CN102290387A - 半导体装置 - Google Patents

半导体装置 Download PDF

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CN102290387A
CN102290387A CN2011100782679A CN201110078267A CN102290387A CN 102290387 A CN102290387 A CN 102290387A CN 2011100782679 A CN2011100782679 A CN 2011100782679A CN 201110078267 A CN201110078267 A CN 201110078267A CN 102290387 A CN102290387 A CN 102290387A
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semiconductor element
semiconductor device
heat diffuser
organic film
resin
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加藤肇
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Abstract

本申请发明涉及一种半导体装置。抑制半导体装置的耐湿性的降低并且谋求提高耐热性。半导体装置具有搭载在热扩散器（3）上的半导体元件（1a）、（1b）、与该半导体元件（1a）、（1b）连接的引线框（5a）、（5b）以及对这些进行保持并且形成外壳的模塑树脂（6）。半导体元件（1a）、（1b）的上方以及侧面被形成在该半导体元件（1a）、（1b）和模塑树脂（6）之间的有机薄膜（8）覆盖。

Description

半导体装置
技术领域
本发明涉及半导体装置，特别涉及假定在高温下进行工作的功率用的半导体装置的结构。
背景技术
作为功率用半导体装置（功率半导体装置）的封装结构，多采用以模塑树脂将功率半导体元件以及连接构件（引线框或导线等）密封的结构（模塑型）或将功率半导体元件以及连接构件容纳在填充有树脂的树脂壳体内的结构（壳体型）（例如，下述的专利文献1～3）。
此外，还公知如下技术：在半导体元件的表面实施聚酰亚胺或聚对二甲苯（对二甲苯）等的涂敷（coating）（例如，下述的专利文献4～8）。
专利文献1：日本特开平9－213878号公报
专利文献2：日本特开2004－165281号公报
专利文献3：日本特开2002－324816号公报
专利文献4：日本特开昭59－76451号公报
专利文献5：日本特开平6－216183号公报
专利文献6：日本特开平9－246307号公报
专利文献7：日本特开昭61－111569号公报
专利文献8：日本特开2008－141052号公报。
一般地，对于对半导体元件以及连接构件进行密封的树脂来说，优选在绝缘性、耐压性、散热性、耐热性、耐湿性、热应力（因热而产生的应力的大小）、机械物理性能（机械强度）、粘接性、流动性（产生气泡的难度）等的特性方面优良。但是，这些特性有相反的方面，所以，实际上，与产品的规格相匹配而采用的树脂的种类或物理性能被调整。
例如，在汽车中，为了使车的室内空间变宽，存在要使发动机舱变小的要求，所以，对于设置在发动机舱内的功率半导体装置，要求小型、高输出、高效率（低损失）。另一方面，当发动机舱变小时，产生功率半导体装置的排热的问题。因此，在车载的功率半导体装置中，还存在高耐热性的要求。
因此，期待例如碳化硅（SiC）半导体元件等能够进行高温工作的半导体元件的运用，但是，因此需要提高密封树脂的耐热性（在作为一般的模塑树脂的环氧树脂的情况下，玻璃态转化温度为约180℃）。但是，在模塑型的半导体装置中，当提高模塑树脂的耐热性时，产生耐湿性的降低或模塑成型性的降低等的问题。此外，在高温下使用壳体型的半导体装置的情况下，由于填充在树脂壳体内的树脂中所产生的应力，存在树脂壳体内的构件（导线等）破坏的可能性。这些问题妨碍了半导体装置的耐热性提高。
发明内容
本发明是为了解决上述课题而提出的，其目的在于提供一种能够抑制耐湿性的降低并且提高耐热性的半导体装置。
本发明的半导体装置具有：半导体元件，搭载在热扩散器（heat spreader）上；引线框，与所述半导体元件电连接；模塑树脂，保持所述半导体元件、所述热扩散器以及所述引线框，形成外壳；有机薄膜，介于所述半导体元件和所述模塑树脂之间，其中所述半导体元件的上方以及侧面被所述有机薄膜覆盖。
一般地，当提高模塑树脂的耐热性时，存在其耐湿性降低的倾向。在本发明的半导体装置中，在半导体元件和模塑树脂之间形成有耐湿性优良的有机薄膜，对于模塑树脂并不要求那样高的耐湿性，所以，能够使用耐热性高的模塑树脂。此外，半导体元件的上方以及侧面被有机薄膜覆盖，所以，能够使在半导体元件中产生的热效率较好地向下方的热扩散器散热。因此，能够确保半导体装置的耐湿性并且谋求提高耐热性。
附图说明
图1是表示实施方式1的半导体装置的结构的剖面图。
