CN102190421B - Mold for forming optical component, optical component thereof and manufacturing method of the optical component - Google Patents

Mold for forming optical component, optical component thereof and manufacturing method of the optical component Download PDF

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Publication number
CN102190421B
CN102190421B CN201010621562.XA CN201010621562A CN102190421B CN 102190421 B CN102190421 B CN 102190421B CN 201010621562 A CN201010621562 A CN 201010621562A CN 102190421 B CN102190421 B CN 102190421B
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optical element
die
upper layer
element molding
mentioned
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CN102190421A (en
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中村幸则
柏谷诚
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Fujifilm Corp
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Fujifilm Corp
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    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B11/00Pressing molten glass or performed glass reheated to equivalent low viscosity without blowing
    • C03B11/06Construction of plunger or mould
    • C03B11/08Construction of plunger or mould for making solid articles, e.g. lenses
    • C03B11/084Construction of plunger or mould for making solid articles, e.g. lenses material composition or material properties of press dies therefor
    • C03B11/086Construction of plunger or mould for making solid articles, e.g. lenses material composition or material properties of press dies therefor of coated dies

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
  • Glass Compositions (AREA)

Abstract

The present invention provides a mold for forming an optical component, an optical component and a manufacturing method of the optical component. The mold for forming the optical component is characterized in that: the mold is provided with a substrate and a surface layer; the surface layer contains Si-containing diamond-shaped carbon; the ratio (Si/C) between the content of Si in the surface layer and C is 0.01-0.05; and the thickness of the surface layer is above 2 nm and below 50 nm.

Description

The manufacture method of die for optical element molding and optical element and this optical element
Technical field
The present invention relates to die for optical element molding and used the manufacture method of optical element of this die for optical element molding and the optical element obtaining by this manufacture method.
Background technology
With regard to the manufacture method of the optical glass lens as optical element, known have a direct punching formation.Described direct punching formation, to be processed on the die for optical element molding of required face quality and surface accuracy, block to the glass as optical element material heats, or stamping to carrying out through the block of the glass of preheating, manufactures the method for optical glass lens.
In the die for optical element molding using in above-mentioned direct impact molding, make not occur on optical element slight crack (cracking), from the viewpoint such as weather resistance, release property, also require with the reactivity of optical element material low, the surface of die for optical element molding and the release property of optical element material are good, the adaptation excellence of the base material of die for optical element molding and upper layer, the frictional coefficient of the stamping surface of die for optical element molding is little, can produce at short notice optical element etc.
Up to now, in optical glass device stamping, propose by use, diamond film or diamond-like carbon film to be formed on the press forming die assembly of the optical glass device forming on mother metal, can be that glass lens carries out good stamping technology (for example,, with reference to Japanese Patent Publication 02-047411 communique) to plumbous oxide.
In addition, propose when stamping, the molding die of coating hydrogenated amorphous carbon film by using in the part of joining with glass across diamond film, technology (for example,, with reference to Japanese kokai publication hei 02-080330 communique) that can the reaction of further inhibited oxidation lead compared with above-mentioned Japanese Patent Publication 02-047411 communique.
In addition, also propose by using at die for optical element molding parent material interface kerbstone China ink more and at face side (stripping surface side) die for optical element molding that graphite is few, thereby take into account the technology (for example,, with reference to Japanese kokai publication hei 08-301625 communique) of release property and weather resistance.
In addition, propose by using the die for optical element molding less and from increasing with interface to surface (stripping surface) graphite of mother metal at parent material interface kerbstone China ink, take into account the technology (for example,, with reference to Japanese kokai publication hei 09-12320 communique) of release property and weather resistance.
In addition, propose by form diamond-like-carbon mold release film on mother metal, can significantly suppress the technology (for example,, with reference to Proc.of the XX ICG in Kyoto (2004) " GLASS PREFORM DEFORMATION AND CRACK FORMATION MECHANISM IN MOLDING PROCESS " T.Igari et al.HOYA Corporation) of the generation of slight crack (cracking).
In addition, Si-C (a-C:H:Si) film containing amorphous hydrogen by coating in the forming face of mother metal has been proposed, thereby continuous molding that can withstand prolonged and also can fully guarantee the die for optical element molding (for example,, with reference to Japanese kokai publication hei 09-194216 communique) of the performance of molding.In this scheme, record and the content of Si in a-C:H:Si film need to be set as to 10mol%~23mol%, the thickness of a-C:H:Si film is made as to the content of 50nm~150nm.This can be to think, gives flexibility (resiliency) and oilness by contain Si in above-mentioned film.
On the other hand, in order to improve the adaptation between mother metal and a-C:H:Si film, the thin thickness of preferred film.But, in the case of needing the film of shock absorption, lubrication, if the thickness attenuation of film becomes and reduced its effect, therefore there is the thickness attenuation that can not make film, cannot obtain the problem of sufficient adaptation.
In addition, in the die for optical element molding of these prior aries, use material (for example TiO that contains hyperergy as optical element material 2, Nb 2o 5, WO 3, Bi 2o 3deng) glass time, exist while shaping the problem of welding occurs, or when the lens that are shaped thin, produce the problem of slight crack (cracking) etc., weather resistance, release property can be insufficient.In addition, not only there is the base material of sufficient weather resistance, release property and die for optical element molding and the adaptation of upper layer but also good mould, also do not obtained at present.
Therefore, present situation is in the urgent need to developing the also die for optical element molding of excellence of a kind of weather resistance and the base material of release property excellence and die for optical element molding and the adaptation of upper layer.
Summary of the invention
Problem of the present invention is to solve above-mentioned all problems in the past, realizes following object.; the object of the present invention is to provide a kind of die for optical element molding; the reactivity of itself and optical element material is low; can reduce the frictional coefficient of the upper layer of optical element material and die for optical element molding; the adaptation excellence of the base material of die for optical element molding and upper layer, and release property and excellent in te pins of durability.The optical element that the present invention also provides the manufacture method of the optical element that has used this die for optical element molding and obtains by this manufacture method.
In order to solve above-mentioned problem, the inventor etc. conduct in-depth research, and result obtains following new opinion.; by making upper layer contain the diamond-like-carbon containing Si; the content of the Si of above-mentioned upper layer is the ratio (Si/C) with C in Si; be 0.01~0.05; the thickness of above-mentioned upper layer is more than 2nm and is less than 50nm; can make to reduce with the reactivity of optical element material; the frictional coefficient of the upper layer of optical element material and die for optical element molding can be reduced, the die for optical element molding of the base material of die for optical element molding and the adaptation excellence of upper layer and release property and excellent in te pins of durability can be obtained.
