CN102206853A - Method for taking monocrystal bar out of monocrystal furnace - Google Patents
Method for taking monocrystal bar out of monocrystal furnace Download PDFInfo
- Publication number
- CN102206853A CN102206853A CN2011101343240A CN201110134324A CN102206853A CN 102206853 A CN102206853 A CN 102206853A CN 2011101343240 A CN2011101343240 A CN 2011101343240A CN 201110134324 A CN201110134324 A CN 201110134324A CN 102206853 A CN102206853 A CN 102206853A
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- monocrystal
- single crystal
- furnace
- furnace chamber
- crystal rod
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Abstract
The invention relates to a method for taking a monocrystal bar out of a monocrystal furnace. The method comprises the following steps of: lifting the drawn monocrystal bar to a subsidiary furnace chamber, an observing chamber and a furnace cover by a lifting head; moving the lifting head and the monocrystal bar laterally to the outer side of a main furnace chamber together with the subsidiary furnace chamber, the observing chamber and the furnace cover, and aligning a slot hole which is formed under the bottom of the main furnace chamber on one side; descending the monocrystal bar and putting the monocrystal bar below the position from the slot hole to the furnace cover; and taking the monocrystal bar out. By the method, by increasing the effective travel of drawing the monocrystal bar directly, each furnace is filled with silicon materials and the monocrystal bar is manufactured at one time; and the aims of improving the production efficiency and lowering the production cost are fulfilled.
Description
Technical field
The present invention relates to a kind of method of from single crystal growing furnace, taking out single crystal rod.
Background technology
At present, in the production process of vertical pulling method monocrystalline, the method for taking out single crystal rod from single crystal growing furnace is, the single crystal rod of drawing is risen to secondary furnace chamber after, again with single crystal rod with secondary furnace chamber outside side moves to main furnace chamber, slowly put down crystal bar then and with its taking-up.Present employed single crystal growing furnace is subjected to factory building and self design limit, and the effective stroke of pulling of crystals rod is at 1700mm, promptly can only production length less than the single crystal rod of 1700mm, if surpass 1700mm, then can not from single crystal growing furnace, take out.And the charging of the every stove of single crystal growing furnace can reach 100Kg, can reach 1950mm by the length of the single crystal rod of 100Kg, and like this, by aforesaid method manufacture order crystal bar, production efficiency and production cost directly are affected.
Summary of the invention
The purpose of this invention is to provide and to enhance productivity, a kind of method of from single crystal growing furnace, taking out single crystal rod that reduces production costs.
The technical scheme that the present invention takes is: a kind of method of taking out single crystal rod from single crystal growing furnace, it is characterized in that by lift that the single crystal rod that will draw of head rises to secondary furnace chamber, observation ward and more than the bell after, to lift again the head and single crystal rod with secondary furnace chamber, observation ward, bell outside side moves to main furnace chamber, and be aligned in the underground slotted eye that has of the main furnace chamber of side, fall single crystal rod then, single crystal rod is put into slotted eye to the following position of bell, can take out single crystal rod.
Adopt the present invention, can the silicon material of every stove be filled it up with by increasing the effective stroke of pulling of crystals rod, and the disposable single crystal rod of making, reach and enhance productivity, the purpose that reduces production costs.
Description of drawings
Fig. 1 is a synoptic diagram of the present invention.
Sequence number is represented among the figure: lift 1, secondary furnace chamber 2, observation ward 3, bell 4, main furnace chamber 5, ground 6 and slotted eye 7
Embodiment
The invention will be further described below in conjunction with specific embodiment.
