CN102201493A - High-speed precision crystal silicon laser etching apparatus and method - Google Patents
High-speed precision crystal silicon laser etching apparatus and method Download PDFInfo
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- CN102201493A CN102201493A CN2011100832199A CN201110083219A CN102201493A CN 102201493 A CN102201493 A CN 102201493A CN 2011100832199 A CN2011100832199 A CN 2011100832199A CN 201110083219 A CN201110083219 A CN 201110083219A CN 102201493 A CN102201493 A CN 102201493A
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Abstract
The invention provides a high-speed precision crystal silicon laser etching apparatus and method. The method comprises the following steps: (A) placing a single crystal silicon wafer or a polycrystalline silicon wafer on a four-dimensional precision moving platform for laser processing by using a specific manipulator, with the aid of an observation and monitoring CCD system; (B) precisely focusing a laser beam on the surface of the silicon wafer, scanning the surface of the silicon wafer at a high speed by using a three-dimensional dynamic focusing vibration mirror in cooperation with a specific telecentric field lens, rising the surface etching temperature of the silicon wafer, and feeding phosphorous paste or phosphoric acid to a high-speed laser etching line at the same time; and (C) removing the manipulator for the silicon wafer and fixing next silicon wafer at the same time, and repeating the above drilling mode at. The method has the following advantages: laser has the characteristics of non-contact, no environment pollution and easy controllability, and can achieve the automatic control; since the laser focusing spot is in a micrometer size or smaller, thereby achieving high silicon wafer etching accuracy, small heat affected zone at the edge, and little damage to the substrate; and the power generation efficiency of the crystal silicon is further improved, and the production cost is further reduced.
Description
Technical field
The invention belongs to the processing of laser micro-nano, photovoltaic and field of semiconductor manufacture, particularly a kind of equipment and process of crystal silicon high speed and precision laser ablation.
Background technology
Solar power generation is pollution-free with it, safety, maintenance simple, resource characteristics such as exhaustion never, is considered to most important new forms of energy of 21 century, and occupies the share of photovoltaic market, the world more than 80%.Crystal silicon solar batteries is widely used in the power station, city of power station, solar energy roof, commercial power station and high soil cost, is the most ripe, the most widely used photovoltaic product of present technology.And along with the continuous innovation of crystal silicon price is low, the crystal silicon solar batteries cost also can decline to a great extent, and crystal silicon battery has long service life, characteristics such as transformation efficiency height, possessing very big competitiveness and superiority with traditional hull cell, is the trend of following solar energy development and the main flow that use in market.
And one of key element that perplexs crystal silicon solar generating development at present is transformation efficiency and the processing cost and the efficient of crystal silicon solar batteries.The used grid line of crystal silicon sheet on the crystal silicon solar batteries, conventional method all is to starch up by printed silver, makes circuit then.Width is the thinnest can only reach 100um for this method printed silver slurry, and yields is lower, and linear inhomogeneous, it is comparatively loaded down with trivial details to change the different batches product, needs to introduce chemical medicinal liquid and cleans contaminated environment; The net tension value that stretches tight is less, and finished-product material resistance to wear, chemical proofing are relatively poor, easily aging embrittlement.Need more consumptive material in this mode of printing complex procedures, the production, producing line needs more manpower to safeguard that limitation is bigger.Print back solar cell module like this, contact resistance is big, and the free electron quantity loss is bigger, and the shading area strengthens, and has influence on crystal silicon solar generating efficiency and production cost.
Therefore, the production technology of crystal silicon can not satisfy the needs of modern sun energy technical development, has had a strong impact on the high speed development of heliotechnics.
Summary of the invention
For the production technology that solves the prior art field crystal silicon that is proposed in the above-mentioned background technology can not satisfy the problem of heliotechnics development need, the invention provides following technical scheme:
A kind of equipment and process of high speed and precision crystal silicon laser ablation comprise the steps:
A, elder generation are placed on monocrystalline silicon piece or polysilicon chip on the four-dimensional precise mobile platform of laser processing with specific mechanical arm, observe monitoring CCD system supplymentary, realize the adjustable controlled automation processing of precision;
B, the laser beam precision is focused on crystal silicon sheet surface, focusing on galvanometer with Three-Dimensional Dynamic cooperates specific psychological field mirror far away in the surface high-velocity scanning of crystal silicon sheet, crystal silicon etching surface temperature is raise, introduce phosphorus slurry or phosphoric acid simultaneously and import on the line of laser high-speed etching, being implemented in increases free electron quantity on the etched line;
C, the crystal silicon sheet is shifted out with manipulator, next crystal silicon begins fixing and repeats above drill mode simultaneously.
