CN102295893A - Circuit connecting adhesive film and use thereof, structure body, manufacturing method and connection method thereof - Google Patents
Circuit connecting adhesive film and use thereof, structure body, manufacturing method and connection method thereof Download PDFInfo
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- CN102295893A CN102295893A CN2011101623561A CN201110162356A CN102295893A CN 102295893 A CN102295893 A CN 102295893A CN 2011101623561 A CN2011101623561 A CN 2011101623561A CN 201110162356 A CN201110162356 A CN 201110162356A CN 102295893 A CN102295893 A CN 102295893A
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/35—Heat-activated
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
- C09J9/02—Electrically-conducting adhesives
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
- H01R4/04—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation using electrically conductive adhesives
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/304—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive being heat-activatable, i.e. not tacky at temperatures inferior to 30°C
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
- C09J2301/408—Additional features of adhesives in the form of films or foils characterized by the presence of essential components additives as essential feature of the adhesive layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
- H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
- H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Adhesive Tapes (AREA)
Abstract
The invention relates to a circuit connecting adhesive film and the use thereof, a structure body and the manufacturing and connection method thereof. The circuit connecting adhesive film includes a conductive adhesive layer containing an adhesive composition and conductive particles, and an insulating adhesive layer containing an adhesive composition but not conductive particles. The adhesive composition in the conductive adhesive layer contains (a) film-forming materials with the vitrification temperature thereof to be 40 -70 DEG C, (b) epoxy resin and (c) latent curing agent.
Description
Technical field
The present invention relates to circuit connecting adhesive film and uses thereof, circuit connection structure and manufacture method thereof and circuit member connecting method.
Background technology
All the time, for the glass substrate of semiconductor element with flat-panel monitor (FPD) usefulness such as substrate, especially liquid crystal is connected, use by heating solidified heat-curable adhesive film always.
As heat cured adhesive film, be extensive use of the material that contains as the Resins, epoxy of thermosetting resin, Resins, epoxy is when solidifying by heating, formed the high polymkeric substance of physical strength, therefore semiconductor element firmly is connected by this adhesive film with liquid-crystal display, can obtain the high electrical means of reliability.In recent years, contain with Resins, epoxy towards use gradually and compare, can be in the adhesive film development of solidified acrylate under the low temperature more.
Yet, using adhesive film to connect under the situation of glass substrate and semiconductor element, when caking agent film, heat by thermal conduction, produced thermal expansion, therefore there is semiconductor element tensile situation.Therefore, finish the back when integral body is cooled off, exist the tensile semiconductor element to shrink,, on the glass substrate that constitutes FPD, produced the situation of distortion such as warpage along with this shrinks in heating.When producing distortion on glass substrate, the indicating meter display image that is positioned at crushed element has produced confusion.
Up to now, in order to suppress distortion such as warpage, known have a whole bag of tricks.For example, reported the method (TOHKEMY 2006-229124 communique) that film is connected between heating and pressurizing tool and semiconductor element, and after heating and pressurizeing operation, the method that heats (TOHKEMY 2004-200230 communique).
In addition, the also a kind of as can be known recently method (TOHKEMY 2004-277573 communique, No. 3477367 communique of Japanese Patent) that to carry out stress demulcent material of in adhesive film, using.
Summary of the invention
Yet, can carry out the distortion that stress demulcent material can suppress glass substrate though use, have the problem that connection reliability descends.In addition, the film-forming properties that has when forming adhesive film descends, and is difficult to the stable situation that obtains adhesive film.In addition, particularly along with the thickness attenuation of glass substrate and semiconductor element, have the tendency that significantly produces warpage (distortion of glass substrate) easily.
Therefore, even the purpose of this invention is to provide a kind of when being used to connect thin glass substrate of thickness ratio circuit substrate in the past and semiconductor element, also can keep excellent connection reliability, can suppress simultaneously the distortion of glass substrate, and circuit connecting adhesive film that film-forming properties is also excellent and uses thereof, and circuit connection structure and manufacture method and the circuit member connecting method of using this bonding film.
The inventor has carried out active research in order to address the above problem, found that it is owing to the internal stress of the circuit connecting adhesive film that back (solidifying the back) is installed is too high that circuit block produces distortion, connection reliability decline is owing to produced the low excessively part of modulus of elasticity in the circuit connecting adhesive film after installation in addition.Also as can be known, particularly under the low excessively situation in modulus of elasticity part, electrode of opposite is difficult to keep the flat of conducting particles each other, therefore has the tendency that connection reliability descends.
The inventor has done further research based on this opinion, discovery is by using the film forming material of the second-order transition temperature with regulation in the circuit connecting adhesive film, can keep high connecting reliability, and can suppress the distortion of base material, thereby finish the present invention.
Promptly, the invention provides a kind of circuit connecting adhesive film, it possesses the conductive adhesive layer that contains adhesive composite and conducting particles, with contain adhesive composite but do not contain the insulativity bond layer of conducting particles, wherein, it is 40～70 ℃ film forming material that the adhesive composite that contains in the conductive adhesive layer comprises (a) second-order transition temperature, (b) Resins, epoxy and (c) potentiality solidifying agent, and this circuit connecting adhesive film is used for the 1st circuit block that formed the 1st circuit electrode on the interarea of the 1st circuit substrate below the 0.3mm with at thickness being, with at thickness be the 2nd circuit block that has formed the 2nd circuit electrode on the interarea of the 2nd circuit substrate below the 0.3mm, be electrically connected making under the 1st circuit electrode state relative with the 2nd circuit electrode.
If such circuit connecting adhesive film, then since used in the adhesive composite in the conductive adhesive layer second-order transition temperature with regulation (below, be called " Tg ") (a) film forming material, therefore, even after film is solidified, also the internal stress in the cured article can be suppressed for lower, and can make cured article integral body have homogeneous and sufficient elasticity modulus.Thus, even when being used to possess thickness and being each other the connection of circuit block of the circuit substrate below the 0.3mm, also can suppress the distortion of circuit block, and obtain good connection reliability simultaneously.In addition, because the adhesive composite in the conductive adhesive layer comprises (a) film forming material of the Tg with regulation, and contain (b) Resins, epoxy and (c) potentiality solidifying agent simultaneously, therefore film-forming properties excellence not only, and can realize excellent thermotolerance and cementability.
In addition, this is two-layer because the circuit connecting adhesive film has conductive adhesive layer and insulativity bond layer, so electrode of opposite catches conducting particles each other easily, can improve connection reliability.Thus, can obtain good connection reliability.
For circuit connecting adhesive film of the present invention, its conductive adhesive layer and/or insulativity bond layer can further contain (d) insulativity particle.Thus, can keep more excellent connection reliability.
