CN102268705B - Method for preparing electronic packaging composites with laminated structure - Google Patents
Method for preparing electronic packaging composites with laminated structure Download PDFInfo
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- CN102268705B CN102268705B CN2011101849017A CN201110184901A CN102268705B CN 102268705 B CN102268705 B CN 102268705B CN 2011101849017 A CN2011101849017 A CN 2011101849017A CN 201110184901 A CN201110184901 A CN 201110184901A CN 102268705 B CN102268705 B CN 102268705B
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Abstract
The invention discloses a method for preparing electronic packaging composites with a laminated structure. The method comprises the following steps of: step 1, carrying out pre-treatment on a cathode plate and anode plates; step 2, horizontally arranging two anode plates and one cathode plate in an electroplating device, and arranging the cathode plate between the two anode plates; step 3, adding a plating solution to the electroplating device, electroplating the cathode plate by alternatively using a diamond/metal composite electroplating method and an ordinary metal electroplating method, and turning the cathode plate to obtain the electronic packaging composites with metal layers and diamond/metal layers in alternative arrangement. The method disclosed by the invention is simple to operate and realizes the continuous preparation for the laminated structure; and the automatic control in the entire preparation process can be realized basically and the method is beneficial to large-scale production and realization of industrialization.
Description
Technical field
The present invention relates to a kind of preparation method with electronic packaging composite material of laminate structure, related field is the electronic package material field.
Background technology
Electronic package material refers to the material in order to the substrate of support, protection semi-conductor chip and electronic circuit, base plate, shell; be mainly used in electron device; in the components and parts such as highpowerpulse microwave tube, laser diode, integrated circuit modules, power electronic devices, MCM, CPU, with Si, GaAs, Al
2o
3be complementary with electronic materials such as BeO, and there is the effect of heat radiation.Desirable electronic package material need meet following requirement: have high thermal conductivity, the dissipation of heat produced when in time semi-conductor chip being worked is gone out, and prevents that device lost efficacy because of overheated; The chips such as thermal expansivity and silicon, gallium arsenide and substrate material are complementary, and avoid the thermal stress damage of chip; Enough strength and stiffness are arranged, support, protect chip; Cost is low as far as possible, meets the commercialization demand; The special occasions density of material needs as far as possible little (in aerospace equipment, mobile communication equipment).
Yet in today of microelectronics high speed development, semiconductor integrated circuit package density is increasing, its thermal conductivity of electronic package material commonly used and thermal expansivity far can not meet the demands, therefore the Development of Novel electronic package material becomes one of key of development of electronic devices.As the new generation product of microelectronics Packaging heat sink material, metal-base composites, except having the good characteristics such as high heat conduction and low bulk, also has easy processing, the characteristics of satisfactory mechanical property and conduction.Diamond is the highest material of known occurring in nature thermal conductivity, and the single-crystal diamond thermal conductivity can reach 2000W/ (mK), and its thermal expansivity is also very low.But only have diamond to be difficult for making packaged material, price is also too expensive, therefore desirable selection is that diamond and other materials are compound, obtains and comprises adamantine matrix material, and wherein selecting preferably is the electronic packaging composite material for preparing diamond and metal composite.Copper, silver, aluminium have best conduction and the capacity of heat transmission in metal, diamond and copper, silver and aluminium are compound can guarantee that prepared material has higher heat conductivility, the less thermal expansivity of while diamond, can guarantee that obtained material has again low expansion character, be therefore a kind of desirable selection.
At present, the main preparation methods of the resulting electronic packaging composite material of the metal composite such as diamond and copper has powder metallurgic method, stacked Composite method, mechanical alloying method, the molten method of oozing.These methods are not apparatus expensive, with high costs, are exactly that product size is difficult to do greatly, and complicated operation is wayward, and the product density is not high.
Summary of the invention
The object of the present invention is to provide a kind of preparation method with electronic packaging composite material of laminate structure, improve product and obtain efficiency, reduce costs, realize obtaining fast the electronic packaging composite material of the layered composite structure of metal level and diamond/metal level alternative arrangement (metal-diamond/metal).
The technical solution adopted for the present invention to solve the technical problems is:
A kind of preparation method with electronic packaging composite material of laminate structure, comprise the steps:
The first step, anticathode plate, positive plate carry out pre-treatment;
Second step arranges two positive plates of level and a negative plate in electroplating device, and negative plate is arranged between two positive plates;
The 3rd step, add plating solution in electroplating device, employing be used alternatingly that diamond/metal composite is electroplated and the plain metal electric plating method at the enterprising electroplating of described negative plate, by the electronic packaging composite material of upset negative plate acquisition diamond/metal level and metal level alternative arrangement.
