CN102291058A - Semiconductor temperature difference power generating device and illuminating lamp - Google Patents
Semiconductor temperature difference power generating device and illuminating lamp Download PDFInfo
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- CN102291058A CN102291058A CN2011102379860A CN201110237986A CN102291058A CN 102291058 A CN102291058 A CN 102291058A CN 2011102379860 A CN2011102379860 A CN 2011102379860A CN 201110237986 A CN201110237986 A CN 201110237986A CN 102291058 A CN102291058 A CN 102291058A
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Abstract
The invention provides a semiconductor temperature difference power generating device and an illuminating lamp. The device comprises a heat absorber, a heat radiator, a semiconductor power generating chip and a voltage boosting circuit, wherein the heat absorber comprises a heat-absorbing part and a heat-transferring part; the heat-absorbing part is used for being in contact with a liquid heat source and absorbing heat from the liquid heat source; the heat-transferring part is used for transferring the heat absorbed by the heat-absorbing part; the heat radiator is positioned outside the liquid heat source and is arranged on the heat-transferring part of the heat absorber; the semiconductor power generating chip is located between the heat-transferring part of the heat absorber and the heat radiator; the heat end of the semiconductor power generating chip is connected with the heat-transferring part; the cold end of the semiconductor power generating chip is connected with the heat radiator; and the voltage boosting circuit is connected with the voltage output end of the semiconductor power generating chip and is used for carrying out boosting operation on a voltage value output by the semiconductor power generating chip. The semiconductor temperature difference power generating device is additionally provided with the voltage boosting circuit which is used for carrying out the boosting operation on the output voltage, thus a voltage value enough for a component to be driven is ensured to be provided and then the component is stably driven.
Description
Technical field
The embodiment of the invention relates to generation technology, relates in particular to a kind of semiconductor thermo-electric generation apparatus and illuminating lamp.
Background technology
The semiconductor temperature differential generating technology is utilized Seebeck (Seebeck) effect, in the hot junction and the cold junction formation temperature difference of semiconductor power-generating chip, thereby produces electric energy.In the prior art, the thermal source in hot junction that offers the semiconductor power-generating chip is varied, as the waste heat that produces in: heat of emitting when the candle flame of burning, fuel combustion and the various waste heat system, used heat (as: the automobile exhaust pipe heat of emitting, the used heat that flue is discharged etc.).
Is a kind of representative instance of semiconductor temperature differential generating with high-temp liquid as thermal source, and it is compared to other thermals source many advantages.But, also there is certain defective in the high-temp liquid that provides in the prior art as the semiconductor thermo-electric generation apparatus of thermal source: prior art adopts hot water as the high-temp liquid thermal source usually, but, even taked the insulation measure, owing to need consume heat energy when producing electric energy, therefore can cause hot water temperature's decline, cause the temperature in semiconductor power-generating chip hot junction to reduce, the temperature difference between hot junction and the cold junction constantly reduces.Make the output voltage of semiconductor thermo-electric generation apparatus unstable, can't realize providing stable and enough driving voltages to parts to be driven for a long time along with the variation of water temperature.
Summary of the invention
The embodiment of the invention provides a kind of semiconductor thermo-electric generation apparatus and illuminating lamp, so that provide stable and enough driving voltages for parts to be driven for a long time.
The embodiment of the invention provides a kind of semiconductor thermo-electric generation apparatus, comprising:
Heat dump comprises endothermic section and heat transfer part, and described endothermic section is used for contacting with the liquid thermal source, absorbs heat from this liquid thermal source, and described heat transfer part is used to conduct the heat that described absorbent portion absorbs;
Radiator is positioned at outside the described liquid thermal source, is arranged on the heat transfer part of described heat dump;
The semiconductor power-generating chip, between the heat transfer part and described radiator of described heat dump, the hot junction of described semiconductor power-generating chip connects described heat transfer part, and the cold junction of described semiconductor power-generating chip connects described radiator;
Booster circuit links to each other with the voltage output end of described semiconductor power-generating chip, is used for the magnitude of voltage of described semiconductor power-generating chip output is boosted.