In addition, the invention provides a kind of circuit connection structure, it possess on thickness is the interarea of the 1st circuit substrate below the 0.3mm formed the 1st circuit block of the 1st circuit electrode, be to have formed the 2nd circuit electrode on the interarea of the 2nd circuit substrate below the 0.3mm at thickness, and it is relative with the 1st circuit electrode to be configured to the 2nd circuit electrode, and the 2nd circuit block and the connection section between the 1st circuit block and the 2nd circuit block that the 2nd circuit electrode is electrically connected with the 1st circuit electrode, connection section is the cured article of circuit connecting adhesive film of the present invention.
If such circuit connection structure, then owing to the cured article of connection section by circuit connecting adhesive film of the present invention forms, therefore the internal stress in the circuit connection structure can be suppressed for lower, and can suppress the generation that modulus of elasticity is crossed lower part.Therefore, the distortion of circuit block can be suppressed, excellent connection reliability can be realized simultaneously.
The present invention further provides a kind of manufacture method of circuit connection structure, it comprises that the circuit connecting adhesive film that makes the invention described above has formed the 1st circuit block of the 1st circuit electrode and is to have formed on the interarea of the 2nd circuit substrate below the 0.3mm between a pair of circuit block of the 2nd circuit block of the 2nd circuit electrode at thickness between possessing on thickness is the interarea of the 1st circuit substrate below the 0.3mm, obtain the operation of multilayer body, with by multilayer body being heated and pressurizeing, the circuit connecting adhesive film is solidified, thereby form between a pair of circuit block, so that the operation of the bonding a pair of circuit block of the mode connection section each other that the 1st circuit electrode of relative configuration and the 2nd circuit electrode are electrically connected.
If such manufacture method then can be made the distortion that can suppress circuit block, can realize the circuit connection structure of excellent connection reliability simultaneously.
In addition, the invention provides a kind of circuit member connecting method, wherein, under the state that makes the relative configuration of the 1st circuit electrode with the 2nd circuit electrode, to at thickness being the 1st circuit block that has formed the 1st circuit electrode on the interarea of the 1st circuit substrate below the 0.3mm, it at thickness the 2nd circuit block that has formed the 2nd circuit electrode on the interarea of the 2nd circuit substrate below the 0.3mm, and be disposed at circuit connecting adhesive film of the present invention between the 1st circuit block and the 2nd circuit block and heat and pressurize, thereby the 1st circuit electrode and the 2nd circuit electrode are electrically connected.
If such circuit member connecting method, then owing in the connection of circuit block, used the cured article of circuit connecting adhesive film of the present invention, therefore the internal stress in the cured article can be suppressed for lower, and can fully guarantee electroconductibility between comparative electrode.Therefore, can form and to suppress the circuit block distortion, have the circuit connection structure of good connection reliability simultaneously.
In addition, the invention provides a kind of bonding film and be used for the purposes that circuit connects, this bonding film possesses the conductive adhesive layer that contains adhesive composite and conducting particles, with contain adhesive composite but do not contain the insulativity bond layer of conducting particles, wherein, it is 40～70 ℃ film forming material that the adhesive composite that contains in the conductive adhesive layer comprises (a) second-order transition temperature, (b) Resins, epoxy and (c) potentiality solidifying agent, and this bonding film is used for the 1st circuit block that formed the 1st circuit electrode on the interarea of the 1st circuit substrate below the 0.3mm with at thickness being, with at thickness be the 2nd circuit block that has formed the 2nd circuit electrode on the interarea of the 2nd circuit substrate below the 0.3mm, be electrically connected making under the 1st circuit electrode state relative with the 2nd circuit electrode.
Connected by should bonding film being used for circuit,, also can suppress the distortion of circuit block, can obtain good connection reliability simultaneously even when then being used to possess thickness and being each other the connection of circuit block of the following circuit substrate of 0.3mm.
When should bonding film being used for circuit and connecting, its conductive adhesive layer and/or insulativity bond layer can further contain (d) insulativity particle, thus, can keep more excellent connection reliability.
According to the present invention, even can provide a kind of when being used to connect thin glass substrate of thickness ratio circuit substrate in the past and semiconductor element, also can keep excellent connection reliability, can suppress simultaneously the distortion of glass substrate, and circuit connecting adhesive film that film-forming properties is also excellent and uses thereof, and circuit connection structure and manufacture method and the circuit member connecting method of using this bonding film.Particularly in the present invention, be circuit block below the 0.3mm each other the time even can provide a kind of connecting thickness, also can realize the circuit connecting adhesive film of above-mentioned effect.
Description of drawings
Fig. 1 is the pattern sectional view of the circuit connecting adhesive film of expression an embodiment of the invention.
Fig. 2 is the pattern sectional view that expression makes the multilayer body of circuit connecting adhesive film between a pair of circuit block of present embodiment.
Fig. 3 is the pattern sectional view of the circuit connection structure of expression present embodiment.
Fig. 4 is the pattern sectional view of the evaluation method of expression glass substrate warpage.
Nomenclature
1... substrate, 1a... glass substrate, 1b... wiring diagram, 2... semiconductor element, 2a...IC chip, 2b... projected electrode, 3a... insulativity bond layer, 3b... conductive adhesive layer, 4a, 4b... adhesive composite, 5... conducting particles, 6a, 6b... cured article, 10... circuit connecting adhesive film, 100... circuit connection structure, 200... multilayer body.
Embodiment
Below, as required, Yi Bian with reference to accompanying drawing, Yi Bian preferred implementation of the present invention is elaborated.But the present invention is not limited to following embodiment.
＜circuit connecting adhesive film 〉
At first, with reference to Fig. 1, the circuit connecting adhesive film 10 of present embodiment is described.Fig. 1 is the pattern sectional view of the circuit connecting adhesive film of expression an embodiment of the invention.Circuit connecting adhesive film 10 possesses the conductive adhesive layer 3b that contains adhesive composite 4b and conducting particles 5, and on conductive adhesive layer 3b insulativity bond layer 3a that form, that contain adhesive composite 4a.
(conductive adhesive layer)
Conductive adhesive layer 3b contains adhesive composite 4b and conducting particles 5, this adhesive composite 4b comprise (a) Tg be 40～70 ℃ film forming material (below, be sometimes referred to as " (a) composition "), (b) Resins, epoxy (below, be sometimes referred to as " (b) composition ") and (c) potentiality solidifying agent (below, be sometimes referred to as " (c) composition ").
