CN102208338A - Sapphire-base compound substrate and manufacturing method thereof - Google Patents
Sapphire-base compound substrate and manufacturing method thereof Download PDFInfo
- Publication number
- CN102208338A CN102208338A CN2010101563975A CN201010156397A CN102208338A CN 102208338 A CN102208338 A CN 102208338A CN 2010101563975 A CN2010101563975 A CN 2010101563975A CN 201010156397 A CN201010156397 A CN 201010156397A CN 102208338 A CN102208338 A CN 102208338A
- Authority
- CN
- China
- Prior art keywords
- layer
- sapphire
- nitride
- based compound
- compound substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention provides a sapphire-base compound substrate and a manufacturing method thereof. The sapphire-base compound substrate is used for preparing a nitride semiconductor epitaxial material and is characterized by comprising a sapphire-base monocrystal substrate, a compound stress covariant layer which is covered on the sapphire-base monocrystal substrate and formed by alternatively stacking an aluminum nitride monocrystal thin film material and a multi-layer titanium nitride monocrystal thin film material, and a gallium nitride template layer which grows on the compound stress covariant layer and consists of a gallium nitride monocrystal thin film material.
Description
Technical field
The present invention relates to be used for the substrate of epitaxial growth of semiconductor material growth, more specifically, relate to a kind of process for sapphire-based compound substrate that is used to prepare the nitride semiconductor epitaxial material.
Background technology
Nitride-based semiconductor, especially gallium nitride (GaN) are the core materials that preparation is applied to light-emitting diode (LED) device in semiconductor lighting and display backlight field.Owing to lack the homoplasmon monocrystal material, the device application of GaN material is carried out in heterogeneous substrate usually, and that the most frequently used is sapphire (a-Al
2O
3) substrate.But because sapphire substrates and GaN material can run into problem aspect two in lattice constant and thermal coefficient of expansion existence than big-difference: (1) Macrolattice mismatch problem: because of the lattice constant of GaN (a=0.3189nm, c=0.5185nm) and a-Al
2O
3Lattice constant (a=0.4758nm, c=1.299nm) difference causes at the GaN epitaxial loayer epitaxial growth initial stage and produces very large lattice mismatch stress, (several nm, tens nm or hundreds of nm are thick when the thickness of Grown GaN epitaxial loayer surpasses a certain critical thickness, specifically decide on the intermediate layer situation of introducing) after, this Macrolattice mismatch stress that accumulates in the GaN epitaxial loayer will be to discharge the performance that this will cause the deterioration of GaN epitaxial loayer crystalline quality and then reduce follow-up LED device in the form that produces dislocation and defective at the interface; (2) big thermal mismatch problem: because of thermal coefficient of expansion (a:5.59 * 10 of GaN
-6K, c:3.17 * 10
-6K) and a-Al
2O
3Thermal coefficient of expansion (a:7.5 * 10
-6K, c:8.5 * 10
-6K) also exist big-difference to cause GaN epitaxial loayer or LED device architecture to gather very large thermal stress from very high growth temperature (as 800～1100 ℃) drops to the process of room temperature very much, this thermal stress is a kind of compression and then the bending that causes the GaN epitaxial loayer for the GaN epitaxial loayer.The GaN epitaxial loayer that big thermal stress and bending are gathered in employing prepares the LED device, certainly will influence the raising of LED device performance and yields.Shift and coordinate to discharge sapphire (a-Al at present
2O
3) common method of the big mismatch stress of GaN epitaxial loayer has in the substrate: stress covariant layer (comprising resilient coating, flexible layer, insert layer etc.) and graph substrate.Existing stress covariant layer, as low temperature GaN resilient coating, AlGaN content gradually variational resilient coating, thin AlN flexible layer, thin InAlGaN flexible layer etc., although have better effects aspect transfer and the coordination release Macrolattice mismatch stress, effect is limited aspect transfer and the big thermal mismatch stress of coordination release.And the graph substrate method need be done mask and litho pattern (figure of nanometer or micro-meter scale) on sapphire substrates or GaN epitaxial loayer, because of being difficult to reduce, window place dislocation density needs repeatedly mask and litho pattern, complex process and further raised the material preparation cost, also be difficult to simultaneously obtain no bending and the uniform large scale GaN epitaxial film materials of crystalline quality, as the GaN epitaxial film materials more than the 2 inches diameter.
