CN102263179B - Light-emitting diode, backlight module and liquid crystal indicator - Google Patents
Light-emitting diode, backlight module and liquid crystal indicator Download PDFInfo
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- CN102263179B CN102263179B CN201010194823.4A CN201010194823A CN102263179B CN 102263179 B CN102263179 B CN 102263179B CN 201010194823 A CN201010194823 A CN 201010194823A CN 102263179 B CN102263179 B CN 102263179B
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Abstract
The invention discloses a kind of light-emitting diode, backlight module and liquid crystal indicator.Liquid crystal indicator comprises backlight module and display panels.Backlight module comprises optical sheet and multiple light-emitting diode.Light-emitting diode comprises semiconductor layer, the first electrode and the second electrode.Semiconductor layer comprises the first type doping semiconductor layer, luminescent layer and Second-Type doping semiconductor layer, and wherein luminescent layer is between the first type doping semiconductor layer and Second-Type doping semiconductor layer.First electrode is electrically connected at the first type doping semiconductor layer, second electrode is electrically connected at Second-Type doping semiconductor layer, and the second electrode is grating, be suitable for allowing the light with the first polarization direction pass through, and be suitable for reflecting the light with the second polarization direction, wherein the first polarization direction is perpendicular to the second polarization direction.
Description
Technical field
The present invention relates to a kind of light-emitting diode, backlight module and liquid crystal indicator, and particularly relate to light-emitting diode, backlight module and liquid crystal indicator that a kind of electrode is grating.
Background technology
Along with the progress of modern semiconductors science and technology, light-emitting diode is widely used, to provide the light source needed for electronic installation, such as: traffic sign, large-scale billboard, scanner, liquid crystal indicator etc.
Generally common light-emitting diode belongs to a kind of semiconductor element, and its material typically uses iii-v element as gallium phosphide (GaP), GaAs (GaAs) etc.The principle of luminosity of light-emitting diode converts electrical energy into light, namely applies electric current to above-mentioned compound semiconductor, discharged by energy by the combination in electronics, hole with the kenel of light, and then reach luminous effect.(10 are about soon because light-emitting diode has reaction speed
-9second), volume is little, power-saving, pollute low (not containing mercury), reliability is high, be applicable to the advantages such as volume production, therefore have and replace traditional fluorescent lamp and the trend of incandescent lamp bulb with light-emitting diode.
But, when light-emitting diode is applied in the optical system needing polarization light source (such as liquid crystal indicator), then must add polarization conversion member in optical system, the light source that light-emitting diode is produced produces the light with particular polarization direction by polarization conversion member.Fig. 1 is the schematic diagram of known a kind of liquid crystal indicator.Liquid crystal indicator 100 comprises backlight module 110, multiple polarizer 120 and display panels 130.The light that backlight module 110 produces, does not have special polarization state, but comprises P polarization and polarize the light combined with S, therefore needs with polarizer 120 to obtain polarization light source.
But, polarizer 120 not only makes the cost of overall liquid crystal indicator 100 increase, and when through polarization conversion, the luminous energy of polarised direction parallel polarization sheet 120 penetrating shaft penetrates polarizer 120, the light of the penetrating shaft of polarised direction vertical polarization sheet 120 then can be polarized sheet 120 and absorbed, therefore the light only having part blocks most light by polarizer 120.Therefore, make the light source utilization rate of backlight module 110 on the low side, also thus cause the energy use efficiency of liquid crystal indicator 100 not high.
Summary of the invention
The invention provides a kind of light-emitting diode, in order to produce the light source with single polarization direction.
The present invention separately provides a kind of backlight module, in order to provide the light source of single polarization.
The present invention provides again a kind of liquid crystal indicator, has preferred light utilization efficiency.
The present invention proposes a kind of light-emitting diode, comprises semiconductor layer, the first electrode and the second electrode.Semiconductor layer comprises the first type doping semiconductor layer, luminescent layer and Second-Type doping semiconductor layer, and wherein luminescent layer is between the first type doping semiconductor layer and Second-Type doping semiconductor layer.First electrode is electrically connected at the first type doping semiconductor layer, and the second electrode is electrically connected at Second-Type doping semiconductor layer.Second electrode is grating, is suitable for allowing the light with the first polarization direction pass through, and is suitable for reflecting the light with the second polarization direction.Wherein, the first polarization direction is perpendicular to the second polarization direction.