Can think, this be because, by reducing the thickness of upper layer, can improve the adaptation of base material and upper layer, and then Si suppresses the oxidation of C, prevent that C from, because of the oxidation disappearance of gasifying, can improve release property and weather resistance thus.
As the method for solving above-mentioned problem, as described below.,
<1> die for optical element molding,, it is characterized in that,
There is base material and upper layer,
Above-mentioned upper layer contains the diamond-like-carbon containing Si,
In above-mentioned upper layer the content of Si in Si the ratio (Si/C) with C, be 0.01~0.05,
The thickness of above-mentioned upper layer is more than 2nm and is less than 50nm.
According to the die for optical element molding described in above-mentioned <1>, wherein, the frictional coefficient of upper layer is 0.01~0.08.
The manufacture method of a <3> optical element, it is characterized in that, use the die for optical element molding described in any one in above-mentioned <1>~<2>, optical element material is shaped.
In the manufacture method of above-mentioned optical element, owing to using the die for optical element molding low with the reactivity of optical element material, thereby can suppress optical element material to die for optical element molding welding, in addition, can suppress, to the optical element transfer printing obtaining, therefore can suppress the bad of optical element.
<4> is according to the manufacture method of the optical element described in above-mentioned <3>, and wherein, optical element material contains at least one in Ti, W, Nb and Bi.
<5> optical element, it is characterized in that, manufacture by the manufacture method of the optical element described in any one in above-mentioned <3>~<4>.
According to the present invention, can solve all problems in the past, the adaptation excellence of the frictional coefficient that can provide low with the reactivity of optical element material, can reduce the upper layer of optical element material and die for optical element molding, the base material that can obtain die for optical element molding and upper layer and the die for optical element molding of release property and excellent in te pins of durability, can also provide the manufacture method of the optical element that has used this die for optical element molding and the optical element that utilizes this manufacture method to obtain.
Brief description of the drawings
Fig. 1 is the schematic diagram of plasma CVD.
Fig. 2 is the coordinate diagram that the frictional coefficient of the upper layer to die for optical element molding 1~10 compares.
Fig. 3 is stamping front explanatory view.
Explanatory view when Fig. 4 is stamping.
Fig. 5 is the surperficial MIcrosope image of the die for optical element molding 1 after 100 times of embodiment 2-1 are shaped.
Fig. 6 is the surperficial MIcrosope image of the die for optical element molding 2 after 100 times of embodiment 2-2 are shaped.
Fig. 7 is the surperficial MIcrosope image of the die for optical element molding 5 after 100 times of embodiment 2-3 are shaped.
Fig. 8 is the surperficial MIcrosope image of the die for optical element molding 1 after 100 times of embodiment 2-4 are shaped.
Fig. 9 is the surperficial MIcrosope image of the die for optical element molding 3 after 100 times of embodiment 2-5 are shaped.
Figure 10 is the surperficial MIcrosope image of the die for optical element molding 3 after 100 times of embodiment 2-6 are shaped.
Figure 11 is the surperficial MIcrosope image of the die for optical element molding 3 after 100 times of embodiment 2-7 are shaped.
Figure 12 is the surperficial MIcrosope image of the die for optical element molding 4 after 100 times of embodiment 2-8 are shaped.
Figure 13 is the surperficial MIcrosope image of the die for optical element molding 6 after 100 times of embodiment 2-9 are shaped.
Figure 14 is the surperficial MIcrosope image of the die for optical element molding 7 after 100 times of embodiment 2-10 are shaped.
Figure 15 is the surperficial MIcrosope image of the die for optical element molding 8 after 100 times of embodiment 2-11 are shaped.
Figure 16 is the surperficial MIcrosope image of the die for optical element molding 9 after 100 times of comparative example 2-1 are shaped.
Figure 17 is the surperficial MIcrosope image of the die for optical element molding 9 after 100 times of comparative example 2-2 are shaped.
Figure 18 is the surperficial MIcrosope image of the die for optical element molding 9 after 100 times of comparative example 2-3 are shaped.
Figure 19 is the surperficial MIcrosope image of the die for optical element molding 10 after 100 times of comparative example 2-4 are shaped.
Embodiment
(die for optical element molding)
Die for optical element molding of the present invention, at least has base material and upper layer, also contains other formations as required and forms.
< base material >
As material, shape, the size of above-mentioned base material, be not particularly limited, can select aptly according to object.
As the material of above-mentioned base material, for example, can enumerate superhard alloy (wolfram varbide (WC), tungsten-cobalt carbide (WC-Co) alloy etc.), silicon carbide (SiC), the silicon nitride of nitrogen boron, sintering metal, zirconium white (ZrO 2), silicon nitride (Si 3n 4), titanium carbide (TiC), the mixing material of metal, 13Cr martensitic steel, silicon (Si), titanium oxide (TiO 2), stainless steel etc.
Wherein, from the viewpoint of adaptation and excellent in workability, superhard alloy, silicon carbide are favourable.
As shape, the size of above-mentioned base material, can suitably select according to the shape of objective optics element, size.
Above-mentioned substrate surface preferably, before forming upper layer described later, carries out the pre-treatments such as mirror ultrafinish, washing.
As the method for the pre-treatments such as above-mentioned mirror ultrafinish, washing, be not particularly limited, can suitably select known method.
In addition, also can, further by contrary sputter, ion exposure etc., above-mentioned base material be cleaned.
< upper layer >
Above-mentioned upper layer contains the diamond-like-carbon containing Si.
-diamond-like-carbon-
Above-mentioned diamond-like-carbon (Diamond-Like Carbon; Below be sometimes referred to as " DLC ".), refer to the material with diamond-like structure and graphite-like structure.
As above-mentioned diamond-like-carbon, be not particularly limited, can suitably select according to object, for example can enumerate hydrogenated amorphous carbon, i-carbon, hard carbon etc.
As the analytical procedure of the above-mentioned diamond-like-carbon of qualification, for example, can enumerate raman spectroscopy.
