CN102194559A - Thermistor component and manufacturing method thereof - Google Patents
Thermistor component and manufacturing method thereof Download PDFInfo
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- CN102194559A CN102194559A CN2011100376529A CN201110037652A CN102194559A CN 102194559 A CN102194559 A CN 102194559A CN 2011100376529 A CN2011100376529 A CN 2011100376529A CN 201110037652 A CN201110037652 A CN 201110037652A CN 102194559 A CN102194559 A CN 102194559A
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Abstract
The present invention provides a thermistor component and a manufacturing method thereof. The thermistor component can greatly increase an impedance value compared with a prior-art structure while an amount of insulators is restrained. The thermistor component is provided with the following components: a plate-shaped metal oxide sintered member (2); insulation layers (3) which are formed on an upper surface and a lower surface of the metal oxide sintered member (2) except for an electrode jointing part (2a); and a pair of electrode layers (4) which are at least formed on the electrode jointing part (2a) on the upper surface and the lower surface of the metal oxide sintered member (2). Furthermore, the raw material of the metal oxide sintered member (2) is mixed with the insulation material which has one part that is precipitated on one surface through a form of insulation film through sintering. The insulation layers (3) are insulation films which are precipitated on the surface in sintering the metal oxide sintered member (2).
Description
Technical field
The present invention relates to a kind of thermistor element and manufacture method thereof that for example is used for the relevant temperature measurement that waits with automobile.
Background technology
Generally, the temperature sensor as catalyst temperature around the metering automobile engine or exhaust system temperature etc. adopts thermistor temperature sensor.The thermistor element that is used for this thermistor temperature sensor uses the sintered body element of the oxide semiconductor with big negative temperature coefficient for example as the temperature sensor of above-mentioned automobile corresponding technology, information equipment, communication equipment, medical device, residential equipment machine etc.
Usually, measure temperature in order to utilize thermistor element, be connected in series thermistor element and the pull-up resistor about 1k Ω and the voltage of outer addend V usually, mensuration puts on the voltage at its resistance two ends and is scaled temperature.Therefore,, measuring temperature range, requiring resistance value below tens of k Ω, requiring resistance value more than tens of Ω at high temperature side at low temperature side as the resistance value of thermistor element.And,, require by measuring temperature from low temperature to high temperature with wide-range with the obligationization of the self-diagnosable system that is called OBD (On Board Diagnosis) headed by the automobile industry in recent years.
Enlarge along with measuring temperature province, require the wide-range characteristic more stable with respect to the change in impedance value of temperature, promptly require the B constant little, also requiring the B constant according to purposes is about 2000K.On the other hand, if the B constant diminishes, then unit area impedance also is in the tendency that diminishes, so generally use with the size of common sensor element, resistance value became low and very difficult and realizes with the thermistor material monomer.
Therefore,, for example in patent documentation 1, propose to have following method:, on thermistor material, increase insulator and be made as the mixed sintering body in order to improve resistance value in the past.
Patent documentation 1: the open 2009-88494 communique of Japan Patent
In above-mentioned conventional art, leave following problem.
That is, being made as increases the mixed sintering of insulator body in the past and improves in the method for resistance value, along with the B constant diminishes, need increase the insulator of suitable ratio in order to embody desirable characteristic.Therefore, in the method, the little by little deviation of the insulation scale of construction will be related to the deviation of resistance value, exists to be difficult to stable problem points of making.
Summary of the invention
The present invention finishes in view of above-mentioned problem, and its purpose is to provide a kind of thermistor element and manufacture method thereof that improves resistance value when can suppress to insulate the scale of construction than structure in the past by a larger margin.
The present invention has adopted following structure in order to solve described problem.That is, thermistor element of the present invention is characterised in that possessing has: tabular metal oxide sintered body; Insulating barrier is formed on respectively except the top and bottom as this metal oxide sintered body this part of electrode engagement portion; And pair of electrode layers, be formed at described electrode engagement portion at least in the top and bottom of described metal oxide sintered body.
