CN102255002A - Etching method of single crystal silicon material for solar cell - Google Patents
Etching method of single crystal silicon material for solar cell Download PDFInfo
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- CN102255002A CN102255002A CN2011102267846A CN201110226784A CN102255002A CN 102255002 A CN102255002 A CN 102255002A CN 2011102267846 A CN2011102267846 A CN 2011102267846A CN 201110226784 A CN201110226784 A CN 201110226784A CN 102255002 A CN102255002 A CN 102255002A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides an etching method of a single crystal silicon material for a solar cell. The etching method comprises the steps of: introducing a reaction gas to a vacuum reaction cavity filled with a single crystal silicon material, applying high-frequency electricity to the reaction cavity at a certain pressure, wherein the reaction gas is a mixed gas of oxygen or one or more gases selected from nitric acid gas, chlorine, sulfur hexafluoride and alkali metal hydroxides. According to the single crystal silicon material prepared by adopting the etching method, the photoelectric conversion efficiency of the solar cell can be greatly increased; and according to the method provided by the invention, liquid acid and alkaline are fully eliminated, zero emission is realized, no any pollution is produced to the environment, and a large quantity of manufacture cost is saved.
Description
Technical field
The present invention relates to the processing method of solar cell material, particularly the etching method of the crystal silicon material of its use.
Background technology
Crystal silicon solar batteries etching method in decades, do not break away from monocrystalline silicon with alkaline making herbs into wool face always, polysilicon is with several methods such as acid making herbs into wool faces, but which kind of method all there is following defective with: the one, the pyramid of silicon chip surface is even inadequately, there is certain reflection, causes conversion efficiency to be difficult to further raising; The 2nd, owing to need to use a large amount of alkalescence or acidic chemical, environmental pollution is very serious; The 3rd, the manufacturing cost height; The 4th, production equipment is huge, complementary equipment complexity.
Summary of the invention
The present invention aims to provide that a kind of photoelectric conversion efficiency is higher, the etching method of environmental friendliness, production cost is lower, automation degree of equipment is high solar cell crystal silicon material.
The present invention realizes by following scheme:
The etching method of crystal silicon material, in the vacuum reaction chamber that crystal silicon material (polysilicon is or/and monocrystalline silicon) is housed, feed reacting gas, under certain pressure, add high-frequency electrical in reaction chamber, wherein said reacting gas is oxygen and is selected from one or more mist in the following gas: nitric acid gas, elemental halogen gas, sulphur hexafluoride, alkali metal hydroxide gas.
For quality and the environmental protection of guaranteeing each product are considered, after reaction is finished, feed purge gas in reaction chamber, with the residual gas in the cleaning reaction chamber, purge gas is generally selected one or more the mist in the following gas: air, nitrogen or inert gas.
Generally speaking, the gas pressure in the described reaction chamber is 160Pa～230Pa in the production, and the reacting gas total flow is 1000～2500ml/min, the frequency of described high-frequency electrical be 400KHz～14MHz (.
The etching method of polycrystalline silicon material, in the vacuum reaction chamber that polycrystalline silicon material is housed, feed reacting gas, under certain pressure, add high-frequency electrical in reaction chamber, wherein said reacting gas is oxygen and is selected from one or more mist in the following gas: nitric acid gas, elemental halogen gas, sulphur hexafluoride.
For quality and the environmental protection of guaranteeing each product are considered, after reaction is finished, feed purge gas in reaction chamber, with the residual gas in the cleaning reaction chamber, purge gas is generally selected one or more the mist in the following gas: air, nitrogen or inert gas.
Generally speaking, the gas pressure in the described reaction chamber is 160Pa～230Pa in the production, and the reacting gas total flow is 1000～2500ml/min, and the frequency of described high-frequency electrical is 400KHz～14MHz.
The etching method of single crystal silicon material, in the vacuum reaction chamber that single crystal silicon material is housed, feed reacting gas, under certain pressure, add high-frequency electrical in reaction chamber, wherein said reacting gas is oxygen and is selected from one or more mist in the following gas: nitric acid gas, elemental halogen gas, alkali metal hydroxide gas.
For quality and the environmental protection of guaranteeing each product are considered, after reaction is finished, feed purge gas in reaction chamber, with the residual gas in the cleaning reaction chamber, purge gas is generally selected one or more the mist in the following gas: air, nitrogen or inert gas.
In the production generally speaking, gas pressure in the described reaction chamber is 160Pa～230Pa, the reacting gas total flow is 1000～2500ml/min, is the frequency of described high-frequency electrical that (whether these value ranges feasible for 400KHz～14MHz? promptly promptly be considered as feasible) as long as in this scope, can make the making herbs into wool product
Compare with existing traditional process for etching method, preparation method of the present invention has following advantage:
1. method of the present invention is to pass through high-frequency discharge under certain pressure, the corrosion of the crystalline silicon material under action of alternative electric field in the accelerated reaction chamber, because 100 structures with 110 of silicon materials are different, so corrosion rate differs widely, the result has realized four rib pyramid structures, and pyramid size, uniformity all can realize automatic control, owing to realized that pyramidal automatic control has also just realized the control of light reflectivity, promptly realize increasing substantially the photoelectric conversion efficiency of solar battery sheet, experiment shows can raise the efficiency 1-2 percentage point.Particularly the polysilicon chip lifting is obvious especially, and pyramid structure is near the monocrystal matte, and photoelectric conversion efficiency is also near monocrystalline.
