CN102198954A - Impurity control method for sintered body magnesium oxide target - Google Patents
Impurity control method for sintered body magnesium oxide target Download PDFInfo
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- CN102198954A CN102198954A CN 201110101477 CN201110101477A CN102198954A CN 102198954 A CN102198954 A CN 102198954A CN 201110101477 CN201110101477 CN 201110101477 CN 201110101477 A CN201110101477 A CN 201110101477A CN 102198954 A CN102198954 A CN 102198954A
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- magnesium oxide
- oxide target
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- sodium
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Abstract
The invention discloses an impurity control method for a sintered body magnesium oxide target, which comprises the following steps of: mixing one or more of magnesium oxide, magnesium hydroxide, alkaline magnesium carbonate and magnesium carbonate serving as raw materials and a sodium-containing or potassium-containing compound, and sintering at a low temperature to obtain the magnesium oxide target. The method has the advantages that: the purity of powder is further improved through impurity control on the basis of high purity, and the quality of the target is improved; and the quality of a magnesium oxide protective film is an important parameter for determining the energy consumption and service life of a plasma television, so the quality of the plasma television is indirectly improved. The method has high economic value and social value.
Description
Technical field
The invention belongs to the fine chemical technology field, relate to the Control of Impurities technology of high pure oxide powder, specially refer to a kind of Control of Impurities method of sintered compact magnesium oxide target.
Background technology
Magnesium oxide material possesses: by ion sputtering cause with low uncertainty; The secondary electron yield height; It is low that voltage is kept in discharge inception voltage (firing voltage) and discharge; The perviousness height; A series of advantageous characteristic such as insulativity height are widely used as protecting materials.And the firing voltage that reduces the PDP screen is an important topic of PDP industry always.
The impurity of sintered compact magnesium oxide target is an important parameter that affects ignition voltage; the difficulty volatilization trace metal impurities (≤0.005%) that mixes target is as iron, aluminium, manganese, copper etc.; can improve the firing voltage and the discharge of PDP screen greatly and keep voltage; have a strong impact on the quality of magnesium oxide protective membrane; and the energy consumption of increase plasma TV; also can reduce its work-ing life, so want the foreign matter content of strict control sintered compact magnesium oxide target.
Therefore, sintered compact magnesium oxide target impurity not only will be controlled in technological process, also will be in the source in addition strict control.The source control method of using mainly contains magnetic method and acid wash at present, but uses magnetic method can not reach the ideal treatment effect separately; And acid wash, not only workload is big but also complex process.At these problems, the present invention proposes a kind of Control of Impurities method of sintered compact magnesium oxide target of practicality, adopts mixing low temp agglomerating method, remove the difficulty volatilization metallic impurity of trace in the material powder, and this technology is not appeared in the newspapers.This method technology is simple, and the content of impurity can reduce an order of magnitude, has very high economic technology and is worth.
Summary of the invention
The Control of Impurities method that the purpose of this invention is to provide a kind of sintered compact magnesium oxide target can obtain the pure raw material of sintered compact magnesium oxide target by this method, at the foreign matter content of source control sintered compact magnesium oxide target, guarantees the purity of target.Powder behind this external purifying can be directly as product in market sale, and the powder of this purity is the scarce resource on the market.
Technical scheme of the present invention is, with magnesium oxide, magnesium hydroxide, magnesium basic carbonate or magnesiumcarbonate is raw material, after the compound that contains sodium or potassium mixes, carry out sintering at low temperatures, be accompanied by the volatilization of volatile metallic element potassium or sodium, difficult volatilization metallic element can be taken out of from powder, as the first step of making sintered compact magnesium oxide target technology, reaches the purpose of purification with this.
The Control of Impurities method of a kind of sintered compact magnesium oxide target provided by the invention, with in magnesium oxide, magnesium hydroxide, magnesium basic carbonate or the magnesiumcarbonate one or more is raw material, and with raw material with after the compound that contains sodium or potassium mixes, carry out sintering at low temperatures, obtain the magnesium oxide target.
Wherein, the described compound of sodium or potassium that contains is for containing sodium and/or potassium carbonate, oxyhydroxide and organic salt.
Wherein, raw material with the blending ratio of the compound of sodium or potassium is: raw material is become corresponding oxide with the chemical compound conversion of sodium or potassium, and scope is at 0.5 to 2 weight %.
Wherein, described sintering range is between 1000 to 1400 ℃.
Wherein, constant temperature time is between 1.5 to 8 hours.
Effect of the present invention and benefit are; control by impurity; on high-purity basis, further improve powder purity; promoted the quality of target; because magnesium oxide protective membrane quality is the decision plasma TV energy consumption and the important parameter in work-ing life, this Control of Impurities method has improved the quality of plasma TV again indirectly again.The present invention has good economic worth and social value.
Embodiment
Be described in detail the specific embodiment of the present invention below in conjunction with technical scheme.
The Control of Impurities method of a kind of sintered compact magnesium oxide target among the present invention is kind and formula rate, sintering temperature and the constant temperature time of raw materials used, as to contain volatile metallic element material.
The raw material that the present invention handles is chosen in magnesium oxide, magnesium hydroxide, magnesium basic carbonate or magnesiumcarbonate, also can be two or more the mixture among them; Volatile Elements is potassium and sodium, and material is its carbonate, oxyhydroxide and organic salt; Calculate blending ratio and all should be converted to corresponding oxide, scope is at 0.5 to 2 weight %; Sintering range changes between 1000 to 1400 ℃, and constant temperature time changed between 1.5 to 8 hours.
