CN102254840A - Semiconductor device and manufacture method thereof - Google Patents
Semiconductor device and manufacture method thereof Download PDFInfo
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- CN102254840A CN102254840A CN2010101829998A CN201010182999A CN102254840A CN 102254840 A CN102254840 A CN 102254840A CN 2010101829998 A CN2010101829998 A CN 2010101829998A CN 201010182999 A CN201010182999 A CN 201010182999A CN 102254840 A CN102254840 A CN 102254840A
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- conductive layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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Abstract
The invention discloses a semiconductor device and a manufacture method thereof. The method comprises the following steps of: firstly providing a semiconductor substrate having an active surface and a back surface which are opposite to each other, wherein the semiconductor substrate comprises at least one grounding pad which is configured on the active surface; then, forming at least one silicon through hole in the semiconductor substrate, wherein the silicon through hole passes through the active surface from the back surface so as to be exposed out of the grounding pad; and then, forming a conductive layer on the back surface of the semiconductor substrate, wherein the conductive layer is filled in the silicon through hole and electrically connected with the semiconductor substrate and the grounding pad simultaneously. Compared with the conventional wire-leading technology, the transmission density of a grounding signal in unit area can be increased; furthermore, no insulated material is arranged between the conductive layer and the semiconductor substrate; therefore, the grounding pad on the semiconductor substrate can be used for uniformly transmitting the grounding signal to an external grounded element through the conductive layer; and the operational effectiveness of the semiconductor structure disclosed by the invention is improved.
Description
Technical field
The present invention relates to a kind of semiconductor structure and manufacture method thereof, and particularly relate to a kind of electrical ground connection homogeneous semiconductor structure and manufacture method thereof.
Background technology
In traditional semiconductor packaging, be to utilize lead-in wire (wire bonding) technology that bonding wire is electrically connected between the ground mat and external ground element on the chip.And in high frequency and high-power chip, each ground mat all needs to be connected with many bonding wires, to deal with high-power current delivery.
Yet, because the open ended bonding wire limited amount of each ground mat is in the area of ground mat, therefore in semiconductor element small day by day today, the layout difficulty of bonding wire also with rising.In addition, inconsistent as if the distance between each ground mat on the chip and the external ground element, then employed wire length is also inequality.If the length of bonding wire is long, will makes the anxiety that decline is electrically arranged, and thereby produce electrical unmatched phenomenon.
Be with, the ground signalling transmission range that how to shorten chip is to improve efficiency of transmission, the real problem of desiring most ardently solution at present that become.
Summary of the invention
In view of this, purpose of the present invention is exactly that a kind of manufacture method of semiconductor structure is being provided, to improve the transmission quality of ground signalling.
A further object of the present invention provides a kind of semiconductor structure, and it has uniform ground connection property, and thereby has a good operational effectiveness.
The present invention proposes a kind of manufacture method of semiconductor structure, and it is that the semiconductor-based end with active surface respect to one another and back side is provided earlier, and this semiconductor-based end comprise at least one ground mat, be disposed on its active surface.Then, form at least one silicon through hole in the semiconductor-based end, this silicon through hole is through to active surface from the back side, and exposes ground mat.Then, form conductive layer at the back side at the semiconductor-based end, this conductive layer insert in the silicon through hole and simultaneously and the semiconductor-based end and ground mat electrically connect.
In an embodiment of the present invention, before forming above-mentioned silicon through hole, comprise that also active surface adhering with the semiconductor-based end is on loading plate.And, after forming conductive layer, the semiconductor-based end, can be separated with loading plate.
In an embodiment of the present invention, the above-mentioned semiconductor-based end, also comprise at least one power supply/signal pad, and it is disposed on the active surface.And, again with the semiconductor-based end and loading plate after separating, also be included in the enterprising line lead technology in active surface at the semiconductor-based end, so that power supply/signal pad and external circuit electrically connect.
The present invention also proposes a kind of semiconductor structure, comprises the semiconductor-based end and conductive layer.Wherein, the semiconductor-based end, have the active surface respect to one another and the back side, and comprise at least one ground mat, is disposed on the active surface.And, have at least one silicon through hole at semiconductor-based the end, be through to active surface from the back side and expose ground mat.Conductive layer then is to be disposed at the back side at the semiconductor-based end and to insert in the silicon through hole, with simultaneously and ground mat and the semiconductor-based end electrically connect.
