CN102268729A - 450 type ingot furnace and ingot casting process thereof - Google Patents
450 type ingot furnace and ingot casting process thereof Download PDFInfo
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- CN102268729A CN102268729A CN2011102393459A CN201110239345A CN102268729A CN 102268729 A CN102268729 A CN 102268729A CN 2011102393459 A CN2011102393459 A CN 2011102393459A CN 201110239345 A CN201110239345 A CN 201110239345A CN 102268729 A CN102268729 A CN 102268729A
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Abstract
The invention discloses a 450 type ingot furnace and an ingot casting process thereof. The 450 type ingot furnace comprises a heat insulation cage, an upper furnace chamber, a lower furnace chamber and a plate heat exchanger. The top of the upper furnace chamber is provided with a furnace top heater; the bottom of the lower furnace chamber is provided with three graphite support columns, and the length of the three graphite support columns is 685-689 cm. The ingot casting process of the 450 type ingot furnace comprises the following steps of heating, melting, growing crystal, annealing and cooling; the heating time is 6-7 hours, and the heating temperature is 1540 DEG C; the melting time is 12-14 hours, and the melting temperature is 1430 DEG C; the crystal growing time is 16-18 hours, and the crystal growing temperature is 1370 DEG C; the annealing time is 5-6 hours, and the annealing temperature is 900 DEG C; and the cooling time is 12-14 hours, and the cooling temperature is 400 DEG C. Therefore, the problem on increasing the charge amount of the 450 type ingot furnace is solved. The 450 type ingot furnace has the characteristics of simple structure and low cost, and the ingot casting process is suitable for the energy saving reconstruction of the 450 type ingot furnace.
Description
Technical field
The present invention relates to a kind of 450 type ingot furnace and casting ingot process thereof, a kind of solar power silicon base battery polysilicon chip manufacturing process, it is specifically related to a kind of solar power silicon base battery that is applied to in the polysilicon chip manufacturing process, and 450 type ingot furnaces are increased to ingot furnace and the ingot casting production technique thereof of 550kg from charge amount 450kg.
Background technology
Polysilicon chip is a preparation solar power silicon base battery raw material commonly used.Polycrystalline silicon raw material becomes polycrystal silicon ingot through casting with ingot furnace, becomes strip and block, becomes polysilicon chip through slice processing again through cutting the ingot evolution then.So ingot furnace is a basic equipment of producing polycrystal silicon ingot.GT450 type polycrystalline silicon ingot or purifying furnace commonly used at present can only be produced the heavy silicon ingot of 420-450Kg, weighs this ingot furnace from energy consumption and yield ratio, and its energy-saving effect is not ideal enough with the aspect that reduces cost.
Increase the polysilicon charging capacity and then increase silicon ingot weight, not only can reduce the energy consumption while but also can reduce cost, this is the direction of silicon chip manufacturing enterprise effort.Improve the weight of polycrystal silicon ingot, common way is to buy large-scale new installation production large size specification silicon ingot.Because it is big that big specification silicon ingot is cut the silico briquette size that the ingot evolution comes out, thereby the section amount is also many, so the energy consumption of every average silicon chip is with regard to corresponding minimizing.At present, ingot furnace device fabrication both domestic and external enterprise is is designing and developing large-scale ingot furnace, satisfies market demand.
The casting polycrystalline silicon ingot technical process that ingot furnace manufacturing and ingot casting slice processing enterprise determine jointly is: 1. long brilliant (Growth) → 4. annealing of heating (Heat) → 2. fusing (Melt) → 3. (Anneal) → 5. cooling (Cool).In these five sections operations, carry out coding and technology controlling and process for convenience, each section operation break-down is become several work steps.As: will heat (Heat) operation break-down is 4 work steps, is denoted as H1, H2, H3, H4; Fusing (Melt) operation break-down is 12 work steps, is denoted as M1, M2 ... M12; Long brilliant (Growth) operation break-down is 8 work steps, is denoted as G1, G2 ... G8; Annealing (Anneal) operation break-down is 3 work steps, is denoted as A1, A2, A3; Cooling (Cool) operation break-down is 5 work steps, is denoted as C1, C2 ... C5.As control appearance " M3 " in the screen, just indicate the ingot casting system and enter fusing the 3rd work step; Equally, " G7 " just indicates the ingot casting system and enters long brilliant the 7th work step.