In this thermistor element, because possess insulating barrier and pair of electrode layers arranged, described insulating barrier is formed on respectively except the top and bottom as the metal oxide sintered body this part of electrode engagement portion, described electrode layer is formed at electrode engagement portion at least in the top and bottom of metal oxide sintered body, so electrode layer only is electrode engagement portion and the reduction of active electrode area with engaging of metal oxide sintered body, therefore the insulator that need not increase in the metal oxide sintered body just can improve resistance value.And, compare with the situation of insulator in increasing metal oxide sintered body, can reduce the deviation of resistance value with the thermistor element of the present invention that reduces this active electrode area.
And, thermistor element of the present invention is characterised in that, be mixed with in the raw material of described metal oxide sintered body by sintering and make the part insulating material of separating out with the form of insulation film on the surface, described insulating barrier is for separating out the insulation film in the surface when the described metal oxide sintered body sintering.
And the manufacture method of thermistor element of the present invention is characterised in that, comprising: in the operation that forms insulating barrier respectively except the top and bottom as the tabular metal oxide sintered body this part of electrode engagement portion; And the operation that forms pair of electrode layers in the described at least electrode engagement portion of the top and bottom of described metal oxide sintered body, mix the insulating material that a part is separated out by sintering on the surface with the form of insulation film in the raw material of described metal oxide sintered body, in the operation that forms described insulating barrier, by sintering described insulation film is separated out in the surface of described metal oxide sintered body and form described insulating barrier.
Promptly, in these thermistor elements and manufacture method thereof, because insulating barrier is for separating out the insulation film in the surface when the metal oxide sintered body sintering, so can automatically form simultaneously insulating barrier with sintering, the situation that forms the operation of insulating barrier than the surface that is arranged on the metal oxide sintered body behind the sintering in addition more can be reduced process number.And, can improve the resistance value of metal oxide sintered body self according to the insulating material of the raw material that is mixed in metal oxide sintered body.
And thermistor element of the present invention is characterised in that described metal oxide sintered body is by general formula: (1-z) ABO
3+ zY
2O
3(wherein, ABO
3Be perofskite type oxide, 0＜z≤0.8) expression the composite oxides sintered body, described insulating barrier is Y
2O
3Layer.
And the manufacture method of thermistor element of the present invention is characterised in that described metal oxide sintered body is by general formula: (1-z) ABO
3+ zY
2O
3(wherein, ABO
3Be perofskite type oxide, 0＜z≤0.8) expression the composite oxides sintered body, described insulating barrier is Y
2O
3Layer.
That is, in these thermistor elements and manufacture method thereof, because metal oxide sintered body is by general formula: (1-z) ABO
3+ zY
2O
3(wherein, ABO
3Be perofskite type oxide, 0＜z≤0.8) the composite oxides sintered body of expression, and insulating barrier is Y
2O
3So layer is according to the Y that separates out with the form of the high good insulation performance film of insulating properties
2O
3Layer can access the little resistance value characteristic of deviation.
Especially, the preferable alloy oxidate sintered body is by general formula: (1-z) (Y
1-yLa
y) (Cr
1-xMn
x) O
3+ zY
2O
3The material of (wherein, 0.0≤x≤1.0,0.0≤y≤1.0,0＜z≤0.8) expression.
And thermistor element of the present invention is characterised in that possessing has: couple of conductor is connected in described pair of electrode layers; And mold, seal the coupling part of described metal oxide sintered body and described lead with glass or heat stable resin.
That is, in this thermistor element, because with the mold sealing metal oxidate sintered body of glass or heat stable resin and the coupling part of lead, so can improve environment resistant from atmosphere blocking metal oxide sintered body according to mold.