As the Tg of (a) composition is that 40～70 ℃ film forming material is to have the polymkeric substance that makes aqueous curable resin composition solidification.By in curable resin composition, containing film forming material, curable resin composition is being shaped to when membranaceous, can obtain being not easy cracking, broken, be clamminess and easy to handle adhesive film.
As this film forming material, can enumerate at least a kind of polymkeric substance that for example is selected from phenoxy resin, vinyl-formal resin, polystyrene resin, polyvinyl butyral resin, vibrin, polyamide resin, xylene resin and the urethane resin.Among these, preferred phenoxy resin, urethane resin and polyvinyl butyral resin.They and (b) the consistency excellence of composition, and can give cementability, thermotolerance, the physical strength of circuit connecting adhesive film 10 excellences after the curing.
Phenoxy resin can by make 2 officials can phenols and epihalohydrins react to high molecular or make 2 officials can Resins, epoxy and 2 officials can phenols generation polyaddition reaction obtain.Particularly, can by make 1 mole of 2 official can phenols and 0.985～1.015 mole of epihalohydrins in the presence of catalyzer such as alkali metal hydroxide in non-reactive solvent, under 40～120 ℃ temperature, react and obtain.
For the polyaddition reaction that obtains phenoxy resin, preferably making 2 functionality Resins, epoxy is that carry out epoxy group(ing)/phenolic hydroxyl group=1/0.9～1/1.1 with the equivalence ratio that cooperates of 2 functionality phenols.Thus, can make the mechanical characteristics and the thermal property of the circuit connecting adhesive film 10 after the curing good.In addition, this polyaddition reaction is preferably in the presence of catalyzer such as alkali metal compound, organophosphorus based compound, cyclic amine based compound, in boiling point is organic solvents such as acid amides system, ether system, ketone system, lactone system, alcohol system more than 120 ℃, making the raw material solid composition is below 50 mass parts, is heated to 50～200 ℃ and carry out.
As the 2 officials energy Resins, epoxy that is used to obtain phenoxy resin, can enumerate for example bisphenol A type epoxy resin, bisphenol f type epoxy resin, dihydroxyphenyl propane D type Resins, epoxy, bisphenol-s epoxy resin, xenyl diglycidylether and methyl substituted xenyl diglycidylether.As 2 officials energy phenols, can enumerate material with 2 phenol hydroxyls, for example, bisphenols such as hydroquinones, dihydroxyphenyl propane, Bisphenol F, dihydroxyphenyl propane D, bisphenol S, bisphenol fluorene, methyl substituted bisphenol fluorene, dihydroxybiphenyl and methyl substituted dihydroxybiphenyl.
Phenoxy resin can also carry out modification by free-radical polymerised functional group or other reactive compounds.Above-mentioned various phenoxy resin can use separately or be used in combination of two or more.
Urethane resin is the elastomerics that has amino-formate bond in the molecular chain, and normally to making polyprotonic acid (terephthalic acid, m-phthalic acid, phthalic acid, succsinic acid, hexanodioic acid, nonane diacid, sebacic acid etc.) with dibasic alcohol (ethylene glycol, 1, the 4-butyleneglycol, 1, the 5-pentanediol, 1, the 6-hexylene glycol, Diethylene Glycol, triethylene glycol, polyoxyethylene glycol, propylene glycol etc.) carry out the saturated polyester resin with terminal hydroxyl of condensation reaction gained, make its active hydrogen and diisocyanate cpd (toluene support vulcabond, diphenylmethanediisocyanate, hexamethylene diisocyanate, the xylylene vulcabond, cyclohexyl-methane vulcabond etc.) isocyanate group is reacted the wire polymer of gained with equivalent roughly.
This urethane resin is dissolved in organic solvent easily, for example in ester system (ethyl acetate, butylacetate etc.), ketone system (methylethylketone, pimelinketone, acetone etc.), fragrant family (toluene, dimethylbenzene, benzene etc.) and chlorine system (trieline, methylene dichloride etc.) solvent.
Polyvinyl butyral resin is to have the unitary elastomerics of vinyl acetal in molecular chain, normally with the laggard capable alkaline purification of vinyl acetate polyisocyanate polyaddition, makes itself and aldehyde (formaldehyde, acetaldehyde, propionic aldehyde, butyraldehyde etc.) reaction then and the wire polymer that obtains.For polyvinyl butyral resin used in the present embodiment, preferred degree of polymerization is 700～2500, and the butyralization degree is more than the 65mol%.
If the polymerization degree is less than 700, the cohesive force deficiency of polyvinyl butyral resin then, film-forming properties descends.If the polymerization degree surpasses 2500, the Resin Flow deficiency during the resin crimping then, conducting particles can't be difficult to obtain sufficient connection reliability successfully between between the electrode of adherend.In addition, if the butyralization degree less than 65mol%, then the ratio of hydroxyl or ethanoyl increases, and is difficult to obtain sufficient connection reliability.
Tg as the film forming material of (a) composition is 40～70 ℃, more preferably 45～70 ℃, and more preferably 50～70 ℃.If have the film forming material of this Tg, then, reduced the amount of warpage of circuit block, thereby can obtain good connection reliability owing to absorbed the internal stress that is produced because of in the circuit connecting adhesive film 10 of recoverable deformation after curing.
The use level of film forming material, total mass 100 mass parts with respect to adhesive composite 4b are preferably 10～50 mass parts, more preferably 20～40 mass parts.Be in this scope by the amount that makes film forming material, the further distortion that suppresses base material (amount of warpage) can be provided, and the more excellent circuit connecting adhesive film 10 of electrical connectivity.
The molecular weight of film forming material is big more, and the then easy more film-forming properties that obtains can be set in the melt viscosity that influences adhesive composite 4b flowability in the wide scope in addition.Weight-average molecular weight (Mw) as film forming material is preferably 5000～150000, is preferably 10000～80000 especially.If this value is more than 5000, the tendency that is easy to obtain good filming is then arranged, on the other hand,, the tendency that obtains easily with the excellent compatibility of other composition is arranged then if be below 150000.
In addition, above-mentioned " weight-average molecular weight " is according to the condition shown in the following table 1, the value of using the polystyrene standard calibration curve to be measured by gel permeation chromatography (GPC).
Table 1
Resins, epoxy as (b) composition, may be used singly or two or more in combination: Epicholorohydrin and at least a institute deutero-bisphenol-type epoxy resin that is selected among dihydroxyphenyl propane, Bisphenol F and the dihydroxyphenyl propane D etc., one or both institute deutero-epoxy group(ing) novolac resin in Epicholorohydrin and phenol novolac resin and the cresols novolac resin, having the naphthalene that contains the naphthalene nucleus skeleton is Resins, epoxy, and the various epoxy compoundss that have the glycidyl more than 2 at 1 intramolecularly of glycidyl amine, glycidyl ether, biphenyl, ester ring type etc. etc.Consider that from preventing electromigratory viewpoint Resins, epoxy preferably uses foreign ion (Na
+, Cl
-Deng), water-disintegrable chlorine etc. is reduced to the high purity article below the 300ppm.
