CN102194954A - Semiconductor light-emitting device, lighting instrument employing the same and process for production of the semiconductor light-emitting device - Google Patents
Semiconductor light-emitting device, lighting instrument employing the same and process for production of the semiconductor light-emitting device Download PDFInfo
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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Abstract
The invention relates to a semiconductor light-emitting device, a lighting instrument employing the same and a process for production of the semiconductor light-emitting device. The semiconductor light-emitting device according to the embodiment includes a substrate, a compound semiconductor layer, a metal electrode layer provided with particular openings, a light-extraction layer, and a counter electrode. The light-extraction layer has a thickness of 20 to 120 nm and covers at least partly the metal part of the metal electrode layer; or otherwise the light-extraction layer has a rugged structure and covers at least partly the metal part of the metal electrode layer. The rugged structure has projections so arranged that their summits are positioned at intervals of 100 to 600 nm, and the heights of the summits from the surface of the metal electrode layer are 200 to 700 nm.
Description
The intersection of related application is drawn
The application is based on the Japanese patent application formerly 2010-52809 number submitted on March 10th, 2010 and require its priority; Incorporate its full content into as a reference at this.
Technical field
The application's embodiment relates to a kind of light emitting semiconductor device, and it has the metal electrode that has been equipped with opening.
Background technology
Recently, light emitting semiconductor device has been studied and has been used for display or light-emitting device.Light emitting semiconductor device generally includes electrode and the semiconductor layer between electrode, and luminous when electric current flows through between electrode.Usually, this device has the pad electrode with the semiconductor layer ohmic contact, and when electric current flowed, light sent around pad electrode.If as light-emitting device, then luminescent device is preferably formed relatively largely.But, enlarge pad electrode and be unprofitable to enlarge luminous component, therefore, in fact the fine rule electrode also from pad electrode along the semiconductor layer surface setting, so that enlarge luminous component.On the other hand, if draw together exhibition fine rule electrode, then can cause the electrode structure complicated problems usually.
Consider that from the viewpoint that is applied to light-emitting device also can be thought of as device provides the electric current of q.s with the intensity that highlights.In having comprised the conventional light emitting semiconductor device of pad electrode, intensity of brightness increases when electric current increases up to a certain numerical value, and then, intensity is issued to peak value at a certain current value.Surpass this numerical value even electric current increases, intensity of brightness can not increase on the contrary and can descend.Cause the main cause of this phenomenon to be that the big electric current that flows in the device can produce too many heat and consequently can not fully cool off.Therefore, in order to strengthen the intensity of brightness of conventional device, first-selected is abundant cooling device.In order to tackle this problem, suggestion provides heat sink substrate on the device bottom.But this mode is not very effective at present, and this is because this substrate is provided with too far from heating part.
Description of drawings
The sectional view of the schematically illustrated semiconductor device according to first embodiment of Figure 1A.
The sectional view of the schematically illustrated semiconductor device according to second embodiment of Figure 1B.
Fig. 1 C is the plane graph that metal electrode structure schematically is described.
Fig. 2 A to E conceptually illustrates the method for the semiconductor device that is used to make example 1.
Fig. 3 A illustrates the curve chart of the voltage-current characteristic of semiconductor device.
Fig. 3 B illustrates the curve chart of the electric current-power characteristic of semiconductor device.
Fig. 4 A to G conceptually illustrates the method for the semiconductor device that is used to make example 2.
Fig. 5 is the curve chart that the power-current characteristic of semiconductor device is shown.
Fig. 6 A to H conceptually illustrates the method for the semiconductor device that is used to make example 10.
Fig. 7 A to J conceptually illustrates the method for the semiconductor device that is used to make example 11.
Fig. 8 A to G conceptually illustrates the method for the semiconductor device that is used to make example 12.
Fig. 9 A to H conceptually illustrates the method for the semiconductor device that is used to make example 13.
Figure 10 A to G conceptually illustrates the method for the semiconductor device that is used to make example 14.
Figure 11 A to H conceptually illustrates the method for the semiconductor device that is used to make example 15.
Figure 12 A to F conceptually illustrates the method for the semiconductor device that is used to make example 16.
Figure 13 A to G conceptually illustrates the method for the semiconductor device that is used to make example 17.
Figure 14 A to G conceptually illustrates the method for the semiconductor device that is used to make example 18.
Figure 15 A to H conceptually illustrates the method for the semiconductor device that is used to make example 19.
Summary of the invention
Light emitting semiconductor device according to embodiment comprises substrate, compound semiconductor layer, has been equipped with metal electrode layer, light-extraction layer and the counterelectrode of certain openings (counter electrode).Light-extraction layer has the thickness that is not less than 20nm but is not more than 120nm, and covers the metal part of metal electrode layer at least in part; Or it is opposite, light-extraction layer has fine pleated structure and covers the metal part of metal electrode layer at least in part, and pleated structure has projection, this projection is set to spacing between their summit and is not less than 100nm but is not more than 600nm, and these summits height of starting at from the surface of metal electrode layer is not less than 200nm but is not more than 700nm.
Below will describe embodiment in detail.
Light emitting semiconductor device according to first embodiment comprises:
Substrate,
Compound semiconductor layer, it is formed on the surface of described substrate,
Metal electrode layer, it is formed on the described compound semiconductor layer, and has the thickness that is not less than 10nm but is not more than 50nm,
Light-extraction layer, it is formed on the described metal electrode layer, and
Counterelectrode, it is formed on another surface of described substrate;
Wherein,
Described metal electrode layer comprises:
The metal part, it is continuous, so that wherein any a pair of some position all be to connect continuously and do not disconnect, and
A plurality of openings pass that described metal electrode layer and its equivalent diameter are not less than 10nm but less than 5 μ m; And
Described light-extraction layer covers the metal part of described metal electrode layer at least in part, and has the thickness that is not less than 20nm but is not more than 120nm.
In addition, the light emitting semiconductor device according to second embodiment comprises:
Substrate,
Compound semiconductor layer, it is formed on the surface of described substrate,
Metal electrode layer, it is formed on the described compound semiconductor layer, and has the thickness that is not less than 10nm but is not more than 50nm,
Light-extraction layer, it is formed on the described metal electrode layer, and has fine pleated structure (ruggedstructure), and
Counterelectrode, it is formed on another surface of described substrate;
Wherein,
Described metal electrode layer comprises:
The metal part, it is continuous, so that wherein any a pair of some position all be to connect continuously and do not disconnect, and
A plurality of openings pass that described metal electrode layer and its equivalent diameter are not less than 10nm but less than 5 μ m; And
Described light-extraction layer covers the metal part of described metal electrode layer at least in part, and its fine pleated structure has projection, this projection is set to spacing between their summit and is not less than 100nm but is not more than 600nm, and these summits height of starting at from the surface of described metal electrode layer is not less than 200nm but is not more than 700nm.
In addition, a kind of light-emitting device according to embodiment comprises above-mentioned light emitting semiconductor device.
In addition, according to embodiment, a kind of method that is used to make arbitrary above-mentioned light emitting semiconductor device comprises the steps:
On substrate, form compound semiconductor layer,
On described compound semiconductor layer, form metal electrode layer,
On described metal electrode layer, form light-extraction layer, and
On the side opposite of described substrate, form counter electrode layer with described compound semiconductor layer; Wherein,
The step of described formation metal electrode layer further comprises following substep:
Form thin metal layer,
Apply at least a portion of described thin metal layer with the synthetic that comprises block copolymer, forming block copolymer film,
Described block copolymer is separated, and is the film micro area (microdomain) of dot pattern with the formation form, and
Utilize described point-like figure film micro area to come the described thin metal layer of etching, to form the described metal electrode layer that is equipped with opening as etching mask.
In addition, according to embodiment, a kind of other method that is used to make arbitrary above-mentioned light emitting semiconductor device comprises the steps:
On substrate, form compound semiconductor layer,
On described compound semiconductor layer, form metal electrode layer,
On described metal electrode layer, form light-extraction layer, and
On the side opposite of described substrate, form counter electrode layer with described compound semiconductor layer; Wherein,
The step of described formation metal electrode layer further comprises following substep:
Form thin metal layer,
Preparation pressing mold (stamper), its surface has the fine relief pattern of the shape of the described metal electrode layer that forms corresponding to hope,
Utilize described pressing mold that resist pattern is transferred at least a portion of described thin metal layer, and
Utilize described resist pattern on described thin metal layer, to form opening as etching mask.
Embodiment
Explain each embodiment referring now to accompanying drawing.
Metal material according to the metal electrode layer of embodiment there is not particular restriction, as long as it has enough electricity and heat conductivity.Therefore, can adopt any metal that is generally used for electrode.But in view of absorption loss, it is that 90wt% or more Au or Ag are as underlying metal that metal electrode layer for example preferably comprises total amount.In addition, in view of guaranteeing ohmic contact and thermal endurance, metal electrode layer also preferably comprises at least a metal that is selected from the group of being made up of Al, Zn, Zr, Si, Ge, Pt, Rh, Ni, Pd, Cu, Sn, C, Mg, Cr, Te, Se and Ti.
