CN102231393A - Silicon solar cell back surface field electrode structure and preparation method - Google Patents
Silicon solar cell back surface field electrode structure and preparation method Download PDFInfo
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Abstract
The invention discloses a silicon solar cell back electrode structure and a preparation method. The silicon solar cell back electrode structure is characterized in that: an incomplete covering passivation layer is arranged between a silicon chip and an aluminum electrode, and comprises dense net-shaped micro channels; and the aluminum electrode is in contact with the silicon wafer by the micro channels to form a local back surface field in net-shaped distribution. The preparation method comprises the following steps of: forming an ordinary complete covering passivation layer on the back of the silicon wafer, printing aluminum electrode paste by adopting a screen printing technology, drying the aluminum electrode paste in a tunnel furnace, causing the dried aluminum electrode paste to enter a sintering furnace for high temperature sintering to form a back surface field electrode. The silicon solar cell back electrode structure provided by the invention can effectively suppress the recombination of photon-generated carriers on a silicon-aluminum interface and improve the photoelectric conversion efficiency of a solar cell. By the preparation method provided by the invention, the interface stress of the silicon wafer and the aluminum electrode is effectively reduced, and the bending of the silicon wafer is reduced; and the preparation method provided by the invention is more favorable for thin solar cell silicon wafers, simple, relatively lower in cost and suitable for industrial production.
Description
Technical field
The present invention relates to a kind of solar cell back surface field electrode structure and preparation method thereof.
Background technology
I am along with the develop rapidly of heliotechnics, improve solar cell photoelectric conversion efficiency, reducing production costs becomes the main target of present solar cell industry research and development.One of important means that the slimming of silicon chip material is economical with materials, reduce cost.But, the diffusion length of the photoproduction minority carrier that produces in slim substrate can be more near silicon wafer thickness, its possibility with metal back electrode and the contour recombination region contact of alusil alloy high-doped zone is increased, cause short circuit current to reduce, influence photoelectric conversion efficiency.Simultaneously, thin silicon sheet resistant to bending stresses poor performance, flexible behind the back electrode sintering, cause the percentage of damage in the assembly production process to increase.For this reason, following high efficiency solar cell wishes to form stable back of the body electric field, and the direct contact surface that reduces aluminium electrode and silicon chip again as much as possible is long-pending.
In order to arrive above-mentioned purpose, popular high performance solar batteries adopts localization diffusion preparation back of the body electric field and back electrode more at present.This is that back electrode is not a whole electrode with the contact of whole silicon back sides, and is to be spot distribution mostly.Its common manufacture method is earlier to prepare passivation layer at cell backside, then on passivation layer perforate to carry out the localization point-like highly doped, on the point that mixes, form the aluminium electrode then, actual aluminium electrode only accounts for the 1-2% of full back electrode.But shortcoming is to adopt mask to form the localization pattern, carry out localized doping and aluminium electrode plated film, Chang Yong SiO2 passivation layer mask for example, must adopt the method for photoetching to form, on technology and cost, all be not suitable for suitability for industrialized production, especially localized doping is a long-time and expensive flow process.
Also the someone proposes not adopt localized doping, and the mode that directly adopts screen printing technique to print the point-like electrode pattern at the silicon chip back side forms the aluminum back electric field of localization, but in fact the precision of the pattern of silk screen printing is too low, can not form tens of microns sizes and point electrode spaced apart, and very strict to the requirement meeting of the printing characteristic of aluminium paste, increase the cost of preparation.If the aluminum back electrode area of point-like is excessive, for example, then as broad as long with the effect of whole aluminium electrode greater than the diffusion length of minority carrier, do not have the compound effect of charge carrier that suppresses.If point-like electrode interbody spacer is excessive, then the collection of charge carrier can be affected.