In above-mentioned Resins, epoxy, owing to can extensively obtain the different grade of molecular weight, can set cementability and reactivity etc. arbitrarily, therefore preferred bisphenol-type epoxy resin.In bisphenol-type epoxy resin, preferred especially bisphenol f type epoxy resin.The viscosity of bisphenol f type epoxy resin is low, and by being used in combination with phenoxy resin, can be easily the flowability of circuit connecting adhesive film 10 be set at wide scope.In addition, bisphenol f type epoxy resin also has the advantage that is easy to give circuit connecting adhesive film 10 good bonding.
The use level of Resins, epoxy, total mass 100 mass parts with respect to adhesive composite 4b are preferably 5～50 mass parts, more preferably 20～40 mass parts.When the use level of Resins, epoxy during less than 5 mass parts, have circuit block each other during crimping, the tendency that the flowability of circuit connecting adhesive film 10 descends when surpassing 50 mass parts, has the tendency of circuit connecting adhesive film 10 generation distortion when long-term keeping.
As the potentiality solidifying agent of (c) composition, can enumerate for example imidazoles system, hydrazides system, amine imide and dicyano diamide.They can use separately or be used in combination of two or more.Further, can also be with combinations such as potentiality solidifying agent and decomposition accelerating agent, inhibitor.In addition, in order to extend the expiration date, preferred micro encapsulation with lining potentiality solidifying agent such as the polymer substance of polyurethane series, polyester system.
The use level of potentiality solidifying agent with respect to Resins, epoxy 100 mass parts, is preferably 10～200 mass parts, more preferably 100～150 mass parts.Thus, can in curing reaction, obtain sufficient reactivity.When the use level of potentiality solidifying agent during less than 10 mass parts, have and can't obtain sufficient reactivity, be difficult to obtain good bonding strength and the tendency that is connected resistance.If the use level of potentiality solidifying agent surpasses 200 mass parts, the flowability that then has circuit connecting adhesive film 10 descends, and connects resistance and rises tendencies such as the validity period shortening of circuit connecting adhesive film 10.
Be dispersed with conducting particles 5 among the adhesive composite 4b.By in circuit connecting adhesive film 10, containing conducting particles 5, can absorb the position of circuit electrode or the deviation of height by the distortion of conducting particles 5, increase contact area, therefore can obtain more stable electrical connection.In addition, by containing conducting particles 5 in circuit connecting adhesive film 10, the zone of oxidation that conducting particles 5 can be broken through the circuit electrode surface sometimes produces with passive layer and contacts the further stabilization that can seek to be electrically connected.
As this conducting particles 5, can enumerate metallicss such as Au, Ag, Ni, Cu, scolding tin or carbon particles etc.Consider that from the viewpoint that obtains abundant validity period the outermost layer of conducting particles 5 is not transition metal-types such as Ni, Cu, and is preferably the precious metal of Au, Ag, platinum, wherein more preferably Au.In addition, conducting particles 5 also can be the material with the surface of transition metal-types such as precious metal such as Au linings Ni, can also be the conductting layer etc. of the above-mentioned metal of lining etc. on dielectric glass, pottery, plastics etc. and form, to make outermost layer be the material of precious metal.
As conducting particles 5, preferably use on plastics lining conductting layer etc. and the particle or the hot molten metal particle that form.Because these particles have deformability by heating and pressurizeing, therefore can increase when connecting and the contact area of circuit electrode, maybe can absorb the circuit terminal thickness deviation of circuit block, can improve the reliability that circuit connects.
Be arranged on the thickness of conducting particles 5 outermost precious metal coatings, be preferably
More than.Thus, can fully reduce resistance between the circuit of connection.But when the precious metal coating was set on transition metal such as Ni, this thickness was preferably
More than.This be because, the precious metal coating that is produced when the blending dispersion because of conducting particles 5 damaged etc., transition metal such as Ni are exposed in the adhesive film, thereby, cause the storage stability of circuit connecting adhesive film 10 to descend by because the redoxomorphism of this transition metal produces free free radical.On the other hand, the upper limit of the thickness of precious metal coating is not particularly limited, but considers that from the manufacturing cost viewpoint hope is below the 1 μ m.
The median size of conducting particles 5 must be less than the minimum interval of the adjacent electrode of the circuit block that is connected by circuit connecting adhesive film 10, and when having the height tolerance of circuit electrode, is preferably greater than this height tolerance.The median size of conducting particles 5 is preferably 1～10 μ m, more preferably 2～5 μ m.If median size then has the height tolerance that can't tackle circuit electrode less than 1 μ m, the tendency that the electroconductibility between circuit electrode is easy to descend if surpass 10 μ m, then has the tendency that is easy to descend in abutting connection with the insulativity between circuit electrode.
In addition, above-mentioned " median size " value of being meant as follows to be measured.That is to say that (SEM, (strain) Hitachi company makes, the goods name: S-800) observe the primary particle of (multiplying power: 5000 times) optional conducting particles, measure its maximum particle diameter and minimum grain size to use electronic scanning type microscope.With the square root of this maximum particle diameter and minimum grain size product primary particle size as this particle.And, to optional 50 conducting particless, measure primary particle size as described above, and with this mean value as median size.In addition, also similarly measure the median size of (d) described later insulativity particle.
The use level of conducting particles 5, total mass 100 mass parts with respect to adhesive composite 4b preferably are made as 0.1～30 mass parts, more preferably are made as 0.1～20 mass parts.Thus, can prevent that conducting particles 5 because of surplus from causing in abutting connection with short circuit etc.
In addition, adhesive composite 4b can further contain for example additives such as tenderizer, anti-aging agent, fire retardant, pigment, thixotropic agent, silane coupling agent according to purposes.
(insulativity bond layer)
For the adhesive composite 4a that contains among the insulativity bond layer 3a, so long as can form membranaceous, and the material that can suppress the distortion of circuit block when circuit block connects gets final product, and can be identical or different with the adhesive composite 4b that contains among the conductive adhesive layer 3b.But the kind of mentioned component and use level preferably are adjusted to the flowability of the flowability of insulativity bond layer 3a greater than conductive adhesive layer 3b.
Conductive adhesive layer 3b and/or insulativity bond layer 3a can further contain (d) insulativity particle (below, be sometimes referred to as " (d) composition ").Thus, the internal stress in the bond layer after can further relaxing film and solidifying.In addition, more preferably insulativity bond layer 3a contains (d) insulativity particle.
