CN102163625A - Semiconductor layer material-indium zinc titanium oxide for oxide thin film transistor - Google Patents
Semiconductor layer material-indium zinc titanium oxide for oxide thin film transistor Download PDFInfo
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- CN102163625A CN102163625A CN 201110064561 CN201110064561A CN102163625A CN 102163625 A CN102163625 A CN 102163625A CN 201110064561 CN201110064561 CN 201110064561 CN 201110064561 A CN201110064561 A CN 201110064561A CN 102163625 A CN102163625 A CN 102163625A
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Abstract
The invention belongs to the technical field of thin film transistor devices, in particular relating to a semiconductor layer material for an oxide thin film transistor. The semiconductor layer material is an indium zinc titanium oxide, wherein the proportion of components, namely indium, zinc and titanium is controlled within a certain range. The invention further provides a thin film transistor using the oxide as a trench layer material. The obtained thin film transistor has good application prospects in the field of flat panel display.
Description
Technical field
The invention belongs to the thin-film transistor technologies field, be specifically related to a kind of oxide material that can be used for the thin-film transistor semiconductor layer.
Background technology
(Thin Film Transistor is that semiconductor layer is the general designation of the field-effect transistor of membrane structure TFT) to thin-film transistor.TFT is applied to various demonstrations or sensing equipment as auxiliary element, and especially (Liquid Crystal Displays, the LCD) application in provide technical foundation for LCD reaches higher picture quality and large tracts of landization in LCD.(Organic Light Emitting Displays OLED) and Electronic Paper etc., adopts the TFT technology also can effectively improve performance for new display such as organic electroluminescent display.
That be most widely used at LCD at present, is the amorphous silicon (TFT of α-Si).This class TFT as semiconductor layer, can adopt traditional thin film deposition process to prepare on the large-area glass substrate with α-Si film, thereby with low cost, but it causes mobility and is generally less than 1 cm
2/ Vs, and under the effect of voltage pressure the less stable of device, can only be used as switch element usually.With polysilicon (poly-Si) is that the field that the poly-Si TFT of semiconductor layer has than the α-high 1-2 of Si TFT order of magnitude causes mobility, also more superior on device stability, not only can be used as switch element, can also form the process auxiliary drive circuit as driving element, but complicated process of preparation, cost is higher and be difficult to be applied to large-area substrates.
Oxide TFT be with based on the oxide of metallic elements such as In, Zn, Ga, Sn as semiconductor layer.This class TFT can adopt on the one hand the traditional thin film deposition process preparation, is applicable to the large-area glass substrate, and it is higher to cause mobility on the other hand, at 10 cm
2About/Vs, there are some researches show that its stability also is better than α-Si TFT, thereby be regarded as a kind of very promising TFT device.Remove outside the above-mentioned advantage, preparation technology's temperature of oxide TFT is also lower, can directly prepare on the plastic base of softness, thereby might be applied in following flexible display panels.Oxide TFT is generally N type device, be difficult to be used to make complementary circuit as poly-Si TFT, but this problem can overcome by circuit design to a great extent.
Summary of the invention
The object of the present invention is to provide that a kind of preparation technology is simple, cost height and can be applied to the oxide thin film transistor semiconductor layer material of large-area substrates.Another purpose of the present invention provides a kind of with the thin-film transistor of this material as channel layer.
Oxide semiconductor material provided by the invention is a kind of indium zinc titanium oxide, promptly is mixed with In, the Zn oxide of Ti, and the Ti in this material, In, Zn directly combine with oxygen respectively, and material is rendered as amorphous state or polycrystalline attitude.
