CN102191563B - Preparation method of codoped silicon-base impurity intermediate belt material - Google Patents
Preparation method of codoped silicon-base impurity intermediate belt material Download PDFInfo
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- CN102191563B CN102191563B CN201110102926A CN201110102926A CN102191563B CN 102191563 B CN102191563 B CN 102191563B CN 201110102926 A CN201110102926 A CN 201110102926A CN 201110102926 A CN201110102926 A CN 201110102926A CN 102191563 B CN102191563 B CN 102191563B
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Abstract
The invention relates to a preparation method of a codoped silicon-base impurity intermediate belt material, which comprises the following steps: 1. taking a silicon wafer; 2. implanting Al into the silicon wafer; 3. implanting a transitional metal element into the silicon wafer containing Al; and 4. carrying out annealing treatment on the silicon wafer containing Al and transitional metal element, thereby preparing the codoped silicon-base impurity intermediate belt material.
Description
Technical field
The present invention relates to the new forms of energy photovoltaic technology, be meant a kind of preparation method of the middle carrying material of silica-based impurity of codope especially.
Background technology
Solar cell be utilize solar energy the most effectively, the most a kind of mode, low-cost and high efficiency always is solar battery technology power of development and target.Be representative first generation solar cell with monocrystalline silicon and be that the second generation solar cell of representative all can't satisfy high efficiency and requirement cheaply simultaneously with the amorphous silicon membrane.With batteries such as lamination solar cell and middle band solar cells is the collision problem that the third generation solar cell of representative has then solved high efficiency and cost well.
Utilize band solar cell in the middle of the silica-based impurity that the deep-level impurity doping techniques forms, except realizing that general crystal silicon battery to the absorbing of visible light wave range, can also realize the two photon absorption utilization to infrared band.The band solar cell improves the short circuit current of battery in the middle of the impurity of silicon when not changing open circuit voltage, thereby improves the conversion efficiency of intermediate solar cell.
The middle band of impurity solar cell has various advantages, but but is faced with a technical bottleneck at present, and the nearly all solid solubility of deep-level impurity element in silicon all is far smaller than these elements and in silicon, forms the Mott transformation concentration of being with in the middle of the impurity.Have only and adopt new nonequilibrium technique to improve the effective doping content of deep-level impurity element in silicon, make its doping content and reach or surpass Mott and change concentration, can realize band in the middle of the impurity.
The nonequilibrium technique that adopts at present mainly is that ion injects and laser annealing.Though these two kinds of non-equilibrium combination techniques can improve the doping content of deep-level impurity element in silicon materials, because inferior position that the laser annealing technical costs is too high and it can only be applied to the small sample processing has caused the possibility of its large-scale application.
Summary of the invention
In view of this, main purpose of the present invention is to provide the preparation method of carrying material in the middle of a kind of silica-based impurity of codope, to improve the photoelectric conversion efficiency of solar cell, has the simple advantage of manufacture craft.
In order to achieve the above object, technical scheme of the present invention is achieved in that
The present invention provides a kind of preparation method of the middle carrying material of silica-based impurity of codope, comprises the steps:
Step 1: get a silicon chip;
Step 2: in silicon chip, inject Al;
Step 3: transitional metallic element is injected in the silicon chip that contains Al;
Step 4: the silicon chip that will contain Al and transitional metallic element carries out annealing in process, accomplishes the preparation of the middle carrying material of silica-based impurity of codope.
Wherein transitional metallic element is Ti or Cr.
The mode that adopts ion to inject when wherein injecting Al, implantation dosage is 2 * 10
15Cm
-2, the energy of injection is 30eV, makes Al concentration content in silicon chip reach 3.4 * 10
20Cm
-3
The mode that adopts ion to inject when wherein injecting Ti, the injection energy is 45eV, implantation dosage is 1.7 * 10
15Cm
-2, make Ti concentration content in silicon chip reach 3.4 * 10
20Cm
-3
Wherein the temperature of annealing in process is 800-1100 ℃, and annealing time is 5-60 second.