As a preferred embodiment of the present invention, in the described steps A, the crystal silicon sheet is suspended on the processing platform by vacuum suction.
As another kind of preferred version of the present invention, among the described step B, used LASER Light Source is the green laser or the Ultra-Violet Laser of high repetition frequency, low pulsewidth, and the frequency of LASER Light Source is more than 50KHz, and laser pulse width is femtosecond, psec or subpicosecond.
As another preferred version of the present invention, the laser of the high repetition frequency among the described step B, low pulsewidth is through behind the beam expanding lens, it is big that light beam becomes, and enter the field lens that Three-Dimensional Dynamic focuses on the galvanometer and the heart far away, focus on silicon chip surface, the whole silicon wafer surface can process in this device, realizes no graphic joining high speed and precision scanning etching.
As another preferred version of the present invention, among the described step B, when the laser high-speed precision sweep etching crystal silicon surface of high repetition frequency, low pulsewidth, the free electron source is imported on the etched line mix simultaneously, this material source is that phosphoric acid or phosphorus slurry wait other semi-conducting material.
As another preferred version of the present invention, among the described step B, the laser facula of focusing is adjustable between 1～1000um.
As another preferred version of the present invention, described etching material is the used monocrystalline silicon piece of solar energy industry, polysilicon chip or similar semi-conducting material, as to GaAs, and semi-conducting materials such as silicon nitride.
The present invention has following advantage:
1, laser has noncontact, nonpollution environment, characteristic such as easy to control, realizes automation control easily and realizes the environmental protection technological requirement;
2, the laser focusing hot spot focuses on micron order even littler, and etching silicon chip precision is higher, and the heat-affected zone, edge is less, and is less to the base material damage;
3, controlled inhibition and generation of graphics processing and machining path and easy programmingization, working (machining) efficiency is higher, and automaticity is higher;
4, adopt after the laser ablation technology, introduce P elements, increase free electron and count the P knot, surperficial free electron number increases, and surface doping concentration increases, and reduces contact resistance and reduces the shading area;
5, after the employing laser ablation technology, the generating efficiency of crystal silicon can further improve, and production cost further reduces;
6, after the laser ablation crystal silicon finishes, can on crystal silicon, realize the accuracy electroplate electrode process; Electroplated electrode is compared with the printed silver sizing process, and the wire casing width of electrode diminishes, the height step-down, and consumptive material tails off, and the effect of conductive electrode improves.
Description of drawings
Fig. 1 equipment configuration schematic diagram of the present invention.
Number in the figure is:
1-laser 2-optical gate 3-1/2 filter plate
The electronic decay mirror of 4-beam expanding lens 5-6-45 degree completely reflecting mirror
7-control system 8-scavenger system 9-CCD observes module
The 10-Three-Dimensional Dynamic focuses on galvanometer system 11-telecentric scanning field lens
12-silicon chip 13-free electron doping pipe-line system
The four-dimensional mobile platform 16-of 14-platform adsorption hole 15-crystal silicon etched line
Embodiment
Below this process implementing example is elaborated, thereby protection scope of the present invention is made more explicit defining so that advantages and features of the invention can be easier to be it will be appreciated by those skilled in the art that.