Metal electrode layer according to the semiconductor device of embodiment is equipped with a plurality of openings that pass this layer.Because metal electrode layer may form and occupy than large tracts of land,, raise to avoid device temperature so it can have sufficiently high heat-sinking capability.And it also may avoid temperature to raise with being provided with by the size of control opening.Particularly, can control the size of opening and setting so that the forward voltage of light emitting semiconductor device reduces, and therefore reduce series resistance, make to reduce the heat that itself produces.In order to reach this effect, preferred electric current evenly flows through the whole surface of compound semiconductor layer from the metal electrode layer that has been equipped with opening.Therefore, need the size of control opening and the spacing of their center to center, so that electric current can evenly flow in the entire compound semiconductor layer.According to the research of calculating, for example emulation shows that electric current flows from the edge of metal electrode layer begins zone in about 5 mu m ranges, though this depends on the doping content of the semiconductor layer that electric current wherein flows.Therefore, if opening has greater than above-mentioned equivalent diameter, the zone that does not have electric current to flow will appear then.Therefore, in this case, series resistance can not be reduced, and therefore forward voltage can not be reduced.In fact, for the light emitting semiconductor device that comprises the cancellated metal electrode with 5 μ m or bigger mesh, also report has not reduced forward voltage (referring to Jpn.J.Appl.Phys.Vol.41 (2002) pp.L1431-L1433).Therefore, opening has 5 μ m or littler, preferred 1 μ m or littler equivalent diameter.In addition, consider from the viewpoint of resistance, the lower limit of diameter without limits, but in view of the easy degree of making, equivalent diameter is generally 10nm or bigger, preferred 30nm or bigger." equivalent diameter " described here by the area of each opening according to formula: 2 * (area/n) 1/2 draw, therefore, if all openings all are circular, it is corresponding to average diameter.
Metal electrode layer among the embodiment comprises the metal part, and metal partly is continuous, so that wherein any a pair of some position all is to connect continuously and do not disconnect.This is because will keep low resistance, as mentioned above.
The continuity of metal part also is very important, so that device can be luminous from the entire compound semiconductor layer.Metal electrode layer preferably has 10 Ω/ or littler, more preferably has 5 Ω/ or littler sheet resistance (sheet resistance).Sheet resistance is more little, and then the heat of device generation is few more, and therefore can present the more significant effect of embodiment.
Usually, as follows metal electrode is formed on the semiconductor layer: on semiconductor layer, form metal level, and then dopant is mixed in the interface between the metal level and semiconductor layer, to form ohmic contact by heat treatment.For example, in making conventional emitting red light device, the method that forms electrode comprises the steps: to form the Au/Au-Zn (dopant that is used for the p layer) of hierarchy on the compound semiconductor layer of GaAs, GaP etc., and in the into metal-semiconductor interface of then Zn being mixed, to form ohmic contact.In an embodiment, metal level forms in the same manner, then, provides opening in the mode that describes below thereon, thereby forms metal electrode layer.If metal electrode layer is too thin, then the amount of dopant consequently can not obtain abundant doping usually very little.Therefore in this case, can not realize sufficient ohmic contact, and increase resistance thus.Our test has disclosed metal electrode layer must have 10nm or bigger, and preferred 30nm or bigger thickness are so that obtain sufficient ohmic contact.In addition, based on consideration, to the upper limit of thickness without limits, but consider and guarantee transmissivity, then preferred 50nm or littler thickness resistance.
Because metal electrode layer has been equipped with above-mentioned fine opening, so the light emitting semiconductor device of embodiment shows excellence aspect electrology characteristic and thermal characteristics.But, covered because luminescent layer has the metal level of relatively low transmissivity, so be difficult to extract fully the light that sends from luminescent layer.Therefore, expectation increases the amount by the light of metal electrode layer.
In order to increase amount, can consider on metal electrode layer, to form light-extraction layer by the light of electrode layer.Light-extraction layer must be dielectric or the conductive membrane with high-transmission rate.Particularly, light-extraction layer have to the light wavelength sent from luminescent layer preferred 50% or bigger, more preferably 60% or bigger light transmission.If light-extraction layer has the refractive index of the current extending that is higher than the surface that is positioned at luminescent layer, then can reduce reflection loss.Therefore, light-extraction layer has and is not less than 1.8 refractive index.And semiconductor device is had the resin-sealed of about 1.5 refractive index usually in last manufacturing step, and if therefore have and be lower than 1.5 refractive index, then light-extraction layer can not provide beneficial effect usually.But on the other hand, refractive index preferably is no more than 2.5.If refractive index is too big, when device is had about 1.5 refractive index resin-sealed, then can reduce beneficial effect.This is because the refractive index between light-extraction layer and the sealing resin differs too big.In this case, need to adjust the thickness of light-extraction layer usually.Because it is about 2.5 that the refractive index of available high dielectric material can reach, so in fact be difficult to utilize the refractive index materials that has greater than 2.5.The example that can be used for the suitable material of light-extraction layer comprises SiN, SiON, Ta
2O
5, TiO
2, ZnS, ZrO
2, Y
2O
3, ITO, Ce
2O
3And ZnO.
Light-extraction layer has the thickness that is not less than 20nm but is not more than 120nm.If thickness less than 20nm, then can not obtain beneficial effect usually.And, if thickness is improper, then under radiative wavelength, can reduce to reduce the effect of reflection loss.Given this, required thickness is not more than 120nm.Light-extraction layer need not to cover the entire electrode layer, but can cover the part of metal electrode layer.Particularly, light-extraction layer has increased the amount of the light that passes metal electrode layer by utilizing refractive index difference at the interface between light-extraction layer and the metal electrode layer, therefore even and light-extraction layer only partly covers the metal part of metal electrode layer, still can produce beneficial effect.Therefore, even opening is not covered fully, beneficial effect can not change yet.Unless definition especially in an embodiment, then " thickness " of light-extraction layer is meant from the surface of light-extraction layer the surface of compound semiconductor layer or to the distance on the surface of contact layer.Compound semiconductor layer or contact layer contact with metal electrode layer.Should be noted in the discussion above that the thickness of light-extraction layer is not arranged on the degree of depth of the layer on the metal electrode layer.In other words, the thickness of light-extraction layer is not to the distance on the surface of metal electrode layer from the surface of light-extraction layer.Therefore, in an embodiment, the thickness of light-extraction layer is not less than the thickness of metal electrode layer.
In order to increase the amount by the light of metal electrode layer, the light-extraction layer with fine pleated structure can be formed on the metal electrode layer.Fine pleated structure provides such as antireflection and diffracting effect, and it can reduce the reflection loss at the interface between metal electrode layer and the light-extraction layer, and therefore can increase the amount of the light that passes metal electrode layer.In order to realize these effects, pleated structure need comprise projection, this projection is set to spacing between their summit and is not less than 100nm but is not more than 600nm, and these summits height of starting at from the surface of metal electrode layer must be not less than 200nm but is not more than 700nm.But, do not have particular restriction for projection in the pleated structure and the gap level between the depression, but this gap is generally 200 to 700nm, preferred 300 to 700nm.
Fig. 1 illustrates the sectional view of explanation according to the structure of the light emitting semiconductor device of embodiment.
Figure 1A has illustrated the light emitting semiconductor device 100A according to first embodiment.Luminescent device 100A for example comprises n type GaAs substrate 101.For example on this substrate, heterostructure 102 comprises n type InAlP cover layer, InGaP active layer and the p type InAlP cover layer of formation.And for example the current extending 103 of p type InGaAlP forms thereon.The structure of compound semiconductor layer is not limited in these compound semiconductor sublayers, and compound semiconductor layer can have any configuration as required.The p side metal electrode layer that whole current extending has been equipped with the Au/Au-Zn of opening covers, and thin GaAs contact layer 104 is formed between current extending and the metal electrode layer, so that they can keep ohmic contact each other.Especially, if current extending comprises various elements, for example, if current extending comprises three kinds or more kinds of element such as InGaAlP or AlGaAs, be difficult not by contact layer and with forming sufficient ohmic contact between current extending and the metal electrode layer 105 formed thereon so.The material of contact layer depends on the material of adjacent layer, that is, and and the semiconductor of semiconductor layer and the metal of metal electrode layer, but usually preferred GaAs or GaP.Metal electrode layer 105 possesses a plurality of openings that pass this layer.Fig. 1 C is the plane graph of metal electrode layer 105.Electrode layer shown in Fig. 1 C comprises continuous metal part 105X and the opening 105Y that is formed at wherein.Opening shown in Fig. 1 C has random size and random alignment, but they do not limit embodiment.If desired, opening can have same size and regularly arranged.
On the metal electrode layer 105 that has been equipped with opening, form light-extraction layer 106A.Light-extraction layer for example is the ZnS film (refractive index: 2.3) with 20 to 70nm thickness.Because ZnS does not absorb about 400nm or the longer interior light of wave-length coverage basically, so it is transparent for the non-ultraviolet light that sends from semiconductor device.
At the opposing face of substrate, form for example n side counterelectrode 107 of Au.The light that active layer is launched is from the whole surface extraction of current extending.
Figure 1B is the sectional view that schematically illustrates according to the light emitting semiconductor device 100B of second embodiment.The light-extraction layer of this semiconductor device is different with the shape of the light-extraction layer of first embodiment.Among second embodiment, has the ZnS film (refractive index: 2.3) be formed on the metal electrode layer 105 that possesses opening of 200 to 500nm thickness.Therefore light-extraction layer 106B forms and has fine pleated structure.
Above-mentioned light emitting semiconductor device can be by any means manufacturing.But the semiconductor device of embodiment is characterised in that metal electrode layer 105 and light-extraction layer, and therefore in manufacture process, metal electrode layer and light-extraction layer with pleated structure preferably form by particular form.But can form by the combination of any known method on the other hand, such as the light-extraction layer among compound semiconductor layer, counterelectrode and first embodiment.
Fine opening can be for example be formed on the metal electrode layer according to the light emitting semiconductor device of embodiment by following steps (A) to (D).
(A) used the technology of the self assembly of block copolymer:
The luminescent device of embodiment can be according to the technology manufacturing that is separated of having used the block copolymer that is caused by self assembly.This technology comprises the steps:
On substrate, form compound semiconductor layer,
On the extraction side of compound semiconductor layer, form metal electrode layer, and
On the side opposite of substrate, form counter electrode layer with extraction side; Wherein:
The step that forms metal electrode layer further comprises following substep:
Form thin metal layer,
With at least a portion of the synthetic metallizing thin layer that comprises block copolymer, with formation block copolymer layer,
Block copolymer is separated with the film micro area of formation dot pattern form, and
Utilize the point-like figure film micro area to come the etching metal thin layer, possess the extraction side metal electrode layer of opening with formation as etching mask.
