CN102176093A - Film transistor array substrate - Google Patents

Film transistor array substrate Download PDF

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Publication number
CN102176093A
CN102176093A CN2010105725644A CN201010572564A CN102176093A CN 102176093 A CN102176093 A CN 102176093A CN 2010105725644 A CN2010105725644 A CN 2010105725644A CN 201010572564 A CN201010572564 A CN 201010572564A CN 102176093 A CN102176093 A CN 102176093A
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CN
China
Prior art keywords
film transistor
thin
transistor array
array base
plate
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Pending
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CN2010105725644A
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Chinese (zh)
Inventor
廖宇崴
罗时勋
郑翔远
袁山富
郑佳阳
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AU Optronics Corp
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AU Optronics Corp
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Publication date
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Priority to CN2010105725644A priority Critical patent/CN102176093A/en
Publication of CN102176093A publication Critical patent/CN102176093A/en
Pending legal-status Critical Current

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Abstract

The invention discloses a film transistor array substrate which comprises a transparent substrate, a plurality of gate lines, a plurality of data line, a switch element, a pixel electrode and a repair patch, wherein the plurality of gate lines are arranged on the transparent substrate at a certain interval; the plurality of data lines are arranged on the transparent substrate at a certain interval together with the plurality of gate lines, and two adjacent data lines and two gate lines define a pixel area; the switch element which is respectively electrically connected with one corresponding gate line and one data line, and the switch element is provided with an output electrode, the extension part of the output electrode extends up and down along a first lateral edge of the pixel area to a second lateral edge and a third lateral edge of the pixel area, and then extends along the second lateral edge and the third lateral edge after turning 90 degrees; the pixel electrode is positioned in the pixel area, partially overlapped with the extension part and electrically connected with the output electrode; the repair patch is electrically connected with the adjacent gate line and partially overlapped with the pixel electrode and the extension part. According to the design of the film transistor array substrate, the repair patch is partially overlapped with the pixel electrode and the extension part, so that the pixel electrode has high aperture ratio.