The photovoltaic industry is well-known, polycrystal silicon ingot is directed column crystallization body, the key of ingot furnace equipment is the thermal field design, and thermal field is by graphite heater, heat-insulation cage, graphite plate heat exchanger formations such as (claim DS-block piece, it are again the rack bearing plate of quartz crucible simultaneously).Its thermal field design need provide the polycrystalline silicon raw material fusing required heat energy, can conveniently control simultaneously and form specific temperature field, allows the polysilicon melt that the directed temperature condition that forms the column crystallization body can be arranged.At present, the domestic ingot furnace major part of China is the product from the import of U.S. GT Solar company, and GT450 type ingot furnace is exactly the product that the said firm makes.The principle of work of its polycrystalline silicon ingot or purifying furnace is: polycrystalline silicon material is incorporated with in the quartz crucible of silicon nitride coating, move then and be placed on the graphite plate heat exchanger (being the DS-block piece), under vacuum state, heat after closing bell, after treating that the silicon material melts fully, slowly upwards promote heat-insulation cage, the heat radiation that discharges during with the crystallization of silicon material by graphite plate heat exchanger forms a vertical thermograde in silicon material liquation to the lower furnace chamber inwall.This thermograde makes the silicon liquid in the crucible begin to solidify from the bottom, the upwards long brilliant last cylindrulite that forms from the melt bottom.Silicon liquid is come out of the stove through annealing, cooling after solidifying long brilliant the end, finishes the polycrystalline silicon ingot casting process.
Summary of the invention
Its purpose of the present invention just is to provide a kind of 450 type ingot furnace and casting ingot process thereof, solves the problem that 450 type ingot furnaces increase charge amount.Have characteristics simple in structure, that cost is low.Be applicable to the reducing energy consumption of 450 type ingot furnaces.
The technical scheme that realizes above-mentioned purpose and take comprises heat-insulation cage, last furnace chamber, lower furnace chamber and plate heat exchanger, last furnace chamber top is provided with the body of heater top heater, and the lower furnace chamber bottom is provided with three graphite pillar stiffeners, and described three graphite pillar stiffener length are 685～689cm.
Its casting ingot process comprises heating, fusing, long crystalline substance, annealing and cooling, and be 6-7 hour described heat-up time, and Heating temperature is 1540 ℃; Fusing time is 12-14 hour, and temperature of fusion is 1430 ℃; The long brilliant time is 16-18 hour, and long brilliant temperature is 1370 ℃; Annealing time is 5-6 hour, and annealing temperature is 900 ℃; Be 12-14 hour cooling time, and cooling temperature is 400 ℃.
Compared with prior art, of the present invention have a following beneficial effect.
Structure to existing GT450 type ingot furnace is transformed, make the 1-5cm that effectively utilized the space than the raising before transforming of thermal field, thereby realize improving the target of ingot casting weight, improved GT450 type ingot furnace is increased to from charge amount 450Kg in the past can adorn 550kg silicon material, so, GT450 type ingot furnace is 550 type ingot furnaces with regard to transformation and upgrade, has characteristics simple in structure, that cost is low.
Description of drawings
The invention will be further described below in conjunction with accompanying drawing.
Accompanying drawing is this apparatus structure schematic front view.
Embodiment
Comprise heat-insulation cage 1, last furnace chamber 2, lower furnace chamber 3 and plate heat exchanger 4, last furnace chamber 2 tops are provided with
The body of heater top heater, the lower furnace chamber bottom is provided with three graphite pillar stiffeners 5, and as shown in drawings, described three graphite pillar stiffener 5 length are 685～689cm.
Four corners of described body of heater top heater are provided with 2-4 boron nitride nut.
Casting ingot process comprises heating, fusing, long crystalline substance, annealing and cooling, and be 6-7 hour described heat-up time, and Heating temperature is 1540 ℃; Fusing time is 12-14 hour, and temperature of fusion is 1430 ℃; The long brilliant time is 16-18 hour, and long brilliant temperature is 1370 ℃; Annealing time is 5-6 hour, and annealing temperature is 900 ℃; Be 12-14 hour cooling time, and cooling temperature is 400 ℃.
Embodiment, the silicon ingot of buying large-scale new installation production large size specification is a measure, but the funds spending is big; And existing device is carried out structure of modification, and improving production capacity is another important method, its economy is good, cost is low.
