CN102205400A - Process for preparing ingot for semiconductor target by using distribution device - Google Patents
Process for preparing ingot for semiconductor target by using distribution device Download PDFInfo
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- CN102205400A CN102205400A CN2011101328363A CN201110132836A CN102205400A CN 102205400 A CN102205400 A CN 102205400A CN 2011101328363 A CN2011101328363 A CN 2011101328363A CN 201110132836 A CN201110132836 A CN 201110132836A CN 102205400 A CN102205400 A CN 102205400A
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Abstract
The invention discloses a process for preparing an ingot for a semiconductor target by using a distribution device. The process comprises the following steps of: providing parent metal, and placing the parent metal in a vacuum smelting furnace; melting the parent metal in the vacuum smelting furnace; sampling the molten metal and analyzing a product; injecting the molten metal which is subjected to product analysis and meets the product requirement into a plurality of vertical crystallizers by a pouring gate and a distributor, wherein the distributor comprises an inlet and a plurality of outlets, and the plurality of outlets of the distributor correspond to the plurality of vertical crystallizers respectively; and performing continuous casting on the molten metal to form a target casting. By the process for preparing the ingot for the semiconductor target by using the distribution device, the quality of the casting is improved, and the production efficiency of the target casting is greatly improved.
Description
Technical field
The present invention relates to casting field, relate in particular to a kind of preparation technology who uses ingot casting with the semiconductor target of distributor.
Background technology
Semiconductor target ingot casting is the material as target, and for example pulsed laser deposition or electron beam deposition be with in the film forming technology, and the semiconductor target has key effect with the quality of ingot casting to the quality of deposit film.
The semiconductor target has multiple with ultra-pure aluminum, common have materials such as fine aluminium, aluminium copper, Al-Si-Cu alloy, alusil alloy, though alloying component content is had nothing in common with each other, but require all very high to purity and solid impurity, half purity requirement must not be lower than 99.999%, and does not allow the existence of solid impurity.
The preparation technology of the ultra-pure aluminum that the semiconductor target is used in the prior art is: the ultra-pure aluminum liquid after the vacuum melting flows into single mold through chute, finish a mold after, adjust inlet by operating personnel again, continue the casting of second, third root ingot casting.Prior art is higher relatively to operators'skills control requirement, and casting process is longer relatively, and quality of ingot aluminum is relatively poor relatively, and the purity of aluminium ingot generally can only influence the yield of semiconductor target about 99.8%.And produce in batches to need a large amount of ingot castings, adopt this kind mode to prepare that the production efficiency of ultra-pure aluminum is low, the production cycle long, the power consumption is higher relatively.
Publication number discloses a kind of " preparation method of ingot material for target material production " for the Chinese patent of " CN101704076A ", in running channel, be provided with at least one filter screen, removed a part of impurity, but the effect for the quality performance that improves ingot casting is limited, and does not improve and produce the production efficiency of semiconductor target with ingot casting.
Summary of the invention
The problem that embodiments of the invention solve provides the preparation technology of the semiconductor target of the high band distributor of a kind of production efficiency with ingot casting.
For addressing the above problem, embodiments of the invention provide the preparation technology of a kind of semiconductor target with distributor with ingot casting, comprising:
The metal mother metal is provided, described mother metal is placed vacuum melting furnace;
With the metal mother metal fusion in the described vacuum melting furnace;
To melt metal sampling, carry out the goods analysis;
It is characterized in that, also comprise:
To inject a plurality of perpendicular shape crystallizers by running channel and distributor through the motlten metal that meets product requirement after the goods analysis, described distributor comprises an import and a plurality of outlet, and a plurality of outlets of described distributor are corresponding with a plurality of perpendicular shape crystallizers respectively;
Described motlten metal is cast continuously, form the target foundry goods.
Alternatively, described metal mother metal is a primary aluminum.
Alternatively, the outlet of described distributor is 2～10, and the diameter of the outlet of described distributor is 0～50 centimetre.
Alternatively, the material of described distributor is the high metal of fusing point, SiO
2Or Al
2O
3In a kind of.
Alternatively, the semiconductor target of the band distributor of the embodiment of the invention also comprises with the preparation technology of ingot casting: before the sampling of described melt metal, and at the oxide-film of removing the mother metal surface, and to the processing that outgases of melt metal.