From top technical scheme, the present invention has following effect:
The preparation method of carrying material in the middle of the silica-based impurity of codope provided by the invention is based on the method that element mixes altogether and improves the doping content of transitional metallic element in silicon.The deep-level impurity constituent content has surpassed Mott transformation concentration in this material, forms the middle band of impurity.Carrying material not only can absorb the absorbent visible spectrum of traditional crystal silicon solar batteries in the middle of this, but also can carry out two photon absorption to the solar energy infrared spectrum.The solar cell that adopts above-mentioned material to make can increase open-circuit current simultaneously not changing battery open circuit voltage.
This silicon based opto-electronics material provided by the invention is to be prepared on the silicon chip, and contains silicon as one of its major ingredients, and therefore the photoelectron of realization and silica-base material and device is integrated easily.
The preparation method of carrying material in the middle of the silica-based impurity of codope provided by the invention, the silicon based opto-electronics material that obtains can adopt the prepared various electro-optical devices compatible mutually with the processing of current silicon microelectronics, and preparation cost is low.
Description of drawings
For making the object of the invention, technical scheme and advantage clearer, below in conjunction with embodiment and accompanying drawing, to further explain of the present invention, wherein:
Fig. 1 is a flow chart of the present invention;
Fig. 2 is a band solar cell schematic diagram in the middle of the present invention.
Embodiment
See also shown in Figure 1ly, the present invention provides the preparation method of carrying material in the middle of a kind of silica-based impurity of codope, comprises the steps:
Step 1: get a silicon chip, silicon chip only requires that the silicon chip specification that reaches common experiment usefulness gets final product.The thickness of silicon chip, resistivity, relevant parameters such as crystal orientation do not have special requirement.Silicon chip cleans through peracid, removes the heavy ion and other impurity elements on surface.
Step 2: the mode that adopts ion to inject is injected into Al that implantation dosage is 2 * 10 in the silicon chip
15Cm
-2, the energy of injection is 30ev, makes Al concentration content in silicon chip reach 3.4 * 10
20Cm
-3
Step 3: transitional metallic element is injected in the silicon chip that contains Al, and this transitionality metallic element can be doped to example with Ti for Ti or Cr, the mode that adopts ion to inject, and the Ti ion implantation energy is 45ev, implantation dosage is 1.7 * 10
15Cm
-2, finally make Ti concentration content in silicon chip reach 3.4 * 10
20Cm
-3And the concentration content of Ti has been higher than the Mott phase transformation concentration of Ti far away.
Step 4: the silicon chip that will contain Al and transitional metallic element carries out annealing in process, and the temperature of described annealing is 800-1100 ℃, and annealing time is 5-60 second.
The lattice of the silicon chip after the annealed processing will be restored, and ionization appears in the Ti impurity element, the electronics that occurs moving freely.The solid solubility of Al in silicon can surpass 10
19Cm
-3, and Al and Ti at high temperature are easy to form the AlSi alloy.Because Al this " binding " effect makes the concentration of deep-level impurity element ti in silicon surpass Mott and changes concentration.The impurity local function that is caused by the Ti impurity element will be expanded, and impurity energy level degeneracy occurs and forms and can be with, and finally on the surface of silicon, has formed middle carrying material.
The middle schematic diagram of solar cell of being with according to middle carrying material is made is as shown in Figure 2, and VB, CB are respectively the valence band and the conduction bands of silicon materials, and IB then is the middle band that forms through codope.Hv, hv
1, hv
2The photon of then representing different-energy is hv through absorbing energy
2Photon can be with electronics from the valence to the centre, be hv and ought absorb energy once more
1Photon then can band transits to conduction band from the centre with electronics.When absorbing energy and be the photon of hv, can be directly with electronics from the valence to the conduction band.Solar cell through middle carrying material is made can utilize the photon less than energy gap, thereby improve the electric current and the efficient of solar cell.