In an embodiment of the present invention, the above-mentioned semiconductor-based end, also comprise at least one power supply/signal pad, is disposed on the active surface.
In an embodiment of the present invention, above-mentioned power supply/signal pad ground cushion edge at the contiguous semiconductor-based end that connects.
In an embodiment of the present invention, the material of above-mentioned conductive layer for example is copper or aluminium.
The present invention forms earlier the silicon through hole and exposes ground mat in the semiconductor-based end, conductive layer is formed on semiconductor-based bottom back side again, and inserts in the silicon through hole and electrically connect with ground mat.That is to say that the present invention utilizes the TSV technology to make the transmission path of ground signalling, with known lead technology in comparison, the present invention can increase the transmission density of the ground signalling of unit are.
For above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Figure 1A to Fig. 1 E is the generalized section of semiconductor structure in technology in the embodiments of the invention.
Fig. 2 is the generalized section of semiconductor structure in part technology in the another embodiment of the present invention.
Fig. 3 is the generalized section of semiconductor structure in part technology in the another embodiment of the present invention.
Description of reference numerals
100: semiconductor structure
110: the semiconductor-based end
112: active surface
114: the back side
115: material layer
116: ground mat
118: power supply/signal pad
120: the silicon through hole
130: loading plate
135: adhesion coating
140: conductive layer
Embodiment
Figure 1A to Fig. 1 E is the generalized section of semiconductor structure in technology in the embodiments of the invention.Please refer to Figure 1A, the semiconductor-based end 110 at first be provided, its have respect to one another active surperficial 112 with the back side 114.With present embodiment, the semiconductor-based end 110 for example is a wafer, but the present invention is as limit, in other embodiments, the semiconductor-based end 110 also can be cut crystal and chip.And the semiconductor-based end 110, comprise at least one ground mat 116, is disposed on active surperficial 112.Specifically, the semiconductor-based end 110 active surperficial 112 on be formed with multilayer material layer 115, and all can dispose ground mat 116 in the layers of material layer.For convenience of description, Figure 1A only shows monolayer material layer 115 and is positioned at wherein a plurality of ground mats 116.In addition, the semiconductor-based end 110 of present embodiment, also comprise at least one power supply/signal pad 118, and itself and ground mat 116 equally all are disposed on active surperficial 112.
What deserves to be mentioned is, because present embodiment is to utilize bonding wire (figure does not show) that these power supply/signal pads 118 are electrically connected to external circuit in subsequent technique, therefore present embodiment is that power supply/signal pad 118 is arranged at the edge part that connects ground cushion 116 and be close to the semiconductor-based end 110, so that the carrying out of follow-up lead-in wire technology.
Please refer to Figure 1B, damage because of rigidity is not enough when using board equipment to carry out subsequent technique for avoiding the semiconductor-based end 110, present embodiment is earlier the semiconductor-based end 110 to be adhered on the loading plate 130.For instance, the semiconductor-based end 110 for example is to adhere on the loading plate 130 by adhesion coating 135, and the semiconductor-based end 110 is active surperficial 112 to contact with adhesion coating 135 with it.Wherein, adhesion coating 135 for example is the mucilage materials with temporary adhesion strength, for example ultraviolet glue, PUR or can solvent with the solvable dispergation of its dissolving, but not as limit.130 of loading plates can be transparent plastic substrates.
It should be noted that, though present embodiment is that adhesion coating 135 is covered with in loading plate 130 and at the semiconductor-based end 110, but in other embodiments, as shown in Figure 2, adhesion coating 135 is distributed in loading plate 130 and with also can being patterning at the semiconductor-based end 110, and not with the semiconductor-based end 110 active surperficial 112 on element (figure do not show) contact, to avoid when removing adhesion coating 135, damaging these elements.
Please refer to Fig. 1 C, and at least one silicon through hole of formation in the semiconductor-based end 110 (through siliconvia, TSV) 120, be configured in active surperficial 112 ground mat 116 to expose.Specifically, the quantity of silicon through hole 120 is to conform to the quantity of ground mat 116, so that all ground mats 116 on active surperficial 112 are come out.Present embodiment is for example from the back side 114 at the semiconductor-based end 110, and (deep reactive ion etching, mode DRIE) forms and is through to active surperficial 112 silicon through hole 120, the present invention but not as limit to use laser beam perforation or dark reactive ion etch.