Alternatively, the semiconductor target of the band distributor of the embodiment of the invention also comprises with the preparation technology of ingot casting: the target foundry goods after tripping out is carried out finished product detection; Filter out the target that meets product requirement, with the described target packing that meets product requirement, shipment.
Alternatively, described finished product detection comprises visual examination, cuts weighing and planned sampling analysis per sample.
Alternatively, described semiconductor target uses the purity of ingot casting more than or equal to 99.999%.
Alternatively, also comprise: short running channel, described short running channel links to each other with the exit of described distributor, described short running channel from the distance of the bottom of erecting the shape crystallizer less than 60 centimetres.
Alternatively, the outlet of described a plurality of distributors, equating with angle between the short running channel that described outlet links to each other, the outlet of described distributor, is 120 °～180 ° with angle between the short running channel that described outlet links to each other.
Compared with prior art, embodiments of the invention have the following advantages:
Embodiments of the invention have adopted the distributor of an import, a plurality of outlets, a plurality of outlets of described distributor correspond respectively to the inlet of a plurality of perpendicular shape crystallizers, make metal mother metal after the vacuum melting, behind running channel, sieve and distributor, be injected into fast with each perpendicular shape crystallizer in, cast continuously.The semiconductor target of the band distributor of embodiments of the invention can be finished a plurality of continuous castings simultaneously with the preparation technology of ingot casting in the short time, improved the production efficiency of semiconductor target with ingot casting greatly.
Further, embodiments of the invention have adopted the distributor with a plurality of outlets, and the outlet of described distributor is poured into a mould a plurality of perpendicular shape crystallizers by short running channel, and splashing of generation is less, and metallic solution is difficult for producing impurity, it is oxidized to be difficult for; And when pouring into a mould a plurality of perpendicular shape crystallizers at the same time and forming a plurality of ingot casting, can judge whether the preparation technology that the semiconductor target is used has problems by the quality of more described a plurality of ingot castings, and judge the in-problem concrete link of preparation technology, saved the time of maintenance greatly.
Further, because the production semiconductor target of embodiments of the invention is short with the time of ingot casting, pour the required time weak point of metallic solution in the vacuum melting furnace, the controllability height of casting environment, the quality stability height of ingot casting.
Description of drawings
Fig. 1 is preparation technology's schematic flow sheet that the semiconductor target of the band distributor of the embodiment of the invention is used ingot casting;
Fig. 2 is the schematic diagram that the semiconductor target of the band distributor of one embodiment of the invention is used the preparation system of ingot casting;
Fig. 3 is the cross-sectional view of the distributor of the embodiment of the invention.
The specific embodiment
Just as described in the background section, the ingot casting that the semiconductor target that adopts prior art is produced with the preparation technology of ingot casting second-rate, production efficiency is low.The inventor of the embodiment of the invention finds that prior art needs to adjust inlet again after finishing a casting, continue the casting of second, third root ingot casting.Because aluminium liquid is exposed in the air for a long time, contact with oxygen, produce oxide-film and import ingot casting, directly influence ingot quality; Easily some particulates in the entrained air in the ingot casting process, form shrinkage cavity defect easily; And the semiconductor target of prior art is low with the preparation technology's of ingot casting production efficiency.
At the problems referred to above, the inventor of the embodiment of the invention is through discovering, can use the distributor with an import, a plurality of outlets in the preparation technology of ingot casting at the semiconductor target, the quality that improves ingot casting with enhance productivity.
Inventor through the research back embodiment of the invention finds, described distributor with a plurality of outlets can be designed to movable in the preparation technology of semiconductor target with ingot casting and two kinds of fixing.Become to move as if the dispenser designs that will have a plurality of outlets, for example rotatable distributor, an outlet of described distributor is corresponding to a perpendicular shape crystallizer, after this outlet of distributor pours a perpendicular shape crystallizer, the distributor rotation, make that the next one outlet of described distributor is corresponding with another perpendicular shape crystallizer, thereby realize continuous pouring.Though this kind semiconductor target has reduced operators'skills control requirement with the preparation technology of ingot casting, motlten metal is exposed to the airborne time and reduces, and has improved the quality of ingot casting to a certain extent.But the preparation technology's that this kind semiconductor target is used metallic solution directly is poured into perpendicular shape crystallizer from the outlet of distributor, be easy to generate and splash, oxidized formation impurity, the quality stability of described ingot casting is still waiting to improve, and once can only pour into a mould a perpendicular shape crystallizer, the production efficiency of ingot casting is lower.