图2是表示本发明的半导体装置的有机薄膜的形成方法的图。
图3是表示实施方式2的半导体装置的结构的剖面图。
图4是表示实施方式3的半导体装置的结构的剖面图。
图5是表示实施方式4的半导体装置的结构的剖面图。
附图标记说明：
1a、1b  半导体元件
2 焊料
3 热扩散器
4 导线
5a、5b 引线框
6 模塑树脂
7 绝缘片
71 绝缘树脂层
72 金属层
8 有机薄膜
10 金属化绝缘基板（metallized insulating substrate）
9 热扩散器
11 散热板
12 树脂壳体
13a、13b 端子部
14 盖
21 上夹具
22 下夹具。
具体实施方式
实施方式1
图1是表示实施方式1的半导体装置的结构的剖面图。如该图所示，该半导体装置是如下的模塑型的模块：作为功率半导体元件的半导体元件1a、1b、搭载有该半导体元件1a、1b的热扩散器3、与半导体元件1a、1b电连接的引线框5a、5b被成为外壳的模塑树脂6保持。
在图1中，示出两个半导体元件1a、1b和两个引线框5a、5b，但是，引线框5a经由导线4连接到半导体元件1a，引线框5b使用焊料2接合到半导体元件1a、1b这二者上。热扩散器3由热导率较高的金属等形成，使用焊料2将半导体元件1a、1b接合在热扩散器3的上表面。热扩散器3的下表面从模塑树脂6露出，并且贴附有由绝缘树脂层71和热导率较高的金属层72构成的绝缘片7。
此外，模塑树脂6所保持的各构件（半导体元件1a、1b、焊料2、热扩散器3、导线4、引线框5a、5b）和该模塑树脂6之间形成了有机薄膜8。半导体元件1a、1b的上方和侧面完全被有机薄膜8覆盖。另一方面，半导体元件1a、1b的下方（热扩散器3侧）未形成有机薄膜8。
在本实施方式中，作为有机薄膜8，使用对二甲苯类聚合物，作为模塑树脂6，使用一般的环氧树脂。对于对二甲苯类聚合物（聚对二甲苯）来说，耐热性为较高的250℃～350℃并且热导率为环氧树脂（代表值0.2W/m/k）的50％以下，具有高的隔热性。此外，在聚合物状态下，具有很多苯环和交联结构，所以，在耐湿性方面优良。另一方面，对于环氧树脂来说，当使耐热性以及机械强度提高时，存在耐湿性降低的倾向。
根据图1的结构，半导体元件1a、1b、焊料2、热扩散器3、导线4、引线框5a、5b的表面被耐湿性优良的有机薄膜8覆盖，所以，对于模塑树脂6来说，不要求那么高的耐湿性。因此，作为模塑树脂6，能够采用使耐热性以及机械强度提高了（耐湿性较低）的环氧树脂。
并且，半导体元件1a、1b的上方以及侧面与模塑树脂6之间存在隔热性高的有机薄膜8，所以，在半导体元件1a、1b中所产生的热向模塑树脂6传导的情况被抑制，能够效率良好地向热扩散器3散热。因此，也能够有助于作为半导体装置整体的耐热性的提高。
这样，根据本发明，能够实现如下的半导体装置：能够确保半导体装置的耐湿性并且提高耐热性，所以，能够提高可使用半导体装置的环境温度的上限，在高温环境下（例如，180℃以上）也可得到高的可靠性。特别是，在使用能够进行高温工作的碳化硅（SiC）半导体元件作为半导体元件1a、1b的情况下是有效的。
此外，在半导体元件1a、1b是功率晶体管的情况下，在其上表面（有源面（active surface））配设有发射极电极，在下表面配设有集电极电极，在其间施加最高的电压。对二甲苯类聚合物的有机薄膜8在绝缘性方面也优良，所以，有机薄膜8均匀地形成在半导体元件1a、1b的侧面，由此，还得到发射极电极与集电极电极之间的绝缘性提高的效果。
图2是用于说明有机薄膜8的形成方法的图。使用焊料2以及导线4将半导体元件1a、1b、热扩散器3以及引线框5a、5b接合后，在常温的状态下将这些设置在由上夹具21和下夹具22构成的容器内。并且，在该容器内，使气化后的对二甲苯类单体流入。
当对二甲苯类单体的气体与常温物体接触时，在其表面进行对二甲苯类单体的聚合，均匀地形成对二甲苯类聚合物。由此，在容器内的半导体元件1a、1b、焊料2、热扩散器3、导线4以及引线框5a、5b的表面，均匀地形成了对二甲苯类聚合物的有机薄膜8。
对于所形成的有机薄膜8的厚度来说，5～10μm是合适的。这是因为，当较厚时，能够提高耐湿性以及耐压性，但是，当过于厚时，存在由于有机薄膜8和各构件的膨胀系数之差而产生的应力变大的可能性。
此外，在本实施方式中，在之后的工序中，在热扩散器3的下表面贴附绝缘片7，所以，热扩散器3的下表面紧贴下夹具22，在该部分未形成有机薄膜8。
根据这样使用有机材料的气体形成有机薄膜8的方法，即便物体是复杂的形状，也能够在其表面形成均匀的有机薄膜8。因此，在半导体元件1a、1b的上表面与引线框5b之间或较细的导线4的表面都能够形成均匀的有机薄膜8。此外，能够将有机薄膜8的生长（堆积）厚度控制为微米级，能够容易且高精度地进行由有机薄膜8的厚度所引起的绝缘性和热应力等彼此折衷的特性的调整。
实施方式2
图3是表示实施方式2的半导体装置的结构的剖面图。相对于图1的结构，该半导体装置在半导体元件1a、1b的上表面侧也设置有热扩散器。此处，使引线框5b的一部分较厚，作为热扩散器9而起作用。即，半导体元件1a、1b以被上侧的热扩散器9和下侧的热扩散器3夹持的方式配设。引线框5b的一部分即热扩散器9的上表面从模塑树脂6露出，并贴附有绝缘片7。
