CN102201436A - Semiconductor structure and manufacturing method thereof - Google Patents
Semiconductor structure and manufacturing method thereof Download PDFInfo
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- CN102201436A CN102201436A CN2011101265542A CN201110126554A CN102201436A CN 102201436 A CN102201436 A CN 102201436A CN 2011101265542 A CN2011101265542 A CN 2011101265542A CN 201110126554 A CN201110126554 A CN 201110126554A CN 102201436 A CN102201436 A CN 102201436A
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Abstract
The invention provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure comprises an interface layer positioned on a substrate, a gate medium layer positioned on the interface layer, a metal gate electrode layer positioned on the gate medium layer, and at least one oxygen absorbing layer, wherein the combining capacity of metal atoms and oxygen in the oxygen absorbing layer is higher than the combining capacity of the atoms and oxygen in a laminating material under the oxygen absorbing layer. In the invention, the oxygen in the interface layer is absorbed by adding at least one oxygen absorbing layer, so that the aims of reducing the equivalent oxide layer thickness (EOT) and improving the performance of the device are fulfilled.
Description
Technical field
The present invention relates to the ic manufacturing technology field, particularly a kind of semiconductor structure and manufacture method thereof.
Background technology
In existing C MOS technology,, use high k (dielectric constant) gate dielectric material to substitute silica material usually as the cmos device gate medium in order to improve the performance of device.High-k gate dielectric material has the higher dielectric constant of ratio silicon oxide, can under the situation that does not reduce physical thickness, improve the size of gate capacitance, thereby under the situation that does not increase electric leakage, reduce equivalent oxide thickness (Equivalent Oxide Thickness, EOT), improve device performance.Further dwindling of device size requires EOT attenuate thereupon, and ITRS in 2009 requires 2016, and EOT is reduced to 0.5nm.But can produce thickness between high k material and the silicon substrate in the subsequent thermal annealing process procedure is the silicon-oxide interface layer of 1nm, because of its dielectric constant is lower, thereby has stoped further reducing of EOT, has hindered the further raising of device performance.
Summary of the invention
Purpose of the present invention is intended to solve at least one of above-mentioned technological deficiency.
For achieving the above object, one aspect of the present invention proposes a kind of semiconductor structure, comprising: substrate; Be positioned at the gate dielectric layer on the described substrate, and between described substrate and described gate dielectric layer, be formed with boundary layer; Be positioned at the metal gate electrode layer on the described gate dielectric layer; And one deck oxygen uptake layer at least, the binding ability of metallic atom and oxygen is higher than the binding ability of atom and oxygen in the laminated material of described oxygen uptake layer below in the wherein said oxygen uptake layer.
In one embodiment of the invention, wherein, described oxygen uptake layer is between described gate dielectric layer and described metal gate electrode layer, perhaps, described oxygen uptake layer is between described gate dielectric layer and described boundary layer, perhaps, described gate dielectric layer comprises the first grid dielectric layer and second gate dielectric layer, and described oxygen uptake layer is between described first grid dielectric layer and described second gate dielectric layer.
In one embodiment of the invention, the thickness of described oxygen uptake layer is to make that the oxygen in the described boundary layer is completely or partially adsorbed.
In one embodiment of the invention, described oxygen uptake layer comprises one or more in metal and the metal nitride.
In one embodiment of the invention, the dielectric constant of described metal and/or corresponding metal oxide of described metal nitride and/or metal oxynitride is greater than the dielectric constant of described boundary layer.
Described oxygen uptake layer is formed on the position of the close in a lateral direction source end of semiconductor structure; Perhaps, described oxygen uptake layer is formed on the position and the middle part of the close in a lateral direction source of semiconductor structure end; Perhaps, described oxygen uptake layer is formed on the position of close in a lateral direction source end of semiconductor structure and drain terminal; Perhaps, described oxygen uptake layer is formed on semiconductor structure middle part in a lateral direction.
The embodiment of the invention has also proposed a kind of manufacture method of semiconductor structure on the other hand, may further comprise the steps: substrate is set; On described substrate, form gate dielectric layer, and between described substrate and described gate dielectric layer, be formed with boundary layer; Form one deck oxygen uptake layer at least on described gate dielectric layer, the binding ability of metallic atom and oxygen is higher than the binding ability of atom and oxygen in the described gate dielectric layer of described oxygen uptake layer below and the boundary layer in the wherein said oxygen uptake layer; And on described oxygen uptake layer, form metal gate electrode layer.