In an embodiment of the present invention, light-emitting diode also comprises substrate.First type doping semiconductor layer is positioned on substrate, and luminescent layer is positioned on the subregion of the first type doping semiconductor layer, and Second-Type doping semiconductor layer is positioned on luminescent layer.First electrode is positioned at the first type doping semiconductor layer and does not configure on the region of luminescent layer, and the second electrode is positioned on Second-Type doping semiconductor layer.In addition, the material of above-mentioned substrate such as comprises sapphire.In addition, above-mentioned substrate such as has surface coarsening structure.
In an embodiment of the present invention, above-mentioned luminescent layer has surface coarsening structure.
In an embodiment of the present invention, the material of above-mentioned semiconductor layer comprises InGaN (InGaN), be suitable for sending the ruddiness that wavelength is 625 ~ 630 nanometers (nanometer, nm), now the grating space of this second electrode is less than 390 nanometers.
In an embodiment of the present invention, the material of above-mentioned semiconductor layer comprises InGaN, is suitable for sending the green glow that wavelength is 530 ~ 535 nanometers, and now the grating space of this second electrode is less than 290 nanometers.
In an embodiment of the present invention, the material of above-mentioned semiconductor layer comprises gallium nitride (GaN), and be suitable for sending the blue light that wavelength is 450 ~ 470 nanometers, now the grating space of this second electrode is less than 255 nanometers.
In an embodiment of the present invention, the first above-mentioned electrode and the material of the second electrode comprise metal.
In an embodiment of the present invention, light-emitting diode also comprises encapsulation sign, in order to show the first polarization direction or the second polarization direction.
The present invention separately proposes a kind of backlight module, comprises optical sheet and multiple above-mentioned light-emitting diode.Optical sheet has incidence surface and exiting surface, and these light-emitting diodes are configured in by incidence surface.
In the backlight module of embodiments of the invention, above-mentioned optical sheet is light guide plate, and incidence surface is adjacent to exiting surface.
In the backlight module of embodiments of the invention, above-mentioned optical sheet is diffuser plate, and incidence surface is relative with exiting surface.
The present invention provides again a kind of liquid crystal indicator, comprises above-mentioned backlight module and display panels.Display panels is configured on exiting surface.
In the liquid crystal indicator of embodiments of the invention, also comprise the first polarizer, be configured on display panels, and away from backlight module.
In the liquid crystal indicator of embodiments of the invention, also comprise the second polarizer, be configured between this display panels and this backlight module.
The present invention adopts electrode to be the light-emitting diode of grating, therefore by the characteristic of grating, make light-emitting diode produce the light source with single polarization direction, and this light-emitting diode can be applicable to backlight module.By using this backlight module in liquid crystal indicator, significantly improve the service efficiency of light source.
For above-mentioned feature and advantage of the present invention can be become apparent, preferred embodiment cited below particularly, and coordinate accompanying drawing, be described in detail below.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of known a kind of liquid crystal indicator.
Fig. 2 A is the structural representation of the light-emitting diode of the embodiment of the present invention.
Fig. 2 B is the schematic diagram of light-emitting diode when luminescence of Fig. 2 A.
Fig. 3 A is the schematic diagram of the backlight module of embodiments of the invention.
Fig. 3 B is the partial top view of the backlight module of Fig. 3 A.
Fig. 3 C is the profile of the backlight module of another embodiment of the present invention.
Fig. 4 is the schematic diagram of the liquid crystal indicator of embodiments of the invention.