This technology will be described in more detail below.At first, on substrate, form compound semiconductor layer.Then, on the substrate surface opposite with compound semiconductor layer the metal of vacuum moulding machine such as Au/Zn to form counter electrode layer.Substrate, compound semiconductor layer and counter electrode layer can be made of any well known materials, and can be formed by any known method.For example, they can by with constitute by same material as indicated above with reference to figure 1.After this, such as the metal vacuum deposition of Au/Zn on compound semiconductor layer forming thin metal layer, and follow synthetic against corrosion and be coated on the thin metal layer and be heated, to form resist layer.
If desired, can further form organic polymer layers by coating and hot curing thereon.Organic polymer layers is used to form the mask of making thin metal layer in the step of subsequent descriptions.Because form mask, so the height of mask is determined by the thickness of organic polymer layers by peeling off organic polymer layers.Given this, organic polymer layers preferably has 50 to 400nm thickness.
On organic polymer layers, spin coating contains the synthetic of block copolymer, to form the block copolymer layer, then toasts this layer to remove solvent on heating plate.Then heat treatment copolymer layer under 150 ℃ to 250 ℃ temperature for example is separated it.Block copolymer for example comprises polystyrene (hereinafter referred to as " PS ") block and polymethyl methacrylate (hereinafter referred to as " PMMA ") block, so that form point-like PMMA zone in PS matrix.
If suitably select gas in reactive ion etching (RIE) technology, the etching speed of PS and PMMA is very different each other.Therefore, the PMMA dotted region that is separated can obtain the mesh figure of PS thus by the RIE selective removal to form the space.
Block copolymer is made of the etched typical polymers composition that can not stand to be applied to hard substrate usually, and therefore embodiment adopts the graph transfer method that utilizes inorganic substances.At first, above-mentioned space is by applying or by the physical evaporation deposition and filled by inorganic substances.Then remove the part of PS mesh figure, to obtain the point-like figure of inorganic substances by RIE.
Then, the point-like figure of the inorganic substances of formation is transferred to lower floor's organic polymer layers by RIE, to form the post figure of organic polymer layers.Then by stripping means, the post figure of organic polymer layers is inverted, thereby forms the mask of mesh figure.The inorganic substances that use in this step are preferably with respect to organic polymer has high etch-selectivity.
At last, the mesh pattern mask of inorganic substances grinds by RIE or by ion and transfers on lower floor's thin metal layer, has the metal electrode layer of opening and maintenance and compound semiconductor layer ohmic contact with formation.
(B) used the technology of nano impression (imprint)
The luminescent device of embodiment also can be made by the technology of having used nano impression.This technology comprises the steps:
On substrate, form compound semiconductor layer,
On the extraction side of compound semiconductor layer, form metal electrode layer, and
On the side opposite of substrate, form counter electrode layer with extraction side; Wherein:
The step that forms metal electrode layer further comprises following substep:
Form thin metal layer,
The preparation pressing mold, its surface has the fine relief pattern corresponding to the shape of the metal electrode that will form,
By utilizing pressing mold that resist pattern is transferred at least a portion of thin metal layer, and
By utilizing resist pattern on thin metal layer, to form opening as etching mask.
This technology will be described in more detail below.At first, on substrate, form compound semiconductor layer.Then, on the substrate surface opposite, form counter electrode layer with compound semiconductor layer.These layers can mode same as above form.
After this, such as the metal of Au/Zn by vacuum moulding machine on compound semiconductor layer forming thin metal layer, and follow synthetic against corrosion and be coated on the thin metal layer and be heated, to form resist layer.
Fine relief pattern corresponding to the hatch frame that defines among the embodiment is transferred on the resist layer as the pressing mold of mould by utilizing.
Pressing mold for example can be by being applied to the electron beam lithography manufacturing of quartz plate.Electron beam lithography can form desired structure on quartz plate, but this does not limit embodiment.In the technology of manufacturing according to the luminescent device of embodiment, material and the micro-structural to pressing mold do not limit especially.The method of self assembly that for example, can be by above-mentioned use block copolymer or the use subparticle by subsequent descriptions prepare pressing mold as the method for mask.
Pressing mold is placed on the resist layer, if desired, then heats resist layer, and then cools off and remove pressing mold on the resist layer, so that the recess printing motif opposite with the relief pattern of pressing mold transferred on the resist layer.By this way, obtained the resist pattern that has post and between post, have opening.
Embodiment is not restricted to above-mentioned hot nano-imprint process.Can utilize various stamping techniques (for example optical pressure seal and soft impression) to form above-mentioned figure, and they do not weaken the function according to the luminescent device of embodiment.
Utilize the resist pattern of gained to come the etching thin metal layer, get out opening to pass thin metal layer as mask.At last, remove the resist pattern mask, thereby obtain the light emitting semiconductor device of embodiment.
(C) used the technology of subparticle as mask
The luminescent device of embodiment also can be according to having used individual particle (monoparticle) layer (for example being made of fine silica) to make as mask.This technology comprises the steps:
On substrate, form compound semiconductor layer,
On the extraction side of compound semiconductor layer, form metal electrode layer, and
On the side opposite of substrate, form counter electrode layer with extraction side; Wherein:
The step that forms metal electrode layer further comprises following substep:
Form thin metal layer,
At least a portion with synthetic metallizing thin layer against corrosion forms resist layer,
On the surface of resist layer, form the individual particle layer of subparticle,
Utilize the individual particle layer to come the etching resist layer to form resist pattern as mask,
The opening of filling resist pattern with inorganic substances forms opposite pattern mask, and
Utilize opposite pattern mask in thin metal layer, to form opening as etching mask.
This technology will be explained hereinafter in detail.At first, on substrate, form compound semiconductor layer.Then, on the substrate surface opposite, form counter electrode layer with compound semiconductor layer.These layers can mode same as above form.
After this, such as the metal of Au and Au/Zn by vacuum moulding machine on compound semiconductor layer forming thin metal layer, and follow synthetic against corrosion and be coated on the thin metal layer to form resist layer.Then resist layer is carried out surface treatment, to form hydrophilic resist layer surface by reactive ion etching (RIE) technology.This surface treatment can promote the wetability of the dispersion of coating described below.
Therefore, the dispersion of fine silicon oxide particle that the resist layer that forms on the substrate is then for example contained the size of 200nm applies and is annealed and cools off (if desired), to form the individual particle layer of silicon oxide particle.The diameter of subparticle and distribution of sizes are suitably selected according to the design of opening.
The individual particle layer of the silicon oxide particle of etching gained is so that the fine silicon oxide particle of etching is with the radius that reduces them and form the gap between adjacent particle.This lower floor's resist layer that is etched in is difficult to implement under the etched condition.That is, utilize the difference of the etch-rate between particle and the resist layer, have only silicon oxide particle etched, so that between adjacent particle, form the gap.
Then, utilize remaining subparticle to come etching lower floor hot curing resist, to obtain resist pattern as mask.The figure of gained comprises the post that has set in advance the locational high aspect ratio of subparticle in the step formerly.
The post resist pattern of gained is applied by spin-coating glass (hereinafter referred to as SOG) solution, and then heating is so that the gap between the post of resist pattern is filled by SOG.
After this, remove remaining silicon oxide particle and the superfluous SOG that covers post figure against corrosion, comprised the post figure against corrosion of the SOG 509 that has filled the gap between the post with formation by etching.
Then remove the post of hot curing resist by etching.The result of this step is that the SOG mask with graphic structure opposite with above-mentioned post figure against corrosion is formed on the thin metal layer.
After this, utilize SOG mask etching thin metal layer to form the metal electrode layer that possesses opening.
At last, remove the SOG mask and make light emitting semiconductor device according to embodiment.
(D) used the technology of electron beam lithography
Metal electrode layer with opening also can form by the technology of having used electron beam lithography.This manufacturing comprises the steps: according to the technology of the luminescent device of embodiment
On substrate, form compound semiconductor layer,
On the extraction side of compound semiconductor layer, form metal electrode layer, and
On the side opposite of substrate, form counter electrode layer with extraction side; Wherein:
The step that forms metal electrode layer further comprises following substep:
Form thin metal layer,
Form resist layer with electron beam resist-coating thin metal layer,
Utilize electron beam lithography technology to handle resist layer, wherein by electron beam and then develop will be corresponding to the graphic plotting of the shape of the opening that will form on resist layer, with the formation resist pattern, and
Utilize resist pattern to come the etching metal thin layer, in layer, to form opening as mask.
Light emitting semiconductor device according to second embodiment comprises the light-extraction layer with special fine pleated structure.Can form fine pleated structure by any technology that applies (A) to (D), it is above being described to some extent as the method that gets out opening in metal electrode layer.Particularly, at first, dielectric or conductive film with high-transmission rate form thicklyer relatively as initial light-extraction layer, for example 200 to 500nm thickness; And then, by adopting the formed pattern mask of any technology to come film is carried out the RIE processing according to (A) to (D).
More specifically, for example, can make light emitting semiconductor device as follows.At first, on substrate, form compound semiconductor layer, and then on semiconductor layer, form Au/Au-Zn (3%) thin metal layer by vapour deposition by required method.Then, preferably to formed layer 450 ℃ of annealing 30 minutes down, so that thin metal layer can keep the ohmic contact with current extending.This annealing in process provides good Ohmic contact.Then with electron beam resist-coating Au/Au-Zn layer, to form the thick resist layer of 300nm.The resist layer of Xing Chenging is handled through electron beam lithography by electron-beam lithography system thus, and then is developed to form pattern mask, has designed the opening setting of wishing on pattern mask.After this, rely on the ion grinder to come etching Au/Au-Zn layer to be drilled to opening by pattern mask.