-content of Si-
As the content of Si in above-mentioned upper layer, the ratio (Si/C) in Si with C, as long as be 0.01~0.05, just be not particularly limited, can suitably select according to object, preferably 0.01~0.047, more preferably 0.01~0.045, particularly preferably 0.01~0.04.The content of Si in above-mentioned upper layer, ratio (Si/C) in Si with C, if be less than 0.01, the low reactivity presenting, the DeGrain of low friction based on adding Si, if be greater than 0.05, significantly worsen for the stripping process productivity based on oxygen ashing of film regeneration.On the other hand, if the content of Si is in above-mentioned particularly preferred scope in above-mentioned upper layer, having the effect of the low friction of low reactivity, is being also favourable aspect inhibition surface oxidation.
In above-mentioned upper layer, the content of Si and C can be tried to achieve by for example XPS (the sub-spectrography of X-ray Photoelectron Spectroscopy:X ray photoelectric) analysis, Auger (Auger) electronic spectrum.
-thickness-
As the thickness of above-mentioned upper layer, as long as for 2nm is above and be less than 50nm, be just not particularly limited, can suitably select according to object, but preferred 2nm~49nm, more preferably 2nm~45nm, further preferably 3nm~40nm, particularly preferably 5nm~35nm.When the thickness of above-mentioned upper layer is less than 2nm, sometimes can not be whole adequate relief film forming, for 50nm is when above, can significantly worsen for the stripping process productivity based on oxygen ashing of film regeneration.On the other hand, if the thickness of above-mentioned upper layer is in above-mentioned particularly preferably scope, can on whole, form film, be favourable from the strong viewpoint of closing force.
The thickness of above-mentioned upper layer for example can be measured by ellipsometry.
-hardness-
As the hardness of above-mentioned upper layer, be not particularly limited, can suitably select according to object, but preferred 5GPa~25GPa, more preferably 5GPa~20GPa, particularly preferably 10GPa~20GPa.If the intensity of above-mentioned upper layer is less than 5GPa, film can wear and tear sometimes, if be greater than 25GPa, and the peeling off weather resistance and can become insufficient of film sometimes.On the other hand, if the intensity of above-mentioned upper layer, in above-mentioned particularly preferred scope, is favourable from wearability, closely sealed weather resistance aspect.
The hardness of above-mentioned upper layer for example can be measured by nano-hardness tester.
-frictional coefficient-
As the frictional coefficient of above-mentioned upper layer, be not particularly limited, can suitably select according to object, but preferably 0.01~0.08 more preferably 0.02~0.07, particularly preferably 0.04~0.06.If the frictional coefficient of above-mentioned upper layer is less than 0.01, the forming face of metal die can not be needed on lens equably sometimes, if be greater than 0.08, sometimes because usage frequency can produce slight crack.On the other hand, if the frictional coefficient of above-mentioned upper layer, in above-mentioned particularly preferred scope, is favourable from the viewpoint stable, that suppress slight crack of lens shape.
The frictional coefficient of above-mentioned upper layer can be measured by for example following methods: use ball disc type (ball on desk) device, make SUS ball processed carry out 10mm translational motion with load 100gf, 1mm/sec, measure.
-surface energy-
The surface energy of above-mentioned upper layer can be by for example calculating from the contact angle of water and methyl iodide.
As the formation method of above-mentioned upper layer, be not particularly limited, can suitably select according to object, for example can enumerate plasma CVD (chemical vapour deposition: chemical vapor deposition), sputter, ion plating, ionic fluid evaporation etc.
In the formation of the above-mentioned upper layer based on plasma CVD, as the gas of supplying with carbon (C), be not particularly limited, can suitably select according to object, for example, can enumerate the alkane such as methane, ethane, propane, the alkene such as ethene, propylene, the alkyl such as pentadiene, divinyl diene, the alkynes such as acetylene, methylacetylene, the aromatic hydrocarbonss such as benzene,toluene,xylene, the naphthenic hydrocarbon such as cyclopropane, hexanaphthene, the ring-type alkene such as cyclopentenes, tetrahydrobenzene etc.Above-mentioned gas can use separately a kind, also can two or more also use.
In addition, in the formation of the upper layer based on above-mentioned plasma CVD, as the gas of supplying with silicon (Si), be not particularly limited, can suitably select according to object, for example, can enumerate silane (SiH 4), tetramethylsilane (TMS:Si (CH 3) 4), silicon tetrachloride (SiCl 4) etc.Above-mentioned gas can use separately a kind, also can two or more also use.
As flow, the pressure of the gas in the formation of the upper layer based on above-mentioned plasma CVD, be not particularly limited, can suitably select according to object.
As the frequency in above-mentioned plasma CVD, be not particularly limited, can suitably select according to object, for example can enumerate high frequency (13.56MHz).
As the output of above-mentioned high frequency, be not particularly limited, can suitably select according to object, but preferred 1.0kW~5.0kW, more preferably 1.5kW~4.0kW, particularly preferably 1.8kW~3.0kW.When the output of above-mentioned high frequency is less than 1.0kW, sometimes because usage frequency and film can be peeled off, if be greater than 5.0kW, metal die becomes high temperature in film forming sometimes, and the hardness of film can reduce.On the other hand, if the output of above-mentioned high frequency in above-mentioned particularly preferred scope, the hardness excellence of upper layer, is preferred from this viewpoint.
Other formation > of <
As above-mentioned other formation, not damaging in the scope of effect of the present invention, be not particularly limited, can suitably select according to object, for example can enumerate middle layer.
-middle layer-
Above-mentioned middle layer forms between above-mentioned base material and upper layer.
By forming above-mentioned middle layer, can prevent the distortion of above-mentioned base material.
As material, the thickness in above-mentioned middle layer, be not particularly limited, can suitably select according to object.
As above-mentioned material, for example, can enumerate TiN, TaN, ZrN, HfN, AlN, TiC, TaC, ZrC, HfC, TiAlN, TiCN, TaCN, ZrCN, HfCN, SiC, SiN, diamond etc.
As the thickness in above-mentioned middle layer, for example, can enumerate 2 μ m etc.
As the formation method in above-mentioned middle layer, be not particularly limited, can suitably select according to object, for example can enumerate sputter, ion plating, CVD etc.
(optical element, and manufacture method)
Optical element of the present invention is manufactured by the manufacture method of optical element of the present invention.
The manufacture method of optical element of the present invention is used die for optical element molding of the present invention, and optical element material is shaped.
-optical element material-
As above-mentioned optical element material, be not particularly limited, can suitably select according to object, for example can enumerate and contain TiO 2glass, contain Nb 2o 5glass, contain WO 3glass, contain Bi 2o 3glass etc.Above-mentioned at least one the glass containing in Ti, W, Nb and Bi, reactive high, but the die for optical element molding of the application of the invention can be made the optical element that defect is few.
