CN102170085B - Biasing method electro-optical Q-switched double-wavelength laser - Google Patents
Biasing method electro-optical Q-switched double-wavelength laser Download PDFInfo
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- CN102170085B CN102170085B CN 201110071777 CN201110071777A CN102170085B CN 102170085 B CN102170085 B CN 102170085B CN 201110071777 CN201110071777 CN 201110071777 CN 201110071777 A CN201110071777 A CN 201110071777A CN 102170085 B CN102170085 B CN 102170085B
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Abstract
A biasing method electro-optical Q-switched double-wavelength laser relates to a laser, in particular to a biasing method electro-optical Q-switched Nd:YAG (Neodymium Doped Yttrium Aluminum Garnet) 1064nm and 1319nm double-wavelength laser. A lithium niobate electro-optical Q-switched single crystal and a bias boosting type electro-optical Q-switching manner are adopted to perform electro-optical Q-switch synchronously for the 1064nm and 1319nm double-wavelength laser; after the voltage applied to the Q-switched crystal deviates the lambda/4 principal voltage of a 1064nm laser, the 1064nm strong spectral line is reasonably restrained according to the mechanism of polarizer loss, so as to obtain the dynamic outputs of the 1064nm and 1319nm double-wavelength laser. Due to the design of the complete machine, the laser structure is effectively simplified, and the difficulty for synchronous electro-optical Q-switching of Nd:YAG 1064nm and 1319nm double-wavelength lasers is reduced. The method has the advantages of all sidedness, accuracy, convenience and the like, and is suitable for the electro-optic Q-switch technical research of the double-wavelength laser. The biasing method electro-optical Q-switched double-wavelength laser can be used in fields of optical laser radars, laser medical treatment and the like.
Description
Technical field
The present invention relates to a kind of accent Q dual laser, especially relate to electric-optically Q-switched Nd:YAG1064nm of a kind of bias voltage method and 1319nm dual laser.Be applicable to the electric-optically Q-switched technical research of dual laser, application comprises fields such as laser radar, laser medicine.
Background technology
Dual laser is widely used in each field such as laser radar, laser medicine.In some fields, need the output of dual-wavelength laser Q impulse, owing to have wavelength difference between the dual-wavelength laser, thereby have the inconsistent problem of accent Q condition between two wavelength inevitably.Can cause dual-wavelength laser can't simultaneously dynamically export or export asynchronous if Q-regulating method is improper, show as mainly that dual-wavelength laser output life period postpones, the equal problem of dual-wavelength laser repetition rate.
Chinese scholars has been carried out a large amount of theories and experimental work for the dual-wavelength laser Q-regulating technique; Major side overweights that dual-wavelength laser is passive Q-adjusted, acousto-optic Q modulation and electric-optically Q-switched technology; The laser conversion efficiency that adopts the acousto-optic Q modulation technology to modulate is higher, beam quality better, stability is higher; But the acousto-optic Q modulation technology is only applicable to the middle low power laser, and debugging is comparatively complicated, and cost is higher; Adopt the laser structure of passive Q-adjusted technology modulation simple relatively; But passive Q-adjusted switch turn-offs artificial uncontrollable and in order to make the double-wavelength pulse repetition rate equate; Often need in light path, insert some particular device, this makes the laser light path adjustment relative complex that becomes; Adopt electric-optically Q-switched method actually rare; The Y of employing cavity structures, two electric-optically Q-switched crystal or the dull Q crystal of periodically poled lithium niobate carry out dual-wavelength laser and transfer Q more; The former need carry out very complicated debugging to two electro-optical Q-switchs; Could make between two Q switchings not free the delay that it is too high that the latter then need carry out strict temperature control and installation cost to the dull Q crystal of periodically poled lithium niobate.And need the electric-optically Q-switched dual-wavelength laser light source of peak value high power in some field, and structure and debugging is simple and easy more, the complete machine cost is low more good more, for this reason, can adopt single electric-optically Q-switched crystal, the method for bias voltage pressurization realizes this purpose.
The invention provides the electric-optically Q-switched method and apparatus of a kind of bias voltage method dual-wavelength laser.Adopt the electric-optically Q-switched crystal of single lithium niobate; The electric-optically Q-switched mode of bias voltage adding pressure type is carried out electric-optically Q-switched to 1064nm and 1319nm dual-wavelength laser simultaneously; Depart from after 1064nm laser λ/4 principal voltages mechanism according to adjusting Q crystal institute making alive through polarizer loss; The 1064nm intense line is rationally suppressed, thereby acquisition 1064nm and 1319nm dual-wavelength laser are dynamically exported.Entire machine design has effectively been simplified laser structure, has reduced the simultaneously electric-optically Q-switched difficulty of Nd:YAG1064nm and 1319nm dual-wavelength laser.This method has comprehensively, succinct, low cost and other advantages, is applicable to the electric-optically Q-switched technical research of dual laser.
