CN102185091A - Light-emitting diode device and manufacturing method thereof - Google Patents
Light-emitting diode device and manufacturing method thereof Download PDFInfo
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- CN102185091A CN102185091A CN2011100764685A CN201110076468A CN102185091A CN 102185091 A CN102185091 A CN 102185091A CN 2011100764685 A CN2011100764685 A CN 2011100764685A CN 201110076468 A CN201110076468 A CN 201110076468A CN 102185091 A CN102185091 A CN 102185091A
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- led chip
- utmost point
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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Abstract
The invention discloses a light-emitting diode device (LED) device, which comprises at least one LED chip and a circuit board. The LED chip has an N pole and a P pole, and an electrode layer is covered on the surface of the N pole and the surface of the P pole, wherein the thicknesses of the electrode layers on the surfaces of the N pole and the P pole are the same. An insulating layer is covered on the upper surface of the circuit board; a conducting layer is covered on the upper surface of the insulating layer; the upper surface of the area corresponding to the N pole of the LED chip of the conducting layer is provided with a metal layer; and the thickness of the metal layer is equal to the height difference between the N pole and the P pole of the LED chip. The LED chip is inversely arranged on the circuit board, wherein the P pole of the LED chip is connected with the conducting layer through the electrode layer, and the N pole of the LED chip is connected with the conducting layer through the electrode layer and the metal layer. Compared with the prior art, the upper surface of the area corresponding to the N pole of the LED chip on the circuit board in the luminescent device is provided with the metal layer, so that the design and the manufacturing process of the LED chip are simplified, and the performance of the LED chip is further improved.
Description
Technical field
The invention belongs to the manufacturing field of luminescent device, relate to a kind of LED device and manufacture method thereof, relate in particular to a kind of LED device and manufacture method thereof of the COB of employing chip encapsulation technology.
Background technology
Light-emitting diode (LED) is a kind of energy-conservation and lighting source environmental protection characteristic of having, and integrates high light efficiency, low energy consumption, the low premium properties such as cost of safeguarding.Estimate that in theory the luminous efficiency of LED illuminating lamp can meet or exceed 10 times of incandescent lamp, 2 times of fluorescent lamp.At present LED be widely used in that mobile phone is backlight, LCD display is backlight, construction landscape, indication, special lighting etc., and expand to fields such as general lighting, automotive lightings day by day.Along with the raising of LED illuminating product power and luminous efficiency, the selection of structure and material will be to performance and the useful life of LED having decisive influence.Wherein a kind of structure of LED is in the flip chip bonding mode led chip flip chip bonding to be connected on the substrate, and its advantage is that the more traditional formal dress chip structure of its reliability and heat-sinking capability is better.
See also Fig. 1, it is the chip unit structure of existing a kind of traditional flip welding LED.This chip unit comprises a led chip 10 and a circuit board 20.This led chip 10 comprises a N utmost point and a P utmost point, at surface coverage one electrode layer 12 of this N utmost point and the P utmost point, and this electrode layer 12 surface coverage one metal pad 14.These circuit board 20 upper surfaces are provided with a conductive layer 22.The metal pad 14 of this led chip 10 is connected with conductive layer 22 on this circuit board 20 by salient point soldered ball 46.Because the depth ratio of the electrode ICP etching N utmost point is bigger, therefore has a height fall between the N utmost point of this led chip 10 and the P utmost point, for make between upside-down mounting welding back led chip 10 and the circuit board 20 be connected more firm, the thickness of the metal pad 14 that needs increase N extremely goes up, the metal pad 14 that the N utmost point and P are extremely gone up is in the same plane.But the technology of the thickness of increase metal pad 14 is comparatively complicated on led chip 10, and also may the performance of led chip 10 be had a negative impact in manufacture process.