In order to address the above problem, we by the solar cell front side silver electrode form the sintering mechanism that forms ohmic contact with silicon chip by passivation layer.Silver paste must be grilled thoroughly passivation layer in sintering process, could contact with silicon chip, studies show that, slurry when grilling thoroughly passivation layer and non-integral passivation layer is destroyed, contact with silicon chip but in passivation layer, form very many micron-sized passages, in view of the above, we have designed new back electrode structure and formation method.
Summary of the invention
The present invention seeks to: provide a kind of effective inhibition photo-generated carrier compound, the preparation method who has the silicon solar cell back electrode structure of higher photoelectric conversion efficiency and effectively reduce the described back electrode of suitable suitability for industrialized production of silicon chip bending.
Technical scheme of the present invention is:
A kind of silicon solar cell back electrode, comprise silicon chip and aluminium electrode, the non-passivation layer that covers fully of one deck is arranged between silicon chip and the aluminium electrode, described passivation layer is intensive network-like microchannel, described aluminium electrode contacts with described silicon chip by described microchannel, forms the localization back of the body electric field of network-like distribution.
A kind of preparation method of silicon solar cell back electrode, at first form the very thin passivation layer that covers silicon chip fully of one deck at the silicon chip back side, adopt screen printing technique to print special-purpose aluminum electrode slurry then, after in continuous tunnel furnace, drying, enter sintering furnace then and carry out high temperature sintering, in the sintering process, passivation layer will react with the compositions such as glass dust in the aluminum slurry, the part passivation layer melts, and aluminium lamination is directly with silicon chip contact and formation alusil alloy.Because melt and the penetrating of aluminium lamination of passivation layer are not completely, but have formed the microchannel of the network-like distribution of very dense, each microchannel all is the back of the body electric field of a localized doping.We can control the density and the size of above-mentioned microchannel by modes such as glass dust content and aluminium powder particle size distribution in control passivation layer thickness and the aluminium paste, form approximate equally distributed local back of the body electric field.Simultaneously, because back electrode is surperficial or the aluminium film of integral body, can guarantee the conductivity of electrode.
Further technical scheme of the present invention is:
A kind of silicon solar cell back electrode, described passivation layer is made of silica or silicon nitride or polysilicon, and thickness is a, 0nm＜a＜50nm.
A kind of preparation method of above-mentioned silicon solar cell back electrode, described passivation layer can adopt spraying or thermal oxidation or all kinds of CVD mode to form, and can regulate the thickness of described passivation layer according to formation time.
A kind of preparation method of above-mentioned silicon solar cell back electrode, described aluminum electrode slurry bake out temperature is 160-240 ℃, sintering temperature is 650-900 ℃.
The aluminium powder that comprises mass percent 70-80% of the aluminum electrode slurry of above-mentioned special use, the organic carrier of 15-25%, the unorganic glass powder of 2-8% and the functional additive of 0.5-1%.
Described aluminum particle shape is spherical or closely spherical, aluminium powder purity 〉=99.97%, described aluminium powder comprises two kinds of average grain diameter specifications, wherein a kind of is that average grain diameter is less than the preferred 0.8-1.5 m of 2um() spherical superfine aluminium power, it accounts for aluminium powder mass ratio 20%-50%, if described superfine aluminium power content is lower than aluminium powder mass percent 20%, then the passivation layer to silicon chip surface penetrates inadequately, the alusil alloy zone that forms is too small, and the aluminium doping content is low excessively, influences electrical property.If described superfine aluminium power content is greater than aluminium powder mass percent 50%, then the specific area of aluminium powder is excessive, and alumina content is too much, and mechanical performances such as pole strength will be affected, and electrode surface has the pill of aluminium or falls grey phenomenon generation.The average grain diameter of other aluminium powder is 2-10um, and it accounts for the 50%-80% of aluminium powder mass ratio.
