CN102220563A - Partial pressure control large-area magnetron sputtering coating system and method thereof - Google Patents
Partial pressure control large-area magnetron sputtering coating system and method thereof Download PDFInfo
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- CN102220563A CN102220563A CN2011101252059A CN201110125205A CN102220563A CN 102220563 A CN102220563 A CN 102220563A CN 2011101252059 A CN2011101252059 A CN 2011101252059A CN 201110125205 A CN201110125205 A CN 201110125205A CN 102220563 A CN102220563 A CN 102220563A
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Abstract
The invention relates to a partial pressure control large-area magnetron sputtering coating system and a method thereof. In the method, a partial pressure sensor and a closed-loop control system monitor and control the partial pressure of reaction gases, and when changing, the partial pressure of the reaction gases can be reset to preset values by regulating gas flow (see figure 3). When the method is used, the 'instable' problem of gas flow control can be solved effectively, so that a reaction sputtering process can go on continuously and stably in a set chemical mixing ratio; therefore, the problem of the uniformity in thickness and performance of large-care coated products is solved. The system comprises a sputtering chamber and a plurality of magnetron targets arranged in the sputtering chamber, wherein a plurality of gas branch manifolds are arranged at corresponding positions of the magnetron targets; each gas branch manifold corresponds to a branch manifold area; partial pressure monitoring and controlling devices are arranged in the areas; and each gas branch manifold is connected with a gas flow meter controller. The partial pressure monitoring and controlling devices are connected with corresponding balance set point channels respectively, the balance set point channels are connected with the gas flow meter controllers, and thus, a closed control system is formed.
Description
Technical field
The present invention relates to a kind of minute pressure-controlled big area magnetron sputtering coating system and method thereof.
Background technology
The big area magnetron sputtering plating is used more and more widely at present, its technological core is exactly the precision control to large size successive reaction sputter procedure, comprise design to plated film chamber and circuit thereof, gas circuit, the real-time monitoring of system parameter, the real-time feedback of film thickness and performance index etc., for the control of absorption layer reactive sputtering process, be the difficult point place of whole coating process especially.
In reactive sputtering process, one or more reactant gasess (as oxygen or nitrogen) are added in the sputtering atmosphere, thereby deposition generation target material (generally is a metal or alloy on matrix, also can be semi-conductor simple substance, as silicon, below for the sake of simplicity, be commonly referred to as " metal ") with the reaction product of gas.A key character of reactive sputtering is (to be applicable to most of vacuum sputter system) under the certain situation of vacuum pumping speed, chamber pressure (total gas pressure or reactant gases dividing potential drop) is nonlinearities change with the airshed of reactant gases, and has asymmetric time stagnant line (Asymme-tric Hysteresis) feature mostly.This is because chemical reaction " extraction " (" pumping ") reactant gases effectively can be passed through in initial reaction stage in the target body surface of cleaning, so chamber pressure increases hardly or increases slowly, the product of sputter at this moment is the mixture of rich metal, and this stage is called first steady stage or " metallic state stage ".When the reactant gases airshed is increased to a certain degree, " bleeding " speed of target body surface reaction can not be caught up with the speed that reactant gases increases, at this moment the complete combined thing in target body surface covers and enters " poisoning " (" Poisoned ") state, " target pump " disappears, chamber pressure is increased sharply, on air pressure-flow curve, present and rise to a little, cavity air pressure increases very fast with the increase of airshed afterwards, curve turns round and entered for second steady stage, the product of sputter this moment is compound fully, so this stage also is called " compound stage ".When from " compound stage " when down reducing reaction gas flow, chamber pressure is along with its identical path change when upwards increasing at first, arriving when rising to a corresponding atmospheric pressure value last time not, downward jump does not take place in horse back, to a certain degree just take place but lag behind at lower atmospheric pressure value, this moment target " sterilization ", " target pump " reworks, and " metallic state stage " got back to by system.The stagnant line feature of this time is because the asymmetry of system under the target poisoning and two dynamical states of sterilizing causes.
Because the selective absorption film absorption layer is the metallic cermet films of gradient distribution, its deposition process is equivalent to the B point (" B spot deposition ") of elder generation from rich metal, augmenting response gas flow gradually, finally the D point (" D spot deposition ") that carries out the transition to the compound stage along the C point (Fig. 1).This naturally intuitively thinking make air-flow control become the first-selection of selective absorption film absorption layer reactive sputtering control, also be a kind of control mode of using comparative maturity now.