The present invention also provides a kind of illuminating lamp, comprises LED, also comprises semiconductor thermo-electric generation apparatus provided by the present invention, and the voltage output end of described semiconductor power-generating chip links to each other with the voltage input end of described illuminating lamp by booster circuit.
Semiconductor thermo-electric generation apparatus that the embodiment of the invention provides and illuminating lamp, for with high-temp liquid as thermal source, dependence is stored in the temperature difference that forms between a large amount of heat energy in the high-temp liquid and the radiator, utilize semiconductor power-generating chip Seebeck effect to realize thermoelectric conversion output voltage, and the output voltage of power-generating chip is carried out boost operations by increasing booster circuit, assurance provides enough magnitudes of voltage for a long time for parts to be driven, to carry out stable driving, be specially adapted to the LED lighting.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art, to do one to the accompanying drawing of required use in embodiment or the description of the Prior Art below introduces simply, apparently, accompanying drawing in describing below is some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the structural representation of semiconductor thermo-electric generation apparatus embodiment one of the present invention;
Fig. 2 is the structural representation of semiconductor thermo-electric generation apparatus embodiment two of the present invention;
Fig. 3 is provided with the structural representation of liquid outlet for the bottom of the embodiment of the invention two described insulation closed containers;
Fig. 4 is provided with the structural representation of liquid outlet for the side of the embodiment of the invention two described insulation closed containers;
Fig. 5 is the structural representation of semiconductor thermo-electric generation apparatus embodiment three of the present invention;
Fig. 6 is the structural representation of semiconductor thermo-electric generation apparatus embodiment four of the present invention;
Fig. 7 is the structural representation of semiconductor thermo-electric generation apparatus embodiment five of the present invention;
Fig. 8 is the theory structure schematic diagram of illuminating lamp embodiment of the present invention.
Embodiment
For the purpose, technical scheme and the advantage that make the embodiment of the invention clearer, below in conjunction with the accompanying drawing in the embodiment of the invention, technical scheme in the embodiment of the invention is clearly and completely described, obviously, described embodiment is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills belong to the scope of protection of the invention not making the every other embodiment that is obtained under the creative work prerequisite.
Fig. 1 is the structural representation of semiconductor thermo-electric generation apparatus embodiment one of the present invention, and as shown in Figure 1, this device comprises: heat dump 20, radiator 30, semiconductor power-generating chip 40 and booster circuit 50.Wherein, heat dump 20 comprises endothermic section 21 and heat transfer part 22, and described endothermic section 21 is used for contacting with the liquid thermal source, absorbs heat from this liquid thermal source, and described heat transfer part 22 is used to conduct the heat that described absorbent portion 21 absorbs; Radiator 30 is positioned at outside the described liquid thermal source, is arranged on the heat transfer part 22 of described heat dump 20; Semiconductor power-generating chip 40 is between the heat transfer part 22 and described radiator 30 of described heat dump 20, and the hot junction of described semiconductor power-generating chip 40 connects described heat transfer part 22, and the cold junction of described semiconductor power-generating chip 40 connects described radiator 30.Booster circuit 50 links to each other with the voltage output end of semiconductor power-generating chip 40, is used for the magnitude of voltage of semiconductor power-generating chip 40 outputs is carried out boost operations.Booster circuit 50 specifically is to be connected in parallel between the both positive and negative polarity of semiconductor temperature differential generating chip voltage output, and as shown in Figure 1, the magnitude of voltage after booster circuit 50 boosts is used to export to parts to be driven, for example LED.
When generating electricity, this semiconductor thermo-electric generation apparatus can be arranged at a top that is mounted with the insulation closed container of liquid thermal source and carry out thermo-electric generation.