After this, the structure choice technology according to the light emitting semiconductor device of hope forms light-extraction layer.Under the situation of the device that forms first embodiment, possessing the thick ZnS film of formation 50nm on the Au/Au-Zn layer of opening by vapour deposition.
Under the situation of the device that forms second embodiment, possessing the thick ZnS film of formation 400nm on the Au/Au-Zn layer of opening by vapour deposition.Then with electron beam resist-coating ZnS film, to form the thick resist layer of 300nm.The resist layer of Xing Chenging is handled through electron beam lithography by electron-beam lithography system thus, and then is developed the pattern mask that forms corresponding to the pleated structure of hope.After this, rely on the RIE machine to come etching ZnS film to have the light-extraction layer of fine pleated structure with formation by pattern mask.
At last, the pad electrode that is used for wire-bonded is formed on the part of metal electrode layer, to obtain the light emitting semiconductor device according to embodiment.
Explain embodiment in more detail by following example, comprising the characteristic of known semiconductor device of common metal pad electrode compare with having comprised the Devices Characteristics that possesses according to the metal electrode of the opening of embodiment.
(example 1 and comparative example 1)
Make light emitting semiconductor device according to above-mentioned technology.In example 1, device is manufactured into the square size of 300 μ m, and it is identical with conventional device, so that assessment has comprised the Devices Characteristics of the metal electrode that possesses opening, thereby compares with conventional device.
As shown in Fig. 2 A, comprised that n type InAlP cover layer, InGaP active layer and the tectal heterostructure 102 of p type InAlP are formed on the n-GaAs substrate 101.And current extending 103 epitaxial growths of quaternary p type InGaAlP are on substrate 101.On the current extending that forms thus, and formation p type GaAs contact layer 104 (thickness: 0.1 μ m), so that guarantee ohmic contact.Opposition side at substrate provides n type counterelectrode 107.
Then, on p type GaAs contact layer, form Au (10nm)/Au-Zn (3%) (thickness: thin metal layer 105A 30nm) by vapour deposition.Follow formed layer under 450 ℃, annealing is 30 minutes in nitrogen atmosphere, so that form ohmic contact completely with p type GaAs layer.
After this, the usefulness electron sensitive resist (the FEP-301[trade mark], make by Fujifilm company) the metallizing thin layer, to form the thick resist layer of 300nm.(accelerating voltage: 50kV) handle resist layer, to form hole pattern 201, the diameter of its split shed and spacing are respectively 100nm and 200nm (Fig. 2 B) then to utilize the electron beam exposure system of having equipped pattern generator.
After this, be respectively under the condition of 500V and 40mA the etching metal thin layer at accelerating voltage and ionic current by the ion grinder 90 seconds, possess the metal electrode layer 105 of opening with formation.Behind etching step, remove resist (Fig. 2 C) by the oxygen ashing.
Then, vapour deposition ZnS (refractive index: 2.3) form the thick dielectric film of 50nm (Fig. 2 D).
Because ZnS is an insulator, so the ZnS film is partly removed in the zone that will form pad electrode.At last, pad electrode is formed on this zone to obtain light emitting semiconductor device (Fig. 2 E).The fluorescence of the device emission 635nm of gained.
Independently, make relatively light emitting semiconductor device (comparative example 1).In comparator device, have only pad electrode to be formed on the contact layer.Each device that manufactures all is cut into the square size of 300nm, and estimates characteristic in the mode of bare chip with comparing.The result provides in Fig. 3 A, and Fig. 3 A shows the voltage-current characteristic curve chart.Fig. 3 A shows because metal electrode possesses opening, so the device of embodiment shows voltage lower than conventional device under the situation of same current.And Fig. 3 B illustrates and current related light characteristic.As indicated in Fig. 3 B, light-extraction layer (ZnS film) has promoted transmissivity, demonstrates brighter brightness so possess the metal electrode of opening.And, along with electric current increases, the device significantly sacrificing of comparative example 1 brightness, the device that has comprised light-extraction layer and possessed the electrode of opening does not then lose brightness, but has kept brightness.In a word, under the 100mA situation, sent the fluorescence brighter according to the device of embodiment than conventional device.
This is because improved heat-sinking capability by the metal electrode layer that covers whole emitting surface, but also because light-extraction layer has improved the transmissivity of metal electrode layer.
(example 2)
The light emitting semiconductor device that the device of preparation and example 1 similarly has the n-GaAs/n-InAlP/InGaP/p-InAlP/p-InGaAlP/p-GaAs structure.
On p type GaAs contact layer, form Au (10nm)/Au-Zn (3%) (thickness: thin metal layer 105A 30nm) (Fig. 4 A) by vapour deposition.Follow formed layer under 450 ℃, annealing is 30 minutes in nitrogen atmosphere, so that form ohmic contact completely with contact layer.
After this, with electron sensitive resist with example 1 in identical mode come the metallizing thin layer, to form the thick resist layer of 300nm.(accelerating voltage: 50kV) handle resist layer, to form hole pattern 201, the diameter of its split shed and spacing are respectively 100nm and 200nm (Fig. 4 B) then to utilize the electron beam exposure system of having equipped pattern generator.
After this, be respectively under the condition of 500V and 40mA the etching metal thin layer at accelerating voltage and ionic current by the ion grinder 90 seconds, possess the metal electrode layer of opening with formation.Behind etching step, remove resist (Fig. 4 C) by the oxygen ashing.
Then, vapour deposition ZnS (refractive index: 2.3) form the thick dielectric film 106A of 400nm (Fig. 4 D).On the ZnS film, the electron beam resist layer that 300nm is thick forms with aforementioned manner.(accelerating voltage: 50kV) handle resist layer, to form dot pattern mask 401, the diameter of its mid point and spacing are respectively 200nm and 300nm (Fig. 4 E) then to utilize the electron beam exposure system of having equipped pattern generator.
After this, pass through dot pattern mask 401 at Cl by RIE equipment
2 Etching insulation film 106A is 1 minute under the condition of/Ar=10/10sccm, 5mTorr and ICP/ biasing=100/300W.Then pass through O
2Asher removes the residue resist.Therefore this etching step has formed light-extraction layer 106B, and it is the dielectric film that possesses pleated structure, and this fold has the projection of 200nm size, the spacing of 300nm and the height (Fig. 4 F) of 300nm.
Because ZnS is an insulator, so the ZnS film is partly removed in the zone that will form pad electrode.At last, pad electrode 202 is formed on this zone to obtain light emitting semiconductor device (Fig. 4 G).
Independently, make relatively light emitting semiconductor device (comparative example 2).For the manufacturing of comparator device, except only being provided, pad electrode comes substituted metal electrode layer and the light-extraction layer, repeat the step of example 2.Each device that manufactures is estimated characteristic in the mode of bare chip with comparing.Found that, because metal electrode possesses the fine pleated structure of opening and light-extraction layer, so the device of embodiment shows voltage lower than conventional device under the situation of same current.Fig. 5 illustrates the light characteristic with current related they.As indicated in Fig. 5, when electric current is low to moderate tens MAHs, the device of example 2 demonstrates the device brightness much at one with comparative example 2.But along with electric current increases, the device significantly sacrificing of comparative example 2 brightness, the device of example 2 does not then lose brightness, but has kept brightness.Therefore, under the 100mA situation, the device of example 2 has sent the fluorescence brighter than the device of comparative example 2.
This is because improved heat-sinking capability by the metal electrode layer that covers whole emitting surface, but also because has the transmissivity that the light-extraction layer of fine pleated structure has improved metal electrode layer.
(example 3 and comparative example 3)
The preparation light emitting semiconductor device.This device is identical with the structure of example 1, but is the square size of 1mm, and it is bigger than general semiconductor device.
Independently, make relatively light emitting semiconductor device (comparative example 3).For the manufacturing of comparator device, except only being provided, the pad electrode that is connected to fine rule comes substituted metal electrode layer and the light-extraction layer, repeat the step of example 3.Each device is estimated characteristic in the mode of bare chip with comparing.Found that when electric current was 1A, the forward voltage of the device of example 3 was 0.2V, it is less than the forward voltage of the device of comparative example 3.And when electric current was 500mA, the brightness of the light of the device of example 3 emission was 2.5 times of device of comparative example 3.
These results have shown that according to comprising of embodiment the light emitting semiconductor device of the metal electrode that possesses opening and specific light-extraction layer can be advantageously used for the large chip light emitting semiconductor device.
(example 4 and comparative example 4)
The preparation light emitting semiconductor device.This device is identical with the structure of example 2, but is the square size of 1mm, and it is bigger than general semiconductor device.
Independently, make relatively light emitting semiconductor device (comparative example 4).For the manufacturing of comparator device, except only being provided, the pad electrode that is connected to fine rule comes substituted metal electrode layer and the light-extraction layer, repeat the step of example 4.Each device is estimated characteristic in the mode of bare chip with comparing.Found that when electric current was 1A, the forward voltage of the device of example 4 was 0.2V, it is less than the forward voltage of the device of comparative example 4.And when electric current was 500mA, the brightness of the light of the device of example 4 emission was 2.5 times of device of comparative example 4.
These results have shown that according to comprising of embodiment the light emitting semiconductor device of the metal electrode that possesses opening and specific light-extraction layer can be advantageously used for the large chip light emitting semiconductor device.
(example 5 and comparative example 5)
Except the thick SiN film (refractive index: 2.0) replace the ZnS film, repeat the step of example 3, thereby prepare the light emitting semiconductor device of the square size of 1mm of 60nm that forms by the CVD method as the dielectric film.