In one embodiment of the invention, described oxygen uptake layer comprises one or more in metal and the metal nitride, and the dielectric constant of described metal and/or corresponding metal oxide of described metal nitride and/or metal oxynitride is greater than the dielectric constant of described boundary layer.
Described oxygen uptake layer is formed on the position of the close in a lateral direction source end of semiconductor structure; Perhaps, described oxygen uptake layer is formed on the position and the middle part of the close in a lateral direction source of semiconductor structure end; Perhaps, described oxygen uptake layer is formed on the position of close in a lateral direction source end of semiconductor structure and drain terminal; Perhaps, described oxygen uptake layer is formed on semiconductor structure middle part in a lateral direction.
The embodiment of the invention has also proposed a kind of manufacture method of semiconductor structure more on the one hand, may further comprise the steps: substrate is set; On described substrate, form one deck oxygen uptake layer at least, and be formed with boundary layer between described oxygen uptake layer of one deck at least and described substrate, the binding ability of metallic atom and oxygen is higher than the binding ability of atom and oxygen in the described boundary layer of described oxygen uptake layer below in the wherein said oxygen uptake layer; On described oxygen uptake layer, form gate dielectric layer; And on described gate dielectric layer, form metal gate electrode layer.
In one embodiment of the invention, described oxygen uptake layer comprises one or more in metal and the metal nitride, and the dielectric constant of described metal and/or corresponding metal oxide of described metal nitride and/or metal oxynitride is greater than the dielectric constant of described boundary layer.
Described oxygen uptake layer is formed on the position of the close in a lateral direction source end of semiconductor structure; Perhaps, described oxygen uptake layer is formed on the position and the middle part of the close in a lateral direction source of semiconductor structure end; Perhaps, described oxygen uptake layer is formed on the position of close in a lateral direction source end of semiconductor structure and drain terminal; Perhaps, described oxygen uptake layer is formed on semiconductor structure middle part in a lateral direction.
The embodiment of the invention has also proposed a kind of manufacture method of semiconductor structure more on the one hand, may further comprise the steps: substrate is set; On described substrate, form first grid dielectric layer, and between described first grid dielectric layer and described substrate, be formed with boundary layer; Form one deck oxygen uptake layer at least on described first grid dielectric layer, the binding ability of metallic atom and oxygen is higher than the binding ability of atom and oxygen in the described boundary layer of described oxygen uptake layer below and the described first grid dielectric layer in the wherein said oxygen uptake layer; On described oxygen uptake layer, form second gate dielectric layer; And on described second gate dielectric layer, form metal gate electrode layer.
In one embodiment of the invention, described oxygen uptake layer comprises one or more in metal and the metal nitride, and the dielectric constant of described metal and/or corresponding metal oxide of described metal nitride and/or metal oxynitride is greater than the dielectric constant of described boundary layer.
Described oxygen uptake layer is formed on the position of the close in a lateral direction source end of semiconductor structure; Perhaps, described oxygen uptake layer is formed on the position and the middle part of the close in a lateral direction source of semiconductor structure end; Perhaps, described oxygen uptake layer is formed on the position of close in a lateral direction source end of semiconductor structure and drain terminal; Perhaps, described oxygen uptake layer is formed on semiconductor structure middle part in a lateral direction.
The present invention makes that by increasing one deck oxygen uptake layer at least the oxygen in the boundary layer is adsorbed, and the interfacial layer thickness with low k value reduces, thereby reduces EOT (equivalent oxide thickness), improves the performance of device.
Aspect that the present invention adds and advantage part in the following description provide, and part will become obviously from the following description, or recognize by practice of the present invention.
Description of drawings
Above-mentioned and/or additional aspect of the present invention and advantage are from obviously and easily understanding becoming the description of embodiment below in conjunction with accompanying drawing, wherein:
Fig. 1 is the schematic diagram of the semiconductor structure of one embodiment of the invention;
Fig. 2 is the schematic diagram of the semiconductor structure of another embodiment of the present invention;
Fig. 3 is the schematic diagram of the semiconductor structure of another embodiment of the present invention;
Fig. 4 is the schematic diagram of oxygen uptake layer at the position of close in a lateral direction source end of semiconductor structure or drain terminal;
Fig. 5 is that the oxygen uptake layer is at the position of the close in a lateral direction source of semiconductor structure end and the schematic diagram of middle part; And
Fig. 6 is the schematic diagram of oxygen uptake layer at the position of close in a lateral direction source end of semiconductor structure and drain terminal;
Fig. 7 is the schematic diagram of oxygen uptake layer in semiconductor structure middle part in a lateral direction.
