CN102162135A - Preparation method of ZnS/Si nuclear-shell nanowires or nanobelts and polycrystal Si tubes - Google Patents
Preparation method of ZnS/Si nuclear-shell nanowires or nanobelts and polycrystal Si tubes Download PDFInfo
- Publication number
- CN102162135A CN102162135A CN 201110056662 CN201110056662A CN102162135A CN 102162135 A CN102162135 A CN 102162135A CN 201110056662 CN201110056662 CN 201110056662 CN 201110056662 A CN201110056662 A CN 201110056662A CN 102162135 A CN102162135 A CN 102162135A
- Authority
- CN
- China
- Prior art keywords
- zns
- nano
- core
- preparation
- line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention discloses a preparation method of ZnS/Si nuclear-shell nanowires or nanobelts and polycrystal Si tubes. The preparation method comprises the following steps: carrying out two-step thermal evaporation in a vacuum tubular furnace, synthesizing the ZnS/Si nuclear-shell nanowires or nanobelts with different diameters by taking ZnS with different shapes as templates and controlling the growth time of Si, and processing with diluted hydrochloric acid to obtain the polycrystal Si tubes with multiple shapes and different diameters. The preparation method is simple to operate, has good controllability, and is suitable to large-scale production of the ZnS/Si nuclear-shell nanowires or nanobelts and polycrystal Si tubes, with multiple shapes and the different diameters. A one-dimensional nano material obtained with the method in the invention has a wide application prospect in the aspects of silicon-substrate integrated circuits, nano optical devices, nano sensors and the like.
Description
Technical field
The present invention relates to a kind of ZnS/Si core-shell nano line or nano belt and polycrystalline Si tube preparation method, be specifically related to ZnS/Si core-shell nano line or the nano belt and the polycrystalline Si tube preparation method of a kind of pattern and controllable diameter.The controlledly synthesis field that belongs to Si base semiconductor nano material.
Background technology
Because silicon is a kind of important semiconductor material, and one-dimensional nano heterogeneous knot has excellent photoelectric properties, makes silica-based one-dimensional nano heterogeneous knot have huge application potential on semiconducter device.Silica-based 1-dimention nano heterojunction semiconductor can utilize several different methods preparation, for example chemical Vapor deposition process, pulsed laser deposition and solution growth method etc. at present.Though above method can be prepared Si/Ge, Si/SiGe, Si/SiO
2, heterojunction such as Si/Sn, but the pattern and the diameter of the silicon-based semiconductor nano material that very difficult control generates.Because the performance of nano material depends on its structure, pattern, size and chemical composition, therefore the preparation method of nano material that can control diameter, pattern and chemical composition will be in nanometer electricity, and there is more wide application prospect in fields such as nanocomposite optical and nano-sensor.
Summary of the invention
First technical problem that the present invention will solve provides the preparation method of a kind of ZnS/Si core-shell nano line or nano belt.This method utilizes ZnS as template, adopts simple two step thermal evaporations, by the ZnS template of selecting different-shape for use and the depositing time of controlling Si, prepares the Zn/Si nucleocapsid structure monodimension nanometer material of multiple pattern and different diameter.
Second technical problem that the present invention will solve provides a kind of preparation method of polycrystalline Si pipe.This method is utilized the multiple pattern of the method for the invention preparation and the Zn/Si core-shell nano line or the nano belt of different diameter, handles through dilute hydrochloric acid, obtains the polycrystalline Si pipe of multiple pattern and different diameter.