Summary of the invention
The objective of the invention is to be directed against existing Nd:YAG dual wavelength structure that electro-optical Q-switching laser adopts comparatively complicated (two adjusting Q crystal); The complete machine cost is higher, provides that a kind of structure is simple relatively, the complete machine cost is lower, the novel Nd:YAG dual wavelength electro-optical Q-switching laser of better performances.
The present invention is provided with:
1319nm laser optical path and 1064nm laser optical path.Wherein the 1319nm laser optical path comprises that the 1319nm film is a total reflective mirror; λ/4 wave plates (1319nm) is between 1319nm total reflective mirror and etalon; Etalon is between λ/4 wave plates and 45 degree total reflective mirrors; 45 degree total reflective mirrors are between lithium niobate adjusting Q crystal and etalon; The lithium niobate adjusting Q crystal is between the 45 degree total reflective mirrors and the polarizer; The polarizer is between sour lithium adjusting Q crystal and Nd:YAG pump head; The Nd:YAG pump head is between the polarizer and outgoing mirror; Laser output mirror.The 1064nm laser optical path comprises that the 1064nm film is a total reflective mirror; λ/4 wave plates (1064nm) is between total reflective mirror and the 45 degree total reflective mirrors 11 at the 1064nm film; 45 degree total reflective mirrors 11 are positioned between λ/4 wave plates (1064nm) and the 45 degree total reflective mirrors 4; Laser output mirror.
In the laser design process; The present invention adopts etalon to suppress the unnecessary spectral line concussion of 1338nm; Be coated with the 1319nm anti-reflection film of T＞85%, suppress the method for the unnecessary spectral line concussion of 1338nm with the plated film that generally uses and compare, its cost is lower, feasibility is higher, it is more remarkable to suppress effect.In addition; The present invention selects single lithium niobate adjusting Q crystal for use; The electric-optically Q-switched method of bias voltage, the logical light of pressurization is transferred Q simultaneously to 1064nm and 1319nm dual-wavelength laser, and its two-sided 1064nm and double-colored anti-reflection film of 1319nm that is coated with T＞95% also suppresses the 1064nm intense line when 1064nm and 1319nm dual-wavelength laser are transferred Q to a great extent; Make complete machine structure more simple, the complete machine cost reduces relatively.
Operation principle of the present invention is following:
When the electric-optically Q-switched crystal of lithium niobate not during making alive, 1064nm and 1319nm light become linearly polarized light through behind the polarizer 6, and the polarization direction and the polarizer are always; Do not apply voltage through the electric-optically Q-switched switch of lithium niobate 5 backs owing to the lithium niobate crystal surface, so light still keeps original polarization direction; Through behind λ/4 phase place wave plates separately, two-beam plane of polarization rotation 45 degree become circularly polarized light when for the first time; After the total reflective mirror reflection, 1064nm and 1319nm light pass through λ/4 phase place wave plates separately once more, and plane of polarization continues rotation 45 degree, becomes linearly polarized light, and its polarization direction and the polarizer are 90 degree; For the second time through still keeping former polarization direction no change behind the electric-optically Q-switched switch of lithium niobate; When arriving the polarizer 6 again, because the two-beam plane of polarization all is 90 degree with the polarizer,, promptly reach the effect of obstructed light simultaneously so can not pass through the polarizer, also be so-called shut the gate state.
When the crystal making alive (institute's making alive is the brilliant pressures in 1319nm light λ/4); Because 90 degree have been rotated in the influence of lithium columbate crystal electro optic effect, the non-pressurized situation of 1319nm light polarization face ratio lithium niobate crystal more, when 1319nm light arrives the polarizer again; It is parallel to each other that its plane of polarization and the polarizer are 180 degree; Can normally pass through the polarizer, just reached logical light effect this moment, and state promptly " opens the door "; And for 1064nm light, because lithium niobate adjusting Q crystal institute making alive is 1319nm light λ/4 crystalline substance pressures, so after 1064nm light is through the electric-optically Q-switched crystal of lithium niobate; The change of its plane of polarization can depart from 45 degree, and when promptly 1064nm light arrived the polarizer again, its plane of polarization can not be 180 degree with the polarizer; 1064nm light can become elliptically polarized light in fact; When through the polarizer, can produce certain loss, but still can reach logical light effect, state promptly " opens the door ".
Outstanding effect of the present invention will further explanation in addition in embodiment.
Description of drawings
Fig. 1 is the electric-optically Q-switched dual laser installation drawing of bias voltage method;
Fig. 2 is a Nd:YAG pump head cutaway view.