Embodiment
Describe embodiments of the invention below in detail, the example of described embodiment is shown in the drawings, and wherein identical from start to finish or similar label is represented identical or similar elements or the element with identical or similar functions.Below by the embodiment that is described with reference to the drawings is exemplary, only is used to explain the present invention, and can not be interpreted as limitation of the present invention.
Be illustrated in figure 1 as the schematic diagram of the semiconductor structure of one embodiment of the invention, this semiconductor structure upwards comprises successively from substrate 1: boundary layer 10, gate dielectric layer 20, oxygen uptake layer 31 and metal gate electrode layer 40.Wherein, the binding ability of metallic atom and oxygen is higher than the binding ability of atom and oxygen in the gate dielectric layer 20 of oxygen uptake layer 31 below and the boundary layer 10 in the oxygen uptake layer 31.
In the present embodiment, the thickness of oxygen uptake layer 31 is arranged so that and the oxygen in the boundary layer 10 partly can be adsorbed, and perhaps the oxygen in the boundary layer 10 is fully adsorbed, and specifically how much adsorbance need set and adjust according to process conditions.
The material of oxygen uptake layer 31 comprises one or more in metal and the metal nitride.Wherein, the dielectric constant of corresponding metal oxide of metal and/or metal nitride and/or metal oxynitride is greater than the dielectric constant of boundary layer 10.For example, Al, Er, Y or AlN etc.Should be understood that the ability to take oxygen difference of different materials, work function difference, the performance of the device of making are also different.
For realizing the foregoing description 1, the present invention also proposes a kind of method of making semiconductor structure, may further comprise the steps: substrate at first is set, forms gate dielectric layer then on substrate, wherein, be formed with boundary layer between gate dielectric layer and substrate.Afterwards, on gate dielectric layer, form the oxygen uptake layer, on the oxygen uptake layer, form metal gate electrode layer at last.Wherein, the binding ability of metallic atom and oxygen is higher than the binding ability of atom and oxygen in the gate dielectric layer of oxygen uptake layer below and the boundary layer in the oxygen uptake layer.Wherein, as one embodiment of the present of invention, the realization of gate dielectric layer or metal gate electrode layer can be a conventional technology such as ald (ALD), physical vapor deposition (PVD), chemical vapor deposition (CVD), the realization of oxygen uptake layer can employing and gate dielectric layer or metal gate electrode layer similar techniques realize the method that also can adopt ion to inject.Inject modes such as masking layer, oblique angle injection, photoetching by ion is set, can realize the lateral attitude of oxygen uptake layer and the accurate control of thickness, thereby can adjust the thickness or the position of oxygen uptake layer according to the device architecture needs.Herein for simplicity, repeat no more.
The thickness that it should be noted that the oxygen uptake layer need be arranged so that metal gate electrode layer can partly adsorb the oxygen in the boundary layer, has perhaps fully adsorbed the oxygen in the boundary layer.In addition, the dielectric constant of the metal oxide of the correspondence that forms after the metal that comprises of oxygen uptake layer and/or the metal nitride oxygen uptake and/or metal oxynitride should be greater than the dielectric constant of boundary layer.
Embodiment 2
Be illustrated in figure 2 as the schematic diagram of the semiconductor structure of another embodiment of the present invention, this semiconductor structure upwards comprises successively from substrate 1: boundary layer 10, oxygen uptake layer 32, gate dielectric layer 20 and metal gate electrode layer 40.
In the present embodiment oxygen uptake layer 32 be provided with similar to Example 1, herein for simplicity, repeat no more, different is, in the present embodiment, oxygen uptake layer 32 is formed on the boundary layer 10, and the binding ability of metallic atom and oxygen is higher than the binding ability of atom and oxygen in the boundary layer 10 of oxygen uptake layer 32 below in the oxygen uptake layer 32.