See also Fig. 2, it is that publication number is the generalized section of the disclosed a kind of led chip flip chip bonding packaging structure of U.S.'s application for a patent for invention of US7321161B2.This encapsulating structure comprises a led chip 10, a substrate 60, a support 30 and casting glue 40.These led chip 10 upside-down mountings are on this substrate 60, and this substrate 60 is arranged on the support 30, and electrode on this substrate 60 62 is connected with stent electrode 32 on the support 30 by gold thread 50.This casting glue 18 Chip Packaging in support 30.Heat sink 36 are arranged on support 30 bottom center.Entire bracket also needs to link to each other to make with aluminium base or PCB circuit board to become lighting or luminescent device.This encapsulating structure, chip will can link to each other with heat sink or circuit board by support, and the heat that chip sends just is transmitted on heat sink or the circuit board through support, and heat dissipation channel is long.In addition, the connection of support and gold thread takies certain packaging cost.The thermal stress of casting glue makes the gold thread distortion easily during encapsulation, even fractures, and reduces yield of products and reliability thereby make.Because each chip all needs to be encapsulated on the support, realize that the integrated luminescent device of multicore sheet needs secondary to be assembled on the circuit board, operation is loaded down with trivial details.
Summary of the invention
The objective of the invention is to overcome shortcoming of the prior art with not enough, the lumination of light emitting diode device that a kind of technology is simple, can dispel the heat rapidly is provided.
Simultaneously, the present invention also provides the manufacture method of described LED device.
The present invention is achieved by the following technical solutions: a kind of LED device is characterized in that: comprise an at least one led chip and a circuit board.This led chip has a N utmost point and a P utmost point, and at surface coverage one electrode layer of this N utmost point and the P utmost point, wherein, this N utmost point and the P extremely thickness of the electrode layer on surface are identical.The upper surface of this circuit board covers an insulating barrier, the upper surface of this insulating barrier covers a conductive layer, at this conductive layer the upper surface in the zone of the N utmost point that should led chip is provided with a metal level, this metal layer thickness is the N utmost point of this led chip and the difference in height between the P utmost point.This led chip upside-down mounting be arranged on this circuit board on, wherein, the P utmost point of this led chip is connected with conductive layer by electrode layer, the N utmost point of this led chip is connected with conductive layer with metal level by electrode layer.
A kind of manufacture method of luminescent device is characterized in that: comprise the steps
Step S1: make led chip, growth has the extension disk of nitride multilayer gallium on Sapphire Substrate, sequence of process steps through photoetching, etching, layer metal deposition and passivation layer protection forms the P utmost point and the N utmost point on led chip, form electrode layer on the surface of the P utmost point and the N utmost point then;
Step S2: make circuit board, cover an insulating barrier at the upper surface of circuit board, the upper surface at this insulating barrier covers a conductive layer then, then forms a metal level on the surface of this conductive layer;
Step S3: on this circuit board, and the extremely corresponding electrode layer of the P that makes this led chip is connected with conductive layer on this circuit board with the led chip upside-down mounting, and the N that makes this led chip extremely electrode layer of correspondence is connected with metal level on this circuit board.
Further, this step S2 also comprises step: form a dielectric layer on the surface of this conductive layer; Before or after this step S3, also comprise step: a reflector is arranged on the dielectric layer upper surface of this circuit board, and makes this led chip be positioned at the receiving space of this reflector.
Further, this step S1 also comprises step: form metal pad in this electrode layer surface; The step of this step S3 replaces with: with the led chip upside-down mounting on this circuit board, and the extremely corresponding electrode layer of the P that makes this led chip is connected with metal pad on this circuit board, and the N that makes this led chip extremely electrode layer of correspondence is connected with metal pad on this circuit board.
With respect to prior art, upper surface to the zone of the N utmost point that should led chip on the circuit board in the luminescent device of the present invention is provided with a metal level, need not especially at the thickness of the N of this led chip utmost point corresponding position thickening electrode layer or metal pad with the electrode layer of yielding to the P utmost point and the thickness of metal pad, simplify the design and the manufacture craft of led chip, further improved the performance of led chip.In addition, the P utmost point that the heat that led chip in this luminescent device produces can be by LED and the N utmost point and electrode layer thereof and metal pad are transmitted on the conductive layer of circuit board, compare with the conventional package structure, need not to use support, shorten heat dissipation channel, strengthened heat-sinking capability, improved device reliability.