Embodiment
As shown in Figure 1, the present invention comprises three parts: the design of 1319nm laser resonance cavity, the design of 1064nm laser resonance cavity, the electric-optically Q-switched system design of lithium niobate.More particularly, the present invention constitutes (from left to right) by following device:
The 1319nm film is that the electric-optically Q-switched switch of total reflective mirror 1,1319nm λ/4 wave plate 2,3,45 ° of total reflective mirrors 4 of F-P etalon, lithium niobate 5, the polarizer 6, Nd:YAG pump head 7, laser output mirror 8,1064nm film are total reflective mirror 9,1064nm λ/10,45 ° of total reflective mirrors 11 of 4 wave plates.
The 1319nm film is total reflective mirror 1, F-P etalon 3, Nd:YAG pump head 7, the laser output mirror 8 common 1319nm of formation laser resonance cavitys:
Wherein the 1319nm total reflective mirror adopts the level crossing structure, and clear aperature is Φ 20, and plating 1319nm high-reflecting film (reflectivity R＞99.5%) is as the 1319nm laserresonator chamber mirror that is all-trans.
The F-P etalon is coated with 1319nm high transmittance film (transmitance T ≈ 95%), and clear aperature is Φ 8.When 1319nm spectral line incident angle satisfies F-P etalon interference field intensity maximum condition; 1319nm light can be all through the F-P etalon; And the unnecessary spectral line incident angle of 1338nm etc. this moment can't satisfy F-P etalon interference field intensity maximum condition; By significantly decay, cause the unnecessary spectral line such as 1338nm can't starting of oscillation even if small deviation also causes 1338nm light to approach destructive interference, reach the inhibition effect.
As shown in Figure 2, the Nd:YAG pump head adopts xenon flash lamp pumping diffuse-reflective cavity structure, comprises laser head end cap seal circle 12; Nd:YAG gain media 13, gain media sealing ring 14, laser pumping diffuse reflection cavity 15; Gain media gland 16, xenon lamp sealing ring 17, pumping lamp xenon lamp 18.The Nd:YAG pump head is by xenon flash lamp pumping, and after the reflection of laser pumping diffuse reflection cavity, light evenly gathers on the Nd:YAG gain media, makes it produce higher gain and obtains laser output.Wherein two-sided plating 1064nm of Nd:YAG gain media and the double-colored anti-reflection film of 1319nm (transmitance T＞99.5%), to reduce cavity loss, the Nd:YAG pump head is positioned on the accurate adjustment rack of five dimensions, is convenient to be adjusted on the same light path.
Laser output cavity mirror adopts the level crossing structure, and clear aperature Φ 20, two-sided plating 1064nm and 1319nm Double-color film, and concrete plated film index is following: 1064nm part transmission (transmitance T=91%), 1319nm part transmission (transmitance T=15%).
4,45 ° of total reflective mirrors 11 of 9,45 ° of total reflective mirrors of 1064nm total reflective mirror, Nd:YAG pump head 7, laser output mirror 8 common formation 1064nm laser resonance cavitys:
Wherein the 1064nm total reflective mirror adopts the level crossing structure, and clear aperature is Φ 20, and plating 1064nm high-reflecting film (reflectivity R＞99.5%) is as the 1064nm laserresonator chamber mirror that is all-trans; 45 ° of total reflective mirror 11 clear aperatures are Φ 20, high anti-(reflectivity R＞99.5%) deielectric-coating of plating 1064nm; 45 ° of total reflective mirror 4 clear aperatures are Φ 20, plating 1064nm and the double-colored deielectric-coating of 1319nm, and concrete plated film index is following: high anti-(reflectivity R＞99.5%) deielectric-coating of 1064nm, high (transmitance T＞99.5%) deielectric-coating that passes through of 1319nm.
The electric-optically Q-switched switch of λ/4 wave plate 2, λ/4 wave plate 10, the polarizer 6, lithium niobate 5 is common to constitute the electric-optically Q-switched system of lithium niobates:
Wherein λ/4 wave plates, 10 clear aperatures are Φ 20, are coated with high (transmitance T＞99.5%) deielectric-coating that passes through of 1064nm, 1064nm light are produced the phase delay of pi/2; λ/4 wave plates, 2 clear aperatures are Φ 20, are coated with high (transmitance T＞99.5%) deielectric-coating that passes through of 1319nm, 1319nm light are produced the phase delay of pi/2; Two-sided 1064nm and high (transmitance T＞98%) deielectric-coating that passes through of 1319nm of being coated with of the polarizer is used for 1064nm and 1319nm light rises simultaneously partially.