But the shortcoming of air-flow control mode is also very outstanding-because the BCD section curve of its work between stable " the metallic state stage " and " compound stage ", be to be in astable transitory stage, the atmosphere or the circuit of system changes slightly (as the fluctuating of airshed and vacuum pumping speed, the fluctuation of target body voltage or power etc.), just be easy to cause reaction to enter chemical combination states of matter or metallic state (" unstability ") along curve, thereby depart from the stoicheiometry of absorption layer needs, influence coating performance.In addition, working not only in the compound stage, film deposition rate reduces greatly, more seriously, if the compound that generates is an isolator, after target entered " poisoning " state, electrode surface was capped and causes circuit system to disconnect or the anode disappearance, and the dc reactive sputtering process is interrupted, arc-over be can also cause, target and vacuum system destroyed.
Other control methods commonly used also have voltage control.Voltage control is under fixed reaction gas flow and power, setting target body magnitude of voltage is also monitored it in the reactive sputtering process, its advantage is that the voltage monitoring signal can directly obtain (not having cost) from shielding power supply, it changes by the plasma impedance variation and causes, the direction and the amplitude that change when given system is reacted sputter are certain, and pace of change is fast; Its shortcoming is that the factor that causes the target body voltage change the partial pressure variation, comprises that also the plasma composition that causes because of gas leakage, venting and other reactant gasess changes in reactive sputtering.In addition, the target body deterioration, the fluctuation of ar pressure and chamber temp, and process such as anode disappearance can cause that also plasma impedance changes and causes target body voltage deviation set(ting)value.
Because economy is first determinative often, domestic most coating process all adopts air-flow control at present.Reducing " unstability " odds or frequency in the air-flow control, is the key issue that present coating process need solve.Possible terms of settlement comprises the mild sputter material of selection loop line, many gas reactions sputter, strengthens vacuum pumping speed etc., but, if realize large size successive reaction sputter coating, air-flow control or voltage control can not satisfy the requirement of precision and production efficiency.
Summary of the invention
Purpose of the present invention is exactly for addressing the above problem, a kind of minute pressure-controlled big area magnetron sputtering coating system and method thereof are provided, it satisfies the precision of large-area coating film control and the requirement of production efficiency, by dividing potential drop inductor block and closed-loop control system monitoring reactant gases dividing potential drop, when changing, it make it get back to set(ting)value (Fig. 3) by regulating airshed.This method can effectively be eliminated " unstability " problem in the air-flow control, makes reactive sputtering process to carry out continuously and stably under the stoicheiometry of setting, and effectively solves the thickness of large-area coating film product and the homogeneity question of performance.
For achieving the above object, the present invention adopts following technical scheme:
A kind of minute pressure-controlled big area magnetron sputtering coating system, it comprises sputtering chamber, in sputtering chamber, be provided with a plurality of magnetic controlling targets, be provided with a plurality of gas branch manifolds in the magnetic controlling target corresponding position, the corresponding branch manifold zone of each gas branch manifold, be provided with the dividing potential drop monitoring device in this zone, each gas branch manifold is connected with the anemometer controller; Described dividing potential drop monitoring device is connected with corresponding balance setting point passage respectively, and balance setting point passage is connected with the anemometer controller, forms closed loop control system.
Described dividing potential drop monitoring device is a collimator tube.
The method of a kind of minute pressure-controlled big area magnetron sputtering coating system, it is by the dividing potential drop control mode, promptly adopt a plurality of gas branch manifolds reactant gases evenly to be provided for the large size matrix, and at each branch manifold zone arrangement dividing potential drop monitoring device, by the reactant gases dividing potential drop in the sputtering chamber is monitored, determine the relative size of reactant gases dividing potential drop with the method for real-time measurement particular plasma body constituent element optical emitting spectrum, after setting point is compared, send instruction for the anemometer controller by reaction circuit, regulate reflection gas air input and under set component, carry out, at gas flow with the control reactive sputtering, the dividing potential drop parameter space carry out the successive reactive sputtering more arbitrarily.