-be shaped-
As the method that above-mentioned optical element material is shaped, be not particularly limited, can suitably select according to object, for example can enumerate stamping, injection forming etc.
Above-mentioned stamping in, can be on above-mentioned die for optical element molding the block to above-mentioned optical element material heat, punching press, also can carry out punching press to the block of the optical element material of preheating.
As the temperature of above-mentioned heating, the load of punching press, the time of punching press, be not particularly limited, can suitably select according to optical element material.
-optical element-
As shape, the size of above-mentioned optical element, be not particularly limited, can suitably select according to object.
As above-mentioned optical element, for example, can enumerate lens, prism etc.
Embodiment
Below, embodiments of the invention are described, but the present invention is not subject to any restriction of these embodiment.
(embodiment 1-1)
The manufacture > of < die for optical element molding 1
As the base material of die for optical element molding, use superhard alloy (WC-Co).
The patrix base material of above-mentioned die for optical element molding, has used the base material with flat surfaces.
The counterdie base material of above-mentioned die for optical element molding, has used the surperficial base material with concave shape.
-formation of upper layer-
Upper on the surface of above-mentioned patrix base material and counterdie base material (stamping surface), by the plasma CVD of following condition, form the upper layer of the diamond-like-carbon containing Si of thickness 10nm.The content of Si in above-mentioned upper layer, according to the mode of counting Si/C=0.01 with Si and the ratio (Si/C) of C, with methane (CH 4) gas flow (5sccm~200sccm) and tetramethylsilane (TMS) gas flow (0.1sccm~5sccm) adjust.
The condition of plasma CVD:
High frequency electric source ... 13.56MHz
High frequency output ... 2kW
Gaseous tension ... 4Pa
Methane (CH 4) gas flow ... be adjusted into 5sccm~200sccm.
Tetramethylsilane (TMS) gas flow ... be adjusted into 0.1sccm~5sccm.
The schematic diagram of plasma CVD shown in Fig. 1.In Fig. 1, symbol 1 represents gas, and symbol 2 and 4 represents high-frequency electrode, and symbol 3 represents base material, and symbol 5 represents match box, and symbol 6 represents high frequency electric source.
Result after analyzing according to raman spectroscopy, has formed diamond-like-carbon at above-mentioned upper layer.
The content of confirming Si and C in above-mentioned upper layer by XPS analysis, result is Si/C=0.01.
The frictional coefficient of above-mentioned upper layer is measured in such a way, and result is 0.06.
-measuring method of frictional coefficient-
Use ball disc type apparatus, make SUS ball processed carry out 10mm translational motion with load 100gf, 1mm/sec, measured frictional coefficient.
The surperficial surface energy that calculates above-mentioned upper layer from the contact angle of water and methylene iodide, result is 42mJ/m 2.
(embodiment 1-2)
The manufacture > of < die for optical element molding 2
The base material of die for optical element molding has used the base material identical with embodiment 1-1.
-formation of upper layer-
Upper on the surface of above-mentioned patrix base material and counterdie base material (stamping surface), by the plasma CVD of following condition, form the upper layer of the diamond-like-carbon containing Si of thickness 10nm.The content of Si in above-mentioned upper layer, according to the mode of counting Si/C=0.05 with Si and the ratio (Si/C) of C, with methane (CH 4) gas flow (5sccm~200sccm) and tetramethylsilane (TMS) gas flow (0.1sccm~5sccm) adjust.
The condition of plasma CVD:
High frequency electric source ... 13.56MHz
High frequency output ... 2kW
Gaseous tension ... 4Pa
Methane (CH 4) gas flow ... be adjusted into 5sccm~200sccm.
Tetramethylsilane (TMS) gas flow ... be adjusted into 0.1sccm~5sccm.
The same with embodiment 1-1, to analyze by raman spectroscopy, result is to have formed diamond-like-carbon at above-mentioned upper layer.
For the content of Si and C in above-mentioned upper layer, similarly to confirm by XPS analysis with embodiment 1-1, result is Si/C=0.05.
Similarly measure the frictional coefficient of above-mentioned upper layer with embodiment 1-1, result is 0.05.
With embodiment 1-1 similarly measure above-mentioned upper layer surface can, result is 43mJ/m 2.
(embodiment 1-3)
The manufacture > of < die for optical element molding 3
In embodiment 1-1, about the high frequency output of plasma CVD, the 2kW setting is changed to 1.5kW, in addition, similarly manufacture die for optical element molding 3 with embodiment 1-1.
Similarly analyze by raman spectroscopy with embodiment 1-1, result is to have formed diamond-like-carbon on the upper layer of above-mentioned die for optical element molding 3.
Similarly confirm the content of Si and C in above-mentioned upper layer by XPS analysis with embodiment 1-1, result is Si/C=0.01.
Similarly measure the frictional coefficient of above-mentioned upper layer with embodiment 1-1, result is 0.08.
With embodiment 1-1 similarly measure above-mentioned upper layer surface can, result is 41mJ/m 2.
(embodiment 1-4)
The manufacture > of < die for optical element molding 4
In embodiment 1-2, about the high frequency output of plasma CVD, the 2kW setting is changed to 1.5kW, in addition, similarly manufacture die for optical element molding 4 with embodiment 1-2.
Similarly analyze by raman spectroscopy with embodiment 1-1, result is to have formed diamond-like-carbon on the upper layer of above-mentioned die for optical element molding 4.
Similarly confirm the content of Si and C in above-mentioned upper layer by XPS analysis with embodiment 1-1, result is Si/C=0.05.
Similarly measure the frictional coefficient of above-mentioned upper layer with embodiment 1-1, result is 0.07.
With embodiment 1-1 similarly measure above-mentioned upper layer surface can, result is 42mJ/m 2.
(embodiment 1-5)
The manufacture > of < die for optical element molding 5
In embodiment 1-1, by adjusting film formation time, the thickness of upper layer is changed to 30nm from the 10nm setting, in addition, similarly manufacture die for optical element molding 5 with embodiment 1-1.
With embodiment 1-1 similarly, analyze by raman spectroscopy, result is to have formed diamond-like-carbon on the upper layer of above-mentioned die for optical element molding 5.
Similarly confirm the content of Si and C in above-mentioned upper layer by XPS analysis with embodiment 1-1, result is Si/C=0.01.
Similarly measure the frictional coefficient of above-mentioned upper layer with embodiment 1-1, result is 0.06.
