CN102203677B - Exposure unit and method for exposing substrate - Google Patents

Exposure unit and method for exposing substrate Download PDF

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Publication number
CN102203677B
CN102203677B CN2010800023874A CN201080002387A CN102203677B CN 102203677 B CN102203677 B CN 102203677B CN 2010800023874 A CN2010800023874 A CN 2010800023874A CN 201080002387 A CN201080002387 A CN 201080002387A CN 102203677 B CN102203677 B CN 102203677B
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China
Prior art keywords
substrate
binding domain
exposure
maintaining part
mask
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CN2010800023874A
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CN102203677A (en
Inventor
池渊宏
户川悟
永井新一郎
桐生恭孝
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Vn Systems Ltd
V Technology Co Ltd
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NSK Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

Each of the suction surfaces (22) of work chucks (21) has: partitioning walls (81a-81d, 82a-82d, 83a-83d), which are formed so as to partition adjacent suction regions (80a-80g), and which can abut on the rear surface of a substrate (W); and a plurality of protruding sections (85), which can abut on the rear surface of the substrate (W) in the suction regions (80a-80g), respectively. The suction surfaces (22) of the work chucks (21) of a plurality of exposure apparatus main bodies (2-5) have substantially the same outer dimension, and the partitioning walls (81a-81d, 82a-82d, 83a-83d) of the work chucks (21) are formed at positions that differ by each of the exposure apparatus main bodies (2-5).

Description

The exposure method of exposure device and substrate
Technical field
The present invention relates to a kind of the possess exposure device of a plurality of exposure device main bodys and the exposure method of substrate.
Background technology
In the past, multiple filter substrate for the manufacture of panel display apparatus such as liquid crystal indicator or plasma display systems or TFT (thin film transistor (TFT): the Thin Film Transistor) exposure device of substrate had been proposed.Exposure device passes through to keep mask with the mask maintaining part, and keeps substrate to make both closely arranged opposite with the substrate maintaining part.Then, by the light from mask side irradiation pattern exposure use, the mask pattern exposure that is depicted on mask is transferred on substrate.In addition, for example, in the situation that make filter substrate, use 4 exposure device main bodys, BM (black matrix) layer, R (red), G (green), these 3 dyed layers of B (indigo plant) in turn expose on substrate.
In patent documentation 1,2 described exposure devices, the substrate maintaining part keeps having a plurality of projections (embossing) on the adsorption plane of substrate in absorption, and divides separated partition for delimiting the binding domain that a plurality of binding domains have adjacency.And, by the interval between the projection of the interval of the projection of prescribed direction and partition and institute's adjacency being set as the width of regulation, make the deflection of substrate about equally, improve the flatness of substrate, thereby it is uneven to suppress exposure.In addition, in the described substrate maintaining part of patent documentation 3, possess and surround the edge part that attracts the space, be located at a plurality of projections that attract in the space and the support that extends from edge part towards projection, so that with good flatness maintenance substrate.
Patent documentation 1:JP-A-2009-212344
Patent documentation 2:JP-A-2009-198641
No. 3:WO2006/025341, patent documentation
, at the internal circulation of substrate maintaining part, cooling medium is arranged for cooling base, when absorption kept substrate in the substrate maintaining part, on a plurality of projections or the partition part that contacts and the part that does not contact, substrate produced temperature variation.Particularly, the part that contacts with continuous partition at substrate, large with respect to the temperature variation of contact portion not, might with substrate that partition contacts near produce microdeformation.Therefore, when using a plurality of exposure device main bodys to carry out a plurality of exposure, if the position of the part that partition contacts is consistent in each exposure device main body, there is the problem that the uneven or profile variation of exposing of exposure occurs on this position of the goods of a plurality of exposures.In addition, in the described substrate maintaining part of patent documentation 1～3, the problems referred to above are not considered fully.
Summary of the invention
The present invention completes for addressing the above problem, even its purpose is to provide a kind of goods that carry out multiexposure, multiple exposure, also can suppress the exposure inequality and the exposure device of the generation of exposure profile (profile) deviation and the exposure method of substrate that are caused by partition.
According to the embodiment of the present invention, can provide a kind of pattern with a plurality of described each masks to expose successively to be transferred in the exposure device on described substrate, wherein, described exposure device possesses by shining described exposure light the pattern exposure of described mask is transferred in a plurality of exposure device main bodys on described substrate, and described exposure device main body possesses: keep having the mask of described pattern the mask maintaining part, have by absorption and keep the substrate maintaining part of adsorption plane of described substrate and the irradiation section of shining exposure light; On the adsorption plane of described substrate maintaining part, a plurality of projections that are provided with the partition that forms for the binding domain of separating adjacency and can connect with the back side of described substrate, can connect with the back side of described substrate at described binding domain; The adsorption plane of each substrate maintaining part of described a plurality of exposure device main bodys has roughly the same physical dimension, and the partition of described each substrate maintaining part is formed on different positions in each described exposure device main body.
according to the embodiment of the present invention, can provide a kind of employing by shining described exposure light, the pattern exposure of described each mask to be transferred in a plurality of exposure device main bodys on described substrate, the pattern of described each mask is exposed successively be transferred in the exposure method of the substrate on described substrate, described exposure device main body possesses for the mask maintaining part that keeps the figuratum mask of tool, have the substrate maintaining part and the irradiation section of shining exposure light that keep the adsorption plane of described substrate by absorption, described exposure method comprises following operation: so that with the separated partition of binding domain of described adsorption plane institute adjacency in described each exposure device main body on different positions with the back side of the described substrate mode that connects, by described a plurality of exposure device main bodys, described substrate is exposed successively.
The invention effect
According to exposure device of the present invention, due to the partition on each adsorption plane that is formed at a plurality of exposure device main bodys, be formed on different positions in each exposure device main body, therefore even carried out the goods of multiexposure, multiple exposure, also can suppress the generation of the uneven or exposure profile variation of exposure that partition causes.
In addition, exposure method according to substrate of the present invention, substrate is because each partition connects with the back side of substrate on different positions in each exposure device main body, exposed successively by a plurality of exposure main bodys simultaneously, even therefore completed the goods of multiexposure, multiple exposure, also can suppress to occur exposure inequality or the exposure profile variation that partition causes.
Description of drawings
Fig. 1 means the schematic diagram of the exposure device of the first embodiment of the present invention.
Fig. 2 is for the exploded stereographic map near (formula) exposure main body of application in the exposure device of Fig. 1.
Fig. 3 is the front view near (formula) exposure device main body shown in Figure 2.
Fig. 4 is the amplification stereogram of mask maintaining part shown in Figure 2.
(a) of Fig. 5 is the front view of substrate maintaining part shown in Figure 1, is (b) the V section enlarged drawing of (a).
Fig. 6 is with each enlarged drawing that illustrates overlappingly near the substrate maintaining part VIa-VId section of (formula) exposure device main body in Fig. 1.
Fig. 7 (a)～(h) means the figure of the various variation of projection and partition.
