structure is parallel with the plane of incidence of transmission waveguide.
6. the preparation method of the coupled waveguide laser of integrated photon crystalline phase modulator according to claim 1, wherein the distance between this Coupled Passive Waveguide Structure and the photonic crystal phase-modulator is half vacuum wavelength λ
0
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1191044A (en) * | 1995-05-18 | 1998-08-19 | 西门子公司 | Process for producing a DFB laser diode with coupled waveguide and DFB laser film structure |
| US20070280592A1 (en) * | 2004-03-03 | 2007-12-06 | National Institute Of Advanced Industrial Sci & Tech | Photonic Crystal Coupling Defect Waveguide and Photonic Crystal |
| CN101741014A (en) * | 2009-12-16 | 2010-06-16 | 中国科学院半导体研究所 | Microcavity laser of lateral coupling output waveguide |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1191044A (en) * | 1995-05-18 | 1998-08-19 | 西门子公司 | Process for producing a DFB laser diode with coupled waveguide and DFB laser film structure |
| US20070280592A1 (en) * | 2004-03-03 | 2007-12-06 | National Institute Of Advanced Industrial Sci & Tech | Photonic Crystal Coupling Defect Waveguide and Photonic Crystal |
| CN101741014A (en) * | 2009-12-16 | 2010-06-16 | 中国科学院半导体研究所 | Microcavity laser of lateral coupling output waveguide |
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