Further, the diamond of described employing/metal composite electroplating technology refers to diamond and metallic copper, silver and the Composite Coatings that contains other micro-copper or silver alloys; The diamond particles granularity that plating adds in crossing is 0.1 μ m～200 μ m, diamond particles in each diamond/metal level content for being less than 75vt%.
Further, the diamond particles added in plating solution, but a small amount of easily carbonization elements of its outside plating, this easy carbonization elements comprises one or more in chromium (Cr), boron (B), titanium (Ti), zirconium (Zr), iron (Fe), molybdenum (Mo), hafnium (Hf), vanadium (V).
Further, can add a small amount of easily carbonization elements particle or carbide in plating solution, as one or more in chromium, boron, chromium carbide.
Further, in plating solution, can add on a small quantity can with copper or silver-colored codeposition, the raw material of separating out easy carbonization elements, as one or more in chromic anhydride, titanium salt, zirconates.
Further, described negative plate composition is fine copper (silver), copper (silver) and easy carbonization elements alloy, diamond and copper (silver) mixed plate, diamond and copper (silver) and easy carbonization elements mixed plate, the diamond of the easy carbonization elements of plating and the mixed plate of copper (silver).Different pole plates, corresponding different solution compositions.
Further, the electronic packaging composite material that described the 3rd step is electroplated, carry out the annealing process processing, improves bonding strength, reduces stress, increased thermal conductivity.
Further, described annealing process is: the electronic packaging composite material product is put into to High Temperature Furnaces Heating Apparatus, is 500-1080 ℃ in temperature, and argon gas is annealed for protecting under the gas condition, or carries out vacuum heat treatment annealing.
Employing is used alternatingly (layered composite structure) electronic packaging composite material that diamond composite plating and plain metal electric plating method obtain metal-diamond/metal fast.For negative plate one side, for some time is that diamond, metal composite are electroplated, and obtains diamond/metal composite layer, and for some time is metal lining only, obtains metal level.Two kinds of coating can hocket, and the principle of utilization is due to the gravity reason, for the negative plate of horizontal positioned, easily obtain composite deposite above pole plate, be difficult to obtain composite deposite below negative plate, but, by the double anode plate, below negative plate, can obtain metal plating.Therefore, electroplated metal layer and composite deposite, improve preparation speed simultaneously.Through plating after a while, by the negative plate upset, can obtain the electronic packaging composite material of required metal level and diamond/metal level alternative arrangement.
Described electroplating device, have two anodes, can be to adopt negative electrode rotate separately and regulate plating solution by water pump, realizes the pump formula metal-diamond/metal composite plating device of metal-diamond/metal layer structure; Can be also that the independent rotation of negative electrode or negative electrode synchronize with coating bath that rotating combines realizes the rotary metal-diamond/metal composite plating device of metal-diamond/metal layer structure.
Laminate structure, its advantage is to be combined into various three-dimensional structures with two-dirnentional structure, the i.e. use by layer is reduced to two-dimentional solution by three-dimensional problem, make the adjusting factor clear and definite and various (as the material proportion of each layer, the thickness of layer etc.), the laminate structure electronic package material of metal level and diamond/metal level alternative arrangement is easier to welding in addition, therefore, under the prerequisite that meets the electronic package material basic demand, the laminate structure of metal level and diamond/metal level alternative arrangement is for selecting preferably.
It should be noted that, method of the present invention, not only can be applied to prepare electronic packaging composite material, also can be applicable to the preparation of other matrix materials.
The invention has the beneficial effects as follows, this preparation method has following advantage:
1, simple to operate, realized the continuous production of laminate structure: not only in each electroplating process, can obtain metal level and diamond/metal level simultaneously; And realized working continuously of whole preparation process, and can obtain continuously the laminate structure of the required number of plies, complete the preparation of whole material.
2, can realize the automatic control of whole preparation process, production efficiency is high, and production cost is low, is conducive to carry out scale operation and realizes industrialization.