In order to understand the present invention more clearly, set forth the specific embodiment of the present invention below with reference to description of drawings.
Description of drawings
Fig. 1 is the chip unit structure of existing a kind of traditional flip welding LED.
Fig. 2 is that publication number is the generalized section of the disclosed a kind of led chip flip chip bonding packaging structure of U.S.'s application for a patent for invention of US7321161B2.
Fig. 3 is the lumination of light emitting diode device profile structural representation of the embodiment of the invention 1.
Fig. 4 is the vertical view of the lumination of light emitting diode device of the embodiment of the invention 2.
Embodiment
Embodiment 1:
See also Fig. 3, it is the lumination of light emitting diode device profile structural representation of the embodiment of the invention 1.This luminescent device comprises a led chip 100, a circuit board 200, a reflector 300 and a package lens 400.This reflector 300 is arranged on the upper surface of circuit board 200, this led chip 100 is arranged in the receiving space of reflector 300 and upside-down mounting is arranged on the upper surface of this circuit board 200, and the top that this package lens 400 is arranged on this reflector 300 is sealed in this led chip 100 in this receiving space.
Particularly, this led chip 100 has a N utmost point and a P utmost point, at surface coverage one electrode layer 102 of this N utmost point and the P utmost point, and surface coverage one metal pad 104 of this electrode layer 102.Wherein, this N utmost point and P extremely the surface electrode layer 102 and the thickness basically identical of metal pad 104.
The upper surface of this circuit board 200 covers an insulating barrier 202.Upper surface at this insulating barrier 202 covers a conductive layer 204, and this conductive layer 204 is in order to be electrically connected with the N utmost point and the P utmost point of this led chip 100.Therefore, the upper surface in zone of the N utmost point that should led chip 100 204 pairs of this conductive layers is provided with a metal level 206, and the thickness of this metal level 206 is the N utmost point of this led chip 100 and the difference in height between the P utmost point.These led chip 100 upside-down mountings be arranged on this circuit board 200 on, wherein, the P utmost point of this led chip 100 is connected with conductive layer 204 with metal pad 104 by electrode layer 102, and the N utmost point of this led chip 100 is connected with conductive layer 204 with metal pad 104 and metal level 206 by electrode layer 102.In addition, the upper surface of conductive layer 204 also is provided with a dielectric layer 208, and this reflector 300 is arranged on this dielectric layer 208.
The surface of the receiving space of this reflector 300 is provided with the reflector layer 302 of a high reflectance, the material of this reflector layer specifically can be a silver, also can be the two Phthalate macromolecule reflectorized materials such as (PET) of aluminium, nickel highly reflective metal, alloy or polyethylene.
These circuit board 200 shapes can be rectangle, circle, polygonal figures.
The material of conductive layer 204 can be electric conducting materials such as metals such as copper, aluminium, nickel or organic polymer on this circuit board 200.
The material of the metal level 206 of these circuit board 200 upper surfaces can be metal or alloy such as tin, gold, silver, nickel.
The electrode layer 102 on this led chip 100 and the material of metal pad 104 can be single metal material such as lead, tin, gold, silver, nickel or copper or multilayer material or the alloy be made up of above-mentioned single metal material.
Below describe the concrete manufacture method of the luminescent device of the embodiment of the invention 1 in detail:
Step S1: make led chip 100.Particularly; growth has the extension disk of nitride multilayer gallium on Sapphire Substrate; through sequence of process steps such as photoetching, etching, layer metal deposition and passivation layer protections, on led chip, form the P utmost point and the N utmost point, form electrode layer 102 and metal pad 104 in regular turn on the surface of the P utmost point and the N utmost point then.
Step S2: make circuit board 200.Upper surface at circuit board 200 covers an insulating barrier 202.Upper surface at this insulating barrier 202 covers a conductive layer 204 then.Then form a metal level 206 on the surface of this conductive layer 204, concrete, this metal level 206 is finished by surperficial turmeric technology.Form a dielectric layer 208 then on the surface of this conductive layer 204.