Therefore, the present inventor finds after further research, use among the preparation technology at the semiconductor target, dispenser designs with a plurality of outlets can be become fix, each outlet of described distributor is corresponding to a perpendicular shape crystallizer, can realize the cast of a plurality of ingot castings simultaneously, significantly improve production efficiency; And be connected with short running channel in the exit of distributor, described short running channel is from the close together of perpendicular shape crystallizer bottom, and metallic solution is flowed through and entered perpendicular shape crystallizer behind distributor and the short running channel, and difficult generation is splashed, and the quality stability of the ingot casting of formation is better.
For above-mentioned purpose, the feature and advantage that make the embodiment of the invention can become apparent more, the specific embodiment of the present invention is described in detail below in conjunction with accompanying drawing.
A lot of details have been set forth in the following description so that fully understand embodiments of the invention, but embodiments of the invention can also adopt other to be different from alternate manner described here and implement, so embodiments of the invention are not subjected to the restriction of following public specific embodiment.
Below in conjunction with accompanying drawing the specific embodiment of the present invention is described in detail.
With reference to figure 1, embodiments of the invention provide the preparation technology of a kind of semiconductor target with distributor with ingot casting, comprising:
Step S101 provides the metal mother metal, and described metal mother metal is placed vacuum melting furnace;
Step S103 is with the metal mother metal fusion in the described vacuum melting furnace;
Step S105 to melt metal sampling, carries out the goods analysis;
Step S107, to inject a plurality of perpendicular shape crystallizers by running channel and distributor through the motlten metal that meets product requirement after the goods analysis, described distributor comprises an import and a plurality of outlet, and a plurality of outlets of described distributor are corresponding with a plurality of perpendicular shape crystallizers respectively;
Step S109 casts described motlten metal continuously, forms the target foundry goods.
Under regard to above-mentioned example procedure and be elaborated.Please refer to Fig. 2, Fig. 2 shows the semiconductor target of band distributor of one embodiment of the invention with the schematic diagram of the preparation system of ingot casting.
At first, execution in step S101 provides the metal mother metal, and described metal mother metal is placed vacuum melting furnace 201.In an embodiment of the present invention, be that example describes to prepare semiconductor target foundry goods as the metal mother metal with primary aluminum.Specifically comprise: it is the primary aluminum of 4N5 (99.995%) or 5N5 (99.9995%) that purity is provided; Described primary aluminum is weighed; And the described primary aluminum after will weighing places vacuum melting furnace 201.
Then, execution in step S103 is with the metal mother metal fusion in the described vacuum melting furnace 201.In an embodiment of the present invention, owing to be as mother metal with primary aluminum, the needed temperature of fusion primary aluminum at least will be more than 600 ℃, therefore, the required main technologic parameters of the described primary aluminum of fusion in described vacuum melting furnace 201, for example the scope of operating temperature is 600 ℃ to 1000 ℃, and pressure is that 0.01 holder is to 1.00 holders (1 holder=1 millimetres of mercury ≈, 133.32237 handkerchiefs).
For the quality of the fusion of guaranteeing primary aluminum, in an embodiment of the present invention, in described vacuum melting furnace 201, carry out in the process of fusion primary aluminum, also comprise and add protium and boron element.Wherein, boron element (for example boron chloride) can be used for removing nitride, carbide and oxide with the refining primary aluminum from molten aluminum liquid, improves the aluminium casting quality.
And in the process of fusion primary aluminum, also need described vacuum melting furnace 201 is bled, to reduce the probability that gas in the described vacuum melting furnace and molten aluminum liquid react.Therefore in fusion, bleed, make that hydrogen and/or the oxygen in the described vacuum melting furnace 201 is controlled in the admissible scope.
Afterwards, execution in step S105 to melt metal sampling, carries out the goods analysis.
Owing to contacting with gas in the described vacuum melting furnace 201, the surface of molten aluminum liquid is easy to generate oxide, form layer oxide film on the molten aluminum liquid surface, the aluminium casting that is unfavorable for follow-up formation high-purity or ultra-high purity, so before described goods are analyzed, also need to remove the oxide-film on motlten metal mother metal surface in the vacuum melting furnace 201.In the present embodiment, the oxide of molten metal surface can be realized by special-purpose removal device in the described removal vacuum melting furnace 201, and described removal device can for example adopt the oxide removal of mode such as peel off, brush with described molten aluminum liquid surface.
