CN102280366A - Rotating window piece apparatus used for laser processing - Google Patents
Rotating window piece apparatus used for laser processing Download PDFInfo
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- CN102280366A CN102280366A CN2011102405386A CN201110240538A CN102280366A CN 102280366 A CN102280366 A CN 102280366A CN 2011102405386 A CN2011102405386 A CN 2011102405386A CN 201110240538 A CN201110240538 A CN 201110240538A CN 102280366 A CN102280366 A CN 102280366A
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Abstract
The invention, which belongs to the semiconductor processing technology field, discloses a rotating window piece apparatus used for laser processing. The window piece of a shielding can is fixed on one side of a shielding can support component. The shielding can support component is fixed on a top of an annular wall of the shielding can support component. The annular wall of the shielding can support component is supported on an outer periphery wall of a heat insulation material layer of a heater by a bearing part. A wafer is placed on a heating plate bench. By using the rotating window piece structure, a high temperature part which is on the heating plate bench can be isolated from heat influence and disturbance caused by surrounding environment and other equipment parts. Because a transparent window piece is used, a technology effect of laser to the wafer is not isolated. The rotating window piece is adopted so as to reduce a processing difficulty of the window piece. Optical characteristics of the window piece can be accurately controlled in a small size range. Formed laser beams are not affected by an extra adverse influence caused by nonuniform window piece characteristics. Stabilization of technology effects can be guaranteed.
Description
Technical field
The invention belongs to the semiconductor manufacturing facility scope, particularly a kind of pivoted window sheet device that is used for laser processing.Be in the deep ultraviolet laser annealing device in semiconductor device manufacturing process specifically, adopt window to remove to isolate effectively heat for the low temperature component affects, simultaneously because the window rotation, can reduce size again effectively, reduce the difficulty of isolation cover structure (particularly transparent window film) processing and manufacturing the window of annealing laser-light transparent.
Background technology
Along with constantly dwindling of cmos device characteristic size, process node enters into 32nm, 22nm etc., requires to produce the source-drain area with super shallow junction structures this moment.Leak for super shallow junction source, the method that generally adopts low energy ion to inject forms super shallow doping, and in the link of impurity activation, the current comparatively technology of approval is that wavelength is the laser annealing of deep ultraviolet.
The annealing of adopting deep ultraviolet laser to carry out impurity activates, and is because the deep ultraviolet laser wavelength is short, to the direct acting depth as shallow of substrate material, only super shallow surf zone is exerted an influence, and therefore is suitable for shallow junction and makes; On the other hand, again because annealing laser work in pulse mode, laser pulse is about the magnitude of a few to tens of nanoseconds, annealing total during annealing is very of short duration action time, the diffusion control again of annealing stage impurity can approached zero level that spreads, so just, can obtain not having the annealing effect of diffusion, make desired super shallow junction source and leak.
For super shallow junction laser annealing, for reducing considerations such as heat effect gradient, generally can adopt simultaneously substrate slice is carried out complementary heating, for example heating-up temperature can be 350 ℃ etc.Carry out the laser annealing of assistant heating for such class and handle, when realizing the equipment of laser annealing, need do special hot isolation design, to avoid the influence of heat energy for other EM equipment module.Adopt Electric heating from the substrate slice back side wafer to be heated, the heat shielding of the back side and side is isolated, and all is easy to handle, and not allowing tractable is the front of wafer.
In order to isolate wafer heat dissipation upward effectively, can make a cage, as shown in Figure 1, be covered in the top of disk.Cage is made of strutting piece 2 and window 1, and window 1 must be transparent for annealing laser, and laser can see through the surface that window affacts wafer like this, anneals normally.Adopt after the isolation cover structure, convection current and two kinds of heat leakages of conduction just have been subjected to inhibition; In fact, also can select window materials, it is transparent making it for ultraviolet annealing laser, appears and hinder it for long wavelength's heat wave more, can realize best isolation effect like this.
The die size of current main-stream is 12 English inch (the wafer diameter is 300mm), in the future also may be bigger, so the size of window 1 all is greater than wafer under the normal condition.Usually for window texture material is arranged, evenness, thickness, very large scale is made in the requirement that aspects such as optical property are very strict, and the window of every strict processing request is arranged simultaneously, is actually very difficult.Therefore the present invention proposes a kind of isolation cover structure that rotates window, can reduce window 1 size effectively, greatly reduces the difficulty of cage processing and manufacturing, has solved the problem in laser annealing apparatus manufacturing and the process practice.