Step S3: with led chip 100 upside-down mountings on this circuit board 200, and the extremely corresponding metal pad 104 of the P that makes this led chip 100 is connected with conductive layer 204 on this circuit board 200, and the N that makes this led chip 100 extremely metal pad 104 of correspondence is connected with metal level 206 on this circuit board 200.Concrete grammar can use, the mode that Reflow Soldering, wave-soldering, hot pressing welding, ultrasonic wire bonding method, thermosonic bonding connect or with adding hyperacoustic nation and decide technology after the heating.
Step S4: reflector 300 is arranged on dielectric layer 208 upper surfaces of this circuit board 200, and makes this led chip 100 be positioned at the receiving space of this reflector 300.
Wherein, the interchangeable order of this step 3 and step 4.
With respect to prior art, upper surface to the zone of the N utmost point that should led chip on the circuit board in the luminescent device of the present invention is provided with a metal level, need not especially at the thickness of the N of this led chip utmost point corresponding position thickening electrode layer or metal pad with the electrode layer of yielding to the P utmost point and the thickness of metal pad, simplify the design and the manufacture craft of led chip, further improved the performance of led chip.In addition, the P utmost point that the heat that led chip in this luminescent device produces can be by LED and the N utmost point and electrode layer thereof and metal pad are transmitted on the conductive layer of circuit board, compare with the conventional package structure, need not to use support, shorten heat dissipation channel, strengthened heat-sinking capability, improved device reliability.And the direct flip chip bonding of this led chip is connected on the circuit board, does not need to beat gold thread during encapsulation, improves device reliability, has saved materials such as support and gold thread, reduces cost.
Embodiment 2:
See also Fig. 4, it is the vertical view of the lumination of light emitting diode device of the embodiment of the invention 2.It has shown the circuit structure that is arranged on a plurality of independently led chips 100 on the same circuit board 200 simultaneously and forms series-parallel connection.These a plurality of independently led chips 100 are realized the electric connection mode that they are different by the wires design of the conductive layer on the circuit board 200 204.Wherein, this circuit board 200 is an aluminium base.
Simultaneously, also can form the luminescent device structure of present embodiment 2 earlier, be divided into a plurality of independently LED luminescent devices unit shown in embodiment 1 by cutting mode then.
Present embodiment circuit board processing is simple, is easy to realize that a plurality of led chips are integrated, modularization and large-area mass production.
The present invention also can have various embodiments, as the single led chip in led chip group replacement the foregoing description of being made up of a plurality of led chips can be set in a reflector.
The present invention is not limited to above-mentioned execution mode, if various changes of the present invention or distortion are not broken away from the spirit and scope of the present invention, if these changes and distortion belong within claim of the present invention and the equivalent technologies scope, then the present invention also is intended to comprise these changes and distortion.
Claims (10)
1. a LED device is characterized in that: comprise
---at least one led chip, this led chip have a N utmost point and a P utmost point, and at surface coverage one electrode layer of this N utmost point and the P utmost point, wherein, this N utmost point and the P extremely thickness of the electrode layer on surface are identical;
---circuit board, the upper surface of this circuit board covers an insulating barrier, the upper surface of this insulating barrier covers a conductive layer, at this conductive layer the upper surface in the zone of the N utmost point that should led chip is provided with a metal level, and this metal layer thickness is the N utmost point of this led chip and the difference in height between the P utmost point;
This led chip upside-down mounting be arranged on this circuit board on, wherein, the P utmost point of this led chip is connected with conductive layer by electrode layer, the N utmost point of this led chip is connected with conductive layer with metal level by electrode layer.
2. LED device according to claim 1, it is characterized in that: also comprise a reflector, the surface of the receiving space of this reflector is provided with a reflector, the upper surface of the conductive layer of this circuit board also is provided with a dielectric layer, this reflector is arranged on this dielectric layer, and makes led chip be positioned at the receiving space of this reflector.
3. LED device according to claim 2 is characterized in that: further comprise a package lens, its top that is arranged on this reflector is sealed in this led chip in the receiving space of reflector.