And if could control the content of each gas in the molten aluminum liquid, the quality of aluminium casting would just have substantial improvement.For example, general, primary aluminum absorbs hydrogen and/or oxygen when liquid state, as not removing internal flaws such as will producing pore in the aluminium casting of subsequent preparation.Therefore, before described goods are analyzed, also need to add degasser, part is removed the gas in the molten aluminum liquid, reduces the content of each gas, adds degasser, to the processing that outgases of described motlten metal.
After the processing that outgases, need remove the oxide-film on the mother metal surface of fusion in the vacuum melting furnace 201 again, improve the purity of the target of follow-up formation with ingot casting.
In an embodiment of the present invention, then, carry out the goods analysis to melt metal sampling.In the present embodiment, step S105 specifically comprises: the different parts from described molten aluminum liquid is gathered the aluminium fluid samples; Respectively described each aluminium fluid samples is analyzed, described analysis comprises impurity analysis and gas composition analysis.By the goods analysis, not only can check out the kind and the content thereof of kind and the content and the gas componant of impurity in the described molten aluminum liquid, can check out the uniformity of described molten aluminum liquid whether to meet product requirement in addition.For example,, promptly show the inhomogeneous of described molten aluminum liquid, then can continue molten aluminum liquid measure such as is taked for example to stir so that it reaches even if it is inconsistent to check out each aluminium fluid samples to exist.
Then, execution in step S107, to inject a plurality of perpendicular shape crystallizers 2091,2092,2093,2094 by running channel 203, sieve 205 and distributor 207 through the motlten metal that meets product requirement after the goods analysis, described distributor 207 comprises an import 2070 and a plurality of outlet 2071,2072,2073,2074, and a plurality of outlets 2071,2072,2073,2074 of described distributor are corresponding with a plurality of perpendicular shape crystallizer 2091,2092,2093,2094 respectively.
Described sieve 205 can be used for the oxide and the impurity of elimination motlten metal, and described distributor 207 is used for motlten metal is assigned to different perpendicular shape crystallizers.
Please refer to Fig. 3, Fig. 3 shows the cross-sectional view of the distributor 207 of the embodiment of the invention.Described distributor comprises an import 2070 and four outlets 2071,2072,2073,2074.Described each outlet is used for motlten metal is injected into different perpendicular shape crystallizers corresponding to a perpendicular shape crystallizer.For example first outlet 2071 is erected shape crystallizer 2092 corresponding to first perpendicular shape crystallizer 2091, the second outlets 2072 corresponding to second, and the like.Adopt distributor 207 at the semiconductor target in the preparation technology of ingot casting with a plurality of outlets, can pour into a mould a plurality of perpendicular shape crystallizers simultaneously, form a plurality of ingot castings, improved production efficiency greatly, and adopt the preparation technology of the embodiment of the invention, pour the required time weak point of metallic solution in the vacuum melting furnace, the controllability height of casting environment, the quality stability height of ingot casting.
If the outlet of distributor 207 is too much, the technology of making distributor 207 is complicated more, and each outlet promptly means the more perpendicular shape crystallizer of needs, place that need be bigger corresponding to a perpendicular shape crystallizer.Therefore, consider the complexity of the technology of making the distributor 207 with a plurality of outlets and the restriction in place, the outlet of common described distributor 207 is 2～10, and the diameter of described outlet is 0～50 centimetre.
The motlten metal of considering the distributor 207 of flowing through has higher temperature, if distributor 207 adopts the lower material of fusing points to make, then is melted easily or deforms.Therefore, in an embodiment of the present invention, the material of described distributor 207 is the material that fusing point is higher than molten metal temperature, for example the metal that fusing point is high, SiO
2Or Al
2O
3In a kind of.
Consider that the motlten metal that flows out from the outlet of distributor directly is poured into perpendicular shape crystallizer, be easy to generate and splash, cause the oxidized generation impurity of motlten metal part, have influence on the quality of the ingot casting of follow-up formation, therefore, please continue with reference to figure 2, the outlet of described distributor 207 links to each other with short running channel, the diameter of described short running channel is corresponding with the diameter of described outlet, be 0～50 centimetre, described short running channel is less from the distance of the bottom of perpendicular shape crystallizer, less than 60 centimetres, difficult generation is splashed, and described motlten metal is difficult for oxidized generation impurity.In an embodiment of the present invention, particularly, described outlet 2071 links to each other with short running channel 2081, and described outlet 2072 links to each other with short running channel 2082, and described outlet 2073 links to each other with short running channel 2083, and described outlet 2074 links to each other with short running channel 2084.