Described glass dust can be selected leaded B for use
2
O
3
-SiO
2
-PbO P series glass, unleaded Bi
2
O
3
-SiO
2
-ZnO-B
2
O
3
In the P series glass one or both and a small amount of MgO, CaO, V
2
O
5
, one or more oxide additions such as ZnO constitute.Glass dust content is lower than 2%, and aluminium paste can not effectively penetrate passivation layer in sintering, forms required alusil alloy aluminium back of the body territory, place, and glass divides content greater than 8%, and electrode conductivuty reduces, and the stress buckling phenomenon is serious behind the silicon chip sintering simultaneously.
The setting of the content of superfine aluminium power and glass dust makes described aluminum electrode slurry have extremely strong passivation layer and grills thoroughly characteristic in the above-mentioned aluminum electrode slurry.
Described organic carrier is the mixture of organic solvents such as polymer such as cellulose family and resinae and alcohols, ethers, lipid.Main effect is a printing performance of regulating described slurry, improves the film forming of electrode slurry.Described organic carrier contains the polymer of mass percent 5 ~ 20% and 80 ~ 95% organic solvent.Polymer can be selected one or more formations such as ethyl cellulose, acrylic resin, NC Nitroncellulose, phenolic resins for use, and organic solvent can be selected terpinol, carbitol, tributyl citrate, lecithin, diethylene glycol ether etc. for use, and one or more mix formation.The mass percent 50%-75% of described organic solvent is used for preparing described organic carrier with described polymer mixed.The organic solvent of remaining mass percent 25%-50% is used for preparing the glass dust dispersion liquid.
Described functional additive can be selected coating additive commonly used for use, also can select for use surfactant, thixotropic agent, sintering aids, sticking net to prevent agent, dispersant and defoamer etc. according to printing condition and storage request etc.
The even mixed special-purpose aluminum electrode slurry of the present invention that gets of aluminium powder, glass dust, organic carrier and functional additive.
Advantage of the present invention is:
1. silicon solar cell back electrode of the present invention guarantee fully that back of the body electric field forms and electric the contact in, effectively suppress photo-generated carrier compound at the sial interface, the photoelectric conversion efficiency of raising solar cell.
The preparation method of silicon solar cell back electrode of the present invention will reduce the interfacial stress of silicon chip and aluminium electrode, reduces the silicon chip bending, and is more favourable to slim silicon chip of solar cell.
The preparation method's of silicon solar cell back electrode of the present invention technology is simple, and cost is lower, is fit to suitability for industrialized production.
Description of drawings
Below in conjunction with drawings and Examples the present invention is further described:
Fig. 1 is silicon solar cell back electrode easy structure figure before the sintering
Fig. 2 is silicon solar cell back electrode easy structure figure behind the sintering;
Fig. 3 is the back electrode profile;
Wherein: 1, silicon chip, 21, the non-passivation layer that covers fully behind the sintering, 22, the passivation layer that covers fully before the sintering, 31, the aluminium electrode behind the sintering, 32, the aluminum electrode slurry of printing before the sintering, 4, the microchannel of the network-like distribution that behind sintering, forms of passivation layer, 5, the localization back of the body electric field of spot distribution, 6, the not ruined zone of passivation layer.
Embodiment
Shown in figure one: a kind of silicon solar cell back electrode, comprise silicon chip 1 and aluminium electrode 31, the non-passivation layer 21 that covers fully of one deck is arranged between silicon chip and the aluminium electrode, described passivation layer 21 comprises intensive network-like microchannel 4, described aluminium electrode 31 contacts with described silicon chip 1 by described microchannel 4, forms the localization back of the body electric field of spot distribution.
Shown in figure two and figure three: a kind of preparation method of silicon solar cell back electrode, at first form the passivation layer 22 of common comprehensive covering during preparation at the silicon chip back side, adopt the above-mentioned aluminum electrode slurry 32 of screen printing technique printing then, after in continuous tunnel furnace, drying, enter sintering furnace then and carry out high temperature sintering formation back of the body field plate, the part passivation layer is grilled thoroughly by aluminium paste in the sintering process, form intensive network-like microchannel 4, the aluminium electrode 31 behind the sintering contacts the localization back of the body electric field 5 that forms spot distribution with silicon chip 1 by microchannel 4.
