CN102254657B - MMC-based negative temperature coefficient power-type NTCR novel thermistor element - Google Patents
MMC-based negative temperature coefficient power-type NTCR novel thermistor element Download PDFInfo
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- CN102254657B CN102254657B CN201110069320A CN201110069320A CN102254657B CN 102254657 B CN102254657 B CN 102254657B CN 201110069320 A CN201110069320 A CN 201110069320A CN 201110069320 A CN201110069320 A CN 201110069320A CN 102254657 B CN102254657 B CN 102254657B
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Abstract
An MMC-based negative temperature coefficient power-type NTCR novel thermistor element of the invention relates to a novel thermistor element; raw materials comprise magnesium oxide, manganese dioxide and the like; the method for processing the MMC-based negative temperature coefficient power-type NTCR novel thermistor element comprises the following five processes: presintered material processing and pulverization, water addition and ball milling, drying and blank making, sintering and silver paste brushing, and lead welding; the product has a scientific formula, standard processing technology, and stable efficacy; expensive nickel and cobalt materials are substituted by manganese, copper, and magnesium; and the production cost is reduced by about 60%.
Description
Affiliated technical field
MMC based negative temperature coefficient power-type NTCR novel thermosensitive resistive element of the present invention belongs to electronic technology field, relates in particular to negative temperature coefficient power type thermal resistance element.
Background technology
Power-type NTC negative tempperature coefficient thermistor is widely used in the electronic product electric power loops such as various Switching Power Supplies, motor, as suppressing surge current.Developed into irreplaceable protection class component owing to its use is simple, with low cost.Through to the NTC effector mechanism with to the research of micro mist engineering and microstructure,, make the NTC thermistor to high performance, little resistanceization, miniaturization development to promote the development and use of new material, new element.Along with the export of electronic products amount increases, the overseas market is increasing to the demand of NTC thermistor element in recent years, and technology competition, market price competition are very fierce.China is as export of electronic products big country; Enterprise development is difficulty very; Its reason is: the raw material of domestic this type NTC element application all are that the oxide with manganese, copper adds that Ni2O3 (nickel sesquioxide) or CoO (cobalt oxide) are stock, add " sintering agent " of trace again.And Ni2O3 and CoO are rare metal oxides, and its price comparison is expensive, and production cost is not following according to height, lacking of market competition ability.
In order to improve the market competitiveness, can improving cost performance of product be important measures, find the new cheap new metal oxide of alternative Ni2O3 and CoO to come the development of new thermistor element just to become a key problem in technology.
Summary of the invention
The objective of the invention is: the material prescription of the power-type NTCR resistance that to develop a kind of manganese, Cu oxide and a kind of new cheap metal oxide be matrix and the production technology that matches; Under the prerequisite that the NTCR thermistor is identical in resistance value, volume is identical that this fills a prescription with technology makes; Its material technology index is not less than the power-type NTCR thermistor element of same model nickeliferous (Ni) cobalt (Co) composition, and will realize the production and processing cost is fallen generation more than 50%.
In order to realize the foregoing invention purpose; Technical scheme of the present invention is: MMC based negative temperature coefficient power-type NTCR novel thermosensitive resistive element is made up of main body thermistor chip and two lead-in wires; Wherein thermistor chip has three layers: the middle level is a MMC base semiconductor porcelain body, and upper and lower skin is the NTC tailored version high temperature silver electrode of thickness 0.2mm.