4. LED device according to claim 1, it is characterized in that: this led chip also comprises metal pad, it covers the surface of the electrode layer of the N utmost point and the P utmost point, the P utmost point of this led chip is connected with conductive layer with metal pad by electrode layer, and the N utmost point of this led chip is connected with conductive layer with metal pad and metal level by electrode layer.
5. LED device according to claim 1 is characterized in that: the material of this metal level is the single metal material of tin, gold, silver, nickel or copper, or multilayer material or the alloy be made up of above-mentioned single metal material.
6. LED device according to claim 1 is characterized in that: the material of this conductive layer is copper, aluminium, nickel metal or organic polymer electric conducting material.
7. LED device according to claim 4 is characterized in that: the electrode layer on this led chip and the material of metal pad are lead, tin, gold, silver, nickel or copper single metal material or multilayer material or the alloy be made up of above-mentioned single metal material.
8. the manufacture method of a LED device is characterized in that: comprise the steps
Step S1: make led chip, growth has the extension disk of nitride multilayer gallium on Sapphire Substrate, sequence of process steps through photoetching, etching, layer metal deposition and passivation layer protection forms the P utmost point and the N utmost point on led chip, form electrode layer on the surface of the P utmost point and the N utmost point then;
Step S2: make circuit board, cover an insulating barrier at the upper surface of circuit board, the upper surface at this insulating barrier covers a conductive layer then, then forms a metal level on the surface of this conductive layer;
Step S3: on this circuit board, and the extremely corresponding electrode layer of the P that makes this led chip is connected with conductive layer on this circuit board with the led chip upside-down mounting, and the N that makes this led chip extremely electrode layer of correspondence is connected with metal level on this circuit board.
9. manufacture method according to claim 8 is characterized in that: this step S2 also comprises step: form a dielectric layer on the surface of this conductive layer; Before or after this step S3, also comprise step: a reflector is arranged on the dielectric layer upper surface of this circuit board, and makes this led chip be positioned at the receiving space of this reflector.
10. manufacture method according to claim 8 is characterized in that: this step S1 also comprises step: form metal pad in this electrode layer surface; The step of this step S3 replaces with: with the led chip upside-down mounting on this circuit board, and the extremely corresponding electrode layer of the P that makes this led chip is connected with metal pad on this circuit board, and the N that makes this led chip extremely electrode layer of correspondence is connected with metal pad on this circuit board.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100764685A CN102185091B (en) | 2011-03-29 | 2011-03-29 | Light-emitting diode device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100764685A CN102185091B (en) | 2011-03-29 | 2011-03-29 | Light-emitting diode device and manufacturing method thereof |
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| CN102185091A true CN102185091A (en) | 2011-09-14 |
| CN102185091B CN102185091B (en) | 2013-06-19 |
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| CN2011100764685A Active CN102185091B (en) | 2011-03-29 | 2011-03-29 | Light-emitting diode device and manufacturing method thereof |
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102427108A (en) * | 2011-11-15 | 2012-04-25 | 中国科学院半导体研究所 | Flip-chip bonding structure for multi-current injection region device and manufacturing method thereof |
| CN102610735A (en) * | 2012-04-01 | 2012-07-25 | 广州大学 | Light-emitting device with thermoelectric separated structure and manufacturing method of light-emitting device |