The electronegativity of Ti atom is 1.54 eV, is lower than the electronegativity of In and Zn atom, thereby easier and oxygen combination.In In, Zn oxide semiconductor, charge carrier forms by oxygen vacancy, mixes Ti and can effectively reduce oxygen vacancy in the material, reduces semi-conductive carrier concentration.TFT relies on the carrier concentration of modulation device semiconductor layer to come work, and the threshold value and the carrier concentration of device are directly related, therefore based on adding the threshold value positive change that Ti can make device among the TFT of In, Zn oxide semiconductor.Mix the lower Ti of electronegativity and also be equivalent in oxide material, introduce the stronger ionic bond of active force, can make semi-conducting material more stable.
In this In that is mixed with Ti, Zn oxide, In with respect to the mole percent level of In, Zn, Ti total amount between 5% to 98%, between 0.5% to 5%, determine according to the content of In, Ti by the content of Zn with respect to the mole percent level of In, Zn, Ti total amount for Ti.
In this oxide semiconductor, can also contain in I family, II family, III family, IV family, V group element or the lanthanide series one or more.This material can be prepared into film by physical vapour deposition (PVD) (Physical Vapor Deposition), chemical vapour deposition (CVD) (Chemical Vapor Deposition), ald (Atomic Layer Deposition) or solution methods etc.For example film can be mixed In, the Zn oxide ceramics target deposition of Ti by the pulsed electron beam evaporation, perhaps mixes In, the Zn oxide ceramics target deposition of Ti by magnetron sputtering, also can be by to being placed in the In in the same cavity
2O
3, ZnO and TiO
2Target carries out many target co-sputterings and deposits.
The present invention also is used for TFT with above-mentioned material.This TFT structure comprises: gate electrode, source electrode and drain electrode are used for the gate insulator of isolate gate electrode and source electrode, drain electrode, and are used to connect semiconductor layer source electrode and drain electrode, that made by above-mentioned material.Wherein, grid, source and drain electrode material can for but be not limited to titanium (Ti), platinum (Pt), ruthenium (Ru), gold (Au), silver (Ag), molybdenum (Mo), aluminium (Al), tungsten (W), copper (Cu) or conductive oxide, as IZO(In-Zn-O) or AZO(Al-Zn-O), the gate insulator layer material can for but be not limited to silica (SiO
2), silicon nitride (SiN
x), hafnium oxide (HfO
2), tantalum oxide (Ta
2O
5) or these mixtures of material, or organic material and organic/inorganic composite material.
Above-mentioned TFT device has general oxide TFT field equally, and to cause mobility higher, the simple advantage of preparation technology, and change the incorporation of Ti can effectively be regulated TFT under the situation that does not change other performances of TFT threshold value.Because oxide TFT can not make complementary circuit, the technology of a cover preparation dual threshold device can provide convenience for the design of TFT drive circuit.Remove outside the effect of regulating threshold value, the stability of TFT under voltage pressure is also improved because of mixing Ti.
Adopt the thin-film transistor of this semi-conducting material to can be used as switch or driving element is applied to all kinds of display devices, for example give out light display, Electronic Paper etc. of LCD, organic electroluminescence.
Description of drawings
Fig. 1 is that Ti content is to In
2Zn
2O
5The influence of film carrier concentration.
Fig. 2 is the In that mixes Ti, the TFT structure chart of Zn oxide for semiconductor layer.
Fig. 3 mixes the In of 2% Ti for semiconductor layer
2Zn
2O
5(a) and In
2Zn
4O
7(b) transfer characteristic curve of TFT device.The direction of curved scanning when the arrow among the figure is represented to test.
Fig. 4 is the In that mixes 2% Ti under the effect of grid bias pressure and do not mix Ti
2Zn
4O
7The time dependent comparison of TFT transfer characteristic.To two devices respectively 0 s, 10 s, 30 s, 100 s, 300 s, 600 s, 1000 s totally 7 time points test.
Embodiment
Below will provide the In that is mixed with Ti, the Zn oxide that the present invention relates to and reach embodiment based on the TFT of this semi-conducting material.