And the manufacture method of thermistor element of the present invention is characterised in that to have: the operation that forms described insulating barrier on the two sides of described metal oxide sintered body on the whole; And laser radiation come the local operation that described insulating barrier forms described electrode engagement portion of removing to the part of described insulating barrier.
Promptly, in the manufacture method of this thermistor element, because laser radiation is locally removed insulating barrier and is formed electrode engagement portion to the part of insulating barrier, thus can only make the part of irradiating laser expose metal oxide sintered body, and can form electrode engagement portion in a narrow margin accurately.
And the manufacture method of thermistor element of the present invention is characterised in that to have: the operation that forms described insulating barrier on the two sides of described metal oxide sintered body on the whole; And the part of described insulating barrier removed the operation that described insulating barrier forms described electrode engagement portion by sand-blast.
That is, in the manufacture method of this thermistor element, because being removed insulating barrier by sand-blast, the part of insulating barrier forms electrode engagement portion, so in laser radiation, can not bring thermal impact etc. to metal oxide sintered body.
The invention effect
Obtain following effect according to the present invention.
Promptly, according to thermistor element involved in the present invention and manufacture method thereof, because possess insulating barrier and pair of electrode layers arranged, described insulating barrier is formed on respectively except the top and bottom as the metal oxide sintered body this part of electrode engagement portion, described electrode layer is formed at electrode engagement portion at least in the top and bottom of metal oxide sintered body, so when can reduce the active electrode area and improve resistance value, compare with the situation of insulator in increasing metal oxide sintered body, more can reduce the deviation of resistance value.
Thereby, the resistance value deviation was little when thermistor element of the present invention was the high impedance rate, can to the broad range of high-temperature area, carry out high-precision mensuration at low-temperature region, especially be suitable as and detect the automobile engine catalyst temperature on every side or the broad range mensuration temperature sensor of exhaust system temperature.
Description of drawings
Fig. 1 is the profile of expression thermistor element in the execution mode of thermistor element involved in the present invention and manufacture method thereof.
Fig. 2 is the figure that schematically represents the major part section of metal oxide sintered body in the present embodiment.
Fig. 3 represents in the manufacture method of thermistor element vertical view to electrode forming process by process sequence in the present embodiment.
Fig. 4 is the vertical view of the cutting action of the manufacture method of expression thermistor element in the present embodiment.
Fig. 5 is the vertical view and the profile of the thermistor element after the expression cutting in the present embodiment.
Symbol description
The 1-thermistor element, 2-metal oxide sintered body, 2a-electrode engagement portion, 3-insulating barrier, 4-electrode layer, 5-lead, 6-mold, the wafer of W-metal oxide sintered body.
Embodiment
Below, an execution mode of thermistor element involved in the present invention and manufacture method thereof is described referring to figs. 1 through Fig. 5.In addition, be used for each accompanying drawing of following explanation,, suitably changing engineer's scale according to necessity for each parts being made as the size that to discern or discern easily.
As shown in Figure 1, the thermistor element 1 of present embodiment possesses has: tabular metal oxide sintered body 2; Insulating barrier 3 is formed on respectively except the top and bottom as this metal oxide sintered body 2 this part of the 2a of electrode engagement portion; Pair of electrode layers 4 is formed at the 2a of electrode engagement portion at least in the top and bottom of metal oxide sintered body 2; Couple of conductor 5 is connected in pair of electrode layers 4; Mold 6 is with the coupling part of glass or heat stable resin sealing metal oxidate sintered body 2 and lead 5.
Be mixed with the insulating material that a part is separated out by sintering on the surface with the form of insulation film in the raw material of above-mentioned metal oxide sintered body 2, as shown in Figure 2, described insulating barrier 3 is for separating out the insulation film in the surface when metal oxide sintered body 2 sintering.