Fig. 8 (a)～(i) is the figure of the various variation of partition.
Fig. 9 means the schematic diagram of the exposure device of the second embodiment of the present invention.
Figure 10 is for the exploded stereographic map near exposure main body of application in the exposure device of Fig. 9.
Figure 11 is the front view near the exposure device main body shown in Figure 10.
Figure 12 is the amplification stereogram of mask maintaining part shown in Figure 10.
Figure 13 is the front view of substrate maintaining part shown in Figure 9.
(A) of Figure 14 is the A section enlarged drawing of Figure 13, is (B) the B section enlarged drawing of Figure 13, is (C) the C section enlarged drawing of Figure 13, is (D) the D section enlarged drawing of Figure 13.
Figure 15 disposes the figure of substrate in the front view of substrate maintaining part shown in Figure 9.
Figure 16 (A)～(D) means the figure of the adsorbed state of the substrate when the substrate step moves.
Figure 17 (A)～(B) means the figure that disposes the state of diverse substrate in the front view of substrate maintaining part shown in Figure 9.
Description of reference numerals
the 1-exposure device, 2-first is near (formula) exposure device main body, 3-second is near the exposure device main body, 4-the 3rd is near the exposure device main body, 5-the 4th is near the exposure device main body, 10-mask maintaining part, the 12b-opening, the 14-chuck segment, 20-substrate maintaining part, the 21-workpiece chuck, the 22-adsorption plane, 80a-the first binding domain, 80b-the second binding domain, 80c-the 3rd binding domain, 80d-the 4th binding domain, 80e-the 5th binding domain, 80f-the 6th binding domain, 80g-the 7th binding domain, 81a, 81b, 81c, 81d-the first partition, 82a, 82b, 82c, 82d-the second partition, 83a, 83b, 83c, 83d-the 3rd partition, 800a-the first binding domain, 800b-the second binding domain, 800c-the 3rd binding domain, 800d-the 4th binding domain, 800e-the 5th binding domain, 800f-the 6th binding domain, 800g-the 7th binding domain, 800h-the 8th binding domain, 800i-the 9th binding domain, 800j-the tenth binding domain, 800k-the 11 binding domain, 800l-the 12 binding domain, 800m-the 13 binding domain, 810a-the first partition, 810b-the second partition, 810c-the 3rd partition, 810d-the 4th partition, 810e-the 5th partition, 810f-the 6th partition, 810g-the 7th partition, 810h-the 8th partition, 810i-the 9th partition, partition around 810j-the tenth, partition around 810k-the 11, partition around 810l-the 12, partition around 810m-the 13, the M-mask, W-glass substrate (being exposed material).
Embodiment
[the first embodiment]
Below, based on accompanying drawing, the exposure device of the first embodiment of the present invention and the exposure method of substrate are elaborated.
As shown in Figure 1, exposure device 1 of the present invention possesses: to ground floor expose first near (formula) exposure device main body 2, to the second layer expose second approach exposure main body 3, to the 3rd layer expose the 3rd near exposure device main body 4 and to the 4th layer expose the 4th near exposure device main body 5.In addition, the diagram of the device that uses in the pre-service such as coating, preset adjustment, development and postprocessing working procedures and Handling device of carrying substrate etc. has been omitted.In addition, due to first～the 4th near exposure device main body 2,3,4,5 so long as the different formation of the adsorption plane of substrate maintaining part described later get final product, therefore below in only describe in detail near exposure device main body 2 first.
As shown in Figure 2, first possesses near exposure device main body 2: the mask maintaining part 10 that is used for keeping mask M; Be used for keeping the substrate maintaining part 20 of glass substrate (being exposed material) W; The lamp optical system 30 of the irradiation means of using as pattern exposure; Substrate maintaining part 20 is moved to X-axis, Y-axis, Z-direction, and the substrate holding portion moving mechanism 40 that the gradient (tilt) of substrate maintaining part 20 is adjusted; And the device pedestal 50 of supporting mask maintaining part 10 and substrate holding portion moving mechanism 40.
In addition, glass substrate W (being designated hereinafter simply as " substrate W ") and mask M configure opposed to each other, will be depicted in mask pattern on this mask M at need and expose and be coated with emulsion on the surface (with the opposed faces side of mask M) of transfer printing.In addition, mask M is made of fused quartz, forms oblong-shaped.
For convenience of description, if begin explanation from lamp optical system 30, lamp optical system 30 possesses: as for example high-pressure mercury-vapor lamp 31 of light source for ultraviolet ray irradiation; The concave mirror 32 of the light optically focused that will irradiate from this high-pressure mercury 31; Near two kinds of optical integrators 33 that freely configure the focus of this concave mirror 32 with switching; Be used for to change the plane mirror 35,36 and spherical reflector 37 of optical path direction; And be configured between this plane mirror 36 and optical integrator 33 and the shutter 34 of use is controlled in exposure that switch is controlled illumination path.
In addition, in lamp optical system 30, control with shutter 34 if open exposure in when exposure, the light that penetrates from high-pressure mercury electric light 31 vertically is radiated on the surface of mask M and substrate W, with the directional light of using as pattern exposure through light path L shown in Figure 2.Thus, the mask pattern of mask M is exposed and is transferred on substrate M.
As Fig. 2～shown in Figure 4, mask maintaining part 10 possesses: the mask maintaining part pedestal 11 that is formed with the peristome 11a of rectangular shape at central portion; With the mask holding frame 12 on the peristome 11a that can be arranged on to the mode that X-axis, Y-axis, θ direction move mask maintaining part pedestal 11; Be arranged on mask holding frame 12 and adsorb the chuck segment 14 that keeps mask M; And mask holding frame 12 and chuck (chuck) section are moved to X-axis, Y-axis, θ direction, and the mask position adjusting mechanism 16 that the position that remains on the mask M on this mask holding frame 12 is adjusted.
Mask maintaining part pedestal 11 is supported to and utilizes vertical establishing (the upright setting) can move to Z-direction at the pillar 51 on device pedestal 50 and the Z axis mobile device 52 that is located on the upper end of pillar 51, and is configured in the top of substrate maintaining part 20.Z axis mobile device 52 by carrying out simple knee-action, makes mask maintaining part 10 be elevated to the position of regulation such as possessing the electric actuator that is made of motor and ball screw etc. or pneumatics cylinder etc.In addition, use Z axis mobile device 52 when the cleaning of the replacing of carrying out mask M or workpiece chuck 21 etc.
Mask position adjusting mechanism 16 possesses: be arranged on 1 Y direction drive unit 16y on one side of the X-direction of mask holding frame 12; With 2 X-direction drive unit 16x that are arranged on one side of the Y direction of mask holding frame 12.
And, in mask position adjusting mechanism 16, by driving 1 Y direction drive unit 16y, mask holding frame 12 is moved to Y direction, by driving comparably 2 X-direction drive unit 16x, mask holding frame 12 is moved to X-direction.In addition, make mask holding frame 12 move (around the rotation of Z axis axle) to the θ direction by driving 2 arbitrary drive units in X-direction drive unit 16x.