The electric-optically Q-switched switch of lithium niobate is made up of power supply, the electric-optically Q-switched box of lithium niobate, lithium columbate crystal, and its power supply adopts the QBD series electro-optical Q-switch power supply that boosts, and pulse repetition frequency is that 0～5KHz is adjustable; The electric-optically Q-switched box of lithium niobate adopts all-aluminium construction, but as in the optically-active adjustment rack (PM101), is convenient to optically-active; Lithium columbate crystal is of a size of long l=25mm, wide d=9mm, high h=9mm; Two-sided 1064nm and high (transmitance T＞99.5%) deielectric-coating that passes through of 1319nm of being coated with; Adopting laterally pressurizes, boosts transfers the Q mode, and adjusting Q crystal pressurization voltage is the V=1914 volt, when crystal pressurizes; 1064nm laser optical path and 1319nm laser optical path are in logical light state simultaneously; This moment, the institute making alive departed from 1064nm light λ/4 voltages, and this phase delay that is produced when making 1064nm light through lithium columbate crystal is not pi/2, so when 1064nm light passes through the polarizer, have only 1/10 light to pass through; Thereby reached the purpose that the 1064nm intense line is necessarily suppressed, made 1064nm and 1319nm laser can transfer Q output simultaneously.
Though the dual laser gain media of different-waveband is different, its method for designing is identical.Then according to actual needs, go out to be similar to experimental provision shown in Figure 1 according to designing method of the present invention, change corresponding plating membrane system of device and size, the change adjusting Q crystal adds brilliant the pressure and gets final product.
Claims (3)
1. the electric-optically Q-switched dual laser of bias voltage method utilizes 45 degree total reflective mirrors that 1064nm and 1319nm laser optical path are separated, and adopts the electric-optically Q-switched crystal of single lithium niobate as 1064nm and 1319nm dual-wavelength laser adjusting Q crystal; Between the 45 degree total reflective mirrors and the polarizer, the 1064nm and the double-colored height of 1319nm of the two-sided plating R of the electric-optically Q-switched crystal of lithium niobate＞99.5% pass through deielectric-coating, adopt the electric-optically Q-switched mode of bias voltage adding pressure type to carry out electric-optically Q-switched simultaneously to 1064nm and 1319nm dual-wavelength laser; 1914 volts of adjusting Q crystal pressurization voltages are 1319nm light λ/4 voltages, deviate from 1064nm light λ/4 voltages; 45 degree total reflective mirrors; Between lithium niobate adjusting Q crystal and etalon, as the spectroscope of laser, laser output plane mirror; Be positioned at the output of Nd:YAG laser crystal, as the output cavity mirror of dual laser.
2. the electric-optically Q-switched dual laser of bias voltage method as claimed in claim 1 is characterized in that 45 degree total reflective mirrors adopt the high 1319nm height anti-and T＞99.5% of 1064nm of plating R＞99.5 to pass through double-colored deielectric-coating.
3. the electric-optically Q-switched dual laser of bias voltage method as claimed in claim 1 is characterized in that laser output plane mirror adopts the 1064nm part transmission of plating T=91% and the double-colored deielectric-coating of 1319nm part transmission of T=15%.
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| CN 201110071777 CN102170085B (en) | 2011-03-24 | 2011-03-24 | Biasing method electro-optical Q-switched double-wavelength laser |
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| CN102637995A (en) * | 2012-04-25 | 2012-08-15 | 天津大学 | Dual-wavelength or multi-wavelength laser with adjustable power proportion |
| CN110932075B (en) * | 2019-05-09 | 2021-09-17 | 长春理工大学 | Dual-wavelength pulse pair laser output method and laser |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1089403A1 (en) * | 1999-09-28 | 2001-04-04 | Enel Societa'per Azioni | Single longitudinal mode Q-switched laser |
| CN1635672A (en) * | 2003-12-31 | 2005-07-06 | 中国科学院福建物质结构研究所 | Four-wavelength electro-optical Q-regulation pulse laser |
| CN101226282A (en) * | 2008-01-22 | 2008-07-23 | 长春理工大学 | Electro-optical modulator |
| CN201349092Y (en) * | 2008-12-17 | 2009-11-18 | 中国科学院上海光学精密机械研究所 | All-solid-state electro-optical Q-switched green laser |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20080002751A1 (en) * | 2005-08-10 | 2008-01-03 | Gongxue Hua | High damage threshold Q-switched CO2 laser |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1089403A1 (en) * | 1999-09-28 | 2001-04-04 | Enel Societa'per Azioni | Single longitudinal mode Q-switched laser |
| CN1635672A (en) * | 2003-12-31 | 2005-07-06 | 中国科学院福建物质结构研究所 | Four-wavelength electro-optical Q-regulation pulse laser |
| CN101226282A (en) * | 2008-01-22 | 2008-07-23 | 长春理工大学 | Electro-optical modulator |
| CN201349092Y (en) * | 2008-12-17 | 2009-11-18 | 中国科学院上海光学精密机械研究所 | All-solid-state electro-optical Q-switched green laser |
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