CN102231408B - 层转移太阳能电池的制造方法 - Google Patents
层转移太阳能电池的制造方法 Download PDFInfo
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- CN102231408B CN102231408B CN201110184948.3A CN201110184948A CN102231408B CN 102231408 B CN102231408 B CN 102231408B CN 201110184948 A CN201110184948 A CN 201110184948A CN 102231408 B CN102231408 B CN 102231408B
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- solar cell
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- 238000000034 method Methods 0.000 title claims abstract description 76
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- 238000012546 transfer Methods 0.000 title claims abstract description 20
- 230000008569 process Effects 0.000 claims abstract description 49
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 47
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 46
- 239000010703 silicon Substances 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 239000000463 material Substances 0.000 claims abstract description 28
- 230000008021 deposition Effects 0.000 claims abstract description 16
- 238000004381 surface treatment Methods 0.000 claims abstract description 5
- 229910021426 porous silicon Inorganic materials 0.000 claims description 19
- 238000005530 etching Methods 0.000 claims description 9
- 238000004064 recycling Methods 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 5
- 238000001039 wet etching Methods 0.000 claims description 3
- 238000013461 design Methods 0.000 claims description 2
- 238000009718 spray deposition Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 description 14
- 238000005516 engineering process Methods 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 239000010409 thin film Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 238000005507 spraying Methods 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000000280 densification Methods 0.000 description 4
- 238000007750 plasma spraying Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
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- 238000009792 diffusion process Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
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- 239000004033 plastic Substances 0.000 description 2
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- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000011856 silicon-based particle Substances 0.000 description 2
- 239000011863 silicon-based powder Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 229910004813 CaTe Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- 239000004840 adhesive resin Substances 0.000 description 1
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- 238000000137 annealing Methods 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 230000002153 concerted effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000007799 cork Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
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- 238000005137 deposition process Methods 0.000 description 1
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- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000006056 electrooxidation reaction Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009940 knitting Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000012705 liquid precursor Substances 0.000 description 1
- 238000002796 luminescence method Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000005543 nano-size silicon particle Substances 0.000 description 1
- 239000011858 nanopowder Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
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- Photovoltaic Devices (AREA)
Abstract
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Priority Applications (1)
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CN201110184948.3A CN102231408B (zh) | 2011-07-04 | 2011-07-04 | 层转移太阳能电池的制造方法 |
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CN201110184948.3A CN102231408B (zh) | 2011-07-04 | 2011-07-04 | 层转移太阳能电池的制造方法 |
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CN102231408A CN102231408A (zh) | 2011-11-02 |
CN102231408B true CN102231408B (zh) | 2015-04-08 |
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CN201110184948.3A Expired - Fee Related CN102231408B (zh) | 2011-07-04 | 2011-07-04 | 层转移太阳能电池的制造方法 |
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Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102593248B (zh) * | 2012-02-20 | 2014-10-22 | 中山大学 | 一种基于等离子刻蚀技术的背面接触晶体硅太阳电池的制备方法 |
CN108284661B (zh) * | 2018-01-31 | 2019-12-31 | 武汉华星光电半导体显示技术有限公司 | 偏光片的剥离设备及其剥离方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1198020A (zh) * | 1997-03-27 | 1998-11-04 | 佳能株式会社 | 用于生产半导体衬底的方法 |
CN1228607A (zh) * | 1998-02-18 | 1999-09-15 | 佳能株式会社 | 复合部件及其分离方法和半导体衬底的制备方法 |
TW200507086A (en) * | 2003-03-14 | 2005-02-16 | Soitec Silicon On Insulator | A method of producing substrates or components on substrates involving transfer of a useful layer, for microelectronics, optoelectronics, or optics |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US6602767B2 (en) * | 2000-01-27 | 2003-08-05 | Canon Kabushiki Kaisha | Method for transferring porous layer, method for making semiconductor devices, and method for making solar battery |
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2011
- 2011-07-04 CN CN201110184948.3A patent/CN102231408B/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1198020A (zh) * | 1997-03-27 | 1998-11-04 | 佳能株式会社 | 用于生产半导体衬底的方法 |
CN1228607A (zh) * | 1998-02-18 | 1999-09-15 | 佳能株式会社 | 复合部件及其分离方法和半导体衬底的制备方法 |
TW200507086A (en) * | 2003-03-14 | 2005-02-16 | Soitec Silicon On Insulator | A method of producing substrates or components on substrates involving transfer of a useful layer, for microelectronics, optoelectronics, or optics |
Non-Patent Citations (1)
Title |
---|
沈鸿烈,蔡红,岳之浩.准单晶硅薄膜的制备与太阳能电池研究.《第十一届中国光伏大会暨展览会会议论文集》.2011,摘要,第421页右边一栏第2段. * |
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