For realizing embodiment 2, the present invention also proposes the another kind of method of making semiconductor structure, may further comprise the steps: substrate at first is set, on substrate, form one deck oxygen uptake layer at least then, and be formed with boundary layer between one deck oxygen uptake layer and the substrate at least, wherein the binding ability of metallic atom and oxygen is higher than the binding ability of atom and oxygen in the boundary layer of oxygen uptake layer below in the oxygen uptake layer.Then, on the oxygen uptake layer, form gate dielectric layer, and on gate dielectric layer, form metal gate electrode layer.The dielectric constant that it should be noted that the metal oxide that forms after metal that the oxygen uptake layer comprises and/or the metal nitride oxygen uptake and/or metal oxynitride should be greater than the dielectric constant of boundary layer 10.Wherein, as one embodiment of the present of invention, the realization of gate dielectric layer or metal gate electrode layer can be a conventional technology such as ald (ALD), physical vapor deposition (PVD), chemical vapor deposition (CVD), the realization of oxygen uptake layer can employing and gate dielectric layer or metal gate electrode layer similar techniques realize the method that also can adopt ion to inject.Inject modes such as masking layer, oblique angle injection, photoetching by ion is set, can realize the lateral attitude of oxygen uptake layer and the accurate control of thickness, thereby can adjust the thickness or the position of oxygen uptake layer according to the device architecture needs.Herein for simplicity, repeat no more.
Embodiment 3
Be illustrated in figure 3 as the schematic diagram of the semiconductor structure of another embodiment of the present invention, this semiconductor structure upwards comprises successively from substrate 1: boundary layer 10, first grid dielectric layer 21, oxygen uptake layer 33, second gate dielectric layer 22 and metal gate electrode layer 40.
The setting of oxygen uptake layer 30 and embodiment 1 and embodiment 2 are similar in the present embodiment, herein for simplicity, repeat no more, different is, in the present embodiment, oxygen uptake layer 33 is formed between the first grid dielectric layer 21 and second gate dielectric layer 22, and the binding ability of metallic atom and oxygen is higher than the binding ability of atom and oxygen in the boundary layer 10 of oxygen uptake layer 33 below and the first grid dielectric layer 21 in the oxygen uptake layer 33, promptly oxygen uptake layer 33 need have than first grid dielectric layer 21 and boundary layer 10 stronger with the oxygen binding ability.
For realizing embodiment 3, the present invention also provides another to make the method for semiconductor structure, may further comprise the steps: substrate at first is set, forms first grid dielectric layer then on substrate, and be formed with boundary layer between first grid dielectric layer and substrate.Then, form one deck oxygen uptake layer at least on first grid dielectric layer, wherein the binding ability of metallic atom and oxygen is higher than the binding ability of atom and oxygen in the described boundary layer of oxygen uptake layer below and the described first grid dielectric layer in the oxygen uptake layer.Afterwards, on the oxygen uptake layer, form second gate dielectric layer, and on second gate dielectric layer, form metal gate electrode layer.The dielectric constant that it should be noted that the metal oxide that forms after metal that the oxygen uptake layer comprises and/or the metal nitride oxygen uptake and/or metal oxynitride should be greater than the dielectric constant of boundary layer 10.Wherein, as one embodiment of the present of invention, the realization of gate dielectric layer or metal gate electrode layer can be a conventional technology such as ald (ALD), physical vapor deposition (PVD), chemical vapor deposition (CVD), the realization of oxygen uptake layer can employing and gate dielectric layer or metal gate electrode layer similar techniques realize the method that also can adopt ion to inject.Inject modes such as masking layer, oblique angle injection, photoetching by ion is set, can realize the lateral attitude of oxygen uptake layer and the accurate control of thickness, thereby can adjust the thickness or the position of oxygen uptake layer according to the device architecture needs.Herein for simplicity, repeat no more.
Described each different example of the position of oxygen uptake layer on the semiconductor structure longitudinal direction above, in other embodiments of the invention, the oxygen uptake layer also can be different in semiconductor structure position in a lateral direction.
Be example with the embodiment 3 of oxygen uptake layer between the first grid dielectric layer 21 and second gate dielectric layer 22 below, illustrate that the oxygen uptake layer is in semiconductor structure change in location in a lateral direction.Should be understood that situation is similar, repeats no more for embodiment 1 and embodiment 2 herein.