Independently, make relatively light emitting semiconductor device (comparative example 5).For the manufacturing of comparator device, except only being provided, the pad electrode that is connected to fine rule comes substituted metal electrode layer and the light-extraction layer, repeat the step of example 5.Each device is estimated characteristic in the mode of bare chip with comparing.Found that when electric current was 1A, the forward voltage of the device of example 5 was 0.2V, it is less than the forward voltage of the device of comparative example 5.And when electric current was 500mA, the brightness of the light of the device of example 5 emission was 2.3 times of device of comparative example 5.Therefore, reduced effect slightly, it is lower to make that brightness promotes.Infer that this is because the refractive index of light-extraction layer is lower than the cause of the refractive index in the example 3.
(example 6 and comparative example 6)
Except the thick electroconductive ITO film (refractive index: 2.0) the replacement insulation ZnS film, repeat the step of example 3, thereby prepare the light emitting semiconductor device of the square size of 1mm of 60nm that forms by sputter.Because the ITO film conducts electricity,, and do not remove any part of ITO film so pad electrode is formed directly on it.
Independently, make relatively light emitting semiconductor device (comparative example 6).For the manufacturing of comparator device, except only being provided, the pad electrode that is connected to fine rule comes substituted metal electrode layer and the light-extraction layer, repeat the step of example 6.Each device is estimated characteristic in the mode of bare chip with comparing.Found that when electric current was 1A, the forward voltage of the device of example 6 was 0.2V, it is less than the forward voltage of the device of comparative example 6.And when electric current was 500mA, the brightness of the light of the device of example 6 emission was 2.25 times of device of comparative example 6.
(example 7 and comparative example 7)
In metal electrode layer, forms the opening except utilizing i-ray resist to replace electron sensitive resist, repeat the step of example 3, thereby prepare the light emitting semiconductor device of the square size of 1mm.Particularly, with i-ray resist (the THMR-iP3650[trade mark], make by TOKYO OHKA KOGYO Co., Ltd) the metallizing thin layer forms the thick resist layer of 1 μ m, and then utilize i-ray stepping exposure system to handle resist layer, to form hole pattern, the diameter of the opening of this hole pattern and spacing are respectively 500nm and 1 μ m.After this, the step that repeats example 3 is made light emitting semiconductor device.
Independently, make relatively light emitting semiconductor device (comparative example 7).For the manufacturing of comparator device, except only being provided, the pad electrode that is connected to fine rule comes substituted metal electrode layer and the light-extraction layer, repeat the step of example 7.Each device is estimated characteristic in the mode of bare chip with comparing.Found that when electric current was 1A, the forward voltage of the device of example 7 was 0.15V, it is less than the forward voltage of the device of comparative example 7.And when electric current was 500mA, the brightness of the light of the device of example 7 emission was 2.0 times of device of comparative example 7.
(example 8 and comparative example 8)
In metal electrode layer, forms the opening except utilizing i-ray resist to replace electron sensitive resist, repeat the step of example 4, thereby prepare the light emitting semiconductor device of the square size of 1mm.Particularly, with i-ray resist (the THMR-iP3650[trade mark], make by TOKYO OHKA KOGYO Co., Ltd) the metallizing thin layer forms the thick resist layer of 1 μ m, and then utilize i-ray stepping exposure system to handle resist layer, to form hole pattern, the diameter of the opening of this hole pattern and spacing are respectively 500nm and 1 μ m.After this, the step that repeats example 4 is made light emitting semiconductor device.
Independently, make relatively light emitting semiconductor device (comparative example 8).For the manufacturing of comparator device, except only being provided, the pad electrode that is connected to fine rule comes substituted metal electrode layer and the light-extraction layer, repeat the step of example 8.Each device is estimated characteristic in the mode of bare chip with comparing.Found that when electric current was 1A, the forward voltage of the device of example 8 was 0.15V, it is less than the forward voltage of the device of comparative example 8.And when electric current was 500mA, the brightness of the light of the device of example 8 emission was 1.9 times of device of comparative example 8.
(example 9 and comparative example 9)
Except the diameter of the opening of the hole pattern that forms and spacing are 1.5 μ m and 2 μ m respectively, repeat the step of example 7, thus the light emitting semiconductor device of the square size of preparation 1mm.
Independently, make relatively light emitting semiconductor device (comparative example 9).For the manufacturing of comparator device, except only being provided, the pad electrode that is connected to fine rule comes substituted metal electrode layer and the light-extraction layer, repeat the step of example 9.Each device is estimated characteristic in the mode of bare chip with comparing.Found that when electric current was 1A, the forward voltage of the device of example 9 was 0.1V, it is less than the forward voltage of the device of comparative example 9.And when electric current was 500mA, the brightness of the light of the device of example 9 emission was 1.7 times of device of comparative example 9.
These results show that then the lifting of brightness eases up if the diameter of opening and spacing increase.Infer that this is because variation has taken place current expansion.
(example 10 and comparative example 10)
The light emitting semiconductor device that the device of preparation and example 1 similarly has the n-GaAs/n-InAlP/InGaP/p-InAlP/p-InGaAlP/p-GaAs structure.Go up by vapour deposition at p type GaAs layer 104 (contact layer) and to form Au (thickness: 10nm)/Au-Zn (3%) (thickness: thin metal layer 105A 30nm).Then under 450 ℃, annealing is 30 minutes in nitrogen atmosphere.
After this, adopt ethyl lactate (EL) by the resist that dilutes at 1: 1 (the THMR-iP3250[trade mark], make by TOKYO OHKA KOGYO Co., Ltd) solution is with 2000rmp spin coating thin metal layer 105A 30 seconds, and then place on the heating plate, handle 90 seconds down with evaporating solvent at 110 ℃.Under 250 ℃, the annealing resist is so that its thermmohardening in nitrogen atmosphere.The resist layer of Xing Chenging has the thickness of 300nm thus.
Independently, the silicon oxide particle of diameter 200nm is dispersed in the ethyl lactate.The amount of particle is adjusted into 8wt%.Then, acrylic monomers is added in the said mixture, so that silica: the volume ratio of acrylic monomers is 1: 3, thus the dispersion of obtaining.With ethyoxyl (6) trimethylolpropane triacrylate (hereinafter referred to as " E6TPTA ") as acrylic monomers.Then the dispersion with gained drips on the resist layer that is formed on the substrate, and spin coating 60 seconds under 2000rmp.After the spin coating operation, solvent is got rid of fully by baking 60 seconds under 110 ℃.Then thus obtained layer is annealed 1 hour down with sclerosis at 150 ℃, thereby form the individual particle layer, the silicon oxide particle 602A in this individual particle layer is regularly arranged (Fig. 6 A).
After this, at CF
4Under the condition of flow: 30sccm, pressure: 1.33Pa (10mTorr) and power: 100W, by reactive ion etching (RIE) equipment etching oxidation silicon grain layer 2 minutes, make the size of silicon oxide particle be reduced to 150nm (Fig. 6 B) thus, thereby between particle, form the gap.
Then, at O
2Under the condition of flow: 30sccm, pressure: 1.33Pa (10mTorr) and power: 100W, utilize the silicon oxide particle layer to come the etching resist layer 5 minutes, thereby form post figure against corrosion (Fig. 6 C) as mask.
Drip organic SOG synthetic (OCD-T7 T-14000[trade mark], make) on the post figure against corrosion on the substrate and with 2000rmp spin coating 60 seconds being positioned at of forming thus by TOKYO OHKA KOGYO Co., Ltd.After the spin coating operation, solvent is got rid of fully by baking 60 seconds under 110 ℃.Then with thus obtained layer 250 ℃ down annealing 1 hour and make post figure against corrosion be completely buried among the SOG layer 603A thus and make its surface flatten (Fig. 6 D) with sclerosis.
At CF
4Eat-back SOG layer 10 minutes under the condition of flow: 30sccm, pressure: 1.33Pa (10mTorr) and power: 100W, so that the top of column figure against corrosion exposed (Fig. 6 E) with horizontal surface.
After this, at O
2Under the condition of flow: 30sccm, pressure: 1.33Pa (10mTorr) and power: 100W, post figure 601 against corrosion is removed fully by etching 3 minutes, thus the hole pattern 603 (Fig. 6 F) of formation SOG.
Then be respectively under the condition of 500V and 40mA at accelerating voltage and ionic current, by the ion grinder with thin metal layer 105A etching 90 seconds, thereby form the metal electrode layer 105 possess opening.After the etching work procedure, SOG immersed 5% hydrofluoric acid solution and SOG removed (Fig. 6 G).
Then, on metal electrode layer 105, form the thick ZnS film 106A (refractive index: 2.3) of 60nm by vapour deposition.
At last, part removes after the ZnS film in the zone that will form pad electrode, forms pad electrode 202 in this position, obtains light emitting semiconductor device (Fig. 6 H) thus.
Independently, make relatively light emitting semiconductor device (comparative example 10).For the manufacturing of comparator device, except only being provided, the pad electrode that is connected to fine rule comes substituted metal electrode layer and the light-extraction layer, repeat the step of example 10.Each device all is cut into the square size of 1mm, and estimates characteristic in the mode of bare chip with comparing.Found that when electric current was 1A, the forward voltage of the device of example 10 was 0.2V, it is less than the forward voltage of the device of comparative example 10.And when electric current was 500mA, the brightness of the light of the device of example 10 emission was 2.5 times of device of comparative example 10.
(example 11 and comparative example 11)
The operation that repeats example 10 is to form metal electrode layer 105 (Fig. 7 A to G) on compound semiconductor layer.
(refractive index: 2.3) 106A forms the thick electron beam resist layer of 300nm in the mode identical with example 2 on formed ZnS film to form the thick ZnS film of 500nm by vapour deposition on metal electrode layer 105.(accelerating voltage: 50kV) handle resist layer to form dot pattern 401, the size of its mid point and spacing are respectively 300nm and 500nm (Fig. 7 H) then to utilize the electron beam exposure system of having equipped graphic generator.Here " size " is meant the equivalent diameter of estimating from the area of section of the figure shown in the above-mentioned diagram.