Summary of the invention
The objective of the invention is at sapphire (a-Al
2O
3) Macrolattice mismatch in the substrate in the preparation GaN-based LED epitaxial wafer material, big thermal mismatching and surface chemistry problem and the deficiencies in the prior art, a kind of process for sapphire-based compound substrate that is used for the GaN-based LED epitaxial wafer material preparation is provided.
The invention provides a kind of process for sapphire-based compound substrate that is used to prepare the nitride semiconductor epitaxial material, it is characterized in that, comprise: a sapphire single-crystal substrate; One combined stress covariant layer covers in the described sapphire single-crystal substrate, is alternately piled up by nitride multilayer aluminium monocrystal thin films material and nitride multilayer ti single crystal thin-film material to constitute; One gallium nitride template layer is grown on the described combined stress covariant layer, is made of monocrystalline GaN film material.
The thickness of aluminium nitride (AlN) layer is 15～90nm in the combined stress covariant layer.
In the combined stress covariant layer thickness of every layer of titanium nitride monocrystal thin films material be not more than every layer of aluminum nitride single crystal film material thickness 1/3.
The layer that contacts with sapphire substrates in combined stress covariant layer is the aluminum nitride single crystal film material.
The layer that contacts with the gallium nitride template layer in combined stress covariant layer is the aluminum nitride single crystal film material.
The number of plies of aluminum nitride single crystal film material is 2～10 layers in combined stress covariant layer.
The aluminum nitride single crystal film material is to sapphire (a-Al
2O
3) suprabasil gallium nitride (GaN) material plays the lattice mismatch stress and shift and coordinate release action, with the dislocation density that reduces gallium nitride (GaN) epitaxial material and improve the crystalline growth quality.
Each titanium nitride (TiN) layer is inserted into respectively between each aluminium nitride (AlN) layer, realizes sapphire (a-Al by regulation and control gallium nitride (GaN) template layer from the rate of temperature fall that growth temperature drops to room temperature
2O
3) basic gallium nitride (GaN) material thermal stress shifts and coordination discharges, to eliminate the stress and the bending of gallium nitride (GaN) template layer.
The thickness of gallium nitride (GaN) template layer is not less than 2 μ m, and the rate of temperature fall that drops to room temperature from 1100 ℃ growth temperature during the growing gallium nitride template layer is 5～20 ℃/minute.
Be used for preparing the AlN of combined stress covariant layer and the material growth technique of TiN monocrystal thin films material and GaN template layer includes but not limited to metal-organic chemical vapor deposition equipment (MOCVD), ion beam epitaxy (IBE), molecular beam epitaxy (MBE), pulsed laser deposition (PLD), plasma auxiliary chemical vapor deposition (PE-CVD) and magnetron sputtering deposition (MSD).
Sapphire (a-Al
2O
3) basic compound substrate can be used for gallium nitride (GaN), aluminium nitride (AlN), indium nitride (InN), aluminum gallium nitride (AlGaN), indium gallium nitrogen (InGaN), aluminium gallium nitrogen (InAlGaN) monocrystal thin films material, and the preparation growth of nitride semiconductor LED device architecture.
The present invention also provides a kind of method of making the process for sapphire-based compound substrate, and this process for sapphire-based compound substrate is used to prepare the nitride semiconductor epitaxial material, it is characterized in that, comprises: get a sapphire single-crystal substrate; Form a combined stress covariant layer in described sapphire single-crystal substrate, described combined stress covariant layer is alternately piled up by aluminum nitride single crystal film material and titanium nitride monocrystal thin films material and constitutes; Form a gallium nitride template layer on described combined stress covariant layer, described gallium nitride template layer is made of monocrystalline GaN film material.