As Fig. 1 is crystal silicon high speed and precision laser ablation equipment configuration schematic diagram, laser spot focuses on the upper surface that is positioned at silicon chip before the processing, the laser beam that laser 1 sends is through behind the optical gate 2, behind electronic 1/2 filter plate 3, can not change the polarization state of light beam, change polarization angle 90 degree, can realize the operation of two kinds of vertical etched line, laser beam enter coaxial beam expanding lens 4 after, the Three-Dimensional Dynamic that makes laser beam expanding reach specific customization focuses on desired light inlet diameter in the galvanometer system 10, beam divergence angle diminishes, be beneficial to light beam Optimizing operation and coaxial beam, help the precise and tiny focusing of light beam; Expand bundle back laser beam and enter electronic decay mirror 5, can realize controlled attenuation operations, realize the recuperated under medical treatment change operation of energy; Light beam is through 45 degree completely reflecting mirrors then, light beam vertically alters course, enter Three-Dimensional Dynamic and focus on galvanometer 10, light beam further expands bundle, and can realize the 3D dynamic focusing in the certain limit, heart F-θ field mirror 11 far away by customization, laser elevation focuses on the crystal silicon sheet 12, size is 1～1000 μ m hot spot, crystal silicon sheet 12 is absorbed and fixed on the four-dimensional precision surface plate 15 by absorption aperture 14, four-dimensional platform can be realized X, Y, θ and the control of Z axle can realize the searching of crystal silicon surface laser focus by the Z axle, pass through X, Y and θ axle can be realized the accurate location and the Precision Machining of crystal silicon sheet; Control system 7 is according to graphic designs, with this light path system of laser beam process, realization is with silicon nitride material high speed and precision etching on the crystal silicon sheet, and by free electron doping pipeline 13 and processing scavenger system 8, be implemented in crystal silicon sheet 12 high speed and precision etching lines 16, whole process can be by the 9 omnidistance monitorings of CCD observing system.
The present invention is a kind of equipment and process of crystal silicon high speed and precision laser ablation, adopt high repetition frequency, the green laser or the Ultra-Violet Laser of low pulsewidth, laser pulse width is a femtosecond, psec, the lasing light emitter of subpicosecond or nanosecond, material processed is to green glow far away, the crystal silicon class material that the Ultra-Violet Laser absorptivity is higher, this type of material strong absorption wavelength is the laser in these two scopes, nearly all laser energy is all absorbed by crystal silicon sheet surface 1～2 μ m absorbed layer, laser beam high order focusing by twice expansion bundle is on crystal silicon sheet surface, and twice coaxial expansion bundle added heart focusing field lens far away, laser focusing hot spot minimum is at 1 μ m, and can realize the controllable of focal beam spot, maximum etching live width can arrive 1mm; Focus on the high-velocity scanning of galvanometer and the move left and right of light beam by Three-Dimensional Dynamic, be aided with importing on the crystal silicon surface etch live width of free electron, finish from the high-accuracy processing of crystal silicon sheet upper surface etching doping high efficiency, the processing live width is between 1～1000 μ m, the most common is 10～20 μ m, and concrete size requires to decide according to research and development.
The above; it only is one of the specific embodiment of the present invention; but protection scope of the present invention is not limited thereto; any those of ordinary skill in the art are in the disclosed technical scope of the present invention; variation or the replacement that can expect without creative work all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range that claims were limited.
Claims (7)
1. the equipment and the process of a high speed and precision crystal silicon laser ablation is characterized in that, comprise the steps:
A, elder generation are placed on monocrystalline silicon piece or polysilicon chip on the four-dimensional precise mobile platform of laser processing with specific mechanical arm, observe monitoring CCD system supplymentary, realize the adjustable controlled automation processing of precision;
B, the laser beam precision is focused on crystal silicon sheet surface, focusing on galvanometer with Three-Dimensional Dynamic cooperates specific psychological field mirror far away in the surface high-velocity scanning of crystal silicon sheet, crystal silicon etching surface temperature is raise, introduce phosphorus slurry or phosphoric acid simultaneously and import on the line of laser high-speed etching, being implemented in increases free electron quantity on the etched line;
C, the crystal silicon sheet is shifted out with manipulator, next crystal silicon begins fixing and repeats above drill mode simultaneously.
2. the equipment and the process of a kind of high speed and precision crystal silicon laser ablation as claimed in claim 1 is characterized in that: in the described steps A, the crystal silicon sheet is suspended on the processing platform by vacuum suction.
3. the equipment and the process of a kind of high speed and precision crystal silicon laser ablation as claimed in claim 1, it is characterized in that: among the described step B, used LASER Light Source is the green laser or the Ultra-Violet Laser of high repetition frequency, low pulsewidth, the frequency of LASER Light Source is more than 50KHz, and laser pulse width is femtosecond, psec or subpicosecond.