Content of the present invention: 1) structure of existing GT450 type ingot furnace is carried out local flow improvement, make ingot furnace casting silicon ingot weight be increased to 550kg from 450kg.Local flow improvement to GT450 type ingot furnace structure is: three graphite pillar stiffeners are cut, and it is the contact surface that links to each other with graphite block plate heat exchanger that cylinder is supported in cutting; Make graphite pillar stiffener length shorten to 685～689cm, prescind and be of a size of 1-5cm from 690cm; After finishing, cutting needs to keep the planarization of section.After the graphite pillar stiffener is prescinded, the plate heat exchanger 1-5cm that descended, thus increase the vertical range that itself and top heater are effectively utilized; In addition, four corners in top heater respectively increase 2-4 boron nitride nut.This purpose is that the crucible cover plate of the crucible top after preventing from the to increase back that deforms when high temperature dwindles with the spacing of electric heater and the arcing phenomenon takes place.So the distance of crucible upper cover plate will remain on 2-4.5cm with the distance of top heater is minimum.Because graphite plate heat exchanger decline 1-5cm, the space ratio that effectively utilizes of furnace chamber thermal field is transformed preceding raising 1-5cm, so the corresponding increase with volume in its space of vessels crucible, the throwing stove weight of silicon material can be increased to 550kg from 450kg, helps the target that many chargings realize improving silicon ingot weight.
2) quartz crucible is of a size of 878*878*420mm during casting 450kg polycrystal silicon ingot, and the quartz crucible size is changed into 878*878*480mm during casting 550kg polycrystal silicon ingot; Meanwhile, the skin that is placed in quartz crucible plays protects the plumbago crucible size of quartz crucible effect also to make same change, becomes 918*918*538mm from 918*918*508mm, makes its volume can adapt to the requirement of loading the 550kg polycrystalline silicon material.
3) at the local flow improvement of finishing ingot furnace and after loading the change of silicon material crucible size, need adjust, make it to be fit to the ingot casting needs of 550kg polycrystalline silicon material casting ingot process.By fusion stage thermal field analysis in the GT450 type ingot furnace and 550kg silicon material being melted fully the calculating of institute's heat requirement and time, on the basis of original 450kg casting ingot process, increase the time of fusing (M3 i.e. the 3rd work step), be increased to 420 minutes from 360 minutes; By the brilliant stage thermal field of 450 type ingot casting furnace superintendents is analyzed and silicon ingot heat radiation situation analysis, consider that moving down of graphite plate heat exchanger will shorten its heat-dissipating distance, the increase heat dissipation capacity; Use for reference the 450kg casting ingot process simultaneously, on the basis of 550kg that feeds intake, increase the time of long brilliant (G7 i.e. the 7th work step), adjust the range of lift of heat-insulation cage at (G1, G2, G3, G4, the G5 are first, second, third and fourth, five work steps) in long brilliant stage simultaneously, the processing parameter adjustment of producing 550kg and 450kg silicon ingot is as showing shown in the 1-1.
Because the thermal field space increases, the shared corresponding increase in space of quartz crucible of charging with volume, increased the height and the weight of crucible charge, improved GT450 type ingot furnace charge amount is increased to 550kg by 450Kg, and GT 450 type ingot furnace transformation and upgrade become 550 type ingot furnaces.
Table 1-1 550kg casting ingot process and the contrast of 450kg casting ingot process
The available spatial altitude of thermal field is 167.2cm before the GT 450 type ingot furnace transformations, and transforming the available spatial altitude of back thermal field is 168.2-172.2cm, and the crucible after guaranteeing to increase can effectively be contained in the furnace chamber.
After finishing GT450 type ingot furnace structure of modification, need to carry out the casting ingot process design at the silicon ingot of producing 550kg.The technical process of casting polycrystalline silicon ingot is: 1. long brilliant (Growth) → 4. annealing of heating (Heat) → 2. fusing (Melt) → 3. (Anneal) → 5. cooling (Cool).Five megastage of ingot casting process temperature range is, 1540 ℃ of heating-fusings, and brilliant 1430 ℃ of fusing-length, 1370 ℃ of long crystalline substance-annealing, 400 ℃ on ingot is cooled off-goes out in 900 ℃ of annealing-coolings.
Heating (Heat) activity time is 6-7 hour; Fusing (Melt) activity time is 12-14 hour; Long brilliant (Growth) activity time is 16-18 hour; Annealing (Anneal) activity time 5-6 hour; Cooling (Cool) activity time 12-14 hour.The silicon liquid temp is when being lower than 1414 ℃, and crystal just begins growth.The whole ingot casting time is 51-59 hour.
Claims (3)
1. type ingot furnace, comprise heat-insulation cage (1), last furnace chamber (2), lower furnace chamber (3) and plate heat exchanger (4), last furnace chamber (2) top is provided with the body of heater top heater, lower furnace chamber (3) bottom is provided with three graphite pillar stiffeners (5), it is characterized in that described three graphite pillar stiffeners (5) length is 685～689cm.
2. the described a kind of 450 type ingot furnaces of root a tree name claim 1 is characterized in that four corners of described body of heater top heater are provided with 2-4 boron nitride nut.