Please refer to Fig. 1 D, on the back side 114 at the semiconductor-based end 110, form conductive layer 140, and conductive layer 140 is inserted in the silicon through hole 120 and electrically connected with ground mat 116.In subsequent technique, ground mat 116 promptly electrically connects with external ground element (figure does not show) by conductive layer 140.It should be noted that conductive layer 140 directly inserts in the silicon through hole 120, do not dispose any insulating material at itself and the semiconductor-based end 110.In other words, the semiconductor-based end 110 active surperficial 112 on all ground mats 116 can be electrically connected to each other by the conductive layer 140 and the semiconductor-based end 110, and then have uniform ground connection property, and thereby be applicable to high frequency or high-power semiconductor device.
In the present embodiment, the material of conductive layer 140 can comprise copper or aluminium, but not as limit.And though the conductive layer 140 of present embodiment is conformally to insert in the silicon through hole 120, in other embodiments, as shown in Figure 3, formed conductive layer 140 also can be that silicon through hole 120 is filled up.The present invention does not do any qualification at this.
Please refer to Fig. 1 D and Fig. 1 E, present embodiment then promptly is that the semiconductor-based end 110 is separated with bearing substrate 130 after forming conductive layer 140.Specifically, the method that the semiconductor-based end 110 is separated with bearing substrate 130 comprises ultraviolet illumination, hot melt, dissolution with solvents or peels off with mechanical force that its material by adhesion coating 135 is decided.Roughly finish the technology of semiconductor structure 100 this moment, and follow-up can also then the cutting semiconductor structure 100 and technology such as encapsulation, persons skilled in the art should be understood its details, repeat no more herein.
What deserves to be mentioned is, if the initial semiconductor-based end that provides 110, be chip, then can be with the semiconductor-based end 110 and bearing substrate 130 after separatings, in the enterprising line lead technology in the active surface at the semiconductor-based end 110, power supply/signal pad 118 is electrically connected to external circuit (figure does not show).
In sum, the present invention forms earlier the silicon through hole and exposes ground mat in the semiconductor-based end, conductive layer is formed on semiconductor-based bottom back side again, and inserts in the silicon through hole and electrically connect with ground mat.That is to say that the present invention utilizes the TSV technology to make the transmission path of ground signalling, with known lead technology in comparison, the present invention can increase the transmission density of the ground signalling of unit are.
In addition, conductive layer and there is no at semiconductor-based the end any insulating material is set, so the suprabasil ground mat of semiconductor can transmit ground signalling to the external ground element equably by conductive layer, and then promote semiconductor structure operational effectiveness of the present invention.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; any persons skilled in the art; without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention defines and is as the criterion when looking appended claim.
Claims (8)
1. the manufacture method of a semiconductor structure comprises:
The semiconductor-based end is provided, and this semiconductor-based end, have the active surface and the back side, and wherein this active surface is relative with this back side, and this semiconductor-based end comprise at least one ground mat, this ground mat is disposed on this active surface;
Form at least one silicon through hole in this semiconductor-based end from this back side, to expose this ground mat; And
This back side in this semiconductor-based end forms conductive layer, wherein this conductive layer insert in this silicon through hole and simultaneously and this semiconductor-based end and this ground mat electrically connect.
2. the manufacture method of semiconductor structure as claimed in claim 1 wherein before forming this silicon through hole, comprises that also this active surface adhering with this semiconductor-based end is on loading plate.
3. the manufacture method of semiconductor structure as claimed in claim 2 wherein after forming this conductive layer, also comprises this semiconductor-based end is separated with this loading plate.
4. the manufacture method of semiconductor structure as claimed in claim 3, wherein this semiconductor-based end, also comprise at least one power supply/signal pad, be disposed on this active surface, and should the semiconductor-based end with after this loading plate separates, also comprise this power supply/signal pad technology that goes between.
5. semiconductor structure comprises:
The semiconductor-based end, have active surface, the back side and at least one silicon through hole, wherein this active surface is relative with this back side, and this semiconductor-based end comprises at least one ground mat, be disposed on this active surface, this silicon through hole is through to this active surface from this back side and exposes this ground mat; And
Conductive layer is disposed at this back side at this semiconductor-based end and inserts in this silicon through hole, with simultaneously and this ground mat and should the electric connection of semiconductor-based end.