3, by the control to the control of negative and positive electrode current and negative electrode flip-flop transition, realize that thickness of coating controls and the coating alternative arrangement, make the control of preparation process simple, accurate.
the accompanying drawing explanation:
Fig. 1 is the schematic diagram that the present invention electroplates;
Fig. 2 is a kind of pump formula metal-diamond/metal composite plating device schematic diagram in the present invention;
Fig. 3 is a kind of rotary metal-diamond/metal composite plating device schematic diagram in the present invention.
embodiment:
The specific embodiment of the invention step is:
The first step, anticathode plate, positive plate carry out pre-treatment, comprise oil removing, rust cleaning etc.;
Second step arranges two positive plates of level and a negative plate in electroplating device, and negative plate is fixed in electroplating device, between two positive plates;
The 3rd step adds plating solution in electroplating device, and employing is used alternatingly diamond/metal composite plating and the plain metal electric plating method is electroplated on described negative plate, obtains the electronic packaging composite material of diamond/metal level and metal level alternative arrangement.
Before adding diamond particles, first diamond particles is carried out to pre-treatment, comprise oil removing, alligatoring, sensitization activation etc., can be first in the easy carbonization elements of diamond surface plating.After the 3rd step, obtained matrix material is carried out to anneal, react with adamantine to eliminate stress and to increase easy carbonization elements, increase the wetting property of diamond and metal.
Fig. 1 is schematic diagram of the present invention, and in figure, 1 is diamond particles, and 2 is metal ion, and 3 is electronics, and 4 is negative electrode, and 5 is the atoms metal (size of each several part does not reflect the ratio of its actual size) be reduced; The negative electrode upper surface obtains diamond/metal level and lower surface acquisition metal level.
Embodiment mono-:
In the present embodiment, adopt the electroplating device shown in Fig. 2 to manufacture the laminate structure electronic packaging composite material.
This device comprises plating tank 15, water pump 6, stirs module 10, current control module 17, temperature control module 7, negative electrode Link Port 18, two anodic bonding mouths 16,14, fluid inlet 12 and diamond particles entrances 11.
This device plating tank 15---it is shaped as wide at the top and narrow at the bottom, and the narrowest place connects 16,14 and negative plate interfaces 18 of 6, two positive plate interfaces of water pump, negative electrode 8 between two anodes 13, three pole plate horizontal positioned while requiring to use; Stir module (only showing with agitator 10 in figure) automatic stirring when particle is added fashionable and water pump 6 and upwards inputted plating solution and particle by diamond particles entrance 11, agitator 10 adopts the telescopic moving design, agitator 10 variable-lengths, can move along plating tank 15 tops, the end villous, interrupt plating at plating after for some time, with fine hair, cleans negative electrode, then continue plating, can control the planeness of diamond/metal level.Agitator 10 vertical portions are diamond particles entrance 11 simultaneously; Negative electrode Link Port 18, anodic bonding mouth 16 and 14, connect respectively negative plate and positive plate, the rotation of control cathode plate and bottom anode plate, and the rotation time interval can be set; Size of current between current control module 17 control cathodes and two anodes; Inwall has temperature control parts 7, according to design temperature, regulates in real time bath temperature.Button and indicating meter 9, in the plating tank outside, can show the data in electroplating process in real time, through button manually design temperature regulate in real time bath temperature.
Negative electrode is selected the fine copper plate that 0.15mm is thick, prepares diamond content in junior three diamond/copper layer and reduces gradually, the matrix material that diamond content increases gradually from the 4th diamond/copper layer.The diamond particles in the same size, mean sizes is 100 μ m, diamond particles average content in the diamond/copper layer is 50vt%.
The processing of cathode plate: use metal cleaner, 60 ℃, soak and clean oil removing; Add the proper amount of surfactant alkylphenol-polyethenoxy with dilute hydrochloric acid after washing, soak at room temperature 10min is with the rust cleaning oil removing.
Adopt electroless plating at diamond surface plating chromium, with 10%NaOH solution, boil 3～5min, oil removing, extremely neutral with deionized water rinsing, with 30%
solution boils 3～5min, and the alligatoring diamond is extremely neutral with deionized water rinsing; Configuration colloidal palladium solution, be put into the diamond after alligatoring in colloidal palladium solution, stirs 3～5min, with deionized water rinsing, to neutral, uses 30g/L's
solution reduction, stir 3～5min, extremely neutral with deionized water rinsing; Diamond particles is soaked in
16g/L,
11g/L,
10g/L,
4.5g/L,
in the solution of 10g/L, at 75 ℃ of lower chemical plating chromium; Afterwards, also dry to neutrality with deionized water rinsing.