In addition, as shown in Figure 4, at the upper surface of mask maintaining part pedestal 11, be provided with the gap sensor 17 for the gap between the opposed faces of measuring mask M and substrate W; Mask alignment camera 18 with the installation site that remains on the mask M on chuck segment 14 for confirmation.These gap sensors 17 and mask alignment are retained with camera 18 and utilize travel mechanism 19 to move to X-axis, Y direction, and are configured in mask holding frame 12.
In addition, at the upper surface of mask maintaining part pedestal 11, as shown in Figure 4, at the both ends of the X-direction of the peristome 11a of mask maintaining part pedestal 11, what be provided with the both ends of coming as required shadowing mask M covers opening 38.This covers opening (aperture) 38 and utilizes and covered peristome driving mechanism 39 and can be moved to X-direction by what motor, ball screw and straight line guidance etc. consisted of, with the dead area at the both ends of adjusting mask M.In addition, cover opening 38 and not only can be located on the both ends of X-direction of peristome 11a, equally also can be located on the both ends of Y direction of peristome 11a.
As shown in Figures 2 and 3, substrate maintaining part 20 is arranged on substrate holding portion moving mechanism 40, and has workpiece chuck 21, and this workpiece chuck 21 has for the adsorption plane 22 that substrate W is remained on substrate maintaining part 20 at upper surface.In addition, work chuck 21 keeps substrate W by vacuum suction.
As shown in Figures 2 and 3, substrate maintaining part moving part 40 possesses: the Y-axis feed mechanism 41 that substrate maintaining part 20 is moved to Y direction; The X-axis feed mechanism 42 that substrate maintaining part 20 is moved to X-direction; Gradient with adjusting substrate maintaining part 20 makes substrate maintaining part 20 to the Z-gradient adjusting mechanism 43 of Z-direction fine motion simultaneously.
Y-axis feed mechanism 41 possesses: a pair of straight line guidance 44 that is located at the upper surface of device pedestal 50 along Y direction; The Y-axis worktable 45 that can be supported movably to Y direction by straight line guidance 44; The Y-axis that Y-axis worktable 45 is moved to Y direction feeds drive unit 46.In addition, feed the motor 46c of drive unit 46 by driving Y-axis, ball screw 46b is rotated, can Y-axis worktable 45 be moved along the guide rail 44a of straight line guidance 44 with ball screw 46a, substrate maintaining part 20 is moved to Y direction.
In addition, X-axis feed mechanism 42 possesses: at a pair of straight line guidance 47 of Y-axis worktable 45 upper surfaces along the X-direction setting; The X-axis worktable 48 that can be supported movably to X-direction by straight line guidance 47; The X-axis that X-axis worktable 48 is moved to X-direction feeds drive unit 49.And, feed the motor 49c of drive unit 49 by driving X-axis, ball screw 49b is rotated, with not shown ball screw nut, X-axis worktable 48 is moved along the guide rail 47a of straight line guidance 47, substrate maintaining part 20 is moved to X-direction.
Z-gradient adjusting mechanism 43 possesses: be located at the motor 43a on X-axis worktable 48; By the ball screw axle 43b of motor 43a rotary actuation; The wedge-like nut 43c that forms wedge-like and screw togather with ball screw axle 43b: be wedge-like outstanding be arranged on substrate maintaining part 20 below, and be sticked in wedge-shaped part 43d in the dip plane of wedge-like nut 43c.And in the present embodiment, Z-gradient adjusting mechanism 43 is provided with 2 in one distolateral (the positive front side of Fig. 1) of the X-direction of X-axis worktable 48, another distolateral have establish 1 (expert's side of Fig. 2, with reference to Fig. 3), be provided with altogether 3, driven independently separately and controlled.In addition, Z-gradient adjusting mechanism 43 number is set is arbitrarily.
And, in Z-gradient adjusting mechanism 43, by by motor 43a rotary actuation ball screw axle 43b, wedge nut 43c is moved horizontally to X-direction, this moves horizontally the ramp effect that moves through wedge nut 43c and wedge-shaped part 43d and is transformed into the fine motion campaign of high-precision up and down, and wedge-shaped part 43d is to the fine motion of Z direction.So, by driving 3 Z-gradient adjusting mechanisms 43 with same amount, can make substrate maintaining part 20 to the Z-direction fine motion, in addition, by driving independently 3 Z-gradient adjusting mechanisms 43, can adjust the gradient of substrate maintaining part 20.Thus, the position of the vergence direction of the Z axis by fine setting substrate maintaining part 20 can make mask M and substrate W maintenance predetermined distance ground parallel opposed.
In addition, as shown in Figures 2 and 3, first near exposure device main body 2 in, the position detecting device that is provided with the position of detecting substrate maintaining part 20 is laser length measurement device 60.This laser length measurement device 60 is devices that the displacement of the substrate maintaining part 20 that occurs when driving substrate holding portion moving mechanism 40 is measured.
Laser length measurement device 60 possesses: X-axis is with catoptron 64, and it is upper and set along the X-direction side of substrate maintaining part 20 that it is fixed on strut (not diagram); Y-axis is with catoptron 65, and it is fixed on strut 71 and sets along the Y direction side of substrate maintaining part 20; X-axis length meter (length meter) 61 and beat analyzer (length meter) 62, it is provided on the X-direction end of device pedestal 50, by to Z axis with catoptron 64 irradiating lasers (instrumentation light), be subjected to light by the laser of X-axis with catoptron 64 reflections, the position of instrumentation substrate maintaining part 20; 1 Y-axis length meter (length meter) 63, it is provided on the Y direction end of device pedestal 50, by to Y-axis with catoptron 65 irradiating lasers, be subjected to light by the laser of Y-axis with catoptron 65 reflections, and the position of instrumentation substrate maintaining part 20.
And, in laser length measurement device 60, from X-axis length meter 61, beat analyzer 62 and Y-axis length meter 63 be radiated at X-axis with catoptron 64 and Y-axis with the laser on catoptron 65, reflected with catoptron 65 with catoptron 64 and Y-axis by X-axis, thereby measure accurately the X-axis of substrate maintaining part 20, the position of Y direction.In addition, the position data of X-direction is measured by X-axis length meter 61, and the position of θ direction is measured by beat analyzer 62.In addition, the position of substrate maintaining part 20 can be by adding the position that utilizes X-direction position, Y direction position and θ direction that laser length measurement device 60 measures, suitable append to revise calculate.
Fig. 5 (a) schematically shows the first vertical view near the adsorption plane of the work chuck 21 of exposure device main body 2, and Fig. 5 (b) is the V section enlarged drawing in Fig. 5 (a).Be formed with independently 7 binding domains on the adsorption plane 22 of work chuck 21, i.e. the first binding domain 80a～the 7th binding domain 80g.The second binding domain 80b in the first binding domain 80a of central authorities and its outside is separated by the first partition 81a of square shape, and the 3rd binding domain 80c in the second binding domain 80b and its outside is separated by dimetric the second partition 82a.Moreover the 3rd binding domain 80c and 4 the 4th～the 7th binding domain 80d, 80e, 80f, 80g in the localities that are formed at its outside are separated by dimetric the 3rd partition 83a.