The technical process of its making method is as follows: step 1: above-mentioned magnesia compound and selected material are mixed in proportion; Step 2: mixed material is placed in the crucible, and sintering temperature and constant temperature time are chosen in the scope in the above, and simple grinding the in cooling back sieved, and obtains the pure raw material of sintered compact target.
Example 1
With magnesium oxide (wherein the magnesium oxide quality is than 99.95%), get 0.96kg magnesium oxide, 0.05kg Sodium dodecylbenzene sulfonate uniform mixing respectively; Under 1200 ℃, constant temperature 2 hours can obtain 99.995% high purity magnesium oxide with mixed material.
Above content be in conjunction with optimal technical scheme to further describing that the present invention did, can not assert that the concrete enforcement of invention only limits to these explanations.Concerning the general technical staff of the technical field of the invention, under the prerequisite that does not break away from design of the present invention, can also make simple deduction and replacement, all should be considered as protection scope of the present invention.
Claims (5)
1. the Control of Impurities method of a sintered compact magnesium oxide target, it is characterized in that, be raw material with in magnesium oxide, magnesium hydroxide, magnesium basic carbonate or the magnesiumcarbonate one or more, and with raw material with after the compound that contains sodium or potassium mixes, carry out sintering at low temperatures, obtain the magnesium oxide target.
2. the Control of Impurities method of sintered compact magnesium oxide target according to claim 1 is characterized in that, the described compound of sodium or potassium that contains is for containing sodium and/or potassium carbonate, oxyhydroxide and organic salt.
3. the Control of Impurities method of sintered compact magnesium oxide target according to claim 1 and 2 is characterized in that, raw material with the blending ratio of the compound of sodium or potassium is: raw material is become corresponding oxide with the chemical compound conversion of sodium or potassium, and scope is at 0.5 to 2 weight %.
4. the Control of Impurities method of sintered compact magnesium oxide target according to claim 3 is characterized in that, described sintering range is between 1000 to 1400 ℃.
5. the Control of Impurities method of sintered compact magnesium oxide target according to claim 3 is characterized in that, constant temperature time is between 1.5 to 8 hours.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110101477 CN102198954A (en) | 2011-04-22 | 2011-04-22 | Impurity control method for sintered body magnesium oxide target |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110101477 CN102198954A (en) | 2011-04-22 | 2011-04-22 | Impurity control method for sintered body magnesium oxide target |
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| CN102198954A true CN102198954A (en) | 2011-09-28 |
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| CN 201110101477 Pending CN102198954A (en) | 2011-04-22 | 2011-04-22 | Impurity control method for sintered body magnesium oxide target |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103030380A (en) * | 2011-09-30 | 2013-04-10 | 沈阳临德陶瓷研发有限公司 | Method for preparing hot pressed sintered high-density magnesium oxide target |
| CN103814152A (en) * | 2011-12-27 | 2014-05-21 | 吉坤日矿日石金属株式会社 | Sintered magnesium oxide target for sputtering, and method for producing same |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005118504A1 (en) * | 2004-06-04 | 2005-12-15 | Tateho Chemical Industries Co., Ltd. | Single-crystal magnesium oxide sinter, process for producing the same, and protective film for plasma display panel |
| JP2007254250A (en) * | 2006-03-27 | 2007-10-04 | Tateho Chem Ind Co Ltd | Highly pure magnesium hydroxide powder and method for producing the same |
| CN101687659A (en) * | 2007-06-27 | 2010-03-31 | 达泰豪化学工业株式会社 | Magnesium oxide particle aggregate, and method for production thereof |
| CN101885497A (en) * | 2010-07-17 | 2010-11-17 | 天津市化学试剂研究所 | Method for preparing spectrally pure magnesium oxide |
| CN101993098A (en) * | 2010-11-23 | 2011-03-30 | 中国科学院过程工程研究所 | Method for preparing high-purity magnesium oxide from nesquehonite by carbon-ammonia recycle method |
-
2011
- 2011-04-22 CN CN 201110101477 patent/CN102198954A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005118504A1 (en) * | 2004-06-04 | 2005-12-15 | Tateho Chemical Industries Co., Ltd. | Single-crystal magnesium oxide sinter, process for producing the same, and protective film for plasma display panel |
| JP2007254250A (en) * | 2006-03-27 | 2007-10-04 | Tateho Chem Ind Co Ltd | Highly pure magnesium hydroxide powder and method for producing the same |
| CN101687659A (en) * | 2007-06-27 | 2010-03-31 | 达泰豪化学工业株式会社 | Magnesium oxide particle aggregate, and method for production thereof |
| CN101885497A (en) * | 2010-07-17 | 2010-11-17 | 天津市化学试剂研究所 | Method for preparing spectrally pure magnesium oxide |
| CN101993098A (en) * | 2010-11-23 | 2011-03-30 | 中国科学院过程工程研究所 | Method for preparing high-purity magnesium oxide from nesquehonite by carbon-ammonia recycle method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103030380A (en) * | 2011-09-30 | 2013-04-10 | 沈阳临德陶瓷研发有限公司 | Method for preparing hot pressed sintered high-density magnesium oxide target |
| CN103814152A (en) * | 2011-12-27 | 2014-05-21 | 吉坤日矿日石金属株式会社 | Sintered magnesium oxide target for sputtering, and method for producing same |
| US9988709B2 (en) | 2011-12-27 | 2018-06-05 | Jx Nippon Mining & Metals Corporation | Sintered compact magnesium oxide target for sputtering, and method for producing same |
| US10066290B1 (en) | 2011-12-27 | 2018-09-04 | Jx Nippon Mining & Metals Corporation | Sintered compact magnesium oxide target for sputtering, and method for producing same |
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Application publication date: 20110928 |