| CN103165783A (en) * | 2011-12-15 | 2013-06-19 | 铼钻科技股份有限公司 | Flip-chip light emitting diode and manufacturing method and application thereof |
| CN103165782A (en) * | 2011-12-15 | 2013-06-19 | 铼钻科技股份有限公司 | Flip-chip light emitting diode and manufacturing method and application thereof |
| CN103489983A (en) * | 2012-06-11 | 2014-01-01 | 铼钻科技股份有限公司 | Flip-chip light emitting diode and manufacturing method and application thereof |
| CN103779464A (en) * | 2012-10-22 | 2014-05-07 | 铼钻科技股份有限公司 | Flip-chip light emitting diode and application thereof |
| CN105655465A (en) * | 2016-04-07 | 2016-06-08 | 易美芯光（北京）科技有限公司 | COB (chip on board) light source packaging structure for LED and manufacture method of COB light source packaging structure |
| WO2016086446A1 (en) * | 2014-12-02 | 2016-06-09 | 深圳市华星光电技术有限公司 | Light-emitting diode and manufacturing method for light-emitting diode |
| CN110233149A (en) * | 2018-05-09 | 2019-09-13 | 深圳市聚飞光电股份有限公司 | LED support production method, LED support and LED |
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| CN110473944A (en) * | 2018-05-09 | 2019-11-19 | 深圳市聚飞光电股份有限公司 | Multipurpose LED support and LED |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102427108A (en) * | 2011-11-15 | 2012-04-25 | 中国科学院半导体研究所 | Flip-chip bonding structure for multi-current injection region device and manufacturing method thereof |
| CN103165783A (en) * | 2011-12-15 | 2013-06-19 | 铼钻科技股份有限公司 | Flip-chip light emitting diode and manufacturing method and application thereof |
| CN103165782A (en) * | 2011-12-15 | 2013-06-19 | 铼钻科技股份有限公司 | Flip-chip light emitting diode and manufacturing method and application thereof |
| CN102610735A (en) * | 2012-04-01 | 2012-07-25 | 广州大学 | Light-emitting device with thermoelectric separated structure and manufacturing method of light-emitting device |
| CN102610735B (en) * | 2012-04-01 | 2014-08-13 | 广州大学 | Light-emitting device with thermoelectric separated structure and manufacturing method of light-emitting device |
| CN103489983A (en) * | 2012-06-11 | 2014-01-01 | 铼钻科技股份有限公司 | Flip-chip light emitting diode and manufacturing method and application thereof |
| CN103489983B (en) * | 2012-06-11 | 2016-06-29 | 铼钻科技股份有限公司 | Flip-chip light emitting diode and manufacturing method and application thereof |
| CN103779464A (en) * | 2012-10-22 | 2014-05-07 | 铼钻科技股份有限公司 | Flip-chip light emitting diode and application thereof |
| WO2016086446A1 (en) * | 2014-12-02 | 2016-06-09 | 深圳市华星光电技术有限公司 | Light-emitting diode and manufacturing method for light-emitting diode |
| CN105655465A (en) * | 2016-04-07 | 2016-06-08 | 易美芯光（北京）科技有限公司 | COB (chip on board) light source packaging structure for LED and manufacture method of COB light source packaging structure |
| CN110233149A (en) * | 2018-05-09 | 2019-09-13 | 深圳市聚飞光电股份有限公司 | LED support production method, LED support and LED |
| CN110233198A (en) * | 2018-05-09 | 2019-09-13 | 深圳市聚飞光电股份有限公司 | Route LED support production method, route LED support and LED |
| CN110473944A (en) * | 2018-05-09 | 2019-11-19 | 深圳市聚飞光电股份有限公司 | Multipurpose LED support and LED |
| CN110233198B (en) * | 2018-05-09 | 2021-04-06 | 芜湖聚飞光电科技有限公司 | Circuit LED support manufacturing method, circuit LED support and LED |
| WO2020062746A1 (en) * | 2018-09-27 | 2020-04-02 | 昆山工研院新型平板显示技术中心有限公司 | Drive backplate and preparation method therefor, and display apparatus |
| CN110957341A (en) * | 2018-09-27 | 2020-04-03 | 昆山工研院新型平板显示技术中心有限公司 | Driving back plate and preparation method thereof, Micro-LED chip and preparation method thereof and display device |
| CN110473865A (en) * | 2019-08-20 | 2019-11-19 | 济南南知信息科技有限公司 | A kind of energy-saving LED lighting apparatus and its manufacturing method |
| CN111970816A (en) * | 2020-08-27 | 2020-11-20 | 合肥鑫晟光电科技有限公司 | Drive circuit backboard, manufacturing method thereof and backlight module |
| CN111970816B (en) * | 2020-08-27 | 2022-01-25 | 合肥鑫晟光电科技有限公司 | Drive circuit backboard, manufacturing method thereof and backlight module |
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