Summary of the invention
The purpose of this invention is to provide a kind of pivoted window sheet device that is used for laser processing, it is characterized in that, the window 1 of cage is fixed on one side of cage strutting piece 2, cage strutting piece 2 is fixed on cage strutting piece annular wall 3 tops, and cage strutting piece annular wall 3 is supported on insulation material layer 7 outer circle walls of heater by parts of bearings 5; Wafer 4 places on the heating plate platform 6.
The size of described window just covers the part of wafer, cage is placed on the sheet platform, contact by the insulation material layer of bearing with sheet platform and heater, and can drive by external motor, around the rotation of wafer center, with the cage unitary rotation, when annealing laser beam when wafer surface is done scanning, window can in time turn to and will carry out the top, zone of laser action, does not therefore hinder the annealing of laser for wafer surface.
The strutting piece of described cage and cage strutting piece annular wall are opaque, make with metal material.
Described window is that transparent material is made, and the cage window is made becomes circle, and slightly larger in diameter is in the radius of wafer, and promptly by rotation, the zone that laser can be seen through covers whole wafer surface.
The invention has the beneficial effects as follows by using the window structure of rotation, can isolate of thermal impact and the disturbance of heating plate platform high-temperature component for surrounding environment and other equipments unit; On the other hand be transparent window owing to adopted to effect laser, can't isolation laser for the process acts of wafer; At last,, make the window transparent region always be between the zone of the wafer that laser beam will and will affact by the rotation transparent window film, therefore with regard to allowing the less window of usable floor area to realize heat insulation not every the purpose of light.Adopt the way of rotation window, greatly reduced the processing and manufacturing difficulty of window itself, the optical characteristics of window can be precisely controlled in smaller size range, window is when seeing through laser beam, forming laser Shu Buhui is subjected to the extra harmful effect that causes because of the window characteristic is inhomogeneous, can guarantee that technological effect is more stable.
Description of drawings
Fig. 1 is conventional window isolation cover structure, and Fig. 2 is the schematic diagram of rotation cage window, and Fig. 3 is cage and wafer, the installation site schematic diagram of heating plate platform etc.Among Fig. 1～Fig. 3,
1--cage window; 2-cage strutting piece; The annular wall of 3-cage strutting piece; The 4-wafer; The 5-parts of bearings; 6-heating plate platform; The insulation material layer of 7-heater.
Embodiment
The invention provides a kind of pivoted window sheet device that is used for laser processing.Illustrated below in conjunction with accompanying drawing.
At the schematic diagram of rotation cage window shown in Figure 2 and cage and wafer shown in Figure 3, in the installation site schematic diagram of heating plate platform etc., the window 1 of cage is fixed on one side of cage strutting piece 2, cage strutting piece 2 is fixed on cage strutting piece annular wall 3 tops, and cage strutting piece annular wall 3 is supported on insulation material layer 7 outer circle walls of heater by parts of bearings 5; Wafer 4 places on the heating plate platform 6.Wherein the size of window 1 just covers the part of wafer 4, cage is placed on the sheet platform, contact with the insulation material layer 7 of sheet platform and heater by bearing 5, and can drive by external motor (as shown in Figure 2), around the rotation of wafer center, with the cage unitary rotation, when annealing laser beam when wafer surface is done scanning, window 1 can in time turn to and will carry out the top, zone of laser action, does not therefore hinder the annealing of laser for wafer surface.It is that material transparent is made that window 1 adopts for laser, quartz material for example, and for most of effect Wavelength of Laser, for example wavelength is between the 200nm to 600nm, all is suitable.Processing request for window is that material is even, and optical characteristics is even, and window two surfaces are parallel, thickness uniformity etc.Window can be made conglobate, and its diameter only need be slightly larger than the wafer radius and get final product.Window also can be made the shape that becomes other.
The strutting piece 2 of described cage and cage strutting piece annular wall 3 are opaque, use the metal material manufacturing, for example adopt aluminum alloy materials to make, and except that the more convenient processing of metalwork, strutting piece also can adopt nonmetallic materials to make.Strutting piece is a disc-shape, and the area of disk is greater than the area of the wafer that will carry out the laser processing processing.
Window is installed on the strutting piece, constitutes cage jointly.Cage tips upside down on wafer and the sheet platform.When carrying out the processing of laser annealing, heater heats former from the back side of wafer, makes silicon chip be in the state of relatively-high temperature, and for example, the visual process requirements of temperature is controlled between 300～450 ℃.The high-temperature component that comprises wafer, its side and below are carried out heat by insulation material layer 7 and are isolated; The isolation of top then realizes by cage.