Description of reference numerals
100: liquid crystal indicator
110: backlight module
120: polarizer
130: display panels
200: light-emitting diode
210: substrate
220: semiconductor layer
222: the first type doping semiconductor layers
224: luminescent layer
226: Second-Type doping semiconductor layer
230: the first electrodes
240: the second electrodes
250: wire
260: encapsulation indicates
300,300 ': backlight module
310,310 ': optical sheet
312,312 ': incidence surface
314,314 ': exiting surface
320: framework 400: liquid crystal indicator
410: display panels
420: the first polarizers
430: the second polarizers
440: housing
L: light
Lp: the light with the first polarization direction
Ls: the light with the second polarization direction
P: the first polarization direction
Re: luminous again
Rs, Rs ': scattered light
S: the second polarization direction
T: grating space
Embodiment
Fig. 2 A is the structural representation of the light-emitting diode of the embodiment of the present invention.Please refer to Fig. 2 A, light-emitting diode 200 comprises substrate 210, semiconductor layer 220, first electrode 230 and the second electrode 240.Substrate 210 material can be sapphire, carborundum, silicon, GaAs or aluminium nitride, and the present invention does not limit it.
Semiconductor layer 220 comprises the first type doping semiconductor layer 222, luminescent layer 224 and Second-Type doping semiconductor layer 226.First type doping semiconductor layer 222 is arranged on substrate 210, luminescent layer 224 is arranged on the subregion of the first type doping semiconductor layer 222, and between the first type doping semiconductor layer 222 and Second-Type doping semiconductor layer 226, and Second-Type doping semiconductor layer 226 is arranged on luminescent layer 222.
First electrode 230 is arranged at the first type doping semiconductor layer 222 and does not configure on the region of luminescent layer 224, and is electrically connected at the first type doping semiconductor layer 222.Second electrode 240 is arranged on Second-Type doping semiconductor layer 226, and is electrically connected at Second-Type doping semiconductor layer 226.Wherein, the second electrode 240 is made into grating.The material of the first electrode 230 and the second electrode 240 can be aluminium, molybdenum or other electric conducting material.
The light that traditional light-emitting diode sends for avoiding metal to cover light-emitting diode, meaning is and is lifted out light quantity, therefore cannot use common metal and adopt transparency electrode (tin indium oxide, IndiumTinOxide, ITO); But the resistance of transparency electrode is excessive, so need with larger voltage driven light-emitting diode.Make the temperature of light-emitting diode increase thus, again because of light-emitting diode temperature rise then its luminosity then can decline, and part energy with the form loss of heat energy.
The present invention is because being patterned as raster-like by the second electrode 240, so the second electrode 240 can use common metal, the light that light-emitting diode 200 is sent can by the second electrode 240 bright dipping of raster-like can not cover by metal, therefore the opaque but metal that resistance is lower can be selected to use as the second electrode 240, light-emitting diode 200 can with less voltage driven thus, to reduce temperature when light-emitting diode 200 operates, and further promote the luminosity of light-emitting diode 200.
Illustrate further, in the present embodiment, light-emitting diode 200 also comprises the wire 250 being connected to the first electrode 230 and the second electrode 240 again.Apply a voltage to the first electrode 230 and the second electrode 240 via wire 250, produce electronics and hole to drive the first type doping semiconductor layer 222 respectively with Second-Type doping semiconductor layer 226.Meanwhile, to be combined in luminescent layer 224 and luminous by the movement in electronics and hole.Fig. 2 B is the schematic diagram of light-emitting diode when luminescence of Fig. 2 A.Please refer to Fig. 2 B, the light L that luminescent layer 224 sends does not have single polarization direction, but the first polarization direction P (such as P polarized light) and the second polarization direction S (such as S polarized light) can be divided into, and wherein the first polarization direction P perpendicular to the second polarization direction S.
By the effect of the second electrode 240 presented with the form of grating, the light Lp in light L with the first polarization direction P is passed through, and the light Ls in light L with the second polarization direction S is then reflected.In the present embodiment, when the light Ls with the second polarization direction S runs into luminescent layer 224 after optical grating reflection, just scattered light Rs can be produced.The polarization direction of this scattered light Rs is no longer same as light Ls originally, but there is the first polarization direction P and the second polarization direction S simultaneously, therefore when light Rs incides grating, the some light in light Rs with the first polarization direction P then can penetrate grating, promotes the light emission rate of polarized light.In addition, can on luminescent layer 224 design surface alligatoring structure (not illustrating) to add the efficiency of strong scattering.Because the material of grating is metal, so the incidence angle angular range meeting polarization light splitting is larger.