The described device of present embodiment as thermal source, relies on the thermal capacitance of high-temp liquid to store lot of energy realization thermo-electric generation at liquid internal with high-temp liquid, therefore can realize continuing generating.The technical scheme of present embodiment has been owing to increased booster circuit at voltage output end, thereby the magnitude of voltage of semiconductor power-generating chip output can be improved according to a certain percentage, for parts to be driven provide enough driving voltages.Generally, carry out the situation of semiconductor temperature differential generating with 50～100 ℃ of liquid as thermal source, the voltage range of semiconductor power-generating chip output is about 0.7～3.0V.For parts to be driven is the illuminating lamp of LED, preferably by the ratio of boosting of booster circuit is set, guarantees that the output voltage after boosting is 2～5V.Also can be in concrete the application according to the driving demand setting of other parts to be driven ratio of boosting, and can be by the parameter of booster circuit is set, the magnitude of voltage that output voltage stabilization is being set.
In the present embodiment, the equivalence input internal resistance that booster circuit 50 preferably is set equates with the internal resistance of semiconductor power-generating chip 40.Booster circuit 50 is made of each components and parts usually, with the high-temp liquid is the semiconductor thermo-electric generation apparatus of thermal source, it has bigger internal resistance, therefore, in order to guarantee to distribute to the magnitude of voltage of booster circuit 50, the equivalence input internal resistance of booster circuit 50 is equated with the internal resistance of semiconductor power-generating chip 40.
As shown in Figure 2, structural representation for semiconductor thermo-electric generation apparatus embodiment two of the present invention, in the present embodiment, described semiconductor thermo-electric generation apparatus also further comprises insulation closed container 10, described endothermic section 21 is arranged in the described insulation closed container 10, described heat transfer part 22 is arranged on the sidepiece inwall of described insulation closed container, below describes its operation principle in detail:
Described insulation closed container 10 is used for loading liquid thermal source 13, and wherein, the top of this insulation closed container 10 is provided with liquid injection port 11, is provided with sealing insulation plug 12 in this liquid injection port 11.Particularly, can directly inject hot liquid as described liquid thermal source 13 to the inside of insulation closed container 10 from liquid injection port 11, perhaps also can be earlier inject cold liquid to the inside of insulation closed container 10 from liquid injection port 11, by will this cold liquid be incubated closed container 10 in the chemical substance that presets mix heat release after the formation hot liquid as described liquid thermal source 13.Wherein, described chemical substance has the performance of meeting the water heat release, as NaOH etc.Behind the Generation Liquid body heat source, cover sealing insulation plug 12,, prevent that heat runs off from here to keep the heat insulating ability of insulation closed container 10.
In addition, shown in Fig. 3,4, the bottom of described insulation closed container 10 or side can also further be provided with liquid outlet 14, are used to change described liquid thermal source, and described liquid outlet 14 is provided with tapping switch 15.When the temperature of liquid thermal source is too much because of long-time generating reduces, when opening tapping switch 15, the liquid thermal source 13 in the insulation closed container 10 is discharged, with the liquid thermal source that more renews; When normal power generation, when closing tapping switch 15,, prevent that liquid runs off from here to keep the sealing of insulation closed container 10.
Described heat dump 20 comprises endothermic section 21 and heat transfer part 22, and described endothermic section 21 is arranged at the inside of described insulation closed container 10, contacts with described liquid thermal source 13, and described heat transfer part 22 is arranged on the inwall of described insulation closed container 10.
Described radiator 30 is positioned at the outside of described insulation closed container 10, is arranged on the heat transfer part 22 of described heat dump 20 or on the lateral wall of described insulation closed container 10; Described semiconductor power-generating chip 40 is between the heat transfer part 22 and described radiator 30 of described heat dump 20, and the hot junction of described semiconductor power-generating chip 40 connects described heat transfer part 22, and the cold junction of described semiconductor power-generating chip 40 connects described radiator 30.