Electroplate: plating solution is
250g/L,
50g/L,
70mg/L, N-Thiocarb polyoxyethylene glycol 0.2g/L, 40 ℃ of temperature, set 180 ° of every 100min negative electrode upsets, 5min outage before the upset each time, make the agitator elongation and move along the plating tank top cross, cleaning negative electrode upper surface, to control the planeness of diamond/metal level, agitator continues upset, electroplates after retracting.While electroplating for the first time, below negative electrode, with nonconducting organic membrane, cover, only on negative electrode, use composite plating method depositing diamond/copper layer.Afterwards, organic membrane is removed top and bottom are all conducted electricity, like this top and bottom plating simultaneously, and what realize above is the Composite Coatings of diamond/copper layer, is below the common plating of a metal refining copper.Rise in a junior three diamond/copper layer plating process and no longer add diamond, only when negative electrode overturns, make lower anode together overturn (making diamond thereon to sink to the bottom), smoke the diamond sunk to the bottom with pump; During the 4th diamond/copper layer of plating, add diamond one time, during then every negative electrode upset, adamantine addition increases, and the use of anode and pump is constant.
Take off negative plate, rinsing is also dry; The laminate structure product is put into to tube type high-temperature furnace, is 1060-1080 ℃ in temperature, and argon gas, for being annealed under protection gas condition, is beneficial to remove stress, promotes that Cr reacts with adamantine, and Reinforced Cu and adamantine combination, improve density and thermal conductivity.
Embodiment bis-:
In the present embodiment, adopt the electroplating device shown in Fig. 3 to manufacture the laminate structure electronic packaging composite material.
This device plating tank 25 is connected through main shaft 26 with support 28, plating tank 25 is capsule shape, bottom connects rotatable bottom 24, and inwall has temperature control parts 22 to regulate in real time bath temperature according to design temperature, and current control module 22 can control cathode and the rotation of main shaft; Two anodes 19 and 23 and negative electrodes 20 are arranged; Fluid inlet 27, between Anodic 19 and negative electrode 20, requires three pole plate horizontal positioned during use; Main shaft 26 passes through fixedly plating tank 25 of wheel casing 21, the rotation of electrolyzer 25 but also rotation that can control cathode 20 not only can have been controlled, electrolyzer 25 can be controlled respectively independent rotation with negative electrode 20, therefore can make that plating tank 25 is motionless and negative plate 20 rotates or negative plate 20 does not rotate separately and synchronously rotates with plating tank 25; Feed pathway 29 and liquid outlet channel 30 are all coaxial with main shaft 26.If need to before starting to plate new diamond/metal level, add diamond in the plating process at every turn, the negative electrode that first overturns adds again; According to circumstances suitably select coating bath whether to rotate, if do not need to add diamond, can make negative electrode and coating bath together overturn.
Negative electrode is selected the fine silver plate that 0.3mm is thick, and in the diamond/silver layer of preparation, diamond content reduces gradually.Add a small amount of boron particles in diamond particles, the diamond particles in the same size, mean sizes is 30 μ m, diamond particles average content in diamond/silver layer is 25vt%.
The processing of negative electrode silver plate: use metal cleaner, 60 ℃, soak and clean oil removing; Add the proper amount of surfactant alkylphenol-polyethenoxy with dilute hydrochloric acid after washing, soak at room temperature 10min is with the rust cleaning oil removing.
Electroplate: plating solution is
45g/L,
250g/L,
25g/L,
85g/L,
15 g/L, 25 ℃ of temperature, set every 80min negative electrode with 180 ° of the synchronous upsets of plating tank, so that the boron of the diamond sunk and minute quantity is utilized again, and realizes the minimizing successively of diamond content in each composite bed.While electroplating for the first time, the electric current that makes negative electrode and Xiayang interpolar is 0.Afterwards, make between negative electrode and upper and lower anode size of current consistent, top and bottom plating simultaneously like this, and what realize above is the Composite Coatings of diamond/silver layer, is below the common plating of a metal refining silver.No longer add diamond in the plating process.
Take off negative plate, rinsing is also dry; The laminate structure product is put into to high temperature hot pressing furnace, is 800-950 ℃ in temperature, and pressure is to carry out the hot pressing vacuum annealing under the 50MPa condition, be beneficial to remove stress, promote that boron reacts with adamantine, strengthen Ag and adamantine combination, improve density and thermal conductivity.
Embodiment tri-:
Adopt Fig. 2 shown device to manufacture the laminate structure electronic packaging composite material.