So the first binding domain 80a delimited by the first partition 81a, the second binding domain 80b delimited between the first partition 81a and the second partition 82a, and the 3rd binding domain 80c delimited between second partition 82a and the 3rd dividing plate 83a.Moreover the 4th binding domain 80d～the 7th binding domain 80g delimited by the peripheral wall 84a of the 3rd partition 83a and the neighboring that becomes adsorption plane 22.In addition, the shape of periphery 84a is corresponding with the size of rectangular substrate W, carries out the absorption of the 4th binding domain 80d～the 7th binding domain 80g according to the direction of substrate W.
In addition, each binding domain 80a ..., in 80g, be formed with a plurality of projections 85 that height equates with the height of each partition 81a, 82a, 83a, each partition 81a, 82a, 83a and projection 85 can connect with the back side of substrate W.The part of in addition, removing each partition 81a, 82a, 83a and projection 85 for each binding domain 80a ..., 80g lower curtate 86.In addition, the processing of each partition 81a, 82a, 83a and projection 85 can be the cutting of end mill etc., can be also shot blast.
In addition, each binding domain 80a ..., each lower curtate 86 in 80g the surface, opening have a plurality of positive/negative-pressures hole 87a ..., 87g.And, when absorption substrate W, by from these positive/negative-pressures hole 87a ..., 87g carries out vacuum attraction, make by each binding domain 80a ..., the space that surrounds, the back side of each lower curtate 86, each partition 81a, 82a, 83a and surrounding wall portion 84a and substrate W of 80g becomes negative pressure.When unloading infrabasal plate W, in order to be easy to separating base plate W, with interior volume to atmosphere open wide or from positive/negative-pressure hole 87a ..., 87g imports malleation.In addition, when absorption substrate W, carry out lentamente laterally by the first binding domain 80a from the inboard, can reduce deflection.In addition, when substrate W is exposed, also can with by positive/negative-pressure hole 87a ..., 87g undertaken by the state of vacuum attraction, but also can carry out with the state of the vacuum attraction of part or all of each binding domain of releasing.
In addition, be formed with a plurality of pin-and-holes (not shown) on adsorption plane 22, above-mentioned pin-and-hole be used for by workpiece loading device (not shown) when substrate W conveyance is on the workpiece chuck 21 for advancing and retreat from a plurality of pins (not shown) of adsorption plane 22 turnover.
In addition, adsorption plane 22 has roughly the same profile cun method near exposure device main body 2,3,4,5 at each, therefore as shown in Figure 1, outermost peripheral wall 84a ..., 84d the position identical near exposure device main body 2～5 at each.
Here, shown in Figure 1 first near exposure device main body 2～4th near the first partition 81a of exposure device main body 5 ..., 81d, the second partition 82a ..., 82d, and the 3rd partition 83a ..., 83d is respectively formed on mutually different positions.
Therefore, adopt first near exposure device main body 2～4th near exposure device main body 5, when carrying out the exposure transfer printing of the first～four layer, each partition 81a that contacts with the back side of substrate W ..., 81d, 82a ..., 82d, 83a ..., 83d the position respectively different.With overlapping the illustrating of dot-and-dash line, substrate W is positioned in the 4th V1d section of Fig. 1 near on the adsorption plane 22 of the workpiece chuck 21 of exposure device main body 5 time in Fig. 6, and first near exposure device main body 2～3rd near second and third partition 82a of exposure device main body 4 ..., 82c, 83a ..., the 83c position that contacts with substrate W Fig. 1 in VIa～VId section.
If adopt so consist of first near exposure device main body 2～4th near exposure device main body 5, carry out the exposure transfer printing of the first～four layer on substrate W, in the position of partition, because the impact of temperature variation produces some distortion at substrate, but due to partition 81a ..., 81d; 82a ..., 82d; 83a ..., 83d the position 4 exposure device main bodys 2 ..., different respectively in 5, therefore can not find the exposure inequality on substrate W, and the generation of the profile variation that can suppress to expose.In addition, peripheral wall 84a ..., the substrate W that contacts of 84d the position for pattern exposure being transferred in the outside of the area of the pattern on substrate W, even so identical exposure accuracy that also do not affect in position of each exposure device main body 2,3,4,5 peripheral wall.
In addition, the present invention is not limited to described each embodiment, can suitablely change within not breaking away from the zone of main idea of the present invention.
In the above-described embodiment, partition is formed by the continuous part of rectilinear form, and projection is formed by square shape, but also can change to as shown in Figures 7 and 8 various shape.
For example, as shown in Fig. 7 (a)～(h), partition 90 also can be made of continuous part 90a and the extension 90b that stretches out in the direction of two side direction of this continuous part 90a and continuous part 90a and orthogonal.Thus, can reduce near the deflection of the noncontact part of the substrate W partition 90, the gap value that can make mask M and substrate W is homogenising more, can suppress the uneven and profile variation of exposing of exposure.
Particularly, as shown in Fig. 7 (a), (d)～(h), partition 90 also can be made of continuous part 90a and the extension 90b that stretches out to projection 91 that is positioned at the both sides of this continuous part 90a, as shown in Fig. 7 (b), the direction that the extension 90b of partition 90 also can stretch out at the continuous part 90a of partition 90 is stretched out towards the centre position of 91 of the projections of adjacency.In addition, as shown in Fig. 7 (c), the prolonging of a side that also can continuous part 90a part 90b and stretches out towards projection 91, and the extension 90b of opposite side stretches out towards the centre position of 91 of projections.
In addition, as shown in Fig. 7 (d), Fig. 7 (f), Fig. 7 (g), continuous part 90a between the adjacent extension 90b of direction that continuous part 90a stretches out also can form curved shape according to the shape of end mill, in addition, as shown in Fig. 7 (f), continuous part 90a can not be also linearity, and with staggered connection.Moreover, as shown in Fig. 7 (c), Fig. 7 (d), Fig. 7 (e), extension 90b forms in the different mode of mutual extended position in the both sides of continuous part 90a, in Fig. 7 (e), prolongs the top that part 90b and stretches out to consist of projection 91.
In addition, as shown in Fig. 7 (a)～7 (c), make the interval that is positioned near the projection 91 partition 90 less than the interval that is positioned at the projection 91 on the part of separating from partition 90.In the situation that the interval between partition 90 and projection nearby 91 is large, the deflection of noncontact part increases, have the uneven possibility of exposure occurs, but as shown in Fig. 7 (a)～Fig. 7 (c), by reducing to be positioned near the interval of the projection 91 of partition 90, the deflection of noncontact part can be reduced, exposure can be suppressed uneven.