During the PROCESS FOR TREATMENT, laser beam sees through the surface that window affacts wafer, and window for example, is 1.5cm apart from wafer.Because the window that is adopted is small-sized, all surfaces that does not cover wafer is long-pending, when laser beam is mobile to the scanning of wafer surface do, adopts the way of cage rotation, makes window along with the mobile of light beam also rotated accordingly.The window rotation is moved with laser beam flying and is worked in coordination with, the speed of laser beam flying, can be 15mm/s for example, so the rotation of window can get caught up in such speed fully, make window always be in the top of the wafer surface that will handle for the 200mm wafer.
The rotation of cage and window can drive by external motor and carry out, and for example at sidewall 3 places of cage, can make gear, rotates under driving with convenient externally mechanism.In fact the Position Control of window rotation does not need accurate especially, can adopt computer to coordinate the two the motion of laser beam and cage.
Claims (5)
1. pivoted window sheet device that is used for laser processing, it is characterized in that, the window of cage is fixed on one side of cage strutting piece, the cage strutting piece is fixed on cage strutting piece annular wall top, and cage strutting piece annular wall is supported on the insulation material layer outer circle wall of heater by parts of bearings; Wafer places on the heating plate platform.
2. according to the described pivoted window sheet device that is used for laser processing of claim 1, it is characterized in that, the size of described window just covers the part of wafer, cage is placed on the sheet platform, contact with the sheet platform by bearing, and can drive by external motor, around the rotation of wafer center, with the cage unitary rotation, when annealing laser beam when wafer surface is done scanning, window can in time turn to and will carry out the top, zone of laser action, does not therefore hinder the annealing of laser for wafer surface.
3. according to the described pivoted window sheet device that is used for laser processing of claim 1, it is characterized in that the strutting piece of described cage and cage strutting piece annular wall are opaque, with metal or comprise the pottery the nonmetallic materials manufacturing.
4. according to the described pivoted window sheet device that is used for laser processing of claim 1, it is characterized in that, described window is that transparent material is made, the cage window is made becomes circle, slightly larger in diameter is in the radius of wafer, promptly by rotation, the zone that laser can be seen through covers whole wafer surface.
5. the rotation of window according to claim 1, it is characterized in that, be under the control of computer program, make the sheet platform move and rotatablely move with window that both coordinate mutually with respect to the scanning of laser beam, here, the sheet platform moves with respect to the scanning of laser beam and will carry window and leave light-beam position, and the motion of window own makes the window rotation get back to the below of laser beam.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110240538.6A CN102280366B (en) | 2011-08-19 | 2011-08-19 | Rotating window piece apparatus used for laser processing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110240538.6A CN102280366B (en) | 2011-08-19 | 2011-08-19 | Rotating window piece apparatus used for laser processing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102280366A true CN102280366A (en) | 2011-12-14 |
| CN102280366B CN102280366B (en) | 2014-01-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201110240538.6A Expired - Fee Related CN102280366B (en) | 2011-08-19 | 2011-08-19 | Rotating window piece apparatus used for laser processing |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE60100216D1 (en) * | 2000-02-03 | 2003-06-05 | Ngk Insulators Ltd | Heating device |
| US20040253839A1 (en) * | 2003-06-11 | 2004-12-16 | Tokyo Electron Limited | Semiconductor manufacturing apparatus and heat treatment method |
| US20040266214A1 (en) * | 2003-06-25 | 2004-12-30 | Kyoichi Suguro | Annealing furnace, manufacturing apparatus, annealing method and manufacturing method of electronic device |
-
2011
- 2011-08-19 CN CN201110240538.6A patent/CN102280366B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE60100216D1 (en) * | 2000-02-03 | 2003-06-05 | Ngk Insulators Ltd | Heating device |
| US20040253839A1 (en) * | 2003-06-11 | 2004-12-16 | Tokyo Electron Limited | Semiconductor manufacturing apparatus and heat treatment method |
| US20040266214A1 (en) * | 2003-06-25 | 2004-12-30 | Kyoichi Suguro | Annealing furnace, manufacturing apparatus, annealing method and manufacturing method of electronic device |
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| Publication number | Publication date |
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| CN102280366B (en) | 2014-01-01 |
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| C14 | Grant of patent or utility model | ||
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Granted publication date: 20140101 Termination date: 20170819 |