Embodiment
In conjunction with consulting Fig. 1, the present invention provides a kind of preparation method of the middle carrying material of silica-based impurity of codope, comprises the steps:
Step 1: adopt crystal orientation (100) n type silicon chip, silicon chip boiled 5 minutes with the concentrated sulfuric acid, used hydrofluoric acid rinsing 30s again.
Step 2: Al is injected into implantation dosage is 2 * 10 in the silicon chip
15Cm
-2, the energy of injection is 30eV.
Step 3: the Ti ion is injected in the silicon chip that contains Al, and the injection energy is 45ev, and implantation dosage is 1.7 * 10
15Cm
-2
Step 4: the silicon chip that will contain Al and Ti ion carries out annealing in process, and temperature is 850 ℃, and annealing time is 15s.
The layer that shows at silicon has formed the middle carrying material of silica-based impurity of codope at last.
The above; Be merely the embodiment among the present invention, but protection scope of the present invention is not limited thereto, anyly is familiar with this technological people in the technical scope that the present invention disclosed; The conversion that can expect easily or replacement all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of claims.
Claims (2)
1. the preparation method of carrying material in the middle of the silica-based impurity of a codope comprises the steps:
Step 1: get a silicon chip;
Step 2: in silicon chip, inject Al, the mode of injection is to adopt ion to inject, and implantation dosage is 2 * 10
15Cm
-2, the energy of injection is 30eV, makes Al concentration content in silicon chip reach 3.4 * 10
20Cm
-3
Step 3: transitional metallic element is injected in the silicon chip that contains Al, and wherein transitional metallic element is Ti or Cr, the mode that adopts ion to inject when wherein injecting Ti, and the injection energy is 45eV, implantation dosage is 1.7 * 10
15Cm
-2, make Ti concentration content in silicon chip reach 3.4 * 10
20Cm
-3
Step 4: the silicon chip that will contain Al and transitional metallic element carries out annealing in process, accomplishes the preparation of the middle carrying material of silica-based impurity of codope.
2. the preparation method of carrying material in the middle of the silica-based impurity of codope according to claim 1, wherein the temperature of annealing in process is 800-1100 ℃, annealing time is 5-60 second.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110102926A CN102191563B (en) | 2011-04-22 | 2011-04-22 | Preparation method of codoped silicon-base impurity intermediate belt material |
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|---|---|---|---|
| CN201110102926A CN102191563B (en) | 2011-04-22 | 2011-04-22 | Preparation method of codoped silicon-base impurity intermediate belt material |
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|---|---|
| CN102191563A CN102191563A (en) | 2011-09-21 |
| CN102191563B true CN102191563B (en) | 2012-09-19 |
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| CN102544243A (en) * | 2012-03-29 | 2012-07-04 | 中国科学院半导体研究所 | Intermediate zone material of amorphous silicon film and preparation method thereof |
| CN103334155B (en) * | 2013-07-11 | 2016-06-29 | 厦门大学 | A kind of crystalline silicon material containing titana matter Intermediate Gray and preparation method thereof |
| CN103956399B (en) * | 2014-04-16 | 2017-01-11 | 江苏盎华光伏工程技术研究中心有限公司 | Silicon solar cell backboard and manufacturing method thereof |
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| US4147563A (en) * | 1978-08-09 | 1979-04-03 | The United States Of America As Represented By The United States Department Of Energy | Method for forming p-n junctions and solar-cells by laser-beam processing |
| JP2007042803A (en) * | 2005-08-02 | 2007-02-15 | Honda Motor Co Ltd | Ion implantation mask, manufacturing method thereof, silicon carbide semiconductor device using the same, and its manufacturing method |
| US7964913B2 (en) * | 2007-01-09 | 2011-06-21 | Maxpower Semiconductor, Inc. | Power MOS transistor incorporating fixed charges that balance the charge in the drift region |
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