Description of drawings
Fig. 1 is the sapphire (a-Al that is used to prepare gallium nitride (GaN) LED epitaxial wafer material
2O
3) basic compound substrate structural representation.
Embodiment
Elaborate preferred implementation of the present invention below in conjunction with accompanying drawing.
Fig. 1 is the sapphire (a-Al that is used to prepare gallium nitride (GaN) LED epitaxial wafer material
2O
3) basic compound substrate structural representation.As shown in the figure, sapphire (a-Al
2O
3) basic compound substrate 1 comprises a sapphire (a-Al
2O
3) single crystal substrates 11 and from sapphire (a-Al
2O
3) single crystal substrates 11 sides the combined stress covariant layer 12 and gallium nitride (GaN) the monocrystal thin films template layer 13 that set gradually.
Sapphire (a-Al
2O
3) single crystal substrates 11 plays a supportive role.
Combined stress covariant layer 12 covers sapphire (a-Al
2O
3) on the single crystal substrates 11, thin aluminium nitride (AlN) monocrystal thin films material 121 and multilayer 5～30nm thick ultra-thin titanium nitride (TiN) the monocrystal thin films material 122 thick by multilayer 15～90nm alternately pile up formation.As shown in Figure 1, in the combined stress covariant layer 12 with sapphire (a-Al
2O
3) layer of single crystal substrates 11 contact is preferably AlN layer 121, this is because the lattice constant and the sapphire (a-Al of AlN layer
2O
3) more approaching, can improve the effect of the alleviation lattice mismatch power of combined stress covariant layer 12 like this.Yet the present invention is not limited to situation shown in Figure 1, combined stress covariant layer and sapphire (a-Al
2O
3) layer of substrate contact also can be the TiN layer.The thickness of each TiN layer is not more than 1/3 of each AlN layer thickness.Thin AlN layer 121 is used for shifting and coordinates to discharge sapphire (a-Al
2O
3) the lattice mismatch stress that produces in epitaxial process of the gallium nitride single crystal thin-film template layer 13 (will be described later) of substrate and growth on it.Ultra-thin TiN layer 122 is used for shifting and coordinate to discharge the thermal stress that Grown GaN material on the process for sapphire-based substrate produces at temperature-fall period significantly.The preparation method of AlN layer 121 and TiN layer 122 includes but not limited to metal-organic chemical vapor deposition equipment, ion beam epitaxy, molecular beam epitaxy, pulsed laser deposition, plasma auxiliary chemical vapor deposition and magnetron sputtering deposition.
Gallium nitride (GaN) monocrystal thin films template layer 13 covers on the combined stress covariant layer 12, thickness is not less than 2 μ m, the thickness that can be by the thin AlN layer 121 in the regulation and control combined stress covariant layer 12 and the number of plies reduce the dislocation density in the GaN template layer 13, and the rate of temperature fall when thickness that also can be by ultra-thin TiN layer 122 in the regulation and control combined stress covariant layer 12 and the number of plies and control growing GaN template layer 13 is eliminated thermal stress in the GaN template layer 13 with crooked.In addition, because the lattice constant of the lattice constant of AlN layer and gallium nitride (GaN) monocrystal thin films template layer 13 is more approaching, as shown in Figure 1, the layer that contacts with gallium nitride (GaN) monocrystal thin films template layer 13 in the combined stress covariant layer 12 is preferably AlN layer 122.The preparation method of gallium nitride (GaN) monocrystal thin films template layer 13 includes but not limited to metal-organic chemical vapor deposition equipment, ion beam epitaxy, molecular beam epitaxy, pulsed laser deposition, plasma auxiliary chemical vapor deposition and magnetron sputtering deposition.