Then, by RIE equipment at Cl
2Etching ZnS film is 1 minute under the condition of/Ar=10/10sccm, 5mTorr and ICP/ biasing=100/300W.Then pass through O
2Asher removes the residue resist.Therefore this etching step has formed light-extraction layer 106B, and it is the ZnS film that possesses pleated structure, and this fold has the projection of 300nm size, the spacing of 500nm and the height (Fig. 7 I) of 300nm.
At last, part removes after the ZnS film in the zone that will form pad electrode, forms pad electrode 202 in this position, obtains light emitting semiconductor device (Fig. 7 J) thus.
Independently, make relatively light emitting semiconductor device (comparative example 11).For the manufacturing of comparator device, except only being provided, the pad electrode that is connected to fine rule comes substituted metal electrode layer and the light-extraction layer, repeat the step of example 11.Each device all is cut into the square size of 1mm, and estimates characteristic in the mode of bare chip with comparing.Found that when electric current was 1A, the forward voltage of the device of example 11 was 0.2V, it is less than the forward voltage of the device of comparative example 11.And when electric current was 500mA, the brightness of the device emitted fluorescence of example 11 was 2.4 times of device of comparative example 11.
(example 12 and comparative example 12)
The light emitting semiconductor device that the device of preparation and example 1 similarly has the n-GaAs/n-InAlP/InGaP/p-InAlP/p-InGaAlP/p-GaAs structure.On p type GaAs layer 104, form Au (thickness: 10nm)/Au-Zn (3%) (thickness: 10nm) layer 105A by vapour deposition.Then under 450 ℃, annealing is 30 minutes in nitrogen atmosphere.
After this, adopt ethyl lactate (EL) by the resist that dilutes at 1: 3 (the THMR-iP3250[trade mark], make by TOKYO OHKA KOGYO Co., Ltd) solution is with 2000rmp spin coating Au/Au- Zn layer 105A 30 seconds, and then place on the heating plate, handle 90 seconds down with evaporating solvent at 110 ℃.Under 250 ℃, the annealing resist is so that its thermmohardening in nitrogen atmosphere.The resist layer 801A of Xing Chenging has the thickness of 100nm thus.
Then, adopt ethyl lactate (EL) by the organic SOG synthetic that dilutes at 1: 5 (OCD-T7T-5500[trade mark], by the manufacturing of TOKYO OHKA KOGYO Co., Ltd) solution with 2000rmp spin coating resist layer 60 seconds.After the spin coating operation, solvent is got rid of fully by baking 60 seconds under 110 ℃.Then thus obtained layer is annealed 1 hour down with sclerosis at 250 ℃.The SOG layer 802A of Xing Chenging has the thickness (Fig. 8 A) of 30nm thus.
Further with the block polymer solution of the polymethyl methacrylate (hereinafter referred to as " PMMA ") that contains the polystyrene (hereinafter referred to as " PS ") of 160000 molecular weight and 45000 molecular weight with 3000rmp spin coating SOG layer, and, thereby form block copolymer layer 803A (Fig. 8 B) then by removing solvent in 90 seconds 110 ℃ of following prebake conditions.After this, under 210 ℃, annealing block copolymer layer is 4 hours in nitrogen atmosphere, so that PS and PMMA be separated, thus formation dot pattern 803, in the dot pattern 803, the size of PMMA film micro area is 40nm, and with 60nm spacing arrangement (Fig. 8 C).
The block copolymer layer that is separated thus is at O
2Pass through the RIE etching under the condition of flow: 30sccm, pressure: 13.3Pa (100mTorr) and power: 100W.Because PS has different etch-rates with PMMA, so selective etch PMMA is to form the hole pattern of PS.
After this, at CF
4Under the condition of flow: 30sccm, pressure: 1.33Pa (10mTorr) and power: 100W, utilize the hole pattern of PS to come the SOG of etching lower floor layer 1 minute, thereby form the SOG hole pattern as mask.
Then, at O
2Under the condition of flow: 30sccm, pressure: 1.33Pa (10mTorr) and power: 100W, utilize the SOG hole pattern,, thereby form aperture mask against corrosion (Fig. 8 D) by RIE etching resist layer 60 seconds as mask.
Then, be respectively under the situation of 500V and 40mA,, thereby form the metal electrode layer 105 that possesses opening by ion grinder etching Au/Au-Zn layer 100 seconds at accelerating voltage and ionic current.(Fig. 8 E).
After this, form the thick ZnS film (refractive index: 2.3) 106A (Fig. 8 F) of 50nm by vapour deposition.
At last, part removes after the ZnS film in the zone that will form pad electrode, forms pad electrode 202 in this position, obtains light emitting semiconductor device (Fig. 8 G) thus.
Independently, make relatively light emitting semiconductor device (comparative example 12).For the manufacturing of comparator device, except only being provided, the pad electrode that is connected to fine rule comes substituted metal electrode layer and the light-extraction layer, repeat the step of example 12.Each device all is cut into the square size of 1mm, and estimates characteristic in the mode of bare chip with comparing.Found that when electric current was 1A, the forward voltage of the device of example 12 was 0.2V, it is less than the forward voltage of the device of comparative example 12.And when electric current was 500mA, the brightness of the light of the device of example 12 emission was 2.4 times of device of comparative example 12.
(example 13 and comparative example 13)
The operation that repeats example 12 is to form metal electrode layer 105 (Fig. 9 A to E) on compound semiconductor layer.
(refractive index: 2.3) 106A forms the thick electron beam resist layer of 300nm in the mode identical with example 2 on formed ZnS film to form the thick ZnS film of 400nm by hydatogenesis on metal electrode layer 105.(accelerating voltage: 50kV) handle resist layer to form dot pattern 401, the size of its mid point and spacing are respectively 150nm and 200nm (Fig. 9 F) then to utilize the electron beam exposure system of having equipped graphic generator.
Then, by RIE equipment at Cl
2Etching ZnS film is 90 seconds under the condition of/Ar=10/10sccm, 5mTorr and ICP/ biasing=100/300W.Then pass through O
2Asher removes the residue resist.Therefore this etching step has formed light-extraction layer 106B, and it is the ZnS film that possesses pleated structure, and this fold has the projection of 150nm size, the spacing of 200nm and the height (Fig. 9 G) of 400nm.
At last, part removes after the ZnS film in the zone that will form pad electrode, forms pad electrode 202 in this position, obtains light emitting semiconductor device (Fig. 9 H) thus.
Independently, make relatively light emitting semiconductor device (comparative example 13).For the manufacturing of comparator device, except only being provided, the pad electrode that is connected to fine rule comes substituted metal electrode layer and the light-extraction layer, repeat the step of example 13.Each device all is cut into the square size of 1mm, and estimates characteristic in the mode of bare chip with comparing.Found that when electric current was 1A, the forward voltage of the device of example 13 was 0.2V, it is less than the forward voltage of the device of comparative example 13.And when electric current was 500mA, the brightness of the light of the device of example 13 emission was 2.45 times of device of comparative example 13.
(example 14 and comparative example 14)
The light emitting semiconductor device that the device of preparation and example 1 similarly has the n-GaAs/n-InAlP/InGaP/p-InAlP/p-InGaAlP/p-GaAs structure.On p type GaAs layer 104, form Au (thickness: 10nm)/Au-Zn (3%) (thickness: 40nm) layer 105A by vapour deposition.Then under 450 ℃, annealing is 30 minutes in nitrogen atmosphere.
After this, adopt ethyl lactate (EL) by the resist that dilutes at 1: 2 (the THMR-iP3250[trade mark], make by TOKYO OHKA KOGYO Co., Ltd) solution is with 2000rmp spin coating Au/Au-Zn layer 30 seconds, and then place on the heating plate, handle 90 seconds down with evaporating solvent at 110 ℃.The resist layer 801A of Xing Chenging has the thickness (Figure 10 A) of 150nm thus.
Independently, prepare quartzy mould 1001.On quartzy mould, carved relief pattern in advance (at 9cm
2Area in), so that the post of 200nm size and 150nm height is set at interval with 300nm.To have the substrate that forms resist layer thereon in the above described manner simultaneously heats down at 120 ℃, quartzy mould is placed on the resist layer so that relief pattern contacts with resist layer, and then under the pressure of 10MPa, be placed on the resist layer to implement impression (Figure 10 B).After the impression operation, with the substrate cool to room temperature and then quartzy mould is removed from resist layer.Because the impression operation makes recess printing motif 801B be formed on the resist pattern.In formed figure, the hole of the 200nm size and the 100nm degree of depth is provided with (Figure 10 C) with the interval of 300nm.
Then, at O
2The intaglio resist pattern that etching forms thus under the condition of flow: 30sccm, pressure: 10mTorr and RF power: 100W 30 seconds.At O
2After the RIE operation, remove the bottom in the hole in the resist layer, thus exposed Au/Au-Zn layer 105A (Figure 10 D).
After this, be respectively under the condition of 500V and 40mA,, thereby form the metal electrode layer 105 that possesses opening by ion grinder etching Au/Au-Zn layer 105A 90 seconds at accelerating voltage and ionic current.After the etching work procedure, remove resist (Figure 10 E) by the oxygen ashing.
After this, form the thick SiN film (refractive index: 2.0) 106A (Figure 10 F) of 60nm by the CVD method.
At last, part removes after the SiN film in the zone that will form pad electrode, forms pad electrode 202 in this position, obtains light emitting semiconductor device (Figure 10 G) thus.