4. the equipment and the process of a kind of high speed and precision crystal silicon laser ablation as claimed in claim 1, it is characterized in that: the laser of the high repetition frequency among the described step B, low pulsewidth is through behind the beam expanding lens, it is big that light beam becomes, and enter Three-Dimensional Dynamic and focus on galvanometer and psychological field mirror far away, focus on silicon chip surface, the whole silicon wafer surface can process in this device, realizes no graphic joining high speed and precision scanning etching.
5. the equipment and the process of a kind of high speed and precision crystal silicon laser ablation as claimed in claim 1, it is characterized in that: among the described step B, when the laser high-speed precision sweep etching crystal silicon surface of high repetition frequency, low pulsewidth, simultaneously the free electron source is imported on the etched line and mix, this material source is that phosphoric acid or phosphorus slurry wait other semi-conducting material.
6. the equipment and the process of a kind of high speed and precision crystal silicon laser ablation as claimed in claim 1 is characterized in that: among the described step B, the laser facula of focusing is adjustable between 1～1000um.
7. the equipment and the process of a kind of high speed and precision crystal silicon laser ablation as claimed in claim 1, it is characterized in that: described etching material is the used monocrystalline silicon piece of solar energy industry, polysilicon chip or similar semi-conducting material, as to GaAs, semi-conducting materials such as silicon nitride.
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| CN102615433A (en) * | 2012-04-09 | 2012-08-01 | 镇江大成新能源有限公司 | Femtosecond laser etching process of thin-film solar cell |
| CN102626831A (en) * | 2012-04-09 | 2012-08-08 | 镇江大成新能源有限公司 | Femtosecond laser etching equipment of thin-film solar battery |
| CN102717190A (en) * | 2012-06-07 | 2012-10-10 | 江阴德力激光设备有限公司 | Device and method for pulse laser etching of conducting film on organic glass |
| CN102837125A (en) * | 2011-11-11 | 2012-12-26 | 中国科学院光电研究院 | Laser processing device |
| CN103361733A (en) * | 2013-06-21 | 2013-10-23 | 中山大学 | Light external coaxial ultrasonic spraying laser doping system |
| CN103646988A (en) * | 2013-11-06 | 2014-03-19 | 常州大学 | Method and device for performing laser one-time two-dimensional array punching on silicon wafer |
| CN103952767A (en) * | 2014-05-14 | 2014-07-30 | 浙江嘉泰激光科技有限公司 | Method for precisely processing sapphire through double-laser beam sequence scanning |
| CN104227243A (en) * | 2014-09-11 | 2014-12-24 | 深圳英诺激光科技有限公司 | Laser deep processing equipment and processing method for hard material |
| CN104396015A (en) * | 2012-05-03 | 2015-03-04 | 内克西斯公司 | Laser etching a stack of thin layers for a connection of a photovoltaic cell |
| CN104625438A (en) * | 2014-12-29 | 2015-05-20 | 中自高科（苏州）光电有限公司 | Method for manufacturing micro channel by combining laser polarization selective ablation with acid etching |
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| CN105954055A (en) * | 2016-04-27 | 2016-09-21 | 中国科学院合肥物质科学研究院 | Femtosecond excimer laser ablation sampling system |
| CN105990471A (en) * | 2015-02-04 | 2016-10-05 | 大族激光科技产业集团股份有限公司 | HIT solar cell edge isolation method |
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| CN109014629A (en) * | 2018-10-26 | 2018-12-18 | 上海费米激光科技有限公司 | A kind of four axis laser precision machining devices of micron of line width |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1104371A (en) * | 1993-11-05 | 1995-06-28 | 株式会社半导体能源研究所 | Method for processing semiconductor device, apparatus for processing a semiconductor and apparatus for processing semiconductor device |
| JP2007330995A (en) * | 2006-06-15 | 2007-12-27 | Ricoh Co Ltd | Laser beam machining apparatus, laser beam machining method, liquid droplet delivery head machined by the laser beam machining method, and image forming apparatus |