For solving above-mentioned first technical problem, technical scheme provided by the present invention is:
The preparation method of a kind of ZnS/Si core-shell nano line or nano belt, this method comprises the steps:
A. the preparation of different-shape ZnS template
1) alumina tube is installed in the vacuum tube furnace as heating chamber, place the alumina tube middle part as evaporation source in the ZnS powder, golden substrate is covered on one or more surfaces, for example covered the substrate of 5 nano-Au films, be placed on the downstream of air flow line in the pipe, the purity of described ZnS powder preferably is not less than 99.90%;
2) sealing total system with forvacuum in the alumina tube, feeds and is mixed with 5% H
2High-purity argon gas, speed is 25 ~ 50 cubic centimetres of per minutes, and the pressure in the holding tube is 1 * 10
4Pa ~ 4 * 10
4Pa is heated to 1000 ℃ ~ 1100 ℃ with ZnS powder position, alumina tube middle part with the speed of 10 ℃ ~ 50 ℃ of per minutes, and this moment, described area had 900 ℃ to 400 ℃ thermograde along air flow line, kept this thermograde 1 ~ 5 hour; Described forvacuum is that intraductal pressure is controlled to be less than 1 * 10
-1Pa is preferably less than 6 * 10
-2Pa;
3) stop heating, alumina tube is cooled to room temperature, on the substrate of low-temperature region, forms the ZnS nano wire, on the substrate of high-temperature area, form the ZnS nano belt, the temperature of wherein said low-temperature region is 400 ℃ ~ 550 ℃, and the temperature of described high-temperature area is 750 ℃ ~ 900 ℃; Preferably, the temperature of described low-temperature region is 450 ℃ ~ 520 ℃, and the temperature of described high-temperature area is 780 ℃ ~ 850 ℃; More preferably, the temperature of described low-temperature region is 500 ℃, and the temperature of described high-temperature area is 800 ℃;
B. the preparation of ZnS/Si core-shell nano line or nano belt
4) with the SiO powder as for alumina tube middle part, the substrate that is loaded with ZnS nano wire or ZnS nano belt that obtains in the step 3) is placed on the downstream of air flow line in the pipe;
5) will manage interior forvacuum, and feed and be mixed with 5%H
2High-purity argon gas, speed is 25 ~ 50 cubic centimetres of per minutes, and the pressure in the holding tube is 1 * 10
4Pa ~ 4 * 10
4Pa, SiO powder position, alumina tube middle part is heated to 1250 ℃ ~ 1350 ℃ with the speed of 10 ℃ ~ 50 ℃ of per minutes, this moment, described area had 900 ℃ to 600 ℃ thermograde along air flow line, kept this thermograde 0.5 ~ 4 hour, and Si was deposited on forms ZnS/Si core-shell nano line or nano belt on the ZnS template; Described forvacuum is that intraductal pressure is controlled to be less than 1 * 10
-1Pa is preferably less than 6 * 10
-2Pa;
The present invention can be by keeping the time of said temperature gradient, control the depositing time of Si so that control generates the diameter of ZnS/Si core-shell nano line or the thickness of ZnS/Si core-shell nano band, in described step 5), when keeping 900 ℃ to 600 ℃ thermograde in the time of 30 minutes, the diameter of described ZnS/Si core-shell nano line is 180 ~ 220nm, and the thickness of ZnS/Si core-shell nano band is 180 ~ 220nm; When the thermograde of keeping 900 ℃ to 600 ℃ was 60 minutes, the diameter of described ZnS/Si core-shell nano line was 480 ~ 520nm, and the thickness of ZnS/Si core-shell nano band is 480 ~ 520nm; When the thermograde of keeping 900 ℃ to 600 ℃ was 90 minutes, the diameter of described ZnS/Si core-shell nano line was 680 ~ 720nm, and the thickness of ZnS/Si core-shell nano band is 680 ~ 720nm; When the thermograde of keeping 900 ℃ to 600 ℃ was 120 minutes, the diameter of described ZnS/Si core-shell nano line was 880 ~ 920nm, and the thickness of ZnS/Si core-shell nano band is 880 ~ 920nm.
6) stop heating, alumina tube is cooled to room temperature, obtain ZnS/Si core-shell nano line or the nano belt identical with ZnS nano wire or nano belt pattern.
Further, described substrate can be silicon chip, ceramic plate, quartz plate or sapphire sheet.
For solving above-mentioned second technical problem, technical scheme provided by the present invention is:
A kind of preparation method of polycrystalline Si pipe, this method are that the substrate that is loaded with ZnS/Si core-shell nano line or nano belt with method for preparing of the present invention is placed in the hydrochloric acid soln that concentration is 10%-35% and soaks 30min, obtain the polycrystalline Si pipe.The silicone tube of two kinds of patterns that the method for the invention prepares, its pattern difference, performance are also different.
The invention has the beneficial effects as follows:
1. people's control is the diameter of controlling nano wire by control catalyst particulate size in the present prior art, still, for the catalyzer grown nano wire, increases growth time, can not increase the diameter of nano wire.
2. select for use the various ZnS of pattern as template, thereby can prepare various ZnS/Si nucleocapsid structure monodimension nanometer material of pattern and polycrystalline silicone tube.The nucleocapsid structure monodimension nanometer material and the silicone tube of multiple pattern, also nobody reported that pattern determined the performance of material in a way at present.