When generating electricity, the endothermic section 21 of heat dump 20 absorbs heats from liquid thermal source 13, with the heat transferred that the absorbs hot junction to semiconductor power-generating chip 40, the temperature in hot junction is raise via heat transfer part 22; In addition, radiator 30 and air heat exchange, make the cold junction of semiconductor power-generating chip 40 keep low temperature, thereby between the hot junction of semiconductor power-generating chip 40 and cold junction, form the temperature difference, utilize Seebeck (Seebeck) effect to make 40 generatings of semiconductor power-generating chip, by lead-in wire 41 is set, promptly the electric energy that generates can be drawn use, again with needs for electricity such as satisfied illuminations.
The described device of present embodiment as thermal source, relies on the thermal capacitance of high-temp liquid to store lot of energy realization thermo-electric generation at liquid internal with high-temp liquid, therefore can realize continuing generating.
And, owing to adopt the liquid thermal source, so the described device of present embodiment can carry out integrated moduleization with the liquid thermal source, as shown in Figure 4, can (Light Emitting Diode, be called for short: LED) illuminating lamp connects the charger that also can serve as mobile phone with light-emitting diode.
Fig. 5 is the structural representation of semiconductor thermo-electric generation apparatus embodiment three of the present invention; In Fig. 2, the endothermic section 21 of described heat dump 20 can be heat absorbing sheet or heat absorption strip, extend into the inside of insulation closed container 10.And in the present embodiment, the endothermic section 21 of described heat dump 20 also can be metal courage inwall or localized metallic courage inwall, and promptly the inwall along insulation closed container 10 absorbs heat from liquid thermal source 13.
Because metal courage inwall or localized metallic courage inwall need not to extend into the inside of insulation closed container 10, therefore, when from liquid injection port 11 to the inside of insulation closed container 10 when injecting cold liquid or hot liquid, can directly not produce and impact endothermic section 21, thereby helping avoiding damages, increase the service life and cost low.
Fig. 6 is the structural representation of semiconductor thermo-electric generation apparatus embodiment four of the present invention.
Semiconductor power-generating chip 40 in the foregoing description one described semiconductor thermo-electric generation apparatus is a single-stage semiconductor power-generating chip, in order further to improve performance, as shown in the figure, the described semiconductor power-generating chip 40 of present embodiment is specially cold, the auxilliary semiconductor power-generating chip of the single-stage main semiconductor power-generating chip that the hot junction fits and electricity is connected in series and at least one single-stage, the hot junction of described single-stage main semiconductor power-generating chip connects the heat transfer part 22 of heat dump 20, cold junction is pressed close to the hot junction of the auxilliary semiconductor power-generating chip of a single-stage, the hot junction and the cold junction of the auxilliary semiconductor power-generating chip of each single-stage are connected successively, and the cold junction of the auxilliary semiconductor power-generating chip of terminal single-stage connects described radiator 30.
For convenience of description, a single-stage main semiconductor power-generating chip 43 and the auxilliary semiconductor power-generating chip 42 of single-stage have only been shown among Fig. 6, wherein, the hot junction of described single-stage main semiconductor power-generating chip 43 connects the heat transfer part 22 of described heat dump 20, the hot junction of the auxilliary semiconductor power-generating chip 42 of described single-stage connects the cold junction of single-stage main semiconductor power-generating chip 43, and the cold junction of the auxilliary semiconductor power-generating chip 42 of single-stage connects described radiator 30.
The auxilliary semiconductor power-generating chip of single-stage main semiconductor power-generating chip that is provided with in the present embodiment and single-stage all can utilize Seebeck (Seebeck) effect to generate electricity, and being connected in series through electricity helps having improved output voltage; In addition, the auxilliary semiconductor power-generating chip of described single-stage is except having electricity generate function, can also play a large amount of outputs that the energy that stops the liquid thermal source in the insulation closed container 10 passes through chip, thereby reach the buffering purpose of heat transferred, the energy consumption of avoiding being incubated liquid thermal source in the closed container is scattered and disappeared too fast, keep the bigger temperature difference, prolong generating dutation.