Metal oxide sintered body 2 is by general formula: (1-z) ABO
3+ zY
2O
3(wherein, ABO
3Be perofskite type oxide, 0＜z≤0.8) expression the composite oxides sintered body, insulating barrier 3 is Y
2O
3Layer.Especially, metal oxide sintered body 2 is by general formula: (1-z) (Y
1-yLa
y) (Cr
1-xMn
x) O
3+ zY
2O
3The material of (wherein, 0.0≤x≤1.0,0.0≤y≤1.0,0＜z≤0.8) expression.
In addition, in Fig. 2, the white figure signal face of land has shown Y
2O
3Crystal grain A, the black figure signal face of land has shown the crystal grain B of perofskite type oxide.
And, as above-mentioned Y
2O
3The layer thickness of the insulating barrier 3 of layer forms more than the 3 μ m.The bed thickness of especially preferred insulating barrier 3 is below the 10 μ m.
Above-mentioned electrode layer 4 is for example for the Pt film of whole of top and bottom being formed at metal oxide sintered body 2 with sputter etc.
The above-mentioned electrode engagement 2a of portion forms a pair of with respect to top and bottom respectively with linearity.
Above-mentioned lead 5 for example is a platinum line.
These leads 5 utilize the welding electrode 7 of Ag to be fixed in pair of electrode layers 4.
Then, with reference to Fig. 3 to Fig. 5 the manufacture method of this thermistor element 1 is described.
The manufacture method of the thermistor element 1 of present embodiment has: in the operation that forms insulating barrier 3 respectively except the top and bottom as the tabular metal oxide sintered body 2 this part of the 2a of electrode engagement portion; And the operation that forms pair of electrode layers 4 at the 2a of portion of electrode engagement at least of the top and bottom of metal oxide sintered body 2.
In this manufacture method, in the raw material of metal oxide sintered body 2, mix the insulating material that a part is separated out by sintering on the surface with the form of insulation film, in the operation that forms insulating barrier 3, by sintering insulation film is separated out in the surface of metal oxide sintered body 2 and form insulating barrier 3.
And, in the operation that forms insulating barrier 3, preferably form insulating barrier 3 on the whole on the two sides of metal oxide sintered body 2, laser radiation is come local removal insulating barrier 3 and forms the electrode engagement 2a of portion to the part of insulating barrier 3.
In addition, except forming the electrode engagement 2a of portion, can also adopt the part of insulating barrier 3 is removed the operation that insulating barrier 3 forms the 2a of electrode engagement portion by sand-blast by above-mentioned laser radiation.
Below, an example of the manufacture method of above-mentioned thermistor element 1 is described.
At first, weighing La
2O
3, Cr
2O
3And MnO
2Each powder after put into ball mill, put into Zr ball and pure water in right amount and carry out about 24 hours mixing.Take out the thing of above-mentioned mixing and make it dry and under 1100 ℃, burnt till 5 hours afterwards, for example obtain in above-mentioned general formula, being made as x=0.5 the La (Cr of y=1.0
0.5Mn
0.5) O
3The calcining powder.Be this calcining powder and Y by weighing
2O
3Become 40: 60 (mol%) and add Y
2O
3Powder adds solvent and adhesive again and casts the green sheet of making 100 μ m thickness as mud.
Afterwards, overlapping 3 layers of this green sheet and carry out the lamination sheets of the about 0.3mm of the incompatible making thickness of thermo-compressed with stamping machine.Then, shown in Fig. 3 (a), lamination sheets is cut into the size of 50mm * 50mm, under 1550 ℃, burn till the wafer W of making metal oxide sintered body 2 in 5 hours.At this moment, burn till the back and separate out the Y of thickness in the top and bottom of wafer W for number μ m
2O
3Insulating barrier 3.
And, shown in Fig. 3 (b), with laser machine with amplitude 30 μ m on the surperficial linearity ground of wafer W irradiating laser repeatedly, insulating barrier 3 is removed in the zone that only contacts laser, thereby forms the 2a of electrode engagement portion of a plurality of linearities that the conductor layer that makes thermistor element 1 exposes.Then, shown in Fig. 3 (c), form electrode layer 4 at the surperficial whole sputter Pt of insulating barrier 3 and the 2a of electrode engagement portion.And, not only to above the wafer W, to following these operations of carrying out too.