In addition, as shown in Fig. 8 (a), partition 90 also can be made of continuous part 90a and rectangular segment 90c, this rectangular segment 90c is in the both sides of this continuous part 90a, from continuous part 90a discretely to stretching out with the direction of continuous part 90a and orthogonal, or as shown in Fig. 8 (b) and Fig. 8 (c), also can be consisted of by 2 or 3 continuous part 90a.Like this by consisting of partition 90 by a plurality of continuous part 90a, and make and disperse with the contact portion of substrate W and be not vulnerable to the impact of temperature, thereby can reduce the deflection of noncontact part.
In addition, as shown in Fig. 8 (d)～8 (g), partition 90 also can consist of along rectangular segment 90d, 90e or the swash part 90f that continuous part 90a stretches out discontinuously by continuous part 90a with in the one or both sides of this continuous part 90a.That is to say, partition 90 can be symmetrical with respect to continuous part 90a, can be also asymmetric.
In addition, as shown in Fig. 8 (h), as partition 90, also can be for the gap between the projection 90g that buries adjacency at the circular or foursquare projection 90g in the direction multiple row ground configuration that forms partition 90, or as shown in Fig. 8 (i), by reducing the interval of projection 90i, discontinuous projection 90g, 90i are concentrated, separate adjacent binding domain.
In addition, the partition of each exposure device main body can fully not overlapping contact in the position identical with the back side of substrate, and contact also can overlap.In addition, the shape of above-mentioned partition 90 can adopt by proper combination.
In addition, in the present embodiment, each adsorption plane near the exposure device main body is configured to different structures, but also can make each adsorption plane form respectively identical formation by the width of widening as the periphery in the area of the pattern outside, also can mount on a plurality of ground, position that mount that stagger a little substrate near the exposure device main body.Thus, a wall energy contacts with the back side of substrate in different positions in each exposure device main body, can suppress to occur exposure inequality and exposure profile variation.In addition, can the width design of periphery be become wider than maximum offset between near the exposure device main body a plurality of.
[the second embodiment]
Then, based on Fig. 9～Figure 17, the exposure device of the second embodiment of the present invention and the exposure method of substrate are elaborated.
As shown in Figure 9, exposure device 1 of the present invention possesses: to ground floor expose first near exposure device main body 2, to the second layer expose second approach exposure main body 3, to the 3rd layer expose the 3rd near exposure device main body 4 and to the 4th layer expose the 4th near exposure device main body 5.In addition, with the device that uses in the pre-service such as coating, pre-determined bit, development and postprocessing working procedures, and the diagram of the Handling device of carrying substrate etc. omitted.In addition, due to first～the 4th near exposure device main body 2,3,4,5 so long as the different formation of the adsorption plane of substrate maintaining part described later gets final product, therefore only describe in detail near exposure device main body 2 first hereinafter.
As shown in figure 10, first possesses for the mask maintaining part 10 that keeps mask M near exposure device main body 2; Be used for keeping the substrate maintaining part (Substrate table) 20 of glass substrate (being exposed material) W; The lamp optical system 30 of the exposure light of irradiation pattern exposure use; Substrate maintaining part 20 is moved to X-axis, Y-axis, Z-direction, and the substrate holding portion moving mechanism 40 that the gradient of substrate maintaining part 20 is adjusted; The device pedestal 50 of supporting mask maintaining part 10 and substrate holding portion moving mechanism 40.
In addition, glass substrate W (being designated hereinafter simply as " substrate W ") and mask M configure opposed to each other, be coated with emulsion with being depicted on the surface (with the opposed faces side of mask M) of the mask pattern exposure transfer printing on this mask M.In addition, mask M is made of fused quartz, and forms oblong-shaped.
For convenience of description, if begin explanation from lamp optical system 30, lamp optical system 30 possesses: the light source of ultraviolet ray irradiation use is high-pressure mercury-vapor lamp 31 for example; The concave mirror 32 of the light optically focused that will irradiate from this high-pressure mercury 31; Near two kinds of optical integrators 33 that freely configure the focus of this concave mirror 32 with switching; Be used for to change the plane mirror 35,36 and spherical reflector 37 of the direction of light path; And be configured between this plane mirror 36 and optical integrator 33, and switch is controlled the shutter 34 of the exposure control use of illumination path.
And, in lamp optical system 30, if opening exposure when exposure controls with shutter 34, the light that penetrates from high-pressure mercury electric light 31 is through light path L shown in Figure 10, as the directional light that pattern exposure is used, vertically be radiated at the mask M that remains on mask maintaining part 10 and remain on the surface of the substrate W on substrate maintaining part 20.Thus, the mask pattern exposure with mask M is transferred on substrate W.
As Figure 10～shown in Figure 12, mask maintaining part 10 possesses: the mask maintaining part pedestal 11 that is formed with the peristome 11a of rectangular shape at central portion; With the mask holding frame 12 on the peristome 11a that can be arranged on to the mode that X-axis, Y-axis, θ direction move mask maintaining part pedestal 11; Be arranged on mask holding frame 12 and adsorb the chuck segment 14 that keeps mask M; And mask holding frame 12 and chuck segment are moved to X-axis, Y-axis, θ direction, and the mask position adjusting mechanism 16 that the position that remains on the mask M on this mask holding frame 12 is adjusted.
Mask maintaining part pedestal 11 is supported to and utilizes the vertical Z axis mobile device 52 that is located at the pillar 51 on device pedestal 50 and is located on the upper end of pillar 51 to move to Z-direction, and it is configured in the top of substrate maintaining part 20.Z axis mobile device 52 by carrying out simple knee-action, makes mask maintaining part 10 be elevated to the position of regulation such as possessing the electric actuator that is made of motor and ball screw etc. or pneumatics cylinder etc.In addition, use Z axis mobile device 52 when the cleaning of the exchange of carrying out mask M and workpiece chuck 21 etc.
Mask position adjusting mechanism 16 possesses: be arranged on 1 Y direction drive unit 16y on one side of the X-direction of mask holding frame 12; With 2 X-direction drive unit 16x that are arranged on one side of the Y direction of mask holding frame 12.
And, in mask position adjusting mechanism 16, by driving 1 Y direction drive unit 16y, mask holding frame 12 is moved to Y direction, by driving comparably 2 X-direction drive unit 16x, mask holding frame 12 is moved to X-direction.In addition, make mask holding frame 12 move (around the rotation of Z axis) to the θ direction by driving 2 arbitrary drive units in X-direction drive unit 16x.
In addition, as shown in figure 12, be provided with at the upper surface of mask maintaining part pedestal 11: the gap sensor 17 that is used for measuring the gap between the opposed faces of mask M and substrate W; Mask alignment camera 18 with the installation site that remains on the mask M on chuck segment 14 for confirmation.These gap sensors 17 and mask alignment are retained with camera 18 and utilize travel mechanism 19 to move to X-axis, Y direction, and are configured in mask holding frame 12.
In addition, at the upper surface of mask maintaining part pedestal 11, as shown in figure 12, at the both ends of the X-direction of the peristome 11a of mask maintaining part pedestal 11, what be provided with the both ends of coming as required shadowing mask M covers opening 38.This covers opening 38 and covers peristome driving mechanism 39 and can move to X-direction by what be made of motor, ball screw and straight line guidance etc., adjusts the dead area at the both ends of mask M.In addition, cover the both ends that peristome 38 not only is located at the X-direction of peristome 11a, equally also can be located at the both ends of the Y direction of peristome 11a.