Above-mentioned three combines the sapphire (a-Al of formation
2O
3) basic compound substrate 1 can provide low-dislocation-density, unstressed and crooked homogeneity single crystalline substrate template for the preparation of follow-up nitride semiconductor epitaxial sheet material.Though it is above-mentioned with sapphire (a-Al
2O
3) basic compound substrate is used to prepare gallium nitride (GaN) for example is illustrated, yet, will be appreciated that at sapphire (a-Al
2O
3) on the basic compound substrate, can also prepare the lamination and the nitride semiconductor LED device architecture of nitride semi-conductor materials such as growing aluminum nitride, indium nitride, aluminum gallium nitride, indium gallium nitrogen, aluminium gallium nitrogen monocrystal thin films material, above-mentioned various monocrystal thin films materials.
Combined stress covariant layer among the present invention is compared existing stress covariant layer technology (comprising resilient coating, flexible layer, insert layer etc.) and is had better stress transfer and coordinate releasing effect.Be embodied in following three aspects:
1) selects for use and sapphire (a-Al
2O
3) and gallium nitride (GaN) multi-layer thin aluminium nitride (AlN) monocrystal thin films material that fine lattice match relation all arranged as the transfer of lattice mismatch stress with coordinate releasing layer.
Because thin AlN monocrystal thin films material is compared GaN monocrystal thin films material (thickness at least 2 micron thickness) and sapphire (a-Al
2O
3) thickness of single crystal substrates (thickness at least 100 micron thickness) all approaches a lot, but based on covariant substrate (Compliantsubsrates) but the stress transfer thought in covariant intermediate layer, GaN and sapphire (a-Al
2O
3) between lattice mismatch stress in the GaN of GaN template layer monocrystal thin films material growth course, can shift earlier to be assigned in the thin AlN monocrystal thin films material of each layer and coordinate release, thereby be reduced in the probability of introducing dislocation and defective in the GaN template layer, also be earlier at sapphire (a-Al even introduce dislocation
2O
3) with the introducing at the interface of AlN monocrystal thin films material, and can not produce more bad influence to top GaN template layer.Particularly, multilayer Al N and TiN overlapping structure that the present invention adopts are introduced the interface of increase and are played the upwards effect of propagation extension of the following threading dislocation of prevention again, thereby further reduced dislocation density.In more existing research work and technology, mostly adopt single thin layer AlN material or other materials to do the lattice mismatch stress transfer and coordinate releasing layer, upwards breed DeGrain aspect the extension suppressing threading dislocation.
2) select transfer and the coordination releasing layer of the ultra-thin titanium nitride of the big multilayer of thermal coefficient of expansion (TiN) monocrystal thin films material for use as thermal stress.The thermal coefficient of expansion of TiN is 9.35 * 10
-6K not only compares 5.59 * 10 of GaN
-64.15 * 10 of K and AlN
-6K is a lot of greatly, also than sapphire (a-Al
2O
3) 7.5 * 10
-6K is big, adds the GaN monocrystal thin films material and the sapphire (a-Al of ultra-thin TiN monocrystal thin films material thin in comparison AlN monocrystal thin films material, GaN template layer
2O
3) single crystal substrates all approaches a lot, but but, drop to the room temperature process because of sapphire (a-Al in the growth temperature of GaN monocrystal thin films template layer from 800～1100 ℃ based on the stress transfer thought in the covariant intermediate layer of covariant substrate
2O
3) and GaN between thermal expansion coefficient difference can produce the big thermal stress that gathers, by the regulation and control rate of temperature fall thermal stress is transferred in the ultra-thin TiN monocrystal thin films of each layer material earlier and be coordinated to discharge, and then realize that the GaN template layer is unstressed and crooked with the form of tensile stress.In addition, TiN material that the present invention selects for use and AlN material have lattice match relation preferably, the lattice mismatch of cube TiN (111) face and six side AlN (0002) faces is 3.45%, although with the lattice mismatch of six side GaN (0002) faces be-6.14%, because the TiN material is very thin, ultra-thin TiN layer is clipped between each thin AlN layer grows with the AlN coherence, thereby compares the crystalline growth quality that existing low temperature insert layer technology can not influence top GaN template layer.