在本实施方式中，模塑树脂6所保持的各构件（半导体元件1a、1b、焊料2、热扩散器3、导线4、引线框5a、5b）和该模塑树脂6之间形成了有机薄膜8。与实施方式1同样地，半导体原件1a、1b的侧面完全被有机薄膜8覆盖，但是，半导体元件1a、1b的上方配设有热扩散器9，所以，除了一部分（面对模塑树脂6的部分）之外，被有机薄膜8覆盖。此外，与实施方式1同样地，在半导体元件1a、1b的下方（热扩散器3侧）也未形成有机薄膜8。
在本实施方式中，分别在半导体装置的上表面侧、下表面侧设置有热扩散器9、3，所以，能够得到更高的散热性。此外，隔热性高的有机薄膜8介于半导体元件1a、1b的侧面与模塑树脂6之间，所以，在半导体元件1a、1b中产生的热向模塑树脂6传导的情况被抑制，能够效率良好地向热扩散器3、9散热。
但是，在半导体元件1a、1b与热扩散器3的间隔以及半导体元件1a、1b与热扩散器9（引线框5b）的间隔（即，它们之间的焊料2的厚度）分别是数百μm左右。特别是，在图3所示的半导体元件1a、1b的上下设置有热扩散器9、3的结构中，在冷却性方面，焊料2的厚度较薄是有利的。但是，当其过于薄时，引线框5b和热扩散器3之间（发射极电极与集电极电极之间）的空间变窄，容易在该部分的模塑树脂6中产生孔隙，所以，在绝缘性方面不利。
与实施方式1相同地，若以使用有机材料的气体的方法形成有机薄膜8，则也能够在这样狭窄的空间均匀地形成绝缘性较高的有机薄膜8，所以，即便产生孔隙，也能够抑制引线框5b与热扩散器3之间的绝缘性的恶化。即，以使用有机材料的气体的方法形成有机薄膜8，由此，能够防止半导体装置的绝缘性的恶化，并且能够使焊料2变薄以提高散热性。
实施方式3
图4是表示实施方式3的半导体装置的结构的剖面图。在本实施方式中，在从模塑树脂6露出的热扩散器3的下表面也形成有机薄膜8。由于有机薄膜8具有优良的绝缘性，所以，不需要在热扩散器3的下表面贴附绝缘片7，能够降低制造成本。
此外，在热扩散器3的下表面形成有机薄膜8，所以，在以图2进行了说明的有机薄膜8的形成方法中，在使热扩散器3从下夹具22上浮起的状态下使有机材料的气体流入容器内即可。
此外，本实施方式也能够应用于实施方式2。即，在图3的结构中，可以在热扩散器3的下表面和热扩散器9的上表面形成有机薄膜8。在该情况下，也能够省略热扩散器9的绝缘片7。
实施方式4
在实施方式1～3中，示出了模塑型的半导体装置的例子，但是，本发明也能够应用于壳体型的半导体装置。此处，示出将本发明应用于壳体型的半导体装置的例子。
图5是示出实施方式4的半导体装置的结构的剖面图。半导体元件1a、1b隔着焊料2固定在金属化绝缘基板10（支撑基板）上。这些半导体元件1a、1b以及金属化绝缘基板10容纳在树脂壳体12内。树脂壳体12在其底部具有散热板11，在其上使用焊料2固定有金属化绝缘基板10。
此外，树脂壳体12具有端子部13a、13b，在图5的例子中，半导体元件1a经由导线4连接到端子部13a，半导体元件1b经由导线4连接到端子部13b。此外，半导体元件1a、1b之间也经由导线4而连接。
在本实施方式中，将搭载了半导体元件1a、1b的金属化绝缘基板10固定在树脂壳体12内的散热板11上，利用导线4进行布线之后，在树脂壳体12的内部形成有机薄膜8。与实施方式1相同地，有机薄膜8的形成方法可以是使用有机材料的气体的方法（图2）。
在本实施方式中，容纳在树脂壳体12内的各构件（半导体元件1a、1b、焊料2、导线4、金属化绝缘基板10）以及树脂壳体12的内表面（包括端子部13b以及散热板11）的表面形成有机薄膜8。此处，对于有机薄膜8的厚度来说，5～10μm左右是适当的。着眼于半导体元件1a、1b的周围的有机薄膜8，半导体元件1a、1b的上方和侧面完全被有机薄膜8覆盖。另一方面，不在半导体元件1a、1b的下方（金属化绝缘基板10侧）形成。
为了提高耐湿性以及耐压性，在形成有机薄膜8之后，与现有技术相同地，在树脂壳体12内，填充硅凝胶等的树脂并用盖14进行密封。但是，在本实施方式中，在容纳于树脂壳体12内的各构件的表面形成有耐热性以及耐湿性优良的有机薄膜8，所以，能够省略树脂的填充（在树脂壳体12内密封有空气）。
在本实施方式中，覆盖容纳于树脂壳体12内的各构件的表面的有机薄膜8非常薄（5～10μm左右），所以，能够防止因有机薄膜8与各构件的热膨胀系数之差而产生的应力变大。
此外，半导体元件1a、1b的上方以及侧面被隔热性高的有机薄膜8覆盖，所以，在半导体元件1a、1b中产生的热向模塑树脂6传导的情况被抑制，能够效率良好地向热扩散器3散热。因此，也能够有助于作为半导体装置整体的散热性的提高。
此外，在以往的壳体型的半导体装置中，通常在树脂壳体内部填充硅凝胶等树脂，但是，在本实施方式中能够将其省略。如果省略树脂的填充，则当然能够降低制造成本，在高温下使用半导体装置时，也不产生由于树脂中产生的应力而使树脂壳体12内的构件（导线4等）破损的问题。因此，能够有助于半导体装置的温度循环寿命的长期化。