Fig. 7 is the structural representation of semiconductor thermo-electric generation apparatus embodiment five of the present invention.As shown in the figure, the described semiconductor power-generating chip 40 of present embodiment is specially a twin-stage semiconductor power-generating chip 44, and wherein the hot junction of one-level connects the heat transfer part 22 of described heat dump 20, and the cold junction of another grade connects described radiator 30.
This is implemented described device and can reach and the foregoing description four similar techniques effects by twin-stage semiconductor power-generating chip is set, and both can improve output voltage, also can prolong generating dutation.
The embodiment of the invention also provides a kind of illuminating lamp, comprises LED, and the semiconductor thermo-electric generation apparatus that also comprises any embodiment of the present invention and provided, and the voltage output end of this semiconductor power-generating chip links to each other with the voltage input end of illuminating lamp by booster circuit.
Fig. 8 is the theory structure schematic diagram of illuminating lamp embodiment of the present invention, comprises LED60 and semiconductor thermo-electric generation apparatus in this illuminating lamp, and Blast Furnace Top Gas Recovery Turbine Unit (TRT) comprises heat dump, radiator 30, semiconductor power-generating chip and booster circuit 50.Wherein, heat dump comprises endothermic section 21 and heat transfer part 22, and endothermic section 21 is used for contacting with the liquid thermal source, absorbs heat from the high-temp liquid thermal source, and heat transfer part 22 is used to conduct the heat that absorbent portion 21 absorbs; Radiator 30 is positioned at outside the liquid thermal source, is arranged on the heat transfer part 22 of heat dump; The semiconductor power-generating chip is between the heat transfer part 22 and radiator 30 of heat dump, semiconductor power-generating chip in the present embodiment specifically comprises single-stage main semiconductor power-generating chip 43 and the auxilliary semiconductor power-generating chip 42 of single-stage, the hot junction of main semiconductor power-generating chip 43 connects heat transfer part 22, and cold junction connects the hot junction of auxilliary semiconductor chip 42.The cold junction of auxilliary semiconductor power-generating chip 42 connects radiator 30, for example realizes heat radiation by air exchange.Booster circuit 50 links to each other with the voltage output end of semiconductor power-generating chip, is used for the magnitude of voltage of semiconductor power-generating chip output is carried out boost operations, supplies with LED60, and driving LED 60 is lighted.
Adopted semiconductor thermo-electric generation apparatus of the present invention,, can boost to output voltage thus and offer LED again after the control, can guarantee to offer enough driving voltages of LED because booster circuit is connected in parallel between semiconductor power-generating chip and the LED.Can not change significantly owing to the output voltage that the fluid temperature fluctuation causes temperature difference fluctuation to cause.The illuminating lamp of the embodiment of the invention can guarantee the stability of its brightness, and can prolong the time of lighting as far as possible.
It should be noted that at last: above embodiment only in order to technical scheme of the present invention to be described, is not intended to limit; Although with reference to previous embodiment the present invention is had been described in detail, those of ordinary skill in the art is to be understood that: it still can be made amendment to the technical scheme that aforementioned each embodiment put down in writing, and perhaps part technical characterictic wherein is equal to replacement; And these modifications or replacement do not make the essence of appropriate technical solution break away from the spirit and scope of various embodiments of the present invention technical scheme.
Claims (8)
1. a semiconductor thermo-electric generation apparatus is characterized in that, comprising:
Heat dump comprises endothermic section and heat transfer part, and described endothermic section is used for contacting with the liquid thermal source, absorbs heat from this liquid thermal source, and described heat transfer part is used to conduct the heat that described absorbent portion absorbs;
Radiator is positioned at outside the described liquid thermal source, is arranged on the heat transfer part of described heat dump;
The semiconductor power-generating chip, between the heat transfer part and described radiator of described heat dump, the hot junction of described semiconductor power-generating chip connects described heat transfer part, and the cold junction of described semiconductor power-generating chip connects described radiator;
Booster circuit links to each other with the voltage output end of described semiconductor power-generating chip, is used for the magnitude of voltage of described semiconductor power-generating chip output is carried out boost operations.