2. in the inventive method, abandoned the liquid soda acid fully, and what adopt is gas in confined space inner control amount, used chemicals only be original 1/1000, but and total overall reaction exhaust, therefore one side realizes zero discharge, and environment is not constituted any pollution; Can almost disregard the soda acid cost on the other hand.
3. with traditional making herbs into wool method, equipment is huge, and complementary equipment is complicated and all have the title of electric-tiger and water tiger, and both account for 6.61% of whole manufacturing cost, and adopts method cost of the present invention to have only traditional about 1/5.
Embodiment
Embodiment 1
Polycrystalline silicon material is positioned in the interior slide glass boat of vacuum reaction chamber, behind the off-response chamber, feed purge gas nitrogen earlier, in reaction chamber, feed the hybrid reaction gas of chlorine, sulphur hexafluoride and oxygen then, control gaseous pressure is 200Pa, total gas flow rate is 1000ml/min, chlorine: sulphur hexafluoride: the flow-rate ratio of oxygen is: 1: 2: 2, and in reaction chamber, add the high-frequency electrical that upper frequency is 450KHz; After reaction is finished, in reaction chamber, feed nitrogen again, the reaction mixture gas body of remainder is cleaned up.
Adopt the polycrystalline silicon material after above-mentioned etching method is handled to have four rib pyramid structures, above-mentioned this polycrystalline silicon material with four rib pyramid structures is used to make solar cell, photoelectric conversion efficiency can reach 18%; The solar cell that the same terms adopts the polysilicon of conventional method to make down, photoelectric conversion efficiency is 16.6%; The former can raise the efficiency 1.4 percentage points than latter's photoelectric conversion efficiency.
Embodiment 2
Single crystal silicon material is positioned in the interior slide glass boat of vacuum reaction chamber, behind the off-response chamber, feed the purge gas helium earlier, in reaction chamber, feed the mist of gas bromine, NaOH, oxygen then, control gaseous pressure is 180Pa, total gas flow rate is 2500ml/min, and each gas flow ratio is: 15: 2: 28, and in reaction chamber, add the high-frequency electrical that upper frequency is 14MH; After reaction is finished, in reaction chamber, feed helium again, the reaction mixture gas body of remainder is cleaned up.
Adopt the single crystal silicon material after above-mentioned etching method is handled to have four rib pyramid structures of uniform size, above-mentioned single crystal silicon material with four rib pyramid structures is used to make solar cell, photoelectric conversion efficiency can reach 19%; The solar cell that the same terms adopts the monocrystalline silicon of conventional method to make down, photoelectric conversion efficiency is 18%; The former can raise the efficiency 1 percentage point than latter's photoelectric conversion efficiency.
Embodiment 3
Polycrystalline silicon material and single crystal silicon material are positioned in the interior slide glass boat of vacuum reaction chamber in the lump, behind the off-response chamber, feed purge gas nitrogen earlier, in reaction chamber, feed nitric acid gas, chlorine, sulphur hexafluoride and oxygen mix reacting gas then, control gaseous pressure is 230Pa, total gas flow rate is 1800ml/min, and adds the high-frequency electrical that upper frequency is 12.5MHz in reaction chamber; After reaction was finished, bubbling air in reaction chamber again cleaned up the reaction mixture gas body of remainder.
Above-mentioned polycrystalline silicon material and monocrystalline silicon with four rib pyramid structures is respectively applied for the making solar cell, and its photoelectric conversion efficiency can reach 18% and 19% respectively; The same terms adopts the polysilicon of conventional method and the solar cell that monocrystalline silicon is made down, and photoelectric conversion efficiency is respectively 16.6% and 18%; The former can raise the efficiency 1.4 and 1 percentage point respectively than latter's photoelectric conversion efficiency.
Claims (10)
1. etching method that is used for the crystal silicon material of solar cell, it is characterized in that: in the vacuum reaction chamber that the crystal silicon material is housed, feed reacting gas, under certain pressure, add high-frequency electrical in reaction chamber, wherein said reacting gas is oxygen and is selected from one or more mist in the following gas: nitric acid gas, elemental halogen gas, sulphur hexafluoride, alkali metal hydroxide gas.
2. the etching method that is used for the crystal silicon material of solar cell as claimed in claim 1 is characterized in that: after reaction is finished, feed purge gas in reaction chamber.
3. the etching method that is used for the solar cell polysilicon material as claimed in claim 2 is characterized in that: described purge gas is selected from one or more in the following gas: air, nitrogen or inert gas.