| US20080031291A1 (en) * | 2006-08-04 | 2008-02-07 | Disco Corporation | Laser beam irradiation apparatus and laser working machine |
| JP2010040922A (en) * | 2008-08-07 | 2010-02-18 | Mitsubishi Heavy Ind Ltd | Method of manufacturing photoelectric conversion device |
| WO2010099892A2 (en) * | 2009-03-02 | 2010-09-10 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Rear contact solar cells, and method for the production thereof |
-
2011
- 2011-04-02 CN CN2011100832199A patent/CN102201493A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1104371A (en) * | 1993-11-05 | 1995-06-28 | 株式会社半导体能源研究所 | Method for processing semiconductor device, apparatus for processing a semiconductor and apparatus for processing semiconductor device |
| JP2007330995A (en) * | 2006-06-15 | 2007-12-27 | Ricoh Co Ltd | Laser beam machining apparatus, laser beam machining method, liquid droplet delivery head machined by the laser beam machining method, and image forming apparatus |
| US20080031291A1 (en) * | 2006-08-04 | 2008-02-07 | Disco Corporation | Laser beam irradiation apparatus and laser working machine |
| JP2010040922A (en) * | 2008-08-07 | 2010-02-18 | Mitsubishi Heavy Ind Ltd | Method of manufacturing photoelectric conversion device |
| WO2010099892A2 (en) * | 2009-03-02 | 2010-09-10 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Rear contact solar cells, and method for the production thereof |
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| CN102837125A (en) * | 2011-11-11 | 2012-12-26 | 中国科学院光电研究院 | Laser processing device |
| CN102626831A (en) * | 2012-04-09 | 2012-08-08 | 镇江大成新能源有限公司 | Femtosecond laser etching equipment of thin-film solar battery |
| CN102615433A (en) * | 2012-04-09 | 2012-08-01 | 镇江大成新能源有限公司 | Femtosecond laser etching process of thin-film solar cell |
| CN104396015A (en) * | 2012-05-03 | 2015-03-04 | 内克西斯公司 | Laser etching a stack of thin layers for a connection of a photovoltaic cell |
| CN102717190A (en) * | 2012-06-07 | 2012-10-10 | 江阴德力激光设备有限公司 | Device and method for pulse laser etching of conducting film on organic glass |
| CN103361733A (en) * | 2013-06-21 | 2013-10-23 | 中山大学 | Light external coaxial ultrasonic spraying laser doping system |
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| CN103952767A (en) * | 2014-05-14 | 2014-07-30 | 浙江嘉泰激光科技有限公司 | Method for precisely processing sapphire through double-laser beam sequence scanning |
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| CN104227243A (en) * | 2014-09-11 | 2014-12-24 | 深圳英诺激光科技有限公司 | Laser deep processing equipment and processing method for hard material |
| CN104625438A (en) * | 2014-12-29 | 2015-05-20 | 中自高科（苏州）光电有限公司 | Method for manufacturing micro channel by combining laser polarization selective ablation with acid etching |
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| CN109014629A (en) * | 2018-10-26 | 2018-12-18 | 上海费米激光科技有限公司 | A kind of four axis laser precision machining devices of micron of line width |
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| CN110421265B (en) * | 2019-07-01 | 2021-06-01 | 中国科学院上海光学精密机械研究所 | Method and device for processing sub-wavelength periodic structures with different shapes by femtosecond laser |
| CN112404713A (en) * | 2019-08-23 | 2021-02-26 | 大族激光科技产业集团股份有限公司 | OLED laser welding system and temperature control method |
| CN112453692A (en) * | 2020-12-01 | 2021-03-09 | 强一半导体（苏州）有限公司 | MEMS probe laser etching method |
| CN112496556A (en) * | 2020-12-01 | 2021-03-16 | 强一半导体（苏州）有限公司 | MEMS probe laser etching motor and four-dimensional table driving method |
| WO2022116564A1 (en) * | 2020-12-01 | 2022-06-09 | 强一半导体（苏州）有限公司 | Mems probe laser etching method |
| CN113319434A (en) * | 2021-06-28 | 2021-08-31 | 苏州赛腾精密电子股份有限公司 | Laser line width adjusting method and laser marking device |
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Application publication date: 20110928 |