Description

A kind of thin-film transistor array base-plate
Technical field
The present invention relates to a kind of thin-film transistor array base-plate, relate in particular to the structure of pixel electrode and thin film transistor (TFT) in the thin film transistor (TFT) of a kind of liquid crystal display fluorescent screen.
Background technology
A typical liquid crystal (LCD) has the structure of similar sandwich, comprising a transistor (TFT) array substrate, and colored optical filtering substrates, and the liquid crystal layer between transistor (TFT) array substrate and colored optical filtering substrates.
Transistor (TFT) array substrate generally includes many gate lines and data line, and by a plurality of picture elements zone that gate line and data line defined out.The picture element unit lays respectively in each corresponding picture element zone.Each picture element unit comprises thin film transistor (TFT) (TFT) and pixel electrode, and the voltage of pixel electrode is that the TFT that is connected by it is controlled.
Colored optical filtering substrates generally includes a substrate and position color filter layers thereon, and color filter layers is red optical filter, green optical filter and blue optical filter, shows predetermined color after white light input backlight.Each optical filter correspondence a pixel electrode.
Fig. 1 is traditional thin film transistor base plate structural design synoptic diagram, and transistor (TFT) array substrate 100 comprises an insulated substrate 110, the first and second gate lines G L1 and GL2, the first and second data line DL1 and DL2, thin film transistor (TFT) 120, pixel electrode 130 and storage capacitors bottom electrode line SL.Illustrated that at first gate lines G L1 is the grid that is coupled to adjacent next TFT.Gate lines G L2 then is the grid 121 that is coupled to TFT 120.The data line DL2 on right side is coupled to the source electrode of adjacent next TFT.First data line DL1 in left side then is the source electrode 122 that is coupled to TFT 120.Repair 140 on pad and GL1 electric property coupling.
Pixel electrode 130 is a transparency electrode, is formed at picture element zone PA and has taken picture element zone PA, and pixel electrode 130 is by the output electrode of contact mat 131 electric connection thin film transistor (TFT)s, drain electrode 123.As shown in Figure 1.The drain electrode 123 of thin film transistor (TFT) 120 comprises the part 123A of an expansion, along the big turning of the upper left corner, picture element zone 90 degree, extends along picture element zone PA long side 130a then.Drain electrode 123 is opaque, thereby prevents the light leakage in the marginal portion of a pixel electrode 130.Storage capacitors bottom electrode line SL adds a common voltage, and such as being ground voltage, the marginal portion of storage capacitors bottom electrode line SL and pixel electrode 130 is overlapping.
Repair pad 140 under the part 123A and the pixel electrode 130 between the storage capacitors bottom electrode line SL of drain extended, the picture element defect problem of the picture element zone place life that can be used for repairing makes the picture element that defective takes place become "off" state.That is to say,, electrically connect repairing pad 140 and pixel electrode 130 by laser when a maintenance that comes into force.Therefore, when GL2 opens (noble potential), GL1 is an electronegative potential, and pixel electrode 130 sees through repairing pad 140 and also keeps electronegative potential, closes the picture element area so defective pixel electrode 130 shows as one all the time, to avoid in liquid crystal display fluorescent screen bright spot taking place.
But drain electrode and to repair pad all be opaque has great influence for the aperture opening ratio of picture element.In view of this, designing the aperture opening ratio that increases picture element how, is the problem that those skilled in the art need to be resolved hurrily.
Summary of the invention
At the existing above-mentioned defective of TFT in the prior art, the invention provides a kind of thin-film transistor array base-plate, it is characterized in that, comprising:
Transparency carrier;
A plurality of gate lines, each other with certain spacing arrangement on described transparency carrier;
A plurality of data lines are arranged on the described transparency carrier with a determining deviation and described a plurality of gate line insulation each other, and adjacent two described data lines and adjacent two described gate lines define picture element region;
On-off element, electrically connect corresponding a described gate line and a described data line respectively, described on-off element has output electrode, after the expansion of described output electrode extends to described picture element second side, zone and the 3rd side up and down along first side, described picture element zone, turn 90 degrees the back along described second side and described the 3rd side extend;
Pixel electrode is positioned at described picture element region, overlaps with described expansion and electrically connects with described output electrode; And
Repair pad, with the adjacent gate polar curve electric connection of described gate line, described repairing pad and described pixel electrode and described expansion are overlapped.
Preferably, thin-film transistor array base-plate more comprises storage capacitors bottom electrode line, also overlaps with it in the below that is positioned at the described pixel electrode of described picture element zone four side at least.
Preferably, described repairing pad is a polygon, can be for square, trapezoidal or the like.
Preferably, described repairing pad is half garden shape.
Can add a common voltage on the described storage capacitors bottom electrode line, generally speaking the common voltage that is added can be a ground voltage.
Adopt thin-film transistor array base-plate of the present invention, see through to repair to fill up and overlap, can increase the aperture opening ratio of picture element with described pixel electrode and described expansion.
Description of drawings
The reader will become apparent various aspects of the present invention after the reference accompanying drawing has been read the specific embodiment of the present invention.Wherein,
Fig. 1 is traditional thin film transistor base plate structural design synoptic diagram;
Fig. 2 is the thin film transistor base plate structural design synoptic diagram according to one embodiment of the invention.
Embodiment
With reference to the accompanying drawings, the specific embodiment of the present invention is described in detail.
Please refer to Fig. 2 and be thin film transistor base plate structural design synoptic diagram according to one embodiment of the invention.Transistor (TFT) array substrate 200 comprises an insulated substrate 210, the first and second gate lines G L1 and GL2, the first and second data line DL1 and DL2, thin film transistor (TFT) 220, pixel electrode 230 and storage capacitors bottom electrode line SL.Illustrated that at first gate lines G L1 is the grid that is coupled to adjacent next TFT.Gate lines G L2 then is the grid 221 that is coupled to TFT 220.The data line DL2 on right side is coupled to the source electrode of adjacent next TFT.First data line DL1 in left side then is the source electrode 222 that is coupled to TFT 220.
Pixel electrode 230 is a transparency electrode, is formed in the PA of picture element zone, and pixel electrode 230 is by the output electrode of contact mat 231 electric connection thin film transistor (TFT)s, drain electrode 223.As shown in Figure 2.The drain electrode 223 of thin film transistor (TFT) 220 comprises the part 223A of an expansion, extend to picture element zone second side 230b and the 3rd side 230c up and down along picture element zone first side 230a after, turn 90 degrees the back and extend along second side 230b and the 3rd side 230c.Drain electrode 223 is opaque, thereby prevents the light leakage in the marginal portion of a pixel electrode 230.
Storage capacitors bottom electrode line SL is positioned at picture element area part second side 230b, part the 3rd side 230c and four side 230d, and UNICOM is between each picture element zone.Storage capacitors bottom electrode line SL and pixel electrode 230 are overlapped.Storage capacitors bottom electrode line SL adds a common voltage, such as being ground voltage.
Repair 240 on pad and GL1 electric property coupling, repair pad 240 and be positioned under drain extended part 223A and the pixel electrode 230, the picture element defect problem of the picture element zone place life that can be used for repairing makes the picture element that defective takes place become "off" state.That is to say,, electrically connect repairing pad 240 and pixel electrode 230 by laser when a maintenance that comes into force.Therefore, when GL2 opens (noble potential), GL1 is an electronegative potential, and pixel electrode 230 sees through repairing pad 240 and also keeps electronegative potential, closes the picture element area so defective pixel electrode 230 shows as one all the time, to avoid in liquid crystal display fluorescent screen bright spot taking place.
In the present embodiment, repair pad be no longer limited to square, can also be for example trapezoidal or the like for polygon.Repair pad and also can be half garden shape.
Adopt thin-film transistor array base-plate of the present invention, see through to repair to fill up and overlap with described pixel electrode and described expansion, repair the restriction of pad on shaped design except removing, the more important thing is the aperture opening ratio that can increase picture element, solve the problem of traditional thin film transistor base plate structural design upper shed rate deficiency.
Above, describe the specific embodiment of the present invention with reference to the accompanying drawings.But those skilled in the art can understand, and under situation without departing from the spirit and scope of the present invention, can also do various changes and replacement to the specific embodiment of the present invention.These changes and replace all drop in claims of the present invention institute restricted portion.