6. semiconductor structure as claimed in claim 5, wherein this semiconductor-based end, also comprise at least one power supply/signal pad, is disposed on this active surface.
7. semiconductor structure as claimed in claim 6, the wherein edge at contiguous this semiconductor-based end of relative this ground mat of this power supply/signal pad.
8. semiconductor structure as claimed in claim 5, wherein the material of this conductive layer comprises copper or aluminium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101829998A CN102254840A (en) | 2010-05-18 | 2010-05-18 | Semiconductor device and manufacture method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101829998A CN102254840A (en) | 2010-05-18 | 2010-05-18 | Semiconductor device and manufacture method thereof |
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| CN102254840A true CN102254840A (en) | 2011-11-23 |
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| CN2010101829998A Pending CN102254840A (en) | 2010-05-18 | 2010-05-18 | Semiconductor device and manufacture method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111640734A (en) * | 2020-06-04 | 2020-09-08 | 厦门通富微电子有限公司 | Chip package |
| CN111640721A (en) * | 2020-06-04 | 2020-09-08 | 厦门通富微电子有限公司 | Preparation method of chip packaging body |
Citations (9)
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| JPH02119401A (en) * | 1988-10-28 | 1990-05-07 | Mitsubishi Electric Corp | Microwave integrated circuit |
| JPH0864234A (en) * | 1994-08-23 | 1996-03-08 | Canon Inc | Secondary battery and its manufacture |
| US20040016940A1 (en) * | 2002-07-24 | 2004-01-29 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
| KR20040075179A (en) * | 2003-02-20 | 2004-08-27 | 엘지전자 주식회사 | Method for Manufacturing Chemical Compound Semiconductor Device |
| CN1992151A (en) * | 2005-12-28 | 2007-07-04 | 三洋电机株式会社 | Method of manufacturing semiconductor device |
| CN101207101A (en) * | 2006-12-19 | 2008-06-25 | 育霈科技股份有限公司 | Pattern shielding structure for dry etching and method thereof |
| CN101563773A (en) * | 2006-12-20 | 2009-10-21 | 英特尔公司 | Method for incorporating existing silicon die into 3D integrated stack |
| US20090278244A1 (en) * | 2008-05-12 | 2009-11-12 | Texas Instruments Inc | Ic device having low resistance tsv comprising ground connection |
| TW201011875A (en) * | 2008-09-09 | 2010-03-16 | Lsi Corp | Package with power and ground through via |
-
2010
- 2010-05-18 CN CN2010101829998A patent/CN102254840A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02119401A (en) * | 1988-10-28 | 1990-05-07 | Mitsubishi Electric Corp | Microwave integrated circuit |
| JPH0864234A (en) * | 1994-08-23 | 1996-03-08 | Canon Inc | Secondary battery and its manufacture |
| US20040016940A1 (en) * | 2002-07-24 | 2004-01-29 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
| KR20040075179A (en) * | 2003-02-20 | 2004-08-27 | 엘지전자 주식회사 | Method for Manufacturing Chemical Compound Semiconductor Device |
| CN1992151A (en) * | 2005-12-28 | 2007-07-04 | 三洋电机株式会社 | Method of manufacturing semiconductor device |
| CN101207101A (en) * | 2006-12-19 | 2008-06-25 | 育霈科技股份有限公司 | Pattern shielding structure for dry etching and method thereof |
| CN101563773A (en) * | 2006-12-20 | 2009-10-21 | 英特尔公司 | Method for incorporating existing silicon die into 3D integrated stack |
| US20090278244A1 (en) * | 2008-05-12 | 2009-11-12 | Texas Instruments Inc | Ic device having low resistance tsv comprising ground connection |
| TW201011875A (en) * | 2008-09-09 | 2010-03-16 | Lsi Corp | Package with power and ground through via |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111640734A (en) * | 2020-06-04 | 2020-09-08 | 厦门通富微电子有限公司 | Chip package |
| CN111640721A (en) * | 2020-06-04 | 2020-09-08 | 厦门通富微电子有限公司 | Preparation method of chip packaging body |
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Owner name: VIDOLED GROUP CO., LTD. Free format text: FORMER OWNER: HONGBAO TECHNOLOGY CO., LTD. Effective date: 20120703 |
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Application publication date: 20111123 |