Then, as Fig. 4 and shown in Figure 5, by cutting machine wafer W is cut into clathrate and cut out the laminar of 0.4mm angle.In addition, the double dot dash line among Fig. 4 is the example that cuts out line by cutting machine.Afterwards, utilize the welding electrode 7 of Ag that couple of conductor 5 is fixed in pair of electrode layers 4, in addition, apply glass mold by coupling part and form mold 6, thereby make thermistor element 1 at metal oxide sintered body 2 and lead 5.
So, in the thermistor element 1 of present embodiment, because possess insulating barrier 3 and pair of electrode layers 4 arranged, described insulating barrier is formed on respectively except the top and bottom as the metal oxide sintered body 2 this part of the 2a of electrode engagement portion, described electrode layer is formed at the 2a of electrode engagement portion at least in the top and bottom of metal oxide sintered body 2, so electrode layer 4 only is 2a of electrode engagement portion and reduction active electrode area with engaging of metal oxide sintered body 2, so does not increase the insulator (Y in the metal oxide sintered body 2
2O
3) just can improve resistance value.
And, in the thermistor element 1 of the present embodiment that reduces this active electrode area, with the insulator (Y that increases in the metal oxide sintered body 2
2O
3) situation compare, more can reduce the deviation of resistance value.
In addition, because insulating barrier 3 is for separating out the insulation film in the surface when metal oxide sintered body 2 sintering, so can automatically form simultaneously insulating barrier 3 with sintering, more can reduce process number than the situation that forms the operation of insulating barrier 3 on the surface that is arranged on the metal oxide sintered body 2 behind the sintering in addition.And, according to the insulating material (Y in the raw material that is mixed in metal oxide sintered body 2
2O
3), can improve the resistance value of metal oxide sintered body 2 self.
And metal oxide sintered body 2 is by general formula: (1-z) ABO
3+ zY
2O
3(wherein, ABO
3Be perofskite type oxide, 0＜z≤0.8) expression the composite oxides sintered body, insulating barrier 3 is Y
2O
3So layer is according to the Y that separates out with the form of the high good insulation performance film of insulating properties
2O
3Layer can access the little resistance value characteristic of deviation.
And, because with the mold 6 sealing metal oxidate sintered bodies 2 of glass or heat stable resin and the coupling part of lead 5, so can improve environment resistant from atmosphere blocking metal oxide sintered body 2 according to mold 6.
And the local insulating barrier 3 of removing forms the electrode engagement 2a of portion because the part of insulating barrier 3 is arrived in laser radiation, thus can only make the part of irradiating laser expose metal oxide sintered body 2, and can form the 2a of electrode engagement portion in a narrow margin accurately.And, if adopt the part of insulating barrier 3 is removed the method that insulating barrier 3 forms electrode engagement portion by sand-blast, then in laser radiation, can not bring thermal impact etc. to metal oxide sintered body 2.
[embodiment 1]
Then, in the manufacture method of the thermistor element of above-mentioned execution mode, the basic composition of metal oxide sintered body is made as La (Cr, Mn) O
3+ 0.6Y
2O
3(ρ=80 Ω cm, B=2000K) changes and a plurality of embodiment of actual fabrication the illumination amplitude (amplitude of electrode engagement portion) of laser, and the deviation (standard deviation) of resistance value estimated, and it be the results are shown in following table 1.
In addition, the lamina dimensions of metal oxide sintered body is made as amplitude W:0.4mm * length L: 0.4mm * thickness T: 0.2mm.
With the corresponding resistance value under 25 ℃ (R25) of each laser radiation amplitude, add the Y that is used to obtain the unit area impedance identical with these
2O
3The time amount and this moment resistance value deviation (standard deviation) also be shown in Table 1 in the lump.