Embodiment 1:
The preparation of special-purpose aluminium paste: according to the mass percent weighing,
Glass dust 5%,
Resin 1%,
Terpinol 10%,
Diethylene glycol dimethyl ether 8%,
Butyl carbitol acetate 5%,
Average grain diameter is the spherical aluminium powders 40.5% of 5.62 um,
Average grain diameter is the spherical aluminium powder 31.5% of 1.5um,
Functional additive: 0.5%,
Wherein, glass dust adopts unleaded Bi
2
O
3
-SiO
2
-ZnO-B
2
O
3
P series glass, 496 ℃ of softening points, average grain diameter 3.22um
With ethyl cellulose, resin, terpinol, butyl carbitol acetate, be heated to 70-90 ℃, cellulose and resin are dissolved fully, form transparent organic carrier.
With aluminium powder, organic carrier, glass dust, and functional additive adding stirrer for mixing one-tenth preparation material use the mixing one-tenth fineness of three-roll grinder less than 20um then, and the electrode of viscosity 3.5-4.5 ten thousand mPas forms special-purpose aluminum electrode slurry
The monocrystalline silicon substrate back side of the specification 125mmx125mm two sides making herbs into wool after handling through making herbs into wool, diffusion and surface passivation adopts the PECVD technology to form one deck silicon nitride passivation, film formation time 20s.
Then above-mentioned gained electrode slurry is formed electrode film by silk screen printing on passivation layer, experimentize on production line, print thickness is every and uses slurry 0.9g, advances the continuous tunnel furnace oven dry, 200 ℃ of temperature.Oven dry back aluminum film electrode does not have obscission, changes another side printing front side silver paste then, dries laggard continuous tunnel furnace sintering, 850 ℃ of peak temperatures, and electrical property, substrate flexibility, electrodes and outward appearance are measured in the back of coming out of the stove.
Embodiment 2
The preparation of special-purpose aluminum electrode slurry is with embodiment 1.
The monocrystalline silicon substrate back side of the specification 125mmx125mm two sides making herbs into wool after handling through making herbs into wool, diffusion and surface passivation adopts the PECVD technology to form one deck silicon nitride passivation, film formation time 10s.All the other processes are with embodiment 1.
Embodiment 3
The preparation of special-purpose aluminium paste: according to the mass percent weighing:
Glass dust 7%,
Average grain diameter is the spherical aluminium powders 43.5% of 5.62 um,
Average grain diameter is the spherical aluminium powder 31.5% of 1.5um,
Ethyl cellulose 0.8%,
Resin 0.8%,
Terpinol 8%,
Diethylene glycol dimethyl ether 4%,
Butyl carbitol acetate 3.9%,
Functional additive 0.5%,
All the other are filled a prescription with embodiment 1,
The preparation of all the other special-purpose aluminium pastes is with embodiment 1,
All the other are with embodiment 2.
Comparative example 1
Adopt the common aluminium paste of buying on the market at present, directly print the aluminium electrode on the monocrystalline silicon substrate of the specification 125mmx125mm two sides making herbs into wool after handling through making herbs into wool, diffusion and surface passivation, print thickness is every and uses slurry 0.9g, advances the continuous tunnel furnace oven dry, 200 ℃ of temperature.Oven dry back aluminum film electrode does not have obscission, changes another side printing front side silver paste then, dries laggard continuous tunnel furnace sintering, 850 ℃ of peak temperatures, and electrical property, substrate flexibility, electrodes and outward appearance are measured in the back of coming out of the stove.