As this (d) insulativity particle, can list for example inorganic particulate such as silicon-dioxide, aluminum oxide, or organic filler such as silicon rubber, MMB methyl methacrylate butadiene vinylbenzene (MBS), acrylic rubber, polymethylmethacrylate, polybutadiene rubber.
In addition, as (d) insulativity particle, except above-mentioned, for example can also enumerate by acrylic resin, polyester, urethane, polyvinyl butyral acetal, polyarylester (polyarylate), polystyrene, NBR, SBR and polysiloxane-modified resin etc. and comprise them as the formed particle of the multipolymer of composition.As the insulativity particle, preferred molecular weight is organic fine particles more than 1,000,000 or organic fine particles with three-dimensional crosslinking structure.This insulativity particle is dispersed high to solidification compound.In addition, the expression polymer chain has tridimensional network " to have three-dimensional crosslinking structure " herein, insulativity particle with this structure, for example, can obtain by using linking agent handle polymkeric substance with a plurality of reflecting points, wherein said linking agent have more than two can with this reflecting point bonded functional group.Molecular weight is the organic fine particles and the organic fine particles with three-dimensional crosslinking structure more than 1,000,000, and preferably the solvability to solvent is all low.These insulativity particles low to the solvability of solvent can obtain above-mentioned effect more significantly.In addition, consider that from the viewpoint that obtains above-mentioned effect more significantly molecular weight is that organic fine particles more than 1,000,000 and the organic fine particles with three-dimensional crosslinking structure are preferably by (methyl) alkyl acrylate-polysiloxane copolymer, polysiloxane-(methyl) acrylic copolymer or the formed insulativity particle of their mixture.In addition, as (d) composition, for example, can also use as insulativity particles such as the polyamic acid particle put down in writing in the TOHKEMY 2008-150573 communique and polyimide particles.
Further,, can also use to have hud typed structure, and in stratum nucleare and shell, form different insulativity particles as (d) composition.As hud typed insulativity organic filler, specifically, can enumerate with polysiloxane-acrylic rubber is the particle of nuclear and grafted propylene acid resin, and is the particle etc. of nuclear and grafted propylene acid resin with the acrylic copolymer.In addition, can also use as the world and disclose the core-shell type polysiloxane particulate of putting down in writing in No. 2009/051067 brochure, (methyl) alkyl acrylate-butadiene-styrene copolymer or the mixture of putting down in writing in No. 2009/020005 brochure disclosed as the world, insulativity organic fillers such as (methyl) alkyl acrylate-polysiloxane copolymer or mixture and polysiloxane-(methyl) acrylic copolymer or mixture, as the nucleocapsid structure polymer particle of putting down in writing in the TOHKEMY 2002-256037 communique, and as rubber particles of the nucleocapsid structure put down in writing in the TOHKEMY 2004-18803 communique etc.These hud typed insulativity particles can use a kind separately, also can will be used in combination more than 2 kinds in addition.In addition, for this (d) insulativity particle, its median size is preferably about 0.01～2 μ m.
When conductive adhesive layer 3b contains (d) insulativity particle, (d) the total use level of insulativity particle and conducting particles 5, total mass 100 mass parts with respect to adhesive composite 4b are preferably below 80 mass parts, more preferably below 60 mass parts.If the total use level of insulativity particle and conducting particles surpasses 80 mass parts, then have the tendency of the closing force decline of film-forming properties and counter electrode.In addition, when insulativity bond layer 3a contains (d) insulativity particle, (d) use level of insulativity particle, total mass 100 mass parts with respect to adhesive composite 4a are preferably below 60 mass parts, more preferably below 40 mass parts.If the use level of insulativity particle surpasses 60 mass parts, then have the tendency of the closing force decline of film-forming properties and conducting particles 5 counter electrode.
The thickness of conductive adhesive layer 3b is preferably 3～12 μ m, more preferably 5～10 μ m.In addition, the thickness of insulativity bond layer 3a is preferably 12～20 μ m, more preferably 14～16 μ m.By making each layer have such thickness, can keep operability, conducting particles seizure property and connection reliability well.
And then the thickness of circuit connecting adhesive film 10 is preferably 10～40 μ m.When this thickness during less than 10 μ m, then have the space between the landfill adherend fully, the tendency that bonding force descends, if surpass 40 μ m, resin overflows when then having crimping, pollutes the tendency of circumferential component.
The formation of conductive adhesive layer 3b and insulativity bond layer 3a, can be by will for conductive adhesive layer 3b, comprising the mixture of adhesive composite 4b and conducting particles 5, and the mixture that for insulativity bond layer 3a, comprises adhesive composite 4a, dissolve respectively or be dispersed in the organic solvent, make their aqueousization and modulate coating fluid, this coating fluid for example is coated on the separability base material (supporting film), below the active temperature of solidifying agent, removes and desolvate and carry out.
As other method that forms conductive adhesive layer 3b and insulativity bond layer 3a, can enumerate the constituent of difference electric conduction of heating bond layer 3b and insulativity bond layer 3a, after guaranteeing flowability, add solvent, form coating fluid, and be coated on the separability base material, below the active temperature of solidifying agent, remove the method for desolvating.
For at this moment used solvent, consider optimization aromatic hydrocarbon system solvent and the mixed solvent that contains the oxygen series solvent from the deliquescent viewpoint that improves adhesive composite 4a and 4b.In addition, as the separability base material, for example, can enumerate the polymeric film that polyethylene terephthalate (PET), polypropylene, polyethylene, polyester etc. have thermotolerance and solvent resistance.Thereby being particularly suitable for using has carried out surface treatment and has had PET film of release property etc.
The thickness of separability base material is preferably 20～75 μ m.When this thickness during less than 20 μ m, reluctant tendency when having interim crimping if surpass 75 μ m, then has and produce the tendency of twining between circuit connecting adhesive film 10 and separability base material.
As the method for making of circuit connecting adhesive film 10, for example, can adopt, or be coated with the known methods such as method of each layer successively as above formed conductive adhesive layer 4b and the stacked method of insulativity bond layer 4a.
The circuit connecting adhesive film of present embodiment can as wait in the installation at COG (Chip On Glass), substrate that junction of glass etc. is harder and the anisotropic conductive caking agent of semiconductor element.
For example, the circuit connecting adhesive film is heated under the state between the circuit blocks such as glass substrate and semiconductor element and pressurizeing, thereby the circuit electrode that both are had is electrically connected to each other.Herein, during as the circuit block below the 0.3mm, warpage is a problem especially, in this case, can use the circuit connecting adhesive film of present embodiment especially effectively at the thickness that uses substrate.