As Figure 10 and shown in Figure 11, substrate maintaining part 20 is arranged on substrate holding portion moving mechanism 40, has workpiece chuck 21, this workpiece chuck 21 has for the adsorption plane 22 that substrate W is remained on substrate maintaining part 20 at upper surface.In addition, work chuck 21 keeps substrate W by vacuum suction.
As Figure 10 and shown in Figure 11, substrate keeps moving part 40 to possess: the Y-axis feed mechanism 41 that substrate maintaining part 20 is moved to Y direction; The X-axis feed mechanism 42 that substrate maintaining part 20 is moved to X-direction; Gradient with adjusting substrate maintaining part 20 makes substrate maintaining part 20 to the Z-gradient adjusting mechanism 43 of Z-direction fine motion simultaneously.
Y-axis feed mechanism 41 possesses: a pair of straight line guidance 44 that is located at the upper surface of device pedestal 50 along Y direction; Be supported to the Y-axis worktable 45 that utilizes straight line guidance 44 to move to Y direction; The Y-axis that Y-axis worktable 45 is moved to Y direction feeds drive unit 46.In addition, feed the motor 46c of drive unit 46 by driving Y-axis, make ball screw 46b rotation, Y-axis worktable 45 and ball screw 46a are together moved along the guide rail 44a of straight line guidance 44, substrate maintaining part 20 is moved to Y direction.
In addition, X-axis feed mechanism 42 possesses: a pair of straight line guidance 47 that arranges along X-direction at Y-axis worktable 45 upper surfaces; Be supported the X-axis worktable 48 that utilizes straight line guidance 47 to move to X-direction; The X-axis that X-axis worktable 48 is moved to X-direction feeds drive unit 49.And, feed the motor 49c of drive unit 49 by driving X-axis, ball screw 49b is rotated, X-axis worktable 48 and not shown ball screw nut are together moved along the guide rail 47a of straight line guidance 47, thereby substrate maintaining part 20 is moved to X-direction.
Z-gradient adjusting mechanism 43 possesses: be located at the motor 43a on X-axis worktable 48; The ball screw axle 43b that is driven in rotation by motor 43a; The wedge-like nut 43c that forms wedge-like and screw togather with ball screw axle 43b; Be wedge-like outstanding be arranged on substrate maintaining part 20 below, and the wedge-shaped part 43d that engages with the dip plane of wedge-like nut 43c.In addition, in the present embodiment, Z-gradient adjusting mechanism 43 is provided with 2 in one distolateral (the positive front side of Fig. 9) of the X-direction of X-axis worktable 48, distolaterally be provided with 1 (expert's side of Fig. 2 at another, with reference to Figure 11), be provided with altogether 3, driven independently separately and controlled.In addition, Z-gradient adjusting mechanism 43 number is set is arbitrarily.
And, in Z-gradient adjusting mechanism 43, by utilizing motor 43a rotary actuation ball screw axle 43b, wedge nut 43c is moved horizontally to X-direction, this moves horizontally motion and utilizes the ramp effect of wedge nut 43c and wedge-shaped part 43d to be transformed into the fine motion campaign of high-precision up and down, and wedge-shaped part 43d is to the fine motion of Z direction.So, by driving 3 Z-gradient adjusting mechanisms 43 with same amount, can make substrate maintaining part 20 to the Z-direction fine motion, in addition, by driving independently 3 Z-gradient adjusting mechanisms 43, can adjust the gradient of substrate maintaining part 20.Thus, the position of the vergence direction of the Z axis by fine setting substrate maintaining part 20 can make mask M and substrate W keep predetermined distance ground parallel opposed.
In addition, first near exposure device main body 21 in, as Figure 10 and shown in Figure 11, the position detecting device that is provided with the position of detecting substrate maintaining part 20 is laser length measurement device 60.This laser length measurement device 60 is the equipment that the displacement of the substrate maintaining part 20 that occurs when driving substrate holding portion moving mechanism 40 is measured.
Laser length measurement device 60 possesses: Y-axis is with catoptron 65, and it is fixed on the upper and X-axis that set along the side of the X-direction of substrate maintaining part 20 of strut (not diagram) with catoptron 64; Be fixed on strut 71 and along the side of the Y direction of substrate maintaining part 20 and set; X-axis length meter (length meter) 61 and beat analyzer (length meter) 62, it is provided on the X-direction end of device pedestal 50, by to Z axis with catoptron 64 irradiating lasers (instrumentation light), be subjected to light by the laser of X-axis with catoptron 64 reflections, with the position of instrumentation substrate maintaining part 20; And 1 Y-axis length meter (length meter) 63, be provided on the Y direction end of device pedestal 50, by to Y-axis with catoptron 65 irradiating lasers, be subjected to light by the laser of Y-axis with catoptron 65 reflections, with the position of instrumentation substrate maintaining part 20.
And, in laser length measurement device 60, from X-axis length meter 61, beat analyzer 62 and Y-axis length meter 63 be radiated at X-axis with catoptron 64 and Y-axis with the laser on catoptron 65, by X-axis with catoptron 64 and Y-axis with catoptron 65 reflections, thereby but the X-axis of high precision instrumentation substrate maintaining part 20, the position of Y direction.In addition, the position data of X-direction is measured by X-axis length meter 61, and the position of θ direction is measured by beat analyzer 62.In addition, the position of substrate maintaining part 20 can be by adding the position that utilizes X-direction position, Y direction position and θ direction that laser length measurement device 60 measures, suitable append to revise calculate.
Figure 13 schematically shows the first vertical view near the adsorption plane of the workpiece chuck 21 of exposure device main body 2.On the adsorption plane 22 of work chuck 21, be formed with independently 13 binding domains, that is to say, be formed with the first binding domain 800a～the 11 binding domain 800m.The first binding domain 800a is separated by the first partition 810a of square shape, and separates the second binding domain 800b～the 9th binding domain 800i and the first binding domain 800a is adjacent to be configured to rectangular successively by partition 810b～810i.Become general wall with the partition 810b of the second binding domain 800b of the partition 810a adjacency of the first binding domain 800a in its adjacency section.In addition, the partition 810d with the 4th binding domain 800d of the partition 810a adjacency of the first binding domain 800a becomes general wall in its adjacency section too.In addition, about other binding domain too.
Around the first binding domain 800a～the 9th binding domain 800i, around the tenth around binding domain 800j～13 binding domain 810m separated by partition 810j～810m, form oblong-shaped.With the tenth around the partition 810h of partition 810g, the 8th binding domain 800h of the 7th binding domain 800g of partition 810j adjacency of binding domain 800j and the partition 810i of the 9th binding domain 80i become general wall in its adjacency section.For binding domain around other too.In addition, around the tenth around binding domain 800j～13 binding domain 800m corresponding with the size of OBL substrate W, with substrate W towards as one man use.