The present invention evenly provides reactant gases for the large size matrix by adopting a plurality of gas branch manifolds, and at each branch manifold zone arrangement dividing potential drop monitoring device, by the reactant gases dividing potential drop in the sputtering chamber is monitored, determine the relative size of oxygen partial pressure with the method (employing collimator tube) of real-time measurement particular plasma body constituent element optical emitting spectrum, after setting point is compared, send instruction for the anemometer controller by reaction circuit, regulate reflection gas air input and under set component, carry out with the control reactive sputtering.
Advantage of the present invention is " unstability " problem that can effectively eliminate in the air-flow control, makes reactive sputtering process can carry out the thickness and the performance problem of non-uniform that occur when solving large-area coating film continuously and stably under the stoicheiometry of setting; And can be in the gas standard space (air-flow, dividing potential drop) carry out the successive reactive sputtering more arbitrarily, thereby have maximum coated designs degree of freedom and excellent production efficiency.
Description of drawings
Fig. 1 is existing selective absorption film absorption layer deposition process figure;
Fig. 2 is the relation of gas flow and its dividing potential drop;
Fig. 3 is voltage divider system figure;
Fig. 4 is a gas branch manifold structure iron;
Fig. 5 is the relation of serialization coating film thickness with change in location.
Wherein, 1 magnetic controlling target, 2 gas branch manifolds, 3 anemometer controllers, 4. collimator tube, 5. balance setting point passage.
Embodiment
The present invention will be further described below in conjunction with accompanying drawing and embodiment.
Among Fig. 3, Fig. 4, it comprises sputtering chamber, in sputtering chamber, be provided with a plurality of magnetic controlling targets 1, be provided with a plurality of gas branch manifolds 2 in magnetic controlling target 1 corresponding position, each gas branch manifold 2 corresponding branch manifold zone, be provided with the dividing potential drop monitoring device in this zone, each gas branch manifold 2 is connected with anemometer controller 3; Described dividing potential drop monitoring device is connected with corresponding balance setting point passage 5 respectively, and balance setting point passage is connected with anemometer controller 3, forms closed loop control system.
Described dividing potential drop monitoring device is a collimator tube 4.
The method of dividing pressure-controlled big area magnetron sputtering coating system: it is by the dividing potential drop control mode, promptly adopt a plurality of gas branch manifolds reactant gases evenly to be provided for the large size matrix, and at each branch manifold zone arrangement dividing potential drop monitoring device, by the reactant gases dividing potential drop in the sputtering chamber is monitored, determine the relative size of reactant gases dividing potential drop with the method for real-time measurement particular plasma body constituent element optical emitting spectrum, after setting point is compared, send instruction for the anemometer controller by reaction circuit, regulate reflection gas air input and under set component, carry out, at gas flow with the control reactive sputtering, the dividing potential drop parameter space carry out the successive reactive sputtering more arbitrarily.
Be in certain vacuum system, to keep under the oxygen situation equal TiO shown in Fig. 2 with nitrogen partial pressure
xN
yThe relation of reaction gas flow and its dividing potential drop in the reactive sputtering process.By controlling oxygen and nitrogen partial pressure simultaneously, can be in the gas standard space (air-flow, dividing potential drop) carry out the successive reactive sputtering more arbitrarily, thereby have maximum coated designs degree of freedom and excellent production efficiency.
By the dividing potential drop control mode is to adopt a plurality of gas branch manifolds reactant gases evenly to be provided for the large size matrix, and at each branch manifold zone arrangement dividing potential drop monitoring device, by the reactant gases dividing potential drop in the sputtering chamber is monitored, determine the relative size of reflection partial pressure with the method (employing collimator tube) of real-time measurement particular plasma body constituent element optical emitting spectrum, after setting point is compared, send instruction for the anemometer controller by reaction circuit, regulate reflection gas air input and under set component, carry out (Fig. 3) with the control reactive sputtering.
On the width of the length direction/matrix of target, three gas branch manifolds (concrete structure is seen Fig. 3) have been installed, and collimator tube is set near each branch manifold (Fig. 4) is that partial pressure control system is collected the plasma optics signal, like this, can guarantee on large-sized matrix to realize thickness evenly, composition serialization plated film accurately.
Fig. 5 is that three kinds of films are that the serialization coating film thickness is with the relation of change in location on the matrix after using gas branch manifold and the monitoring of regional dividing potential drop, and in 0～1200nm width range, the uniformity coefficient of film thickness is ± 1.5%.
