CN102222706B - 一种高倍聚光太阳能电池芯片 - Google Patents
一种高倍聚光太阳能电池芯片 Download PDFInfo
- Publication number
- CN102222706B CN102222706B CN 201110176319 CN201110176319A CN102222706B CN 102222706 B CN102222706 B CN 102222706B CN 201110176319 CN201110176319 CN 201110176319 CN 201110176319 A CN201110176319 A CN 201110176319A CN 102222706 B CN102222706 B CN 102222706B
- Authority
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- China
- Prior art keywords
- solar battery
- battery chip
- main grid
- high concentration
- grid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 210000001624 hip Anatomy 0.000 claims abstract description 8
- 238000003466 welding Methods 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 57
- 239000000463 material Substances 0.000 claims description 14
- 239000011241 protective layer Substances 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
- 239000006117 anti-reflective coating Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 229910000927 Ge alloy Inorganic materials 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 230000005494 condensation Effects 0.000 abstract 1
- 238000009833 condensation Methods 0.000 abstract 1
- 230000003064 anti-oxidating effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000013021 overheating Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 241000826860 Trapezium Species 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (13)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201110176319 CN102222706B (zh) | 2011-06-28 | 2011-06-28 | 一种高倍聚光太阳能电池芯片 |
US14/124,566 US9006562B2 (en) | 2011-06-28 | 2012-05-07 | High-concentration solar cell chip |
PCT/CN2012/075135 WO2013000339A1 (zh) | 2011-06-28 | 2012-05-07 | 一种高倍聚光太阳能电池芯片 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201110176319 CN102222706B (zh) | 2011-06-28 | 2011-06-28 | 一种高倍聚光太阳能电池芯片 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102222706A CN102222706A (zh) | 2011-10-19 |
CN102222706B true CN102222706B (zh) | 2012-11-14 |
Family
ID=44779209
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 201110176319 Active CN102222706B (zh) | 2011-06-28 | 2011-06-28 | 一种高倍聚光太阳能电池芯片 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9006562B2 (zh) |
CN (1) | CN102222706B (zh) |
WO (1) | WO2013000339A1 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102222706B (zh) | 2011-06-28 | 2012-11-14 | 厦门市三安光电科技有限公司 | 一种高倍聚光太阳能电池芯片 |
CN102820376A (zh) * | 2012-08-16 | 2012-12-12 | 天津三安光电有限公司 | 一种太阳电池芯片电极的制备方法 |
DE102019008106B4 (de) | 2019-11-21 | 2022-06-09 | Azur Space Solar Power Gmbh | Stapelförmige Mehrfachsolarzelle und Herstellungsverfahren |
CN113690333B (zh) * | 2020-05-18 | 2024-04-16 | 苏州阿特斯阳光电力科技有限公司 | 太阳能电池、电池片及光伏组件 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4227942A (en) * | 1979-04-23 | 1980-10-14 | General Electric Company | Photovoltaic semiconductor devices and methods of making same |
WO1988003319A1 (en) * | 1986-10-24 | 1988-05-05 | Anritsu Corporation | Electric resistor equipped with thin film conductor and power detector |
DE3712503A1 (de) * | 1987-04-13 | 1988-11-03 | Nukem Gmbh | Solarzelle |
ES2169078T3 (es) * | 1993-07-29 | 2002-07-01 | Gerhard Willeke | Procedimiento para fabricacion de una celula solar, asi como la celula solar fabricada segun este procedimiento. |
JP3310887B2 (ja) * | 1996-11-25 | 2002-08-05 | シャープ株式会社 | 太陽電池セルおよびその製造方法 |
JP2000208804A (ja) | 1999-01-11 | 2000-07-28 | Mitsubishi Heavy Ind Ltd | 三角形型集積化太陽電池モジュ―ル及びその製造方法 |
PT1355359E (pt) * | 2002-03-19 | 2007-07-13 | Scheuten Glasgroep Bv | Conexão em série de auto-ajuste de camadas finas e grossas e processo para o fabrico. |
CN101241941A (zh) * | 2007-02-06 | 2008-08-13 | 上海华达运新能源科技有限公司 | 一种硅光电池 |
JP4904320B2 (ja) | 2008-08-20 | 2012-03-28 | シャープ株式会社 | 集積型薄膜太陽電池の製造方法 |
JP5362379B2 (ja) * | 2009-02-06 | 2013-12-11 | 三洋電機株式会社 | 太陽電池のi−v特性の測定方法 |
CN201436683U (zh) * | 2009-04-03 | 2010-04-07 | 上海晶龙光电科技有限公司 | 太阳能电池的电极结构 |
US20110296726A1 (en) * | 2010-04-06 | 2011-12-08 | Kari Rinko | Laminate structure with embedded cavities and related method of manufacture |
JP4944240B1 (ja) * | 2010-11-30 | 2012-05-30 | シャープ株式会社 | 裏面電極型太陽電池セル、配線シート付き裏面電極型太陽電池セル、太陽電池モジュール、配線シート付き裏面電極型太陽電池セルの製造方法および太陽電池モジュールの製造方法 |
CN102044573B (zh) * | 2010-11-30 | 2012-12-05 | 奥特斯维能源(太仓)有限公司 | 一种太阳能电池栅线电极 |
US8415554B2 (en) * | 2011-01-24 | 2013-04-09 | The United States Of America As Represented By The Secretary Of The Navy | Metamaterial integrated solar concentrator |
WO2012129707A1 (en) * | 2011-03-31 | 2012-10-04 | Ats Automation Tooling Systems Inc. | Photovoltaic cell tab and method and system for forming photovoltaic cell tabs |
US20120285519A1 (en) * | 2011-05-10 | 2012-11-15 | Emcore Solar Power, Inc. | Grid design for iii-v compound semiconductor cell |
CN102222706B (zh) | 2011-06-28 | 2012-11-14 | 厦门市三安光电科技有限公司 | 一种高倍聚光太阳能电池芯片 |
-
2011
- 2011-06-28 CN CN 201110176319 patent/CN102222706B/zh active Active
-
2012
- 2012-05-07 US US14/124,566 patent/US9006562B2/en active Active
- 2012-05-07 WO PCT/CN2012/075135 patent/WO2013000339A1/zh active Application Filing
Also Published As
Publication number | Publication date |
---|---|
CN102222706A (zh) | 2011-10-19 |
WO2013000339A1 (zh) | 2013-01-03 |
US9006562B2 (en) | 2015-04-14 |
US20140102534A1 (en) | 2014-04-17 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: TIANJIN SAN AN OPTOELECTRONICS CO., LTD. Free format text: FORMER OWNER: XIAMEN SAN AN PHOTOELECTRIC TECHNOLOGY CO., LTD. Effective date: 20130514 |
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C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 361009 XIAMEN, FUJIAN PROVINCE TO: 300384 BINHAI NEW DISTRICT, TIANJIN |
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TR01 | Transfer of patent right |
Effective date of registration: 20130514 Address after: 300384 Tianjin Haitai Huayuan Industrial Zone Binhai Road No. 20 Patentee after: Tianjin San'an Optoelectronics Co., Ltd. Address before: Siming District of Xiamen City, Fujian province 361009 Luling Road No. 1721-1725 Patentee before: Xiamen San'an Photoelectric Technology Co., Ltd. |