[table 1]
| Illumination amplitude (μ m) | Resistance value | 6 (standard deviations) | Necessary Y 2O 3Amount | 6 (standard deviations) |
| 0 | ＞10^6Ω | - |
| 10 | 35kΩ | 1.2kΩ | About 0.74mol% | 4kΩ |
| 20 | 18kΩ | 0.3kΩ | About 0.73mol% | 1kΩ |
| 40 | 8kΩ | 0.1kΩ | About 0.71mol% | 0.3kΩ |
| 100 | 3.5kΩ | 0.01kΩ | About 0.67mol% | 0.02kΩ |
As known from Table 1, in the time of will rising to same impedance value, remove insulation film according to laser radiation and reduce the structure of the present invention of electrode area and method for making than just increasing Y
2O
3Insulating material make situation that resistance value rises on the whole deviation become still less.Especially effective when needs improve resistance value significantly.
In addition, technical scope of the present invention is not limited to above-mentioned execution mode and the foregoing description, can append various changes without departing from the spirit and scope of the present invention.
For example, as above-mentioned, the insulation film that preferred insulating barrier is separated out during with sintering forms, but also can be behind sintering in addition with sputter etc. at the top and bottom of metal oxide sintered body formation insulating barrier.
Claims (10)
1. a thermistor element is characterized in that, possessing has:
Tabular metal oxide sintered body;
Insulating barrier is formed on respectively except the top and bottom as this metal oxide sintered body this part of electrode engagement portion; And
Pair of electrode layers is formed at described electrode engagement portion at least in the top and bottom of described metal oxide sintered body.
2. thermistor element as claimed in claim 1 is characterized in that,
In the raw material of described metal oxide sintered body, be mixed with the insulating material that a part is separated out by sintering on the surface with the form of insulation film,
Described insulating barrier is for separating out the insulation film in the surface when the described metal oxide sintered body sintering.
3. thermistor element as claimed in claim 2 is characterized in that,
Described metal oxide sintered body is by general formula: (1-z) ABO
3+ zY
2O
3The composite oxides sintered body of expression, wherein, ABO
3Be perofskite type oxide, 0＜z≤0.8,
Described insulating barrier is Y
2O
3Layer.
4. thermistor element as claimed in claim 3 is characterized in that,
Described metal oxide sintered body is by general formula: (1-z) (Y
1-yLa
y) (Cr
1-xMn
x) O
3+ zY
2O
3The material of expression, wherein, 0.0≤x≤1.0,0.0≤y≤1.0,0＜z≤0.8.
5. as each the described thermistor element in the claim 1 to 4, it is characterized in that possessing:
Couple of conductor is connected in described pair of electrode layers; And
Mold seals the coupling part of described metal oxide sintered body and described lead with glass or heat stable resin.
6. the manufacture method of a thermistor element is characterized in that, has:
In the operation that forms insulating barrier respectively except top and bottom as the tabular metal oxide sintered body this part of electrode engagement portion; And
Form the operation of pair of electrode layers in the described at least electrode engagement portion of the top and bottom of described metal oxide sintered body,
In the raw material of described metal oxide sintered body, mix the insulating material that a part is separated out by sintering on the surface with the form of insulation film,
In the operation that forms described insulating barrier, by sintering described insulation film is separated out in the surface of described metal oxide sintered body and form described insulating barrier.
7. the manufacture method of thermistor element as claimed in claim 6 is characterized in that,
Described metal oxide sintered body is by general formula: (1-z) ABO
3+ zY
2O
3The metal oxide sintered body of expression, wherein, ABO
3Be perofskite type oxide, 0＜z≤0.8,
Described insulating barrier is Y
2O
3Layer.