3. the described a kind of 450 type ingot furnace casting ingot process of root a tree name claim 1 comprise heating, fusing, long crystalline substance, annealing and cooling, it is characterized in that be 6-7 hour described heat-up time, and Heating temperature is 1540 ℃; Fusing time is 12-14 hour, and temperature of fusion is 1430 ℃; The long brilliant time is 16-18 hour, and long brilliant temperature is 1370 ℃; Annealing time is 5-6 hour, and annealing temperature is 900 ℃; Be 12-14 hour cooling time, and cooling temperature is 400 ℃.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102776556A (en) * | 2012-04-01 | 2012-11-14 | 江西赛维Ldk太阳能高科技有限公司 | Polycrystalline silicon ingot and preparation method thereof as well as polycrystalline silicon wafer |
| CN102925958A (en) * | 2012-08-16 | 2013-02-13 | 江西旭阳雷迪高科技股份有限公司 | Method for improving poly-crystal quality by using re-melting technology |
| CN103046129A (en) * | 2013-01-28 | 2013-04-17 | 天津英利新能源有限公司 | Polycrystalline silicon ingot casting process |
| CN103668427A (en) * | 2013-12-13 | 2014-03-26 | 英利集团有限公司 | Method for casting large-sized silicon ingot |
| CN104131341A (en) * | 2014-08-14 | 2014-11-05 | 无锡尚品太阳能电力科技有限公司 | High-efficient process for manufacturing polycrystalline silicon cast ingots |
| CN105671634A (en) * | 2016-04-08 | 2016-06-15 | 江西旭阳雷迪高科技股份有限公司 | Method for prolonging service life of polycrystalline silicon chip minority carrier and reducing dislocation of polycrystalline silicon chip |
| CN105780109A (en) * | 2016-04-08 | 2016-07-20 | 江西旭阳雷迪高科技股份有限公司 | Device and method for improving edge grain tilting growth of polycrystalline ingot furnace |
| CN109853035A (en) * | 2019-04-19 | 2019-06-07 | 晶科能源有限公司 | Crucible and the polycrystalline silicon ingot casting method for using the crucible |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101880911A (en) * | 2010-04-29 | 2010-11-10 | 江西旭阳雷迪高科技股份有限公司 | Polycrystalline silicon ingot casting process |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101880911A (en) * | 2010-04-29 | 2010-11-10 | 江西旭阳雷迪高科技股份有限公司 | Polycrystalline silicon ingot casting process |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102776556A (en) * | 2012-04-01 | 2012-11-14 | 江西赛维Ldk太阳能高科技有限公司 | Polycrystalline silicon ingot and preparation method thereof as well as polycrystalline silicon wafer |
| CN102776556B (en) * | 2012-04-01 | 2015-07-01 | 江西赛维Ldk太阳能高科技有限公司 | Polycrystalline silicon ingot and preparation method thereof as well as polycrystalline silicon wafer |
| CN102925958A (en) * | 2012-08-16 | 2013-02-13 | 江西旭阳雷迪高科技股份有限公司 | Method for improving poly-crystal quality by using re-melting technology |
| CN103046129A (en) * | 2013-01-28 | 2013-04-17 | 天津英利新能源有限公司 | Polycrystalline silicon ingot casting process |
| CN103046129B (en) * | 2013-01-28 | 2015-10-07 | 天津英利新能源有限公司 | Polycrystalline silicon casting ingot process |
| CN103668427A (en) * | 2013-12-13 | 2014-03-26 | 英利集团有限公司 | Method for casting large-sized silicon ingot |
| CN103668427B (en) * | 2013-12-13 | 2016-02-03 | 英利集团有限公司 | The method of casting large size silicon ingot |
| CN104131341A (en) * | 2014-08-14 | 2014-11-05 | 无锡尚品太阳能电力科技有限公司 | High-efficient process for manufacturing polycrystalline silicon cast ingots |
| CN105671634A (en) * | 2016-04-08 | 2016-06-15 | 江西旭阳雷迪高科技股份有限公司 | Method for prolonging service life of polycrystalline silicon chip minority carrier and reducing dislocation of polycrystalline silicon chip |
| CN105780109A (en) * | 2016-04-08 | 2016-07-20 | 江西旭阳雷迪高科技股份有限公司 | Device and method for improving edge grain tilting growth of polycrystalline ingot furnace |
| CN109853035A (en) * | 2019-04-19 | 2019-06-07 | 晶科能源有限公司 | Crucible and the polycrystalline silicon ingot casting method for using the crucible |
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Application publication date: 20111207 |