With embodiment 1-1 similarly measure above-mentioned upper layer surface can, result is 42mJ/m 2.
(embodiment 1-6)
The manufacture > of < die for optical element molding 6
The base material of die for optical element molding, uses the base material identical with embodiment 1-1.
-formation of upper layer-
Upper on the surface of above-mentioned patrix base material and counterdie base material (stamping surface), by the plasma CVD of following condition, form the upper layer of the diamond-like-carbon containing Si of thickness 10nm.About the content of Si in above-mentioned upper layer, according to the mode of counting Si/C=0.03 with Si and the ratio (Si/C) of C, with methane (CH 4) gas flow (5sccm~200sccm) and tetramethylsilane (TMS) gas flow (0.1sccm~5sccm) adjust.
The condition of plasma CVD:
High frequency electric source ... 13.56MHz
High frequency output ... 2kW
Gaseous tension ... 4Pa
Methane (CH 4) gas flow ... be adjusted into 5sccm~200sccm.
Tetramethylsilane (TMS) gas flow ... be adjusted into 0.1sccm~5sccm.
With embodiment 1-1 similarly, analyze by raman spectroscopy, result is to have formed diamond-like-carbon at above-mentioned upper layer.
Similarly confirm the content of Si and C in above-mentioned upper layer by XPS analysis with embodiment 1-1, result is Si/C=0.03.
Similarly measure the frictional coefficient of above-mentioned upper layer with embodiment 1-1, result is 0.06.
With embodiment 1-1 similarly measure above-mentioned upper layer surface can, result is 42mJ/m 2.
(embodiment 1-7)
The manufacture > of < die for optical element molding 7
In embodiment 1-1, by adjusting film formation time, the thickness of upper layer is changed to 2nm from the 10nm setting, in addition, similarly manufacture die for optical element molding 7 with embodiment 1-1.
With embodiment 1-1 similarly, analyze by raman spectroscopy, result is to have formed diamond-like-carbon on the upper layer of above-mentioned die for optical element molding 7.
Similarly confirm the content of Si and C in above-mentioned upper layer by XPS analysis with embodiment 1-1, result is Si/C=0.01.
Similarly measure the frictional coefficient of above-mentioned upper layer with embodiment 1-1, result is 0.06.
With embodiment 1-1 similarly measure above-mentioned upper layer surface can, result is 42mJ/m 2.
(embodiment 1-8)
The manufacture > of < die for optical element molding 8
In embodiment 1-1, by adjusting film formation time, the thickness of upper layer is changed to 45nm from set 10nm, in addition, similarly manufacture die for optical element molding 8 with embodiment 1-1.
With embodiment 1-1 similarly, analyze by raman spectroscopy, result is to have formed diamond-like-carbon on the upper layer of above-mentioned die for optical element molding 8.
Similarly obtain the content of Si and C in above-mentioned upper layer by XPS analysis with embodiment 1-1, result is Si/C=0.01.
Similarly measure the frictional coefficient of above-mentioned upper layer with embodiment 1-1, result is 0.06.
With embodiment 1-1 similarly measure above-mentioned upper layer surface can, result is 42mJ/m 2.
(comparative example 1-1)
The manufacture > of < die for optical element molding 9
The base material of die for optical element molding, uses the base material identical with embodiment 1-1.
-formation of upper layer-
Upper on the surface of above-mentioned patrix base material and counterdie base material (stamping surface), by the plasma CVD of following condition, form the upper layer of the diamond-like-carbon that does not contain Si of thickness 10nm.
The condition of plasma CVD:
High frequency electric source ... 13.56MHz
High frequency output ... 2kW
Gaseous tension ... 4Pa
Methane (CH 4) gas flow ... be adjusted into 5sccm~200sccm.
With embodiment 1-1 similarly, analyze by raman spectroscopy, result is to have formed diamond-like-carbon at above-mentioned upper layer.
Similarly measure the frictional coefficient of above-mentioned upper layer with embodiment 1-1, result is 0.12.
With embodiment 1-1 similarly measure above-mentioned upper layer surface can, result is 34mJ/m 2.
(comparative example 1-2)
The manufacture > of < die for optical element molding 10
The base material of die for optical element molding, uses the base material identical with embodiment 1-1.
-formation of upper layer-
Upper on the surface of above-mentioned patrix base material and counterdie base material (stamping surface), by the plasma CVD of following condition, form the upper layer of the diamond-like-carbon containing Si of thickness 10nm.About the content of Si in above-mentioned upper layer, according to the mode of counting Si/C=0.008 with Si and the ratio (Si/C) of C, with methane (CH 4) gas flow (5sccm~200sccm) and tetramethylsilane (TMS) gas flow (0.1sccm~5sccm) adjust.
The condition of plasma CVD:
High frequency electric source ... 13.56MHz
High frequency output ... 2kW
Gaseous tension ... 4Pa
Methane (CH 4) gas flow ... be adjusted into 5sccm~200sccm.
Tetramethylsilane (TMS) gas flow ... be adjusted into 0.1sccm~5sccm.
With embodiment 1-1 similarly, analyze by raman spectroscopy, result is to have formed diamond-like-carbon at above-mentioned upper layer.
Similarly confirm the content of Si and C in above-mentioned upper layer by XPS analysis with embodiment 1-1, result is Si/C=0.008.
Similarly measure the frictional coefficient of above-mentioned upper layer with embodiment 1-1, result is 0.10.
With embodiment 1-1 similarly measure above-mentioned upper layer surface can, result is 36mJ/m 2.
Fig. 2 is the coordinate diagram that the frictional coefficient of the upper layer to die for optical element molding 1~10 compares.From the result of Fig. 2, upper layer is the frictional coefficient containing the upper layer of the die for optical element molding 1~8 of embodiment 1-1~embodiment 1-8 of the diamond-like-carbon of Si, be not compare lower containing the frictional coefficient of the die for optical element molding 9 of comparative example 1-1 of diamond-like-carbon of Si and the upper layer of the die for optical element molding 10 of the poor comparative example 1-2 of Si with upper layer, by containing Si with specified quantitative, can reduce frictional coefficient.
In addition we know, the high frequency output of plasma CVD is the frictional coefficient of the upper layer of embodiment 1-1, the 1-2 of 2kW and the die for optical element molding of 1-5~1-8, and the frictional coefficient of upper layer that is made as the embodiment 1-3 of 1.5kW and the die for optical element molding of embodiment 1-4 than high frequency output is lower.