3) thin AlN and the ultra-thin TiN combined stress covariant layer that alternately piles up formation had both had and compares existing stress covariant layer (comprising resilient coating, flexible layer and low temperature insert layer) better lattice mismatch stress and thermal stress shift trade-off effect, also can adopt the growth technique identical preparation successively on same equipment with the GaN template layer, therefore compare existing graph substrate technology, preparation technology is simpler also more practical.
The present invention only just can obtain low-dislocation-density and unstressed and crooked sapphire (a-Al by the thin AlN in the regulation and control combined stress covariant layer and the thickness of ultra-thin TiN layer with the number of plies and the rate of temperature fall behind the epitaxial growth GaN template layer that alternately pile up
2O
3) basic GaN compound substrate, with this kind large-sized substrate epitaxial growth GaN material and preparation LED device architecture, will certainly increase substantially the performance and the yields of the gallium nitride based LED epitaxial wafer material for preparing on the existing sapphire substrates.Therefore, be fit to very much use and marketing.
Introduce the above-mentioned sapphire (a-Al of preparation below
2O
3) preparation method of basic GaN compound substrate.Should be appreciated that preparation method described below only is preparation sapphire (a-Al of the present invention
2O
3) instantiation of basic GaN compound substrate.Those skilled in the art can make change according to design needs and other factors under instruction of the present invention.
Adopt metal-organic chemical vapor deposition equipment (MOCVD) prepared to be used for the sapphire (a-Al of nitride semiconductor epitaxial sheet material
2O
3) technological process of basic compound substrate is as follows:
Step 1: the sapphire (a-Al that gets a 2 inches diameter
2O
3) single crystal substrates 11;
Step 2: the MOCVD equipment reaction chamber is put in the sapphire single-crystal substrate 11 that will clean;
Step 3: in sapphire single-crystal substrate 11, prepare the thin AlN monocrystal thin films material 121 of growth 1 bed thickness 50nm earlier as lattice mismatch stress covariant layer with MOCVD technology;
Step 4: grow the ultra-thin TiN monocrystal thin films of 1 bed thickness 10nm material 122 as thermal stress covariant layer with the preparation on the thin AlN layer 121 of thick 50nm of MOCVD technology again;
Step 5: repeating step 3 and step 4 obtain alternately piling up the combined stress covariant layer material 12 that forms by 5 layers of thick thin AlN layer 121 and 4 layers of thick ultra-thin TiN layer 122 of 10nm of 50nm with the MOCVD prepared;
Step 6: on combined stress covariant layer material 12, prepare the thick GaN monocrystal thin films material of 1 layer of 2 μ m of growth again as GaN template layer 13 with MOCVD technology;
Step 7: the rate of temperature fall of regulation and control GaN template layer 13, drop to 750 ℃ with 10 ℃/minute rate of temperature fall from 1050 ℃ earlier, drop to 250 ℃ with 20 ℃/minute rate of temperature fall from 750 ℃ again, drop to room temperature at last naturally;
Step 8: comprise sapphire (a-Al from the taking-up of MOCVD equipment reaction chamber
2O
3) sapphire (a-Al of single crystal substrates 11, combined stress covariant layer 12, low-dislocation-density and unstressed and crooked GaN template layer 13
2O
3) basic compound substrate 1;
Step 9: with 2 inches sapphire (a-Al
2O
3) basic compound substrate 1 does GaN homogeneity single crystalline substrate template, adopts the efficient luminous basic blue-ray LED epitaxial wafer of gallium nitride (GaN) material of MOCVD prepared.
It should be noted that at last above example is only in order to technical scheme of the present invention to be described but not limit it.Although with reference to given example the present invention is had been described in detail, those of ordinary skill in the art can make amendment to technical scheme of the present invention as required or be equal to replacement, and does not break away from the spirit and scope of technical solution of the present invention.