The raw material of 200 MMC based negative temperature coefficient power-type NTCR novel thermosensitive resistive elements are made up of magnesia 23 gram, manganese oxide 64.8 grams, cupric oxide 12.2 grams and combustion adjuvant silica 0.15 gram, calcium oxide 0.2 gram and auxiliary material silicones 0.2 gram, 8% polyvinyl alcohol.The manufacturing processing of MMC base NTC resistive element is divided into preliminary treatment powder process, adds water for ball milling, oven dry base, sintering brush add silver slurry and welding lead five road technologies: at first get the raw materials ready by the material proportion of prescription requirement; Again in body of heater respectively with magnesia, manganese oxide, cupric oxide, silica, calcium oxide with 300 ℃ of preliminary treatment after 30 minutes; Mixed back one-tenth fine powder raw material after pulverizing 500 mesh sieves again respectively; In raw material: abrading-ball: water adds water with 1: 2: 2 ratio; Mix grinding is 36 hours in ball grinder; Go out to add the polyvinyl alcohol granulation after slip and the oven dry and be pressed into required base footpath sheet, again 12 meters long in acting rotary push pedal continuous tunnel furnace through 200 ℃ of-600 ℃ of-800 ℃ of-850 ℃ of-950 ℃ of-1100 ℃ of-1130 ℃ of temperature with stove cooling carrying out sintering, be that the 350mm/h back of coming out of the stove forms MMC base semiconductor ceramics at fltting speed; At last the ceramics above and below with silk screen printing on silver slurry; Behind sintering, form the silver electrode chip, again two lead-in wires are plugged on the chip, in 290 ℃ of tin pots, get leaded chip then after the immersed solder; Get MMC based negative temperature coefficient power-type NTCR novel thermosensitive resistive element after sealing insulating material silicones and curing.
The invention has the beneficial effects as follows: the semiconductor porcelain body material prescription science in the MMC based negative temperature coefficient power-type NTCR novel thermosensitive resistive element, and, form good NTC performance through adaptive optimum calcinating temperature and fltting speed.The NTC semiconductor is a kind of polycrystal, and crystal grain is half inverse spinel structure, and magnesia substitutes Ni2O3 and CoO makes magnesium ion substitute nickel ion or cobalt ions; Thereby make Mn3+-Mn4+-Mn3+-in the B position,,,,,, conductive ion chain no change, thereby kept the resistivity before substituting, product detects through authoritative department; B >=the 2500K of MMC based power type NTCR resistive element; Shock-resistant electric current >=5A improves greatly and increases through our company's its B value on probation in batches, shock-resistant current capacity, in the product in the MMC sill magnesia cheap; Compare with the like product that contains nickel or cobalt material, cost reduces about 60%.
Specific embodiments
1. the selection of raw material:
The raw material standards of choosing is: manganese oxide >=99.2%, magnesia are the high pure and ultra-fine level, cupric oxide >=99.5%; Calcium oxide >=99.8%; Polyvinyl alcohol is a low alkalinity, and concentration of aqueous solution is 8%, expects that wherein the glue ratio is 13kg: 1500ml; Unleaded NTC silver slurry argentiferous 95%; Unleaded tin bar stanniferous 96%; Silica and calcium oxide are the AR level, wherein silica >=99.6%; The tin-coated steel linear diameter is 0.8mm, and silicones is sealed material 56%.
2.MMC based negative temperature coefficient power-type NTCR novel thermosensitive resistive element manufacturing process
Earlier by formula rate with the magnesia of buying, manganese oxide, cupric oxide and combustion adjuvant silica and calcium oxide respectively 300 ℃ of body of heater preliminary treatment 30 minutes, become fine powder material after pulverizing 500 mesh sieves respectively; Again with material: abrading-ball: water adds deionized water with 1: 2: 2 ratio, is mix grinding 36 hours in 1 meter the ball grinder at diameter, goes out behind the slip with 200 ℃ of oven dry, adds concentration then and be 8% the polyvinyl alcohol aqueous solution, wherein material: liquid=13Kg: 1500ml; Cross 40 eye mesh screen granulations, and branch is pressed into base footpath sheet; Again at TBL type sintering in acting rotary push pedal continuous tunnel furnace of Xi'an Xing Yuan new technology; Fltting speed is 350mm/h, after 200 ℃ of-600 ℃ of-800 ℃ of-850 ℃ of-950 ℃ of-1100 ℃ of-1130 ℃ of temperature are come out of the stove, reduce to room temperature becomes the MMC semiconductor ceramic chip; With silver slurry in the silk screen printing, insulation burning infiltration in 15 minutes obtains the chip of silver electrode in 830 ℃ of temperature with the ceramics top and bottom of burning till; Again two steel wires are plugged on the chip; In 290 ℃ of tin pots, get leaded chip then after the immersed solder; Solidify this element appearance insulating material half an hour with 140 ℃ of insulations of temperature again after sealing the insulating material silicones, obtain MMC based negative temperature coefficient power-type NTC novel thermosensitive element.