(embodiment 2-1)
< has used the manufacture-1> of the optical element of die for optical element molding 1
As optical element material, use the glass 1 of the composition of following table 1, use die for optical element molding 1 as die for optical element molding, above-mentioned optical element material is heated to 580 DEG C, carry out stampingly with load 50kgf, carry out the making of the optical lens of the convex form of diameter 4mm, the thickness 1.5mm of 100 times.
Fig. 3, the 4th, stamping diagrammatic illustration figure.Fig. 3 is stamping front explanatory view, explanatory view when Fig. 4 is stamping.In Fig. 3,4, symbol 11 represents base material (patrix), symbol 12 presentation surface layers, and symbol 13 represents optical element material, symbol 14 represents base material (counterdie).
[table 1]
The composition of glass 1
SiO 2 TiO 2 Na 2O K 2O WO 3
43 % by weight 29 % by weight 15 % by weight 8 % by weight 5 % by weight
Fig. 5 is the surperficial MIcrosope image of the die for optical element molding 1 after 100 times of embodiment 2-1 are shaped.From the result of Fig. 5, in the die for optical element molding 1 of upper layer with the diamond-like-carbon that contains Si according to Si/C=0.01, even after being shaped for 100 times, upper layer does not also chap, peels off equivalent damage, with regard to above-mentioned upper layer, and its film hardness excellence, in addition, low with the reactivity of optical element material, with the adaptation excellence of the base material of die for optical element molding, the release property of above-mentioned die for optical element molding 1 and weather resistance are excellent.
In addition, in the shaping of optical lens, do not produce slight crack (cracking) yet.
Therefore, also do not damage even if above-mentioned die for optical element molding 1 exceedes 100 shapings, can be used in the manufacture of optical element.
(embodiment 2-2)
< has used the manufacture-1> of the optical element of die for optical element molding 2
In embodiment 2-1, replace and use die for optical element molding 1, and use die for optical element molding 2, in addition, similarly carry out the manufacture of optical element with embodiment 2-1.
Fig. 6 is the surperficial MIcrosope image of the die for optical element molding 2 after 100 times of embodiment 2-2 are shaped.From the result of Fig. 6, in the die for optical element molding 2 of upper layer with the diamond-like-carbon that contains Si with Si/C=0.05, even after being shaped for 100 times, on upper layer, also do not chap, peel off equivalent damage, with regard to above-mentioned upper layer, its film hardness excellence, in addition, low with the reactivity of optical element material, with the adaptation excellence of the base material of die for optical element molding, the release property of above-mentioned die for optical element molding 2 and weather resistance are excellent.
In addition, in the shaping of optical lens, do not produce slight crack (cracking) yet.
Therefore, also do not damage even if above-mentioned die for optical element molding 2 exceedes 100 shapings, can carry out the manufacture of optical element.
(embodiment 2-3)
< has used the manufacture-1> of the optical element of die for optical element molding 5
In embodiment 2-1, replace the glass 2 that uses glass 1 and use the composition of following table 2, replace and use die for optical element molding 1 and use die for optical element molding 5, replace Heating temperature is made as to 580 DEG C, but changed to 570 DEG C, in addition, similarly carry out the manufacture of optical element with embodiment 2-1.
[table 2]
The composition of glass 2
Nb 2O 5 P 2O 5 Bi 2O 3 WO 3 GeO 2
40 % by weight 22 % by weight 17 % by weight 15 % by weight 6 % by weight
Fig. 7 is the surperficial MIcrosope image of the die for optical element molding 5 after 100 times of embodiment 2-3 are shaped.From the result of Fig. 7, even in the time using reactive high material as optical element material, for die for optical element molding 5, even after being shaped for 100 times, also do not chap, peel off equivalent damage on upper layer, with regard to above-mentioned upper layer, its film hardness excellence is in addition, low with the reactivity of optical element material, with the adaptation excellence of the base material of die for optical element molding, the release property of above-mentioned die for optical element molding 5 and weather resistance are excellent.
In addition, in the shaping of optical lens, do not produce slight crack (cracking) yet.
Therefore, for above-mentioned die for optical element molding 5, use reactive high material as optical element material, also do not damage even if exceed 100 shapings, can carry out the manufacture of optical element.
(embodiment 2-4)
< has used the manufacture-2> of the optical element of die for optical element molding 1
In embodiment 2-1, replace and use glass 1, and use the glass 3 of the composition of following table 3, replace Heating temperature is made as to 580 DEG C and changed to 560 DEG C, in addition, similarly carry out the manufacture of optical element with embodiment 2-1.
[table 3]
The composition of glass 3
SiO 2 BaO Al 2O 3 Na 2O K 2O
48 % by weight 29 % by weight 10 % by weight 8 % by weight 5 % by weight
Fig. 8 is the surperficial MIcrosope image of the die for optical element molding 1 after 100 times of embodiment 2-4 are shaped.From the result of Fig. 8, even in the time using reactive low material as optical element material, for die for optical element molding 1, even after being shaped for 100 times, also do not chap, peel off equivalent damage on upper layer, with regard to above-mentioned upper layer, its film hardness excellence is in addition, low with the reactivity of optical element material, with the adaptation excellence of the base material of die for optical element molding, the release property of above-mentioned die for optical element molding 1 and weather resistance are excellent.
In addition, in the shaping of optical lens, do not produce slight crack (cracking) yet.
Therefore, for above-mentioned die for optical element molding 1, use reactive low material as optical element material, also do not damage even if exceed 100 shapings, can carry out the manufacture of optical element.
(embodiment 2-5)
< has used the manufacture-1> of the optical element of die for optical element molding 3
In embodiment 2-1, replace and use die for optical element molding 1 and use die for optical element molding 3, in addition, similarly carry out the manufacture of optical element with embodiment 2-1.
Fig. 9 is the surperficial MIcrosope image of the die for optical element molding 3 after 100 times of embodiment 2-5 are shaped.From the result of Fig. 9, film forming output is made as in the die for optical element molding 3 of 1.5kW, the peripheral part of the mould after being shaped for 100 times produces check surface slightly, but do not produce slight crack (cracking), with regard to above-mentioned upper layer, its film hardness excellence, in addition, low with the reactivity of optical element material, with the adaptation excellence of the base material of die for optical element molding, the release property of above-mentioned die for optical element molding 3 and weather resistance are excellent.
Therefore,, even if above-mentioned die for optical element molding 3 exceedes 100 shapings, also can carry out the manufacture of optical element.