8. the manufacture method of thermistor element as claimed in claim 7 is characterized in that,
Described metal oxide sintered body is by general formula: (1-z) (Y
1-yLa
y) (Cr
1-xMn
x) O
3+ zY
2O
3The material of expression, wherein, 0.0≤x≤1.0,0.0≤y≤1.0,0＜z≤0.8.
9. as the manufacture method of each the described thermistor element in the claim 6 to 8, it is characterized in that, have:
Form the operation of described insulating barrier on the whole on the two sides of described metal oxide sintered body; And
Laser radiation is locally removed described insulating barrier and form the operation of described electrode engagement portion to the part of described insulating barrier.
10. as the manufacture method of each the described thermistor element in the claim 6 to 8, it is characterized in that, have:
Form the operation of described insulating barrier on the whole on the two sides of described metal oxide sintered body; And
The part of described insulating barrier is removed the operation that described insulating barrier forms described electrode engagement portion by sand-blast.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010061052A JP5413600B2 (en) | 2010-03-17 | 2010-03-17 | THERMISTOR ELEMENT AND MANUFACTURING METHOD THEREOF |
| JP2010-061052 | 2010-03-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102194559A true CN102194559A (en) | 2011-09-21 |
Family
ID=44602461
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011100376529A Pending CN102194559A (en) | 2010-03-17 | 2011-02-11 | Thermistor component and manufacturing method thereof |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP5413600B2 (en) |
| CN (1) | CN102194559A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102627458A (en) * | 2012-05-04 | 2012-08-08 | 中国科学院新疆理化技术研究所 | Wide-warm-area negative temperature coefficient thermistor material |
| CN105261432A (en) * | 2015-11-05 | 2016-01-20 | 广东爱晟电子科技有限公司 | Slurry for thermosetting thick film thermistor, and thermistor prepared from slurry |
| CN112876232A (en) * | 2021-01-26 | 2021-06-01 | 南京理工大学 | High-temperature NTC thermal sensitive ceramic material and discharge plasma sintering method thereof |
| WO2022151673A1 (en) * | 2021-01-13 | 2022-07-21 | 江苏新林芝电子科技股份有限公司 | Positive temperature coefficient ceramic thermistor element having strong reducing atmosphere resistance and preparation method therefor |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6480002A (en) * | 1987-09-21 | 1989-03-24 | Chichibu Cement Kk | Nonlinear resistor |
| JP3928244B2 (en) * | 1998-02-27 | 2007-06-13 | 株式会社日本自動車部品総合研究所 | THERMISTOR ELEMENT AND MANUFACTURING METHOD THEREOF |
| JP2002141204A (en) * | 2000-11-01 | 2002-05-17 | Koa Corp | Thermistor and its manufacturing method |
| JP4165169B2 (en) * | 2002-09-30 | 2008-10-15 | 三菱マテリアル株式会社 | Manufacturing method of flake type thermistor |
-
2010
- 2010-03-17 JP JP2010061052A patent/JP5413600B2/en not_active Expired - Fee Related
-
2011
- 2011-02-11 CN CN2011100376529A patent/CN102194559A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102627458A (en) * | 2012-05-04 | 2012-08-08 | 中国科学院新疆理化技术研究所 | Wide-warm-area negative temperature coefficient thermistor material |
| CN105261432A (en) * | 2015-11-05 | 2016-01-20 | 广东爱晟电子科技有限公司 | Slurry for thermosetting thick film thermistor, and thermistor prepared from slurry |
| WO2022151673A1 (en) * | 2021-01-13 | 2022-07-21 | 江苏新林芝电子科技股份有限公司 | Positive temperature coefficient ceramic thermistor element having strong reducing atmosphere resistance and preparation method therefor |
| CN112876232A (en) * | 2021-01-26 | 2021-06-01 | 南京理工大学 | High-temperature NTC thermal sensitive ceramic material and discharge plasma sintering method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2011198818A (en) | 2011-10-06 |
| JP5413600B2 (en) | 2014-02-12 |
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Application publication date: 20110921 |