That is to say, bonding film can be used for making under the 1st circuit electrode state relative with the 2nd circuit electrode, make the 1st circuit block that on thickness is the interarea of the 1st circuit substrate below the 0.3mm, has formed the 1st circuit electrode, with be to have formed the circuit that the 2nd circuit block of the 2nd circuit electrode is electrically connected on the interarea of the 2nd circuit substrate below the 0.3mm to be connected at thickness, wherein said bonding film possesses the conductive adhesive layer that contains adhesive composite and conducting particles, with contain adhesive composite but do not contain the insulativity bond layer of conducting particles, and the adhesive composite that contains in the conductive adhesive layer to comprise (a) second-order transition temperature be 40～70 ℃ film forming material, (b) Resins, epoxy and (c) potentiality solidifying agent.
In addition, during as the parts below the 0.2mm, it is more remarkable that warpage issues becomes at the thickness that further uses substrate.As the lower limit of the thickness of the circuit substrate of the circuit connecting adhesive film that can use present embodiment, just no problem as long as can keep separately physical strength, be preferably more than the 0.05mm, more preferably more than the 0.08mm.
In circuit blocks such as glass substrate and semiconductor element, a plurality of (sometimes can for single) circuit electrode can be set usually.At least a portion of set circuit electrode disposes relatively in the circuit block with configuration relatively, and the circuit connecting adhesive film is heated under the state between the circuit electrode of relative configuration and pressurizeing, thereby the circuit electrode of relative configuration is electrically connected to each other, obtains circuit connection structure.
Thus, heat and pressurize, thereby the circuit electrode that makes relative configuration each other, is electrically connected with a kind of situation that directly contacts or two kinds of situations by the contact across conducting particles by circuit block to relative configuration.
＜circuit connection structure 〉
Fig. 2 be expression make present embodiment circuit connecting adhesive film 10 between a pair of circuit block, be the pattern sectional view of the multilayer body 200 between substrate 1 and the semiconductor element 2, Fig. 3 is that expression is heated multilayer body shown in Figure 2 200 and the pattern sectional view of the circuit connection structure 100 of the present embodiment of the gained that pressurizes.
Herein, wiring diagram 1b is preferably formed by the transparent conductivity material.As the transparent conductivity material, typically can use ITO (tin indium oxide).In addition, projected electrode 2b is formed by the material of the electroconductibility with the degree that can be used as electrode and work (be preferably be selected among gold and silver, tin, platinum metals and the ITO at least a).
In circuit connection structure 100, relative projected electrode 2b and wiring diagram 1b are electrically connected by conducting particles 5 each other.That is, conducting particles 5 is electrically connected by directly contacting with wiring diagram 1b with projected electrode 2b.
Sort circuit syndeton body 100 can be made by following operation.That is to say, can make by following manufacture method, described manufacture method comprises that the circuit connecting adhesive film that makes present embodiment has formed the substrate 1 (the 1st circuit block) of wiring diagram 1b (the 1st circuit electrode) and is to have formed on the interarea of the IC chip 2a (the 2nd circuit substrate) below the 0.3mm between a pair of circuit block of semiconductor element 2 (the 2nd circuit block) of projected electrode 2b (the 2nd circuit electrode) at thickness between possessing on thickness is the interarea of the glass substrate 1a (the 1st circuit substrate) below the 0.3mm, obtain the operation of multilayer body, with by multilayer body being heated and pressurizeing, the circuit connecting adhesive film is solidified, thereby form between a pair of circuit block, so that the operation of the bonding a pair of circuit block of the mode connection section each other that the wiring diagram 1b (the 1st circuit electrode) of relative configuration and projected electrode 2b (the 2nd circuit electrode) are electrically connected.
＜circuit member connecting method 〉
In the method, can heat and pressurize formed circuit connecting adhesive film 10 on the separability base material under the state that fit on the substrate 1, interim crimping circuit connecting adhesive film 10, and peel off the separability base material, the circuit electrode position is overlapped, after on one side placing semiconductor element 2, heat and pressurize, the multilayer body 200 of substrate 1, circuit connecting adhesive film 10 and semiconductor element 2 of having prepared successively lamination.
To the condition that above-mentioned multilayer body 200 heats and pressurizes, can suitably modulate according to adhesive composite 4a in the circuit connecting adhesive film 10 and the solidified nature of 4b etc., thereby make 10 curing of circuit connecting adhesive film and obtain sufficient adhesion strength.
Even circuit member connecting method according to the circuit connecting adhesive film that uses present embodiment when the thin thickness (below the 0.3mm) of circuit block, also can suppress the warpage of circuit block, obtains good connection reliability.
[embodiment]
Below, enumerate embodiment, the present invention is carried out more specific description.But the present invention is not limited to these embodiment.
(1) preparation of circuit connecting adhesive film
Prepare to be used to make each material of conductive adhesive layer and insulativity bond layer as described below.In addition, each film forming material of the about 10mg of weighing uses the DSC device that TA Instruments company makes (goods name: Q1000) and according to the regulation of JIS K7121-1987, measure the Tg of film forming material.
(a) composition: Tg is 40～70 ℃ a film forming material
" FX-316 " (Dongdu changes into manufacturing, the goods name): phenoxy resin (Tg:66 ℃)
" UR-4125 " (Japan's spinning is made the goods name): polyester-polyurethane (Tg:68 ℃)
" UR-1350 " (Japan's spinning is made the goods name): polyester-polyurethane (Tg:46 ℃)
" 3000-K " (the goods name is made in electrochemical industry): polyvinyl butyral acetal (Tg:64 ℃)
(a) ' composition: (a) film forming material beyond the composition
" UR-8300 " (Japan's spinning is made the goods name): polyester-polyurethane (Tg:23 ℃)
" ZX-1356-2 " (Dongdu changes into manufacturing, the goods name): phenoxy resin (Tg:75 ℃)
" PKHC " (InChem makes, the goods name): phenoxy resin (Tg:89 ℃)
" 5000-D " (the goods name is made in electrochemical industry): polyvinyl butyral acetal (Tg:110 ℃)
" YP-50 " (Dongdu changes into manufacturing, the goods name): phenoxy resin (Tg:97 ℃)
(b) composition: Resins, epoxy
" 850-S " (DIC makes, the goods name): bisphenol A type epoxy resin
(c): the potentiality solidifying agent
" Novacure (ノ バ キ ユ ア) " (Asahi Chemical Industry's chemistry is made the goods name)
(d): the insulativity particle
" X-52-7030 " (SHIN-ETSU HANTOTAI's organosilicon is made, the goods name): silicone composites (mixture of silicon rubber and polyorganosiloxane resin)
(conducting particles)
" Micro pearl (ミ Network ロ パ one Le) AU " (the ponding chemistry is made the goods name)
(additive)
" SH6040 " (eastern beautiful DOW CORNING manufacturing, goods name): silane coupling agent
(embodiment 1)
＜conductive adhesive layer 〉
After bisphenol A type epoxy resin " 850-S ", 40 mass parts potentiality solidifying agent " Novacure " and the 1 mass parts silane coupling agent " SH6040 " of 10 mass parts phenoxy resins " FX-316 ", 30 mass parts be dissolved in 100 mass parts toluene, add 19 mass parts conducting particless " Micro pearl AU ", modulation conductive adhesive layer forms uses coating fluid.