2. semiconductor thermo-electric generation apparatus according to claim 1 is characterized in that: the equivalence input internal resistance of described booster circuit equates with the internal resistance of described semiconductor power-generating chip.
3. semiconductor thermo-electric generation apparatus according to claim 1, it is characterized in that, also comprise: be used for the insulation closed container of loading liquid thermal source, described endothermic section is arranged in the described insulation closed container, and described heat transfer part is arranged on the sidepiece inwall of described insulation closed container.
4. semiconductor thermo-electric generation apparatus according to claim 1, it is characterized in that, described semiconductor power-generating chip comprises: the auxilliary semiconductor power-generating chip of the single-stage main semiconductor power-generating chip that cool and heat ends fits and electricity is connected in series and at least one single-stage, the hot junction of described single-stage main semiconductor power-generating chip connects the heat transfer part of heat dump, cold junction is pressed close to the hot junction of the auxilliary semiconductor power-generating chip of a single-stage, the hot junction and the cold junction of the auxilliary semiconductor power-generating chip of each single-stage are connected successively, and the cold junction of the auxilliary semiconductor power-generating chip of terminal single-stage connects described radiator.
5. semiconductor thermo-electric generation apparatus according to claim 1 is characterized in that, described semiconductor power-generating chip is a twin-stage semiconductor power-generating chip, and wherein the hot junction of one-level connects the heat transfer part of described heat dump, and the cold junction of another grade connects described radiator.
6. semiconductor thermo-electric generation apparatus according to claim 3 is characterized in that, the endothermic section of described heat dump is metal courage inwall or localized metallic courage inwall.
7. according to arbitrary described semiconductor thermo-electric generation apparatus in the claim 1～6, it is characterized in that the endothermic section of described heat dump is heat absorbing sheet or heat absorption strip.
8. an illuminating lamp comprises LED, it is characterized in that, also comprises arbitrary described semiconductor thermo-electric generation apparatus in the claim 1～7, and the voltage output end of described semiconductor power-generating chip links to each other with the voltage input end of described illuminating lamp by booster circuit.
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| CN2011102379860A CN102291058A (en) | 2011-08-18 | 2011-08-18 | Semiconductor temperature difference power generating device and illuminating lamp |
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Cited By (6)
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| CN103759215A (en) * | 2014-01-24 | 2014-04-30 | 吴佳明 | Street lamp system generating electricity through temperature difference |
| WO2014194792A1 (en) * | 2013-06-04 | 2014-12-11 | 东莞市和旺电器有限公司 | Portable generation and lighting device based on temperature difference |
| CN105371218A (en) * | 2014-12-15 | 2016-03-02 | 余姚市立鑫电子有限公司 | Wall embedding type lighting emergency lamp |
| CN106090808A (en) * | 2016-06-03 | 2016-11-09 | 西安理工大学 | A kind of high efficiency thermoelectric conversion LED lamp |
| CN107676651A (en) * | 2017-08-31 | 2018-02-09 | 张亦弛 | A kind of self power generation Portable lighting device and flashlight based on Seebeck effect |
| CN111176048A (en) * | 2020-02-28 | 2020-05-19 | 蔡承承 | Self-driven electrochromic glass utilizing temperature difference for power generation and device |
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Cited By (7)
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| CN105371218A (en) * | 2014-12-15 | 2016-03-02 | 余姚市立鑫电子有限公司 | Wall embedding type lighting emergency lamp |
| CN106090808A (en) * | 2016-06-03 | 2016-11-09 | 西安理工大学 | A kind of high efficiency thermoelectric conversion LED lamp |
| CN107676651A (en) * | 2017-08-31 | 2018-02-09 | 张亦弛 | A kind of self power generation Portable lighting device and flashlight based on Seebeck effect |
| CN111176048A (en) * | 2020-02-28 | 2020-05-19 | 蔡承承 | Self-driven electrochromic glass utilizing temperature difference for power generation and device |
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