Claims (11)
1. a process for sapphire-based compound substrate that is used to prepare the nitride semiconductor epitaxial material is characterized in that, comprises:
One sapphire single-crystal substrate;
One combined stress covariant layer covers in the described sapphire single-crystal substrate, is alternately piled up by nitride multilayer aluminium monocrystal thin films material and nitride multilayer ti single crystal thin-film material to constitute;
One gallium nitride template layer is grown on the described combined stress covariant layer, is made of monocrystalline GaN film material.
2. the process for sapphire-based compound substrate that is used to prepare the nitride semiconductor epitaxial material according to claim 1 is characterized in that, the thickness of every layer of described aluminum nitride single crystal film material is 15～90nm in the wherein said combined stress covariant layer.
3. the process for sapphire-based compound substrate that is used to prepare the nitride semiconductor epitaxial material according to claim 1, it is characterized in that, in the described combined stress covariant layer thickness of every layer of described titanium nitride monocrystal thin films material be not more than every layer of described aluminum nitride single crystal film material thickness 1/3.
4. the process for sapphire-based compound substrate that is used to prepare the nitride semiconductor epitaxial material according to claim 1 is characterized in that, the layer that contacts with described sapphire substrates in the described combined stress covariant layer is described aluminum nitride single crystal film material.
5. the process for sapphire-based compound substrate that is used to prepare the nitride semiconductor epitaxial material according to claim 1 is characterized in that, the layer that contacts with described gallium nitride template layer in the described combined stress covariant layer is described aluminum nitride single crystal film material.
6. the process for sapphire-based compound substrate that is used to prepare the nitride semiconductor epitaxial material according to claim 1 is characterized in that the number of plies of described aluminum nitride single crystal film material is 2～10 layers.
7. the process for sapphire-based compound substrate that is used to prepare the nitride semiconductor epitaxial material according to claim 1 is characterized in that the thickness of described gallium nitride template layer is not less than 2 μ m.
8. the process for sapphire-based compound substrate that is used to prepare the nitride semiconductor epitaxial material according to claim 1 is characterized in that, the rate of temperature fall that drops to room temperature from 1100 ℃ growth temperature when the described gallium nitride template layer of growth is 5～20 ℃/minute.
9. the process for sapphire-based compound substrate that is used to prepare the nitride semiconductor epitaxial material according to claim 1, it is characterized in that, be used for preparing the aluminum nitride single crystal film material of described combined stress covariant layer and the material growth technique of titanium nitride monocrystal thin films material and gallium nitride template layer comprises metal-organic chemical vapor deposition equipment, ion beam epitaxy, molecular beam epitaxy, pulsed laser deposition, plasma auxiliary chemical vapor deposition and magnetron sputtering deposition.
10. the process for sapphire-based compound substrate that is used to prepare the nitride semiconductor epitaxial material according to claim 1, it is characterized in that described process for sapphire-based compound substrate can be used for gallium nitride, aluminium nitride, indium nitride, aluminum gallium nitride, indium gallium nitrogen, aluminium gallium nitrogen monocrystal thin films material, reach the preparation growth of nitride semiconductor LED device architecture.