Moreover, the light Ls reflexing to luminescent layer 224 from the second electrode 240 also can absorb by luminescent layer 224, and send the luminous again Re simultaneously with the first polarization direction P and the second polarization direction S again.
On the other hand, light Ls also can penetrate luminescent layer 224 and be incident to the first type doping semiconductor layer 222 or substrate 210.Scattered light Rs ' can be produced when light Ls runs into the first type doping semiconductor layer 222 or substrate 210, and the polarization direction of scattered light Rs ' is no longer same as light Ls originally, but there is the first polarization direction P and the second polarization direction S simultaneously, light Rs ' is upward through luminescent layer 224 and is incident to grating, the some light now in light Rs ' with the first polarization direction P then can penetrate grating, promotes the light emission rate of polarized light.In addition, surface coarsening structure (not illustrating) can be designed with to strengthen dispersion effect on the first type doping semiconductor layer 222 or substrate 210.
In the present embodiment, because the second electrode 240 is grating, therefore can set its grating space T and adjust the exponent number of diffraction bright dipping, to make bright dipping concentrate on demand be the forward bright dipping on 0 rank or control in the scope of required rising angle.Such as: when semiconductor layer 220 material is InGaN (InGaN), be then applicable to sending the ruddiness that wavelength is 625 ~ 630 nanometers (nanometer, nm), now grating space T need be less than 390 nanometers; When semiconductor layer 220 material is InGaN (InGaN), be then applicable to sending the green glow that wavelength is 530 ~ 535 nanometers, now grating space T need be less than 290 nanometers; When semiconductor layer 220 material is gallium nitride (GaN), be then applicable to sending the blue light that wavelength is 450 ~ 470 nanometers, now grating space T need be less than 255 nanometers.In this way, namely adjustable passes through the light of the second electrode 240 based on 0 rank diffraction light.
Fig. 3 A is the schematic diagram of the backlight module of embodiments of the invention, and Fig. 3 B is the partial top view of the backlight module of Fig. 3 A.Please also refer to Fig. 3 A and Fig. 3 B, backlight module 300 comprises optical sheet 310 and multiple light-emitting diode 200 as shown in Figure 2 A.Optionally, the backlight module 300 of the present embodiment also comprises framework 320.Optical sheet 310 has incidence surface 312 and exiting surface 314, and it is other that these light-emitting diodes 200 are then configured in incidence surface 312.
In the present embodiment, backlight module 300 is direct type backlight module, and light-emitting diode 200 Configuration Framework 320 is positioned at the below of optical sheet 310.Optical sheet 310 is diffuser plate, and its incidence surface 312 is relative with exiting surface 314, the forward light source provided in order to homogenizing light-emitting diode 200.
Fig. 3 C is the profile of the backlight module of another embodiment of the present invention.Please refer to Fig. 3 C, the backlight module 300 ' of the present embodiment is side incident backlight module, comprises optical sheet 310 ', multiple light-emitting diode 200 as shown in Figure 2 A.Optionally, the backlight module 300 of the present embodiment also comprises framework 320.Optical sheet 310 ' is light guide plate, has incidence surface 312 ' and exiting surface 314 ', and incidence surface 312 ' is adjacent with exiting surface 314 ', and it is other that light-emitting diode 200 is then configured in incidence surface 312 ', to provide the light source of side incident.
Refer again to Fig. 3 B, light-emitting diode 200 also comprises encapsulation sign 260, the vertical direction of the polarization direction of the light provided in order to the polarization direction or display light-emitting diode 200 that show the light that light-emitting diode 200 provides, the polarization direction being adjusted the light that all light-emitting diodes 200 make it provide in order to subsequent technique can be consistent.When light-emitting diode 200 as display backlight use time, display can omit lower polarizer only with upper polarizer, and make this encapsulation sign 260 consistent or vertical with the penetrating shaft direction of the upper polarizer of display, the polarization luminous energy that meaning and all light-emitting diodes 200 send is consistent with the direction of the penetrating shaft of upper polarizer or vertical, promotes light source service efficiency.Certain display also can not omit lower polarizer, and the polarization luminous energy that all light-emitting diodes 200 send is consistent with the direction of the penetrating shaft of upper polarizer or vertical, to promote the contrast of display.In the present embodiment, backlight module 300 can provide the light source of single polarization direction because adopting light-emitting diode 200.In addition, by adjusting the dimensions of light-emitting diode 200, the light direction that also can control the light direction of light-emitting diode 200 and light source that backlight module 300 is provided is more concentrated, to improve light extraction efficiency.
Fig. 4 is the schematic diagram of the liquid crystal indicator of embodiments of the invention.Please refer to Fig. 4, liquid crystal indicator 400 comprises backlight module 300 ' and display panels 410.In the present embodiment, the backlight module 300 ' that liquid crystal indicator 400 is applied is side incident backlight module, and display panels 410 is configured on the exiting surface 314 ' of backlight module 300 '.
In the present embodiment, liquid crystal indicator 400 also comprises the first polarizer 420 and housing 440, wherein the first polarizer 420 to be configured on display panels 410 and away from backlight module 300 ', and by housing 440, backlight module 300 ', display panels 410 and the first polarizer 420 is fixed assembling.When backlight module 300 ' is applied to liquid crystal indicator 400, make liquid crystal indicator 400 can have good display effect due to the raising of backlight module 300 ' light extraction efficiency.
In the present embodiment, liquid crystal indicator 400 also comprises the second polarizer 430, is configured between display panels 410 and backlight module 300 ', in order to guarantee that the light being passed to display panels 410 has single polarization direction.
In sum, it is optical grating construction that light-emitting diode of the present invention utilizes electrode design, except scattering effect by motor current, also produces the light source with single polarization direction by the effect of grating.In addition, also can coordinate the light of different wave length and adjust grating space, concentrate light direction to control the exponent number of diffraction bright dipping or suitably limit rising angle.
In addition, the light that the electrode being designed to raster mode reflects all can be destroyed the polarization direction of its script when running into luminescent layer or substrate, and regenerate the scattered light with two kinds of polarization directions, the light penetration with wherein a kind of polarization direction thus can be allowed to be designed to the electrode of raster mode and to be utilized.In addition, luminescent layer to absorb by electrode after the light that reflects, also can regenerate the light with two kinds of polarization directions.By above-mentioned mechanism, the light produced by being allowed light-emitting diode is thoroughly utilized.
Therefore, no matter be that application light-emitting diode of the present invention is in backlight module, or assemble this backlight module in liquid crystal indicator, all can because of above-mentioned effect of light-emitting diode the utilization rate of the light that the backlight module that is improved provides, and then promote the display quality of liquid crystal indicator.
Although the present invention discloses as above with preferred embodiment; so itself and be not used to limit the present invention; those of ordinary skill in any art; without departing from the spirit and scope of the present invention; when doing a little change and retouching, therefore protection scope of the present invention is as the criterion when defining depending on appended claim.
Claims (30)
1. a light-emitting diode, comprising:
Semiconductor layer, comprises the first type doping semiconductor layer, luminescent layer and Second-Type doping semiconductor layer, and wherein this luminescent layer is between this first type doping semiconductor layer and this Second-Type doping semiconductor layer;
First electrode, is electrically connected at this first type doping semiconductor layer;
Second electrode, be electrically connected at this Second-Type doping semiconductor layer, and this second electrode is grating, be suitable for allowing the light with the first polarization direction pass through, and be suitable for reflecting the light with the second polarization direction, wherein this first polarization direction is perpendicular to this second polarization direction, and this luminescent layer has surface coarsening structure; And
Encapsulation indicates, in order to show this first polarization direction or this second polarization direction.
2. light-emitting diode as claimed in claim 1, also comprise substrate, wherein this first type doping semiconductor layer is positioned on this substrate, this luminescent layer is positioned on the subregion of this first type doping semiconductor layer, this Second-Type doping semiconductor layer is positioned on this luminescent layer, this first electrode is positioned at this first type doping semiconductor layer and does not configure on the region of this luminescent layer, and this second electrode is positioned on this Second-Type doping semiconductor layer.
3. light-emitting diode as claimed in claim 2, wherein the material of this substrate comprises sapphire.