With reference to figure, with every single crystal growing furnace dress silicon material 100Kg is example, after the fusing of silicon material and drawing the blow-on that finishes, by lifting 1 the single crystal rod that draws good 1950mm, rise to secondary furnace chamber 2 after, with secondary furnace chamber 2, observation ward 3, bell 4 outside side moves to main furnace chamber 5, and the slotted eye 7 that has for 6 times of the ground that is aligned in the main furnace chamber 5 of side, fall single crystal rod then, single crystal rod is put into slotted eye 7 to bell 4 following positions, can take out single crystal rod.Like this, just can reach and enhance productivity, the purpose that reduces production costs by increasing the effective stroke of pulling of crystals rod.
Claims (1)
1. method of from single crystal growing furnace, taking out single crystal rod, it is characterized in that by lift that the single crystal rod that will draw of head rises to secondary furnace chamber, observation ward and more than the bell after, to lift again the head and single crystal rod with secondary furnace chamber, observation ward, bell outside side moves to main furnace chamber, and be aligned in the underground slotted eye that has of the main furnace chamber of side, fall single crystal rod then, single crystal rod is put into slotted eye to the following position of bell, can take out single crystal rod.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101343240A CN102206853A (en) | 2011-05-20 | 2011-05-20 | Method for taking monocrystal bar out of monocrystal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101343240A CN102206853A (en) | 2011-05-20 | 2011-05-20 | Method for taking monocrystal bar out of monocrystal furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102206853A true CN102206853A (en) | 2011-10-05 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011101343240A Pending CN102206853A (en) | 2011-05-20 | 2011-05-20 | Method for taking monocrystal bar out of monocrystal furnace |
Country Status (1)
| Country | Link |
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| CN (1) | CN102206853A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103215634A (en) * | 2012-01-19 | 2013-07-24 | 宁夏日晶新能源装备股份有限公司 | Mono-crystalline furnace multifunctional crystal bar taking machine |
| CN104213190A (en) * | 2014-08-20 | 2014-12-17 | 浙江晶盛机电股份有限公司 | Mounting plate assembly for monocrystalline silicon growth furnace |
| CN107541771A (en) * | 2017-07-20 | 2018-01-05 | 上海汉虹精密机械有限公司 | The growth furnace of major diameter single crystal silicon ingot can be grown in bell and furnace tube |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002201094A (en) * | 2000-12-28 | 2002-07-16 | Shin Etsu Handotai Co Ltd | Method of manufacturing single silicon crystal |
| CN201447515U (en) * | 2009-04-20 | 2010-05-05 | 潘燕萍 | Single crystal furnace device |
| CN201648562U (en) * | 2010-05-07 | 2010-11-24 | 内蒙古晟纳吉光伏材料有限公司 | Czochralski silicon furnace device |
| CN201756594U (en) * | 2010-07-07 | 2011-03-09 | 西安理工大学 | Device for rotating furnace chamber of single crystal furnace |
-
2011
- 2011-05-20 CN CN2011101343240A patent/CN102206853A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002201094A (en) * | 2000-12-28 | 2002-07-16 | Shin Etsu Handotai Co Ltd | Method of manufacturing single silicon crystal |
| CN201447515U (en) * | 2009-04-20 | 2010-05-05 | 潘燕萍 | Single crystal furnace device |
| CN201648562U (en) * | 2010-05-07 | 2010-11-24 | 内蒙古晟纳吉光伏材料有限公司 | Czochralski silicon furnace device |
| CN201756594U (en) * | 2010-07-07 | 2011-03-09 | 西安理工大学 | Device for rotating furnace chamber of single crystal furnace |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103215634A (en) * | 2012-01-19 | 2013-07-24 | 宁夏日晶新能源装备股份有限公司 | Mono-crystalline furnace multifunctional crystal bar taking machine |
| CN104213190A (en) * | 2014-08-20 | 2014-12-17 | 浙江晶盛机电股份有限公司 | Mounting plate assembly for monocrystalline silicon growth furnace |
| CN107541771A (en) * | 2017-07-20 | 2018-01-05 | 上海汉虹精密机械有限公司 | The growth furnace of major diameter single crystal silicon ingot can be grown in bell and furnace tube |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20111005 |