3. the invention provides the ZnS/Si nucleocapsid structure monodimension nanometer material and the polycrystalline Si tube preparation method of pattern and controllable diameter.This method is simple to operate, controllability good, cost is lower, is suitable for the Zn/Si nucleocapsid structure monodimension nanometer material and the polycrystalline Si pipe of the multiple pattern of scale operation, different diameter.
Description of drawings
Fig. 1 is low power scanning electron microscope (SEM) image of ZnS/Si nuclear/shell nano wire (illustration is a high power SEM image) a); B) (illustration is its corresponding selected area electron diffraction image to low power transmission electron microscope (TEM) image of ZnS/Si nuclear/shell nano wire; C) high-resolution-ration transmission electric-lens (HRTEM) image of examining for ZnS; D) the HRTEM image of polycrystalline Si shell;
Fig. 2 is the TEM image of the ZnS/Si nuclear/shell nano wire of template with the ZnS nano wire a); B) sample in a) is handled the TEM image of the silicone tube that obtains with dilute hydrochloric acid; C) with the ZnS nano belt be the TEM image of the ZnS/Si nuclear/shell nano belt of template; D) with c) in sample handle the TEM image of the silicone tube obtain with dilute hydrochloric acid;
ZnS/Si nuclear/shell the nano wire of Fig. 3 different diameter is about 200nm a); B) about 500nm; C) about 700nm; D) about 900nm.
Embodiment
Embodiment 1
(1) preparation ZnS template
At first, alumina tube is installed in the vacuum tube furnace as heating chamber, places the alumina tube middle part as evaporation source in 2g ZnS powder (Alfa Aldrich, 99.99%), with evaporation the silicon chip of 5 nano-Au films be placed on the downstream of air flow line in the pipe.
Secondly, the sealing total system is evacuated to 6 * 10 with intraductal pressure
-2Pa feeds and is mixed with 5% H
2High-purity Ar gas, speed is 25 cubic centimetres of per minutes, and the pressure in the holding tube is 4 * 10
4Pa.Being ZnS powder position with pipe middle part is heated to 1050 ℃ with the speed of 20 ℃ of per minutes, and this moment, described area had 900 ℃ to 400 ℃ thermograde along air flow line, kept this thermograde about 4 hours.
At last, stopping heating, pipe is cooled to room temperature, is that the zone generates the ZnS nano wire about 500 ℃ at silicon temperature, is that the zone generates the ZnS nano belt about 800 ℃ at silicon temperature.
(2) preparation ZnS/Si nuclear/shell nano wire
At first, SiO powder (Alfa Aldrich, 99.99%) as for the alumina tube middle part, is placed on the silicon chip that is loaded with the ZnS nano wire in the downstream of air flow line in the pipe.Intraductal pressure is evacuated to 6 * 10
-2Pa feeds and is mixed with 5% H
2High-purity Ar gas, speed is 25 cubic centimetres of per minutes, and the pressure in the holding tube is 4 * 10
4Pa.
Secondly, being SiO powder position with pipe middle part is heated to 1350 ℃ with the speed of 20 ℃ of per minutes, this moment, described area of silicon wafer had 900 ℃ to 600 ℃ thermograde along air flow line, keep this thermograde respectively in the time of 30,60,90,120 minutes, can obtain the ZnS/Si nuclear/shell nano wire of diameter for about 200n m, about 500nm, about 700nm, about 900nm.
At last, stop heating, pipe is cooled to room temperature, this moment, the ZnS nano wire changed the ZnS/Si nuclear/shell nano wire identical with its pattern into.
(3) preparation polycrystalline Si pipe
Is to soak half an hour in 10% hydrochloric acid with the above-mentioned ZnS/Si nuclear/shell nano wire that makes in concentration, has obtained the polycrystalline silicone tube.
(1) preparation ZnS template
At first, alumina tube is installed in the vacuum tube furnace as heating chamber, places the alumina tube middle part as evaporation source in 2g ZnS powder (Alfa Aldrich, 99.99%), with evaporation the silicon chip of 5 nano-Au films be placed on the downstream of air flow line in the pipe.