Independently, make relatively light emitting semiconductor device (comparative example 14).For the manufacturing of comparator device, except only being provided, the pad electrode that is connected to fine rule comes substituted metal electrode layer and the light-extraction layer, repeat the step of example 14.Each device all is cut into the square size of 1mm, and estimates characteristic in the mode of bare chip with comparing.Found that when electric current was 1A, the forward voltage of the device of example 14 was 0.2V, it is less than the forward voltage of the device of comparative example 14.And when electric current was 500mA, the brightness of the device emitted fluorescence of example 14 was 2.3 times of device of comparative example 14.
(example 15 and comparative example 15)
The operation that repeats example 14 is to form metal electrode layer 105 (Figure 11 A to E) on compound semiconductor layer.
(refractive index: 2.0) 106A forms the thick electron beam resist layer of 300nm in the mode identical with example 2 on formed SiN film to form the thick SiN film of 500nm by the CVD method on metal electrode layer 105.(accelerating voltage: 50kV) handle resist layer to form dot pattern 401, the size of its mid point and spacing are respectively 200nm and 300nm (Figure 11 F) then to utilize the electron beam exposure system of having equipped graphic generator.
Then, by RIE equipment at Cl
2Etching SiN film is 90 seconds under the condition of/Ar=10/10sccm, 5mTorr and ICP/ biasing=100/300W.Then pass through O
2Asher removes the residue resist.Therefore this etching step has formed light-extraction layer 106B, and it is the SiN film that possesses pleated structure, and this fold has the projection of 200nm size, the spacing of 300nm and the height (Figure 11 G) of 400nm.
At last, part removes after the SiN film in the zone that will form pad electrode, forms pad electrode 202 in this position, obtains light emitting semiconductor device (Figure 11 H) thus.
Independently, make relatively light emitting semiconductor device (comparative example 15).For the manufacturing of comparator device, except only being provided, the pad electrode that is connected to fine rule comes substituted metal electrode layer and the light-extraction layer, repeat the step of example 15.Each device all is cut into the square size of 1mm, and estimates characteristic in the mode of bare chip with comparing.Found that when electric current was 1A, the forward voltage of the device of example 15 was 0.2V, it is less than the forward voltage of the device of comparative example 15.And when electric current was 500mA, the brightness of the light of the device of example 15 emission was 2.3 times of device of comparative example 15.
(example 16 and comparative example 16)
GaN resilient coating 1202 is formed on the Sapphire Substrate 1201.On GaN resilient coating 1202, the order epitaxial growth forms n-GaN:Si layer 1203, InGaN/GaN Multiple Quantum Well (MQW) layer 1204, p-Al
0.2Ga
0.8N:Mg layer 1205 and p-GaN:Mg layer 1206.After this, on the p-GaN:Mg layer, form Ni (thickness: 10nm)/Au (thickness: 40nm) layer 1207A, and then carry out quick high-temp annealing by vapour deposition so that form ohmic contact (Figure 12 A).
After this, form the electron beam resist layer in the mode identical with example 2 on Ni/Au layer 1207A, and utilize graphic generator to handle to form hole pattern 1208, in this hole pattern 1208, the diameter of opening and spacing are respectively 100nm and 200nm (Figure 12 B).
Then, be respectively under the situation of 500V and 40mA,, thereby form the metal electrode layer 1207 that possesses opening by ion grinder etching Ni/Au layer 120 seconds at accelerating voltage and ionic current.After the etching work procedure, remove resist (Figure 12 C) by the oxygen ashing.
Then, on metal electrode layer, form the thick ZnS film of 60nm (refractive index: 2.3) 106A (Figure 12 D) by vapour deposition.
After this, the partly exposed n-GaN layer 1203 by composition is so that be formed for forming the space (Figure 12 E) of n type electrode on the n-GaN layer.At last, form n type electrode 1209 and p type pad electrode 1210 to obtain light emitting semiconductor device (Figure 12 F).The light of the device emission 450nm of gained.
Independently, make relatively light emitting semiconductor device (comparative example 16).For the manufacturing of comparator device, except only being provided, the pad electrode that is connected to fine rule comes substituted metal electrode layer and the light-extraction layer, repeat the step of example 16.Each device all is cut into the square size of 1mm, and estimates characteristic in the mode of bare chip with comparing.Found that when electric current was 1A, the forward voltage of the device of example 16 was 0.25V, it is less than the forward voltage of the device of comparative example 16.And when electric current was 500mA, the brightness of the light of the device of example 16 emission was 1.8 times of device of comparative example 16.These results' confirmations have the effect that has also produced embodiment according to the GaN type device of the structure of embodiment.
(example 17 and comparative example 17)
The operation that repeats example 16 is to form metal electrode layer 1207 (Figure 13 A to C) on compound semiconductor layer.
Then, (refractive index: 2.3) 106A forms the thick electron beam resist layer of 300nm in the mode identical with example 2 on formed ZnS film to form the thick ZnS film of 400nm by vapour deposition.(accelerating voltage: 50kV) handle resist layer to form dot pattern 401, the size of its mid point and spacing are respectively 200nm and 300nm (Figure 13 D) then to utilize the electron beam exposure system of having equipped graphic generator.
Then, by RIE equipment at Cl
2Etching ZnS film is 1 minute under the condition of/Ar=10/10sccm, 5mTorr and ICP/ biasing=100/300W.Then pass through O
2Asher removes the residue resist.Therefore this etching step has formed light-extraction layer 106B, and it is the ZnS film that possesses pleated structure, and this pleated structure has the projection of 200nm size, the spacing of 300nm and the height (Figure 13 E) of 300nm.
After this, the partly exposed n-GaN layer 1203 by composition is so that be formed for forming the space (Figure 13 G) of n type electrode on the n-GaN layer.At last, form n type electrode 1209 and p type pad electrode 1210 to obtain light emitting semiconductor device (Figure 13 H).The light of the device emission 450nm of gained.
Independently, make relatively light emitting semiconductor device (comparative example 17).For the manufacturing of comparator device, except only being provided, the pad electrode that is connected to fine rule comes substituted metal electrode layer and the light-extraction layer, repeat the step of example 17.Each device all is cut into the square size of 1mm, and estimates characteristic in the mode of bare chip with comparing.Found that when electric current was 1A, the forward voltage of the device of example 17 was 0.25V, it is less than the forward voltage of the device of comparative example 17.And when electric current was 500mA, the brightness of the light of the device of example 17 emission was 1.8 times of device of comparative example 17.These results' confirmations have the effect that has also produced embodiment according to the GaN type device of the structure of embodiment.
(example 18 and comparative example 18)
Preparation comprises Sapphire Substrate/GaN resilient coating/n-GaN:Si layer/InGaN/GaN mqw layer/p-Al
0.2Ga
0.8The light emitting semiconductor device of N:Mg layer/p-GaN:Mg layer, the device of itself and example 16 is similar.After this, on the p-GaN:Mg layer, form Ni (thickness: 2nm)/(thickness: 30nm) layer to be forming thin metal layer 1207A, and then carries out the quick high-temp annealing in process so that guarantee ohmic contact for Ag by vapour deposition.
After this, adopt ethyl lactate (EL) by the resist that dilutes at 1: 2 (the THMR-iP3250[trade mark], make by TOKYO OHKA KOGYO Co., Ltd) solution is with 2000rmp spin coating Ni/Ag layer 30 seconds, and then place on the heating plate, handle 90 seconds down with evaporating solvent at 110 ℃.The resist layer 1401A of Xing Chenging has the thickness (Figure 14 A) of 150nm thus.Independently, prepare quartzy mould 1402.On quartzy mould, carved relief pattern in advance (at 9cm
2Area in), so that the post of 200nm size and 150nm height is set at interval with 300nm.To have simultaneously in the above described manner form resist layer thereon substrate 120 ℃ of heating down, quartzy mould is placed on the resist layer so that relief pattern contact with resist layer, and then under the pressure of 10MPa, be placed on the resist layer and impress with enforcement.After the impression operation, with the substrate cool to room temperature and then quartzy mould is removed from resist layer.Because the impression operation makes recess printing motif 1401B be formed on the resist pattern.In formed figure, the hole of the 200nm size and the 100nm degree of depth is provided with (Figure 14 B) with the interval of 300nm.
Then, at O
2The intaglio resist pattern that etching forms thus under the condition of flow: 30sccm, pressure: 10mTorr and RF power: 100W 30 seconds.At O
2After the RIE operation, remove the bottom in the hole in the resist layer, thus exposed Ni/Ag layer 1207A (Figure 14 C).
After this, be respectively under the situation of 500V and 40mA,, thereby form the metal electrode layer 1207 that possesses opening by ion grinder etching Ni/Ag layer 100 seconds at accelerating voltage and ionic current.After the etching work procedure, remove resist (Figure 14 D) by the oxygen ashing.
After this, on metal electrode layer, form the thick SiN film of 80nm (refractive index: 2.0) 106A (Figure 14 E) by the CVD method.
After this, the n-GaN layer 1203 that partly exposes by composition is so that be formed for forming the space (Figure 14 F) of n type electrode on the n-GaN layer.At last, form n type electrode 1209 and p type pad electrode 1210 to obtain light emitting semiconductor device (Figure 14 G).
Independently, make relatively light emitting semiconductor device (comparative example 18).For the manufacturing of comparator device, except only being provided, the pad electrode that is connected to fine rule comes substituted metal electrode layer and the light-extraction layer, repeat the step of example 18.Each device all is cut into the square size of 1mm, and estimates characteristic in the mode of bare chip with comparing.Found that when electric current was 1A, the forward voltage of the device of example 18 was 0.25V, it is less than the forward voltage of the device of comparative example 18.And when electric current was 500mA, the brightness of the light of the device of example 18 emission was 1.8 times of device of comparative example 18.
(example 19 and comparative example 19)
The operation that repeats example 18 is to form metal electrode layer 1207 (Figure 15 A to D) on compound semiconductor layer.
