CN102289155A - Photoetching machine based on ultraviolet LED (Light Emitting Diode) light source - Google Patents
Photoetching machine based on ultraviolet LED (Light Emitting Diode) light source Download PDFInfo
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- CN102289155A CN102289155A CN201110230598XA CN201110230598A CN102289155A CN 102289155 A CN102289155 A CN 102289155A CN 201110230598X A CN201110230598X A CN 201110230598XA CN 201110230598 A CN201110230598 A CN 201110230598A CN 102289155 A CN102289155 A CN 102289155A
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Abstract
The invention discloses a photoetching machine based on an ultraviolet LED (Light Emitting Diode) light source. The structure of the invention comprises an optical system of the ultraviolet LED light source, a light emitting controller, a diaphragm, a photoetching mask template and a photoetching substrate, wherein the optical system of the ultraviolet LED light source realizes the uniform irradiation exposure of light beams; the light emitting controller controls the exposure time and the relative irradiation intensity; and the photoetching machine can adopt contact type or approach type exposure. The photoetching machine disclosed by the invention has the advantage of simplicity in structure; and compared with a traditional photoetching machine system based on a mercury lamp light source, the photoetching machine disclosed by the invention uses the ultraviolet LED light source, completes the exposure time and the exposure irradiation intensity by controlling the light source system and does not need to additional increase a light filter and a photoelectric shutter. The photoetching machine disclosed by the invention is a photoetching system which has the advantages of simplicity in structure, stability in operation, long service life, small heat dissipation, high efficiency, energy conservation and environmental protection. The photoetching machine disclosed by the invention can be used for micro-nano machining fields for manufacturing micro-electronic and micro-nano photon devices and the like.
Description
Technical field
The present invention relates to micro-nano manufacture fields such as microelectronics, the preparation of micro-nano photonic device, particularly a kind of litho machine based on the ultraviolet LED light source.
Background technology
Photoetching technique is a kind of Micrometer-Nanometer Processing Technology of precision.At present, do exposure light source with high-pressure sodium lamp mostly, adopt i line (365nm) exposure of Hg based on the litho machine of ultraviolet source.The subject matter of its existence is:
1, optical system complexity.The mercury lamp light source belongs to stereoscopic and omnibearing irradiation, and for realizing the even irradiation of single wavelength, its optical system comprises light hurdle, shutter, collimating mirror, lens combination (generally needing tens even up to a hundred lens), i line optical filter, field lens, catoptron or the like.Complicated optical system becomes the bottleneck of the high and miniaturization of litho machine price.
2, stability is low.The luminous utmost point metal of mercury lamp in use adds thermal deformation easily, causes its hot spot to move easily, thus need often to regulate, when particularly just having finished preheating.
3, the life-span is short.The high-pressure sodium lamp life-span that litho machine uses is generally about 2000 hours.High-pressure sodium lamp need shift to an earlier date preheating in addition, and can not close after opening, and this has further caused mercury lamp its effective rate of utilization in exposure further to reduce.
4, temperature height.Temperature is up to more than 1,000 degrees centigrade in use for mercury lamp, and this has very big influence to optical system and attached device, so need add air-cooled or water-cooling system based on the litho machine of mercury lamp light source, this has further increased the price of equipment and the complicacy of operation.
5, energy consumption height.The high-pressure sodium lamp power that existing litho machine uses generally all more than 1000W, through behind a series of optical elements, its effectively power density of exposure at 5-20mW/cm
2So its capacity usage ratio is low, can not close after mercury lamp is opened in addition, cause not between exposure period the further waste of energy.
6, not environmental protection.Mercury is noxious material, in case reveal, can cause severe contamination and have a strong impact on operator's health and safety environment.
Summary of the invention
The objective of the invention is to overcome the weak point of existing photoetching technique based on high-pressure sodium lamp, provide a kind of simple in structure, stable, the life-span long, the litho machine based on the ultraviolet LED light source of energy-saving and environmental protection.
The technical scheme that realizes above-mentioned purpose is as follows:
A kind of litho machine based on the ultraviolet LED light source, it is characterized in that: it comprises: light emission controller, ultraviolet LED light source optical system, Guang Lan, mask plate, photoresist and photoresist substrate base; Wherein,
Described light emission controller is used to control time shutter and relative irradiation intensity, and its Exposure mode adopts contact or proximity;
Described ultraviolet LED light source optical system, by optical design to ultraviolet LED light source and lens space distribution, or only optical design by the ultraviolet LED light source space is distributed, realize the ultraviolet LED light source blue outer light beam at the even radiation exposure that is the plane of exposure at operating distance place apart from this ultraviolet LED light source certain distance;
Described smooth hurdle is used to control exposure area and eliminates the irradiation of edge parasitic light to sample.