Secondly, the sealing total system is evacuated to 6 * 10 with intraductal pressure
-2Pa feeds and is mixed with 5% H
2High-purity Ar gas, speed is 50 cubic centimetres of per minutes, and the pressure in the holding tube is 1 * 10
4Pa.Being ZnS powder position with pipe middle part is heated to 1100 ℃ with the speed of 50 ℃ of per minutes, and this moment, described area had 900 ℃ to 400 ℃ thermograde along air flow line, kept this thermograde about 2 hours.
At last, stopping heating, pipe is cooled to room temperature, is that the zone generates the ZnS nano wire about 500 ℃ at silicon temperature, is that the zone generates the ZnS nano belt about 800 ℃ at silicon temperature.
(2) preparation ZnS/Si nuclear/shell nano belt
At first, the SiO powder as for the alumina tube middle part, is placed on the silicon chip that is loaded with the ZnS nano belt in the downstream of air flow line in the pipe.Intraductal pressure is evacuated to 6 * 10
-2Pa feeds and is mixed with 5% H
2High-purity Ar gas, speed is 25 cubic centimetres of per minutes, and the pressure in the holding tube is 1 * 10
4Pa.
Secondly, being SiO powder position with pipe middle part is heated to 1250 ℃ with the speed of 20 ℃ of per minutes, this moment, described area of silicon wafer had 900 ℃ to 600 ℃ thermograde along air flow line, keep this thermograde respectively in the time of 30,60,90,120 minutes, can obtain the ZnS/Si nuclear/shell nano belt of thickness for about 200nm, about 500nm, about 700nm, about 900nm.
At last, stop heating, pipe is cooled to room temperature, this moment, the ZnS nano belt changed the ZnS/Si nuclear/shell nano belt identical with its pattern into.
(3) preparation polycrystalline Si pipe
Is to soak half an hour in 35% hydrochloric acid with the above-mentioned ZnS/Si nuclear/shell nano belt that makes in concentration, has obtained the polycrystalline silicone tube.
Obviously, the above embodiment of the present invention only is for example of the present invention clearly is described, and is not to be qualification to embodiments of the present invention.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here can't give exhaustive to all embodiments.Everyly belong to the row that conspicuous variation that technical scheme of the present invention extends out or change still are in protection scope of the present invention.
Claims (10)
1. the preparation method of ZnS/Si core-shell nano line or nano belt is characterized in that this method comprises the steps:
A. the preparation of different-shape ZnS template
1) alumina tube is installed in the vacuum tube furnace as heating chamber, places the alumina tube middle part as evaporation source in the ZnS powder, the downstream that golden substrate is placed on air flow line in the pipe is covered on one or more surfaces;
2) sealing total system with forvacuum in the alumina tube, feeds and is mixed with 5% H
2High-purity argon gas, speed is 25 ~ 50 cubic centimetres of per minutes, and the pressure in the holding tube is 1 * 10
4Pa ~ 4 * 10
4Pa is heated to 1000 ℃ ~ 1100 ℃ with ZnS powder position, alumina tube middle part with the speed of 10 ℃ ~ 50 ℃ of per minutes, and this moment, described area had 900 ℃ to 400 ℃ thermograde along air flow line, kept this thermograde 1 ~ 5 hour;
3) stop heating, alumina tube is cooled to room temperature, on the substrate of low-temperature region, forms the ZnS nano wire, on the substrate of high-temperature area, form the ZnS nano belt, the temperature of wherein said low-temperature region is 400 ℃ ~ 550 ℃, and the temperature of described high-temperature area is 750 ℃ ~ 900 ℃;
B. the preparation of ZnS/Si core-shell nano line or nano belt
4) with the SiO powder as for alumina tube middle part, the substrate that is loaded with ZnS nano wire or ZnS nano belt that obtains in the step 3) is placed on the downstream of air flow line in the pipe;
5) will manage interior forvacuum, and feed and be mixed with 5% H
2High-purity argon gas, speed is 25 ~ 50 cubic centimetres of per minutes, and the pressure in the holding tube is 1 * 10
4Pa ~ 4 * 10
4Pa, SiO powder position, alumina tube middle part is heated to 1250 ℃ ~ 1350 ℃ with the speed of 10 ℃ ~ 50 ℃ of per minutes, this moment, described area had 900 ℃ to 600 ℃ thermograde along air flow line, kept this thermograde 0.5 ~ 4 hour, and Si was deposited on forms ZnS/Si core-shell nano line or nano belt on the ZnS template;
6) stop heating, alumina tube is cooled to room temperature, obtain ZnS/Si core-shell nano line or the nano belt identical with ZnS nano wire or nano belt pattern.