(embodiment 2-6)
< has used the manufacture-2> of the optical element of die for optical element molding 3
In embodiment 2-3, replace and use die for optical element molding 5 and use die for optical element molding 3, in addition, similarly carry out the manufacture of optical element with embodiment 2-3.
Figure 10 is the surperficial MIcrosope image of the die for optical element molding 3 after 100 times of embodiment 2-6 are shaped.From the result of Figure 10, be made as in the die for optical element molding 3 of 1.5kW in film forming output, after being shaped for 100 times, produce a little check surface at the peripheral part of mould, but do not produce slight crack (cracking), with regard to above-mentioned upper layer, its film hardness excellence, in addition, low with the reactivity of optical element material, with the adaptation excellence of the base material of die for optical element molding, the release property of above-mentioned die for optical element molding 3 and weather resistance are excellent.
Therefore,, even if above-mentioned die for optical element molding 3 exceedes 100 shapings, also can carry out the manufacture of optical element.
(embodiment 2-7)
< has used the manufacture-3> of the optical element of die for optical element molding 3
At embodiment 2-4, replace and use die for optical element molding 1 and use die for optical element molding 3, in addition, similarly carry out the manufacture of optical element with embodiment 2-4.
Figure 11 is the surperficial MIcrosope image of the die for optical element molding 3 after 100 times of embodiment 2-7 are shaped.From the result of Figure 11, be made as in the die for optical element molding 3 of 1.5kW in film forming output, after being shaped for 100 times, produce a little check surface at the peripheral part of mould, but do not produce slight crack (cracking), with regard to above-mentioned upper layer, its film hardness excellence, in addition, low with the reactivity of optical element material, with the adaptation excellence of the base material of die for optical element molding, the release property of above-mentioned die for optical element molding 3 and weather resistance are excellent.
Therefore,, even if above-mentioned die for optical element molding 3 exceedes 100 shapings, also can carry out the manufacture of optical element.
(embodiment 2-8)
< has used the manufacture-1> of the optical element of die for optical element molding 4
In embodiment 2-1, replace and use die for optical element molding 1 and use die for optical element molding 4, in addition, similarly carry out the manufacture of optical element with embodiment 2-1.
Figure 12 is the surperficial MIcrosope image of the die for optical element molding 4 after 100 times of embodiment 2-8 are shaped.From the result of Figure 12, be made as in the die for optical element molding 4 of 1.5kW in film forming output, after being shaped for 100 times, produce a little check surface at the peripheral part of mould, but do not produce slight crack (cracking), with regard to above-mentioned upper layer, film hardness excellence, in addition, low with the reactivity of optical element material, with the adaptation excellence of the base material of die for optical element molding, the release property of above-mentioned die for optical element molding 4 and weather resistance are excellent.
Therefore,, even if above-mentioned die for optical element molding 4 exceedes 100 shapings, also can carry out the manufacture of optical element.
(embodiment 2-9)
< has used the manufacture-1> of the optical element of die for optical element molding 6
In embodiment 2-1, replace and use die for optical element molding 1 and use die for optical element molding 6, in addition, similarly carry out the manufacture of optical element with embodiment 2-1.
Figure 13 is the surperficial MIcrosope image of the die for optical element molding 6 after 100 times of embodiment 2-9 are shaped.From the result of Figure 13, in the die for optical element molding 6 of upper layer with the diamond-like-carbon that contains Si with Si/C=0.03, even after being shaped for 100 times, on upper layer, also do not chap, peel off equivalent damage, with regard to above-mentioned upper layer, its film hardness excellence, in addition, low with the reactivity of optical element material, with the adaptation excellence of the base material of die for optical element molding, the release property of above-mentioned die for optical element molding 6 and weather resistance are excellent.
In addition, in the shaping of optical lens, do not produce slight crack (cracking) yet.
Therefore, also do not damage even if above-mentioned die for optical element molding 6 exceedes 100 shapings, can carry out the manufacture of optical element.
(embodiment 2-10)
< has used the manufacture-1> of the optical element of die for optical element molding 7
In embodiment 2-1, replace and use die for optical element molding 1, and use die for optical element molding 7, in addition, similarly carry out the manufacture of optical element with embodiment 2-1.
Figure 14 is the surperficial MIcrosope image of the die for optical element molding 7 after 100 times of embodiment 2-10 are shaped.From the result of Figure 14, for the thickness of upper layer with the diamond-like-carbon that contains Si taking Si/C=0.01 for the die for optical element molding 7 of 2nm, even after being shaped for 100 times, on upper layer, also do not chap, peel off equivalent damage, with regard to above-mentioned upper layer, its film hardness excellence, in addition, low with the reactivity of optical element material, with the adaptation excellence of the base material of die for optical element molding, the release property of above-mentioned die for optical element molding 7 and weather resistance are excellent.
In addition, in the shaping of optical lens, do not produce slight crack (cracking) yet.
Therefore, also do not damage even if above-mentioned die for optical element molding 7 exceedes 100 shapings, can carry out the manufacture of optical element.
(embodiment 2-11)
< has used the manufacture-1> of the optical element of die for optical element molding 8
In embodiment 2-1, replace and use die for optical element molding 1 and use die for optical element molding 8, in addition, similarly carry out the manufacture of optical element with embodiment 2-1.
Figure 15 is the surperficial MIcrosope image of the die for optical element molding 8 after 100 times of embodiment 2-11 are shaped.From the result of Figure 15, for the thickness of the upper layer of the diamond-like-carbon that contains Si taking Si/C=0.01 for the die for optical element molding 8 of 45nm, even after being shaped for 100 times, on upper layer, also do not chap, peel off equivalent damage, with regard to above-mentioned upper layer, its film hardness excellence, in addition, low with the reactivity of optical element material, with the adaptation excellence of the base material of die for optical element molding, the release property of above-mentioned die for optical element molding 8 and weather resistance are excellent.
In addition, in the shaping of optical lens, do not produce slight crack (cracking) yet.
Therefore, also do not damage even if above-mentioned die for optical element molding 8 exceedes 100 shapings, can carry out the manufacture of optical element.
(comparative example 2-1)
< has used the manufacture-1> of the optical element of die for optical element molding 9
In embodiment 2-1, replace and use die for optical element molding 1 and use die for optical element molding 9, in addition, similarly carry out the manufacture of optical element with embodiment 2-1.
Figure 16 is the surperficial MIcrosope image of the die for optical element molding 9 after 100 times of comparative example 2-1 are shaped.From the result of Figure 16, in the die for optical element molding 9 having not containing the upper layer of the diamond-like-carbon of Si, upper layer produces be full of cracks, peels off.In addition, the be full of cracks of upper layer or peel off 60 times be shaped after will produce.
In addition, in the shaping of optical lens, at 30 rear slight cracks (cracking) that produce that are shaped.
(comparative example 2-2)
< has used the manufacture-2> of the optical element of die for optical element molding 9
In embodiment 2-3, replace and use die for optical element molding 5 and use die for optical element molding 9, in addition, embodiment 2-3 similarly carries out the manufacture of optical element.
Figure 17 is the surperficial MIcrosope image of the die for optical element molding 9 after 100 times of comparative example 2-2 are shaped.From the result of Figure 17, in the die for optical element molding 9 having not containing the upper layer of the diamond-like-carbon of Si, upper layer produces be full of cracks, peels off.In addition, the be full of cracks of upper layer or peel off 40 times be shaped after produce.
In addition, in the shaping of optical lens, at 20 rear slight cracks (cracking) that produce that are shaped.
(comparative example 2-3)
< has used the manufacture-3> of the optical element of die for optical element molding 9
In embodiment 2-4, replace and use die for optical element molding 1 and use die for optical element molding 9, in addition, embodiment 2-4 similarly carries out the manufacture of optical element.
Figure 18 is the surperficial MIcrosope image of the die for optical element molding 9 after 100 times of comparative example 2-3 are shaped.From the result of Figure 18, in the die for optical element molding 9 having not containing the upper layer of the diamond-like-carbon of Si, upper layer produces be full of cracks, peels off.In addition, the be full of cracks of upper layer or peel off 80 times be shaped after produce.
In addition, in the shaping of optical lens, at 40 rear slight cracks (cracking) that produce that are shaped.
(comparative example 2-4)
< has used the manufacture-1> of the optical element of die for optical element molding 10
In embodiment 2-1, replace and use die for optical element molding 1 and use die for optical element molding 10, in addition, similarly carry out the manufacture of optical element with embodiment 2-1.
Figure 19 is the surperficial MIcrosope image of the die for optical element molding 10 after 100 times of comparative example 2-4 are shaped.From the result of Figure 19, in the die for optical element molding 10 of the upper layer of the diamond-like-carbon that is Si/C=0.008 at the content with Si, upper layer produces be full of cracks, peels off.In addition, the be full of cracks of upper layer or peel off 85 times be shaped after produce.
In addition, in the shaping of optical lens, at 50 rear slight cracks (cracking) that produce that are shaped.
Gather above-described embodiment and comparative example, shown in table 4.
[table 4]
In " peeling off (mould) " hurdle of table 4, " while shaping for 100 times, mould does not damage, and exceedes 100 times and also can be shaped in " ◎ " expression.", "○" represents " while shaping for 100 times, produce a little check surface at mould peripheral part, but exceeding 100 times also can be shaped.", "×" represents " can not carry out the shaping of 100 times.", the number of times when numeral upper layer in bracket produces be full of cracks or peels off.In addition, " 100 ↑ " expression " while shaping for 100 times, not have the generation upper layer that can not be shaped be full of cracks, peel off.”。
In addition, in " slight crack " hurdle, "○" represents " while shaping for 100 times, not produce cracking.", "×" represents " while shaping for 100 times, to have produced cracking.", the number of times when numeral in bracket produces cracking.In addition " 100 ↑ " expression, " does not produce cracking " while shaping for 100 times.
As shown in Table 4, the Si content of upper layer is counted the surface energy of the die for optical element molding 1~8 of Si/C=0.01~0.05 with Si and the ratio (Si/C) of C, specific surface layer can be not larger containing the surface of the die for optical element molding 9 of Si and the die for optical element molding 10 of Si/C=0.008, the surface of the upper layer of die for optical element molding 1~8, higher than the surperficial wetting ability of the upper layer of die for optical element molding 9 and 10.In addition, be output as 2kW and carry out the die for optical element molding 1 of film forming with film forming, can be higher than the surface of carrying out the die for optical element molding 3 of film forming with 1.5kW, known equally, die for optical element molding 2 can be higher than the surface of die for optical element molding 4.
In addition we know, in upper layer contains containing the diamond-like-carbon of Si and above-mentioned upper layer the content of Si taking Si and the ratio (Si/C) of C count 0.01~0.05 and the thickness of above-mentioned upper layer more than 2nm and be less than in the die for optical element molding 1~8 of 50nm, the adaptation excellence of the base material of die for optical element molding and upper layer, and release property and weather resistance are excellent.
Can think that this is because by reducing the thickness of upper layer, can improve the adaptation of base material and upper layer, and then the oxidation of Si inhibition C, can prevent that C from, because of the oxidation disappearance of gasifying, can improve release property and weather resistance thus.
Die for optical element molding of the present invention, low with the reactivity of optical element material, can reduce the frictional coefficient of the upper layer of optical element material and die for optical element molding, the adaptation excellence of the base material of die for optical element molding and upper layer, therefore release property and excellent in te pins of durability, so containing reactive high TiO 2, Nb 2o 5, WO 3, Bi 2o 3deng the situation of shaping of optical element material, thin lens under also can be suitable for.

Claims (5)

1. a die for optical element molding, is characterized in that,
There is base material and upper layer,
Described upper layer contains the diamond-like-carbon containing Si,
In described upper layer, the content of Si is that Si/C counts 0.01~0.05 with Si with the ratio of C,
The thickness of described upper layer is more than 2nm and is less than 50nm.
2. die for optical element molding according to claim 1, wherein, the frictional coefficient of upper layer is 0.01~0.08.
3. the manufacture method of an optical element, it is characterized in that, use following die for optical element molding that optical element material is shaped, described die for optical element molding has base material and upper layer, described upper layer contains the diamond-like-carbon containing Si, in described upper layer, the content of Si is that Si/C counts 0.01~0.05 with Si with the ratio of C, and the thickness of described upper layer is more than 2nm and is less than 50nm.
4. the manufacture method of optical element according to claim 3, wherein, optical element material contains at least one in Ti, W, Nb and Bi.
5. an optical element, it is characterized in that, its be by make with following die for optical element molding optical element material be shaped optical element manufacture method manufacture, described die for optical element molding has base material and upper layer, described upper layer contains the diamond-like-carbon containing Si, in described upper layer, the content of Si is that Si/C counts 0.01~0.05 with Si with the ratio of C, and the thickness of described upper layer is more than 2nm and is less than 50nm.
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