Be illustrated in figure 4 as oxygen uptake layer 33 at the close in a lateral direction source end of semiconductor structure or the schematic diagram at drain terminal position, as shown in Figure 4, be provided with the oxygen uptake layer at the position of the close in a lateral direction source of semiconductor structure end.Certainly in other embodiments of the invention, also can be only near the position of drain terminal the oxygen uptake layer be set in a lateral direction, perhaps also can the oxygen uptake layer be set, and the oxygen uptake layer be set, as shown in Figure 5 at drain terminal at source end and middle part.As shown in Figure 6, be provided with the oxygen uptake layer at the close in a lateral direction source end of semiconductor structure and the position of drain terminal.Be illustrated in figure 7 as the schematic diagram of oxygen uptake layer, do not have oxygen uptake layer 33, only be provided with in the middle part at the position of the source of semiconductor structure end and drain terminal in semiconductor structure middle part in a lateral direction.
The foregoing description is schematic embodiment only, should be understood that one or more layers oxygen uptake layer can be set in semiconductor structure, thereby guarantees that the oxygen in the boundary layer is adsorbed more fully.
The present invention makes that by increasing one deck oxygen uptake layer at least the oxygen in the boundary layer is adsorbed, and reduces equivalent oxide thickness (EOT) thereby reach, and improves the purpose of device performance.
Although illustrated and described embodiments of the invention, for the ordinary skill in the art, be appreciated that without departing from the principles and spirit of the present invention and can carry out multiple variation, modification, replacement and modification that scope of the present invention is by claims and be equal to and limit to these embodiment.
Claims (15)
1. a semiconductor structure is characterized in that, comprising:
Substrate;
Be positioned at the gate dielectric layer on the described substrate, and between described substrate and described gate dielectric layer, be formed with boundary layer;
Be positioned at the metal gate electrode layer on the described gate dielectric layer; And
At least one deck oxygen uptake layer, the binding ability of metallic atom and oxygen is higher than the binding ability of atom and oxygen in the laminated material of described oxygen uptake layer below in the wherein said oxygen uptake layer.
2. semiconductor structure according to claim 1 is characterized in that, wherein,
Described oxygen uptake layer between described gate dielectric layer and described metal gate electrode layer,
Perhaps, described oxygen uptake layer between described gate dielectric layer and described boundary layer,
Perhaps, described gate dielectric layer comprises the first grid dielectric layer and second gate dielectric layer, and described oxygen uptake layer is between described first grid dielectric layer and described second gate dielectric layer.
3. semiconductor structure according to claim 1 is characterized in that, the thickness of described oxygen uptake layer is to make that the oxygen in the described boundary layer is completely or partially adsorbed.
4. semiconductor structure according to claim 1 is characterized in that, described oxygen uptake layer comprises one or more in metal and the metal nitride.
5. semiconductor structure according to claim 4 is characterized in that, the dielectric constant of described metal and/or corresponding metal oxide of described metal nitride and/or metal oxynitride is greater than the dielectric constant of described boundary layer.
6. semiconductor structure according to claim 1 is characterized in that, wherein,
Described oxygen uptake layer is formed on the position of the close in a lateral direction source end of semiconductor structure;
Perhaps, described oxygen uptake layer is formed on the position and the middle part of the close in a lateral direction source of semiconductor structure end;
Perhaps, described oxygen uptake layer is formed on the position of close in a lateral direction source end of semiconductor structure and drain terminal;
Perhaps, described oxygen uptake layer is formed on semiconductor structure middle part in a lateral direction.
7. the manufacture method of a semiconductor structure is characterized in that, may further comprise the steps:
Substrate is set;
On described substrate, form gate dielectric layer, and between described substrate and described gate dielectric layer, be formed with boundary layer;
Form one deck oxygen uptake layer at least on described gate dielectric layer, wherein, the binding ability of metallic atom and oxygen is higher than the binding ability of atom and oxygen in the described gate dielectric layer of described oxygen uptake layer below and the boundary layer in the described oxygen uptake layer; And
On described oxygen uptake layer, form metal gate electrode layer.
8. the manufacture method of semiconductor structure according to claim 7, it is characterized in that, described oxygen uptake layer comprises one or more in metal and the metal nitride, and the dielectric constant of described metal and/or corresponding metal oxide of described metal nitride and/or metal oxynitride is greater than the dielectric constant of described boundary layer.