4. light-emitting diode as claimed in claim 2, wherein this substrate has surface coarsening structure.
5. light-emitting diode as claimed in claim 1, wherein the material of this semiconductor layer comprises InGaN, is suitable for sending the ruddiness that wavelength is 625 ~ 630 nanometers, and now the grating space of this second electrode is less than 390 nanometers.
6. light-emitting diode as claimed in claim 1, wherein the material of this semiconductor layer comprises InGaN, is suitable for sending the green glow that wavelength is 530 ~ 535 nanometers, and now the grating space of this second electrode is less than 290 nanometers.
7. light-emitting diode as claimed in claim 1, wherein the material of this semiconductor layer comprises gallium nitride, is suitable for sending the blue light that wavelength is 450 ~ 470 nanometers, and now the grating space of this second electrode is less than 255 nanometers.
8. light-emitting diode as claimed in claim 1, wherein the material of this first electrode and this second electrode comprises metal.
9. a backlight module, comprising:
Optical sheet, has incidence surface and exiting surface; And
Multiple light-emitting diode, is configured in by this incidence surface, and respectively this light-emitting diode comprises:
Semiconductor layer, comprises the first type doping semiconductor layer, luminescent layer and Second-Type doping semiconductor layer, and wherein this luminescent layer is between this first type doping semiconductor layer and this Second-Type doping semiconductor layer;
First electrode, is electrically connected at this first type doping semiconductor layer;
Second electrode, be electrically connected at this Second-Type doping semiconductor layer, and this second electrode is grating, be suitable for allowing the light with the first polarization direction pass through, and be suitable for reflecting the light with the second polarization direction, wherein this first polarization direction is perpendicular to this second polarization direction, and this luminescent layer has surface coarsening structure; And
Encapsulation indicates, in order to show this first polarization direction or this second polarization direction.
10. backlight module as claimed in claim 9, wherein this optical sheet is light guide plate, and this incidence surface is adjacent to this exiting surface.
11. backlight modules as claimed in claim 9, wherein this optical sheet is diffuser plate, and this incidence surface is relative with this exiting surface.
12. backlight modules as claimed in claim 9, wherein respectively this light-emitting diode also comprises substrate, respectively this first type doping semiconductor layer is positioned at respectively on this substrate, respectively this luminescent layer is positioned on the subregion of respectively this first type doping semiconductor layer, respectively this Second-Type doping semiconductor layer is positioned at respectively on this luminescent layer, respectively this first electrode is positioned at respectively this first type doping semiconductor layer and does not configure on the region of respectively this luminescent layer, and respectively this second electrode is positioned at respectively on this Second-Type doping semiconductor layer.
13. backlight modules as claimed in claim 12, wherein the material of the plurality of substrate comprises sapphire.
14. backlight modules as claimed in claim 12, wherein respectively this substrate has surface coarsening structure.
15. backlight modules as claimed in claim 9, wherein respectively the material of this semiconductor layer comprises InGaN, is suitable for sending the ruddiness that wavelength is 625 ~ 630 nanometers, and now the grating space of this second electrode is less than 390 nanometers.
16. backlight modules as claimed in claim 9, wherein respectively the material of this semiconductor layer comprises InGaN, is suitable for sending the green glow that wavelength is 530 ~ 535 nanometers, and now the grating space of this second electrode is less than 290 nanometers.
17. backlight modules as claimed in claim 9, wherein respectively the material of this semiconductor layer comprises gallium nitride, is suitable for sending the blue light that wavelength is 450 ~ 470 nanometers, and now the grating space of this second electrode is less than 255 nanometers.
18. backlight modules as claimed in claim 9, wherein the material of the plurality of first electrode and the plurality of second electrode comprises metal.