Fig. 1 has shown that Ti content is to In
2Zn
2O
5The influence of film carrier concentration.Wherein mix Ti In
2Zn
2O
5Film is to adopt the different targets of mixing the Ti amount to prepare under the same process condition, and base reservoir temperature is 170 ° of C during thin film deposition.The mole percent level of Ti is meant the molar percentage of Ti with respect to In, Zn, Ti total amount among the figure.Under low Ti content, Ti might be as the alms giver, and displacement In or Zn provide 1 to 2 electronics makes carrier concentration increase.After the content of Ti in film increased to 1%, its effect of forcing down carrier concentration just began to manifest.For reaching the purpose that reduces carrier concentration, need sufficiently high Ti content, concrete numerical value need be determined according to process conditions.
Fig. 2 is the TFT device architecture figure that the present invention relates to, and in this example, grid, source and drain electrode material are Al, and the gate insulator layer material is the Ta of dc reactive sputtering
2O
5, the In that mixes Ti that semiconductor layer obtains for the pulsed electron beam evaporation, Zn oxide.About 50 nm of semiconductor bed thickness at room temperature deposit, and the content of In, Zn, Ti is according to the cubage in the used ceramic target of evaporation in the rete.Explanation for example, embodiments of the invention have only provided bottom grating structure TFT as shown in Figure 2, however those skilled in the art should be easy to apply the present invention to other TFT structures, so should be as limit.
Fig. 3 is two semiconductor layers In of mixing 2% Ti, the transfer characteristic curve of Zn oxide TFT device, and drain bias is 1 V during test, and grid voltage is swept on the occasion of flyback again by negative value.Two device semiconductor layer In, Zn, Ti composition ratios are respectively 49:49:2 and 32.3:65.7:2.The on-off ratio of device is about 10
5, forward and reverse scan curve difference are little, and the stable performance of device is described.When the semiconductor layer composition is the In that mixes 2% Ti
2O
3The time, device does not show transistor characteristic, so semiconductor layer In composition on be limited to 98%.
Table 1 is to have different I n, Zn, Ti content than the TFT device performance of semiconductor layer relatively.Numerical value in the table is the mean value of four device properties on the same sample substrate.No matter the ratio of In and Zn is 1 or 1/2 as seen from the table, along with the threshold value of the increase device of Ti content all obviously to positive change, do not reduce because of In, Zn oxide semiconductor layer mix impurity and cause mobility, the subthreshold value amplitude of oscillation of device does not have obvious variation yet.
Table 1 has different I n, Zn, Ti content compares than the TFT device performance of semiconductor layer
| Semiconductor layer In, Zn, Ti content ratio | Device threshold (V) | The field causes mobility (cm 2/Vs） | The subthreshold value amplitude of oscillation (V/dec) |
| 50：50：0 | 1.2 | 3.13 | 0.38 |
| 49.5：49.5：1 | 4.3 | 4.78 | 0.41 |
| 48：48：2 | 5.1 | 6.34 | 0.47 |
| 33.3：66.7：0 | 1.5 | 5.03 | 0.52 |
| 32.3：65.7：2 | 5.6 | 5.76 | 0.89 |
Fig. 4 is the In that mixes Ti under the effect of grid bias pressure and do not mix Ti
2Zn
4O
7The comparison that the TFT transfer characteristic changes.The grid bias that is applied is 10 V, source-drain electrode ground connection when bias voltage applies.The bias voltage total duration is 1000 s, therebetween 0 s, 10 s, 30 s, 100 s, 300 s, 600 s, 1000 s totally 7 time points stop to apply the transfer characteristic curve of bias voltage and scanning device.Grid voltage when device threshold is defined as drain current 1 μ A, the device threshold of then not mixing Ti is changed to-3.4 V from 1.8 V after 1000 s bias pressure effects, be changed to 1.3 V and mix the Ti device threshold from 4.7 V, amplitude of variation is little 1.8 V illustrate and mix that the stability of device makes moderate progress behind the Ti.