Claims (3)
1. branch pressure-controlled big area magnetron sputtering coating system, it is characterized in that, it comprises sputtering chamber, in sputtering chamber, be provided with a plurality of magnetic controlling targets, be provided with a plurality of gas branch manifolds in the magnetic controlling target corresponding position, the corresponding branch manifold zone of each gas branch manifold is provided with the dividing potential drop monitoring device in this zone, and each gas branch manifold is connected with the anemometer controller; Described dividing potential drop monitoring device is connected with corresponding balance setting point passage respectively, and balance setting point passage is connected with the anemometer controller, forms closed loop control system.
2. as claimed in claim 1 minute pressure-controlled big area magnetron sputtering coating system is characterized in that described dividing potential drop monitoring device is a collimator tube.
3. method that adopts described minute pressure-controlled big area of claim 1 magnetron sputtering coating system, it is characterized in that, it is by the dividing potential drop control mode, promptly adopt a plurality of gas branch manifolds reactant gases evenly to be provided for the large size matrix, and at each branch manifold zone arrangement dividing potential drop monitoring device, by the reactant gases dividing potential drop in the sputtering chamber is monitored, determine the relative size of reactant gases dividing potential drop with the method for real-time measurement particular plasma body constituent element optical emitting spectrum, after setting point is compared, send instruction for the anemometer controller by reaction circuit, regulate reflection gas air input and under set component, carry out, at gas flow with the control reactive sputtering, the dividing potential drop parameter space carry out the successive reactive sputtering more arbitrarily.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103882397A (en) * | 2014-03-14 | 2014-06-25 | 京东方科技集团股份有限公司 | Reaction cavity and magnetron sputtering equipment |
| CN104018125A (en) * | 2013-02-28 | 2014-09-03 | 三星显示有限公司 | Sputtering device and sputtering method using same |
| CN104694890A (en) * | 2015-01-05 | 2015-06-10 | 湖南普照信息材料有限公司 | Sputtering chamber pressure stabilizing method, sputter coating method and stable-pressure sputtering device |
| CN105470088A (en) * | 2014-09-30 | 2016-04-06 | 株式会社思可林集团 | Plasma processing apparatus and plasma processing method |
| CN107881480A (en) * | 2017-12-25 | 2018-04-06 | 苏州浩联光电科技有限公司 | A kind of plated film flight balance device and coating system |
| CN108441838A (en) * | 2018-03-21 | 2018-08-24 | 中国兵器科学研究院宁波分院 | A kind of method of Large diameter optical element surface ion beam sputter depositing film |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104018125A (en) * | 2013-02-28 | 2014-09-03 | 三星显示有限公司 | Sputtering device and sputtering method using same |
| CN104018125B (en) * | 2013-02-28 | 2019-05-17 | 三星显示有限公司 | A kind of sputtering equipment and the sputtering method using the sputtering equipment |
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| CN105470088A (en) * | 2014-09-30 | 2016-04-06 | 株式会社思可林集团 | Plasma processing apparatus and plasma processing method |
| CN105470088B (en) * | 2014-09-30 | 2017-07-28 | 株式会社思可林集团 | Plasma processing apparatus and method of plasma processing |
| CN104694890A (en) * | 2015-01-05 | 2015-06-10 | 湖南普照信息材料有限公司 | Sputtering chamber pressure stabilizing method, sputter coating method and stable-pressure sputtering device |
| CN104694890B (en) * | 2015-01-05 | 2017-03-29 | 湖南普照信息材料有限公司 | Sputtering chamber pressure stability method, sputtering film coating method and voltage stabilizing sputter equipment |
| CN107881480A (en) * | 2017-12-25 | 2018-04-06 | 苏州浩联光电科技有限公司 | A kind of plated film flight balance device and coating system |
| CN108441838A (en) * | 2018-03-21 | 2018-08-24 | 中国兵器科学研究院宁波分院 | A kind of method of Large diameter optical element surface ion beam sputter depositing film |
| CN108441838B (en) * | 2018-03-21 | 2020-04-17 | 中国兵器科学研究院宁波分院 | Method for ion beam sputtering deposition of film on surface of medium-large diameter optical element |
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Application publication date: 20111019 |