Figure 14 (A)～(D) is the enlarged drawing of each one of A section, B section, C section, D section in Figure 13.Each binding domain 800a ..., in 800m, be formed with height and each partition 810a ..., 810m a plurality of projections 85 of equating of height, each partition 810a ..., 810m and projection 85 can connect with the back side of substrate W.In addition, remove each partition 810a ..., 810m and projection 85 part be each binding domain 800a ..., 800g lower curtate 86.In addition, each partition 810a ..., 810m and projection 85 processing can be the cutting of end mill etc., can be also shot blast.
In addition, each binding domain 800a ..., each lower curtate 86 in 800m the surface, opening has a plurality of positive/negative-pressures hole 87.And, when absorption substrate W, by 87 carrying out vacuum attraction from these positive/negative-pressures holes, make by each binding domain 800a ..., each lower curtate 86 of 800m and each partition 810a ..., 810m and around binding domain 800j ..., 800m, the back side of the substrate W space that surrounds becomes negative pressure.When unloading infrabasal plate W, in order to be easy to separating base plate W, interior volume is opened wide or 87 imported malleations from the positive/negative-pressure hole to atmosphere.
As shown in Figure 15 (A), what loaded substrate W (solid line) on the adsorption plane 22 (dot-and-dash line) first near the workpiece chuck 21 of exposure device main body 2 is Figure 15 (B).In addition, the oblique line section of the substrate W in Figure 15 (B) represents the cell S e1 that is exposed～Se4.In this case, basal disc W vertically configures use with what is called, but as binding domain, can use around the first binding domain 800a～the 9th binding domain 800i, the tenth binding domain 800l around binding domain 800j and the 12.
These binding domains can be controlled by the absorption and control 70a of section (with reference to Figure 10) that is located in control part 70 (with reference to Figure 10).The 70a of absorption and control section and other binding domain are independently to controlling with binding domain corresponding to the irradiated area of exposure light.For example, can control the binding domain corresponding with the exposure light irradiated area to non-absorption, in addition, also can carry out Decompression Controlling with respect to other binding domain pair binding domain corresponding with the exposure light irradiated area.
The absorption and control of substrate W when adopting Figure 16 (A)～(D) to the exposure of the cell S e1 that carries out substrate W～Se4 describes.
At first, as shown in Figure 16 (A), by shining exposure light to cell S e1, with cell S e1 exposure, but under this moment cell S e1, the first binding domain 800a, the second binding domain 800b, the 4th binding domain 800d and the 5th binding domain 800e of (exposure light irradiated area) are controlled as non-adsorbed state.Corresponding, beyond expression cell S e1, the 3rd binding domain 800c, the 6th binding domain 800f, the 7th binding domain 800g, the 8th binding domain 800h and the 9th binding domain 800i of the L word lines Q1 of section of (exposure light irradiated area) are controlled as adsorbed state.In this case, around the tenth around binding domain 800j and the 12 binding domain 800l can adsorb, can not adsorb yet.Like this, by not carrying out the absorption of the binding domain under the exposure light irradiated area, can avoid the substrate distortion that is caused by absorption.
Then, by substrate holding portion moving mechanism 40, substrate maintaining part 20 is moved to the X-direction step, as shown in Figure 16 (B), by shining exposure light to cell S e2, with cell S e2 exposure, but under this moment cell S e2, the 3rd binding domain 800c, the second binding domain 800b, the 6th binding domain 800f and the 5th binding domain 800e of (exposure light irradiated area) are controlled as non-adsorbed state.Corresponding, beyond expression cell S e2, the first binding domain 800a, the 4th binding domain 800d, the 7th binding domain 800g, the 8th binding domain 800h and the 9th binding domain 800i of the L word lines Q2 of section of (exposure light irradiated area) are controlled as adsorbed state.
In addition, after the exposure that switches in cell S e1 of this binding domain ends, carry out before the step of cell S e2 moves.Thus, can prevent that when step substrate W from moving.
Then, by substrate holding portion moving mechanism 40, substrate maintaining part 20 is moved to the Y direction step, as shown in Figure 16 (C), by shining exposure light to cell S e3, with cell S e3 exposure, but under this moment cell S e3, the 9th binding domain 800i, the 8th binding domain 800h, the 6th binding domain 800f and the 5th binding domain 800e of (exposure light irradiated area) are controlled as non-adsorbed state.Corresponding, beyond expression cell S e3, the 7th binding domain 800g, the 4th binding domain 800d, the first binding domain 800a, the second binding domain 800b and the 12 binding domain 800l of the L word lines Q3 of section of part (exposure light irradiated area) are controlled as adsorbed state.
Then, by substrate holding portion moving mechanism 40, substrate maintaining part 20 is moved to the X-direction step, as shown in Figure 16 (D), by shining exposure light to cell S e4, with cell S e4 exposure, but under this moment cell S e4, the 7th binding domain 800g, the 8th binding domain 800h, the 4th binding domain 800d and the 5th binding domain 800e of (exposure light irradiated area) are controlled as non-adsorbed state.Corresponding, beyond expression cell S e4, the first binding domain 800a, the second binding domain 800b, the 3rd binding domain 800c, the 6th binding domain 800f and the 9th binding domain 800i of the L word lines Q4 of section of part (exposure light irradiated area) are controlled as adsorbed state.
In addition, in the above-described embodiment, switch binding domain before step, but also can switch binding domain when step.Need only like this and often have the binding domain of adsorbed state when step, and as long as any binding domain beyond exposure irradiation area is adsorbed.
For example, when the step from cell S e1 to cell S e2, for the 7th binding domain 800g, the 8th binding domain 800h and the 9th binding domain 800i, often be the adsorbed state original state, therefore absorption and control can be switched to the first binding domain 800a, the 4th binding domain 800d from the 3rd binding domain 800c, the 6th binding domain 800d.
In addition, with respect to 1 substrate W, 4 unit (so-called 4 junctions) are exposed in Figure 17 (A) and 17 (8), but also be not limited to this, all junctions all are suitable for.For example, Figure 16 (A) is the diagram of the substrate W (laterally long substrate) of landscape configuration 6 junctions, and the absorption during exposure and above-mentioned embodiment carry out in the same manner.In this case, use the 11 around binding domain 800m around binding domain 800k and the 13.In addition, Figure 17 (B) is the diagram of the substrate W (vertically long substrate) of vertically configuration 6 junctions, and the absorption during exposure and above-mentioned embodiment carry out in the same manner.In this case, use the tenth around binding domain 800l around binding domain 800j and the 12.
In addition, be formed with a plurality of pin-and-holes (not shown) on adsorption plane 22, by workpiece loading device (not shown) when substrate W conveyance is on the workpiece chuck 21, can be from these pin-and-holes advance and retreat from a plurality of pins (not shown) of adsorption plane 22 turnover.