11. the manufacture method of a process for sapphire-based compound substrate, this process for sapphire-based compound substrate is used to prepare the nitride semiconductor epitaxial material, it is characterized in that, comprises:
Get a sapphire single-crystal substrate;
Form a combined stress covariant layer in described sapphire single-crystal substrate, described combined stress covariant layer is alternately piled up by aluminum nitride single crystal film material and titanium nitride monocrystal thin films material and constitutes;
Form a gallium nitride template layer on described combined stress covariant layer, described gallium nitride template layer is made of monocrystalline GaN film material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010156397.5A CN102208338B (en) | 2010-03-30 | 2010-03-30 | Sapphire-base compound substrate and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010156397.5A CN102208338B (en) | 2010-03-30 | 2010-03-30 | Sapphire-base compound substrate and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102208338A true CN102208338A (en) | 2011-10-05 |
| CN102208338B CN102208338B (en) | 2014-04-23 |
Family
ID=44697108
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010156397.5A Expired - Fee Related CN102208338B (en) | 2010-03-30 | 2010-03-30 | Sapphire-base compound substrate and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102208338B (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107068543A (en) * | 2012-03-21 | 2017-08-18 | 弗赖贝格化合物原料有限公司 | For preparing III N templates and its continuing the method and III N templates of processing |
| CN108106748A (en) * | 2017-11-09 | 2018-06-01 | 中国电子科技集团公司第四十八研究所 | A kind of flexibility ablation resistance film and preparation method thereof |
| CN108847436A (en) * | 2018-04-28 | 2018-11-20 | 华灿光电（浙江）有限公司 | A kind of epitaxial structure and its manufacturing method of light emitting diode |
| CN109065685A (en) * | 2018-08-20 | 2018-12-21 | 浙江大学 | A kind of sapphire compound substrate containing AlN sandwich structure |
| CN110148663A (en) * | 2019-05-16 | 2019-08-20 | 北京大学 | A kind of LED epitaxial wafer and preparation method thereof |
| CN111101204A (en) * | 2019-12-12 | 2020-05-05 | 华南师范大学 | Single crystal AlN film and preparation method and application thereof |
| CN114108087A (en) * | 2021-11-23 | 2022-03-01 | 北京工业大学 | Preparation method of orthorhombic phase tantalum pentoxide single crystal film |
| CN115341282A (en) * | 2022-09-15 | 2022-11-15 | 福建晶安光电有限公司 | Substrate modification processing method and manufacturing method of semiconductor light-emitting device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5682041A (en) * | 1992-09-14 | 1997-10-28 | Kabushiki Kaisha Toshiba | Electronic part incorporating artificial super lattice |
| US6426512B1 (en) * | 1999-03-05 | 2002-07-30 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor device |
| US6897139B2 (en) * | 2000-07-19 | 2005-05-24 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor device |
| CN201780987U (en) * | 2010-03-30 | 2011-03-30 | 杭州海鲸光电科技有限公司 | Sapphire-based composite substrate for preparing nitride semiconductor epitaxy material |
-
2010
- 2010-03-30 CN CN201010156397.5A patent/CN102208338B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5682041A (en) * | 1992-09-14 | 1997-10-28 | Kabushiki Kaisha Toshiba | Electronic part incorporating artificial super lattice |
| US6426512B1 (en) * | 1999-03-05 | 2002-07-30 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor device |
| US6897139B2 (en) * | 2000-07-19 | 2005-05-24 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor device |
| CN201780987U (en) * | 2010-03-30 | 2011-03-30 | 杭州海鲸光电科技有限公司 | Sapphire-based composite substrate for preparing nitride semiconductor epitaxy material |
Non-Patent Citations (1)
| Title |
|---|
| WAKANA HARA ETC: "Room-temperature growth of AlN/TiN epitaxial multi-layer by laser molecular beam epitaxy", 《THE SOLID FILMS》 * |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10883191B2 (en) | 2012-03-21 | 2021-01-05 | Freiberger Compound Materials Gmbh | Method for producing III-N templates and the reprocessing thereof and III-N template |