(the smart machine of (strain) Kang Jing company makes to use apparatus for coating, goods name: accurate coating machine), it is on the PET film of 50 μ m that this coating fluid is coated on the thickness of having implemented demoulding processing (middle lift-off processing) on the one side (face of coating coating fluid), and 70 ℃ of following warm air dryings 10 minutes, forming thickness thus on the PET film was the conductive adhesive layer of 10 μ m.
＜insulativity bond layer 〉
After 52 mass parts phenoxy resins " FX-316 ", 26 mass parts bisphenol A type epoxy resins " 850-S ", 18 mass parts potentiality solidifying agent " Novacure " and 1 mass parts silane coupling agent " SH6040 " be dissolved in the toluene of 100 mass parts as solvent, add 3 mass parts granular of polyorganosiloxane " X-52-7030 ", modulation insulativity bond layer forms uses coating fluid.
With similarly above-mentioned, (the smart machine of (strain) Kang Jing company makes to use apparatus for coating, goods name: accurate coating machine), it is on the PET film of 50 μ m that this coating fluid is coated on the thickness of having implemented demoulding processing on the one side, and 70 ℃ of following warm air dryings 10 minutes, forming thickness thus on the PET film was the insulativity bond layer of 15 μ m.
＜circuit connecting adhesive film 〉
For the conductive adhesive layer and the insulativity bond layer of above-mentioned gained, on one side 50 ℃ of heating down, carry out lamination with roll squeezer on one side, obtaining thickness is the circuit connecting adhesive film of 25 μ m.
(embodiment 2～6 and comparative example 1～5)
Except adding each composition with the cooperation ratio (mass parts) shown in the table 2, modulation conductive adhesive layer form with beyond the coating fluid and embodiment 1 similarly operate making circuit connecting adhesive film.
Table 2
(2) making of circuit connection structure
The preparation of＜substrate and semiconductor element 〉
As substrate, prepare on the surface of glass substrate (Corning#1737,38mm * 28mm, thickness are 0.3mm), to have formed the substrate of ITO (Indium Tin Oxide) wiring diagram (pattern width is 50 μ m, and the electrode interbody spacer is 5 μ m).As semiconductor element, prepare IC chip (profile is 17mm * 17mm, and thickness is 0.3mm, and projection is of a size of 50 μ m * 50 μ m, and the projection interbody spacer is 50 μ m, and rising height is 15 μ m).
Being connected of＜substrate and semiconductor element 〉
Use the circuit connecting adhesive film of making in the foregoing description and the comparative example, and as follows carrying out being connected of IC chip and glass substrate.In addition, in connection, use by the formed platform of ceramic heater (150mm * 150mm) and instrument (Star one Le) (the heating crimping utensil of 3mm * 20mm) constituted.
At first, stripper circuit connecting adhesive film (the PET film on the conductive adhesive layer of 1.5mm * 20mm), and by at 80 ℃, 0.98MPa (10kgf/cm
2) condition under heat and pressurizeed for 2 seconds, the conductive adhesive aspect is sticked on the glass substrate.Then, PET film on the insulativity bond layer of stripper circuit connecting adhesive film, and after the position of projection of carrying out the IC chip and glass substrate overlaps, actual measurement at the circuit connecting adhesive film is up under the condition of 190 ℃ of Da Wendu and projected electrode area reduced pressure 70MPa, carry out the heating and the pressurization in 10 seconds from IC chip top, the insulativity bond layer is sticked on the IC chip, carry out chip and the formal of glass substrate is connected by the circuit connecting adhesive film.
(3) estimate
(film-forming properties)
To the circuit connecting adhesive film of making, based on following benchmark evaluation film-forming properties.In addition, " can film forming " mean the film of made be not easy cracking, broken, be clamminess.The evaluation result of film-forming properties is shown in table 2.
A: can film forming
B: can't film forming
(warpage)
Fig. 4 is the pattern sectional view of the evaluation method of expression glass substrate warpage.Circuit connection structure 100 shown in Figure 4 is made of substrate 1, semiconductor element 2 and solidified circuit connecting adhesive film 10 that their are engaged.L represents when the height below the substrate 1 of semiconductor element 2 centers is 0, the maximum value in from semiconductor element 2 centers to the height below the substrate 1 of 12.5mm.With L is the evaluation that index is carried out warpage.The value of L is more little, represents that then warpage is more little.Estimating with two grades, is " A " with the L value less than the average evaluation of 15 μ m, and is " B " with the average evaluation more than the 15 μ m.The evaluation result of warpage is shown in table 3.
In addition, in the making of circuit connection structure, respectively the thickness of glass substrate and IC chip is changed into 0.5mm from 0.3mm, and use the circuit connecting adhesive film of in the foregoing description and comparative example, making, to be connected, make conjugant with above-mentioned identical operation.When the conjugant to gained carried out the warpage evaluation, the warpage of arbitrary conjugant was less than 15 μ m.
(connection reliability)
The circuit connection structure of use is measured the circuit of glass substrate and the interelectrode resistance value of semiconductor element.Using volt ohm-milliammeter (device name: MLR21, ETAC company makes), is to measure after 85 ℃, humidity are 85%RH, 1000 hours THT test (Thermal Humidity Test) in temperature.Based on the resistance value after the THT test, according to following benchmark, with A or two grade evaluation connection reliability of B.The measurement result of each circuit connection structure is shown in table 3.
A: less than 10 Ω
More than the B:10 Ω
Table 3
Even circuit connecting adhesive film of the present invention is when being connected to each other of the circuit block that is used for thinner thickness, also all demonstrated excellent characteristic in the either side of film-forming properties, warpage and connection reliability.