Claims (11)

1. 一种半导体装置，其特征在于，具有：
半导体元件，搭载在热扩散器上；
引线框，与所述半导体元件电连接；
模塑树脂，保持所述半导体元件、所述热扩散器以及所述引线框，形成外壳；以及
有机薄膜，介于所述半导体元件和所述模塑树脂之间，
所述半导体元件的上方以及侧面被所述有机薄膜覆盖。
2. 如权利要求1所述的半导体装置，其特征在于，
所述热扩散器的下表面从所述模塑树脂露出，并且贴附有绝缘片。
3. 如权利要求1所述的半导体装置，其特征在于，
所述热扩散器的下表面从模塑树脂露出，
所述有机薄膜也覆盖所述热扩散器的下表面。
4. 如权利要求1～3的任意一项所述的半导体装置，其特征在于，
所述半导体元件是碳化硅半导体元件。
5. 一种半导体装置，其特征在于，具有：
半导体元件，配设在上侧的第一热扩散器与下侧的第二热扩散器之间；
引线框，与所述半导体元件电连接；
模塑树脂，保持所述半导体元件、所述第一及第二热扩散器以及所述引线框，形成外壳；以及
有机薄膜，介于所述半导体元件和所述模塑树脂之间，
所述半导体元件的侧面被所述有机薄膜覆盖。
6. 如权利要求5所述的半导体装置，其特征在于，
所述第一热扩散器的上表面以及所述第二热扩散器的下表面从所述模塑树脂露出，并且贴附有绝缘片。
7. 如权利要求5所述的半导体装置，其特征在于，
所述第一热扩散器的上表面以及所述第二热扩散器的下表面从所述模塑树脂露出，
所述有机薄膜也覆盖所述第一热扩散器的上表面以及所述第二热扩散器的下表面。
8. 如权利要求5～7的任意一项所述的半导体装置，其特征在于，
所述半导体元件是碳化硅半导体元件。
9. 一种半导体装置，其特征在于，具有：
半导体元件；
支持基板，搭载有所述半导体元件；
树脂壳体，具有经由布线而与所述半导体元件电连接的端子部，并且，容纳所述半导体装置以及所述支持基板；以及
有机薄膜，形成在所述半导体元件的表面，
所述支持基板载置于在所述树脂壳体的底部所设置的散热板上，
所述半导体元件的上方以及侧面被所述有机薄膜覆盖。
10. 如权利要求9所述的半导体装置，其特征在于，
在所述树脂壳体内未填充树脂。
11. 如权利要求9或10所述的任意一项所述的半导体装置，其特征在于，
所述半导体元件是碳化硅半导体元件。
CN2011100782679A 2010-06-16 2011-03-30 半导体装置 Pending CN102290387A (zh)

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