Further, according to the peak wavelength of the used ultraviolet LED light source of described litho machine based on the ultraviolet LED light source at 315nm to 400nm.
Further, according to described ultraviolet LED light source optical system, in order to realize the even irradiation of plane of exposure, this ultraviolet LED light source optical system can adopt 3 kinds of different modes:
1) the ultraviolet LED light source is arranged in the plane, adds lens combination before this ultraviolet LED light source, the even irradiation that realization is the plane of exposure at operating distance place apart from this ultraviolet LED light source certain distance;
2) the ultraviolet LED light source is arranged on the cambered surface with certain curvature radius, adds 1 lens before each ultraviolet LED, realizes the even irradiation of the plane of exposure of this ultraviolet LED light source works distance;
3) the ultraviolet LED light source is arranged on the cambered surface with certain curvature radius, realizes the even irradiation of the plane of exposure of this ultraviolet LED light source works distance.
Further, described ultraviolet LED light source adopts the ultraviolet LED array, realizes the even radiation exposure of high strength.
Further, for time shutter and/or relatively the expose irradiation intensity of the control that exposes by control LED.
Further, the control of time shutter is finished by luminous open and close.Time shutter adopts the 0.1s-999.9s countdown to carry out.
Further, the control of relative exposure irradiation intensity is finished by the light-emitting mode of control ultraviolet LED light source, described relative exposure irradiation intensity is adjustable between peaked 1%-100%.
The innovative principle of technique scheme with the advantage of comparing conventional art is:
1, light source adopts the ultraviolet LED light source, and a plurality of LED unit cell arrangement become array structure, realizes that LED emission light satisfies the even irradiation that contact or proximity photoetching require on the irradiation face of a distance;
2, the array structure of led light source can be one of following three kinds of structures: led array is distributed as the plane, before led array, add lens combination (generally getting final product) with 2 lens, perhaps the led array structure distribution is a cambered surface, and before each ultraviolet LED, add lens, form lens arra, perhaps the led array structure distribution is a cambered surface, does not have lens arra, directly forms illumination; For example use LED planar array and 2 lens of 4 * 4, can realize the about 2100mW/cm of irradiation intensity at the about 20mm of distance light source place
2Even irradiation;
3, the wavelength of used led light source is at ultraviolet band, and the peak wavelength of used ultraviolet LED light source is usually at 315nm to 400nm, and is preferred as 365 ± 5nm.Because the wave spectrum of ultraviolet LED is narrow, thus need not to use ultraviolet filter, thus the energy dissipation that the absorption loss of effectively having avoided the use optical filter to bring causes.Simultaneously ultraviolet LED is luminous does not have an infrared spectrum composition, surrounding environment can absorbing light after temperature raise, reduced the influence of system environments and the parameter drift of system;
4, the time shutter finishes by control the luminous of light source itself with the relative irradiation intensity that exposes, and need not to use shutter, opens light source and promptly begins exposure, end exposure, light source is closed automatically, has avoided the energy dissipation that light source continuation unlatching causes behind the end exposure, realizes the efficient use of energy.Because the current response time of LED is short, contactor is real-time to the luminous control of LED, thereby lithographic radiation intensity is had accurate control.Its Exposure mode adopts contact or proximity.Time shutter can adopt the 0.1-999.9s countdown to carry out, and the irradiation intensity that exposes relatively can be controlled between peaked 1～100%;
5, the life-span of litho machine is determined by light source life, because the life-span of ultraviolet LED reaches 20000 hours, so this litho machine system can realize the long-life use, the light source luminescent intensity stabilization can not change along with service time;
6, system power is at 5W～50W, and temperature is low, and thermal value is little, realizes the photoetching of low power sources;
7, adopt the ultraviolet LED light source, realize photoetching based on the environmental protection light source;
8, ultraviolet LED etching system simplicity of design, energy consumption is low, and cost is low, is fit to be applied in the lithography apparatus of small low-cost;
9, stable performance, simple in structure, the life-span is long, efficient is high, energy-saving and environmental protection, is applicable to micro-nano manufacture fields such as microelectronics, the preparation of micro-nano photonic device.