Claims (7)
1. circuit connecting adhesive film, it possesses the conductive adhesive layer that contains adhesive composite and conducting particles and contains adhesive composite but do not contain the insulativity bond layer of conducting particles,
Wherein, it is 40～70 ℃ film forming material, (b) Resins, epoxy and (c) potentiality solidifying agent that the adhesive composite that contains in the described conductive adhesive layer comprises (a) second-order transition temperature,
And this circuit connecting adhesive film is used for the 1st circuit block that formed the 1st circuit electrode on the interarea of the 1st circuit substrate below the 0.3mm with at thickness being, with at thickness be the 2nd circuit block that has formed the 2nd circuit electrode on the interarea of the 2nd circuit substrate below the 0.3mm, be electrically connected making under described the 1st circuit electrode state relative with described the 2nd circuit electrode.
2. circuit connecting adhesive film according to claim 1, wherein said conductive adhesive layer and/or described insulativity bond layer further contain (d) insulativity particle.
3. circuit connection structure, it possess the 1st circuit block that on thickness is the interarea of the 1st circuit substrate below the 0.3mm, formed the 1st circuit electrode,
Be to have formed the 2nd circuit electrode on the interarea of the 2nd circuit substrate below the 0.3mm at thickness, and it is relative with described the 1st circuit electrode to be configured to described the 2nd circuit electrode, and make the 2nd circuit block that described the 2nd circuit electrode is electrically connected with described the 1st circuit electrode and
Connection section between described the 1st circuit block and described the 2nd circuit block,
Described connection section is the cured article of claim 1 or 2 described circuit connecting adhesive films.
4. the manufacture method of a circuit connection structure, it comprises makes claim 1 or 2 described circuit connecting adhesive films form the 1st circuit block of the 1st circuit electrode and be to have formed on the interarea of the 2nd circuit substrate below the 0.3mm between a pair of circuit block of the 2nd circuit block of the 2nd circuit electrode at thickness on thickness is the interarea of the 1st circuit substrate below the 0.3mm between possessing, obtain multilayer body operation and
By described multilayer body being heated and pressurizeing described circuit connecting adhesive film is solidified, thereby form between described a pair of circuit block so that the operation of the bonding described a pair of circuit block of the mode connection section each other that described the 1st circuit electrode of relative configuration and described the 2nd circuit electrode are electrically connected.
5. circuit member connecting method, wherein, under the state that makes the relative configuration of the 1st circuit electrode with the 2nd circuit electrode, to at thickness being the 1st circuit block that has formed the 1st circuit electrode on the interarea of the 1st circuit substrate below the 0.3mm, it at thickness the 2nd circuit block that has formed the 2nd circuit electrode on the interarea of the 2nd circuit substrate below the 0.3mm, and be configured in claim 1 between described the 1st circuit block and described the 2nd circuit block or 2 described circuit connecting adhesive films and heat and pressurize, thereby described the 1st circuit electrode and described the 2nd circuit electrode are electrically connected.
6. a bonding film is used for the purposes that circuit connects, and this bonding film possesses the conductive adhesive layer that contains adhesive composite and conducting particles and contains adhesive composite but do not contain the insulativity bond layer of conducting particles,
Wherein, it is 40～70 ℃ film forming material, (b) Resins, epoxy and (c) potentiality solidifying agent that the adhesive composite that contains in the described conductive adhesive layer comprises (a) second-order transition temperature,
And this bonding film is used for having formed the 1st circuit block of the 1st circuit electrode with at thickness being on the interarea of the 1st circuit substrate below the 0.3mm and be the 2nd circuit block that has formed the 2nd circuit electrode on the interarea of the 2nd circuit substrate below the 0.3mm at thickness, is electrically connected making under described the 1st circuit electrode state relative with described the 2nd circuit electrode.
7. purposes according to claim 6, wherein said conductive adhesive layer and/or described insulativity bond layer further contain (d) insulativity particle.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010135321 | 2010-06-14 | ||
| JP2010-135321 | 2010-06-14 | ||
| JP2011-111530 | 2011-05-18 | ||
| JP2011111530A JP5223946B2 (en) | 2010-06-14 | 2011-05-18 | Adhesive film for circuit connection, circuit connection structure using the same, and circuit member connection method |
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| Publication Number | Publication Date |
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| CN102295893A true CN102295893A (en) | 2011-12-28 |
| CN102295893B CN102295893B (en) | 2014-12-31 |
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| CN201110162356.1A Active CN102295893B (en) | 2010-06-14 | 2011-06-13 | Circuit connecting adhesive film and use thereof, structure body, manufacturing method and connection method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103489500A (en) * | 2012-06-11 | 2014-01-01 | 三星电机株式会社 | Conductive paste composition for external electrode and multilayer ceramic electronic component fabricated using the same |
| CN110325365A (en) * | 2017-01-16 | 2019-10-11 | 通用汽车环球科技运作有限责任公司 | The method of adhesive composition, component and forming member |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003045235A (en) * | 2001-07-27 | 2003-02-14 | Mitsui Chemicals Inc | Anisotropy conductive paste |
| WO2009051067A1 (en) * | 2007-10-18 | 2009-04-23 | Hitachi Chemical Company, Ltd. | Adhesive composition, circuit connecting material using the adhesive composition, method for connecting circuit member, and circuit connecting body |
| CN101688090A (en) * | 2007-06-18 | 2010-03-31 | 3M创新有限公司 | Colored acrylic adhesive and marking film |
| WO2010047374A1 (en) * | 2008-10-22 | 2010-04-29 | 日立化成工業株式会社 | Adhesive film |
-
2011
- 2011-06-13 CN CN201110162356.1A patent/CN102295893B/en active Active
- 2011-06-13 KR KR1020110056868A patent/KR20110136731A/en not_active Application Discontinuation
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003045235A (en) * | 2001-07-27 | 2003-02-14 | Mitsui Chemicals Inc | Anisotropy conductive paste |
| CN101688090A (en) * | 2007-06-18 | 2010-03-31 | 3M创新有限公司 | Colored acrylic adhesive and marking film |
| WO2009051067A1 (en) * | 2007-10-18 | 2009-04-23 | Hitachi Chemical Company, Ltd. | Adhesive composition, circuit connecting material using the adhesive composition, method for connecting circuit member, and circuit connecting body |
| WO2010047374A1 (en) * | 2008-10-22 | 2010-04-29 | 日立化成工業株式会社 | Adhesive film |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103489500A (en) * | 2012-06-11 | 2014-01-01 | 三星电机株式会社 | Conductive paste composition for external electrode and multilayer ceramic electronic component fabricated using the same |
| CN110325365A (en) * | 2017-01-16 | 2019-10-11 | 通用汽车环球科技运作有限责任公司 | The method of adhesive composition, component and forming member |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102295893B (en) | 2014-12-31 |
| KR20110136731A (en) | 2011-12-21 |
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