2. according to the preparation method of claim 1 described ZnS/Si core-shell nano line or nano belt, it is characterized in that in the described step 1), the purity of described ZnS powder is not less than 99.90%.
3. according to the preparation method of claim 1 or 2 described ZnS/Si core-shell nano lines or nano belt, it is characterized in that in the described step 3), the temperature of described low-temperature region is 450 ℃ ~ 520 ℃, the temperature of described high-temperature area is 780 ℃ ~ 850 ℃.
4. according to the preparation method of claim 3 described ZnS/Si core-shell nano line or nano belt, it is characterized in that in the described step 3), the temperature of described low-temperature region is 500 ℃, the temperature of described high-temperature area is 800 ℃.
5. according to the preparation method of claim 3 described ZnS/Si core-shell nano line or nano belt, it is characterized in that described substrate is silicon chip, ceramic plate, quartz plate or sapphire sheet.
6. according to the preparation method of claim 3 described ZnS/Si core-shell nano line or nano belt, it is characterized in that, in the described step 5), the thermograde of keeping 900 ℃ to 600 ℃ is in the time of 30 minutes, the diameter of described ZnS/Si core-shell nano line is 180 ~ 220nm, and the thickness of ZnS/Si core-shell nano band is 180 ~ 220nm.
7. according to the preparation method of claim 3 described ZnS/Si core-shell nano line or nano belt, it is characterized in that, in the described step 5), when keeping 900 ℃ to 600 ℃ thermograde and being 60 minutes, the diameter of described ZnS/Si core-shell nano line is 480 ~ 520nm, and the thickness of ZnS/Si core-shell nano band is 480 ~ 520nm.
8. according to the preparation method of claim 3 described ZnS/Si core-shell nano line or nano belt, it is characterized in that, in the described step 5), when keeping 900 ℃ to 600 ℃ thermograde and being 90 minutes, the diameter of described ZnS/Si core-shell nano line is 680 ~ 720nm, and the thickness of ZnS/Si core-shell nano band is 680 ~ 720nm.
9. according to the preparation method of claim 3 described ZnS/Si core-shell nano line or nano belt, it is characterized in that, in the described step 5), when keeping 900 ℃ to 600 ℃ thermograde and being 120 minutes, the diameter of described ZnS/Si core-shell nano line is 880 ~ 920nm, and the thickness of ZnS/Si core-shell nano band is 880 ~ 920nm.
10. the preparation method of a polycrystalline Si pipe is characterized in that, this method be the substrate with each the described ZnS/Si of being loaded with core-shell nano line of claim 1 ~ 9 or nano belt to be placed on concentration be to soak 30min in 10% ~ 35% the hydrochloric acid soln, obtain the polycrystalline Si pipe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110056662 CN102162135A (en) | 2011-03-09 | 2011-03-09 | Preparation method of ZnS/Si nuclear-shell nanowires or nanobelts and polycrystal Si tubes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110056662 CN102162135A (en) | 2011-03-09 | 2011-03-09 | Preparation method of ZnS/Si nuclear-shell nanowires or nanobelts and polycrystal Si tubes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102162135A true CN102162135A (en) | 2011-08-24 |
Family
ID=44463578
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201110056662 Pending CN102162135A (en) | 2011-03-09 | 2011-03-09 | Preparation method of ZnS/Si nuclear-shell nanowires or nanobelts and polycrystal Si tubes |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102162135A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102583456A (en) * | 2012-03-03 | 2012-07-18 | 天津理工大学 | DC (direct-current)-plasma-jet CVD (chemical vapor deposition) method for preparing magnesia nanobelts |
| CN107431133A (en) * | 2015-01-26 | 2017-12-01 | 德山金属株式会社 | Core-shell nano line, the synthetic method of core-shell nano line include the transparency electrode and Organic Light Emitting Diode of core-shell nano line |
| CN109950338A (en) * | 2019-03-25 | 2019-06-28 | 皖西学院 | A kind of Si2Te3/Si2Te3@Si nanowire heterojunction and preparation method thereof |
-
2011
- 2011-03-09 CN CN 201110056662 patent/CN102162135A/en active Pending