Claims (2)
1. negative temperature coefficient power-type NTCR thermistor element is characterized in that: the raw material of 200 negative temperature coefficient power-type NTCR thermistor elements are made up of magnesia 23 grams, manganese oxide 64.8 grams, cupric oxide 12.2 grams and combustion adjuvant silica 0.15 gram, calcium oxide 0.2 gram and auxiliary material silicones 0.2 gram, 8% polyvinyl alcohol.
2. the processing method of negative temperature coefficient power-type NTCR thermistor element according to claim 1; It is characterized in that: at first get the raw materials ready by the material proportion of prescription requirement; Again in body of heater respectively with magnesia, manganese oxide, cupric oxide, silica, calcium oxide with 300 ℃ of preliminary treatment after 30 minutes, be mixed into the fine powder raw material after pulverizing 500 mesh sieves again respectively, in raw material: abrading-ball: water adds water with 1: 2: 2 ratio; Mix grinding is 36 hours in ball grinder; Go out to add the polyvinyl alcohol granulation after slip and the oven dry and be pressed into required base footpath sheet, again 12 meters long in acting rotary push pedal continuous tunnel furnace through 200 ℃ of one 600 ℃ of one 800 ℃ of one 850 ℃ of one 950 ℃ of one 1100 ℃ of one 1130 ℃ of temperature with stove cooling carrying out sintering, be that the 350mm/h back of coming out of the stove forms semiconductor ceramic chip at fltting speed; At last the semiconductor ceramic chip above and below with silk screen printing on silver slurry; Behind sintering, form the silver electrode chip, again two lead-in wires are plugged on the silver electrode chip, in 290 ℃ of tin pots, get leaded silver electrode chip then after the immersed solder; Get negative temperature coefficient power-type NTCR thermistor element after sealing insulating material silicones and curing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110069320A CN102254657B (en) | 2011-03-23 | 2011-03-23 | MMC-based negative temperature coefficient power-type NTCR novel thermistor element |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110069320A CN102254657B (en) | 2011-03-23 | 2011-03-23 | MMC-based negative temperature coefficient power-type NTCR novel thermistor element |
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| Publication Number | Publication Date |
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| CN102254657A CN102254657A (en) | 2011-11-23 |
| CN102254657B true CN102254657B (en) | 2012-10-10 |
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| CN201110069320A Expired - Fee Related CN102254657B (en) | 2011-03-23 | 2011-03-23 | MMC-based negative temperature coefficient power-type NTCR novel thermistor element |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1039497A (en) * | 1988-07-14 | 1990-02-07 | Tdk株式会社 | Semiconductive ceramic composition |
| JP2005244115A (en) * | 2004-02-27 | 2005-09-08 | Tdk Corp | Resistor paste, resistor and electronic part |
-
2011
- 2011-03-23 CN CN201110069320A patent/CN102254657B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1039497A (en) * | 1988-07-14 | 1990-02-07 | Tdk株式会社 | Semiconductive ceramic composition |
| JP2005244115A (en) * | 2004-02-27 | 2005-09-08 | Tdk Corp | Resistor paste, resistor and electronic part |
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| CN102254657A (en) | 2011-11-23 |
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Effective date of registration: 20190122 Address after: 715400 Nanpanzhuang Village, Xiangcun Town, Hancheng City, Weinan City, Shaanxi Province Patentee after: HANCHENG MICROCRYSTAL ELECTRONIC MATERIALS CO., LTD. Address before: 715400 Puzhao West Road, Hancheng New District, Shaanxi Province (west side of railway station square) Patentee before: Shaanxi Hualong Sensitive Electronic Components Co.,Ltd. |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121010 Termination date: 20200323 |