Consider the uniformity that motlten metal flows in addition, the outlet of described a plurality of distributors, equal with angle between the short running channel that described outlet links to each other.The inventor of the embodiment of the invention finds through the research back, when the outlet of distributor, with short running channel that described outlet links to each other between angle when being 120 °～180 °, molten metal flow is good.In an embodiment of the present invention, the outlet of described distributor, be 150 ° with angle between the short running channel that described outlet links to each other, this moment, molten metal flow was better.
At last, execution in step S109 casts described motlten metal continuously, forms the target foundry goods.
To cast described motlten metal continuously carries out in perpendicular shape crystallizer.Described perpendicular type crystallizer is as " heart " of continuous casting, molten aluminum liquid is cooled in perpendicular type crystallizer and tentatively is frozen into certain thickness aluminium casting, and pulled out from the end opening (indicating) that erects the type crystallizer continuously, cooled off by for example types of cooling such as water spray or spraying steam again, make aluminium casting solidify fully and moulding.
The present inventor finds, the preparation technology that the semiconductor target of the band distributor of the embodiment of the invention is used, because pouring into a mould a plurality of perpendicular shape crystallizers simultaneously forms a plurality of ingot castings, if the quality of some ingot casting goes wrong, can judge whether the preparation technology that the semiconductor target is used has problems by the quality of more described a plurality of ingot castings, and judge the in-problem concrete link of preparation technology, saved the repair time greatly.For example in an embodiment of the present invention, if first ingot quality that is formed by perpendicular shape crystallizer 2091 has problems, and perpendicular shape crystallizer 2092,2093, second ingot casting that forms in 2094, the 3rd ingot casting, the 4th ingot quality is stable, just can draw the preparation technology's that the semiconductor target of the band distributor of the embodiment of the invention uses vacuum melting furnace, running channel, the technology of these links of sieve does not have problems, be the outlet 2071 of distributor and the link existing problems between the short running channel 2081, only need improve with short running channel 2081 and get final product export distributor 2071, and do not need the inspection of link one by one, saved the repair time among the preparation technology.
In addition, in the production process of continuous casting, the liquid level control of motlten metal is one of most important technological operation in the perpendicular type crystallizer, it all plays a part crucial for improving aluminium casting quality and steady production process, the quality of liquid level control will directly influence the quality of aluminium casting, therefore, in the present embodiment, the liquid level control mode of described perpendicular type crystallizer is a float-type liquid level control mode, for example can obtain preferable liquid level effect by the height of control float in the production process of continuous casting.
Need to prove that the preparation technology with ingot casting also comprises at the semiconductor target of the band distributor of embodiments of the invention: the target foundry goods after tripping out is carried out finished product detection; Filter out the target that meets product requirement, with the described target packing that meets product requirement, shipment.
Described finished product detection comprises visual examination, cuts weighing and planned sampling analysis per sample.In an embodiment of the present invention, adopt semiconductor target that above-mentioned preparation technology makes to learn that the purity of described ingot casting is more than or equal to 99.999% after after testing with ingot casting.
To sum up, embodiments of the invention have adopted the distributor of an import, a plurality of outlets, a plurality of outlets of described distributor correspond respectively to the inlet of a plurality of perpendicular shape crystallizers, make metal mother metal after the vacuum melting, behind running channel, sieve and distributor, be injected into fast with each perpendicular shape crystallizer in, cast continuously.The semiconductor target of the band distributor of embodiments of the invention can be finished a plurality of continuous castings simultaneously with the preparation technology of ingot casting in the short time, improved the production efficiency of semiconductor target with ingot casting greatly.
Further, embodiments of the invention have adopted the distributor with a plurality of outlets, and the outlet of described distributor is poured into a mould a plurality of perpendicular shape crystallizers by short running channel, and splashing of generation is less, and metallic solution is difficult for producing impurity, it is oxidized to be difficult for; And when pouring into a mould a plurality of perpendicular shape crystallizers at the same time and forming a plurality of ingot casting, can judge whether the preparation technology that the semiconductor target is used has problems by the quality of more described a plurality of ingot castings, and judge the in-problem concrete link of preparation technology, saved the time of maintenance greatly.
Further, because the production semiconductor target of embodiments of the invention is short with the time of ingot casting, pour the required time weak point of metallic solution in the vacuum melting furnace, the controllability height of casting environment, the quality stability height of ingot casting.