From above embodiment as seen, the In that mixes Ti proposed by the invention, Zn oxide are during as the semiconductor layer of TFT, prepared device has general oxide TFT field equally, and to cause mobility higher, the simple advantage of preparation technology, and the incorporation that changes Ti can effectively be regulated TFT under the situation that does not change other performances of TFT threshold value, the stability of TFT under voltage pressure is also improved because of mixing Ti.This class TFT has good application prospects as switch or driving element in the flat panel display field.
Claims (5)
1. a semiconductor layer oxide material that is used for thin-film transistor is characterized in that for containing zinc, indium and titanyl compound material; In described oxide material, In with respect to the mole percent level of In, Zn, Ti total amount between 5% to 98%, Ti with respect to the mole percent level of In, Zn, Ti total amount between 0.5% to 5%.
2. oxide material according to claim 1 is characterized in that also containing in the oxide material in I family, II family, III family, IV family, V group element or the lanthanide series one or more.
3. oxide material according to claim 1 and 2 is characterized in that oxide material is in amorphous state or polycrystalline attitude.
4. oxide thin film transistor, it is characterized in that being constructed as follows of this oxide thin film transistor: comprise gate electrode, source electrode and drain electrode, be used for the gate insulator of isolate gate electrode and source electrode, drain electrode, and be used to connect source electrode and drain electrode, as the described oxide semiconductor material layer of one of claim 1-3.
5. oxide thin film transistor according to claim 4, it is characterized in that described grid, source and drain electrode material are titanium, platinum, ruthenium, gold, silver, molybdenum, aluminium, tungsten, copper or conductive oxide, the gate insulator layer material is silica, silicon nitride, hafnium oxide, tantalum oxide or these mixtures of material, or organic material and organic/inorganic composite material.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103022151A (en) * | 2012-12-25 | 2013-04-03 | 青岛盛嘉信息科技有限公司 | Thin film transistor |
| CN103050441A (en) * | 2012-12-10 | 2013-04-17 | 华映视讯（吴江）有限公司 | Oxide thin film transistor preparation method |
| CN108352410A (en) * | 2015-11-25 | 2018-07-31 | 株式会社爱发科 | Thin film transistor (TFT), oxide semiconductor film and sputtering target material |
| CN109716532A (en) * | 2016-10-21 | 2019-05-03 | 株式会社V技术 | Oxide semiconductor devices and its manufacturing method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101339954A (en) * | 2007-07-04 | 2009-01-07 | 三星电子株式会社 | Oxide semiconductor, thin film transistor including the same and method of manufacturing a thin film transistor |
-
2011
- 2011-03-17 CN CN 201110064561 patent/CN102163625A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101339954A (en) * | 2007-07-04 | 2009-01-07 | 三星电子株式会社 | Oxide semiconductor, thin film transistor including the same and method of manufacturing a thin film transistor |
Non-Patent Citations (1)
| Title |
|---|
| 《液晶与显示》 20100831 姚绮君等 基于In-Zn-Ti-O氧化物半导体材料的薄膜晶体管 569-571 1－5 第25卷, 第4期 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103050441A (en) * | 2012-12-10 | 2013-04-17 | 华映视讯（吴江）有限公司 | Oxide thin film transistor preparation method |
| CN103022151A (en) * | 2012-12-25 | 2013-04-03 | 青岛盛嘉信息科技有限公司 | Thin film transistor |
| CN108352410A (en) * | 2015-11-25 | 2018-07-31 | 株式会社爱发科 | Thin film transistor (TFT), oxide semiconductor film and sputtering target material |
| CN108352410B (en) * | 2015-11-25 | 2021-06-29 | 株式会社爱发科 | Thin film transistor, oxide semiconductor film, and sputtering target |
| CN109716532A (en) * | 2016-10-21 | 2019-05-03 | 株式会社V技术 | Oxide semiconductor devices and its manufacturing method |
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Application publication date: 20110824 |