19. 1 kinds of liquid crystal indicators, comprising:
Backlight module, comprising:
Optical sheet, has incidence surface and exiting surface; And
Multiple light-emitting diode, is configured in by this incidence surface, and respectively this light-emitting diode comprises:
Semiconductor layer, comprises the first type doping semiconductor layer, luminescent layer and Second-Type doping semiconductor layer, and wherein this luminescent layer is between this first type doping semiconductor layer and this Second-Type doping semiconductor layer;
First electrode, is electrically connected at this first type doping semiconductor layer;
Second electrode, be electrically connected at this Second-Type doping semiconductor layer, and this second electrode is grating, be suitable for allowing the light with the first polarization direction pass through, and be suitable for reflecting the light with the second polarization direction, wherein this first polarization direction is perpendicular to this second polarization direction, and this luminescent layer has surface coarsening structure; And
Encapsulation indicates, in order to show this first polarization direction or this second polarization direction; And display panels, be configured on this exiting surface.
20. liquid crystal indicators as claimed in claim 19, wherein this optical sheet is light guide plate, and this incidence surface is adjacent to this exiting surface.
21. liquid crystal indicators as claimed in claim 19, wherein this optical sheet is diffuser plate, and this incidence surface is relative with this exiting surface.
22. liquid crystal indicators as claimed in claim 19, wherein respectively this light-emitting diode also comprises substrate, respectively this first type doping semiconductor layer is positioned on this substrate, respectively this luminescent layer is positioned on the subregion of respectively this first type doping semiconductor layer, respectively this Second-Type doping semiconductor layer is positioned at respectively on this luminescent layer, respectively this first electrode is positioned at respectively this first type doping semiconductor layer and does not configure on the region of respectively this luminescent layer, and respectively this second electrode is positioned at respectively on this Second-Type doping semiconductor layer.
23. liquid crystal indicators as claimed in claim 22, wherein the material of the plurality of substrate comprises sapphire.
24. liquid crystal indicators as claimed in claim 22, wherein respectively this substrate has surface coarsening structure.
25. liquid crystal indicators as claimed in claim 19, wherein respectively the material of this semiconductor layer comprises InGaN, is suitable for sending the ruddiness that wavelength is 625 ~ 630 nanometers, and now the grating space of this second electrode is less than 390 nanometers.
26. liquid crystal indicators as claimed in claim 19, wherein respectively the material of this semiconductor layer comprises InGaN, is suitable for sending the green glow that wavelength is 530 ~ 535 nanometers, and now the grating space of this second electrode is less than 290 nanometers.
27. liquid crystal indicators as claimed in claim 19, wherein respectively the material of this semiconductor layer comprises gallium nitride, is suitable for sending the blue light that wavelength is 450 ~ 470 nanometers, and now the grating space of this second electrode is less than 255 nanometers.
28. liquid crystal indicators as claimed in claim 19, wherein the material of the plurality of first electrode and the plurality of second electrode comprises metal.
29. liquid crystal indicators as claimed in claim 19, also comprise the first polarizer, are configured on this display panels, and away from this backlight module.
30. liquid crystal indicators as claimed in claim 29, also comprise the second polarizer, are configured between this display panels and this backlight module.
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| CN103557445A (en) * | 2013-08-26 | 2014-02-05 | 中国科学院苏州纳米技术与纳米仿生研究所 | Side-emission semiconductor light-emitting device, backlight module and area light source |
| CN105609534A (en) | 2016-01-06 | 2016-05-25 | 京东方科技集团股份有限公司 | Organic light-emitting diode (OLED) display substrate and display device |
| CN106842601B (en) * | 2017-03-06 | 2019-12-24 | 京东方科技集团股份有限公司 | Three-dimensional display system and method |
| CN107544180A (en) * | 2017-09-26 | 2018-01-05 | 京东方科技集团股份有限公司 | Light emitting diode, backlight module and liquid crystal display device |
| CN109244200B (en) * | 2018-09-27 | 2024-03-29 | 武汉华星光电技术有限公司 | Flip chip, area light source and display device using the same |
| CN112882287A (en) * | 2021-01-15 | 2021-06-01 | 北海惠科光电技术有限公司 | Backlight module and display device |
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| KR101134301B1 (en) * | 2005-02-28 | 2012-04-13 | 엘지디스플레이 주식회사 | Light Emitting Diodes back-light assembly and liquid crystal display device module using thereof |
| KR101263934B1 (en) * | 2006-05-23 | 2013-05-10 | 엘지디스플레이 주식회사 | Light emitting diode and method of manufacturing thesame |
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