Though the present invention with preferred embodiment openly as above; but it is not to be used for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can utilize the method and the technology contents of above-mentioned announcement that technical solution of the present invention is made possible change and modification; therefore; every content that does not break away from technical solution of the present invention; to any simple modification, equivalent variations and modification that above embodiment did, all belong to the protection domain of technical solution of the present invention according to technical spirit of the present invention.
Claims (10)
1. one kind with the semiconductor target of the distributor preparation technology with ingot casting, comprising:
The metal mother metal is provided, described mother metal is placed vacuum melting furnace;
With the metal mother metal fusion in the described vacuum melting furnace;
To melt metal sampling, carry out the goods analysis;
It is characterized in that, also comprise:
To inject a plurality of perpendicular shape crystallizers by running channel and distributor through the motlten metal that meets product requirement after the goods analysis, described distributor comprises an import and a plurality of outlet, and a plurality of outlets of described distributor are corresponding with a plurality of perpendicular shape crystallizers respectively;
Described motlten metal is cast continuously, form the target foundry goods.
2. the semiconductor target of band distributor as claimed in claim 1 is characterized in that with the preparation technology of ingot casting described metal mother metal is a primary aluminum.
3. the semiconductor target of band distributor as claimed in claim 1 is characterized in that with the preparation technology of ingot casting the outlet of described distributor is 2～10, and the diameter of the outlet of described distributor is 0～50 centimetre.
4. the semiconductor target of band distributor as claimed in claim 1 is characterized in that with the preparation technology of ingot casting the material of described distributor is the high metal of fusing point, SiO
2Or Al
2O
3In a kind of.
5. the semiconductor target of band distributor as claimed in claim 1 is characterized in that with the preparation technology of ingot casting, also comprises: before the described sampling of melt metal, and at the oxide-film of removing the mother metal surface, and to the processing that outgases of melt metal.
6. the semiconductor target of band distributor as claimed in claim 1 is characterized in that with the preparation technology of ingot casting, also comprises: the target foundry goods after tripping out is carried out finished product detection; Filter out the target that meets product requirement, with the described target packing that meets product requirement, shipment.
7. the semiconductor target of band distributor as claimed in claim 6 is characterized in that with the preparation technology of ingot casting described finished product detection comprises visual examination, cuts weighing and planned sampling analysis per sample.
8. the semiconductor target of band distributor as claimed in claim 1 is characterized in that with the preparation technology of ingot casting described semiconductor target uses the purity of ingot casting more than or equal to 99.999%.
9. the semiconductor target of the band distributor as claimed in claim 1 preparation technology of ingot casting, it is characterized in that, also comprise: short running channel, described short running channel links to each other with the exit of described distributor, described short running channel from the distance of the bottom of erecting the shape crystallizer less than 60 centimetres.
10. the semiconductor target of the band distributor as claimed in claim 9 preparation technology of ingot casting, it is characterized in that, the outlet of described a plurality of distributors, equating with angle between the short running channel that described outlet links to each other, the outlet of described distributor, is 120 °～180 ° with angle between the short running channel that described outlet links to each other.
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| CN2011101328363A CN102205400A (en) | 2011-05-20 | 2011-05-20 | Process for preparing ingot for semiconductor target by using distribution device |
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| CN2011101328363A CN102205400A (en) | 2011-05-20 | 2011-05-20 | Process for preparing ingot for semiconductor target by using distribution device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104342562A (en) * | 2013-07-31 | 2015-02-11 | 宁波创润新材料有限公司 | Aluminum alloy casting method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2159839Y (en) * | 1992-08-21 | 1994-03-30 | 林赐安 | Casting mould head for stainless steel golf ball head |
| CN101704076A (en) * | 2009-12-03 | 2010-05-12 | 宁波江丰电子材料有限公司 | Preparation method of ingot material for target material production |
-
2011
- 2011-05-20 CN CN2011101328363A patent/CN102205400A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2159839Y (en) * | 1992-08-21 | 1994-03-30 | 林赐安 | Casting mould head for stainless steel golf ball head |
| CN101704076A (en) * | 2009-12-03 | 2010-05-12 | 宁波江丰电子材料有限公司 | Preparation method of ingot material for target material production |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104342562A (en) * | 2013-07-31 | 2015-02-11 | 宁波创润新材料有限公司 | Aluminum alloy casting method |
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Application publication date: 20111005 |