Claims (10)

1. a thin-film transistor array base-plate is characterized in that, comprising:
Transparency carrier;
A plurality of gate lines, each other with certain spacing arrangement on described transparency carrier;
A plurality of data lines are arranged on the described transparency carrier with a determining deviation and described a plurality of gate line insulation each other, and adjacent two described data lines and adjacent two described gate lines define picture element region;
On-off element, electrically connect corresponding a described gate line and a described data line respectively, described on-off element has output electrode, after the expansion of described output electrode extends to described picture element second side, zone and the 3rd side up and down along first side, described picture element zone, turn 90 degrees the back along described second side and described the 3rd side extend;
Pixel electrode is positioned at described picture element region, overlaps with described expansion and electrically connects with described output electrode; And
Repair pad, with the adjacent gate polar curve electric connection of described gate line, described repairing pad and described pixel electrode and described expansion are overlapped.
2. thin-film transistor array base-plate as claimed in claim 1 is characterized in that, described thin-film transistor array base-plate more comprises storage capacitors bottom electrode line, also overlaps with it in the below that is positioned at the described pixel electrode of described picture element zone four side at least.
3. thin-film transistor array base-plate as claimed in claim 2 is characterized in that, described storage capacitors bottom electrode line adds a common voltage.
4. thin-film transistor array base-plate as claimed in claim 3 is characterized in that, described storage capacitors bottom electrode line adds a ground voltage.
5. thin-film transistor array base-plate as claimed in claim 1 is characterized in that, described repairing pad is a polygon.
6. thin-film transistor array base-plate as claimed in claim 5 is characterized in that, described repairing pad is square.
7. thin-film transistor array base-plate as claimed in claim 5 is characterized in that, described repairing pad is trapezoidal.
8. thin-film transistor array base-plate as claimed in claim 1 is characterized in that, described repairing pad is half garden shape.
9. thin-film transistor array base-plate as claimed in claim 1 is characterized in that, described on-off element is a thin film transistor (TFT).
10. thin-film transistor array base-plate as claimed in claim 1 is characterized in that, described output electrode is a source electrode.
CN2010105725644A 2010-11-29 2010-11-29 Film transistor array substrate Pending CN102176093A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2010105725644A CN102176093A (en) 2010-11-29 2010-11-29 Film transistor array substrate

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Application Number Priority Date Filing Date Title
CN2010105725644A CN102176093A (en) 2010-11-29 2010-11-29 Film transistor array substrate

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CN102176093A true CN102176093A (en) 2011-09-07

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019184693A1 (en) * 2018-03-26 2019-10-03 京东方科技集团股份有限公司 Array substrate and preparation method therefor, repair method for array substrate, and display device
CN113419385A (en) * 2021-05-31 2021-09-21 北海惠科光电技术有限公司 Display panel, preparation method thereof and display device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019184693A1 (en) * 2018-03-26 2019-10-03 京东方科技集团股份有限公司 Array substrate and preparation method therefor, repair method for array substrate, and display device
US11127933B2 (en) 2018-03-26 2021-09-21 Boe Technology Group Co., Ltd. Array substrate and method for manufacturing the same, method for repairing array substrate and display apparatus
CN113419385A (en) * 2021-05-31 2021-09-21 北海惠科光电技术有限公司 Display panel, preparation method thereof and display device
CN113419385B (en) * 2021-05-31 2022-09-27 北海惠科光电技术有限公司 Display panel, preparation method thereof and display device

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Application publication date: 20110907