4. as the described etching method that is used for the crystal silicon material of solar cell of one of claim 1～3, it is characterized in that: the gas pressure in the described reaction chamber is 160Pa～230Pa, the reacting gas total flow is 1000～2500ml/min, and the frequency of described high-frequency electrical is 400KHz～14MHz.
5. etching method that is used for the polycrystalline silicon material of solar cell, it is characterized in that: in the vacuum reaction chamber that polycrystalline silicon material is housed, feed reacting gas, under certain pressure, add high-frequency electrical in reaction chamber, wherein said reacting gas is oxygen and is selected from one or more mist in the following gas: nitric acid gas, elemental halogen gas, sulphur hexafluoride.
6. the etching method that is used for the crystal silicon material of solar cell as claimed in claim 5 is characterized in that: after reaction is finished, and one or more in reaction chamber in the following gas of feeding: air, nitrogen or inert gas.
7. as claim 5 or the 6 described etching methods that are used for the polycrystalline silicon material of solar cell, it is characterized in that: the gas pressure in the described reaction chamber is 160Pa～230Pa, the reacting gas total flow is 1000～2500ml/min, and the frequency of described high-frequency electrical is 400KHz～14MHz.
8. etching method that is used for the single crystal silicon material of solar cell, it is characterized in that: in the vacuum reaction chamber that single crystal silicon material is housed, feed reacting gas, under certain pressure, add high-frequency electrical in reaction chamber, wherein said reacting gas is oxygen and is selected from one or more mist in the following gas: nitric acid gas, elemental halogen gas, alkali metal hydroxide gas.
9. the etching method that is used for the single crystal silicon material of solar cell as claimed in claim 8 is characterized in that: after reaction is finished, and one or more in reaction chamber in the following gas of feeding: air, nitrogen or inert gas.
10. the etching method that is used for the polycrystalline silicon material of solar cell as claimed in claim 8 or 9, it is characterized in that: the gas pressure in the described reaction chamber is 160Pa～230Pa, the reacting gas total flow is 1000～2500ml/min, and the frequency of described high-frequency electrical is 400KHz～14MHz.
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| CN2011102267846A CN102255002A (en) | 2011-08-09 | 2011-08-09 | Etching method of single crystal silicon material for solar cell |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104051578A (en) * | 2014-07-02 | 2014-09-17 | 周浪 | Gas phase etching texturing method for polycrystalline silicon chip for solar battery |
| CN107251235A (en) * | 2014-12-22 | 2017-10-13 | 索尔维公司 | Method for producing solar cell |
| CN109306509A (en) * | 2018-11-27 | 2019-02-05 | 江苏拓正茂源新能源有限公司 | A kind of solar battery mono-crystal silicon materials preparation process |
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| CN101308219A (en) * | 2008-06-27 | 2008-11-19 | 吉林大学 | Method for constructing anti-reflection microstructure using single layer nanometer particle as etching blocking layer |
| US20090199898A1 (en) * | 2008-02-13 | 2009-08-13 | Younggu Do | Solar cell and method of texturing solar cell |
| CN101800264A (en) * | 2010-02-20 | 2010-08-11 | 山东力诺太阳能电力股份有限公司 | Process for texturing crystalline silicon solar cell by dry etching |
| CN101864599A (en) * | 2010-05-31 | 2010-10-20 | 江西赛维Ldk太阳能高科技有限公司 | Preparation method of suede of silicon wafer |
| CN201904966U (en) * | 2010-12-01 | 2011-07-20 | 中微半导体设备(上海)有限公司 | Plasma treatment device |
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2011
- 2011-08-09 CN CN2011102267846A patent/CN102255002A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090199898A1 (en) * | 2008-02-13 | 2009-08-13 | Younggu Do | Solar cell and method of texturing solar cell |
| CN101308219A (en) * | 2008-06-27 | 2008-11-19 | 吉林大学 | Method for constructing anti-reflection microstructure using single layer nanometer particle as etching blocking layer |
| CN101800264A (en) * | 2010-02-20 | 2010-08-11 | 山东力诺太阳能电力股份有限公司 | Process for texturing crystalline silicon solar cell by dry etching |
| CN101864599A (en) * | 2010-05-31 | 2010-10-20 | 江西赛维Ldk太阳能高科技有限公司 | Preparation method of suede of silicon wafer |
| CN201904966U (en) * | 2010-12-01 | 2011-07-20 | 中微半导体设备(上海)有限公司 | Plasma treatment device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104051578A (en) * | 2014-07-02 | 2014-09-17 | 周浪 | Gas phase etching texturing method for polycrystalline silicon chip for solar battery |
| CN104051578B (en) * | 2014-07-02 | 2016-08-24 | 周浪 | A kind of gas phase etching etching method of solar cell polysilicon chip |
| CN107251235A (en) * | 2014-12-22 | 2017-10-13 | 索尔维公司 | Method for producing solar cell |
| CN109306509A (en) * | 2018-11-27 | 2019-02-05 | 江苏拓正茂源新能源有限公司 | A kind of solar battery mono-crystal silicon materials preparation process |
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Application publication date: 20111123 |