Every performance mean value of measuring is as shown in table 1:
Table 1
As shown in table 1, adopt the solar cell of back electrode structure of the present invention and formation method preparation, its short circuit current is at embodiment 2 and reached more than the 5.5A in 3 o'clock, photoelectric conversion efficiency has also reached more than 17.1%, simultaneously flexibility is very for a short time is lower than 1mm, therefore adjusting aluminium paste prescription and passivation layer thickness, solar battery efficiency has been reached more than the average behavior of present common solar cell, is a kind of very effective back of the body field electrode configuration and formation means.
Claims (9)
1. silicon solar cell back electrode, comprise silicon chip and aluminium electrode, it is characterized in that having between silicon chip and the aluminium electrode the non-passivation layer that covers fully of one deck, described passivation layer is made of the intensive network-like microchannel of random distribution, described aluminium electrode contacts with described silicon chip by described microchannel, forms the localization back of the body electric field of network-like distribution.
2. back electrode of solar cell according to claim 1 is characterized in that the described non-passivation layer that covers fully is to grill thoroughly type aluminium paste co-sintered by the height that thin common passivation layer of one deck and top printing apply to form.
3. the preparation method of a silicon solar cell back electrode, it is characterized in that at first forming the common passivation layer that covers fully at the silicon chip back side, adopt screen printing technique printing aluminum electrode slurry then, in continuous tunnel furnace, after the oven dry, enter sintering furnace then and carry out high temperature sintering formation back of the body field plate.
4. the preparation method of silicon solar cell back electrode according to claim 3, the common passivation layer that covers fully that forms before printing aluminium paste and sintering described in it is characterized in that is made of silica or silicon nitride or polysilicon, thickness is a, 0nm＜a＜50nm.
5. according to the preparation method of claim 3 or 4 described silicon solar cell back electrodes, it is characterized in that the described common passivation layer that covers fully can adopt spraying or thermal oxidation or all kinds of CVD mode to form.
6. the preparation method of silicon solar cell back electrode according to claim 3 is characterized in that described aluminum electrode slurry has extremely strong passivation layer and grills thoroughly characteristic.
7. the preparation method of silicon solar cell back electrode according to claim 3, it is characterized in that described aluminum electrode slurry comprises the aluminium powder of two kinds of average grain diameter specifications, wherein a kind of spherical superfine aluminium power that is average grain diameter less than 2um, it accounts for the 20%-50% of aluminium powder mass ratio, the average grain diameter of other aluminium powder is 2-10um, and it accounts for the 50%-80% of aluminium powder mass ratio; The total content of the aluminium powder of two kinds of specifications accounts for the 70-80% of aluminum electrode slurry mass ratio.
8. the preparation method of silicon solar cell back electrode according to claim 3 is characterized in that described aluminum electrode slurry comprises the unorganic glass powder, and its content accounts for the 2-8% of aluminum electrode slurry mass ratio.
9. the preparation method of silicon solar cell back electrode according to claim 3 is characterized in that described aluminum electrode slurry bake out temperature is 160-240 ℃, and sintering temperature is 650-900 ℃.
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| CN103066135A (en) * | 2013-01-17 | 2013-04-24 | 中山大学 | Front electrode main grid line and silicon substrate isolated selective emitter solar battery and preparation method thereof |
| CN103208558A (en) * | 2012-01-16 | 2013-07-17 | E.I.内穆尔杜邦公司 | A Solar Cell Back Side Electrode |
| CN103474484A (en) * | 2013-09-16 | 2013-12-25 | 深圳先进技术研究院 | Back electrode of solar battery device, preparation method of back electrode and solar battery device |
| CN104241417A (en) * | 2014-07-16 | 2014-12-24 | 友达光电股份有限公司 | Solar cell |
| WO2018006449A1 (en) * | 2016-07-08 | 2018-01-11 | 南通天盛新能源股份有限公司 | High-efficiency crystalline silicon solar cell local back surface field aluminium slurry and application thereof in perc cell |
| CN109755329A (en) * | 2018-12-11 | 2019-05-14 | 苏州腾晖光伏技术有限公司 | A kind of preparation method of solar battery |
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Application publication date: 20111102 |