9. the manufacture method of semiconductor structure according to claim 7 is characterized in that, wherein,
Described oxygen uptake layer is formed on the position of the close in a lateral direction source end of semiconductor structure;
Perhaps, described oxygen uptake layer is formed on the position and the middle part of the close in a lateral direction source of semiconductor structure end;
Perhaps, described oxygen uptake layer is formed on the position of close in a lateral direction source end of semiconductor structure and drain terminal;
Perhaps, described oxygen uptake layer is formed on semiconductor structure middle part in a lateral direction.
10. the manufacture method of a semiconductor structure is characterized in that, may further comprise the steps:
Substrate is set;
On described substrate, form one deck oxygen uptake layer at least, and be formed with boundary layer between described oxygen uptake layer of one deck at least and described substrate, the binding ability of metallic atom and oxygen is higher than the binding ability of atom and oxygen in the described boundary layer of described oxygen uptake layer below in the wherein said oxygen uptake layer;
On described oxygen uptake layer, form gate dielectric layer; And
On described gate dielectric layer, form metal gate electrode layer.
11. the manufacture method of semiconductor structure according to claim 10, it is characterized in that, described oxygen uptake layer comprises one or more in metal and the metal nitride, and the dielectric constant of described metal and/or corresponding metal oxide of described metal nitride and/or metal oxynitride is greater than the dielectric constant of described boundary layer.
12. the manufacture method of semiconductor structure according to claim 10 is characterized in that, wherein,
Described oxygen uptake layer is formed on the position of the close in a lateral direction source end of semiconductor structure;
Perhaps, described oxygen uptake layer is formed on the position and the middle part of the close in a lateral direction source of semiconductor structure end;
Perhaps, described oxygen uptake layer is formed on the position of close in a lateral direction source end of semiconductor structure and drain terminal;
Perhaps, described oxygen uptake layer is formed on semiconductor structure middle part in a lateral direction.
13. the manufacture method of a semiconductor structure is characterized in that, may further comprise the steps:
Substrate is set;
On described substrate, form first grid dielectric layer, and between described first grid dielectric layer and described substrate, be formed with boundary layer;
Form one deck oxygen uptake layer at least on described first grid dielectric layer, the binding ability of metallic atom and oxygen is higher than the binding ability of atom and oxygen in the described boundary layer of described oxygen uptake layer below and the described first grid dielectric layer in the wherein said oxygen uptake layer;
On described oxygen uptake layer, form second gate dielectric layer; And
On described second gate dielectric layer, form metal gate electrode layer.
14. the manufacture method of semiconductor structure according to claim 13, it is characterized in that, described oxygen uptake layer comprises one or more in metal and the metal nitride, and the dielectric constant of described metal and/or corresponding metal oxide of described metal nitride and/or metal oxynitride is greater than the dielectric constant of described boundary layer.
15. the manufacture method of semiconductor structure according to claim 13 is characterized in that, wherein,
Described oxygen uptake layer is formed on the position of the close in a lateral direction source end of semiconductor structure;
Perhaps, described oxygen uptake layer is formed on the position and the middle part of the close in a lateral direction source of semiconductor structure end;
Perhaps, described oxygen uptake layer is formed on the position of close in a lateral direction source end of semiconductor structure and drain terminal;
Perhaps, described oxygen uptake layer is formed on semiconductor structure middle part in a lateral direction.
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| CN2011101265542A CN102201436A (en) | 2011-05-16 | 2011-05-16 | Semiconductor structure and manufacturing method thereof |
| US13/202,411 US8860143B2 (en) | 2011-05-16 | 2011-08-02 | High-K gate dielectric with work function adjustment metal layer |
| PCT/CN2011/077934 WO2012155392A1 (en) | 2011-05-16 | 2011-08-02 | Semiconductor structure and method for forming the same |
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| CN2011101265542A CN102201436A (en) | 2011-05-16 | 2011-05-16 | Semiconductor structure and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1949532A (en) * | 2005-10-12 | 2007-04-18 | 财团法人工业技术研究院 | Semiconductor structure and mfg. method thereof |
| CN101656214A (en) * | 2008-08-21 | 2010-02-24 | 台湾积体电路制造股份有限公司 | Semiconductor element and manufacturing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1949532A (en) * | 2005-10-12 | 2007-04-18 | 财团法人工业技术研究院 | Semiconductor structure and mfg. method thereof |
| CN101656214A (en) * | 2008-08-21 | 2010-02-24 | 台湾积体电路制造股份有限公司 | Semiconductor element and manufacturing method |
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Application publication date: 20110928 |