| US10584427B2 (en) | 2012-03-21 | 2020-03-10 | Freiberger Compound Materials Gmbh | Processes for producing III-N single crystals, and III-N single crystal |
| CN107068543B (en) * | 2012-03-21 | 2020-06-23 | 弗赖贝格化合物原料有限公司 | Method for producing III-N templates and further processing thereof, and III-N template |
| CN107068543A (en) * | 2012-03-21 | 2017-08-18 | 弗赖贝格化合物原料有限公司 | For preparing III N templates and its continuing the method and III N templates of processing |
| CN108106748A (en) * | 2017-11-09 | 2018-06-01 | 中国电子科技集团公司第四十八研究所 | A kind of flexibility ablation resistance film and preparation method thereof |
| CN108847436A (en) * | 2018-04-28 | 2018-11-20 | 华灿光电（浙江）有限公司 | A kind of epitaxial structure and its manufacturing method of light emitting diode |
| CN108847436B (en) * | 2018-04-28 | 2019-10-29 | 华灿光电（浙江）有限公司 | A kind of epitaxial structure and its manufacturing method of light emitting diode |
| CN109065685A (en) * | 2018-08-20 | 2018-12-21 | 浙江大学 | A kind of sapphire compound substrate containing AlN sandwich structure |
| CN110148663A (en) * | 2019-05-16 | 2019-08-20 | 北京大学 | A kind of LED epitaxial wafer and preparation method thereof |
| CN111101204A (en) * | 2019-12-12 | 2020-05-05 | 华南师范大学 | Single crystal AlN film and preparation method and application thereof |
| CN114108087A (en) * | 2021-11-23 | 2022-03-01 | 北京工业大学 | Preparation method of orthorhombic phase tantalum pentoxide single crystal film |
| CN114108087B (en) * | 2021-11-23 | 2022-11-04 | 北京工业大学 | Preparation method of orthorhombic tantalum pentoxide single-crystal film |
| CN115341282A (en) * | 2022-09-15 | 2022-11-15 | 福建晶安光电有限公司 | Substrate modification processing method and manufacturing method of semiconductor light-emitting device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102208338B (en) | 2014-04-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102208338B (en) | Sapphire-base compound substrate and manufacturing method thereof | |
| WO2021233305A1 (en) | Nitride epitaxial wafer, manufacturing method therefor, and semiconductor component | |
| US7319064B2 (en) | Nitride based semiconductor device and process for preparing the same | |
| CN113235047B (en) | Preparation method of AlN thin film | |
| CN102208337B (en) | Silicon-base compound substrate and manufacturing method thereof | |
| JP5133927B2 (en) | Compound semiconductor substrate | |
| CN102208339B (en) | Silicon-carbide-base compound substrate and manufacturing method thereof | |
| US10727054B2 (en) | Nitride-based semiconductor device and method for preparing the same | |
| CN114937721B (en) | Silicon substrate GaN-based LED epitaxial wafer and preparation method thereof | |
| JP2009283620A (en) | Group iii nitride semiconductor light emitting element, method for manufacturing thereof, and lamp | |
| JP2011082570A (en) | Method of manufacturing group iii nitride semiconductor light emitting device | |
| EP2634294B1 (en) | Method for manufacturing optical element and optical element multilayer body | |
| JPH11274560A (en) | Semiconductor element and manufacture thereof | |
| KR20040016724A (en) | Nitride semiconductor and fabrication method for thereof | |
| CN116682910B (en) | Gallium nitride epitaxial wafer structure and preparation method thereof | |
| JP2007109713A (en) | Group iii nitride semiconductor light emitting element | |
| WO2024056041A1 (en) | Epitaxial chip structure | |
| CN115295701B (en) | Silicon-based gallium nitride aluminum epitaxial wafer and preparation method thereof | |
| CN201780987U (en) | Sapphire-based composite substrate for preparing nitride semiconductor epitaxy material | |
| KR100773555B1 (en) | Semiconductor substrate having low defects and method of manufacturing the same | |
| CN115274941A (en) | Epitaxial wafer preparation method, epitaxial wafer and LED chip | |
| CN201741712U (en) | Silicon carbide based composite substrate | |
| CN201741713U (en) | Silicon-based composite substrate | |
| TWI398016B (en) | Photoelectric semiconductor device having buffer layer of iii-nitride based semiconductor and manufacturing method thereof | |
| US8026517B2 (en) | Semiconductor structures |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140423 Termination date: 20160330 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |