CN102185109A - Preparation method of organic multilayer film - Google Patents
Preparation method of organic multilayer film Download PDFInfo
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- CN102185109A CN102185109A CN 201110084673 CN201110084673A CN102185109A CN 102185109 A CN102185109 A CN 102185109A CN 201110084673 CN201110084673 CN 201110084673 CN 201110084673 A CN201110084673 A CN 201110084673A CN 102185109 A CN102185109 A CN 102185109A
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Abstract
The invention discloses a preparation method of an organic multilayer film, and belongs to the technical field of organic multilayer film preparation. The preparation method comprises the following steps of: depositing different organic substance films on metal electrodes of two substrates; aligning and contacting the organic substance film layers of the two substrates, and heating at least one of the substrates; and when the temperature of at least one of the substrates enters a preset temperature range, applying opposite pressures to the two substrates. In the preparation method, the low-temperature growth of the organic film is performed after the manufacturing process of the metal electrodes is finished, the adverse effect, caused by high-energy metal atoms or ions, on the performance of an organic molecular film in the manufacturing process of the metal electrodes is overcome, and the performance of an organic device is improved to the utmost extent in device manufacturing.
Description
Technical field
The present invention relates to be used for the organic multilayer film preparing technology field that organic assembly is made, particularly a kind of preparation method who takes the temperature control pressing mode to carry out the organic multilayer film.
Background technology
The preparation method of organic film and element manufacturing technology are extremely important in the organic electroluminescence device, device performance is had a significant impact, the different components manufacturing technology directly affects the operating efficiency of device, and different preparation methods directly has influence on the device preparation cost in the industrialization.According to the difference of material Tu, the method for organic molecule vacuum evaporation commonly used prepares film, and the method for macromolecule material Tu spin coating commonly used prepares film.Along with organic electroluminescence device preparation technology's development, other preparation technology has appearred in succession, as: organic vapor jet printing, organic vapor phase deposition, silk screen printing and inkjet printing etc.
Consider many-sided factors such as utilance, preparation method's the limitation of technology difficulty, film performance, material and production cost, the above-mentioned organic film growing method part that all comes with some shortcomings.Particularly in device fabrication processes, the evaporation that needs to finish metal electrode (male or female) after finishing the organic film growth is made, and the making of metal electrode is generally taked to evaporate or the method for sputter is carried out; In the process of organic film deposition, high-energy metals atom or ion can bring to a certain degree damage to organic molecular structure, have influence on the organic material luminous efficiency and the device performance that the most directly contact with metal electrode.Therefore, how to realize that it is a new OLED(Organic Light Emitting Diode that is worth exploration that low damage of organic assembly or undamaged technology are made, Organic Light-Emitting Diode) the element manufacturing technical problem.
Summary of the invention
In order to solve evaporation or the high-energy metals atom of sputter or the adverse effect of ion pair organic molecular film performance in the organic assembly metal electrode manufacture craft, the invention provides a kind of preparation method of organic multilayer film, described method comprises:
The different organic thin film of deposition on the metal electrode of two substrates;
The organic thin film layer of two substrates is aimed at contact, and at least one substrate heating;
After treating that at least one substrate temperature enters preset temperature range, two substrates are applied the opposite pressure of direction.
The preparation method of organic multilayer film provided by the invention has changed the technology of existing organic assembly and has made flow process, formerly finish the low-temperature epitaxy that carries out organic film after the manufacture craft of metal electrode, overcome the adverse effect of high-energy metals atom in the existing metal electrode manufacture craft or ion pair organic molecular film performance, aspect element manufacturing, improved the performance of organic assembly to greatest extent.
Description of drawings
Two substrate structure schematic diagrames having finished the metal electrode making that Fig. 1 provides for the embodiment of the invention;
The substrate structure figure that finishes two kinds of organic film growths respectively that Fig. 2 provides for the embodiment of the invention;
The organic film pressing process schematic diagram that Fig. 3 provides for the embodiment of the invention.
Embodiment
In order to understand the present invention in depth, the present invention is described in detail below in conjunction with drawings and the specific embodiments.
The present invention proposes a kind of preparation method of organic multilayer film, this method is the growth of carrying out organic film on the substrate of metal electrode finishing, takes the temperature control pressing mode to carry out the joint of organic multilayer film, thereby finishes the preparation of organic assembly.Temperature control can be taked monocrepid temperature control or two kinds of schemes of double-basis sheet temperature control, is that example is set forth technical scheme of the present invention with these two kinds of temperature control scheme below.
Embodiment 1
The present invention proposes a kind of preparation method of organic multilayer film, comprise the steps:
Step 101: on two substrates, adopt evaporation or sputter mode to prepare metal electrode;
As shown in Figure 1, adopt evaporation or sputter mode to prepare the metal positive electrode or the metal negative electrode of substrate, its technological process is as follows: at first adopt evaporation or sputtering method to prepare tin indium oxide (ITO) metal positive electrode on a substrate, thickness is 3500 dusts, in finishing the ITO evaporation process, make the metal registration mark of positive electrode; Then, also adopt evaporation or sputtering method to prepare aluminium (Al) metal negative electrode on another substrate, thickness is 4000 dusts, in finishing the aluminum evaporation process, makes the metal registration mark of negative electrode;
Step 102: use vacuum deposition method on the metal electrode of two substrates, to deposit different organic thin films;
As shown in Figure 2, sedimentary organic material film on metal electrode also is referred to as the organic thin film of growing; In the present embodiment, adopt vacuum deposition method Alq (the 8 alkyl quinoline aluminum) material of growing on aluminium (Al) metal negative electrode, thickness is the 3000-5000 dust, forms organic thin film 1; Adopt the vacuum deposition method TPD(fragrance diamine of on tin indium oxide metal positive electrode, grow) material, thickness is the 3000-5000 dust, formation organic thin film 2; In the present embodiment, can also use method sedimentary organic material films such as spin-coating method, organic vapor jet printing, organic vapor phase deposition, silk screen printing or inkjet printing;
Step 103: contact is aimed on two substrate organic thin film aspect opposites;
In the present embodiment, before with aluminum metal negative electrode and the pressing of tin indium oxide metal positive electrode, the organic thin film of deposition on it need be aimed at, just can finish the fluid-tight engagement of organic film; In the practical application, can take microelectronic technique to make registration mark and aim at, concrete technology is as follows: in finishing the ITO evaporation process, make the metal registration mark of positive electrode; In finishing the aluminum evaporation process, make the metal registration mark of negative electrode; Registration mark on the positive electrode is aimed at the registration mark on the negative electrode;
Step 104: with the heating of two substrates, treat that two substrate temperatures enter preset temperature range after, two substrates are applied the opposite pressure of direction;
Preset temperature range can be the organic thin film glass temperature range; In the present embodiment, tin indium oxide metal positive electrode substrate is heated to temperature T 2, temperature T 2 is positioned within glass temperature range 160-260 ℃ of TPD material; Aluminum metal negative electrode substrate is heated to temperature T 1, and temperature T 1 is positioned within glass temperature range 120-220 ℃ of Alq material; Afterwards, two substrates are applied the opposite pressure of direction, force value is 0.01MPa-100Mpa, and pressure duration is 1 second-30 minutes, makes two-layer organic thin film Alq and TPD fluid-tight engagement, as shown in Figure 3; In the practical application, the joint of two organic films need be finished under certain condition, the solid long-chain began fracture and certain flexibility occurs when organic material was near glass transition temperature point and a little more than glass transition temperature generally speaking, relatively be fit to carry out pressing, therefore need carry out precise dose control (T1, T2) substrate.
Embodiment 2
The difference of present embodiment and embodiment 1 is: embodiment 1 is to two substrate heating, and present embodiment is only to a substrate heating.In the present embodiment, the preparation of substrate metal positive electrode or metal negative electrode, the deposition of metal positive electrode or metal negative electrode organic thin film, and the substrate organic thin film aims at contact, all identical with step 101-103 among the embodiment 1, present embodiment repeats no more.Present embodiment and embodiment 1 difference are as follows:
Step 104 ': with the heating of substrate, treat that this substrate temperature enters preset temperature range after, two substrates are applied the opposite pressure of direction;
Preset temperature range can be the organic thin film glass temperature range; In the present embodiment, to tin indium oxide metal positive electrode substrate heating, only aluminum metal negative electrode substrate is not heated to temperature T 1, temperature T 1 is positioned within glass temperature range 120-220 ℃ of Alq material; Afterwards, two substrates are applied the opposite pressure of direction, force value is 0.01MPa-100Mpa, and pressure duration is 1 second-30 minutes, makes two-layer organic thin film Alq and TPD fluid-tight engagement.
In actual applications, embodiment 1 and 2 described substrates can but to be not limited to be glass or flexiplast.For realize organic thin film evenly with the contacting of plane, to reach film combination interface preferably, can take hydraulic pressure or pneumatic conveying mode to exert pressure; The mode of exerting pressure is not limited only to single force value, can also take two sections staged pattern of pressure, for example, and the 0.06Mpa time remaining 20 seconds of exerting pressure earlier, the 1Mpa time remaining 2 minutes of exerting pressure again; The zero-time of exerting pressure is not limited to the initial moment that the organic thin film material reaches vitrification point point.
The preparation method of organic multilayer film provided by the invention can be used for the making of organic assembly, the technology that has changed existing organic assembly is made flow process, formerly finish the low-temperature epitaxy that carries out organic film after the manufacture craft of metal electrode, overcome the weak point of existing organic assembly technological process, such as finishing the technology that organic film growth back makes metal electrode earlier, evaporate or the high-energy metals atom of sputter or the adverse effect of ion pair organic molecular film performance, aspect element manufacturing, improved the performance of organic assembly to greatest extent.
Above-described embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is the specific embodiment of the present invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1. the preparation method of an organic multilayer film is characterized in that, described method comprises:
The different organic thin film of deposition on the metal electrode of two substrates;
The organic thin film layer of two substrates is aimed at contact, and at least one substrate heating;
After treating that at least one substrate temperature enters preset temperature range, two substrates are applied the opposite pressure of direction.
2. the preparation method of organic multilayer film as claimed in claim 1, it is characterized in that the deposition process of the described organic thin film that deposition is different on the metal electrode of two substrates is: vacuum vapour deposition, spin-coating method, organic vapor jet printing, organic vapor phase deposition, silk screen printing or inkjet printing.
3. the preparation method of organic multilayer film as claimed in claim 1 is characterized in that, it is to adopt microelectronic technique to make registration mark to aim at that described organic thin film layer with two substrates is aimed at.
4. the preparation method of organic multilayer film as claimed in claim 1 is characterized in that, described preset temperature range is the organic film glass temperature range, and the organic film glass temperature range difference of two substrates.
5. the preparation method of organic multilayer film as claimed in claim 1 is characterized in that, described mode of exerting pressure is hydraulic pressure or pneumatic conveying mode.
6. the preparation method of organic multilayer film as claimed in claim 5 is characterized in that, described force value of exerting pressure is 0.01MPa-100Mpa, and the described time of exerting pressure is 1 second-30 minutes.
7. the preparation method of organic multilayer film as claimed in claim 1, it is characterized in that, describedly before the step of the different organic thin film of deposition on the metal electrode of two substrates, also comprise: on two substrates, adopt evaporation or sputter mode to prepare metal electrode.
8. as the preparation method of arbitrary described organic multilayer film among the claim 1-7, it is characterized in that described substrate is that glass or flexibility are moulded plate.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103303016A (en) * | 2012-03-13 | 2013-09-18 | 环球展览公司 | Method of depositing organic material by using nozzle and device using the method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030071293A1 (en) * | 2001-10-15 | 2003-04-17 | Miharu Otani | Semiconductor memory device and manufacturing process for the same |
| CN101908533A (en) * | 2009-06-05 | 2010-12-08 | 清华大学 | Bilaterally displayed OLED (Organic Light-emitting Device) and preparation method thereof |
| US20110244141A1 (en) * | 2010-03-31 | 2011-10-06 | General Electric Company | Method of processing multilayer film |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030071293A1 (en) * | 2001-10-15 | 2003-04-17 | Miharu Otani | Semiconductor memory device and manufacturing process for the same |
| CN101908533A (en) * | 2009-06-05 | 2010-12-08 | 清华大学 | Bilaterally displayed OLED (Organic Light-emitting Device) and preparation method thereof |
| US20110244141A1 (en) * | 2010-03-31 | 2011-10-06 | General Electric Company | Method of processing multilayer film |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103303016A (en) * | 2012-03-13 | 2013-09-18 | 环球展览公司 | Method of depositing organic material by using nozzle and device using the method |
| CN103303016B (en) * | 2012-03-13 | 2017-01-18 | 环球展览公司 | Method of depositing organic material by using nozzle and device using the method |
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Application publication date: 20110914 |