Negative electrode is selected the fine copper plate that 0.2mm is thick, prepares the laminate structure electronic packaging composite material that in the diamond/copper layer, diamond content reduces gradually.Add a small amount of chromium particle in diamond particles, the diamond particles in the same size, mean sizes is 180 μ m, chromium particle mean size 20 μ m, diamond particles average content in the diamond/copper layer is 50vt%.
The processing of cathode plate: use metal cleaner, 60 ℃, soak and clean oil removing; Add the proper amount of surfactant alkylphenol-polyethenoxy with dilute hydrochloric acid after washing, soak at room temperature 10min is with the rust cleaning oil removing.
Electroplate: plating solution is
220g/L,
65g/L,
70mg/L, N-Thiocarb polyoxyethylene glycol 0.2g/L, 40 ℃ of temperature, set 180 ° of every 120min negative electrode upsets, 5min outage before the upset each time, make the agitator elongation and, along the casing transverse shifting, clean the negative electrode upper surface, to control the planeness of diamond/metal level, agitator continues upset, electroplates after retracting; Lower anode and negative electrode overturn so that the chromium of the diamond sunk and minute quantity is utilized again simultaneously, and realize the minimizing successively of diamond content in each composite bed.While electroplating for the first time, the electric current that makes negative electrode and Xiayang interpolar is 0.Afterwards, make between negative electrode and upper and lower anode size of current suitable, top and bottom plating simultaneously like this, what wherein realize above is the Composite Coatings of diamond/copper layer, is below the common plating of a metal refining copper.No longer add diamond in the plating process, only when negative electrode overturns, make lower anode together overturn (making diamond thereon to sink to the bottom), smoke the diamond sunk to the bottom with pump.
Take off negative plate, rinsing is also dry; The laminate structure product is put into to tube type high-temperature furnace, is 800-1000 ℃ in temperature, and argon gas, for being annealed under protection gas condition, is beneficial to remove stress, promotes that chromium reacts with adamantine, strengthens copper and adamantine combination, improves density and thermal conductivity.
Embodiment tetra-:
Adopt Fig. 3 shown device to manufacture the laminate structure electronic packaging composite material.
Negative electrode is selected diamond that 0.2mm is thick and the mixed plate of copper, prepares in the diamond/copper layer laminate structure electronic packaging composite material that diamond content is consistent.Add a small amount of chromic anhydride in plating solution, the diamond particles in the same size, mean sizes is 100 μ m, diamond particles average content in the diamond/copper layer is 40vt%.
The processing of negative electrode mixed plate: use metal cleaner, 60 ℃, soak and clean oil removing; Add the proper amount of surfactant alkylphenol-polyethenoxy with dilute hydrochloric acid after washing, soak at room temperature 10min is with the rust cleaning oil removing.
Electroplate: plating solution is
220g/L,
68g/L,
5g/L,
6g/L, temperature 50 C, while electroplating for the first time, negative electrode and Shangyang electrode current are 0, after plating 110min, 180 ° of negative electrode upsets, add diamond one time, then make 180 ° of plating tank upsets, then make between upper and lower anode and negative electrode size of current suitable, thereby realize double-deck plating simultaneously.What the above realized is the Composite Coatings of diamond/copper layer, is below the common plating of a metal refining copper.The negative electrode that later all first overturns after having plated 110min adds diamond again, the upset plating tank, thus realize that each diamond/copper layer diamond content is consistent.
Take off negative plate, rinsing is also dry; The laminate structure product is put into to tube type high-temperature furnace, in temperature, be 900-1000 ℃, argon gas, for being annealed under protection gas condition, is beneficial to remove stress, promotes that chromium reacts with adamantine, strengthens copper and adamantine combination, improves density and thermal conductivity.
Embodiment five:
Adopt Fig. 2 shown device to manufacture the laminate structure electronic packaging composite material.
Negative electrode is selected the fine copper plate that 0.05mm is thick, prepares in the diamond/copper layer laminate structure electronic packaging composite material that diamond content is consistent.Add a small amount of chromium particle in diamond particles, chromium particle mean size 20 μ m, diamond particle size has two kinds, and mean sizes is respectively 180 μ m and 10 μ m, and the diamond surface plating that wherein mean sizes is 10 μ m has very thin titanium layer; Diamond particles average content in the diamond/copper layer is 75vt%.
The processing of cathode plate: use metal cleaner, 60 ℃, soak and clean oil removing; Add the proper amount of surfactant alkylphenol-polyethenoxy with dilute hydrochloric acid after washing, soak at room temperature 10min is with the rust cleaning oil removing.