If adopt so consist of first near exposure device main body 2～4th near exposure device main body 5, carry out the exposure transfer printing of the first～four layer on substrate W, in the position of partition, because the impact of temperature variation produces some distortion at substrate, but can eliminate the distortion of the substrate that produces because of the absorption substrate, therefore can not see on substrate W that exposure is uneven, in addition, can suppress to occur the exposure profile variation.In addition, the present invention is not limited to each above-mentioned embodiment, can do not break away from main idea of the present invention the zone in suitable the change.
In the above-described embodiment, the first binding domain 800a～the 9th binding domain 800i is as the ground formation of non-directional waveform shape with partition 810a～810i, on every side binding domain 800j ..., binding domain 810j around the 800m partition ..., 810m forms by the continuous part of rectilinear form, but the first binding domain 800a～the 9th binding domain 800i is formed by straight lines partition 810a～810i, on every side binding domain 800j ..., binding domain 810j around the 800m partition ..., 810m also can form by the continuous part as non-directional waveform shape.In addition, projection is respectively round shape and forms, but also can form square shape, can adopt various shape.
The application has quoted its content here as a reference based on the Japanese patent application 2009-267918 communique of application on November 25th, 2009 and the Japanese patent application 2010-016087 communique of application on January 28th, 2010.

Claims (4)

1. exposure device, this exposure device exposes a plurality of mask patterns successively and is transferred on substrate, it is characterized in that,
Described exposure device possesses a plurality of exposure device main bodys that by shining described exposure light, the pattern exposure of described mask are transferred on described substrate, and described exposure device main body has:
Keep having the mask of described pattern the mask maintaining part,
Have absorption keep described substrate adsorption plane the substrate maintaining part and
The irradiation section of irradiation exposure light,
Be provided with on the adsorption plane of described substrate maintaining part:
The partition that the binding domain of adjacency forms and can connect with the back side of described substrate in order to separate; With
Highly equate with the height of each described partition, in described binding domain, a plurality of projections that can connect with the back side of described substrate,
On the adsorption plane of described substrate maintaining part, except the part of described each partition and described a plurality of projections is the lower curtate of each binding domain,
The adsorption plane of each substrate maintaining part of described a plurality of exposure device main bodys has roughly the same physical dimension, and the partition of described each substrate maintaining part is formed on different positions in each described exposure device main body, be provided with absorption and control section on the adsorption plane of described substrate maintaining part, be used for will described each binding domain being controlled to be and adsorb or non-absorption;
Described absorption and control section controls the binding domain corresponding with the irradiated area of described exposure light independently with other binding domain.
2. exposure device according to claim 1, wherein, described absorption and control section controls, and making the described binding domain corresponding with described irradiated area is non-absorption.
3. exposure device according to claim 1, wherein, described absorption and control section controls, so that the binding domain corresponding with the irradiated area of described exposure light and other binding domain are in a ratio of decompression state.
4. the exposure method of a substrate, described exposure method uses a plurality of exposure device main bodys, the pattern of each mask is exposed successively be transferred on described substrate, described exposure device main body possesses: be used for to keep the figuratum mask of tool the mask maintaining part, have by absorption and keep the substrate maintaining part of adsorption plane of described substrate and the irradiation section of shining exposure light, described exposure device main body is exposed the pattern of each described mask successively and is transferred on described substrate by shining described exposure light, it is characterized in that:
Be provided with on the adsorption plane of described substrate maintaining part:
The partition that the binding domain of adjacency forms and can connect with the back side of described substrate in order to separate; With
Highly equate with the height of each described partition, in described binding domain, a plurality of projections that can connect with the back side of described substrate,
On the adsorption plane of described substrate maintaining part, except the part of described each partition and described a plurality of projections is the lower curtate of each binding domain,
Described exposure method comprises following operation: so that the mode that the back side of the diverse location in described each exposure device main body and described substrate connects with the separated partition of binding domain of described adsorption plane institute adjacency, by described a plurality of exposure device main bodys, described substrate is exposed successively, wherein, control independently the binding domain corresponding with the irradiated area of described exposure light with other binding domain.
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CN103676488B (en) * 2012-09-10 2016-02-03 上海微电子装备有限公司 Mask connecting mechanism and there is the mask platform of this mask connecting mechanism
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1427309A (en) * 2001-12-20 2003-07-02 株式会社尼康 Substrate holder, exposure device and apparatus mfg. method
EP1796143A1 (en) * 2004-09-01 2007-06-13 Nikon Corporation Substrate holder, stage apparatus, and exposure apparatus

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0629130Y2 (en) * 1988-08-31 1994-08-10 河西工業株式会社 Vehicle insulator
JP2615179B2 (en) * 1989-01-19 1997-05-28 東京エレクトロン株式会社 Resist processing apparatus and resist processing method
JPH0629130A (en) * 1992-07-13 1994-02-04 Toshiba Corp Transformer
JPH0629130U (en) * 1992-09-09 1994-04-15 日鉄セミコンダクター株式会社 Wafer holder combination
KR0176434B1 (en) * 1995-10-27 1999-04-15 이대원 Vacuum chuck apparatus
JP2000012663A (en) * 1998-06-17 2000-01-14 Nikon Corp Substrate retaining method and device and exposure device with substrate retaining device
JP2005310933A (en) * 2004-04-20 2005-11-04 Nikon Corp Substrate-holding member, aligner, and device manufacturing method
JP2006054364A (en) * 2004-08-13 2006-02-23 Nikon Corp Substrate-chucking device and exposure device
JP4579004B2 (en) * 2005-02-23 2010-11-10 株式会社日立ハイテクノロジーズ Exposure apparatus, exposure method, and manufacturing method of display panel substrate
EP1962329B1 (en) * 2005-12-08 2014-08-06 Nikon Corporation Substrate holding device, exposure device, exposure method, and device fabrication method
JP4425944B2 (en) * 2007-03-19 2010-03-03 日本精工株式会社 Work chuck and control method thereof
JP4425943B2 (en) * 2007-03-19 2010-03-03 日本精工株式会社 Work chuck
JP2009212344A (en) * 2008-03-05 2009-09-17 Nsk Ltd Work chuck, aligner, and process for producing flat panel
JP5219599B2 (en) * 2008-04-14 2013-06-26 株式会社日立ハイテクノロジーズ Proximity exposure apparatus, substrate adsorption method for proximity exposure apparatus, and display panel substrate manufacturing method
JP2009267918A (en) * 2008-04-28 2009-11-12 Panasonic Corp Stereo camera, stereo imaging method and program
JP4672784B2 (en) * 2009-05-21 2011-04-20 大日本印刷株式会社 Exposure machine and chuck stage for exposure machine

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1427309A (en) * 2001-12-20 2003-07-02 株式会社尼康 Substrate holder, exposure device and apparatus mfg. method
EP1796143A1 (en) * 2004-09-01 2007-06-13 Nikon Corporation Substrate holder, stage apparatus, and exposure apparatus

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
JP平2-191317A 1990.07.27
JP特开2007-219537A 2007.08.30
JP特开2009-212344A 2009.09.17
JP特开2009-267918A 2009.11.12

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