Description of drawings:
Fig. 1 is a structural representation of the present invention;
Fig. 2 is a 365nm ultraviolet LED light source light spectrogram;
Fig. 3 is the exposure figure as a result that utilizes litho machine gained of the present invention;
Fig. 4 is distributed in cambered surface for led array and is added with the ultraviolet LED light source optical system synoptic diagram of lens arra;
Fig. 5 is distributed in the ultraviolet LED light source optical system synoptic diagram of cambered surface for led array;
Wherein, 1, light emission controller; 2, ultraviolet LED light source optical system; 3, arrange at grade led array; 4, lens combination; 5, Guang Lan; 6, mask plate; 7, photoresist; 8, photoresist substrate base; 9, be arranged in led array on the cambered surface with certain curvature radius; 10, lens arra.
Embodiment:
The present invention is further described in detail below in conjunction with the drawings and specific embodiments, and label identical in the accompanying drawing is represented identical parts all the time.
Embodiment 1:
With reference to Fig. 1, comprise that based on the litho machine of ultraviolet LED light source light emission controller 1 is used to control time shutter and relative exposure irradiation intensity; Ultraviolet LED light source optical system 2, by arrange at grade led array 3 and array before added lens combination 4 constitute, be used to realize LED blue outer light beam be the even irradiation of the plane of exposure at operating distance place at distance light source certain distance; Light hurdle 5 is used to control exposure area and eliminates the irradiation of edge parasitic light to sample; Mask plate 6; Photoresist 7; Photoresist substrate base 8.
As shown in Figure 1, set time shutter and relative irradiation intensity by light emission controller 1, start luminous, arranging each LED of at grade led array 3 will be simultaneously luminous, and light beam is through lens combination 4 shapings, and 5 eliminate the edge parasitic lights through the light hurdle, irradiation photo mask board 6, realization is to the exposure of photoresist 7, after subsequent techniques such as development, photographic fixing are handled, with the figure transfer of mask plate to photoresist substrate base 8.
Fig. 2 is the spectrogram of a kind of ultraviolet LED light source shown in Figure 1, and peak wavelength is 365nm, and full width at half maximum is 10nm.
Fig. 3 is the microscopic iage that utilizes the litho pattern of the photoresist gained on the litho machine system exposed silicon substrate shown in Figure 1.The result is consistent with the mask plate figure for the exposure gained.
Embodiment 2:
Fig. 4 is a kind of ultraviolet LED light source optical system that contains lens arra, it has the led array 9 that is arranged on the cambered surface with certain curvature radius, add 1 lens before each LED, constitute lens arra 10, start luminous after, each LED that is arranged in led array 9 on the cambered surface with certain curvature radius is simultaneously luminous, and through the lens light gathering of front separately, realizes even irradiation at the plane of exposure at operating distance place.
Other structure is with embodiment 1.
Embodiment 3:
Fig. 5 is another kind of ultraviolet LED light source optical system, it has the led array 9 that is arranged on the cambered surface with certain curvature radius, start luminous after, each LED that is arranged in the led array 9 on the cambered surface with certain curvature radius is simultaneously luminous, realizes even irradiation at the plane of exposure at operating distance place.
Other structure is with embodiment 1.
Claims (8)
1. litho machine based on the ultraviolet LED light source, it is characterized in that: it comprises: light emission controller, ultraviolet LED light source optical system, Guang Lan, mask plate, photoresist and photoresist substrate base; Wherein,
Described light emission controller is used to control time shutter and relative irradiation intensity, and its Exposure mode adopts contact or proximity;
Described ultraviolet LED light source optical system, by optical design to ultraviolet LED light source and lens space distribution, or only optical design by the ultraviolet LED light source space is distributed, realize the ultraviolet LED light source blue outer light beam at the even radiation exposure that is the plane of exposure at operating distance place apart from this ultraviolet LED light source certain distance;
Described smooth hurdle is used to control exposure area and eliminates the irradiation of edge parasitic light to sample.
2. the litho machine based on the ultraviolet LED light source according to claim 1 is characterized in that the peak wavelength of used ultraviolet LED light source is at 315nm to 400nm.