Electroplate: plating solution is
220g/L,
65g/L,
70mg/L, N-Thiocarb polyoxyethylene glycol 0.2g/L, 40 ℃ of temperature, set 180 ° of every 120min negative electrode upsets, 5min outage before the upset each time, make the agitator elongation and, along the casing transverse shifting, clean the negative electrode upper surface, to control the planeness of diamond/metal level, agitator continues upset, electroplates after retracting; Lower anode and negative electrode overturn so that the chromium of the diamond sunk and minute quantity is utilized again simultaneously.While electroplating for the first time, the electric current that makes negative electrode and Xiayang interpolar is 0.Afterwards, note size of current between control cathode and upper and lower anode, so top and bottom can the while plating but plating speed difference, what wherein realize above is the Composite Coatings of diamond/copper layer, plating speed is fast, is below the common plating of a metal refining copper, and the sedimentation velocity of copper is slow.Finally obtain the diamond/copper layer thickness large, the layered composite structure of metal-diamond/metal that copper layer thickness is little.According to needing to add diamond, guarantee diamond content stablizing in the diamond/copper layer in the plating process.
Take off negative plate, rinsing is also dry; The laminate structure product is put into to tube type high-temperature furnace, is 950-1050 ℃ in temperature, and argon gas, for being annealed under protection gas condition, is beneficial to remove stress, promotes chromium, titanium to react with adamantine, strengthens copper and adamantine combination, improves density and thermal conductivity.
Finally explanation is, above embodiment is only unrestricted in order to technical scheme of the present invention to be described, other modifications that those of ordinary skills make technical scheme of the present invention or be equal to replacement, only otherwise break away from the spirit and scope of technical solution of the present invention, all should be encompassed in the middle of claim scope of the present invention.
Claims (7)
1. the preparation method with electronic packaging composite material of laminate structure, is characterized in that: comprise the steps:
The first step, anticathode plate, positive plate carry out pre-treatment;
Second step arranges two positive plates of level and a negative plate in electroplating device, and negative plate is arranged between two positive plates;
The 3rd step, add plating solution in electroplating device, employing be used alternatingly that diamond/metal composite is electroplated and the plain metal electric plating method at the enterprising electroplating of described negative plate, by the electronic packaging composite material of upset negative plate acquisition diamond/metal level and metal level alternative arrangement;
The diamond of described employing/metal composite electroplating technology refers to diamond and metallic copper, silver and the Composite Coatings that contains other micro-copper or silver alloys; The diamond particles granularity that plating adds in crossing is 0.1 μ m～200 μ m, diamond particles in each diamond/metal level content for being less than 75vt%.
2. a kind of preparation method with electronic packaging composite material of laminate structure as claimed in claim 1, it is characterized in that: the diamond particles added in plating solution, but a small amount of easily carbonization elements of its outside plating, described easy carbonization elements is one or more in chromium Cr, boron, titanium Ti, zirconium Zr, iron Fe, molybdenum Mo, hafnium Hf, vanadium V.
3. a kind of preparation method with electronic packaging composite material of laminate structure as claimed in claim 1 or 2, is characterized in that: can add a small amount of easily carbonization elements particle or carbide in plating solution.
4. a kind of preparation method with electronic packaging composite material of laminate structure as claimed in claim 1 or 2 is characterized in that: in plating solution, can add on a small quantity can with copper or silver-colored codeposition, the raw material of separating out easy carbonization elements.
5. a kind of preparation method with electronic packaging composite material of laminate structure as claimed in claim 1 is characterized in that: described negative plate composition is fine copper/silver, copper/silver and easily carbonization elements alloy, diamond and copper/silver-colored mixed plate, diamond and copper/silver and easy carbonization elements mixed plate, the diamond of the easy carbonization elements of plating and the mixed plate of copper/silver.
6. a kind of preparation method with electronic packaging composite material of laminate structure as claimed in claim 1 is characterized in that: the electronic packaging composite material that described the 3rd step is electroplated, carry out the annealing process processing.
7. a kind of preparation method with electronic packaging composite material of laminate structure as claimed in claim 6; it is characterized in that: described annealing process is: the electronic packaging composite material product is put into to High Temperature Furnaces Heating Apparatus; in temperature, be 500-1080 ℃; argon gas is annealed for protecting under the gas condition, or carries out vacuum heat treatment annealing.
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