Non-Patent Citations (4)
| Title |
|---|
| 《Adv.Mater.》 20030205 Yang Jiang等 Hydrogen-Assisted Thermal Evaporation Synthesis of ZnS Nanoribbons on a Large Scale 323-327 第15卷, 第3期 * |
| 《Angew.Chem.Int.Ed.》 20041231 Junqing Hu等 Synthesis of Crystalline Silicon Tubular Nanostructures with ZnS Nanowires as Removable Templates 63-66 第43卷, * |
| 《CrystEngComm》 20110216 Junsheng Cai等 Growth,structural and vibrating properties of CdSe-Ge,CdSe-Ge-CdSe,CdSe-Ge/Ge,Ge-GeSe heterostructure nanowires and GeSe nanobelts 2734-2741 第13卷, * |
| 《Journal of Crystal Growth》 20071012 Z.H.Chen等 Epitaxial ZnS/Si core-shell nanowires and single-crystal silicon tube field-effect transistors 165-170 第310卷, * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102583456A (en) * | 2012-03-03 | 2012-07-18 | 天津理工大学 | DC (direct-current)-plasma-jet CVD (chemical vapor deposition) method for preparing magnesia nanobelts |
| CN107431133A (en) * | 2015-01-26 | 2017-12-01 | 德山金属株式会社 | Core-shell nano line, the synthetic method of core-shell nano line include the transparency electrode and Organic Light Emitting Diode of core-shell nano line |
| CN107431133B (en) * | 2015-01-26 | 2020-10-27 | 德山金属株式会社 | Core-shell nanowire, method for synthesizing core-shell nanowire, transparent electrode including core-shell nanowire, and organic light emitting diode |
| CN109950338A (en) * | 2019-03-25 | 2019-06-28 | 皖西学院 | A kind of Si2Te3/Si2Te3@Si nanowire heterojunction and preparation method thereof |
| CN109950338B (en) * | 2019-03-25 | 2020-09-15 | 皖西学院 | Si2Te3/Si2Te3@ Si nanowire heterojunction and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101550531B (en) | Method for preparing silicon nano structures | |
| CN100375235C (en) | Growth controlling method for preparation of silicon dioxide or silicon nanowire in large area | |
| CN103882514A (en) | Semiconductor CdS/CdSSe heterojunction nanowire and preparation method thereof | |
| CN102040187B (en) | Method for growing core-shell structure ZnO nanowire array | |
| CN112875742A (en) | Gallium oxide nanotube and preparation method and application thereof | |
| CN110676339A (en) | Gallium oxide nanocrystalline film solar blind ultraviolet detector and preparation method thereof | |
| CN104418380B (en) | A kind of zinc oxide nano-wire array structure and preparation method thereof | |
| CN104762608B (en) | A kind of preparation method of the controllable horizontal CdS nano-wire arrays of the direction of growth | |
| CN102618849A (en) | Method for preparing one-dimensional ZnO/SnO2 core/shell structure nano heterojunction semiconductor material | |
| CN108511324B (en) | Epitaxial growth method of gamma-phase indium selenide nanosheets | |
| CN103531447A (en) | Method for reducing defect density of gallium nitride nanowire array crystal | |
| CN102260907B (en) | Preparation method of ZnO nano homogeneous p-n junction array | |
| CN109207957A (en) | A kind of MoS2/MoO2The preparation method of hetero-junctions | |
| CN103160929B (en) | The preparation method of a kind of monocrystal AIN nano cone and nanometer sheet | |
| CN102162135A (en) | Preparation method of ZnS/Si nuclear-shell nanowires or nanobelts and polycrystal Si tubes | |
| CN103864460A (en) | Preparation method of sequenced tungsten oxide nanowire array structure | |
| CN104402039B (en) | A kind of method preparing three-dimensional ZnO nano gauze | |
| CN105314608B (en) | A kind of ZnSe GaP solid solution nano materials and preparation method thereof | |
| JP4922336B2 (en) | Method for producing iron silicide nanowire | |
| CN104695020B (en) | A kind of strip InAs nano belt and its preparation and application | |
| CN101851781B (en) | Method for preparing AlN mono-crystal nanobelts and nano-branch structure | |
| CN101311371B (en) | Process for preparing SnO2-ZnO heterogenous nano-wire | |
| CN108147418B (en) | SiO in parallel arrangement2Nanowire and method for preparing same | |
| CN113279058B (en) | Controllable preparation method of low-symmetry layered material Te | |
| CN101476103B (en) | Method for preparing organic semiconductor material rubrene micro-nano wire |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20110824 |