3. the litho machine based on the ultraviolet LED light source according to claim 1 is characterized in that, described ultraviolet LED light source optical system, and in order to realize the even irradiation of plane of exposure, this ultraviolet LED light source optical system can adopt 3 kinds of different modes:
1) the ultraviolet LED light source is arranged in the plane, adds lens combination before this ultraviolet LED light source, the even irradiation that realization is the plane of exposure at operating distance place apart from this ultraviolet LED light source certain distance;
2) the ultraviolet LED light source is arranged on the cambered surface with certain curvature radius, adds 1 lens before each ultraviolet LED, realizes the even irradiation of the plane of exposure of this ultraviolet LED light source works distance;
3) the ultraviolet LED light source is arranged on the cambered surface with certain curvature radius, does not have lens arra, directly forms illumination, realizes the even irradiation of the plane of exposure of this ultraviolet LED light source works distance.
4. according to claim 1 or 3 described litho machines, it is characterized in that described ultraviolet LED light source adopts the ultraviolet LED array, realize the even radiation exposure of high strength based on the ultraviolet LED light source, the light intensity unevenness in the photoetching area less than 3%.
5. the litho machine based on the ultraviolet LED light source according to claim 1 is characterized in that, finishes by the time shutter and/or the irradiation intensity that exposes relatively of control LED for the control of exposure.
6. according to claim 1 or 5 based on the litho machine of ultraviolet LED light source, it is characterized in that, the control of time shutter is finished by luminous open and close.
7. according to claim 1 or 5 based on the litho machine of ultraviolet LED light source, it is characterized in that, the control of time shutter finished by luminous open and close that the time shutter adopts the 0.1s-999.9s countdown to carry out.
8. according to claim 1 or 5 based on the litho machine of ultraviolet LED light source, it is characterized in that, control to relative exposure irradiation intensity is finished by the light-emitting mode of control ultraviolet LED light source, and described relative exposure irradiation intensity is adjustable between peaked 1%-100%.
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| CN103515492A (en) * | 2012-06-28 | 2014-01-15 | 上海蓝光科技有限公司 | Method for photoetching of LED wafer without mask plate |
| CN104483813A (en) * | 2014-12-01 | 2015-04-01 | 东莞科视自动化科技有限公司 | Exposure machine light source transformation method and UVLED light source mechanism |
| CN105022234A (en) * | 2015-07-14 | 2015-11-04 | 浙江大学 | Cross-scale microstructure fabrication method based on multiple exposures |
| CN105759571A (en) * | 2016-05-13 | 2016-07-13 | 京东方科技集团股份有限公司 | Ultraviolet light mask device and use method thereof |
| CN111458986A (en) * | 2020-04-22 | 2020-07-28 | 安徽大学 | Inverted contact type optical exposure photoetching equipment and exposure method |
| CN113156775A (en) * | 2021-04-27 | 2021-07-23 | 华中科技大学 | Proximity type exposure light source and exposure method |
| CN116974158A (en) * | 2023-09-25 | 2023-10-31 | 鹏城实验室 | Proximity lithography system, light source control optimization method, apparatus, and storage medium |
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Cited By (13)
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| CN103515492A (en) * | 2012-06-28 | 2014-01-15 | 上海蓝光科技有限公司 | Method for photoetching of LED wafer without mask plate |
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| CN105022234B (en) * | 2015-07-14 | 2017-05-17 | 浙江大学 | Cross-scale microstructure fabrication method based on multiple exposures |
| CN105022234A (en) * | 2015-07-14 | 2015-11-04 | 浙江大学 | Cross-scale microstructure fabrication method based on multiple exposures |
| CN105759571A (en) * | 2016-05-13 | 2016-07-13 | 京东方科技集团股份有限公司 | Ultraviolet light mask device and use method thereof |
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| CN111458986A (en) * | 2020-04-22 | 2020-07-28 | 安徽大学 | Inverted contact type optical exposure photoetching equipment and exposure method |
| CN113156775A (en) * | 2021-04-27 | 2021-07-23 | 华中科技大学 | Proximity type exposure light source and exposure method |
| CN116974158A (en) * | 2023-09-25 | 2023-10-31 | 鹏城实验室 | Proximity lithography system, light source control optimization method, apparatus, and storage medium |
| CN116974158B (en) * | 2023-09-25 | 2024-01-02 | 鹏城实验室 | Proximity lithography system, light source control optimization method, apparatus, and storage medium |
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Application publication date: 20111221 |