Then, (refractive index: 2.0) 106A forms the thick electron beam resist layer of 300nm in the mode identical with example 2 on formed SiN film to form the thick SiN film of 500nm by the CVD method.(accelerating voltage: 50kV) handle resist layer to form dot pattern 401, the size of its mid point and spacing are respectively 200nm and 300nm (Figure 15 E) then to utilize the electron beam exposure system of having equipped graphic generator.
By RIE equipment at Cl
2Etching SiN film is 90 seconds under the condition of/Ar=10/10sccm, 5mTorr and ICP/ biasing=100/300W.Then pass through O
2Asher removes the residue resist.Therefore this etching step has formed light-extraction layer 106B, and it is the SiN film that possesses pleated structure, and this pleated structure has the projection of 200nm size, the spacing of 300nm and the height (Figure 15 F) of 400nm.
After this, the exposed n-GaN layer 1203 of part by composition is so that be formed for forming the space (Figure 15 G) of n type electrode on the n-GaN layer.At last, form n type electrode 1209 and p type pad electrode 1210 to obtain light emitting semiconductor device (Figure 15 H).
Independently, make relatively light emitting semiconductor device (comparative example 19).For the manufacturing of comparator device, except only being provided, the pad electrode that is connected to fine rule comes substituted metal electrode layer and the light-extraction layer, repeat the step of example 19.Each device all is cut into the square size of 1mm, and estimates characteristic in the mode of bare chip with comparing.Found that when electric current was 1A, the forward voltage of the device of example 19 was 0.25V, it is less than the forward voltage of the device of comparative example 19.And when electric current was 500mA, the brightness of the light of the device of example 19 emission was 1.8 times of device of comparative example 19.
Though described some embodiment, and only enumerated these embodiment by the mode of example, this is not intended to limit the scope of the invention.In fact, the method and system of novelty described herein can multiple other forms be implemented; And, under the situation that does not break away from spirit of the present invention, can carry out variously deleting, replacing and change to method and system as herein described.Claim of enclosing and equivalents thereof are intended to contain these forms or improvement, and also fall in the scope and spirit of the present invention.
Claims (22)
1. light emitting semiconductor device comprises:
Substrate,
Compound semiconductor layer is formed on the surface of described substrate,
Metal electrode layer is formed on the described compound semiconductor layer, and its thickness is not less than 10nm but is not more than 50nm,
Light-extraction layer is formed on the described metal electrode layer, and
Counterelectrode is formed on another surface of described substrate;
Wherein,
Described metal electrode layer comprises:
The metal part, it is continuous, so that wherein any a pair of some position all be to connect continuously and do not disconnect, and
A plurality of openings pass that described metal electrode layer and its equivalent diameter are not less than 10nm but less than 5 μ m; And
Described light-extraction layer covers the described metal part of described metal electrode layer at least in part, and has the thickness that is not less than 20nm but is not more than 120nm.
2. device according to claim 1, wherein said metal electrode layer mainly comprises Ag or Au, and further comprises at least a element that is selected from the group of being made up of Al, Zn, Zr, Si, Ge, Pt, Rh, Ni, Pd, Cu, Sn, C, Mg, Cr, Te, Se and Ti.
3. device according to claim 1, wherein said light-extraction layer are dielectric film or nesa coating.
4. device according to claim 1, wherein said light-extraction layer have and are not less than 1.8 but be not more than 2.5 refractive index.
5. device according to claim 1, wherein said metal electrode layer occupies 1mm
2Or bigger area.
6. device according to claim 1, wherein said metal electrode layer and described compound semiconductor layer keep ohmic contact.
7. device according to claim 1, wherein said metal electrode layer have 10 Ω/ or littler sheet resistance.
8. device according to claim 1, wherein said metal electrode layer have 10% or bigger light transmission under the light wavelength that described compound semiconductor layer sends.
9. light-emitting device, it comprises light emitting semiconductor device according to claim 1.
10. a method that is used to make light emitting semiconductor device according to claim 1 comprises the steps:
On substrate, form compound semiconductor layer,
On described compound semiconductor layer, form metal electrode layer,
On described metal electrode layer, form light-extraction layer, and
On the side opposite of described substrate, form counter electrode layer with described compound semiconductor layer; Wherein,
The step of described formation metal electrode layer further comprises following substep:
Form thin metal layer,
Apply at least a portion of described thin metal layer with the synthetic that comprises block copolymer, forming block copolymer film,
Described block copolymer is separated, and is the film micro area of dot pattern with the formation form, and
Utilize described point-like figure film micro area to come the described thin metal layer of etching, possess the described metal electrode layer of opening with formation as etching mask.
11. a method that is used to make light emitting semiconductor device according to claim 1 comprises the steps:
On substrate, form compound semiconductor layer,
On described compound semiconductor layer, form metal electrode layer,
On described metal electrode layer, form light-extraction layer, and
On the side opposite of described substrate, form counter electrode layer with described compound semiconductor layer;
Wherein,
The step of described formation metal electrode layer further comprises following substep:
Form thin metal layer,
The preparation pressing mold, its surface has the fine relief pattern of the shape of the described metal electrode layer that forms corresponding to hope,
Utilize described pressing mold that resist pattern is transferred at least a portion of described thin metal layer, and
Utilize described resist pattern on described thin metal layer, to form opening as etching mask.
12. a light emitting semiconductor device comprises:
Substrate,
Compound semiconductor layer is formed on the surface of described substrate,
Metal electrode layer, it is formed on the described compound semiconductor layer, and has the thickness that is not less than 10nm but is not more than 50nm,
Light-extraction layer, it is formed on the described metal electrode layer, and has fine pleated structure, and
Counterelectrode, it is formed on another surface of described substrate;
Wherein,
Described metal electrode layer comprises:
The metal part, it is continuous, so that wherein any a pair of some position all be to connect continuously and do not disconnect, and
A plurality of openings pass that described metal electrode layer and its equivalent diameter are not less than 10nm but less than 5 μ m; And
Described light-extraction layer covers the described metal part of described metal electrode layer at least in part, and the described pleated structure of described light-extraction layer has projection, described projection is set to spacing between their summit and is not less than 100nm but is not more than 600nm, and these summits height of starting at from the surface of described metal electrode layer is not less than 200nm but is not more than 700nm.
13. device according to claim 12, wherein said metal electrode layer mainly comprises Ag or Au, and further comprises at least a element that is selected from the group of being made up of Al, Zn, Zr, Si, Ge, Pt, Rh, Ni, Pd, Cu, Sn, C, Mg, Cr, Te, Se and Ti.
14. device according to claim 12, wherein said light-extraction layer are dielectric film or nesa coating.
15. having, device according to claim 12, wherein said light-extraction layer be not less than 1.8 but be not more than 2.5 refractive index.
16. device according to claim 12, wherein said metal electrode layer occupies 1mm
2Or bigger area.
17. device according to claim 12, wherein said metal electrode layer and described compound semiconductor layer keep ohmic contact.
18. device according to claim 12, wherein said metal electrode layer have 10 Ω/ or littler sheet resistance.
19. device according to claim 12, wherein said metal electrode layer have 10% or bigger light transmission under the light wavelength that described compound semiconductor layer sends.
20. a light-emitting device, it comprises light emitting semiconductor device according to claim 12.
21. a method that is used to make light emitting semiconductor device according to claim 12 comprises the steps:
On substrate, form compound semiconductor layer,
On described compound semiconductor layer, form metal electrode layer,
On described metal electrode layer, form light-extraction layer, and
On the side opposite of described substrate, form counter electrode layer with described compound semiconductor layer;
Wherein,
The step of described formation metal electrode layer further comprises following substep:
Form thin metal layer,
Apply at least a portion of described thin metal layer with the synthetic that comprises block copolymer, forming block copolymer film,
Described block copolymer is separated, and is the film micro area of dot pattern with the formation form, and
Utilize described point-like figure film micro area to come the described thin metal layer of etching, possess the described metal electrode layer of opening with formation as etching mask.
22. a method that is used to make light emitting semiconductor device according to claim 12 comprises the steps:
On substrate, form compound semiconductor layer,
On described compound semiconductor layer, form metal electrode layer,
On described metal electrode layer, form light-extraction layer, and
On the side opposite of described substrate, form counter electrode layer with described compound semiconductor layer; Wherein,
The step of described formation metal electrode layer further comprises following substep:
Form thin metal layer,
The preparation pressing mold, its surface has the fine relief pattern of the shape of the described metal electrode layer that forms corresponding to hope,
Utilize described pressing mold that resist pattern is transferred at least a portion of described thin metal layer, and
Utilize described resist pattern on described thin metal layer, to form opening as etching mask.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010052809A JP5284300B2 (en) | 2010-03-10 | 2010-03-10 | Semiconductor light emitting element, lighting device using the same, and method for manufacturing semiconductor light emitting element |
| JP052809/2010 | 2010-03-10 |
Publications (2)
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| US (2) | US8680549B2 (en) |
| JP (1) | JP5284300B2 (en) |
| KR (2) | KR101265911B1 (en) |
| CN (1) | CN102194954B (en) |
| TW (1) | TWI481076B (en) |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN102194954B (en) | 2015-07-29 |
| US20110220936A1 (en) | 2011-09-15 |
| KR20110102121A (en) | 2011-09-16 |
| JP2011187787A (en) | 2011-09-22 |
| KR20130038893A (en) | 2013-04-18 |
| TWI481076B (en) | 2015-04-11 |
| KR101265911B1 (en) | 2013-05-22 |
| US20140145232A1 (en) | 2014-05-29 |
| TW201131814A (en) | 2011-09-16 |
| US9040324B2 (en) | 2015-05-26 |
| US8680549B2 (en) | 2014-03-25 |
| JP5284300B2 (en) | 2013-09-11 |
| KR101388832B1 (en) | 2014-04-23 |
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